Relevant bibliographies by topics / IR photodetector

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'IR photodetector'

Author: Grafiati
Published: 1 February 2025
Last updated: 25 July 2025

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Journal articles on the topic "IR photodetector"

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Khurelbaatar, Zagarzusem, and Chel Jong Choi. "Graphene/Ge Schottky Junction Based IR Photodetectors." Solid State Phenomena 271 (January 2018): 133–37. http://dx.doi.org/10.4028/www.scientific.net/ssp.271.133.

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Ge p-i-n photodetectors with and without graphene on active area fabricated and investigated the graphene effects on opto-electrical properties of photodetectors. The photodetectors were characterized with respect to their dark, photocurrents and responsivities in the wavelength range between 1530-1630 nm. For a 250 um-diameter device at room temperature, it was found that dark current of p-i-n photodetector with graphene were reduced significantly compared with photodetector without graphene. This improvement is attributed to the passivation of the graphene layers that leads to the efficient
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Boltar, K. O., I. D. Burlakov, N. I. Iakovleva, P. V. Vlasov, and P. S. Lazarev. "Modern Photodetector IR-Modules." Journal of Communications Technology and Electronics 67, no. 9 (2022): 1175–84. http://dx.doi.org/10.1134/s1064226922090030.

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Esman, A. K., V. K. Kuleshov, and G. L. Zykov. "Microcavity array IR photodetector." Quantum Electronics 39, no. 12 (2009): 1165–68. http://dx.doi.org/10.1070/qe2009v039n12abeh014148.

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Tang, Xiaobing, Zhibiao Hao, Lai Wang, et al. "Plasmon-Enhanced Hot-Electron Photodetector Based on Au/GaN-Nanopillar Arrays for Short-Wave-Infrared Detection." Applied Sciences 12, no. 9 (2022): 4277. http://dx.doi.org/10.3390/app12094277.

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The complex device structure and costly preparation process have hindered the development and application of the GaN-based ultraviolet and infrared (UV–IR) dual-color photodetector. In this work, we designed and prepared an Au/GaN-nanopillar-based hot-electron photodetector that can operate in the short-wave infrared range, well below the GaN bandgap energy. A suitable Schottky barrier height was developed for a higher photo-to-dark current ratio by post-etching annealing. The surface plasmons generated by Au/GaN-nanopillar arrays could effectively improve the light absorption efficiency. As a
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Qi, Tao, Yaolun Yu, Yanyan Hu, Kangjie Li, Nan Guo, and Yi Jia. "Single-Walled Carbon Nanotube-Germanium Heterojunction for High-Performance Near-Infrared Photodetector." Nanomaterials 12, no. 8 (2022): 1258. http://dx.doi.org/10.3390/nano12081258.

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In this research, we report on a high-performance near-infrared (near-IR) photodetector based on single-walled carbon nanotube-germanium (SWCNT-Ge) heterojunction by assembling SWCNT films onto n-type Ge substrate with ozone treatment. The ozone doping enhances the conductivity of carbon nanotube films and the formed interfacial oxide layer (GeOx) suppresses the leakage current and carriers’ recombination. The responsivity and detectivity in the near-IR region are estimated to be 362 mA W−1 and 7.22 × 1011 cm Hz1/2 W−1, respectively, which are three times the value of the untreated device. Mor
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Li, Fa Jun, Li Ying Tan, and Yan Ping Zhou. "Design and Analysis InGaAs Near-IR Nanowire Photodetector for High Speed Satellite Laser Communication Application." Applied Mechanics and Materials 556-562 (May 2014): 5163–67. http://dx.doi.org/10.4028/www.scientific.net/amm.556-562.5163.

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InGaAs is direct and narrow bandgap material with ultrahigh electron mobility, and is a promising candidate for optoelectronic device in the near-infrared region. The main objective of this manuscript is to design an InGaAs semiconductor-based photodetectors nanowire infrared photodetector, which would be manipulated in optical response wavelength range at room temperature with high-detective and fast-responsive performances. Considering into account mature technology in laser device and for maximizing 1.55 um optical communication performance, the design of achieved bandwidth is >1 Gbps. A
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Salih, A. A., W. K. Abad, S. A. Fadaam, and B. H. Hussein. "Fabrication of lead oxide nanoparticles by green synthesis method for photovoltaic applications." Digest Journal of Nanomaterials and Biostructures 18, no. 4 (2023): 1225–33. http://dx.doi.org/10.15251/djnb.2023.184.1225.

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PbO NPs have been prepared by green synthesis. The diffraction patterns of α-PbO-NPs are shown by the XRD pattern, and the β-PbO-NPs have proven the tetragonal and orthorhombic structure. PbO has an optical energy gap of 4.2 eV. The FT-IR observed bond at 676 cm-1 attributed to the existence of PbO stretch. Nanoparticals with spherical and semi-spherical shapes are formed, as seen in the SEM image. The average particle size was under 100 nm. Fabrication and characterization of a high performance Ag/PbO/PSi/pSi/Ag heterojunction photodetector. The photodetector's responsivity was 0.7 A/W at 850
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Muñoz, A., J. Meléndez, M. C. Torquemada, et al. "PbSe photodetector arrays for IR sensors." Thin Solid Films 317, no. 1-2 (1998): 425–28. http://dx.doi.org/10.1016/s0040-6090(97)00576-2.

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Basyooni-M. Kabatas, Mohamed A., Shrouk E. Zaki, Khalid Rahmani, Redouane En-nadir та Yasin Ramazan Eker. "Negative Photoconductivity in 2D α-MoO3/Ir Self-Powered Photodetector: Impact of Post-Annealing". Materials 16, № 20 (2023): 6756. http://dx.doi.org/10.3390/ma16206756.

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Surface plasmon technology is regarded as having significant potential for the enhancement of the performance of 2D oxide semiconductors, especially in terms of improving the light absorption of 2D MoO3 photodetectors. An ultrathin MoO3/Ir/SiO2/Si heterojunction Schottky self-powered photodetector is introduced here to showcase positive photoconductivity. In wafer-scale production, the initial un-annealed Mo/2 nm Ir/SiO2/Si sample displays a sheet carrier concentration of 5.76 × 1011/cm², which subsequently increases to 6.74 × 1012/cm² after annealing treatment, showing a negative photoconduct
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Danh, Phan Hoang. "Study of collision sensor application for vehicle with high sensitivity silicon-based metal-semiconductor IR photodetector." GSC Advanced Research and Reviews 14, no. 3 (2023): 173–78. https://doi.org/10.5281/zenodo.7928747.

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In this study used the metal-semiconductor diode as IR photodetector, and through the material, device structural and operation bias selection, high response and fast switching can be achieved. The response can be improved by increasing the doping concentration of the semiconductor material. The doping concentration can be increased by varying the temperature of the semiconductor material, and the device structure can be changed to increase the response speed. The operation bias can be adjusted to produce a higher output signal. The metal-semiconductor diode can be used to detect infrared ligh
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Dissertations / Theses on the topic "IR photodetector"

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Cheak, Seck Fai. "Detecting near-UV and near-IR wavelengths with the FOVEON Image Sensor /." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Dec%5FCheak.pdf.

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Thesis (M.S. in Combat Systems Technology)--Naval Postgraduate School, Dec. 2004.<br>Thesis Advisor(s): Gamani Karunasiri, Richard C. Olsen. Includes bibliographical references (p. 57-60). Also available online.
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Desgué, Eva. "Control of structural and electrical properties of bilayer to multilayer PtSe₂ films grown by molecular beam epitaxy for high-performance optoelectronic devices." Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPASP170.

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Le PtSe₂ est un matériau 2D de la famille des dichalcogénures de métaux de transition (TMDs) qui présente des propriétés intrinsèques exceptionnelles : mobilité des porteurs de charge élevée (200 - 450 cm².(V.s)⁻¹), gap électronique ajustable en fonction du nombre de monocouches (MLs), absorption optique large bande et excellente stabilité à l'air. Ces propriétés sont idéales pour des applications (opto)électroniques. Cependant, la croissance de PtSe₂ de haute qualité cristalline sur un substrat à bas coût et isolant reste un enjeu majeur. Ici, la synthèse de PtSe₂ bicouche à multicouche (&lt;
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Dawei, Jiang. "Electrical and optical characterization of InP nanowire-based photodetectors." Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-25733.

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This thesis deals with electrical and optical characterization  of p+i–n+ nanowire-based photodetectors/solar  cells. I have investigated their I-V performance and found that all of them exhibit a clear rectifying behavior with an ideality factor around 2.2 at 300K.  used Fourier transform infrared spectroscopy to extract their optical properties. From the spectrally resolved photocurrent data, I conclude that the main photocurrent is generated in the i-segment of the nanowire (NW) p-i-n junctions, with negligible  contribution from the substrate.   I also used a C-V technique to investigate t
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Liu, Yining. "Design of an Optical Response System for Characterization of Hyperoped Silicon Photodetectors." University of Dayton / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1461944376.

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Giovane, Laura Marie. "Strain-balanced silicon-germanium materials for near IR photodetection in silicon-based optical interconnects." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/9583.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998.<br>Includes bibliographical references (leaves 129-132).<br>Strain-balanced silicon-germanium superlattices grown on high quality compositionally graded buffers, or virtual substrates. make a complete range of alloy composition and biaxial strain combinations accessible. This structure is a unique way to achieve high quantum efficiency near IR photodetection for silicon-based optical interconnects. The growth of the strain-balanced superlattices by molecular beam epitaxy (MBE) and ultra hig
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Ahmed, Rizwan, and Shahid Abbas. "Electrical and Optical Characteristics of InP Nanowires based p-i-n Photodetectors." Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-13915.

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Photodetectors are a kind of semiconductor devices that convert incoming light to an electrical signal. Photodetectors are classified based on their different structure, fabrication technology, applications and different sensitivity. Infrared photodetectors are widely used in many applications such as night vision, thermal cameras, remote temperature sensing, and medical diagnosis etc.   All detectors have material inside that is sensitive to incoming light. It will absorb the photons and, if the incoming photons have enough energy, electrons will be excited to higher energy levels and if thes
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Yew, Jone-Ye, and 游宗毅. "Fabrication of Amorphous Silicon Germanium Near IR Photodetector." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/36750805553945830401.

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碩士<br>國立清華大學<br>電機工程學系<br>85<br>The purpose of this thesis is to fabricate a-SiGe:H IR detectors. Two mainefforts of this thesis are (1)fabrication of a-SiGe:H films. (2)NIPIN IR photodetectors. In order to reduce the influence of the particulate formation in thepreparation of a-SiGe:H films, high hydrogen dilution ratio which is about93 % and pulse RF power is used for a-SiGe:H films. The particulate formationis decreased by using pulse RF power. The device structure of a-SiGe:H photo
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Lin, Chung-Yi, and 林忠億. "Investigation of ZnSe/Si Metal-Semiconductor-Metal (MSM) Photodetector Using IR Furnace Chemical Vapor Deposition." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/29772847564015235938.

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碩士<br>國立海洋大學<br>電機工程學系<br>87<br>-Abstract- In this experiment, we use the low cost IR-CVD system and two-step growth method to grow ZnSe epilayers on oriented-(111) Si substrate for reducing the lattice mismatch problem between ZnSe and Si. Because of the existence of the lattice constant mismatch within approximately 4.1% between the ZnSe and Si that can introduce high density of threading dislocations, stacking faults and defects resulting in the interface states. We use the optimum ZnSe epilayers on Si to fabricate the devices of MSM photodetector. Further, we have sho
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Huang, Shao-Chang, and 黃紹璋. "A study of Amorphous Silicon Germanium High Speed IR Photodetector fabricated on crystal Si Substrate." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/70649342380411960816.

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碩士<br>國立成功大學<br>電機工程研究所<br>84<br>In this thesis , the amorphous silicon-germanium / crystal silicon heterojunction high-speed IR photodetector was studied in detail. In preparing the samples , the amorphous silicon- germanium alloys were grown on the crystal silicon subtrate by plasma enhanced chemical vapor deposition (PECVD). Both advantages of the low resistivity and high mobility characteristics of crystal silicon and the low temperature preparation processing,high
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Tsai, Chung-Shih, and 蔡崇世. "A Study of the High Optical Gain Amorphous Silicon Germanium Alloy IR Photodetector with Bragg Reflectors." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/83112415266720618917.

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碩士<br>國立成功大學<br>電機工程研究所<br>83<br>In this thesis, an high optical gain amorphous silicon germanium alloy IR photodetector with Bragg reflectors has been developed by plasma enhanced chemical vaporphase deposition( PECVD). By using Bragg reflectors ,we can reabsorb the unabsorbed light to increase absorption efficiency , thus we can increase the optical gain. In addition, the Bragg reflector structure will serve as a barrier to block the outdiffusion of defects from the substrate into the act
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Books on the topic "IR photodetector"

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AG, Siemens. Si photodetectors and IR emitters data book 1994/95. Siemens AG, 1994.

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Book chapters on the topic "IR photodetector"

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Piotrowski, J., and A. Piotrowski. "Room Temperature IR Photodetectors." In Mercury Cadmium Telluride. John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470669464.ch22.

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Kutepov, M. E., T. A. Minasyan, D. A. Zhilin, et al. "Fabrication and Investigation of InSb Thin Films for IR SAW Photodetectors." In Springer Proceedings in Materials. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-45120-2_16.

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Sood, Ashok K., John W. Zeller, Roger E. Welser, et al. "Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications." In Two-dimensional Materials for Photodetector. InTech, 2018. http://dx.doi.org/10.5772/intechopen.71328.

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Perera, A. G. U. "Homo- and Heterojunction Interfacial Workfunction Internal Photo-Emission Detectors from UV to IR." In Advances in Infrared Photodetectors. Elsevier, 2011. http://dx.doi.org/10.1016/b978-0-12-381337-4.00005-x.

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Starikov*, D., C. Boney, R. Pillai, and A. Bensaoula. "Solar-Blind Dual-Band UV/IR Photodetectors Integrated on a Single Chip." In 2007 Cleantech Conference and Trade Show Cleantech 2007. CRC Press, 2019. http://dx.doi.org/10.1201/9780429187469-33.

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Conference papers on the topic "IR photodetector"

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Su, Zih-Chun, Yao-Han Dong, and Ching-Fuh Lin. "The Enhanced mid-IR Responsivity and The Hot Carrier Dynamics in Metal-Silicon Interface." In CLEO: Applications and Technology. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.jth2a.51.

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In this work, we achieved a high-speed (&lt; 10-6 s) and broad-spectrum silicon-based photodetector covering visible to mid-infrared light by enhancing the hot carrier mechanism through localized surface plasmon resonance in nano scaled metal.
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Slapovskaya, Ekaterina, Leonid Mochalov, Mikhail Kudryashov, and Edik Rafailov. "CVD-prepared PbSe films for mid-IR photodetectors with high detectivity." In 2024 24th International Conference on Transparent Optical Networks (ICTON). IEEE, 2024. http://dx.doi.org/10.1109/icton62926.2024.10648010.

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Alam, Md Koushik, Masoumeh Nazari, and Binbin Weng. "Study of a perfectly absorbing PbSe metasurface for mid-IR photodetection." In Photonic and Phononic Properties of Engineered Nanostructures XV, edited by Ali Adibi, Shawn-Yu Lin, and Axel Scherer. SPIE, 2025. https://doi.org/10.1117/12.3045577.

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Edelstein, Shahar, S. R. K. Chaitanya Indukuri, Noa Mazurski, and Uriel Levy. "Waveguide-Coupled Mid-IR Photodetector Based on Interlayer Excitons Absorption in a WS2/HfS2 Heterostructure." In CLEO: Science and Innovations. Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_si.2022.sm3k.8.

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We demonstrate a waveguide-coupled mid-IR photodetector based on interlayer excitons in a WS2/HfS2 heterostructure. We measure broadband photodetection, with responsivity in the order of tens of µA/W with low losses to the waveguide mode.
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Lepikh, Ya I., I. A. Ivanchenko, L. M. Budijanskaja, and V. I. Santonij. "Heterojunction photodetector of IR-radiation." In 2017 International Conference on Information and Telecommunication Technologies and Radio Electronics (UkrMiCo). IEEE, 2017. http://dx.doi.org/10.1109/ukrmico.2017.8095391.

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Djuric, Zoran G., and Jozef Piotrowski. "Electromagnetically carrier depleted IR photodetector." In San Diego, '91, San Diego, CA, edited by Bjorn F. Andresen, Marija Scholl, and Irving J. Spiro. SPIE, 1991. http://dx.doi.org/10.1117/12.48766.

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Biswal, Gyana R., Michael Yakimov, Vadim Tokranov, et al. "Development of voltage-tunable IR photodetector." In Infrared Sensors, Devices, and Applications XIII, edited by Ashok K. Sood, Priyalal Wijewarnasuriya, and Arvind I. D'Souza. SPIE, 2023. http://dx.doi.org/10.1117/12.2677169.

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Karachevtseva, Lyudmila A., and Alexei V. Lyubchenko. "Thermostimulate optimization of CdHgTe IR-photodetector parameters." In International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, edited by Sergey V. Svechnikov and Mikhail Y. Valakh. SPIE, 1995. http://dx.doi.org/10.1117/12.226137.

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Bishnu, Soham Kanti, Sayantika Chowdhury, Pritam Sarkar, et al. "Heart Rate Monitoring system using IR-photodetector sensor." In 2018 IEEE 9th Annual Information Technology, Electronics and Mobile Communication Conference (IEMCON). IEEE, 2018. http://dx.doi.org/10.1109/iemcon.2018.8614884.

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Rostami, A., S. Khosravi, and H. Rasooli Saghai. "A Dual-Band UV and IR Quantum Cascade Photodetector." In Asia Communications and Photonics Conference and Exhibition. OSA, 2011. http://dx.doi.org/10.1364/acp.2011.830816.

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Reports on the topic "IR photodetector"

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Pezzaniti, Larry, Sanjay Krishna, and Payman Zarkesh-Ha. Quantum DOT IR Photodetectors. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada580397.

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Yang, Rui Q. Low Noise Mid-Wavelength IR Photodetectors. Defense Technical Information Center, 2014. http://dx.doi.org/10.21236/ada596425.

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Smith, David J., and Yong-Hang Zhang. Novel Virtual Substrates for Future Generation IR Photodetectors. Defense Technical Information Center, 2014. http://dx.doi.org/10.21236/ada613845.

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Zhang, Yong-Hang. Electrical and Optical Characterization System for IR Photodetectors. Defense Technical Information Center, 2015. http://dx.doi.org/10.21236/ad1014947.

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Zhang, Yong-Hang. Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors. Defense Technical Information Center, 2015. http://dx.doi.org/10.21236/ada622826.

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