Academic literature on the topic 'Isolant de Bande'
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Journal articles on the topic "Isolant de Bande"
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Murtadha, Murtadha, M. Abduh Ulim, and Syamsuddin Syamsuddin. "Eksplorasi Rizobakteri Indigenous Dan Uji Antagonis Terhadap Patogen Rigidoporus microporus Dan Phellinus noxius Pada Tanaman Karet (Hevea brasiliensis) Secara In Vitro." Jurnal Ilmiah Mahasiswa Pertanian 3, no. 4 (April 4, 2020): 43–52. http://dx.doi.org/10.17969/jimfp.v3i4.9198.
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Abstrak. Penelitian bertujuaan untuk mendapatkan isolat rizobakteri yang mampu berperan sebagai agens biokontrol terhadap pengendalian patogen R. microporus dan P. noxius secara in vitro serta sebagai agen rizobakteri pemacu pertumbuhan tanaman (RPPT). Penelitian dilaksanakan di Laboratorium Ilmu dan Teknologi Benih Jurusan Agroteknologi, Fakultas Pertanian, Universitas Syiah Kuala, Darussalam Banda Aceh, mulai Oktober sampai Desember 2017. Penelitian ini menggunakan Rancangan Acak Lengkap non faktorial. Faktor yang diteliti yaitu isolat rizobakteri, taraf yang dicobakan terdiri dari 15 isolat dan dua patogen antagonis R. microporus dan P. noxius, yang diulang sebanyak 3 kali sehingga terdapat 90 unit satuan percobaan. Hasil penelitian menunujukkan isolat rizobakteri mampu menekan pertumbuhan koloni cendawan patogen. Pada patogen uji R. microporus terdapat 3 rizobakteri yang paling baik yaitu isolat DLG5/3 dengan persentase penghambatan 68,33%, DLG4/1 dengan persentase penghambatan 66,66% dan DLG4/7 dengan persentase penghambatan 63,33%. Pada patogen uji P.noxius terdapat dua rizobakteri yang paling baik dalam menghambat pertumbuhan koloni cendawan patogen yaitu isolat DLG5/1 dengan persentase penghambatan 60,33%, dan DKP6/3 dengan persentase penghambatan 52,50%. Pada laju penghambatan isolat rizobakteri yang paling baik pada patogen R. microporus yaitu isolat DLG6/4 dan DKP4/1 dengan nilai rerata laju penghambatan 20,33 mm/hari. Pada patogen P. noxius menunjukan isolat rizobakteri yang paling baik yaitu isolat DLG4/1 dengan nilai laju penghambatan 12,05 mm/hari.Exploration of Indigenous Rizobacteria and Antagonistic Test against Patogen Rigidoporus microporus And Phellinus noxius In Rubber Plant (Hevea brasiliensis) In VitroAbstract. The research was conducted to obtain rhizobacteria isolates capable of acting as biocontrol agents on pathogen control of R. microporus and P. noxius in vitro and as plant growth promoter rhizobacteria (PGPR). The research was conducted at the Science and Technology of seed Laboratory, Department of Agrotechnology, Faculty of Agriculture, Syiah Kuala University, Darussalam Banda Aceh, starts from October to December 2017. The research using Completely Randomized Design non factorial. Factors researched were rhizobacteria isolates, the experimental stage consisted of 15 isolates and 2 antagonist were R. microporus dan P. noxius, and 3 time repeated until be found 90 units of treatment. The results showed that rhizobacteria isolates capable to inhibith growth of colonies pathogenic. In the pathogen of R. microporus test, there are 3 better rhizobacteria were DLG5/3 isolate with 68.33% inhibition percentage, DLG4/1 with 66.66% inhibition percentage and DLG4/7 with 63,33% inhibition percentage. In the pathogen of P. noxius there are 2 best rhizobacteria inhibiting growth, DLG5/1 isolate with 60.33% inhibition percentage, and DKP6/3 with 52,50% inhibition percentage. In the pathogen of R. microporus test, there are 2 better rhizobacteria were DLG6/4 and DKP4/1 with 20,33 mm/day inhibition percentage. In the pathogen of P. noxius test, the best rhizobacteria were DLG4/1 with 12,05 mm/day inhibition percentage.
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Tilley, Michael, and Steve J. Upton. "Electrophoretic characterization of Cryptosporidium parvum (KSU-1 isolate) (Apicomplexa: Cryptosporidiidae)." Canadian Journal of Zoology 68, no. 7 (July 1, 1990): 1513–19. http://dx.doi.org/10.1139/z90-224.
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Sodium dodecyl sulfate polyacrylamide gel electrophoresis, immunoblotting, lectin binding, and iodine-125 surface labeling of sporozoites were used to probe the coccidial pathogen, Cryptosporidium parvum. Analysis of silver-stained profiles of CsCl gradient purified, freeze–thawed oocysts revealed >50 bands, whereas profiles of anion exchange chromatography purified sporozoites displayed >40 bands. Surface iodination of sporozoites revealed about 20 surface proteins, the most heavily labeled of which had molecular masses of 18–20, 37–39, 48, 73–76, and 102–105 kilodaltons. Following electrophoresis and Western blotting, 4 of 12 different 125I-labeled lectin probes bound to blots and collectively revealed at least 19 bands to be glycosylated. Concanavalin A specifically recognized at least 14 bands, whereas Griffonia simplicifolia agglutinin I, Maclura pomifera agglutinin, and soybean agglutinin recognized 5–7 bands each. Of the five most heavily labeled surface molecules, the four with lowest molecular masses all appeared to be glycosylated. Immunoblotting with sera collected from two individuals 30 days after they passed oocysts revealed that the majority of parasite glycoproteins and surface molecules are immunogenic.
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Praja, Ratih Novita, Didik Handijatno, Setiawan Koesdarto, and Aditya Yudhana. "Karakterisasi Protein VirB4 Brucella abortus Isolat Lokal dengan Teknik Sodium Dodecyl Sulfate Polyacrylamide Gel Electrophoresis." Jurnal Veteriner 18, no. 3 (September 4, 2017): 416. http://dx.doi.org/10.19087/jveteriner.2017.18.3.416.
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Brucellosis is a zoonotic disease cause by pathogenic bacteria of the genus Brucella. The disease infects livestock mammals such as cows, goats, pigs, and including humans. Brucella abortus has several potential virulence factors, i.e. Proteins VirB. Type IV secretion system (T4SS) which is a combination of 12 proteins from VirB1-VirB11 and VirD4. Brucella can survive for long periods in the environment despite the limitations of nutrients and oxygen. This study aims to characterize the protein VirB4 of local isolate of B. abortus using SDS PAGE (Sodium Dodecly sulfate-polyacrylamide gel electrophoresis). The results showed that the protein contained 10 protein bands with a molecular weight of 158.93; 110.89; 99.931; 70.60; 64.61; 59.25; 45.32; 42.35; 23.63; and 16.70 kDa, respectively. Protein VirB4 of the local isolate of B. abortus have a molecular weight of 59.25 kDa.
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Brucellosis merupakan salah satu penyakit zoonosis yang disebabkan oleh bakteri patogen genus Brucella. Penyakit ini menyerang hewan ternak mamalia seperti sapi, kambing, babi, dan dapat menular ke manusia. Bakteri Brucella abortus memiliki faktor virulensi potensial yaitu protein VirB. Type IV Secretion System (T4SS) merupakan gabungan dari 12 protein yaitu VirB1–VirB11 dan VirD4. Brucella dapat bertahan hidup lama di dalam lingkungan meskipun memiliki keterbatasan nutrisi dan oksigen. Penelitian ini dilakukan untuk karakterisasi protein VirB4 B. abortus isolat lokal dengan metode Sodium Dodecly Sulfate-Polyacrylamide Gel Electrophoresis (SDS PAGE). Hasil karakterisasi protein B. abortus isolat lokal dengan teknik SDS-PAGE terdapat 10 pita protein dengan bobot molekul 158,93; 110,89; 99,931; 70,60; 64,61; 59,25; 45,32; 42,35; 23,63; dan 16,70 kDa. Simpulan penelitian ini adalah terdapat protein VirB4 B. abortus isolat lokal yang mempunyai bobot molekul 59,25 kDa.
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Collisson, Ellen W., T. Lynwood Barber, Colleen M. Shannon, and Maurice C. Kemp. "Genotypic Transitions among Bluetongue Viral Isolates from Domestic Ruminants in Colorado during 1981–1984." Journal of Veterinary Diagnostic Investigation 1, no. 3 (July 1989): 242–46. http://dx.doi.org/10.1177/104063878900100309.
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Two predominant electropherotypes of bluetongue virus (BTV) serotype 11 isolates from cattle during a 1981–1984 field study in eastern Colorado were characterized. The genomes of strains isolated from the first 2 years of the study had 1 predominant electropherotype (CO81), with the exception of 1 isolate that differed only in the migration of segment 3. A second electropherotype (CO83), with differences in the migration of 4 segments, coexisted in the same region during 1983 and 1984 with strains having the CO81 RNA profile. The genomes of CO81 and CO83 were also distinguishable from those of the US prototype of BTV 11. Analysis of the polypeptides of representative strains of each electropherotype by sodium dodecyl sulfate-polyacrylamide gel electrophoresis indicated that the proteins were very similar. The occurrence of the CO81 electropherotype was apparently the result of multiple viral infections since the positions of 7 segments had faint second bands and single-banded variants were isolated after serial plaque purifications. In addition, protein 7 of 1 of the CO81 isolates and protein 7 of the single-banded variant differed as shown by reverse phase-high performance liquid chromatography of 35S-methionine-labeled tryptic peptides.
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Jeng, Robert S. "Analytical electrofocusing and two-dimensional electrophoresis of proteins extracted from the mycelia of aggressive and nonaggressive strains of Ophiostoma ulmi." Canadian Journal of Botany 64, no. 9 (September 1, 1986): 2073–81. http://dx.doi.org/10.1139/b86-272.
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Soluble mycelial proteins from Ophiostoma ulmi (Buism.) Nannf., the causal agent of Dutch elm disease, were separated by analytical electrofocusing and two-dimensional electrophoresis in polyacrylamide gels. Results showed the aggressive and nonaggressive strains of this pathogen each had about 60 Coomassie blue stained bands having isoelectric points from 3 to 7. Both strains of this fungus had their own characteristic electrofocusing patterns. Nonaggressive isolate S116, for example, lacked two protein bands, one near the anode and one near the cathode, but it had five additional protein bands distributed from pH 4 to 6. Two-dimensional electrophoresis of total soluble proteins depicted that there were 36 proteins found to be specific for the nonaggressive isolate S116 and 12 proteins for the aggressive isolate RR2.
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Kamel, Ehab Abdel-Razik, and M. Elsayed Rashed. "Electrophoretic Protein Banding Patterns among Penicillium Strains Isolated from Saudi Arabia." International Journal of Applied Sciences and Biotechnology 2, no. 3 (September 25, 2014): 283–90. http://dx.doi.org/10.3126/ijasbt.v2i3.10949.
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14 strains of Penicillium species were isolated from different localities and habitats from Jeddah, Saudi Arabia and cultivated on two different media: Czapek Dox’s medium, in which NaNO3 is the source of inorganic nitrogen, and Waksman’s medium, in which pepton is the source of organic nitrogen. Sodium Dodecyl Sulphate Polyacrylamide Gel Electrophoresis (SDS-PAGE) technique was used in this study to distinguish these isolates. The Penicillium isolates examined in this study consisted of six Penicillium species: Penicillium corylophilum (three isolates), P. rubrum (one isolate), P. citrinum (two isolates), P. crustosum (one isolate), P. canesens (six isolates) and Penicillium sp. (one isolate). The electrophoretic protein patterns from Penicillium isolates grown on Czapek Dox's medium revealed the presence of 17 different bands (out of 14 polymorphic bands, there were three monomorphic bands and two unique bands). The electrophoretic protein pattern of the same isolates grown on Waksman's medium revealed the presence of 12 different bands (out of eight polymorphic bands, there were four monomorphic bands and one unique band). Data were analysed by a clustering method and similarity coefficients using NTSYSpc version 2.02i. Two different phenograms were produced for the studied Penicillium species based on the analysis of the protein banding patterns. Data from the protein banding patterns produced from both media were combined and analysed to produce third phenogram, and the relationships between the species and isolates are discussed. DOI: http://dx.doi.org/10.3126/ijasbt.v2i3.10949Int J Appl Sci Biotechnol, Vol. 2(3): 283-290
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Abe, Niichiro, Kazutoshi Takami, Isao Kimata, and Motohiro Iseki. "Molecular Characterization of a Cryptosporidium Isolate From a Banded Mongoose Mungos mungo." Journal of Parasitology 90, no. 1 (February 2004): 167–71. http://dx.doi.org/10.1645/ge-3231rn.
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Wszolek, B., and W. Godlowski. "Toward an adequate method to isolate spectroscopic families of diffuse interstellar bands." Monthly Notices of the Royal Astronomical Society 338, no. 4 (February 1, 2003): 990–98. http://dx.doi.org/10.1046/j.1365-8711.2003.06143.x.
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Poplawski, Agnieszka M., John A. G. Irwin, and John M. Manners. "Isolation of Genotype- and Chromosome-specific DNA Markers in a Biotype of Colletotrichum gloeosporioides Using Random Amplified Polymorphic DNA Analysis." Australian Journal of Botany 46, no. 1 (1998): 143. http://dx.doi.org/10.1071/bt96131.
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Genetic markers that distinguish fungal genotypes are important tools for genetic analysis of heterokaryosis and parasexual recombination in fungi. Random amplified polymorphic DNA (RAPD) markers that distinguish two races of biotype B of Colletotrichum gloeosporioides infecting the legume Stylosanthes guianensis were sought. Eighty-five arbitrary oligonucleotide primers were used to generate 895 RAPD bands but only two bands were found to be specifically amplified from DNA of the race 3 isolate. These two RAPD bands were used as DNA probes and hybridised only to DNA of the race 3 isolate. Both RAPD bands hybridised to a dispensable 1.2 Mb chromosome of the race 3 isolate. No other genotype-specific chromosomes or DNA sequences were identified in either the race 2 or race 3 isolates. The RAPD markers hybridised to a 2 Mb chromosome in all races of the genetically distinct biotype A pathogen which infects other species of Stylosanthes as well as S. guianensis. The experiments indicate that RAPD analysis is a potentially useful tool for obtaining genotype- and chromosome-specific DNA probes in closely related isolates of one biotype of this fungal pathogen.
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Parvin, N., M. Bilkiss, J. Nahar, MK Siddiqua, and MB Meah. "RAPD analysis of Sclerotium rolfsii isolates causing collar rot of eggplant and tomato." International Journal of Agricultural Research, Innovation and Technology 6, no. 1 (August 12, 2016): 47–57. http://dx.doi.org/10.3329/ijarit.v6i1.29212.
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Eight isolates of Sclerotium rolfsii from four strategically geographical sites of Bangladesh were characterized and their cultural properties like average linear mycelial growth, colony colour, colony consistency, growth pattern and sclerotia formation were studied. Isolates varied in mycelial growth and other growth characteristics and were grouped into three. The highest linear growth was displayed by S8. DNA concentration of eight isolates varied from 1150-7200 ng/?l. DNA fingerprinting by RAPD prompted the grouping of isolates. Selected 3 primers generated 20 bands with size ranging from 100-1500 bp. Out of the 20 bands, 9 bands (45%) were polymorphic and 11 bands (55%) were monomorphic among the eight isolates of Sclerotium rolfsii. The co-efficient of gene differentiation (Gst) was 1.000 reflecting the existence of high level of genetic variations among the 8 isolates. The lowest genetic distance and highest inter isolate similarity was found in S1 and S2 which would be homogeneous. The highest genetic distance and lowest inter isolate similarity found in S3, S7 and S3, S8 pair which would be most divergent isolates. The cluster analysis also revealed that S3, S7 and S8 belong to different clusters. All five varieties of eggplant and tomatoes were graded as susceptible when inoculated with eight isolates. Plant mortality 93.33% was recorded in S4, S6 and in S8. Considering the isolate factor the most virulent isolate would be S8 whereas the less virulent isolate would be S2 and S7. Host plant of S8 was tomato collected from Thakurgaon. S2 and S7 were collected from BAU farm and Dinajpur and host plants were lentil and tomato respectively. It is evident that Sclerotium rolfsii from Thakurgaon on host tomato is more virulent.Int. J. Agril. Res. Innov. & Tech. 6 (1): 47-57, June, 2016
Dissertations / Theses on the topic "Isolant de Bande"
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Nájera, Ocampo Oscar. "Study of the dimer Hubbard Model within Dynamical Mean Field Theory and its application to VO₂." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLS462/document.
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J'étudie en détail la solution d'un modèle simplifié d'électrons fortement corrélés, à savoir le modèle de Hubbard dimérisé. Ce modèle est la réalisation la plus simple d'un problème de cluster DMFT. Je fournis une description détaillée des solutions dans une région de coexistence où l'on trouve deux états (méta) stables des équations DMFT, l'un métallique et l'autre isolant. De plus, je décris en détail comment ces états disparaissent à leurs lignes critiques respectives. Je clarifie le rôle clé joué par la corrélation intra-dimère, qui agit ici en complément des corrélations de Coulomb.Je passe en revue la question importante du passage continue entre unisolant Mott et un isolant Peierls où je caractérise une variété de régimes physiques. Dans un subtil changement de la structure électronique, lesbandes de Hubbard évoluent des bandes purement incohérentes (Mott) à desbandes purement cohérentes (Peierls) à travers un état inattendu au caractère mixte. Je trouve une température d'appariement singulet T* en-dessous de laquelle les électrons localisés à chaque site atomique peuvent se lier dans un singulet et minimiser leur entropie. Ceci constitue un nouveau paradigme d'un isolant de Mott paramagnétique.Enfin, je discute la pertinence de mes résultats pour l'interprétation de différentes études expérimentales sur VO₂. Je présente plusieurs arguments qui me permettent d'avancer la conclusion que la phase métallique, à vie longue (métastable) induite dans les expériences pompe-sonde, et l'état métallique métastable M₁, thermiquement activé dans des nano-domaines, sont identiques. De plus, ils peuvent tous être qualitativement décrits, dans le cadre de notre modèle, par un métal corrélé dimériséWe study in detail the solution of a basic strongly correlated model,namely, the dimer Hubbard model. This model is the simplest realization ofa cluster DMFT problem.We provide a detailed description of the solutions in the ``coexistentregion'' where two (meta)stable states of the DMFT equations are found, onea metal and the other an insulator. Moreover, we describe in detail howthese states break down at their respective critical lines. We clarify thekey role played by the intra-dimer correlation, which here acts in additionto the onsite Coulomb correlations.We review the important issue of the Mott-Peierls insulator crossoverwhere we characterize a variety of physical regimes. In a subtle change inthe electronic structure the Hubbard bands evolve from purely incoherent(Mott) to purely coherent (Peierls) through a state with unexpected mixedcharacter. We find a singlet pairing temperature T* below which thelocalized electrons at each atomic site can bind into a singlet and quenchtheir entropy, this uncovers a new paradigm of a para-magnetic Mottinsulator.Finally, we discuss the relevance of our results for the interpretation ofvarious experimental studies in VO₂. We present a variety of argumentsthat allow us to advance the conclusion that the long-lived (meta-stable)metallic phase, induced in pump-probe experiments, and the thermallyactivated M₁ meta-stable metallic state in nano-domains are the same.In fact, they may all be qualitatively described by the dimerizedcorrelated metal state of our model
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Gianesello, Frédéric. "Evaluation de la technologie CMOS SOI haute résistivité pour application RF jusqu'en bande millimétrique." Université Joseph Fourier (Grenoble), 2006. http://www.theses.fr/2006GRE10149.
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Les transmissions sans fi] n'ont cessé de prendre un essor considérable, que ce soit pour les applications spatiales, les radiocommunications mobiles ou les communications à courtes portées. Depuis quelques années, avec la montée en fréquence des composants, la technologie Silicium est présente dans. Le domaine des radiofréquences et des hyperfréquences. Les circuits intégrés micro-ondes nécessitent des composants actifs performants pour des conditions de faibJe polarisation. Mais il apparaît également essentiel de proposer dans le même temps des composants passifs performants afin de pouvoir intégrer toutes les fonctions RF nécessaires Ce dernier point représente le principal écueil auquel les technologies silicium ce sont heurtées de part la nécessité d'utiliser des substrats à pertes afin de pouvoir gérer les probJèmes de « latch up ». Dans cette thèse, nous évaluerons les potentialités RF et millimétriques offertes par les technologies SOI de part leur compatibilité avec des substrats Hautement Résistifs (HR). Après avoir introduit le contexte général de l'étude nous investiguerons les performances offertes par les composants passif intégrés en technologie SOI HR. Ces composants seront alors utilisés dans le cadre de la réalisation de circuits passifs afin de valider ces composants développés et leurs modèles. Nous nous intéresserons alors à l'évolution des performances en bruit du transistor MaS. Nous conclurons en présentant des réalisations d'amplificateurs faible bruit afin de pouvoir effectuer une comparaison entre technologie SOI et silicium standard afin de dégager les potentialités millimétriques offertes par les technologies SOI HRThe wireless transmissions increase in a spectacular way, such as in the spatial applications, the mobile communication systems or the short range communications. Since few years, with the work frequency growth ofthe Silicon components, the Silicon technology is present in the radio and high frequency fields. The microwave integrated circuits need high performance components with low bias conditions. But it appears also essential to offer in the same time high performance passive components in order to be able to integrate an necessary RF functions. This Jast point remains the main limitation faced by standard silicon technologies, since they have to use lossy substrate (mainly to be able to manage "Jatch up" issue). Ln this thesis, we wiIJ evaluate RF and minimeter wave potentialities offered by SOI technologies due to their compatibility with High Resistivity substrate. After having introduced the general context of this study we win investigate the performances offered by passive components integrated on HR SOI, while trying to propose dedicated èomponents which could take the best advantage ofhigh resistivity. These components win then be used within the achievement of passive circuits in order to validate those deveJoped components and their mode!. We wiIJ focus then on the evolution of the performances in noise of MaS transistor. Finany, we end up this manuscript by presenting achievements of Low Noise Amplifiers in order to fun fin a benchmarking between HR SOI and standard silicon technology in order to discuss the millimeter wave potentialities open by HR sa!
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MAUVIGNER-BEHAR, NATHALIE. "Etude du phosphure d'indium semi-isolant pour la realisation de diodes laser a grande bande passante et forte puissance." Paris 6, 1991. http://www.theses.fr/1991PA066233.
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Les systemes de communication par fibres optiques a haut debit et grande distance requierent des diodes laser possedant intrinsequement une tres grande bande passante et une forte puissance. Le laser a ruban enterre en gainasp/inp offre de bonnes performances, qui sont toutefois limitees par des elements parasites rc propres a la structure. Le travail presente consiste en l'etude, tant du point de vue materiau que du point de vue electrique, de couches semi-isolantes permettant la localisation de l'injection du courant dans la zone active du laser et la reduction du facteur rc. Deux methodes sont envisagees. Ce sont: la desactivation des accepteurs dans l'inp par l'hydrogene et le dopage par un piege profond: le fer. La desactivation des dopants p dans l'inp d'une heterostructure gainas/inp est obtenue pendant la phase de refroidissement de l'epitaxie m. O. C. V. D. L'influence des parametres: temperature, hydrures utilises, nature de la conductivite (n ou p). . . Est montree. L'originalite de l'etude reside dans la mise en evidence de l'influence de la couche de gainas sur la desactivation et la restauration des accepteurs dans l'inp d'une heterostructure gainas/inp. Elle aboutit a la realisation d'un laser avec couches bloquantes en inp:p hydrogene. La croissance par epitaxie m. O. C. V. D. D'inp:fe permet l'obtention d'un materiau de resistivite elevee (10#8 cm) mesuree sur des structures n-si-n, jusqu'a une tension superieure a 10 v. Dans le cas de structures p-si-n, plusieurs problemes sont identifiees: une tension de claquage, mesuree en direct, faible (<1 v), une exodiffusion du fer en presence de zinc. Compte tenu des problemes souleves par la presence d'une couche d'inp:zn adjacente a une couche d'inp:fe, une structure optimisee d'un laser avec couches bloquantes en inp:fe est proposee
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Braccioli, Marco. "Étude des transistors MOS silicium-sur-isolant à grilles multiples tenant en compte de l'ingénierie de la bande interdite et des effets d'auto-échauffement." Grenoble INPG, 2009. http://www.theses.fr/2009INPG0051.
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Le travail est focalisé sur la simulation de différentes structures SOI. La première partie du manuscrit concerne la simulation Monte Carlo de transistors SOI double grille avec hétérojonctions entre source/drain et canal. Les simulations ont montré un compromis entre le gain en courant obtenu grâce à une plus grande vitesse des porteurs, et la perte causée par un mauvais contrôle électrostatique. La deuxième partie étude les effets d’ auto-échauffement des transistors SOI en utilisant simulations 3D électro-thermiques. L’auto-échauffement se développe différemment entre différentes structures: la chaleur produite peut être dissipée soit par les contacts, à travers la direction verticale ou entre transistors adjacents. Ensuite on a etudié dispositifs FinFET avec une longueur de grille de 30nm. L’auto-échauffement a été etudié en fonction des paramètres technologiquesThis work focuses on the simulation of differents SOI structures. The first part manuscript is about the Monte Carlo simulation of double-gate SOI transistors featuring heterojunctions between the source/drain and the channel. The simulations pointed out a compromise between the gain in terms of provided current obtained by a larger carrier injection velocity, and the detrimental impact due to a bad electrostatic control. The second part concerns the self-heating effects of transistors fabricated in SOI technology, by simulations performed with a commercial tool. Electro-thermal simulations pointed out that self-heating originates by different ways between the different considered structures, because heat generated in the active region can be dissipated both through the contacts, the vertical direction and between adjacent devices. This paths are different for single - or double - gate transistors, of FinFETs. Then, attention has been focused on simulations of FinFET devices, featuring a gate length equal to 30 nm. Self-heating has been studied as a function of different technological parameters : source and drain extension length, buried oxied thickness, distance between adjacent fins, fin height
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Boussaha, Mohamed Faouzi. "Développement d'un démonstrateur de récepteur hétérodyne submillimétrique ultra-large bande à base de jonctions Supraconducteur-Isolant-Supraconducteur (SIS), refroidi à 4,2 K." Paris 6, 2003. http://www.theses.fr/2003PA066368.
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Bouynet, Enmmanuelle. "Propriétés diélectriques large bande de matériaux à basse température : application à l'étude de composés de la famille des fullerènes et de composites isolant-polymère conducteur." Bordeaux 1, 1996. http://www.theses.fr/1996BOR10690.
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La premiere partie de la these consiste a realiser l'etude sur une large bande de frequence (100 mhz 5 ghz) d'une sonde coaxiale a effet de bout en effectuant son etalonnage et en etudiant les differentes limitations de la methode. Cette technique de caracterisation dielectrique a ensuite ete adaptee a la realisation de mesures a basse temperature dans un cryostat a helium liquide. Dans la seconde partie, le comportement en frequence et en temperature de plusieurs types d'echantillons est etudie: des fullerenes (c#6#0 et c#7#0), un echantillon supraconducteur a base de nanoparticules de carbone, et enfin des composites polystyrene/polypyrrole
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Boutayeb, Mohammed Saad. "Architecture et conception d’un amplificateur de puissance large-bande pour des applications 4G/5G." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALT055.
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Avec l’arrivée de la 5G NR, les architectures des émetteurs-récepteurs des terminaux mobiles doivent intégrer plus de composants (filtres, amplificateurs de puissance…) afin d’adresser des bandes plus nombreuses et plus larges (notamment les bandes « sub-6 GHz ») en plus de traiter des signaux plus complexes. Ces nouvelles contraintes d’encombrement et de performances auxquelles doivent répondre les émetteurs-récepteurs ont un impact direct sur les spécifications techniques des amplificateurs de puissance (PA). D’une part il est nécessaire d’avoir des PA qui adressent des bandes plus larges afin de réduire le nombre de composants dans la chaîne d’émission ; d’autre part, ces PA doivent répondre aux critères de linéarité des nouveaux standards (LTE-A et 5G NR) tout en assurant une bonne efficacité énergétique de fonctionnement. Les travaux de cette thèse portent sur l’investigation d’architectures avancées de PA alliant largeur de bande, linéarité et efficacité énergétique.Le contexte et les motivations de la thèse énoncés, le choix de la technologie RF SOI 130nm et les contraintes auxquels doit répondre le PA sont justifiés. Une étude de l’état de l’art des architectures avancées (à efficacité améliorée) de PA permet de retenir l’architecture Doherty comme solution intéressante. Une étude théorique de l’architecture Doherty est effectuée afin de modéliser son fonctionnement, d’identifier l’impact des paramètres de dimensionnement et des capacités parasites du transistor sur les performances de celle-ci avant d’explorer les perspectives qu’elle présente en termes de largeur de bande. Un premier circuit démonstrateur a été implémenté en RF SOI 130nm. Il s’agit d’un étage amplificateur Doherty couvrant la bande 3,2-3,6 GHz. Pour un signal LTE 10MHz 50RB à une puissance de sortie de 27dBm, un ACLR maximal de -30,5 dBc et une PAE minimale de 36% a été mesurée sur toute la bande. Un deuxième circuit Doherty intégrant un étage de pré-amplification (driver) a été implémenté dans la même technologie. Les mesures pour un signal LTE 10MHz 12RB à 28 dBm de puissance de sortie donnent un ACLR maximal de -35 dBc et une PAE minimale de 32% sur toute la bande 3,2-3,8 GHz ce qui permet de couvrir les bandes B42, B43 et B49The arrival of the 5G NR put more constraints on the transceivers architectures. They must integrate more components (filters, power amplifiers, etc.) in order to address more numerous and wider bands (in particular the “sub-6 GHz” bands) in addition to processing more complex signals. These new space and performance constraints that transceivers must meet have a direct impact on the technical specifications of power amplifiers (PAs). On the one hand it is necessary to have PAs which address wider bands in order to reduce the number of components in the emission chain; on the other hand, these PAs must meet the criteria of linearity of the new standards (LTE-A and 5G NR) while ensuring good operating energy efficiency. The work of this thesis concerns the investigation of advanced PA architectures combining bandwidth, linearity and energy efficiency.The context and the motivations of the thesis stated, the choice of SOI 130nm RF technology and the constraints to which the PA must respond are justified. A study of the state of the art of improved efficiency PAs architectures makes it possible to select Doherty architecture as an interesting solution. A theoretical study of the Doherty architecture is carried out in order to model its operation, to identify the impact of the dimensioning parameters and the parasitic capacitances of the transistor on the performances before exploring the bandwidth perspectives it presents. A first demonstrator circuit was implemented in RF SOI 130nm. It is a Doherty amplifier stage covering the 3.2-3.6 GHz band. For an LTE 10MHz 50RB signal at an output power of 27dBm, a maximum ACLR of -30.5 dBc and a minimum PAE of 36% was measured across the band. A second Doherty circuit integrating a driver stage has been implemented in the same technology. Measurements for an LTE 10MHz 12RB signal at 28 dBm of output power give a maximum ACLR of -35 dBc and a minimum PAE of 32% over the whole band 3.2-3.8 GHz which allows to cover the B42, B43 and B49 bands
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Martineau, Baudouin. "Potentialités de la technologie CMOS 65nm SOI pour des applications sans fils en bande millimétrique." Phd thesis, Université des Sciences et Technologie de Lille - Lille I, 2008. http://tel.archives-ouvertes.fr/tel-00288865.
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Dans le cadre des nouvelles applications dans la bande de fréquence millimétrique, une évaluation de la technologie CMOS 65nm SOI pour la conception de circuits est proposée. Cette évaluation s'articule autour de deux axes principaux. Tout d'abord les composants actifs et passifs spécifiques à la technologie font l'objet d'une étude en terme de performances et de modélisations. Ensuite la technologie est évaluée au travers l'exemple de circuits composant une chaîne de réception
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Emam, Mostafa. "Wide band and noise characterization of various MOSFETS for optimized use in RF circuits." Thesis, Lille 1, 2010. http://www.theses.fr/2010LIL10165/document.
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Sans fils, portable, et performance sont devenus les mots-clés dans les marchés des électroniques et télécommunications. Ces mots clés sont très exigeants aux niveaux des conceptions de circuits et de la technologie. En effet, la conception de circuit n’est plus loin de la technologie. Le passage de micro- au nano-électronique a été accompagné par des améliorations révolutionnaires dans la modélisation de composant. Afin de répondre aux défis des applications avancées, il est indispensable que le model s’approche de la physique du composant, au contraire du cas précédent où des modèles empiriques étaient utilisés. Le concepteur de circuit est donc obligé de bien comprendre la physique du composant. Une recherche approfondie est fortement demandé dans cette zone peu servie entre la conception de circuit et la caractérisation conventionnelle des composants.Dans ce contexte, cette thèse est dévoué à établir le lien entre la caractérisation des composants d’un côté et la conception de circuit de l’autre côté, en particulier pour les applications haute fréquence. Cela est atteint en appliquant une recherche élaborée de différentes structures des transistors. Des technologies différentes sont aussi considérées comme les technologies bulk, SOI partiellement- et complètement- déserté. Sur base d’un cycle complet de recherche (en commençant par le layout jusqu’aux mesures sous pointes), une comparaison détaillé des tous les transistors (en terme des performances de dc, ac, RF, non-linaires, bruit RF, faible tension faible puissance et haute température) est présentée afin de fournir le concepteur de circuit RF avec un ensemble d’information suffisant pour une conception réussiteWireless, portable, and performance are becoming the keywords for both the consumer electronics and the telecommunication markets. These key requirements are very demanding on the circuit design and on the technology levels. In fact, the circuit design is no more separated from the technology. The passage from micro- to nano-electronics was accompanied by significant revolutionary enhancements and modifications of device modeling. In order to meet the new challenges of advanced applications, it is indispensable for the device model to approach from the device physics, as opposed to the empirical models known earlier. This leads, de facto, to a more complicated device model. As a result, a good circuit designer should coercively comprehend the device physics. A profound research is indeed compulsory in this gray area between the circuit design and the device characterization conventional areas.In this context, the work of this PhD thesis is devoted to provide the link between the device engineering/characterization domain and the circuit design domain, pronouncedly for RF applications. This is achieved through an elaborated research of already existing transistor structures (floating-body and body-tied) as well as new structures (graded channel). Different technologies such as bulk, partially- and fully-depleted SOI are also considered. Based on a complete flow (design of layout to on-wafer measurements), a detailed comparison of all transistors (in terms of dc, ac, RF, non-linear, RF noise, low voltage low power, and high temperature performances) is presented in order to render the RF circuit designer with adequate information for a successful RF product
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Liu, Fanyu. "Caractérisation électrique et modélisation du transport dans matériaux et dispositifs SOI avancés." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT034/document.
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Cette thèse est consacrée à la caractérisation et la modélisation du transport électronique dans des matériaux et dispositifs SOI avancés pour la microélectronique. Tous les matériaux innovants étudiés(ex: SOI fortement dopé, plaques obtenues par collage etc.) et les dispositifs SOI sont des solutions possibles aux défis technologiques liés à la réduction de taille et à l'intégration. Dans ce contexte,l'extraction des paramètres électriques clés, comme la mobilité, la tension de seuil et les courants de fuite est importante. Tout d'abord, la caractérisation classique pseudo-MOSFET a été étendue aux plaques SOI fortement dopées et un modèle adapté pour l'extraction de paramètres a été proposé. Nous avons également développé une méthode électrique pour estimer la qualité de l'interface de collage pour des plaquettes métalliques. Nous avons montré l'effet bipolaire parasite dans des MOSFET SOI totalement désertés. Il est induit par l’effet tunnel bande-à-bande et peut être entièrement supprimé par une polarisation arrière. Sur cette base, une nouvelle méthode a été développée pour extraire le gain bipolaire. Enfin, nous avons étudié l'effet de couplage dans le FinFET SOI double grille, en mode d’inversion. Un modèle analytique a été proposé et a été ensuite adapté aux FinFETs sans jonction(junctionless). Nous avons mis au point un modèle compact pour le profil des porteurs et des techniques d’extraction de paramètresThis thesis is dedicated to the electrical characterization and transport modeling in advanced SOImaterials and devices for ultimate micro-nano-electronics. SOI technology is an efficient solution tothe technical challenges facing further downscaling and integration. Our goal was to developappropriate characterization methods and determine the key parameters. Firstly, the conventionalpseudo-MOSFET characterization was extended to heavily-doped SOI wafers and an adapted modelfor parameters extraction was proposed. We developed a nondestructive electrical method to estimatethe quality of bonding interface in metal-bonded wafers for 3D integration. In ultra-thin fully-depletedSOI MOSFETs, we evidenced the parasitic bipolar effect induced by band-to-band tunneling, andproposed new methods to extract the bipolar gain. We investigated multiple-gate transistors byfocusing on the coupling effect in inversion-mode vertical double-gate SOI FinFETs. An analyticalmodel was proposed and subsequently adapted to the full depletion region of junctionless SOI FinFETs.We also proposed a compact model of carrier profile and adequate parameter extraction techniques forjunctionless nanowires
Conference papers on the topic "Isolant de Bande"
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Ikuta, Yasuhiro, Kenta Taniguchi, Kenta Obata, Masayuki Matsuoka, and Hiroki Yoshioka. "Influences of band-correlated noise on FVC by VI-isoline based LMM: characteristic behavior of propagated error." In SPIE Asia-Pacific Remote Sensing, edited by Dara Entekhabi, Yoshiaki Honda, Haruo Sawada, Jiancheng Shi, and Taikan Oki. SPIE, 2012. http://dx.doi.org/10.1117/12.977328.
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Taniguchi, Kenta, Kenta Obata, Masayuki Matsuoka, and Hiroki Yoshioka. "Inter-sensor relationship of two-band spectral vegetation index based on soil isoline equation: derivation and numerical validation." In SPIE Optical Engineering + Applications, edited by Wei Gao, Thomas J. Jackson, Jinnian Wang, and Ni-Bin Chang. SPIE, 2013. http://dx.doi.org/10.1117/12.2023883.
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Okuda, Kakuya, Kenta Taniguchi, Munenori Miura, Kenta Obata, and Hiroki Yoshioka. "Application of vegetation isoline equations for simultaneous retrieval of leaf area index and leaf chlorophyll content using reflectance of red edge band." In SPIE Optical Engineering + Applications, edited by Wei Gao and Ni-Bin Chang. SPIE, 2016. http://dx.doi.org/10.1117/12.2236811.
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Martinez-Botas, R. F., G. D. Lock, and T. V. Jones. "Heat Transfer Measurements in an Annular Cascade of Transonic Gas Turbine Blades Using the Transient Liquid Crystal Technique." In ASME 1994 International Gas Turbine and Aeroengine Congress and Exposition. American Society of Mechanical Engineers, 1994. http://dx.doi.org/10.1115/94-gt-172.
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Heat transfer measurements have been made in the Oxford University Cold Heat Transfer Tunnel employing the transient liquid crystal technique. Complete contours of the heat transfer coefficient have been obtained on the aerofoil surfaces of a large annular cascade of high pressure nozzle guide vanes (mean blade diameter of 1.11 m and axial chord of 0.0664 m). The measurements are made at engine representative Mach and Reynolds numbers (exit Mach number 0.96 and Reynolds number 2.0 × 106). A novel mechanism is used to isolate five preheated blades in the annulus before an unheated flow of air passes over the vanes, creating a step change in heat transfer. The surfaces of interest are coated with narrow-band thermochromic liquid crystals and the colour crystal change is recorded during the run with a miniature CCD video camera. The heat transfer coefficient is obtained by solving the one dimensional heat transfer equation for all the points of interest. This paper will describe the experimental technique and present results of heat transfer and flow visualisation.
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Ameyaw, Daniel A., Sandra Rothe, and Dirk Söffker. "Probability of Detection (POD)-Oriented View to Fault Diagnosis for Reliability Assessment of FDI Approaches." In ASME 2018 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/detc2018-85554.
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Reliability assessment of Structural Health Monitoring systems applied to the diagnosis of faults in elastic structures is discussed in this contribution. In the field of Non Destructive Testing (NDT), Probability of Detection (POD) is used as a performance measure for quantifying the reliability of NDT approaches. However, reliability measures applied to Fault Detection and Isolation (FDI) is not discussed much in this research area. In this contribution the reliability of vibration-based monitoring approaches with respect to their principal ability to detect changes, realize diagnosis, and isolate causes (as FDI) is discussed. Using eigenfrequency and band power as attributes, a novel feature-based POD is proposed and implemented as a reliability measure for vibration-based FDI. The a90/95 criteria which represents 90% probability of detecting a fault with 95% level of confidence is successfully implemented to an experimentally realized monitoring system. Emphases is made on improving the detection quality through sensor/information fusion. Acceleration, strain, and deflection measurement paths are utilized for diagnosis purposes based on experimental results.
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Papadopoulos, Christos I., and Ioannis T. Georgiou. "Structure-Excitation Modal Decoupling by Modification of the Involved Acoustic Modes of the Sound Insulating Enclosure." In ASME 2001 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/detc2001/vib-21412.
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Abstract Several noise sources such as machinery with rotating or reciprocating parts routinely produce high levels of noise in narrow frequency ranges lying in the neighbourhood of the rotating or reciprocating frequency and their harmonics. When enclosures are used to isolate such noise sources, peak response might be observed at these frequency ranges due both to increased excitation amplitude and resonating phenomena caused by the interaction of the excitation with the acoustic modes of the enclosure. Especially in the low frequency range and for low or intermediate wall absorption, the acoustic response of the enclosure is modal and these peak responses can be intense. This paper proposes a methodology to minimize the effect of narrow-frequency-band noise by redistribution of the acoustic modes of the insulating enclosure. This can be achieved by shifting the enclosure acoustic modes away from the excitation frequency so as to make superimposed resonating phenomena less intense. For that, several variable geometric modifications of the enclosure walls are introduced. The magnitude of those modifications that will lead to sparse mode distribution in the neighbourhood of the excitation frequency is estimated by means of a combined finite element-optimisation method. The above methodology is applied to an orthogonal enclosure and two different narrow-band loads in the neighbourhood of 90 and 120 Hz are studied. It is shown that, for each frequency load, a feasible set of geometric modifications can be found so as for the neighbouring modes to be shifted and, consecutively, for resonating effects to be made less intense. Furthermore it is shown that feasible solution to the problem of simultaneous control of noise having two or more intense excitation frequencies is also attainable.
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FAUVEL-LAFEVE, F., and Y. J. LEGRAND. "IMMUNOCHEMICAL IDENTIFICATION OF A THROMBOSPONDIN -LIKE ANTIGEN IN ARTERIAL THROMBOGENIC MICROFIBRILS." In XIth International Congress on Thrombosis and Haemostasis. Schattauer GmbH, 1987. http://dx.doi.org/10.1055/s-0038-1643823.
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The biochemical structure of arterial microfibrils (MFS) is unknown. Presently, the most probable hypothesis is that elastin associated MFS contain several antigenic determinants with MW varying between 31 and 200 KD.From our previous studies we know that MFS extracted by 6 M GuCl contain a major glycoprotein with a 128 KD MV (GP128). GP 128 is essential for the reactivity of MFS towards blood platelets but due tc the high insolubility of the extracted material it was not possible to isolate and study this GP 128. We have used immunoblotting to determine if MFS contain determinants recognized by antibodies against connective tissue glycoproteins such as fibronectin, type VI collagen or anti-platelet thrombospondin (TSP). 'The results showed that MFS do not contain fibronectin or type VI collagen but that anti-TSP IgG reacted with GP 128. Furthermore, the Fab fragments from anti-TSP IgG inhibited platelet aggregation induced by MFS but not by collagen or ADP . In a second step,to raise antibodies against GP 128, we prepared blots from entire MFS, the nitrocellulose band corresponding to GP 128 was cut, dissolved in DMSO, and wrs injected to rabbits. Such obtained antibodies recognized only GP 128 in arterial MFS and also TSP in a platelet lysate confirming that GP 128 and TSP have a common antigenic structure. IgG from anti-GP 128 inhibit platelet aggregation induced by MFS but not by collagen or ADP. Previously reported observations showed that tissue TSP and endothelial cells derived GP 128 have a similar affinity for chromatography supports and have the same effect on platelet-MFS interactions. All these results led us to propose that TSP, GP 128, and MFS recognize a common determinant on platelet membrane. This assumption would be strenghened if GP 128 indeed is derived from tissue TSP.
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Toti, F., A. Stierlé, M. L. Wiesel, A. Schwartz, J. M. Freyssinet, and J. P. Cazenave. "PRODUCTION OF ANTIBODIES TO HUMAN VON WILLEBRAND FACTOR IN LAYING HENS. ISOLATION OF IMMUNOGLOBULINS AND APPLICATIONS TO THE DETECTION OF MOLECULAR DEFECTS OF VON WILLEBRAND FACTOR." In XIth International Congress on Thrombosis and Haemostasis. Schattauer GmbH, 1987. http://dx.doi.org/10.1055/s-0038-1644084.
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Von Willebrand disease (vWD) is an inherited disorder of primary hemostasis caused by deficiency or structural abnormalities of von Willebrand factor (vWF). VWF circulates in plasma and is also present in platelets. Plasma vWF, the carrier protein for factor VIII, is a large multimeric glycoprotein composed of identical subunits linked by disulfide bridges. Plasma and platelet vWF display distinct multimeric electrophoretic patterns. The different vWD subtypes can be classified either by the determination of vWFantigen (vWFíAg) and/or by multimer distribution. Antibodies to human vWF were raised in laying hens by intramuscular injections of purified human vWF. Immunoglobulins were isolated from egg yolks by selective polyethylene glycol and ammonium sulfate precipitations. These antibodies appeared to be monospecific, as they did not react with the plasma proteins of a patient with severe vWD. The pullets received weekly 50 μg vWF for 4 weeks and then had monthly injections. The antibodies occurred as early as the third injection, the yield being 300 to 500 mg of immunoglobulin per week (6-7 eggs). The titre could be constant over periods greater than 1 year. These immunoglobulins to vWF were tested in vWFíAg electroimmunoassays and for the multimer analysis of plasma and platelet vWF by electrophoresis and immunoblotting techniques. In no case could a difference be detected between assays performed with rabbit monospecific antiserum or with yolk immunoglobulins to human vWF. Ten to 12 multimers could be revealed for normal plasma vWF and up to 12 to 14 bands for normal platelet vWF (1.7% agarose). In the case of vWD, the electrophoresis patterns were identical with both antibodies. Thus, antibodies to vWF raised in laying hens are a suitable tool to detect and to characterize vWD. Although they do not interact with protein A, yolk antibodies are certainly advantageous to produce, as they do not contain IgM or IgA. Immunoglobulin fractions can contain up to 10 % of specific antibodies. Since they are available in larger quantities and are easy to isolate, larger homogeneous batches of antibodies can be obtained. This method may easily be applied to develop antibodies to a variety of antigens.
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Miao, Qiang, and Dong Wang. "Fast Bayesian Inference on Optimal Wavelet Parameters for Bearing Fault Diagnosis." In ASME 2015 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/imece2015-51394.
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Rolling element bearings are widely used in various machinery to support rotation shaft and they are prone to failures. Once a bearing fails, it accelerates failures of other adjacent components and results in unexpected machine breakdown. To prevent machine breakdown and reduce unnecessary economic loss, bearing fault must be detected as early as possible. Besides spectral kurtosis, empirical mode decomposition, cyclostationarity, etc., wavelet transform has proven to be an effective method for identification of different bearing faults because it aims to highlight the inner product between an artificial wavelet function and a signal to be analyzed. In the application of wavelet transform, optimization of wavelet parameters attracts much attention because proper selection of wavelet parameters can maximize performance of wavelet transform and extract impulses caused by bearing faults in the case of interruption from other strong low-frequency vibration components and heavy noises. Compared with other optimization methods, such as genetic algorithm, particle swarm optimization, etc., an analytic and fast Bayesian inference on optimal wavelet parameters for an optimal wavelet filtering for bearing fault diagnosis is proposed in this paper. Prior to Bayesian inference, a state space model of wavelet parameters should be constructed to reflect the relationship between wavelet parameters and measurements. Here, measurements are monotonically increasing kurtosis values, which are able to quantify bearing fault signals. The first kurtosis value and initial wavelet parameters are provided by the fast kurtogram, which is a fast algorithm that can be used to locate one of resonant frequency bands for further demodulation with envelope analysis. For other measurements, they are generated by artificial extrapolations of the first kurtosis value. To iteratively infer posterior probability density functions of wavelet parameters and track the artificial measurements, an unscented transform based Bayesian method is introduced. As the iteration number increases, posterior probability density functions of wavelet parameters converge. Then, the optimal wavelet parameters can be found to conduct an optimal wavelet filtering so as to isolate bearing fault signals from other strong low-frequency vibration components. At last, squared envelope analysis and Fourier transform are utilized to demodulate bearing fault signals enhanced by the proposed method and to identify bearing fault characteristic frequencies, respectively. One real case study is used to illustrate how the proposed method works and to demonstrate that the proposed method can be effectively and efficiently used to extract bearing fault signatures. Additionally, a comparison with the fast kurtogram is conducted to show the proposed method is better than the fast kurtogram for bearing fault diagnosis.