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Dissertations / Theses on the topic 'Ion bombardment'

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Published: 4 June 2021

Last updated: 25 July 2025

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1

McLaren, M. G. "Ion bombardment induced deposition of tungsten." Thesis, University of Salford, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308526.

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2

Samartsev, Andrey V. "Sputtering of Indium under polyatomic ion bombardment." [S.l. : s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=976510278.

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3

Whitlow, Harry James. "Ion-materials interactions and their application." Thesis, University of Bath, 1998. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.285272.

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4

Kucheyev, Sergei Olegovich. "Ion-beam processes in group-III nitrides." View thesis entry in Australian Digital Theses Program, 2002. http://thesis.anu.edu.au/public/adt-ANU20030211.170915/index.html.

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5

Locklear, Jay Edward. "Secondary ion emission under keV carbon cluster bombardment." Diss., Texas A&M University, 2006. http://hdl.handle.net/1969.1/4273.

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Secondary ion mass spectrometry (SIMS) is a surface analysis technique capable of providing isotopic and molecular information. SIMS uses keV projectiles to impinge upon a sample resulting in secondary ion emission from nanometric dimensions. It is well documented that secondary ion emission is enhanced using cluster projectiles compared to atomic projectiles. Previous studies of enhanced secondary ion yields with cluster projectiles have led to the present study dealing with the scope of C60 as a projectile for SIMS. The secondary ion yields (i.e., the number of secondary ions detected per pr

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6

Zeroual, Boudjemaa. "Ion bombardment induced damage and annealing in Si." Thesis, University of Salford, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.258251.

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7

Yin, Jian. "Mechanism studies of fast atom bombardment mass spectrometry." Thesis, Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/25987.

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8

Alzaim, Safa. "Studies of nanostructure fabrication and morphology development during ion bombardment as a function of bombardment angle." Thesis, Boston University, 2008. https://hdl.handle.net/2144/27575.

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Thesis (B.A.)--Boston University. University Professors Program Senior theses.<br>PLEASE NOTE: Boston University Libraries did not receive an Authorization To Manage form for this thesis. It is therefore not openly accessible, though it may be available by request. If you are the author or principal advisor of this work and would like to request open access for it, please contact us at open-help@bu.edu. Thank you.<br>In order to investigate the behavior of nanostructures during the widely-used process of ion bombardment, the mechanisms of ion bombardment on nanostructures were studied. Nanostr

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9

Zabeida, Oleg Vasilyevich. "Study of ion bombardment characteristics in high frequency plasmas." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp03/NQ53549.pdf.

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10

SAXE, STEVEN GARY. "ION-INDUCED PROCESSES IN OPTICAL COATINGS (BOMBARDMENT, THIN FILMS)." Diss., The University of Arizona, 1985. http://hdl.handle.net/10150/188076.

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Nearly all the deficiencies of conventional vacuum evaporated coatings trace to a single physical property of condensed films: low packing density. One way to increase packing density is to bombard the growing film with ions during deposition, called ion-assisted deposition (IAD). The beginning chapters of this dissertation analyze IAD as a perturbation of the conventional vacuum evaporation process. The experimental chapters begin with an examination of the effect on moisture penetration behavior of oxygen-ion bombarding completed optical filters. Moisture adsorption and desorption is retarde

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11

Lamouri, Abbas. "Low-energy sputtering of Teflon by oxygen ion bombardment." Case Western Reserve University School of Graduate Studies / OhioLINK, 1991. http://rave.ohiolink.edu/etdc/view?acc_num=case1055777824.

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12

Arnold, John Christopher 1964. "Modification of Schottky diode performance due to ion bombardment." Thesis, The University of Arizona, 1989. http://hdl.handle.net/10150/277047.

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An experimental and theoretical analysis of the effects of ion bombardment on Schottky diodes is presented. The experimentally observed shifts in diode performance are compared to the conditions of ion exposure. These experiments show that Schottky diodes exposed to ion beams show decreases in effective barrier heights and ideality factors, as well as increased incidence of premature reverse breakdown. The change in barrier height is found to be proportional to the energy of the individual ions and the total number of ions delivered to the surface. A numerical simulation of the damage process

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13

Anzenberg, Eitan. "Nanoscale surface structuring during ion bombardment of elemental semiconductors." Thesis, Boston University, 2013. https://hdl.handle.net/2144/12710.

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Thesis (Ph.D.)--Boston University PLEASE NOTE: Boston University Libraries did not receive an Authorization To Manage form for this thesis or dissertation. It is therefore not openly accessible, though it may be available by request. If you are the author or principal advisor of this work and would like to request open access for it, please contact us at open-help@bu.edu. Thank you.<br>Nano-patterning of surfaces with uniform ion bombardment yields a rich phase-space of topographic patterns. Particle irradiation can cause surface ultra-smoothing or selforganized nanoscale pattern formation in

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14

Chen, Liang-Yu. "Secondary ions sputtered by low energy ion bombardment of copper and aluminum surfaces." Case Western Reserve University School of Graduate Studies / OhioLINK, 1995. http://rave.ohiolink.edu/etdc/view?acc_num=case1058535998.

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15

Hsieh, Jang-Hsing. "The effects of energetic particles bombardment on the properties of ion plated chromium thin films." Diss., Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/19489.

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16

Yewande, Emmanuel Oluwole. "Modelling and simulation of surface morphology driven by ion bombardment." Doctoral thesis, [S.l.] : [s.n.], 2006. http://webdoc.sub.gwdg.de/diss/2006/yewande.

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17

Katardjiev, I. V. "Theory and experimental studies of surface evolution during ion bombardment." Thesis, University of Salford, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234793.

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18

Kunkel, Gary John. "Interlaboratory comparisons of fast atom bombardment and liquid secondary ion mass spectra of diquaternary pyridinium oxime salts." Thesis, Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/27336.

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19

Wang, Yang. "Theory of impact ionization in multiquantum well structures and its application to the modeling of avalanche photodiodes." Diss., Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/13405.

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20

Cross, T. A. "Radiation effects in AlxÌ²Ga1Ì²-Ì²xÌ²As and InP." Thesis, Lancaster University, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379263.

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21

Payne, Robin Spencer. "Inert gas implantation of amorphous CuZr." Thesis, University of Surrey, 1987. http://epubs.surrey.ac.uk/847884/.

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It was proposed that amorphous alloys may be more resistant to radiation damage than crystalline metals. In crystalline metals neutron induced transmutations lead to the formation of inert gas bubbles. These preferentially nucleate near line defects and result in embrittlement. Amorphous alloys do not contain sites where nucleation can occur preferentially. In this work the growth of argon bubbles in amorphous Cu[50]Zr[50] has been induced by implanting thin specimens with 80keV argon ions at room temperature. The bubble size distribution was obtained over the dose range 5x10[16] to 3x10[17] A

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22

Naylor, S. "Applications and mechanistic aspects of fast atom bombardment mass spectroscopy." Thesis, University of Cambridge, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234018.

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23

Chai, Meng Koon. "Modification of metal contacts to hydrogenated amorphous silicon by ion bombardment." Thesis, University of Surrey, 1998. http://epubs.surrey.ac.uk/843707/.

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This thesis is concerned with the formation, characterisation and application of doped surface layers in hydrogenated amorphous silicon, a-Si:H. In this study, a-Si:H films have been deposited using a plasma enhanced chemical vapour deposition (PECVD) system and have been doped using ion implantation. In order to determine the efficiency of implantation doping various ion species, ion doses, and ion energies were made by direct implantation of impurities at low energies. Coupled with the annealing effect, the effect of doping on damage recovery has been studied. It has been shown that there is

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24

Brown, Douglas Andrew. "Theoretical study of two-dimensional charge densities in intense rectangular ion beams." Diss., The University of Arizona, 1992. http://hdl.handle.net/10150/185939.

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Beginning with its emergence from a high-aspect ratio rectangular aperture, the physics of an intense (current density ≳ 1 mA/cm²), positively charged ion beam is explored in two distinct regions: an electron-free drift region, and a beam plasma containing a large density of space-charge neutralizing electrons. In the drift region, the beam expands due to the mutual inter-ion Coulomb repulsion. Energy, mass, and phase-space density conservation are combined with Poisson's equation to obtain the beam ion density and resulting potential of the diverging beam at any point in 3-dimensional space.

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25

Green, Lisa Carol. "Fast atom bombardment mass spectra of pyrylium and pyridinium salts : the study of isotopic abundance ratios in various sputtering matrices." Thesis, Georgia Institute of Technology, 1991. http://hdl.handle.net/1853/27441.

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26

Little, Thomas William. "Surface science studies on the interaction of nitrogen trifluoride ion beams and plasmas with silicon /." Thesis, Connect to this title online; UW restricted, 1999. http://hdl.handle.net/1773/10613.

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27

King, Stanley W. "Mass transfer analysis of polyether sulfone and polyamide membranes modified by ion beam irradiation /." See Full Text at OhioLINK ETD Center (Requires Adobe Acrobat Reader for viewing), 2004. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=toledo1083875419.

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Thesis (M.S.C.)--University of Toledo, 2004.<br>Typescript. "A thesis [submitted] as partial fulfillment of the requirements of the Master of Science degree in Chemical Engineering." Bibliography: leaves 109-113.

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28

Beckman, Michael William. "The effects of low pressure helium ion bombardment on hydrogenated amorphous silicon." [Ames, Iowa : Iowa State University], 2008.

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29

Liu, Joanne. "Scaling relationships for power deposition and ion bombardment in radio-frequency plasmas." Thesis, Massachusetts Institute of Technology, 1993. http://hdl.handle.net/1721.1/31038.

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30

Epp, June Miriam. "The effects of ion bombardment on the chemical reactivity of GaAs(100)." Diss., Virginia Polytechnic Institute and State University, 1989. http://hdl.handle.net/10919/54355.

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The effects of ion bombardment on the chemical reactivity of GaAs(100) were investigated by X-ray photoelectron spectroscopy. The enhancement in reactivity was shown to be related to the energy and mass of the bombarding ion. The oxidation results were compared to chemically cleaned (1:1 HCI(conc)/H₂O) and IHT (simultaneous ion/heat treatment) prepared GaAs(100). Before ion bombardment, GaAs(100) was chemically cleaned with 1:1 HCI(conc)/H₂O to remove surface oxides. Chemically cleaned GaAs was bombarded with 0.5-3 KeV Ar⁺ ions (fluences = 10¹⁶-10¹⁷ ions/cm²) and with 3 KeV Xe⁺, Ar⁺, ²⁰Ne⁺, a

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31

Osman, Sarah Omer Siddig. "Surface roughness of InP after N+2 bombardment : Ion areic dose dependence." Diss., University of Pretoria, 2004. http://hdl.handle.net/2263/24608.

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32

Sen, Sidhartha. "Electrical studies on ion-etched n-GaAs(100) surfaces." Thesis, Virginia Tech, 1987. http://hdl.handle.net/10919/45915.

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<p>The major objective of this thesis was to evaluate electrically the damage caused by a low energy (< 4keV) Ar<sup>+</sup> bombardment on n-GaAs(100) surfaces. Electrical measurements were performed on Schottlky diodes formed on the virgin and the ion-etched surfaces.</p><p> The l-V measurements show deterioration of diode parameters by ion etching. The ion etched diodes have a strong component of surface leakage current. The high frequency capacitance of ion-etched diodes is less than that of the virgin diodes. The low frequency capacitance of ion-etched diodes was found to be frequ

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33

Chen, Geng-Sheng. "Ion beam mixing of Mo/Al bilayer samples and thermal spike effects." Thesis, Virginia Polytechnic Institute and State University, 1987. http://hdl.handle.net/10919/94500.

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Metallic bilayer samples of Mo(400 Å)/ Al(substrate) were characterized using Rutherford Backscattering Spectroscopy after first being irradiated with Xe ion beam having an energy of 1.8 MeV. The computer code RUMP was then used to simulate the RBS spectra. The interdiffusion at the interface was considered in terms of thermal spike induced atomic migration. It was found that the coupling of the chemical effect with spike is significant with regard to mixing of the bilayer samples. Furthermore, in addition to the initial contamination of carbon atoms on the surface and at the interface, more c

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34

Ghalab, Sobhy Ahmed Nassar Ahmed. "Metal cluster sputtering under reactive ion bombardment investigated by TOF-SNMS-laser-system." kostenfrei, 2005. http://deposit.ddb.de/cgi-bin/dokserv?idn=97813592X.

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35

Choudhury, Tanima. "An XPS study of the effect of ion bombardment on transition metal oxides." Thesis, Aston University, 1991. http://publications.aston.ac.uk/25142/.

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36

Mohan, Krishnan R. "Fast atom bombardment mass spectrometry and tandem mass spectrometry : conditions for measurement of reproducible spectra." Thesis, Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/27159.

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37

Wei, Yu. "Ion bombardment induced compositional changes in compound semiconductor surfaces by XPS combined with LEISS." Thesis, Aston University, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.282997.

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38

Al-Bayati, Amir H. H. "Radiation damage in Si(001) due to low energy Ar and Cl ion bombardment." Thesis, University of Salford, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.280801.

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39

Yu, Lock See. "The effect of low energy ion bombardment on the crystallographic orientation of thin films." Thesis, Massachusetts Institute of Technology, 1985. http://hdl.handle.net/1721.1/15310.

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Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1985.<br>MICROFICHE COPY AVAILABLE IN ARCHIVES AND SCIENCE.<br>Includes bibliographical references.<br>by Lock See Yu.<br>M.S.

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40

Hwangbo, Chang Kwon. "Optical thin films prepared by ion-assisted and ultrasound-assisted deposition." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184577.

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Optical, electrical, and microstructural effects of Ar ion bombardment and Ar incorporation on thermally evaporated Ag and Al thin films were investigated. The results show that as the momentum supplied to the growing films by the bombarding Ar ions per arriving metal atom increases, refractive index at 632.8 nm increases and extinction coefficient decreases, lattice spacing expands, grain size decreases, electrical resistivity increases, and trapped Ar increases slightly. In Ag films, stress reverses from tensile to compressive; in AI films compressive stress increases. In both films, the cha

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41

Oates, Thomas William Henry. "Metal plasma immersion ion implantation and deposition using polymer substrates." Connect to full text, 2003. http://hdl.handle.net/2123/571.

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Thesis (Ph. D.)--University of Sydney, 2004.<br>Title from title screen (viewed 5 May 2008). Submitted in fulfilment of the requirements for the degree of Doctor of Philosophy to the School of Physics, Faculty of Science. Degree awarded 2004; thesis submitted 2003. Includes bibliographical references. Also available in print form.

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42

Numazawa, Satoshi. "Modeling of metal nanocluster growth on patterned substrates and surface pattern formation under ion bombardment." Forschungszentrum Dresden, 2012. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-93652.

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This thesis addresses the metal nanocluster growth process on prepatterned substrates, the development of atomistic simulation method with respect to an acceleration of the atomistic transition states, and the continuum model of the ion-beam inducing semiconductor surface pattern formation mechanism. Experimentally, highly ordered Ag nanocluster structures have been grown on pre-patterned amorphous SiO^2 surfaces by oblique angle physical vapor deposition at room temperature. Despite the small undulation of the rippled surface, the stripe-like Ag nanoclusters are very pronounced, reproducible

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43

Yu, Wei. "Ion bombardment induced compositional changes in compound semiconductor surfaces studied by XPS combined with LEISS." Thesis, Aston University, 1995. http://publications.aston.ac.uk/8095/.

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Surface compositional change of GaP, GaAs, GaSb, InP, InAs, InSb, GeSi and CdSe single crystals due to low keV noble gas ion beam bombardment has been investigated by combining X-ray Photoelectron Spectroscopy (XPS) and Low Energy Ion Scattering Spectroscopy (LEISS). The purpose of using this complementary analytical method is to obtain more complete experimental evidence of ion beam modification in surfaces of compound semiconductors and GeSi alloy to improve the understanding of the mechanisms responsible for these effects. Before ion bombardment the sample surfaces were analysed nondestruct

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44

Winchell, Stephen D. "Transport imaging in the one dimensional limit." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2006. http://library.nps.navy.mil/uhtbin/hyperion/06Jun%5FWinchell.pdf.

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45

Dodgson, John. "Ion-selective field-effect transistors with fast atom bombardment sputtered membranes for pH, sodium and potassium measurement." Thesis, University of Newcastle Upon Tyne, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283651.

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46

Sangheera, Harpreet Kaur. "Investigation of the effects of low energy high dose ion bombardment in metals and compound semiconductors." Thesis, Aston University, 1998. http://publications.aston.ac.uk/7983/.

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The effect of low energy nitrogen molecular ion beam bombardment on metals and compound semiconductors has been studied, with the aim to investigate at the effects of ion and target properties. For this purpose, nitrogen ion implantation in aluminium, iron, copper, gold, GaAs and AIGaAs is studied using XPS and Angle Resolve XPS. A series of experimental studies on N+2 bombardment induced compositional changes, especially the amount of nitrogen retained in the target, were accomplished. Both monoenergetic implantation and non-monoenergetic ion implantation were investigated, using the VG Scien

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47

Kwasnik, Mark. "Development and fundamental characterization of a nanoelectrospray ionization atmospheric pressure drift time ion mobility spectrometer." Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33879.

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Drift time ion mobility spectrometry (DTIMS) is a rapid post ionization gas-phase separation technique that distinguishes between compounds based on their differences in reduced mass, charge and collisional cross-section while under a weak, time-invariant electric field. Standalone DTIMS is currently employed throughout the world for the detection of explosives, drugs and chemical-warfare agents. The coupling of IMS to MS (IM-MS) has enabled the performance of time-nested multidimensional separations with high sample throughput and enhanced peak capacity, allowing for the separation of ions no

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48

Jaichuen, C., R. Chundet, L. D. Yu, P. Thongkumkoon, and S. Anuntalabhochai. "Effect on Genetic Mutation Induction from Nano-Ranged Low-Energy Plasma Ion Bombardment of DNA and Gene Fragment." Thesis, Sumy State University, 2012. http://essuir.sumdu.edu.ua/handle/123456789/34948.

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49

Mokhtarzadeh, Mahsa. "Nano-patterning by ion bombardment." Thesis, 2018. https://hdl.handle.net/2144/34769.

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The bombardment of surfaces by ions can lead to the spontaneous formation of nano-structures. Depending on the irradiation conditions, smoothening or roughening mechanisms can be the leading order in pattern formation which can result in the creation of dots, ripples or ultra-smoothening effects. Because ion bombardment is already ubiquitous in industrial settings, and is relatively inexpensive compared to other surface processing techniques, self-organized patterning by ion bombardment could enable a simple, economical means of inducing well-defined nanoscale structures in a variety of

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50

Höink, Volker. "Magnetoresistance and ion bombardment induced magnetic patterning /." 2008. http://nbn-resolving.de/urn/resolver.pl?urn=urn:nbn:de:hbz:361-12714.

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