Relevant bibliographies by topics / Isolated gate driver

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Isolated gate driver'

Author: Grafiati
Published: 25 May 2024
Last updated: 31 July 2025

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Journal articles on the topic "Isolated gate driver"

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Gras, David, Christophe Pautrel, Amir Fanaei, et al. "Highly Integrated and Isolated Universal Half-Bridge Power Gate Driver and Associated Flyback Power Supply for High Temperature and High Reliability Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (2014): 000206–13. http://dx.doi.org/10.4071/hitec-wp12.

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In this paper we present a highly integrated, high-temperature isolated, half-bridge power gate driver demo board, based on turnkey X-REL chipset: XTR26010 (High-Temperature Intelligent Gate Driver), XTR40010 (High-Temperature Isolated Two Channel Transceiver), XTR30010 (High-Temperature PWM Controller), and XTR2N0825 (High-Temperature 80V N-Channel Power MOSFET). The XTR26010 is the key circuit in this chipset for power gate drive application. The XTR26010 circuit has been designed with a high focus in offering a robust, reliable and efficient solution for driving a large variety of high-temp
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Matalata, Hendi, and Rozlinda Dewi. "Desain Rangkaian Gate Driver Analog untuk Dual Mosfet Drivers." Jurnal Ilmiah Universitas Batanghari Jambi 21, no. 2 (2021): 714. http://dx.doi.org/10.33087/jiubj.v21i2.1534.

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Switching techniques have been continued to develop, including sinusoidal PWM, space vector PWM, current tracking PWM, harmonic elimination PWM and others. Each method has advantages and disadvantages, but the most commonly used methods are sinusoidal PWM and space vector PWM. PWM that is generated using a microcontroller or analog IC component generally has a maximum voltage value of 5V. To strengthen the PWM wave, a gate-driver circuit is needed, so that the PWM control wave is able to move the IGBT / MOSFET. On this paper, the design of gate driver circuit use An analog IC, which starts fro
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Kuo, Hsuan-Yu, and Jau-Jr Lin. "Development of Miniaturized Monolithic Isolated Gate Driver." Advances in Science, Technology and Engineering Systems Journal 6, no. 5 (2021): 177–84. http://dx.doi.org/10.25046/aj060520.

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Doucet, Jean-Christophe, Aimad Saib, Christian Mourad, François Piette, Etienne Vanzieleghem, and Pierre Delatte. "HADES®: a High-Temperature Isolated Gate Driver Solution for SiC-based Multi-kW Converters." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (2011): 000145–51. http://dx.doi.org/10.4071/hiten-paper3-jcdoucet.

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This paper presents HADES® Gate Driver, a new solution that efficiently drives Silicon-Carbide (SiC) devices in multi-kW converters. It discusses how it allows taking full advantage of SiC technology by placing the gate driver circuits very close to the power transistors: The resulting lower parasitic inductances enable faster switching times and subsequently higher efficiency. Higher operating temperature for both the gate driver and the power transistors also translate into considerable reduction of complexity, size and weight of the system, in particular of the cooling systems. Finally, the
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Garcia, Jorge, Sarah Saeed, Emre Gurpinar, and Alberto Castellazzi. "A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers." Electronics 10, no. 2 (2021): 159. http://dx.doi.org/10.3390/electronics10020159.

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This work discusses a novel set of alternate implementations of isolated gate driver circuits for power electronic transistors. The proposed topologies for the driver have been designed specifically for SiC power MOSFET. Three different solutions are discussed, all of them providing the required gate turn-on and turn-off command signal with galvanic isolation, but also supplying power to the secondary side of the driver by means of magnetic transformers. The resulting solutions, all of them implemented with simple circuitry, enable the integration of the driver into the power cell, allowing fo
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Miraglia, Dante, Carlos Aguilar, and Jaime Arau. "Isolated Gate Driver for Medium Voltage Applications Using a Single Structure." Electronics 13, no. 17 (2024): 3368. http://dx.doi.org/10.3390/electronics13173368.

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According to the International Electrotechnical Commission, medium voltage ranges from 1 kV to 36 kV. In this voltage range, the field of power electronics has been focusing on developing power converters with high efficiency. Converters for such applications include solid-state transformers, energy storage systems for vehicle charging, electric aircraft, etc. Power ranges could reach tens to hundreds of kilowatts at relatively high frequency (10–50 kHz). Currently, there are no high-frequency power semiconductors capable of switching these voltage levels. Instead of using a single power switc
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Muhammad, Khairul Safuan, and Dylan Dah-Chuan Lu. "Magnetically Isolated Gate Driver With Leakage Inductance Immunity." IEEE Transactions on Power Electronics 29, no. 4 (2014): 1567–72. http://dx.doi.org/10.1109/tpel.2013.2279548.

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Zhao, Weichuan, Sohrab Ghafoor, Gijs Willem Lagerweij, Gert Rietveld, Peter Vaessen, and Mohamad Ghaffarian Niasar. "Comprehensive Investigation of Promising Techniques to Enhance the Voltage Sharing among SiC MOSFET Strings, Supported by Experimental and Simulation Validations." Electronics 13, no. 8 (2024): 1481. http://dx.doi.org/10.3390/electronics13081481.

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This paper comprehensively reviews several techniques that address the static and dynamic voltage balancing of series-connected MOSFETs. The effectiveness of these techniques was validated through simulations and experiments. Dynamic voltage-balancing techniques include gate signal delay adjustment methods, passive snubbers, passive clamping circuits, and hybrid solutions. Based on the experimental results, the advantages and disadvantages of each technique are investigated. Combining the gate-balancing core method with an RC snubber, which has proven both technically and commercially attracti
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Mayorga, J. Valle, C. Gutshall, K. Phan, et al. "High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (2011): 000152–58. http://dx.doi.org/10.4071/hiten-paper4-jmayorga.

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SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full re
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Sun, Jian, Zhen Wang, Wei Yan, et al. "46‐2: Reliable Gate Driver for Eye‐Tracking in High PPI VR Display Using LTPS TFTs." SID Symposium Digest of Technical Papers 55, no. 1 (2024): 619–22. http://dx.doi.org/10.1002/sdtp.17600.

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This paper demonstrates a novel low‐temperature‐poly‐Si thin film transistor (LTPS TFTs) gate driver with an isolated gate cascading output structure and staggered time node driving method to enhance the driving ability for high PPI VR display. The driver supports Foveated Rendering Display (FRD) mode, which enables eye tracking by exchanging two processes. Compared with conventional ones, the proposed driver shows enhanced driving ability due to the separation of gate output and gate cascading. Besides, the proposed gate driver reduces layout space for high PPI VR display by adopting a single
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Dissertations / Theses on the topic "Isolated gate driver"

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Laspeyres, Antoine. "Etude et conception d’un « Intelligent Power Module (IPM) » forte puissance en technologie SiC : développement du Gâte Driver." Electronic Thesis or Diss., Nantes Université, 2023. http://www.theses.fr/2023NANU4036.

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L’aéronautique tend à hybrider la propulsion et à électrifier de plus en plus de fonctions. Ceci entraîne une augmentation de la tension du réseau de bord HVDC afin de répondre à ces nouvelles contraintes sur les réseaux et systèmes électroniques. Pour atteindre ces objectifs, les nouveaux composants à semi-conducteurs de puissance SiC en calibre 3.3kV semblent être une alternative pro- metteuse à la filière Silicium IGBT. Cependant, leur faible maturité par rapport à la technologie Si est le principal frein à leur implémentation dans les réseaux de bords. Les travaux de recherche s’inscrivent
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Wanderoild-Morand, Yohan. "Enfouissement d’une alimentation isolée sous contraintes de température et d’isolation." Thesis, Lyon, 2018. http://www.theses.fr/2018LYSE1193/document.

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Certaines applications haute température telles que le forage, l’aéronautique ou l’aérospatial, amènent à repenser la conception des alimentations isolées permettant la commande des éléments de puissance. Ce mémoire s’articule autour de l’étude de la faisabilité et de l’enfouissement d’un convertisseur isolé possédant une forte isolation statique (10kV) et dynamique (<10 pF), pouvant travailler sous de hautes températures (>250°C), dans les gammes de tension de sortie de la dizaine de volts et de puissance de l’ordre du Watt. Pour ne pas être contraint par la température de Curie d’un ma
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Tan, Zheyuan. "Four-Output Isolated Power Supply for the Application of IGBT Gate Drive." Thesis, Virginia Tech, 2010. http://hdl.handle.net/10919/32925.

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This thesis focuses on the design issues of the multiple-output boost full-bridge converter, which is constructed by cascading the boost regulator with the inductor-less full-bridge converter. The design of the boost regulator has been proposed briefly with component selection and compensator design. After that, the inductor-less full-bridge converter is analyzed extensively. In the first place, the operation principle of the inductor-less full-bridge converter is introduced. Later, the effect of parasitic resistance and inductance is analyzed in an L-R series circuit model as step-response, w
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Lin, Kai-Chieh, and 林楷傑. "Design of Isolated Gate Driver with Voltage Level Shifter." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/pr3bq6.

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碩士<br>國立彰化師範大學<br>電機工程學系<br>106<br>Abstract This study introduces an isolated gate driver design using the TSMC highvoltage (HV) bulk 0.25-μm CMOS process. The isolated gate driver design with a voltage level shifter can effectively reduce input drive voltage requirements and the overall energy needed to the power gate drivers. This study also details the on-chip transformer and on-chip inductor used. The structure of the on-chip transformer comprises a stacked transformer (featuring increased coupling rate) and a tapped transformer (featuring superior voltage isolation). The circuit designed
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Books on the topic "Isolated gate driver"

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Miley, Mike. Truth and Consequences. University Press of Mississippi, 2019. http://dx.doi.org/10.14325/mississippi/9781496825384.001.0001.

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Truth and Consequences interrogates the ways in which over two dozen works of fiction and film find meaning in the game show. Writers and filmmakers use the game show intermedially as a metaphor for what it means to be a person, a lover, a family, and a citizen in the media age. Despite media culture’s promises of global equality and connectivity (and one’s efforts to realize that promise), individuals wind up isolated by market-driven deception, wealth, or ethnicity. People use media to achieve greater intimacy with others, but the market nudges them to keep their distance from each other in
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Book chapters on the topic "Isolated gate driver"

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Shreya, C., G. Praveen Kumar, Vikhyath D. Amin, and K. Suryanarayana. "Design and Development of Multi-output Isolated Supply for SiC MOSFET Gate Driver Using Flyback Topology." In Lecture Notes in Electrical Engineering. Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-15-0626-0_32.

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Javier Villalobos-Pina, Francisco, Josué A. Reyes-Malanche, Eduardo Cabal-Yepez, and Efrain Ramirez-Velasco. "Open Circuit Fault Diagnosis in Induction Motor Driver Inverter." In Induction Motors - Latest Research and Applications [Working Title]. IntechOpen, 2024. http://dx.doi.org/10.5772/intechopen.1006637.

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The induction machines are the power horses in the industry due to the practically null maintenance, this kind of machines are use in a widely group of industrial applications, and with the advance of power electronics these machines replace another kind, like direct current (dc) motors attributable to the evolution of control algorithms and the digital platforms. In this context, a methodology is proposed to detect and isolate faults, focusing on the inverter stage of Induction Machine motor drives, with a specific emphasis on Insulated Gate Bipolar Transistor (IGBT) faults, using phasor anal
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Madlberger, Maria. "Theoretical Foundations of Inter-Organizational Information Systems." In Inter-Organizational Information Systems and Business Management. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60960-768-5.ch003.

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Research on Inter-Organizational Information Systems (IOIS) provided many insights, which, however, are very fragmented in terms of applied theories. This results in a quite isolated understanding of single aspects of IOIS rather than a comprising approach to the research subject. To address these shortcomings, the chapter investigates seven theories in respect of their explanation of IOIS adoption and use, its drivers, IOIS-based collaboration between firms, and benefits and costs of IOIS. The applied theories are social exchange theory and embeddedness theory (organization theories), transac
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A. Rmila, Salahaldein. "Automatic Current Sharing Mechanism in Two-phase Series Capacitor Buck DC-DC Converter (2-pscB)." In Power Electronics, RF, and Microwave Engineering [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.107975.

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In this chapter, we introduce the concept of the Inherited Automatic Current Sharing Mechanism (ACSM) in a two-phase series capacitor buck topology (2-pscB). This topology was introduced to power laptops as low-voltage and high-current Voltage Regulator Modules as well as non-isolated Point-of-Load converters (Vin &lt; 12 V). To satisfy the converter stability, a state-space modeling technique of switching intervals coupled with parasitic component linearization is developed. Due to the series capacitor charging period miscalculation, the applicability of the ACSM of 2-pscB switching topology
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Ernest Daemane, Mahlomola, Samuel Adelabu, and Abel Ramoelo. "What Bioclimatic Factors Drive Habitat Suitability and Spatial Distribution of the Afrotemperate Forest Patches in the Mountainous Grassland Park in South Africa?" In Forest Science - Advances Towards Sustainable Development and Climate Resilience [Working Title]. IntechOpen, 2025. https://doi.org/10.5772/intechopen.1009336.

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The forests across the globe are undergoing significant changes because of climate change, which is mainly accountable for the frequency and intensity of extreme weather events. Nevertheless, numerous forests like those in the Golden Gate Highlands National Park (GGHNP) are crucial biogeographical connections between extensive forest regions in southern Africa, offering appropriate habitats for numerous forest species. This research employed bioclimatic variables to forecast the historical distribution of Afrotemperate forests in South Africa, encompassing the isolated patches in the GGHNP. Th
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Garmer, D. R., and D. R. Garmer. "Potential energies for the reaction F + H2 HF + H by the random walk method." In Quantum Monte Carlo. Oxford University PressNew York, NY, 2007. http://dx.doi.org/10.1093/oso/9780195310108.003.0056.

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Abstract If the reaction H + H2 H2 + H is number one on the list of interesting chemical reactions, then number two is the reaction F + H2 HF + H. It is very fast, it is highly exothermic, it drives chemical lasers, it can be studied in crossed molecular beams, it can be studied by infrared spectroscopy, and it involves only 11 electrons. This paper, and its companion paper a year earlier, report fixed-node diffusion QMC calculations of the ground-state potential energy surface for the F-H-H systems, with emphasis on the region of the barrier to reaction. At the time this work was completed, i
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Conference papers on the topic "Isolated gate driver"

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Yan, Zhixing, Yuan Gao, Gao Liu, et al. "Partial Discharge Improvements of Isolated Transformer in Medium-Voltage Gate-Driver Power Supply." In 2024 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2024. https://doi.org/10.1109/ecce55643.2024.10861793.

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Elahi, Asjad, and Mohamed Youssef. "A Novel Dual Channel Isolated Current Source Gate Driver for Fast Switching MOSFETs." In IECON 2024 - 50th Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2024. https://doi.org/10.1109/iecon55916.2024.10905815.

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Hou, Xiaowen, and Lingling Cao. "Research on High-Voltage Isolated Gate Driver Based on Wireless Power Transfer Technology." In 2025 IEEE 16th International Symposium on Power Electronics for Distributed Generation Systems (PEDG). IEEE, 2025. https://doi.org/10.1109/pedg62294.2025.11060033.

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Rouger, Nicolas, and Fabien Devilliers. "Tunable Isolated Gate Driver Supply for Automated Switching Loss Measurement of Power Field Effect Transistors." In 2024 IEEE Design Methodologies Conference (DMC). IEEE, 2024. https://doi.org/10.1109/dmc62632.2024.10812130.

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Li, Jiajun, Mariia Klymenko, Yanqiao Li, William Scheideler, and Jason T. Stauth. "An Optically Isolated Gate Driver with Simultaneous Data and Power Transmission through a Miniaturized, Efficient Photonic Platform." In 2025 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2025. https://doi.org/10.1109/apec48143.2025.10977289.

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Mitra, Arkendu, Sujoy Bhowmik, Subhra Mukherjee, Pallav Dutta, Barnali Kundu, and Debasree Saha. "A Universal Design of Flyback Converter for Isolated Gate Drive Power Supply." In 2024 International BIT Conference (BITCON). IEEE, 2024. https://doi.org/10.1109/bitcon63716.2024.10984643.

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Xiao, Yudi, Yuchuan Liao, Hanlin Ye, Rafael Pena Alzola, Weijia Yuan, and Min Zhang. "A Cryogenic Isolated Gate Drive Circuit for Medium-Voltage Medium-Current IGBT Modules." In 2024 CPSS & IEEE International Symposium on Energy Storage and Conversion (ISESC). IEEE, 2024. https://doi.org/10.1109/isesc63657.2024.10785411.

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Radoi, Radu, Liliana Dumitrescu, Bogdan Tudor, Andrei Benescu, and Robert Blejan. "PHOTOVOLTAIC SYSTEM FOR POWERING A REMOTE ACTUATION SYSTEM." In 24th SGEM International Multidisciplinary Scientific GeoConference 24. STEF92 Technology, 2024. https://doi.org/10.5593/sgem2024/4.1/s17.23.

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In isolated areas without access to the grid where it is necessary to operate certain equipment, such as the operation of a valve in a mining area or some gates on a irrigation canals, an installation with fotovoltaic supply can be used. Considering the intermittent operation regime of the driven equipment, a solar-powered drive installation can be designed, and by storing the energy in a battery, operation can be ensured during the night as well. Thus, the PV power system must be sized (PV peak power, battery and inverter capacities) so as to support the power of a compact hydraulic power pac
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Yang, Yirui, Yanwen Lai, Qinghui Huang, and Shuo Wang. "Modeling and Reduction of Radiated Emission Caused by Isolated Gate Drivers in Wide Bandgap Half-bridge-based Power Modules." In 2024 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2024. https://doi.org/10.1109/ecce55643.2024.10861102.

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Banu, Alexandru-Gabriel, Sebastian Stamate, Vlad Anghel, Ines Hurez, and Şerban Mihalache. "The Jack-of-All-Trades for Dual-Channel Galvanically Isolated Gate Drivers: A Multi-Function Pin for Dead-Time Control." In 2024 International Semiconductor Conference (CAS). IEEE, 2024. http://dx.doi.org/10.1109/cas62834.2024.10736751.

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