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Journal articles on the topic 'Ion implantation defect'

Author: Grafiati

Published: 4 June 2021

Last updated: 4 February 2022

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1

Lam, Nghi Q., and Gary K. Leaf. "Mechanisms and kinetics of ion implantation." Journal of Materials Research 1, no. 2 (1986): 251–67. http://dx.doi.org/10.1557/jmr.1986.0251.

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The evolution of the implant distribution during ion implantation at elevated temperatures has been theoretically studied using a comprehensive kinetic model. In the model foreign atoms, implanted into both interstitial and substitutional sites of the host lattice, could interact with implantation-induced point defects and with extended sinks such as the bombarded surface. The synergistic effects of preferential sputtering, radiation-enhanced diffusion, and radiation-induced segregation, as well as the influence of nonuniform defect production, were taken into account. The bombarded surface wa

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2

Svensson, Bengt Gunnar, Anders Hallén, J. Wong-Leung, et al. "Ion Implantation Processing and Related Effects in SiC." Materials Science Forum 527-529 (October 2006): 781–86. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.781.

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A brief survey is given of some recent progress regarding ion implantation processing and related effects in 4H- and 6H-SiC. Four topics are discussed; an empirical ion range distribution simulator, dynamic defect annealing during implantation, formation of highly p+-doped layers, and deactivation of N donors by ion-induced defects.

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Kögler, Reinhard, A. Mücklich, W. Anwand, F. Eichhorn, and Wolfgang Skorupa. "Defect Engineering for SIMOX Processing." Solid State Phenomena 131-133 (October 2007): 339–44. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.339.

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SIMOX (Separation-by-Implantation-of-Oxygen) is an established technique to fabricate silicon-on-insulator (SOI) structures by oxygen ion implantation into silicon. The main problem of SIMOX is the very high oxygen ion fluence and the related defects. It is demonstrated that vacancy defects promote and localize the oxide growth. The crucial point is to control the distribution of vacancies. Oxygen implantation generates excess vacancies around RP/2 which act as trapping sites for oxide growth outside the region at the maximum concentration of oxygen at RP. The introduction of a narrow cavity l

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4

SHOW, YOSHIYUKI, DAISUKE SEKINE, HIROKAZU ITO, TOMIO IZUMI, and MITSUO IWASE. "THE EFFECTS OF DEFECTS ON THE ELECTRICAL PROPERTIES OF AMORPHOUS CARBON LAYER FORMED BY ION IMPLANTATION INTO CVD DIAMOND FILMS." International Journal of Modern Physics B 14, no. 02n03 (2000): 218–23. http://dx.doi.org/10.1142/s0217979200000212.

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Correlation between defects and electrical properties in an amorphous carbon layer, formed by ion implantation into diamond film, have been studied by ESR method. The ion implantation produced dense defect structures (carbon dangling bonds) in the surface layer and led the implanted layer to a low resistance, as the high-density defect introduced variable range hopping conduction. The variable range hopping conduction was observed even after annealing at 1000°C, because the high-density defect existed in the surface region.

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5

Zhao, Yong, Shuo Hou, Xiao Jun Liang, Li Guang Fang, Guang Hu Sheng, and Fei Xu. "Si Ion Implantation-Induced Defect Photoluminescence in Silica Films." Advanced Materials Research 160-162 (November 2010): 1450–57. http://dx.doi.org/10.4028/www.scientific.net/amr.160-162.1450.

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Dry and wet oxidation silica films doped with silicon ions were prepared using metal vapor vacuum arc (MEVVA) ion source implanter. The does of Si ion beams were kept constant at 3×1016 /cm2 and the energy varied from 42KeV to 70KeV. Five photoluminescence (PL) bands at the wavelength of 560nm, 580nm, 620nm, 650nm and 730nm have been observed at room temperature in all samples. The results of XRD showed none of Si nanocrystals were formed in the as-implanted silica films and originations of the PL bands were defects introduced by implantation. The 560nm PL band originated from oxygen surplus d

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6

Sands, T. "Application of Cross-Sectional Transmission Electron Microscopy to the Characterization of Ion-Implanted Semiconductors." Proceedings, annual meeting, Electron Microscopy Society of America 43 (August 1985): 292–95. http://dx.doi.org/10.1017/s0424820100118357.

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Direct implantation of dopant ions is the most precise method for obtaining a desired dopant profile in a semiconductor substrate. However, in order to achieve satisfactory electrical properties, lattice defects introduced by the energetic dopant ions and by the subsequent annealing process must be confined or eliminated. Because of the many parameters which can be varied during implantation and annealing, it is not generally feasible to survey all conditions. Consequently, the most efficient approach is to understand the mechanisms of defect formation and annealing so that guidelines for choo

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7

Gawlik, Grzegorz, Paweł Ciepielewski, and Jacek Baranowski. "Study of Implantation Defects in CVD Graphene by Optical and Electrical Methods." Applied Sciences 9, no. 3 (2019): 544. http://dx.doi.org/10.3390/app9030544.

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A Chemical Vapor Deposition graphene monolayer grown on 6H–SiC (0001) substrates was used for implantation experiments. The graphene samples were irradiated by He+ and N+ ions. The Raman spectra and electrical transport parameters were measured as a function of increasing implantation fluence. The defect concentration was determined from intensity ratio of the Raman D and G peaks, while the carrier’s concentration was determined from the relations between G and 2D Raman modes energies. It was found that the number of defects generated by one ion is 0.0025 and 0.045 and the mean defect radius a

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8

Aoki, Takaaki, Jiro Matsuo, Gikan Takaoka, Noriaki Toyoda, and Isao Yamada. "Defect characteristics by boron cluster ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 206 (May 2003): 855–60. http://dx.doi.org/10.1016/s0168-583x(03)00878-4.

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Wesch, W., E. Wendler, G. Götz, and N. P. Kekelidse. "Defect production during ion implantation of variousAIIIBVsemiconductors." Journal of Applied Physics 65, no. 2 (1989): 519–26. http://dx.doi.org/10.1063/1.343134.

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10

Yao, Xing Nan, Yue Hu Wang, and Yu Tian Wang. "Characterizing Defects Induced by Irradiation Damage in 6H-SiC." Defect and Diffusion Forum 382 (January 2018): 325–31. http://dx.doi.org/10.4028/www.scientific.net/ddf.382.325.

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There are many methods describing defects induced by ion implantation, but none are capable of describing it quantitatively. In order to solve this problem, we studied the magnetic change of silicon carbide (SiC) after ion implantation, and found that even if the implantation intensity and defects were increased, we found that all samples have the same paramagnetic background. In this paper, we use the paramagnetic characteristics shown by part of the defects to characterize the degree of defects. We studied how to characterize the concentration of the defect, using the Brillouin function to f

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11

Kögler, Reinhard, A. Mücklich, J. R. Kaschny, et al. "Defect Engineering in Ion Beam Synthesis of SiC and SiO₂ in Si." Solid State Phenomena 108-109 (December 2005): 321–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.321.

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Different methods of defect engineering are applied in this study for ion beam synthesis of a buried layer of SiC and SiO2 in Si. The initial state of phase formation is investigated by implantation of relatively low ion fluences. He-induced cavities and Si ion implantation generated excess vacancies are intentionally introduced in the Si substrate in order to act as trapping centers for C and O atoms and to accommodate volume expansion due to SiC and SiO2 phase formation. Especially the simultaneous dual implantation is shown to be an effective method to achieve better results from ion beam s

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Auret, F. Danie, Walter E. Meyer, M. Diale, et al. "Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation." Materials Science Forum 679-680 (March 2011): 804–7. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.804.

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Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reprodu

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13

Kaushik, Priya Darshni, Gholam Reza Yazdi, Garimella Bhaskara Venkata Subba Lakshmi, Grzegorz Greczynski, Rositsa Yakimova, and Mikael Syväjärvi. "Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation." Applied Sciences 10, no. 11 (2020): 4013. http://dx.doi.org/10.3390/app10114013.

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Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation. At the initial fluence, sp3 defects appeared in EG; higher fluences resulted in vacancy defects as well as in an increased defect density. The increased fluence created a decrease in the intensity of the prominent peak of SiC as well as of the overall relative Raman intensity. The X-ray photoelectron spectroscopy (XPS) showed a reduction of the peak intensity of gr

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Muntifering, Brittany, Jianmin Qu, and Khalid Hattar. "MINIMAL VARIATION OF DEFECT STRUCTURE DUE TO THE ORDER OF ROOM TEMPERATURE HYDROGEN ISOTOPE IMPLANTATION AND SELF-ION IRRADIATION IN NICKEL." MRS Advances 1, no. 42 (2016): 2887–92. http://dx.doi.org/10.1557/adv.2016.396.

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ABSTRACTThe formation and stability of radiation-induced defects in structural materials in reactor environments significantly effects their integrity and performance. Hydrogen, which may be present in significant quantities in future reactors, may play an important role in defect evolution. To characterize the effect of hydrogen on cascade damage evolution, in-situ TEM self-ion irradiation and deuterium implantation was performed, both sequentially and concurrently, on nickel. This paper presents preliminary results characterizing dislocation loop formation and evolution during room temperatu

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15

Zhang, Yu Juan, and Lei Shang. "Defects in Germanium Nanocrystals Produced by Ion Implantation." Advanced Materials Research 709 (June 2013): 148–52. http://dx.doi.org/10.4028/www.scientific.net/amr.709.148.

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Germanium nanocrystals (Ge-nc) were produced by the implantation of Ge+ into a SiO2 film deposited on (100) Si, followed by a high-temperature annealing. High-resolution transmission electron microscopy (HRTEM) has been used to investigate the defect structures inside the Ge-nc produced by different implantation doses (1×1016, 2×1016, 4×1016 and 8×1016 cm-2). It has been found that the planar defects such as nanotwins and stacking faults (SFs) are dominant in Ge-nc (60%) for the samples with implantation doses higher than 2×1016 cm-2, while for the sample with an implantation dose lower than 1

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16

Lorenz, K., and R. Vianden. "Defect Recovery in AlN and InN after Heavy Ion Implantation." physica status solidi (c), no. 1 (2003): 413–16. http://dx.doi.org/10.1002/pssc.200390076.

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17

Nagano, Masahiro, Hidekazu Tsuchida, Takuma Suzuki, Tetsuo Hatakeyama, Junji Senzaki, and Kenji Fukuda. "Detection and Characterization of Defects Induced by Ion Implantation/Annealing Process in SiC." Materials Science Forum 600-603 (September 2008): 611–14. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.611.

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Defect formation during the ion-implantation/annealing process in 4H-SiC epilayers is investigated by X-ray topography, KOH etching analysis and transmission electron microscopy. Nitrogen and phosphorus ions are implanted in the 4H-SiC epilayers and then activation annealing is performed at 1670 °C. Linearly arrayed or clustered extended defects are found to be formed during the implantation/annealing process by comparing X-ray topography images taken before and after the process. It is confirmed that the defect arrays are formed underneath a shallow groove on the surface and consist of a high

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18

Mitani, Takeshi, Ryo Hattori, and Masanobu Yoshikawa. "Depth Profiling of Al Ion-Implantation Damage in SiC Crystals by Cathodoluminescence Spectroscopy." Materials Science Forum 600-603 (September 2008): 615–18. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.615.

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Cross-sectional CL measurements have been performed on the cleaved surface of the Al-ion implanted 4H-SiC. The strong L1 luminescence that originates from the DI defect has been observed even in the deep region (~10 μm) where implanted ions do not penetrate. In the implanted layer, CL results show that high-density non-radiative defects remain even after activation annealing. Generation of the DI defect in the deep region is presumably attributed to the diffusion of point defects from the implanted layer.

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Kalinina, Evgenia V., M. V. Zamoryanskaya, E. V. Kolesnikova, and Alexander A. Lebedev. "Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions." Materials Science Forum 615-617 (March 2009): 473–76. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.473.

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Structural features of 4H-SiC structures with CVD epitaxial layers, subjected to high-dose Al ion implantation and short high-temperature pulse annealing, have been studied using secondary-ion mass-spectroscopy, transmission electron spectroscopy, local cathodoluminescence and cathodoluminescence imaging on cross-sectionally cleaved surfaces of the structures. An accelerated diffusion of radiation defects, a “long-range action effect”, with a diffusion coefficient of 10 -9 cm2 s-1 after high-dose Al ion implantation and the gettering effect after subsequent pulsed thermal annealing have been o

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20

Posselt, M. "Channeling effects and defect accumulation in ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 90, no. 1-4 (1994): 373–77. http://dx.doi.org/10.1016/0168-583x(94)95574-3.

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21

Lam, Amy C. "Defect distribution of through-Oxide boron-Implanted silicon with and without fluorine incorporation." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (1992): 1394–95. http://dx.doi.org/10.1017/s0424820100131607.

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Material defects generated during device processing can affect the performance of VLSI/ULSI devices. Ion implantation is the most common method of doping in the semiconductor industry. Implantation is usually performed with the wafers oriented 7° off the incident beam direction and through oxide to minimize the channeling effect. In order to obtain shallow p/n junctions for metal-oxide-semiconductor (MOS) devices, implantation of BF2+ molecular ions into silicon has been reported to have advantages over only B+ implantation. With the incorporation of fluorine, suppression of boron diffusion wi

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22

Senawiratne, Jayantha, Jeffery S. Cites, James G. Couillard, Johannes Moll, Carlo A. Kosik Williams, and Patrick G. Whiting. "Boron and Phosphorus Implantation Induced Electrically Active Defects in p-Type Silicon." Solid State Phenomena 156-158 (October 2009): 313–17. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.313.

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Electrically active defects induced by ion implantation of boron and phosphorus into silicon and their recovery under isothermal annealing at 450 °C were investigated using Deep Level Transient Spectroscopy (DLTS) and Energy Resolved Tunneling Photoconductivity (ERTP) spectroscopy at cryogenic temperatures. DLTS results show electrically active deep traps located at Ev+0.35 eV and Ev+0.53 eV in boron implanted Si and at Ev+0.34 eV, Ev+0.43 eV, and Ev+0.38 eV in phosphorus implanted Si. These meta-stable defect sites were found to be either eliminated or significantly reduced in thermally annea

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23

Piluso, Nicolò, Maria Ausilia di Stefano, Simona Lorenti, and Francesco La Via. "4H-SiC Defects Evolution by Thermal Processes." Materials Science Forum 897 (May 2017): 181–84. http://dx.doi.org/10.4028/www.scientific.net/msf.897.181.

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4H-SiC defects evolution after thermal processes has been evaluated. Different annealing temperatures have been used to decrease the defect density of epitaxial layer (as stacking faults) and recover the damage occurred after ion implantation. The propagation of defects has been detected by Photoluminescence tool and monitored during the thermal processes. The results show that implants do not affect the surface roughness and how a preliminary annealing process, before ion implantation step, can be useful in order to reduce the SFs density. It shown the effect of tuned thermal process. A kind

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Duarte Naia, Marco, Paulo M. Gordo, Orlando M. N. D. Teodoro, Adriano P. de Lima, Augusto M. C. Moutinho, and Roberto S. Brusa. "Sub-Surface Defects Induced by Low Energy Ar⁺ Sputtering of Silver." Materials Science Forum 514-516 (May 2006): 1608–12. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.1608.

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Induced defects in silver polycrystalline samples irradiated with 4 keV Ar+ were characterised with slow positron implantation spectroscopy. The implanted gas was found to interact with ion irradiation defects. The evolution of the defects and gas-defect interactions were followed through a multi-step isochronal annealing treatment. Two different defected regions were detected. A region near to the surface, due to a distribution of vacancy-like defects produced by irradiation, and a deeper one due to coalescence of Ar. The deeper defects evolve with thermal treatments and probably produce cavi

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Markevich, Vladimir P., Anthony R. Peaker, L. I. Murin, et al. "Electronic Properties and Thermal Stability of Defects Induced by MeV Electron/Ion Irradiations in Unstrained Germanium and SiGe Alloys." Solid State Phenomena 108-109 (December 2005): 253–60. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.253.

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Deep states produced during γ irradiation of germanium have been compared with the defects produced by 1 and 3MeV silicon ion implantation. The deep states have been studied using DLTS and Laplace DLTS techniques. Isochronal annealing has been used to investigate the defect evolution and stability over the range 100 to 500°C. It is found that while irradiation damage can be removed with a very low thermal budget, the implantation damage is more complex and much more difficult to remove. By comparing low (1010cm-2) and high (1012cm-2) implantation doses it appears that both the complexity and s

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Nagano, Masahiro, Hidekazu Tsuchida, Takuma Suzuki, Tetsuo Hatakeyama, Junji Senzaki, and Kenji Fukuda. "Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing." Materials Science Forum 615-617 (March 2009): 477–80. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.477.

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Defect formation during the ion implantation/annealing process in 4H-SiC epilayers is investigated by synchrotron reflection X-ray topography. The 4H-SiC epilayers are subjected to an activation annealing process after Aluminum ions being implanted in the epilayers. The formation modes of extended defects induced by the implantation/annealing process are classified into the migration of preexisting dislocations and the generation of new dislocations/stacking faults. The migration of preexisting basal plane dislocations (BPDs) takes place corresponding to the ion implantation interface or the e

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Tsubouchi, Nobuteru, M. Ogura, H. Watanabe, Akiyoshi Chayahara, and Hideyo Okushi. "Diamond Doped by Hot Ion Implantation." Materials Science Forum 600-603 (September 2008): 1353–56. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1353.

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Multiple P or S hot ion implantation to diamond substrates was performed at 800°C. Optical absorption spectra indicated that instantaneous annealing during hot ion implantation occurs. Temperature dependence of resistance demonstrated that a P as-implanted sample using a homoepitaxial diamond film substrate emerges a weak doping effect. Also on S implantation, a presence of a weak doping effect was observed in an as-implanted sample, but it was suggested that the dopant is not S itself but S and defect complex. However, post-implantation annealing resulted in high resistance of the samples and

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Wang, Yong, Kun Ren, San Nian Song, and Zhi Tang Song. "Defect Engineering in Antimony Telluride Phase-Change Materials." Materials Science Forum 944 (January 2019): 607–12. http://dx.doi.org/10.4028/www.scientific.net/msf.944.607.

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In the past 20 years, the phase-change memory technology has achieved rapid development, of which alloys along the GeTe-Sb2Te3 pseudobinary line are the most extensively researched materials. In recent years, Sb2Te3-based materials start to attract the attention of researchers. A recent study has shown that the Sb2Te3 (ST) material has a face-centered cubic (Fcc) phase which contains a high concentration of vacancies at low temperature. Due to the poor amorphous thermal stability of ST, the as-deposited film obtained by physical vapor deposition is crystalline (Fcc phase). Therefore, we propos

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Maekawa, Junko, Hitoshi Kawanowa, Masahiko Aoki, Katsumi Takahiro, and Toshiyuki Isshiki. "Defects Characterization of GaN Substrate with Hot Implant Process." Materials Science Forum 1004 (July 2020): 497–504. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.497.

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The defect structure of Mg implanted GaN substrate was evaluated by TEM observations, AFM surface observations and Raman scattering spectroscopic analysis. Mg ions were implanted at room temperature (RT) and 500 °C. TEM results showed that the defect distribution along depth scale is different between RT and 500 °C condition. The several peaks originated from ion implantation were found from Raman scattering spectra and the characteristics of the defects by implantation were discussed. The crystal quality of the sample implanted at 500 °C was found to be better than that of RT by comparing the

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Stach, Eric A., Robert Hull, John C. Bean, Kevin S. Jones, and Ahmed Nejim. "In Situ Studies of the Interaction of Dislocations with Point Defects during Annealing of Ion Implanted Si/SiGe/Si (001) Heterostructures." Microscopy and Microanalysis 4, no. 3 (1998): 294–307. http://dx.doi.org/10.1017/s1431927698980308.

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Strained layer heterostructures provide ideal systems with which to study the dynamics of dislocation motion via in situ transmission electron microscopy, as the geometry, strain state, and kinetics can be characterized and directly controlled. We discuss how these structures are used to study dislocation-point defect interactions, emphasizing the experimental requirements necessary for quantification of dislocation motion. Following ion implantation, different concentrations and types of point defects are introduced within the SiGe epilayer depending on the implantation species, energy, and c

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Comins, J. D., A. T. Davidson, and T. E. Derry. "Defect Production in Alkali Halide Crystals by Ion Implantation." Defect and Diffusion Forum 57-58 (January 1988): 409–24. http://dx.doi.org/10.4028/www.scientific.net/ddf.57-58.409.

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Nitta, N., M. Taniwaki, Y. Hayashi, and T. Yoshiie. "Cellular structure formed by ion-implantation-induced point defect." Physica B: Condensed Matter 376-377 (April 2006): 881–85. http://dx.doi.org/10.1016/j.physb.2005.12.220.

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Jahn, S. G., H. Hofsäss, U. Wahl, S. Winter, and E. Recknagel. "Structural defect recovery in GaP after heavy ion implantation." Applied Surface Science 50, no. 1-4 (1991): 169–72. http://dx.doi.org/10.1016/0169-4332(91)90158-g.

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Prucnal, S., A. Wójtowicz, K. Pyszniak, et al. "Defect engineering in the MOSLED structure by ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267, no. 8-9 (2009): 1311–13. http://dx.doi.org/10.1016/j.nimb.2009.01.163.

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Ro, Jae-Sang, and Nam-Hoon Cho. "Defect interaction by dual MeV ion implantation in silicon." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 187, no. 2 (2002): 215–19. http://dx.doi.org/10.1016/s0168-583x(01)00938-7.

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Afonso, C. N., C. Ortiz, and G. J. Clark. "Defect Formation in LiF by Low Energy Ion Implantation." physica status solidi (b) 131, no. 1 (1985): 87–96. http://dx.doi.org/10.1002/pssb.2221310107.

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Berti, M., G. Mazzi, L. Calcagnile, A. V. Drigo, P. G. Merli, and A. Migliori. "Composition and structure of Si–Ge layers produced by ion implantation and laser melting." Journal of Materials Research 6, no. 10 (1991): 2120–26. http://dx.doi.org/10.1557/jmr.1991.2120.

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Si samples (001) oriented have been implanted with 101774Ge/cm2 (17.7 at. % maximum Ge concentration) and then pulse annealed with either ruby or excimer (XeCl) lasers in the energy density range from 0.1 to 1.5 J/cm2. Compositional and structural characterization has been performed showing that for both laser wavelengths the final product of the annealing process is a single crystal characterized by a surface layer about 150 nm thick whose composition is Si0.9Ge0.1. While after ruby laser irradiations defects are present even in the fully recrystallized samples, after XeCl irradiations good s

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Sakaguchi, Isao, Tsubasa Nakagawa, Kenji Matsumoto, et al. "Redistributing Unintentional Defects Induced by Heavy Ion Implantation in ZnO Ceramics." Key Engineering Materials 421-422 (December 2009): 201–4. http://dx.doi.org/10.4028/www.scientific.net/kem.421-422.201.

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The relationship between the defect structure and luminescence property of ZnO ceramics implanted with Ar of 2×1015 – 60×1015 ions/cm2 was studied. After annealing, the heavy dose-implanted sample (Ar ≥ 30×1015 ions/cm2) was characterized by a luminescence peak at the 730-nm wavelength. Defects in the implanted region formed voids during post-annealing. Oxygen tracer experiments indicated that grain boundary diffusion in the implanted region was enhanced significantly.

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Соболев, Н. А., А. Е. Калядин, К. В. Карабешкин та ін. "Дефектная структура слоев GaAs, имплантированных ионами азота". Письма в журнал технической физики 44, № 18 (2018): 24. http://dx.doi.org/10.21883/pjtf.2018.18.46608.17148.

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AbstractStructural defects formed in epitaxial GaAs layers as a result of 250-keV N^+ ion implantation to doses within 5 × 10^14–5 × 10^16 cm^–2 have been studied by the X-ray diffraction (XRD) and transmission electron microscopy techniques. No amorphization of the ion-implanted layer took place in the entire dose range studied. The implantation to doses of 5 × 10^14 and 5 × 10^15 cm^–2 led to the appearance of an additional peak on XRD curves, which was related to the formation of a stressed GaAs layer with positive deformation arising due to the formation of point-defect clusters. The impla

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Shigenaka, Naoto, Shigeki Ono, Tsuneyuki Hashimoto, Motomasa Fuse, and Nobuo Owada. "Ion implantation of silicon wafers for defect-reduced doped layer formation with low dopant atom diffusion." Journal of Materials Research 9, no. 11 (1994): 2987–92. http://dx.doi.org/10.1557/jmr.1994.2987.

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A new process for ion implantation into silicon wafers was proposed. This process has an additional implantation step to form an amorphous phase. At first self-ions are implanted into a cooled wafer (< −30 °C) to form the amorphous phase, and subsequently dopant atoms are implanted to form a doped layer within the amorphous layer. After annealing above 650 °C, the silicon wafer is completely recrystallized, and no defects with sizes detectable by TEM are present near the doped layer. There is indeed a defect layer in the wafer; however, it lies along the amorphous/crystal interface that is

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Pastuovic, Željko, Mihail Ionescu, Ettore Vittone, and Ivana Capan. "Accelerator-Based Nuclear Techniques for Processing and Characterization of Oxide Semiconductors for Solar Energy Conversion." Solid State Phenomena 253 (August 2016): 59–142. http://dx.doi.org/10.4028/www.scientific.net/ssp.253.59.

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Accelerator-based nuclear techniques are an important tool for the modification and characterization of surfaces in general, down to a depth of around one micrometer. For oxide semiconductors used in solar energy conversion, the surface plays a critical role in facilitating the use of solar photon energy to obtain hydrogen via spontaneous water oxidation. For such a process, the required surface properties are complex and include specific chemical composition, as well as the defect composition, and both of these characteristics may be augmented using accelerator-based nuclear techniques. The t

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Mitani, Takeshi, Ryo Hattori, and Masanobu Yoshikawa. "Diffusion of Point Defects from Ion Implanted 4H-SiC: Cathodoluminescence Observation." Materials Science Forum 615-617 (March 2009): 481–84. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.481.

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Depth profiles of ion-implantation induced defect centers have been investigated by cross-sectional CL measurements in the energy range from visible to near infrared. CL observation has shown that point defects diffused out from implanted region to ~10 µm depth during activation annealing. Annealing temperature dependence of the depth distribution of CL intensity of these defects has suggested that structural transformation of point defects proceeds as “silicon vacancy (VSi) → carbon vacancy-antisite pair (VC-CSi ; UD2) → antisite pair (CSi-SiC ; DI)”.

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Calcagno, L., M. G. Grimaldi, and P. Musumeci. "Defect annealing in ion implanted silicon carbide." Journal of Materials Research 12, no. 7 (1997): 1727–33. http://dx.doi.org/10.1557/jmr.1997.0238.

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The recovery of lattice damage in ion implanted 6H-SiC single crystals by thermal annealing has been investigated in the temperature range 200–1000 °C by Rutherford backscattering spectrometry-channeling and by optical measurements in the UV-visible wavelength. The damage was produced by implantation at room temperature of 60 keV N+ at fluences between 1014 and 5 × 1015 ions/cm2. At low fluences a partially damaged layer with defects distributed over a depth comparable to the projected ion range was obtained. At higher fluences a continuous amorphous layer was formed. The defect annealing beha

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Uedono, Akira, Shoji Ishibashi, Nagayasu Oshima, and Ryoichi Suzuki. "Vacancy-Type Defects in GaN for Power Devices Probed by Positron Annihilation." Defect and Diffusion Forum 373 (March 2017): 183–88. http://dx.doi.org/10.4028/www.scientific.net/ddf.373.183.

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Native defects and ion-implantation induced defects in GaN were studied by means of positron annihilation. Measurements of Doppler broadening spectra of the annihilation radiation for GaN layers grown on Si substrates showed that optically active vacancy-type defects were formed in the layers. Charge transition of the defects due to electron capture occurred when the layers were irradiated by photons with energy above 2.7 eV. It was found that Ti deposition and subsequent annealing introduced vacancy clusters. We also characterized vacancy-type defects in Mg-implanted GaN. The major defect spe

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SHIJIE, LIU, WANG JIANG, HU ZAOHUEI, XIA ZHONGHUONG, GAO ZHIGIANG, and WANG XUEMEI. "ION CHANNELING AND PIXE STUDIES OF S IMPLANTATION IN GaAs." International Journal of PIXE 02, no. 02 (1992): 151–59. http://dx.doi.org/10.1142/s0129083592000142.

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GaAs (100) crystals were implanted with 100 keV S+ to a dose of 3×1015 cm−2 in a nonchanneling direction at room temperature, and treated with rapid thermal annealing (RTA). He+ Rutherford backscattering and particle-induced X-ray emission in channeling mode in combination with transmission electron microscopy (TEM) were used to study the damage and the lattice location of S atoms. It is revealed that the RTA at 950 °C for 10 sec has resulted in a very good recovery of crystallinity with a few residual defects in the form of dislocation loops, and a very high substitutionality (~90%). The acti

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Tsuchiya, Yuta, Masahiro Kayama, Hirotsugu Nishido, and Yousuke Noumi. "Cathodoluminescence of synthetic zircon implanted by He+ ion." Geochronometria 44, no. 1 (2017): 129–35. http://dx.doi.org/10.1515/geochr-2015-0054.

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Abstract He+ ion implantation at 4.0 MeV, equivalent to energy of α particles from natural radioactive nuclei 238U and 232Th, has been conducted for undoped synthetic zircon. The cathodoluminescence (CL) of implanted samples was measured to clarify the radiation-induced effects. Unimplanted synthetic zircon shows pronounced and multiple blue emission bands between 310 nm and 380 nm, whereas the implanted samples have an intense yellow band at ~550 nm. The blue emission bands can be assigned to intrinsic defect centers formed during crystal growth. The yellow band should be derived from induced

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Son, Woo-Young, Myeong-Cheol Shin, Michael Schweitz, Sang-Kwon Lee, and Sang-Mo Koo. "Al Implantation and Post Annealing Effects in n-Type 4H-SiC." Journal of Nanoelectronics and Optoelectronics 15, no. 7 (2020): 777–82. http://dx.doi.org/10.1166/jno.2020.2818.

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We investigated the post annealing effect of Al implantation in n-type 4H-SiC by using deep level transient spectroscopy (DLTS). The Schottky contacts were deposited on n-type epitaxial layer on 4H-SiC substrates and the effect of Al-implantation on the structures has been examined with and without post-annealing process. n-type epitaxial layer on a 4H-SiC substrate was implanted with Al-ion at an energy of 300 keV and a dose of 1.0 × 1015 cm–2. The effect of annealing has been studied by annealing the structures at 1700 C after ion implantation. DLTS measurements were performed before and aft

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Xu, M., and X. Q. Feng. "Defect nucleation in SOI wafers due to hydrogen ion implantation." Theoretical and Applied Fracture Mechanics 42, no. 3 (2004): 295–301. http://dx.doi.org/10.1016/j.tafmec.2004.09.004.

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Bianconi, M., G. G. Bentini, M. Chiarini, et al. "Defect engineering and micromachining of Lithium Niobate by ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267, no. 17 (2009): 2839–45. http://dx.doi.org/10.1016/j.nimb.2009.06.105.

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Pensl, G., F. Ciobanu, T. Frank, et al. "Defect-engineering in SiC by ion implantation and electron irradiation." Microelectronic Engineering 83, no. 1 (2006): 146–49. http://dx.doi.org/10.1016/j.mee.2005.10.040.

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