Academic literature on the topic 'Ion lithography'

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Journal articles on the topic "Ion lithography"

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Basu, Prithvi, Jyoti Verma, Vishnuram Abhinav, Ratneshwar Kumar Ratnesh, Yogesh Kumar Singla, and Vibhor Kumar. "Advancements in Lithography Techniques and Emerging Molecular Strategies for Nanostructure Fabrication." International Journal of Molecular Sciences 26, no. 7 (2025): 3027. https://doi.org/10.3390/ijms26073027.

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Lithography is crucial to semiconductor manufacturing, enabling the production of smaller, more powerful electronic devices. This review explores the evolution, principles, and advancements of key lithography techniques, including extreme ultraviolet (EUV) lithography, electron beam lithography (EBL), X-ray lithography (XRL), ion beam lithography (IBL), and nanoimprint lithography (NIL). Each method is analyzed based on its working principles, resolution, resist materials, and applications. EUV lithography, with sub-10 nm resolution, is vital for extending Moore’s Law, leveraging high-NA optic
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Voznyuk G. V., Grigorenko I. N., Mitrofanov M. I., Nikolaev V. V., and Evtikhiev V. P. "Subwave textured surfaces for the radiation coupling from the waveguide." Technical Physics Letters 48, no. 3 (2022): 76. http://dx.doi.org/10.21883/tpl.2022.03.52896.19103.

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The paper presents a procedure for creating on GaAs(100) substrates textured surfaces by ion-beam etching with a focused beam. The possibility of flexibly controlling the shape and profile of the formed submicron elements of textured media is shown; this will later allow formation of textured surfaces of almost any complexity for realizing the surface radiation coupling from the waveguide. Original lithographic masks were developed, and 3D lithography was accomplished. The obtained lithographic patterns were controlled by the methods of optical, electron and atomic force microscopy. Keywords:
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Tsarik, K. A. "Focused Ion Beam Exposure of Ultrathin Electron-Beam Resist for Nanoscale Field-Effect Transistor Contacts Formation." Proceedings of Universities. Electronics 26, no. 5 (2021): 353–62. http://dx.doi.org/10.24151/1561-5405-2021-26-5-353-362.

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The lithographic methods are used to form contacts for nanostructures smaller than 100 nm , in part, e-beam lithography and focused ion beam lithography with the use of electron-sensitive resist. Focused ion beam lithography is characterized by greater susceptibility to resist, high value of backward scattering, proximity effect, and best ratio of speed performance and contrast to exposed elements’ minimal size, compared to e-beam lithography. In this work, a method of ultrathin resist exposure by focused ion beam is developed. Electron-sensitive resist thickness dependence on increase of its
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WATT, F., A. A. BETTIOL, J. A. VAN KAN, E. J. TEO, and M. B. H. BREESE. "ION BEAM LITHOGRAPHY AND NANOFABRICATION: A REVIEW." International Journal of Nanoscience 04, no. 03 (2005): 269–86. http://dx.doi.org/10.1142/s0219581x05003139.

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To overcome the diffraction constraints of traditional optical lithography, the next generation lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron or ion beam technologies to produce sub-100 nm features. Perhaps the most under-developed and under-rated is the utilization of ions for lithographic purposes. All three ion beam techniques, FIB (Focused Ion Beam), Proton Beam Writing (p-beam writing) and Ion Projection Lithography (IPL) have now breached the technologically difficult 100 nm barrier, and are now capable of fabricating structures at the na
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GAMO, Kenji. "Ion beam lithography." Journal of the Japan Society for Precision Engineering 53, no. 11 (1987): 1677–81. http://dx.doi.org/10.2493/jjspe.53.1677.

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Puttaraksa, Nitipon, Mari Napari, Orapin Chienthavorn, et al. "Direct Writing of Channels for Microfluidics in Silica by MeV Ion Beam Lithography." Advanced Materials Research 254 (May 2011): 132–35. http://dx.doi.org/10.4028/www.scientific.net/amr.254.132.

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The lithographic exposure characteristic of amorphous silica (SiO2) was investigated for 6.8 MeV16O3+ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO2in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.
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Sharma, Ekta, Reena Rathi, Jaya Misharwal, et al. "Evolution in Lithography Techniques: Microlithography to Nanolithography." Nanomaterials 12, no. 16 (2022): 2754. http://dx.doi.org/10.3390/nano12162754.

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In this era, electronic devices such as mobile phones, computers, laptops, sensors, and many more have become a necessity in healthcare, for a pleasant lifestyle, and for carrying out tasks quickly and easily. Different types of temperature sensors, biosensors, photosensors, etc., have been developed to meet the necessities of people. All these devices have chips inside them fabricated using diodes, transistors, logic gates, and ICs. The patterning of the substrate which is used for the further development of these devices is done with the help of a technique known as lithography. In the prese
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Tejeda, R. O., E. G. Lovell, and R. L. Engelstad. "In-Plane Gravity Loading of a Circular Membrane." Journal of Applied Mechanics 67, no. 4 (2000): 837–39. http://dx.doi.org/10.1115/1.1308581.

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This paper develops the displacement field for a circular membrane which is statically loaded by gravity acting in its plane. Coupled to the displacements are the stress and strain distributions. The solution is applicable to the modeling of next generation lithographic masks, ion-beam projection lithography masks in particular. [S0021-8936(00)00803-5]
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Huh, J. S. "Focused ion beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 9, no. 1 (1991): 173. http://dx.doi.org/10.1116/1.585282.

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Löschner, H. "Projection ion beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 6 (1993): 2409. http://dx.doi.org/10.1116/1.586996.

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Dissertations / Theses on the topic "Ion lithography"

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Heard, P. J. "Applications of scanning ion beam lithography." Thesis, University of Cambridge, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.372653.

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Alves, Andrew David Charles, and aalves@unimelb edu au. "Characterisation of Single Ion Tracks for use in Ion Beam Lithography." RMIT University. Applied Sciences, 2008. http://adt.lib.rmit.edu.au/adt/public/adt-VIT20080414.135656.

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To investigate the ultimate resolution in ion beam lithography (IBL) the resist material poly(methyl methacrylate) PMMA has been modified by single ion impacts. The latent damage tracks have been etched prior to imaging and characterisation. The interest in IBL comes from a unique advantage over more traditional electron beam or optical lithography. An ion with energy of the order of 1 MeV per nucleon evenly deposits its energy over a long range in a straight latent damage path. This gives IBL the ability to create high aspect ratio structures with a resolution in the order of 10 nm. Precise i
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Winston, Donald Ph D. Massachusetts Institute of Technology. "Sub-10-nm lithography with light-ion beams." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/71495.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2012.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 203-212).<br>Scanning-electron-beam lithography (SEBL) is the workhorse of nanoscale lithography in part because of the high brightness of the Schottky source of electrons, but also benefiting from decades of incremental innovation and engineering of apparatus around the Schottky source. Light ions are an attractive intermediary between electrons and heavy ions in terms of exposure efficiency and
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Puretz, Joseph. "A theoretical and experimental study of liquid metal ion sources and their application to focused ion beam technology /." Full text open access at:, 1988. http://content.ohsu.edu/u?/etd,182.

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Lindeberg, Mikael. "High aspect ratio microsystem fabrication by ion track lithography." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2003. http://publications.uu.se/theses/91-554-5515-8/.

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Yasaka, Anto. "Feasibility study of spatial-phase-locked focused-ion-beam lithography." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/32663.

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Tucker, Thomas Marshall. "Three dimensional measurement data analysis in stereolithography rapid prototyping." Thesis, Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/17082.

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Sager, Benay. "A method for understanding and predicting stereolithography resolution." Thesis, Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/17832.

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Cybart, Shane A. "Planar Josephson junctions and arrays by electron beam lithography and ion damage." Diss., Connected to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2005. http://wwwlib.umi.com/cr/ucsd/fullcit?p3190007.

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Thesis (Ph. D.)--University of California, San Diego, 2005.<br>Title from first page of PDF file (viewed March 8, 2006). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references (p. 108-111).
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Vaseashta, Ashok K. "Photonic studies of defects and amorphization in ion beam damaged GaAs surfaces." Diss., This resource online, 1990. http://scholar.lib.vt.edu/theses/available/etd-08082007-170507/.

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Books on the topic "Ion lithography"

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J, Resnick Douglas, and Society of Photo-optical Instrumentation Engineers., eds. Electron-beam, X-ray, and ion-beam technology: Submicrometer lithographies IX : 7-8 March 1990, San Jose, California. SPIE--the International Society for Optical Engineering, 1990.

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D, Blais Phillip, and International Society for Hybrid Microelectronics., eds. Electron-beam, X-ray, & ion-beam techniques for submicrometer lithographies V: 11-12 March, 1986, Santa Clara, California. SPIE--the International Society for Optical Engineering, 1986.

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1946-, Peckerar Martin Charles, and Society of Photo-optical Instrumentation Engineers., eds. Electon-beam, X-ray, and ion-beam submicrometer lithographies for manufacturing: 6-7 March 1991, San Jose, California. SPIE, 1991.

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D, Blais Phillip, and Society of Photo-optical Instrumentation Engineers., eds. Electron-beam, x-ray & ion-beam techniques for submicrometer lithographies V: 11-12 March 1986, Santa Clara, California. SPIE--the International Society for Optical Engineering, 1986.

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E, Seeger David, Society of Photo-optical Instrumentation Engineers., Semiconductor Equipment and Materials International., and SEMATECH (Organization), eds. Electron-beam, X-ray, EUV, and ion-beam submicrometer lithographies for manufacturing VI: 11-13 March 1996, Santa Clara, California. SPIE, 1996.

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O, Patterson David, and Society of Photo-optical Instrumentation Engineers., eds. Electron-beam, X-ray, and ion-beam submicrometer lithographies for manufacturing III: 1-2 March 1993, San Jose, California. The Society, 1993.

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Gu, Wenqi. Dian zi shu bao guang wei na jia gong ji shu. Beijing gong ye da xue chu ban she, 2004.

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O, Patterson David, Society of Photo-optical Instrumentation Engineers., and Semiconductor Equipment and Materials International., eds. Electron-beam, X-ray, and ion-beam submicrometer lithographies for manufacturing IV: 28 February-1 March 1994, San Jose, California. SPIE, 1994.

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International Symposium on Electron, Ion, and Photon Beams (2nd 1984 Tarrytown, N.Y.). Proceedings of the 1984 International Symposium on Electron, Ion, and Photon Beams, 29 May-1 June, 1984, Westchester Marriott Hotel, Tarrytown, New York. Edited by Kelly J, American Vacuum Society, and American Institute of Physics. Published for the American Vacuum Society by the American Institute of Physics, 1985.

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Popov, V. K. Raschet i proektirovanie ustroĭstv ėlektronnoĭ i ionnoĭ litografii. "Radio i svi͡a︡zʹ", 1985.

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Book chapters on the topic "Ion lithography"

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Gierak, Jacques. "Focused Ion Beam Direct-Writing." In Lithography. John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118557662.ch4.

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Stengl, Gerhard, Hans Loschner, Ernst Hammel, Edward D. Wolf, and Julius J. Muray. "Ion Projection Lithography." In Emerging Technologies for In Situ Processing. Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-1409-4_12.

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van der Drift, Emile, and Diederik J. Maas. "Helium Ion Lithography." In Nanofabrication. Springer Vienna, 2011. http://dx.doi.org/10.1007/978-3-7091-0424-8_4.

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Stengl, G., H. Löschner, and E. Hammel. "Progress in Ion Projection Lithography." In Physics and Technology of Submicron Structures. Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-83431-8_6.

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Valiev, Kamil A. "The Physics of Ion-Beam Lithography." In The Physics of Submicron Lithography. Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3318-4_4.

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Rangelow, I. W., and P. Hudek. "Lithography and Reactive Ion Etching in Microfabrication." In Photons and Local Probes. Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0423-4_30.

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Zhang, Zhiyu, Ruoqiu Wang, and Donglin Xue. "Microfabrication by Laser Lithography Combined with Ion Etching." In Toxinology. Springer Netherlands, 2018. http://dx.doi.org/10.1007/978-981-10-6588-0_18-1.

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Zhang, Zhiyu, Ruoqiu Wang, and Donglin Xue. "Microfabrication by Laser Lithography Combined with Ion Etching." In Toxinology. Springer Netherlands, 2018. http://dx.doi.org/10.1007/978-981-10-6588-0_18-2.

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Zhang, Zhiyu, Ruoqiu Wang, and Donglin Xue. "Microfabrication by Laser Lithography Combined with Ion Etching." In Micro/Nano Technologies. Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-0098-1_18.

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van Kan, J. A., and K. Ansari. "Box 12: Stamps for Nanoimprint Lithography." In Ion Beams in Nanoscience and Technology. Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-00623-4_26.

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Conference papers on the topic "Ion lithography"

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Kim, Yunsoo, Dongmin Jeong, Seungho Lee, et al. "Improving etchability of challenging materials through the ion implantation process." In International Conference on Extreme Ultraviolet Lithography 2024, edited by Joern-Holger Franke, Kurt G. Ronse, Paolo A. Gargini, Patrick P. Naulleau, and Toshiro Itani. SPIE, 2024. http://dx.doi.org/10.1117/12.3034605.

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Melngailis, John, Hans Loschner, Gerhard Stengl, Ivan L. Berry, Alfred A. Mondelli, and Gerhard Gross. "Ion projection lithography." In Photomask Japan '98 Symposium on Photomask and X-Ray Mask Technology V, edited by Naoaki Aizaki. SPIE, 1998. http://dx.doi.org/10.1117/12.328849.

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Alves, Andrew, Sean M. Hearne, P. Reichart, Reiner Siegele, David N. Jamieson, and Peter N. Johnston. "Ion beam lithography with single ions." In Smart Materials, Nano-, and Micro-Smart Systems, edited by Jung-Chih Chiao, David N. Jamieson, Lorenzo Faraone, and Andrew S. Dzurak. SPIE, 2005. http://dx.doi.org/10.1117/12.582191.

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Lee, Y., K. N. Leung, M. D. Williams, et al. "Multicusp ion source for ion projection lithography." In Proceedings of the 1999 Particle Accelerator Conference (Cat. No.99CH36366). IEEE, 1999. http://dx.doi.org/10.1109/pac.1999.792782.

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Cardinal, Thomas, Daniel Andruczyk, He Yu, Vibhu Jindal, Patrick Kearney, and David N. Ruzic. "Modeling the ion beam target interaction to reduce defects generated by ion beam deposition." In SPIE Advanced Lithography, edited by Patrick P. Naulleau and Obert R. Wood II. SPIE, 2012. http://dx.doi.org/10.1117/12.916878.

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Joy, David C., Brendan J. Griffin, John Notte, et al. "Device metrology with high-performance scanning ion beams." In Advanced Lithography, edited by Chas N. Archie. SPIE, 2007. http://dx.doi.org/10.1117/12.710926.

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Kim, Sang Wan, Peng Zheng, Kimihiko Kato, Leonard Rubin, and Tsu-Jae King Liu. "Enhanced patterning by tilted ion implantation." In SPIE Advanced Lithography, edited by Christopher Bencher and Joy Y. Cheng. SPIE, 2016. http://dx.doi.org/10.1117/12.2218793.

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Maas, Diederik, Emile van Veldhoven, Ping Chen, et al. "Nanofabrication with a helium ion microscope." In SPIE Advanced Lithography, edited by Christopher J. Raymond. SPIE, 2010. http://dx.doi.org/10.1117/12.862438.

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Miller, Paul A. "Image-Projection Ion-Beam Lithography." In 1989 Microlithography Conferences, edited by Arnold W. Yanof. SPIE, 1989. http://dx.doi.org/10.1117/12.968511.

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Martin, Patrick M., Ludovic Godet, Andrew Cheung, et al. "Ion Implant Enabled 2x Lithography." In ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010. AIP, 2011. http://dx.doi.org/10.1063/1.3548339.

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Reports on the topic "Ion lithography"

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Ji, Qing. Maskless, resistless ion beam lithography. Office of Scientific and Technical Information (OSTI), 2003. http://dx.doi.org/10.2172/809301.

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Nelson, C. B., and H. Makowitz. A theoretical study of 30 to 50 angstrom noble gas heavy ion lithography. Office of Scientific and Technical Information (OSTI), 1994. http://dx.doi.org/10.2172/10167534.

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Jiang, Ximan. Resolution Improvement and Pattern Generator Development for theMaskless Micro-Ion-Beam Reduction Lithography System. Office of Scientific and Technical Information (OSTI), 2006. http://dx.doi.org/10.2172/886610.

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Simmons, Blake Alexander, and William P. King. Fundamentals of embossing nanoimprint lithography in polymer substrates. Office of Scientific and Technical Information (OSTI), 2011. http://dx.doi.org/10.2172/1011211.

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Liu, Weidong. Electron Specimen Interaction in Low Voltage Electron Beam Lithography,. Defense Technical Information Center, 1995. http://dx.doi.org/10.21236/ada327202.

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Bedrossian, P. J., and J. C. Farmer. Demonstration of lithographic patterning in measurements of general and localized corrosion on alloy 22. Office of Scientific and Technical Information (OSTI), 1999. http://dx.doi.org/10.2172/14590.

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Three Moments in the Arts of Jamaica. Inter-American Development Bank, 1997. http://dx.doi.org/10.18235/0006433.

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Forty-two paintings, lithographs and sculptures in wood, bronze and stone, that illustrate the 18th century colonial era, early 20th century and the 1960s and '70s; from the National Gallery of Jamaica, the National Library of Jamaica and the private collections of Wallace Campbell and Guy McIntosh.
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L'Estampe en France: Thirty-Four Young Printmakers. Inter-American Development Bank, 1999. http://dx.doi.org/10.18235/0006415.

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Forty-five limited edition prints (primarily etching and engraving, but also lithography, silkscreen, and computer-generated images, among others) by French printmakers under forty years of age. Through the Association Française d¿Action Artistique (AFAA) and L¿Association Les Ateliers, an association of Parisian printmaking workshops, the Center brought contemporary works by master printers whose work represents an extraordinary diversity of vision. The exhibition was organized in honor of Paris, France, site of the 40th Annual Meeting of the IDB Board of Governors in March, 1999, and later i
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Graphics from Latin America and the Caribbean: October 1 - 29, 2000. Inter-American Development Bank, 2000. http://dx.doi.org/10.18235/0005917.

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43 lithographs, etchings, linocuts, woodcuts, silkscreens and other works in various graphic techniques by 40 artists from the Americas were united in this exhibition presented at the art gallery of York College, in York, Pennsylvania, on occasion of the College's 2000-2201 academic year, which is dedicated to the culture of Latin America and the Caribbean. All works belong to the IDB art collection. Artists included Diego Rivera, Roberto Matta, and Carlos Mérida.
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Graphics from Latin America and the Caribbean: January 18th - March 9th, 2002. Inter-American Development Bank, 2002. http://dx.doi.org/10.18235/0005918.

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43 lithographs, etchings, linocuts, woodcuts, silkscreens and other works in various graphic techniques by 40 artists from the Americas were presented at the Riverside Art Museum, Riverside, California. On loan from the IDB Cultural Center; the artistic holdings serve to promote understanding of the cultural heritage of its member countries. Included in the exhibit are graphics by important 20th century Mexican muralists José Clemente Orozco, Diego Rivera, and David Alfaro Siqueiros; the surrealist Roberto Sebastián Matta; Carlos Mérida and others.
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