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Journal articles on the topic 'IR photodetector'

Author: Grafiati

Published: 1 February 2025

Last updated: 25 July 2025

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1

Khurelbaatar, Zagarzusem, and Chel Jong Choi. "Graphene/Ge Schottky Junction Based IR Photodetectors." Solid State Phenomena 271 (January 2018): 133–37. http://dx.doi.org/10.4028/www.scientific.net/ssp.271.133.

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Ge p-i-n photodetectors with and without graphene on active area fabricated and investigated the graphene effects on opto-electrical properties of photodetectors. The photodetectors were characterized with respect to their dark, photocurrents and responsivities in the wavelength range between 1530-1630 nm. For a 250 um-diameter device at room temperature, it was found that dark current of p-i-n photodetector with graphene were reduced significantly compared with photodetector without graphene. This improvement is attributed to the passivation of the graphene layers that leads to the efficient

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2

Boltar, K. O., I. D. Burlakov, N. I. Iakovleva, P. V. Vlasov, and P. S. Lazarev. "Modern Photodetector IR-Modules." Journal of Communications Technology and Electronics 67, no. 9 (2022): 1175–84. http://dx.doi.org/10.1134/s1064226922090030.

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3

Esman, A. K., V. K. Kuleshov, and G. L. Zykov. "Microcavity array IR photodetector." Quantum Electronics 39, no. 12 (2009): 1165–68. http://dx.doi.org/10.1070/qe2009v039n12abeh014148.

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4

Tang, Xiaobing, Zhibiao Hao, Lai Wang, et al. "Plasmon-Enhanced Hot-Electron Photodetector Based on Au/GaN-Nanopillar Arrays for Short-Wave-Infrared Detection." Applied Sciences 12, no. 9 (2022): 4277. http://dx.doi.org/10.3390/app12094277.

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The complex device structure and costly preparation process have hindered the development and application of the GaN-based ultraviolet and infrared (UV–IR) dual-color photodetector. In this work, we designed and prepared an Au/GaN-nanopillar-based hot-electron photodetector that can operate in the short-wave infrared range, well below the GaN bandgap energy. A suitable Schottky barrier height was developed for a higher photo-to-dark current ratio by post-etching annealing. The surface plasmons generated by Au/GaN-nanopillar arrays could effectively improve the light absorption efficiency. As a

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5

Qi, Tao, Yaolun Yu, Yanyan Hu, Kangjie Li, Nan Guo, and Yi Jia. "Single-Walled Carbon Nanotube-Germanium Heterojunction for High-Performance Near-Infrared Photodetector." Nanomaterials 12, no. 8 (2022): 1258. http://dx.doi.org/10.3390/nano12081258.

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In this research, we report on a high-performance near-infrared (near-IR) photodetector based on single-walled carbon nanotube-germanium (SWCNT-Ge) heterojunction by assembling SWCNT films onto n-type Ge substrate with ozone treatment. The ozone doping enhances the conductivity of carbon nanotube films and the formed interfacial oxide layer (GeOx) suppresses the leakage current and carriers’ recombination. The responsivity and detectivity in the near-IR region are estimated to be 362 mA W−1 and 7.22 × 1011 cm Hz1/2 W−1, respectively, which are three times the value of the untreated device. Mor

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6

Li, Fa Jun, Li Ying Tan, and Yan Ping Zhou. "Design and Analysis InGaAs Near-IR Nanowire Photodetector for High Speed Satellite Laser Communication Application." Applied Mechanics and Materials 556-562 (May 2014): 5163–67. http://dx.doi.org/10.4028/www.scientific.net/amm.556-562.5163.

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InGaAs is direct and narrow bandgap material with ultrahigh electron mobility, and is a promising candidate for optoelectronic device in the near-infrared region. The main objective of this manuscript is to design an InGaAs semiconductor-based photodetectors nanowire infrared photodetector, which would be manipulated in optical response wavelength range at room temperature with high-detective and fast-responsive performances. Considering into account mature technology in laser device and for maximizing 1.55 um optical communication performance, the design of achieved bandwidth is >1 Gbps. A

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7

Salih, A. A., W. K. Abad, S. A. Fadaam, and B. H. Hussein. "Fabrication of lead oxide nanoparticles by green synthesis method for photovoltaic applications." Digest Journal of Nanomaterials and Biostructures 18, no. 4 (2023): 1225–33. http://dx.doi.org/10.15251/djnb.2023.184.1225.

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PbO NPs have been prepared by green synthesis. The diffraction patterns of α-PbO-NPs are shown by the XRD pattern, and the β-PbO-NPs have proven the tetragonal and orthorhombic structure. PbO has an optical energy gap of 4.2 eV. The FT-IR observed bond at 676 cm-1 attributed to the existence of PbO stretch. Nanoparticals with spherical and semi-spherical shapes are formed, as seen in the SEM image. The average particle size was under 100 nm. Fabrication and characterization of a high performance Ag/PbO/PSi/pSi/Ag heterojunction photodetector. The photodetector's responsivity was 0.7 A/W at 850

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8

Muñoz, A., J. Meléndez, M. C. Torquemada, et al. "PbSe photodetector arrays for IR sensors." Thin Solid Films 317, no. 1-2 (1998): 425–28. http://dx.doi.org/10.1016/s0040-6090(97)00576-2.

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9

Basyooni-M. Kabatas, Mohamed A., Shrouk E. Zaki, Khalid Rahmani, Redouane En-nadir та Yasin Ramazan Eker. "Negative Photoconductivity in 2D α-MoO3/Ir Self-Powered Photodetector: Impact of Post-Annealing". Materials 16, № 20 (2023): 6756. http://dx.doi.org/10.3390/ma16206756.

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Surface plasmon technology is regarded as having significant potential for the enhancement of the performance of 2D oxide semiconductors, especially in terms of improving the light absorption of 2D MoO3 photodetectors. An ultrathin MoO3/Ir/SiO2/Si heterojunction Schottky self-powered photodetector is introduced here to showcase positive photoconductivity. In wafer-scale production, the initial un-annealed Mo/2 nm Ir/SiO2/Si sample displays a sheet carrier concentration of 5.76 × 1011/cm², which subsequently increases to 6.74 × 1012/cm² after annealing treatment, showing a negative photoconduct

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10

Danh, Phan Hoang. "Study of collision sensor application for vehicle with high sensitivity silicon-based metal-semiconductor IR photodetector." GSC Advanced Research and Reviews 14, no. 3 (2023): 173–78. https://doi.org/10.5281/zenodo.7928747.

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In this study used the metal-semiconductor diode as IR photodetector, and through the material, device structural and operation bias selection, high response and fast switching can be achieved. The response can be improved by increasing the doping concentration of the semiconductor material. The doping concentration can be increased by varying the temperature of the semiconductor material, and the device structure can be changed to increase the response speed. The operation bias can be adjusted to produce a higher output signal. The metal-semiconductor diode can be used to detect infrared ligh

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11

Lu, Qin, Li Yu, Yan Liu, Jincheng Zhang, Genquan Han, and Yue Hao. "Low-Noise Mid-Infrared Photodetection in BP/h-BN/Graphene van der Waals Heterojunctions." Materials 12, no. 16 (2019): 2532. http://dx.doi.org/10.3390/ma12162532.

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We present a low-noise photodetector based on van der Waals stacked black phosphorus (BP)/boron nitride (h-BN)/graphene tunneling junctions. h-BN acts as a tunneling barrier that significantly blocks dark current fluctuations induced by shallow trap centers in BP. The device provides a high photodetection performance at mid-infrared (mid-IR) wavelengths. While it was found that the photoresponsivity is similar to that in a BP photo-transistor, the noise equivalent power and thus the specific detectivity are nearly two orders of magnitude better. These exemplify an attractive platform for pract

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12

Kamarchuk, A. V., D. A. Bauman, and A. I. Marchenko. "Optimization of the profile and material of wire contacts for an IR photodetector." Journal of Physics: Conference Series 2086, no. 1 (2021): 012085. http://dx.doi.org/10.1088/1742-6596/2086/1/012085.

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Abstract The study is devoted to the influence of the choice of geometry and materials of wire contacts on the reflection coefficient and thermal characteristics of the photodetector and the quality of the device design. The process of diffusion of materials of wire contacts and contact pads on a photodetector crystal is investigated. The studies were carried out on samples that are rather small in size (250x250x400 um). During the experiment, 4 main types of loop geometry were selected (main loop, reverse loop, double reverse loop, long loop). The loops were formed using a gold wire 25 μm in

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13

Elsayed, Asmaa M., Fatemah H. Alkallas, Amira Ben Gouider Trabelsi, et al. "Photodetection Enhancement via Graphene Oxide Deposition on Poly 3-Methyl Aniline." Micromachines 14, no. 3 (2023): 606. http://dx.doi.org/10.3390/mi14030606.

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A graphene oxide (GO)/poly 3-methyl aniline (P3MA) photodetector has been developed for light detection in a broad optical region: UV, Vis, and IR. The 3-methyl aniline was initially synthesized via radical polymerization using an acid medium, i.e., K2S2O8 oxidant. Consequently, the GO/P3MA composite was obtained through the adsorption of GO into the surface of P3MA. The chemical structure and optical properties of the prepared materials have been illustrated via XRD, FTIR, SEM, and TEM analysis. The absorbance measurements demonstrate good optical properties in the UV, Vis, and near-IR region

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14

Danh Phan Hoang. "Study of collision sensor application for vehicle with high sensitivity silicon-based metal-semiconductor IR photodetector." GSC Advanced Research and Reviews 14, no. 3 (2023): 173–78. http://dx.doi.org/10.30574/gscarr.2023.14.3.0090.

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In this study used the metal-semiconductor diode as IR photodetector, and through the material, device structural and operation bias selection, high response and fast switching can be achieved. The response can be improved by increasing the doping concentration of the semiconductor material. The doping concentration can be increased by varying the temperature of the semiconductor material, and the device structure can be changed to increase the response speed. The operation bias can be adjusted to produce a higher output signal. The metal-semiconductor diode can be used to detect infrared ligh

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15

Djuric, Z., and J. Piotrowski. "Room temperature IR photodetector with electromagnetic carrier depletion." Electronics Letters 26, no. 20 (1990): 1689. http://dx.doi.org/10.1049/el:19901080.

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16

Biswal, Gyana, Michael Yakimov, Vadim Tokranov, et al. "Bias-Tunable Quantum Well Infrared Photodetector." Nanomaterials 14, no. 6 (2024): 548. http://dx.doi.org/10.3390/nano14060548.

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With the rapid advancement of Artificial Intelligence-driven object recognition, the development of cognitive tunable imaging sensors has become a critically important field. In this paper, we demonstrate an infrared (IR) sensor with spectral tunability controlled by the applied bias between the long-wave and mid-wave IR spectral regions. The sensor is a Quantum Well Infrared Photodetector (QWIP) containing asymmetrically doped double QWs where the external electric field alters the electron population in the wells and hence spectral responsivity. The design rules are obtained by calculating t

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17

Zagubisalo, P. S., and A. R. Novoselov. "Optimal Design of the Cooled IR Flip-Chip Photodetector." Optoelectronics, Instrumentation and Data Processing 58, no. 2 (2022): 206–14. http://dx.doi.org/10.3103/s875669902202011x.

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18

Qi, Tao, Yaolun Yu, Junku Liu, Yi Jia, and Dazhi Ding. "Enhanced Performance of Single-Walled Carbon Nanotube-Germanium Near-Infrared Photodetector by Doping with Au Nanoparticles." Photonics 9, no. 9 (2022): 615. http://dx.doi.org/10.3390/photonics9090615.

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This paper presents a near-infrared (near-IR) photodetector based on a gold nanoparticles-doped (AuNPs-doped), single-walled carbon nanotube–germanium (SWCNT/Ge) heterojunction. The responsivity, detectivity, and response time of the AuNPs-doped, SWCNT/Ge heterojunction photodetector measured 476 mA W−1 (a 291% improvement), 1.0 × 1012 cm Hz1/2 W−1 (a 208% improvement), and 8 μs, respectively. The mechanism of the enhanced performance originated from the surface modification by gold doping, which effectively improved the work function of the carbon nanotube films and thus increased the barrier

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19

Rajeswaran, Bharathi, Inyalot Jude Tadeo, and Arun M. Umarji. "IR photoresponsive VO2 thin films and electrically assisted transition prepared by single-step chemical vapor deposition." Journal of Materials Chemistry C 8, no. 36 (2020): 12543–50. http://dx.doi.org/10.1039/d0tc02785e.

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20

Krivobok, V. S., A. D. Kondorskiy, D. A. Pashkeev, et al. "A Hybrid Mid-IR Photodetector Based on Semiconductor Quantum Wells." Technical Physics Letters 47, no. 5 (2021): 388–91. http://dx.doi.org/10.1134/s1063785021040210.

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21

Djuric, Z., V. Jovic, M. Matic, and Z. Jaksic. "IR photodetector with exclusion effect and self-filtering n+ layer." Electronics Letters 26, no. 13 (1990): 929. http://dx.doi.org/10.1049/el:19900607.

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22

Aïssa, Brahim, Atef Zekri, and Said Mansour. "Responsivity Improvement of IR Photodetector by Using P3HT:PbS-QDs Nanocomposite." Microscopy and Microanalysis 29, Supplement_1 (2023): 181–82. http://dx.doi.org/10.1093/micmic/ozad067.081.

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23

Yue, Dewu, Ximing Rong, Shun Han, et al. "High Photoresponse Black Phosphorus TFTs Capping with Transparent Hexagonal Boron Nitride." Membranes 11, no. 12 (2021): 952. http://dx.doi.org/10.3390/membranes11120952.

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Black phosphorus (BP), a single elemental two-dimensional (2D) material with a sizable band gap, meets several critical material requirements in the development of future nanoelectronic applications. This work reports the ambipolar characteristics of few-layer BP, induced using 2D transparent hexagonal boron nitride (h-BN) capping. The 2D h-BN capping have several advantages over conventional Al2O3 capping in flexible and transparent 2D device applications. The h-BN capping technique was used to achieve an electron mobility in the BP devices of 73 cm2V−1s−1, thereby demonstrating n-type behavi

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24

Moein, Tania, Darius Gailevičius, Tomas Katkus, et al. "Optically-Thin Broadband Graphene-Membrane Photodetector." Nanomaterials 10, no. 3 (2020): 407. http://dx.doi.org/10.3390/nano10030407.

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A broadband graphene-on-Si3N4-membrane photodetector for the visible-IR spectral range is realised by simple lithography and deposition techniques. Photo-current is produced upon illumination due to presence of the build-in potential between dissimilar metal electrodes on graphene as a result of charge transfer. The sensitivity of the photo-detector is ∼1.1 μA/W when irradiated with 515 and 1030 nm wavelengths; a smaller separation between the metal contacts favors gradient formation of the built-in electric field and increases the efficiency of charge separation. This optically-thin graphene-

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25

Tian, Pin, Libin Tang, Jinzhong Xiang, et al. "Solution processable high-performance infrared organic photodetector by iodine doping." RSC Advances 6, no. 51 (2016): 45166–71. http://dx.doi.org/10.1039/c6ra02773c.

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A high-performance IR OPV detector has been fabricated, 2.7 wt% iodine doping may increase the absorption by 31.3% for the active film thus result in the ∼11 000-fold increase in responsivity for the detector.

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26

Basyooni-M. Kabatas, Mohamed A., Redouane En-nadir, Khalid Rahmani, and Yasin Ramazan Eker. "Positive and Negative Photoconductivity in Ir Nanofilm-Coated MoO3 Bias-Switching Photodetector." Micromachines 14, no. 10 (2023): 1860. http://dx.doi.org/10.3390/mi14101860.

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In this study, we delved into the influence of Ir nanofilm coating thickness on the optical and optoelectronic behavior of ultrathin MoO3 wafer-scale devices. Notably, the 4 nm Ir coating showed a negative Hall voltage and high carrier concentration of 1.524 × 1019 cm−3 with 0.19 nm roughness. Using the Kubelka–Munk model, we found that the bandgap decreased with increasing Ir thickness, consistent with Urbach tail energy suggesting a lower level of disorder. Regarding transient photocurrent behavior, all samples exhibited high stability under both dark and UV conditions. We also observed a po

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27

Umar, Z. A., R. Ahmed, H. Asghar, U. Liaqat, A. Fayyaz, and M. A. Baig. "VO2 thin film based highly responsive and fast VIS/IR photodetector." Materials Chemistry and Physics 290 (October 2022): 126655. http://dx.doi.org/10.1016/j.matchemphys.2022.126655.

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28

Chahrour, Khaled M., Naser M. Ahmed, M. R. Hashim, and Ahmad M. Al-Diabat. "High Responsivity IR Photodetector Based on CuO Nanorod Arrays/AAO Assembly." Procedia Chemistry 19 (2016): 311–18. http://dx.doi.org/10.1016/j.proche.2016.03.016.

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29

Asar, Tarık, and Süleyman Özçelik. "Barrier enhancement of Ge MSM IR photodetector with Ge layer optimization." Superlattices and Microstructures 88 (December 2015): 685–94. http://dx.doi.org/10.1016/j.spmi.2015.10.034.

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30

Farhoomand, Jam, and David L. Sisson. "A 1k-pixel CTIA readout multiplexer for far-IR photodetector arrays." Infrared Physics & Technology 53, no. 6 (2010): 450–56. http://dx.doi.org/10.1016/j.infrared.2010.09.005.

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31

Zhao, Xue, Ge Mu, Xin Tang, and Menglu Chen. "Mid-IR Intraband Photodetectors with Colloidal Quantum Dots." Coatings 12, no. 4 (2022): 467. http://dx.doi.org/10.3390/coatings12040467.

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In this paper, we investigate an intraband mid-infrared photodetector based on HgSe colloidal quantum dots (CQDs). We study the size, absorption spectra, and carrier mobility of HgSe CQDs films. By regulating the time and temperature of the reaction during synthesis, we have achieved the regulation of CQDs size, and the number of electrons doped in conduction band. It is experimentally verified by the field effect transistor measurement that dark current is effectively reduced by a factor of 10 when the 1Se state is doped with two electrons compared with other doping densities. The HgSe CQDs f

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32

Rogalski, Antoni, Małgorzata Kopytko, Weida Hu, and Piotr Martyniuk. "Infrared HOT Photodetectors: Status and Outlook." Sensors 23, no. 17 (2023): 7564. http://dx.doi.org/10.3390/s23177564.

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At the current stage of long-wavelength infrared (LWIR) detector technology development, the only commercially available detectors that operate at room temperature are thermal detectors. However, the efficiency of thermal detectors is modest: they exhibit a slow response time and are not very useful for multispectral detection. On the other hand, in order to reach better performance (higher detectivity, better response speed, and multispectral response), infrared (IR) photon detectors are used, requiring cryogenic cooling. This is a major obstacle to the wider use of IR technology. For this re

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33

Guo, Yinben, Yaogang Li, Qinghong Zhang, and Hongzhi Wang. "Self-powered multifunctional UV and IR photodetector as an artificial electronic eye." Journal of Materials Chemistry C 5, no. 6 (2017): 1436–42. http://dx.doi.org/10.1039/c6tc04771h.

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34

Alkallas, Fatemah H., Asmaa M. Elsayed, Amira Ben Gouider Trabelsi, et al. "Impact of Rolled Graphene Oxide Grown on Polyaniline for Photodetection: Future Challenging Opto-Device." Coatings 13, no. 2 (2023): 437. http://dx.doi.org/10.3390/coatings13020437.

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Rolled graphene oxide (roll-GO) with anew morphological properties than normal graphene is synthesized using modified Hummer. Then, the roll-GO/PANI composite is prepared through the adsorption of roll-GO on the surface of the PANI film, that performed through the oxidative polymerization method. The developed composite displays a small bandgap of 1.9 eV and shows a high optical property extends through a wide optical region from UV to IR regions. The chemical structure and function groups are confirmed using the XRD and FTIR. The roll-GO/PANI composite was investigated as a photodetector. The

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35

Lee, Zhi Yin, and Sha Shiong Ng. "Fabrication and characterization of InN-based metal-semiconductor-metal infrared photodetectors prepared using sol–gel spin coated technique." Functional Materials Letters 14, no. 05 (2021): 2151024. http://dx.doi.org/10.1142/s1793604721510243.

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We report on the growth and characterization of undoped indium nitride (InN) thin films grown on a silicon substrate. The InN thin films were grown on aluminium nitride (AlN) template with gallium nitride (GaN) nucleation layer using a relatively simple and low-cost sol–gel spin coating method. The crystalline structure and optical properties of the deposited films were investigated. X-ray diffraction and Raman results revealed that InN thin films with wurtzite structure were successfully grown. For InN thin film grown on a substrate with the GaN nucleation layer, its strain and dislocation de

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36

Lu, Jianting, Lingjiao Zhang, Churong Ma, et al. "In situ integration of Te/Si 2D/3D heterojunction photodetectors toward UV-vis-IR ultra-broadband photoelectric technologies." Nanoscale 14, no. 16 (2022): 6228–38. http://dx.doi.org/10.1039/d1nr08134a.

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A Te/Si heterojunction photodetector array has been in situ constructed by performing pulsed-laser deposition of a Te nanofilm on a pre-patterned 2-inch SiO2/Si wafer, exhibiting ultra-broadband photosensitivity from ultraviolet to infrared.

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37

Malerba, Mario, Mathieu Jeannin, Stefano Pirotta, et al. "A “Janus” double sided mid-IR photodetector based on a MIM architecture." Applied Physics Letters 119, no. 18 (2021): 181102. http://dx.doi.org/10.1063/5.0065591.

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38

Dolatyari, Mahboubeh, Ali Rostami, Sanjay Mathur, and Axel Klein. "UV/IR Dual-Wavelength Photodetector Design Based on ZnO/PMMA/PbSe Nanocomposites." IEEE Transactions on Nanotechnology 17, no. 3 (2018): 574–81. http://dx.doi.org/10.1109/tnano.2018.2827201.

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Lodari, Mario, Paolo Biagioni, Michele Ortolani, Leonetta Baldassarre, Giovanni Isella, and Monica Bollani. "Plasmon-enhanced Ge-based metal-semiconductor-metal photodetector at near-IR wavelengths." Optics Express 27, no. 15 (2019): 20516. http://dx.doi.org/10.1364/oe.27.020516.

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40

Rostami, Ali, Reza Oliaee Rezayee, Hassan Rasooli Saghai, Reza Yadipour, and Hamed Baghban. "A Dual-Color IR Quantum Cascade Photodetector With Two Output Electrical Signals." IEEE Transactions on Electron Devices 58, no. 1 (2011): 165–72. http://dx.doi.org/10.1109/ted.2010.2082546.

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41

Smoczyński, Dariusz, Krzysztof Czuba, Ewa Papis-Polakowska, et al. "The impact of mesa etching method on IR photodetector current-voltage characteristics." Materials Science in Semiconductor Processing 118 (November 2020): 105219. http://dx.doi.org/10.1016/j.mssp.2020.105219.

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42

Lackner, D., O. J. Pitts, S. Najmi, et al. "Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications." Journal of Crystal Growth 311, no. 14 (2009): 3563–67. http://dx.doi.org/10.1016/j.jcrysgro.2009.04.027.

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43

Fastenau, Joel M., Dmitri Lubyshev, Yueming Qiu, et al. "Sb-based IR photodetector epiwafers on 100mm GaSb substrates manufactured by MBE." Infrared Physics & Technology 59 (July 2013): 158–62. http://dx.doi.org/10.1016/j.infrared.2012.12.033.

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44

Albo, Asaf, Dan Fekete, and Gad Bahir. "Unpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector." physica status solidi (c) 5, no. 6 (2008): 2323–25. http://dx.doi.org/10.1002/pssc.200778741.

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45

Kohlgraf-Owens, Dana C., Sergey Sukhov, Léo Greusard, Yannick De Wilde, and Aristide Dogariu. "Optically induced forces in scanning probe microscopy." Nanophotonics 3, no. 1-2 (2014): 105–16. http://dx.doi.org/10.1515/nanoph-2013-0056.

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AbstractTypical measurements of light in the near-field utilize a photodetector such as a photomultiplier tube or a photodiode, which is placed remotely from the region under test. This kind of detection has many draw-backs including the necessity to detect light in the far-field, the influence of background propagating radiation, the relatively narrowband operation of photodetectors which complicates the operation over a wide wavelength range, and the difficulty in detecting radiation in the far-IR and THz. Here we review an alternative near-field light measurement technique based on the dete

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46

Et.al, DalievKhojiakbarSultanovich. "Increasing the Thermostability of Optoelectronic Devices on Semiconductor Radiators." Turkish Journal of Computer and Mathematics Education (TURCOMAT) 12, no. 3 (2021): 3112–19. http://dx.doi.org/10.17762/turcomat.v12i3.1535.

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The article proposes a scheme for thermal stabilization of the radiation flux of mid-IR LEDs in the temperature range + 20 ° C + 80 ° C. It is shown that the relevance of mid-IR LEDs for solving problems of gas analysis, environmental monitoring, moisture measurement and medical diagnostics. It was revealed that the guarantee of the measurement accuracy and sensitivity of optoelectronic devices is the correct spectral matching of the photodetector, LED and absorption of the investigated substance. The disadvantages of emitting diodes associated with time and temperature instability during oper

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Gak, V. Yu, A. V. Gadomska, M. G. Spirin, et al. "Study of Photoelectrophysical Characteristics of IR Photodetector Based on HgTe Colloidal Quantum Dots." High Energy Chemistry 56, no. 2 (2022): 91–100. http://dx.doi.org/10.1134/s0018143922020035.

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Asanov, S. V., A. B. Ignat’ev, V. V. Morozov, M. S. Egorov, Yu A. Rezunkov, and V. V. Stepanov. "Nonlinearity and persistence of the response of IR photodetector arrays to laser radiation." Journal of Optical Technology 81, no. 9 (2014): 531. http://dx.doi.org/10.1364/jot.81.000531.

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Lotfi, Hossein, Lu Li, S. M. Shazzad Rassel, et al. "Monolithically integrated mid-IR interband cascade laser and photodetector operating at room temperature." Applied Physics Letters 109, no. 15 (2016): 151111. http://dx.doi.org/10.1063/1.4964837.

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Hashemnezhad, Hadi, and Mina Noori. "High responsivity zero-biased Mid-IR graphene photodetector based on chalcogenide glass waveguide." Optics & Laser Technology 181 (February 2025): 111852. http://dx.doi.org/10.1016/j.optlastec.2024.111852.

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