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Journal articles on the topic 'Ion-Beam-Assisted Deposition'

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Published: 4 June 2021
Last updated: 9 February 2022

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1

Nielsen, B. R. "Ion Beam Assisted Deposition." Europhysics News 25, no. 7 (1994): 149–50. http://dx.doi.org/10.1051/epn/19942507149.

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2

Rossnagel, S. M., and J. J. Cuomo. "Ion-Beam-Assisted Deposition and Synthesis." MRS Bulletin 12, no. 2 (March 1987): 40–51. http://dx.doi.org/10.1557/s0883769400068391.

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Concurrent energetic particle bombardment during film deposition can strongly modify the structural and chemical properties of the resulting thin film. The interest in this technique, ion-assisted deposition, comes about because it can be used to produce thin films with properties not achievable by conventional deposition. Bombardment by low energy ions occurs during almost all plasma-based thin film deposition techniques. Bombardment of a growing film, particularly by accelerated ions, can also be combined with non-plasma-based deposition techniques, such as evaporation, to simulate some of the effects observed with sputtering. The bombarding particle flux is usually controllable so that the arrival rate, energy, and species can be independently varied from the depositing flux. Thus, a basic aspect of ion-beam-based deposition techniques is the “control” often absent in plasma-based techniques. In plasmas, the voltage, current, and pressure are all interdependent. The energetic bombardment at the substrate-film interface depends on the various properties of the plasma, as does the deposition rate. It is often difficult, or even impossible, to decouple these processes. With ion-beam-based deposition techniques, the ion bombardment is essentially independent of the deposition process, and both can be more easily controlled.The incident energetic particle contributes some of its energy or momentum to irreversibly change the dynamics of the film surface. The incident particle may also be incorporated into the growing film, changing the film's chemical nature. The changes induced by particle bombardment during deposition are often not characteristic of equilibrium thermodynamics because the incident particle's energy is often many times the local adsorption or binding energy.
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3

Iwase, Mitsuo, Susumu Masaki, and Hiroshi Morisaki. "Ion-beam-assisted thin film deposition." Journal of Advanced Science 2, no. 4 (1990): 218–25. http://dx.doi.org/10.2978/jsas.2.4_218.

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4

Gamo, Kenji. "Ion beam assisted etching and deposition." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 8, no. 6 (November 1990): 1927. http://dx.doi.org/10.1116/1.584876.

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5

Wolf, G. K., K. Zucholi, M. Barth, and W. Ensinger. "Equipment for ion beam assisted deposition." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 21, no. 1-4 (January 1987): 570–73. http://dx.doi.org/10.1016/0168-583x(87)90906-2.

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6

Hirvonen, James K. "Ion beam assisted thin film deposition." Materials Science Reports 6, no. 6 (July 1991): 215–74. http://dx.doi.org/10.1016/0920-2307(91)90008-b.

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7

Colligon, J. S. "Applications of ion-beam-assisted deposition." Materials Science and Engineering: A 139 (July 1991): 199–206. http://dx.doi.org/10.1016/0921-5093(91)90617-v.

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8

Kim, Sung Jin, Kyoon Choi, and Se Young Choi. "Preparation and Characterization of ITO Thin Films Deposition by Ion Beam Assisted Deposition." Korean Journal of Metals and Materials 52, no. 6 (June 5, 2014): 475–84. http://dx.doi.org/10.3365/kjmm.2014.52.6.475.

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9

Miralami, Raheleh, John G. Sharp, Fereydoon Namavar, Curtis W. Hartman, Kevin L. Garvin, and Geoffrey M. Thiele. "Effects of nano-engineered surfaces on osteoblast adhesion, growth, differentiation, and apoptosis." Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanomaterials, Nanoengineering and Nanosystems 234, no. 1-2 (December 3, 2019): 59–66. http://dx.doi.org/10.1177/2397791419886778.

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Modifying implant surfaces to improve their biocompatibility by enhancing osteoblast activation, growth, differentiation, and induction of greater bone formation with stronger attachments should result in improved outcomes for total joint replacement surgeries. This study tested the hypothesis that nano-structured surfaces, produced by the ion beam-assisted deposition method, enhance osteoblast adhesion, growth, differentiation, bone formation, and maturation. The ion beam-assisted deposition technique was employed to deposit zirconium oxide films on glass substrates. The effects of the ion beam-assisted deposition technique on cellular functions were investigated by comparing adhesion, proliferation, differentiation, and apoptosis of the human osteosarcoma cell line SAOS-2 on coated versus uncoated surfaces. Ion beam-assisted deposition nano-coatings enhanced initial cell adhesion assessed by the number of 4′,6-diamidino-2-phenylindole–stained nuclei on zirconium oxide nano-coated surfaces compared to glass surfaces. This nano-modification also increased cell proliferation as measured by mitochondrial dehydrogenase activity. Moreover, the ion beam-assisted deposition technique improved cell differentiation as determined by the formation of mineralized bone nodules and by the rate of calcium deposition, both of which are in vitro indicators of the successful bone formation. However, programmed cell death assessed by Annexin V staining and flow cytometry was not statistically significantly different between nano-surfaces and glass surfaces. Overall, the results indicate that nano-crystalline zirconium oxide surfaces produced by the ion beam-assisted deposition technique are superior to uncoated surfaces in supporting bone cell adhesion, proliferation, and differentiation. Thus, surface properties altered by the ion beam-assisted deposition technique enhanced bone formation and may increase the biocompatibility of bone cell–associated surfaces.
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10

Chakaroun, M., R. Antony, P. Taillepierre, and A. Moliton. "Lifetime obtained by ion beam assisted deposition." Materials Science and Engineering: C 27, no. 5-8 (September 2007): 1043–45. http://dx.doi.org/10.1016/j.msec.2006.06.015.

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11

Miyake, Shoji. "Surface modification by Ion Beam Assisted Deposition." Materia Japan 36, no. 8 (1997): 771–74. http://dx.doi.org/10.2320/materia.36.771.

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12

Jin, Ning, Lu Yusun, Zhai Houming, Feng Yudong, and Wang Yi. "Ion-beam-assisted deposition of CNx films." Surface and Coatings Technology 145, no. 1-3 (August 2001): 71–74. http://dx.doi.org/10.1016/s0257-8972(01)01266-x.

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13

Sharma, N., S. M. Casey, G. A. Jones, and P. J. Grundy. "Ion beam assisted deposition of CoPt films." Journal of Magnetism and Magnetic Materials 193, no. 1-3 (March 1999): 93–96. http://dx.doi.org/10.1016/s0304-8853(98)00495-8.

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14

Qu, B. D., W. L. Zhong, K. M. Wang, P. L. Zhang, Z. L. Wang, and W. Z. Li. "Ion‐beam‐assisted deposition of ferroelectric PbTiO3films." Journal of Applied Physics 74, no. 4 (August 15, 1993): 2896–99. http://dx.doi.org/10.1063/1.354644.

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15

Ensinger, W., M. Barth, H. Martin, A. Schröer, B. Enders, R. Emmerich, and G. K. Wolf. "Ion beam assisted deposition with a duoplasmatrona)." Review of Scientific Instruments 63, no. 5 (May 1992): 3058–62. http://dx.doi.org/10.1063/1.1142606.

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16

Puckett, Reese, Lawrence Stelmack, Stephen Michel, Michael J. O'Connell, and Paul Natishan. "Oxygen ion beam assisted thin film deposition." Surface and Coatings Technology 41, no. 3 (June 1990): 259–67. http://dx.doi.org/10.1016/0257-8972(90)90137-2.

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17

Wolf, G. K., M. Barth, and W. Ensinger. "Ion beam assisted deposition for metal finishing." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 37-38 (February 1989): 682–87. http://dx.doi.org/10.1016/0168-583x(89)90274-7.

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18

Hubler, G. K., C. A. Carosella, E. P. Donovan, D. Vanvechten, R. H. Bassel, T. D. Andreadis, M. Rosen, and G. P. Mueller. "Physical aspects of ion beam assisted deposition." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 46, no. 1-4 (February 1990): 384–91. http://dx.doi.org/10.1016/0168-583x(90)90734-c.

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19

Wolf, G. K. "Ion beam assisted deposition of insulating layers." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 65, no. 1-4 (March 1992): IN3–114. http://dx.doi.org/10.1016/0168-583x(92)95022-j.

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20

Liu, Xianghong, and Tengcai Ma. "Effects of electron beam during ion implantation and ion beam assisted deposition." Applied Physics Letters 63, no. 14 (October 4, 1993): 1901–2. http://dx.doi.org/10.1063/1.110642.

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21

Li, Xue Lei, Yu Dong Feng, and Hu Wang. "The Study of Ion Beam Assisted Deposition of CuInSe2 Absorber Films." Materials Science Forum 900 (July 2017): 78–82. http://dx.doi.org/10.4028/www.scientific.net/msf.900.78.

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Based on the selenium ion beam assisted magnetron sequential sputtering technology, low temperature deposition of CIS thin-film solar cells in high quality can be achieved. By comparing with the method of conventional gas phase atomic deposition, and through simulated analysis from the perspective of diffusion uniformity, numerical calculation on the depth of ion beam injection is proceeded. First, according to the classical collision theory in molecular dynamics, the theoretical calculation on the process of ion implantation is done; the concentration distribution of implanted selenium ions can be got by using TRIM program for simulation analysis. On this basis, the concentration distribution of selenium ion after diffusion can be further obtained. Finally, the calculation model is established; through comparison and analysis, when the selenium diffusion uniformity is same in the both conditions, the substrate temperature T1 needed for ion beam assisted deposition and the substrate temperature T2 needed for gas phase atomic deposition are respectively calculated. The calculation results show that on the premise of merely considering the depth of implanted ions, from the perspective of the diffusion uniformity, the selenium ion beam assisted deposition technique can obviously reduce the substrate temperature comparing with traditional vapor deposition technology.
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22

Miralami, Raheleh, Hani Haider, John G. Sharp, Fereydoon Namavar, Curtis W. Hartman, Kevin L. Garvin, Carlos D. Hunter, Thyagaseely Premaraj, and Geoffrey M. Thiele. "Surface nano-modification by ion beam–assisted deposition alters the expression of osteogenic genes in osteoblasts." Proceedings of the Institution of Mechanical Engineers, Part H: Journal of Engineering in Medicine 233, no. 9 (June 21, 2019): 921–30. http://dx.doi.org/10.1177/0954411919858018.

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Biomaterials with enhanced biocompatibility are favored in implant studies to improve the outcomes of total joint replacement surgeries. This study tested the hypothesis that nano-structured surfaces for orthopedic applications, produced by the ion beam–assisted deposition method, would enhance osteointegration by altering the expression of bone-associated genes in osteoblasts. The ion beam–assisted deposition technique was employed to deposit nano-films on glass or titanium substrates. The effects of the ion beam–assisted deposition produced surfaces on the human osteosarcoma cell line SAOS-2 at the molecular level were investigated by assays of adhesion, proliferation, differentiation, and apoptosis on coated surfaces versus uncoated cobalt–chrome, as the control. Ion beam–assisted deposition nano-coatings enhanced bone-associated gene expression at initial cell adhesion, proliferation, and differentiation compared to cobalt–chrome surfaces as assessed by polymerase chain reaction techniques. Increased cell proliferation was observed using a nuclear cell proliferation–associated antigen. Moreover, enhanced cell differentiation was determined by alkaline phosphatase activity, an indicator of bone formation. In addition, programmed cell death assessed by annexin V staining and flow cytometry was lower on nano-surfaces compared to cobalt–chrome surfaces. Overall, the results indicate that nano-coated surfaces produced by the ion beam–assisted deposition technique for use on implants were superior to orthopedic grade cobalt–chrome in supporting bone cell adhesion, proliferation, and differentiation and reducing apoptosis. Thus, surface properties altered by the ion beam–assisted deposition technique should enhance bone formation and increase the biocompatibility of bone cell–associated surfaces.
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23

He, Zhigang, Shinichiro Inoue, George Carter, Hamid Kheyrandish, and John S. Colligon. "Ion-beam-assisted deposition of Si-carbide films." Thin Solid Films 260, no. 1 (May 1995): 32–37. http://dx.doi.org/10.1016/0040-6090(94)06465-2.

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24

Donovan, E. P., D. R. Brighton, G. K. Hubler, and D. van Vechten. "Ion beam assisted deposition of substoichiometric silicon nitride." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 19-20 (January 1987): 983–86. http://dx.doi.org/10.1016/s0168-583x(87)80196-9.

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25

Matias, Vladimir, Brady J. Gibbons, and D. Matthew Feldmann. "Coated conductors textured by ion-beam assisted deposition." Physica C: Superconductivity and its Applications 460-462 (September 2007): 312–15. http://dx.doi.org/10.1016/j.physc.2007.03.357.

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26

Dong, L., and D. J. Srolovitz. "Texture development mechanisms in ion beam assisted deposition." Journal of Applied Physics 84, no. 9 (November 1998): 5261–69. http://dx.doi.org/10.1063/1.368794.

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27

Kubota, Hiroshi, Jen Sue Chen, Masanori Nagata, Elzbieta Kolawa, and Marc Aurele Nicolet. "Ion-Beam-Assisted Deposition of TiN Thin Films." Japanese Journal of Applied Physics 32, Part 1, No. 8 (August 15, 1993): 3414–19. http://dx.doi.org/10.1143/jjap.32.3414.

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28

Xu, Zheng, Toshihiko Kosugi, Kenji Gamo, and Susumu Namba. "Ion Beam Assisted Deposition of Tungsten on GaAs." Japanese Journal of Applied Physics 29, Part 2, No. 1 (January 20, 1990): L23—L26. http://dx.doi.org/10.1143/jjap.29.l23.

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29

Fedotov, Serguei A., Andrey A. Efimchik, and Alexey V. Byeli. "Ion Beam Assisted Deposition: A Molecular Dynamics Simulation." Materials and Manufacturing Processes 12, no. 3 (May 1997): 529–39. http://dx.doi.org/10.1080/10426919708935162.

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30

Oechsner, H. "Ion and plasma beam assisted thin film deposition." Thin Solid Films 175 (August 1989): 119–27. http://dx.doi.org/10.1016/0040-6090(89)90818-3.

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31

Neubeck, K., R. Nitsche, H. Hahn, L. Alberts, G. K. Wolf, and M. Friz. "Ion beam assisted deposition of ZrO2 thin films." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 106, no. 1-4 (December 1995): 110–15. http://dx.doi.org/10.1016/0168-583x(95)00687-7.

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32

Donovan, E. P., G. K. Hubler, M. S. Mudholkar, and L. T. Thompson. "Ion-beam-assisted deposition of molybdenum nitride films." Surface and Coatings Technology 66, no. 1-3 (August 1994): 499–504. http://dx.doi.org/10.1016/0257-8972(94)90056-6.

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33

Bhattacharya, Rabi S., A. K. Rai, and A. W. McCormick. "Ion-beam-assisted deposition of Al2O3 thin films." Surface and Coatings Technology 46, no. 2 (July 1991): 155–63. http://dx.doi.org/10.1016/0257-8972(91)90158-s.

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34

Jin, C. G., X. M. Wu, and L. J. Zhuge. "Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition." Research Letters in Physical Chemistry 2008 (April 3, 2008): 1–5. http://dx.doi.org/10.1155/2008/760650.

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Silicon carbide (SiC) films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV) was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.
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35

Bricault, R. J., P. Sioshansi, and S. N. Bunker. "Deposition of boron nitride thin films by ion beam assisted deposition." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 21, no. 1-4 (January 1987): 586–87. http://dx.doi.org/10.1016/0168-583x(87)90912-8.

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36

Ma, Zhenqiang, and Gary S. Was. "Aluminum metallization for flat-panel displays using ion-beam-assisted physical vapor deposition." Journal of Materials Research 14, no. 10 (October 1999): 4051–61. http://dx.doi.org/10.1557/jmr.1999.0547.

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Failures in aluminum interconnects in display control devices are often caused by the formation of hillocks during postdeposition annealing. Ion-beam-assisted deposition was used to create a (110) out-of-plane texture in aluminum films to suppress hillocking. X-ray diffraction was used to quantify the (110)/(111) out-of-plane texture ratio, and scanning electron microscopy and atomic force microscopy were used to characterize the surface topology. Results show that no hillocks were observed on (110)-textured aluminum films following annealing for 30 min at 450 °C. Following annealing, the resistivity of the films made by ion-beam-assisted deposition recovered to within a factor of 2 of the physical-vapor-deposition films. Results show that ion-beam-assisted deposition can effectiv09ely modify the aluminum out-of-plane texture in such a way that hillock suppression can be achieved without significant change in resistivity.
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37

Aisenberg, S., and F. M. Kimock. "Ion Beam and Ion-Assisted Deposition of Diamond-Like Carbon Films." Materials Science Forum 52-53 (January 1991): 1–40. http://dx.doi.org/10.4028/www.scientific.net/msf.52-53.1.

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38

Gerlach, J. W., P. Schumacher, M. Mensing, S. Rauschenbach, I. Cermak, and B. Rauschenbach. "Ion mass and energy selective hyperthermal ion-beam assisted deposition setup." Review of Scientific Instruments 88, no. 6 (June 2017): 063306. http://dx.doi.org/10.1063/1.4985547.

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39

Yixin, Yan. "Broad beam cold cathode ion source for an ion assisted deposition." Vacuum 42, no. 16 (1991): 1096–97. http://dx.doi.org/10.1016/0042-207x(91)91478-7.

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40

Wituschek, H., M. Barth, W. Ensinger, G. Frech, D. M. Rück, K. D. Leible, and G. K. Wolf. "ALLIGATOR−An apparatus for ion beam assisted deposition with a broad‐beam ion source." Review of Scientific Instruments 63, no. 4 (April 1992): 2411–13. http://dx.doi.org/10.1063/1.1142946.

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41

Kotov, D. A. "Broad beam low-energy ion source for ion-beam assisted deposition and material processing." Review of Scientific Instruments 75, no. 5 (May 2004): 1934–36. http://dx.doi.org/10.1063/1.1702109.

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42

Sueda, Minoru, Toshiro Kobayashi, Tadashi Rokkaku, Yasuhiro Fukaya, Tetsuyoshi Wada, Nobuki Yamashita, Hajime Yoshioka, and Satoshi Morimoto. "Formation of cBN Films by Ion Beam Assisted Deposition." Journal of the Japan Institute of Metals 57, no. 8 (1993): 932–37. http://dx.doi.org/10.2320/jinstmet1952.57.8_932.

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43

Scaglione, S., D. Flori, I. Soymié, and A. Piegari. "Laser optical coatings produced by ion beam assisted deposition." Thin Solid Films 214, no. 2 (July 1992): 188–93. http://dx.doi.org/10.1016/0040-6090(92)90768-7.

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44

Kennedy, M., D. Ristau, and H. S. Niederwald. "Ion beam-assisted deposition of MgF2 and YbF3 films." Thin Solid Films 333, no. 1-2 (November 1998): 191–95. http://dx.doi.org/10.1016/s0040-6090(98)00847-5.

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45

Akbari, A., C. Templier, M. F. Beaufort, D. Eyidi, and J. P. Riviere. "Ion beam assisted deposition of TiN–Ni nanocomposite coatings." Surface and Coatings Technology 206, no. 5 (November 2011): 972–75. http://dx.doi.org/10.1016/j.surfcoat.2011.03.102.

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46

Moussant, C., R. Antony, A. Moliton, and G. Froyer. "Electroluminescence of parasexiphenyl prepared by ion beam assisted deposition." Synthetic Metals 102, no. 1-3 (June 1999): 1093–94. http://dx.doi.org/10.1016/s0379-6779(98)01380-0.

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47

Mori, Takanori, Makoto Fujiwara, Rafael R. Manory, Ippei Shimizu, Takeo Tanaka, and Shoji Miyake. "HfO2 thin films prepared by ion beam assisted deposition." Surface and Coatings Technology 169-170 (June 2003): 528–31. http://dx.doi.org/10.1016/s0257-8972(03)00189-0.

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48

Hioki, T., K. Okumura, Y. Itoh, S. Hibi, and S. Noda. "Formation of carbon films by ion-beam-assisted deposition." Surface and Coatings Technology 65, no. 1-3 (January 1994): 106–11. http://dx.doi.org/10.1016/s0257-8972(94)80015-4.

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49

Demaree, J. D., C. G. Fountzoulas, and J. K. Hirvonen. "Chromium nitride coatings produced by ion beam assisted deposition." Surface and Coatings Technology 86-87 (December 1996): 309–15. http://dx.doi.org/10.1016/s0257-8972(96)03035-6.

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50

Schwarz, G., F. Friess, and G. K. Wolf. "Deposition of c-BN by ion beam assisted CVD." Surface and Coatings Technology 125, no. 1-3 (March 2000): 106–10. http://dx.doi.org/10.1016/s0257-8972(99)00608-8.

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