Log in

Relevant bibliographies by topics / Ion lithography / Journal articles

To see the other types of publications on this topic, follow the link: Ion lithography.

Journal articles on the topic 'Ion lithography'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Ion lithography.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Basu, Prithvi, Jyoti Verma, Vishnuram Abhinav, Ratneshwar Kumar Ratnesh, Yogesh Kumar Singla, and Vibhor Kumar. "Advancements in Lithography Techniques and Emerging Molecular Strategies for Nanostructure Fabrication." International Journal of Molecular Sciences 26, no. 7 (2025): 3027. https://doi.org/10.3390/ijms26073027.

Full text

Abstract:

Lithography is crucial to semiconductor manufacturing, enabling the production of smaller, more powerful electronic devices. This review explores the evolution, principles, and advancements of key lithography techniques, including extreme ultraviolet (EUV) lithography, electron beam lithography (EBL), X-ray lithography (XRL), ion beam lithography (IBL), and nanoimprint lithography (NIL). Each method is analyzed based on its working principles, resolution, resist materials, and applications. EUV lithography, with sub-10 nm resolution, is vital for extending Moore’s Law, leveraging high-NA optic

APA, Harvard, Vancouver, ISO, and other styles

2

Voznyuk G. V., Grigorenko I. N., Mitrofanov M. I., Nikolaev V. V., and Evtikhiev V. P. "Subwave textured surfaces for the radiation coupling from the waveguide." Technical Physics Letters 48, no. 3 (2022): 76. http://dx.doi.org/10.21883/tpl.2022.03.52896.19103.

Full text

Abstract:

The paper presents a procedure for creating on GaAs(100) substrates textured surfaces by ion-beam etching with a focused beam. The possibility of flexibly controlling the shape and profile of the formed submicron elements of textured media is shown; this will later allow formation of textured surfaces of almost any complexity for realizing the surface radiation coupling from the waveguide. Original lithographic masks were developed, and 3D lithography was accomplished. The obtained lithographic patterns were controlled by the methods of optical, electron and atomic force microscopy. Keywords:

APA, Harvard, Vancouver, ISO, and other styles

3

Tsarik, K. A. "Focused Ion Beam Exposure of Ultrathin Electron-Beam Resist for Nanoscale Field-Effect Transistor Contacts Formation." Proceedings of Universities. Electronics 26, no. 5 (2021): 353–62. http://dx.doi.org/10.24151/1561-5405-2021-26-5-353-362.

Full text

Abstract:

The lithographic methods are used to form contacts for nanostructures smaller than 100 nm , in part, e-beam lithography and focused ion beam lithography with the use of electron-sensitive resist. Focused ion beam lithography is characterized by greater susceptibility to resist, high value of backward scattering, proximity effect, and best ratio of speed performance and contrast to exposed elements’ minimal size, compared to e-beam lithography. In this work, a method of ultrathin resist exposure by focused ion beam is developed. Electron-sensitive resist thickness dependence on increase of its

APA, Harvard, Vancouver, ISO, and other styles

4

WATT, F., A. A. BETTIOL, J. A. VAN KAN, E. J. TEO, and M. B. H. BREESE. "ION BEAM LITHOGRAPHY AND NANOFABRICATION: A REVIEW." International Journal of Nanoscience 04, no. 03 (2005): 269–86. http://dx.doi.org/10.1142/s0219581x05003139.

Full text

Abstract:

To overcome the diffraction constraints of traditional optical lithography, the next generation lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron or ion beam technologies to produce sub-100 nm features. Perhaps the most under-developed and under-rated is the utilization of ions for lithographic purposes. All three ion beam techniques, FIB (Focused Ion Beam), Proton Beam Writing (p-beam writing) and Ion Projection Lithography (IPL) have now breached the technologically difficult 100 nm barrier, and are now capable of fabricating structures at the na

APA, Harvard, Vancouver, ISO, and other styles

5

GAMO, Kenji. "Ion beam lithography." Journal of the Japan Society for Precision Engineering 53, no. 11 (1987): 1677–81. http://dx.doi.org/10.2493/jjspe.53.1677.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Puttaraksa, Nitipon, Mari Napari, Orapin Chienthavorn, et al. "Direct Writing of Channels for Microfluidics in Silica by MeV Ion Beam Lithography." Advanced Materials Research 254 (May 2011): 132–35. http://dx.doi.org/10.4028/www.scientific.net/amr.254.132.

Full text

Abstract:

The lithographic exposure characteristic of amorphous silica (SiO2) was investigated for 6.8 MeV16O3+ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO2in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.

APA, Harvard, Vancouver, ISO, and other styles

7

Sharma, Ekta, Reena Rathi, Jaya Misharwal, et al. "Evolution in Lithography Techniques: Microlithography to Nanolithography." Nanomaterials 12, no. 16 (2022): 2754. http://dx.doi.org/10.3390/nano12162754.

Full text

Abstract:

In this era, electronic devices such as mobile phones, computers, laptops, sensors, and many more have become a necessity in healthcare, for a pleasant lifestyle, and for carrying out tasks quickly and easily. Different types of temperature sensors, biosensors, photosensors, etc., have been developed to meet the necessities of people. All these devices have chips inside them fabricated using diodes, transistors, logic gates, and ICs. The patterning of the substrate which is used for the further development of these devices is done with the help of a technique known as lithography. In the prese

APA, Harvard, Vancouver, ISO, and other styles

8

Tejeda, R. O., E. G. Lovell, and R. L. Engelstad. "In-Plane Gravity Loading of a Circular Membrane." Journal of Applied Mechanics 67, no. 4 (2000): 837–39. http://dx.doi.org/10.1115/1.1308581.

Full text

Abstract:

This paper develops the displacement field for a circular membrane which is statically loaded by gravity acting in its plane. Coupled to the displacements are the stress and strain distributions. The solution is applicable to the modeling of next generation lithographic masks, ion-beam projection lithography masks in particular. [S0021-8936(00)00803-5]

APA, Harvard, Vancouver, ISO, and other styles

9

Huh, J. S. "Focused ion beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 9, no. 1 (1991): 173. http://dx.doi.org/10.1116/1.585282.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Löschner, H. "Projection ion beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 6 (1993): 2409. http://dx.doi.org/10.1116/1.586996.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Gamo, Kenji. "Focused ion beam lithography." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 65, no. 1-4 (1992): 40–49. http://dx.doi.org/10.1016/0168-583x(92)95011-f.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Melngailis, John. "Focused ion beam lithography." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 80-81 (January 1993): 1271–80. http://dx.doi.org/10.1016/0168-583x(93)90781-z.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Joshi-Imre, Alexandra, and Sven Bauerdick. "Direct-Write Ion Beam Lithography." Journal of Nanotechnology 2014 (2014): 1–26. http://dx.doi.org/10.1155/2014/170415.

Full text

Abstract:

Patterning with a focused ion beam (FIB) is an extremely versatile fabrication process that can be used to create microscale and nanoscale designs on the surface of practically any solid sample material. Based on the type of ion-sample interaction utilized, FIB-based manufacturing can be both subtractive and additive, even in the same processing step. Indeed, the capability of easily creating three-dimensional patterns and shaping objects by milling and deposition is probably the most recognized feature of ion beam lithography (IBL) and micromachining. However, there exist several other techni

APA, Harvard, Vancouver, ISO, and other styles

14

Mair, G. L. R., and T. Mulvey. "Ion beam lithography (Ion sources and columns)." Microelectronic Engineering 3, no. 1-4 (1985): 133–46. http://dx.doi.org/10.1016/0167-9317(85)90020-6.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Fallica, Roberto. "Beyond grayscale lithography: inherently three-dimensional patterning by Talbot effect." Advanced Optical Technologies 8, no. 3-4 (2019): 233–40. http://dx.doi.org/10.1515/aot-2019-0005.

Full text

Abstract:

Abstract There are a growing number of applications where three-dimensional patterning is needed for the fabrication of micro- and nanostructures. Thus far, grayscale lithography is the main technique for obtaining a thickness gradient in a resist material that is exploited for pattern transfer by anisotropic etch. However, truly three-dimensional structures can only be produced by unconventional lithography methods such as direct laser writing, focused ion beam electrodeposition, colloidal sphere lithography, and tilted multiple-pass projection lithography, but at the cost of remarkable compl

APA, Harvard, Vancouver, ISO, and other styles

16

Вознюк, Г. В., И. Н. Григоренко, М. И. Митрофанов, В. В. Николаев та В. П. Евтихиев. "Субволновые текстурированные поверхности для вывода излучения из волновода". Письма в журнал технической физики 48, № 6 (2022): 51. http://dx.doi.org/10.21883/pjtf.2022.06.52214.19103.

Full text

Abstract:

A technology for creating textured surfaces by focused-beam ion-beam etching on GaAs (100) substrates is demonstrated. The possibility of flexible control of the shape and profile of the formed submicron elements of textured media is shown. It will make possible to create textured surfaces of almost any complexity for the implementation of surface output of radiation from a waveguide. Original lithographic templates were developed and three-dimensional lithography was carried out. The control of the formed lithographic patterns was carried out by the methods of optical, electron and atomic for

APA, Harvard, Vancouver, ISO, and other styles

17

Miller, Paul A. "Image-projection ion-beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 7, no. 5 (1989): 1053. http://dx.doi.org/10.1116/1.584594.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Lee, Y., R. A. Gough, T. J. King, et al. "Maskless ion beam lithography system." Microelectronic Engineering 46, no. 1-4 (1999): 469–72. http://dx.doi.org/10.1016/s0167-9317(99)00042-8.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Thornell, Greger, Reimar Spohr, Elbert Jan van Veldhuizen, and Klas Hjort. "Micromachining by ion track lithography." Sensors and Actuators A: Physical 73, no. 1-2 (1999): 176–83. http://dx.doi.org/10.1016/s0924-4247(98)00268-4.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Ruchhoeft, Paul, J. C. Wolfe, and Robert Bass. "Ion beam aperture-array lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, no. 6 (2001): 2529. http://dx.doi.org/10.1116/1.1420578.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Winston, Donald, Vitor R. Manfrinato, Samuel M. Nicaise, et al. "Neon Ion Beam Lithography (NIBL)." Nano Letters 11, no. 10 (2011): 4343–47. http://dx.doi.org/10.1021/nl202447n.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Chalupka, A., J. Fegerl, R. Fischer, et al. "Progress in ion projection lithography." Microelectronic Engineering 17, no. 1-4 (1992): 229–40. http://dx.doi.org/10.1016/0167-9317(92)90047-u.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Berndt, M., G. Siegmon, and W. Enge. "Ion lithography on aerosol particles." Journal of Aerosol Science 17, no. 3 (1986): 618–21. http://dx.doi.org/10.1016/0021-8502(86)90172-2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Matsui, Shinji. "Ion species dependence of focused-ion-beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 5, no. 4 (1987): 853. http://dx.doi.org/10.1116/1.583679.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Guharay, S. K. "High-brightness ion source for ion projection lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, no. 6 (1996): 3907. http://dx.doi.org/10.1116/1.588692.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Lee, Y. "Development of ion sources for ion projection lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, no. 6 (1996): 3947. http://dx.doi.org/10.1116/1.588701.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Messina, Troy C., Bernadeta R. Srijanto, Charles Patrick Collier, Ivan I. Kravchenko, and Christopher I. Richards. "Gold Ion Beam Milled Gold Zero-Mode Waveguides." Nanomaterials 12, no. 10 (2022): 1755. http://dx.doi.org/10.3390/nano12101755.

Full text

Abstract:

Zero-mode waveguides (ZMWs) are widely used in single molecule fluorescence microscopy for their enhancement of emitted light and the ability to study samples at physiological concentrations. ZMWs are typically produced using photo or electron beam lithography. We report a new method of ZMW production using focused ion beam (FIB) milling with gold ions. We demonstrate that ion-milled gold ZMWs with 200 nm apertures exhibit similar plasmon-enhanced fluorescence seen with ZMWs fabricated with traditional techniques such as electron beam lithography.

APA, Harvard, Vancouver, ISO, and other styles

28

Xin, Zheng Hang, Chong Wang, Feng Qiu, Rong Fei Wang, Chen Li, and Yu Yang. "Advance in the Fabrication of Ordered Ge/Si Nanostructure Array on Si Patterned Substrate by Nanosphere Lithography." Materials Science Forum 852 (April 2016): 283–92. http://dx.doi.org/10.4028/www.scientific.net/msf.852.283.

Full text

Abstract:

The recent process in the fabrication of the ordered Ge/Si quantum dots (QDs) is reviewed. The fabrication step generally started on the preparation of patterned substrate prepared in advance by using several interesting methods, such as photo lithography, focus ion beam (FIB), reactive ion etching (RIE), and extreme ultraviolet lithography (EUV-IL) et al, which are introduced briefly in this article. Here, we’d like to focus on the detailed process of nanosphere lithography (NSL) which has the advantages of less cost and higher product compared with the referred methods. The ordered Ge nanost

APA, Harvard, Vancouver, ISO, and other styles

29

Stangl, G., F. Rüdenauer, W. Maurer, and W. Fallmann. "Submicron lithography and DUV-master masks made by ion projection lithography." Microelectronic Engineering 3, no. 1-4 (1985): 167–71. http://dx.doi.org/10.1016/0167-9317(85)90024-3.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Domonkos, Mária, Pavel Demo, and Alexander Kromka. "Nanosphere Lithography for Structuring Polycrystalline Diamond Films." Crystals 10, no. 2 (2020): 118. http://dx.doi.org/10.3390/cryst10020118.

Full text

Abstract:

This paper deals with the structuring of polycrystalline diamond thin films using the technique of nanosphere lithography. The presented multistep approaches relied on a spin-coated self-assembled monolayer of polystyrene spheres, which served as a lithographic mask for the further custom nanofabrication steps. Various arrays of diamond nanostructures—close-packed and non-close-packed monolayers over substrates with various levels of surface roughness, noble metal films over nanosphere arrays, ordered arrays of holes, and unordered pores—were created using reactive ion etching, chemical vapour

APA, Harvard, Vancouver, ISO, and other styles

31

Rashid, Sabaa, Jaspreet Walia, Howard Northfield, et al. "Helium ion beam lithography and liftoff." Nano Futures 5, no. 2 (2021): 025003. http://dx.doi.org/10.1088/2399-1984/abfd98.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Adesida, I. "Ion beam lithography at nanometer dimensions." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 3, no. 1 (1985): 45. http://dx.doi.org/10.1116/1.583288.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Gross, G. "Ion projection lithography: Next generation technology?" Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 15, no. 6 (1997): 2136. http://dx.doi.org/10.1116/1.589340.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Melngailis, J. "A review of ion projection lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16, no. 3 (1998): 927. http://dx.doi.org/10.1116/1.590052.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Kaesmaier, Rainer, Hans Löschner, Gerhard Stengl, John C. Wolfe, and Paul Ruchhoeft. "Ion projection lithography: International development program." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17, no. 6 (1999): 3091. http://dx.doi.org/10.1116/1.590960.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Ngo, V. V., W. Barletta, R. Gough, et al. "Maskless micro-ion-beam reduction lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17, no. 6 (1999): 2783. http://dx.doi.org/10.1116/1.591065.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Springham, S. V., T. Osipowicz, J. L. Sanchez, L. H. Gan, and F. Watt. "Micromachining using deep ion beam lithography." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 130, no. 1-4 (1997): 155–59. http://dx.doi.org/10.1016/s0168-583x(97)00275-9.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Schrempel, F., Y. S. Kim, and W. Witthuhn. "Deep ion beam lithography in PMMA." Applied Surface Science 189, no. 1-2 (2002): 102–12. http://dx.doi.org/10.1016/s0169-4332(02)00009-0.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Joshi-Imre, A., L. Ocola, and J. Klingfus. "Direct-write Focused Ion Beam Lithography." Microscopy and Microanalysis 16, S2 (2010): 194–95. http://dx.doi.org/10.1017/s1431927610062872.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Alves, A., P. Reichart, R. Siegele, P. N. Johnston, and D. N. Jamieson. "Ion beam lithography using single ions." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 249, no. 1-2 (2006): 730–33. http://dx.doi.org/10.1016/j.nimb.2006.03.128.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Weiser, Martin. "Ion beam figuring for lithography optics." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267, no. 8-9 (2009): 1390–93. http://dx.doi.org/10.1016/j.nimb.2009.01.051.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

Matsui, Shinji, Yoshikatsu Kojima, and Yukinori Ochiai. "High‐resolution focused ion beam lithography." Applied Physics Letters 53, no. 10 (1988): 868–70. http://dx.doi.org/10.1063/1.100098.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Kim, Young Suk, Wan Hong, Hyung Joo Woo, et al. "Ion Beam Lithography Using Membrane Masks." Japanese Journal of Applied Physics 41, Part 1, No. 6B (2002): 4141–45. http://dx.doi.org/10.1143/jjap.41.4141.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Matsui, Shinji. "High-resolution focused ion beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 9, no. 5 (1991): 2622. http://dx.doi.org/10.1116/1.585660.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Löschner, H. "Ion projection lithography for vacuum microelectronics." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 2 (1993): 487. http://dx.doi.org/10.1116/1.586847.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Brünger, W. H. "Ion projection lithography over wafer topography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 12, no. 6 (1994): 3547. http://dx.doi.org/10.1116/1.587468.

Full text

APA, Harvard, Vancouver, ISO, and other styles

47

Breese, M. B. H., G. W. Grime, F. Watt, and D. Williams. "MeV ion beam lithography of PMMA." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 77, no. 1-4 (1993): 169–74. http://dx.doi.org/10.1016/0168-583x(93)95540-l.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Brown, W. L. "Recent progress in ion beam lithography." Microelectronic Engineering 9, no. 1-4 (1989): 269–76. http://dx.doi.org/10.1016/0167-9317(89)90063-4.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Matsui, Shinji, Yoshikatsu Kojima, Yukinori Ochiai, Toshiyuki Honda, and Katsumi Suzuki. "High-resolution focused ion beam lithography." Microelectronic Engineering 11, no. 1-4 (1990): 427–30. http://dx.doi.org/10.1016/0167-9317(90)90144-i.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

Adesida, Ilesanmi. "Fine line lithography using ion beams." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 7-8 (March 1985): 923–28. http://dx.doi.org/10.1016/0168-583x(85)90496-3.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!