Relevant bibliographies by topics / Kelvin force probe microscopy

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Academic literature on the topic 'Kelvin force probe microscopy'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 February 2022

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Journal articles on the topic "Kelvin force probe microscopy"

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Nonnenmacher, M., M. P. O’Boyle, and H. K. Wickramasinghe. "Kelvin probe force microscopy." Applied Physics Letters 58, no. 25 (June 24, 1991): 2921–23. http://dx.doi.org/10.1063/1.105227.

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Jakob, Devon S., Haomin Wang, and Xiaoji G. Xu. "Pulsed Force Kelvin Probe Force Microscopy." ACS Nano 14, no. 4 (April 13, 2020): 4839–48. http://dx.doi.org/10.1021/acsnano.0c00767.

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Blücher, D. Bengtsson, J. E. Svensson, L. G. Johansson, M. Rohwerder, and M. Stratmann. "Scanning Kelvin Probe Force Microscopy." Journal of The Electrochemical Society 151, no. 12 (2004): B621. http://dx.doi.org/10.1149/1.1809590.

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Jakob, Devon S., Haomin Wang, Guanghong Zeng, Daniel E. Otzen, Yong Yan, and Xiaoji G. Xu. "Peak Force Infrared–Kelvin Probe Force Microscopy." Angewandte Chemie International Edition 59, no. 37 (June 25, 2020): 16083–90. http://dx.doi.org/10.1002/anie.202004211.

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Jakob, Devon S., Haomin Wang, Guanghong Zeng, Daniel E. Otzen, Yong Yan, and Xiaoji G. Xu. "Peak Force Infrared–Kelvin Probe Force Microscopy." Angewandte Chemie 132, no. 37 (June 25, 2020): 16217–24. http://dx.doi.org/10.1002/ange.202004211.

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Kohl, Dominik, Patrick Mesquida, and Georg Schitter. "Quantitative AC - Kelvin Probe Force Microscopy." Microelectronic Engineering 176 (May 2017): 28–32. http://dx.doi.org/10.1016/j.mee.2017.01.005.

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MIZUTANI, Takashi. "Expectation on Kelvin Probe Force Microscopy." Hyomen Kagaku 22, no. 5 (2001): 281. http://dx.doi.org/10.1380/jsssj.22.281.

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Collins, Liam, Stephen Jesse, Jason I. Kilpatrick, Alexander Tselev, M. Baris Okatan, Sergei V. Kalinin, and Brian J. Rodriguez. "Kelvin probe force microscopy in liquid using electrochemical force microscopy." Beilstein Journal of Nanotechnology 6 (January 19, 2015): 201–14. http://dx.doi.org/10.3762/bjnano.6.19.

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Conventional closed loop-Kelvin probe force microscopy (KPFM) has emerged as a powerful technique for probing electric and transport phenomena at the solid–gas interface. The extension of KPFM capabilities to probe electrostatic and electrochemical phenomena at the solid–liquid interface is of interest for a broad range of applications from energy storage to biological systems. However, the operation of KPFM implicitly relies on the presence of a linear lossless dielectric in the probe–sample gap, a condition which is violated for ionically-active liquids (e.g., when diffuse charge dynamics are present). Here, electrostatic and electrochemical measurements are demonstrated in ionically-active (polar isopropanol, milli-Q water and aqueous NaCl) and ionically-inactive (non-polar decane) liquids by electrochemical force microscopy (EcFM), a multidimensional (i.e., bias- and time-resolved) spectroscopy method. In the absence of mobile charges (ambient and non-polar liquids), KPFM and EcFM are both feasible, yielding comparable contact potential difference (CPD) values. In ionically-active liquids, KPFM is not possible and EcFM can be used to measure the dynamic CPD and a rich spectrum of information pertaining to charge screening, ion diffusion, and electrochemical processes (e.g., Faradaic reactions). EcFM measurements conducted in isopropanol and milli-Q water over Au and highly ordered pyrolytic graphite electrodes demonstrate both sample- and solvent-dependent features. Finally, the feasibility of using EcFM as a local force-based mapping technique of material-dependent electrostatic and electrochemical response is investigated. The resultant high dimensional dataset is visualized using a purely statistical approach that does not require a priori physical models, allowing for qualitative mapping of electrostatic and electrochemical material properties at the solid–liquid interface.
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Ligowski, Maciej, Michiharu Tabe, and Ryszard Jabłoński. "Kelvin Probe Force Microscope Measurement Uncertainty." Advanced Materials Research 222 (April 2011): 114–17. http://dx.doi.org/10.4028/www.scientific.net/amr.222.114.

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Kelvin Probe Force Microscopy is an attractive technique for characterizing the surface potential of various samples. The main advantage of this technique is its high spatial resolution together with high sensitivity. However as in any nanoscale measurements also in case of KFM it is extremly difficult to describe the uncertainty of the measurement. Moreover, a wide variety of measuring conditions, together with the complicated operation principle cause situation, where no standard calibration methods are available. In the paper we propose the model of the KFM microscope and analyze the uncertainty of the KFM measurement.
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Kline, R. J., J. F. Richards, and P. E. Russell. "Scanning Kelvin Force and Capacitance Microscopy Applications." Microscopy and Microanalysis 4, S2 (July 1998): 330–31. http://dx.doi.org/10.1017/s1431927600021772.

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Scanning Probe Microscopy (SPM) is being developed as a possible solution to the problems inherent with analyzing the nanometer scale electronic properties of ULSI integrated circuits. Scanning Kelvin Probe Microscopy (SKPM) and Scanning Capacitance Microscopy (SCM) are both being developed to provide two dimensional dopant profiles of semiconductor devices. SKPM can also determine surface potentials, work functions, dielectric properties, and capacitance.SKPM is based on the concept of Kelvin probe oscillating capacitor work function measurements. The small capacitance area of the SKPM tip and the high resistance of the system produce difficulties in monitoring and minimizing the current in the system. SKPM solves this problem by utilizing the force monitoring capability of the SPM to minimize the Kelvin force instead of the current. An AC voltage applied to the cantilever produces a DC force and AC forces at the AC frequency and the first harmonic of the AC frequency.
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Dissertations / Theses on the topic "Kelvin force probe microscopy"

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Ye, Sheng. "Kelvin Probe Force Microscopy (KPFM) for nanoelectronic device characterisation." Thesis, University of Southampton, 2016. https://eprints.soton.ac.uk/419059/.

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This project is to develope a new method of characterization for Silicon-nano-wire (SiNW) FET and SET devices by using KPFM technology to derive the information of local surface potential change on the channel of SiNW devices. The surface potential is related to many important parameters on material's surface, e.g. fixed surface charge, doping profile variation, distribution of charge carriers under applied bias, and individual dopant atoms near the surface. Those parameters are strongly related to the characteristics of SiNW devices. The KPFM equipment is designed to extract the contact potential difference (CPD) between tip and sample. The change of CPD is related to the Fermi energy level in materials. Therefore any factors which induce Fermi energy level change inside material are detectable. The significantly improved lateral resolution (sub-nanometer) gives us confidence for the measurement of local surface potential variation. Much of the time has been dedicated for the KPFM equipment calibration and optimization. By the end of PhD project the surface potential characterisation of three different types of the silicon-nano-wire (SiNW) devices (uniformly doped SiNW, n-pn SiNW Field-Effect-Transistor (FET), and n-p-n-p-n SiNW Single-Electron-Transistor (SET)) has been achieved. By using surface potential information the surface traped charge and change in local resistivity in SiNW is successfully estimated and the result is confirmed well agreed with the characterisation of other conventional method. This characterisation result also suggest the accuracy of local surface potential measurement. In-situ potential mapping and proling of n-p-n FET channel under device operation has been successfully performed. By comparing the data with simulation and electrical characterisation of the same device, correspondence between the line-shape of the surface potential and electrical field profiles and device parameters has been clarified for the first time. An attempt has been made to observe the surface potential of the channel of SET devices which have shown clear Coulomb oscillation at low temperature (5K). The formation of a conductive channel in 330-nm-wide SiNW channel by the side gate modulation is successfully observed. Four main achievements can be claimed at the end of this project. First, the metallurgic p-n junction in thin (50nm) SOI has been first time ever detected by Ex curve extraction from measured potential profile and the Ex curve was used to study the charge transport in the n-p-n structure under different biasing condition. Secondary, the novel single side gate doping modulated single electron transistors was fabricated and shown Coulomb oscillations which was consistent with theoretical predictions. Furthermore, the operation of FET/SET was investigated by scanned high resolution surface potential profile which revealed the status of p-n junction under biasing. In the end, this study discovered a new method to investigate nano-electronic devices by KPFM scan and more information such as change in build-in voltage at low temperature, and charge in charge state of island can be extracted if the high vacuum and low temperature is applied.
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Murawski, Jan. "Time-Resolved Kelvin Probe Force Microscopy of Nanostructured Devices." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-224810.

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Since its inception a quarter of a century ago, Kelvin probe force microscopy (KPFM) has enabled studying contact potential differences (CPDs) on the nanometre scale. However, current KPFM investigations are limited by the bandwidth of its constituent electronic loops to the millisecond regime. To overcome this limitation, pump-probe-driven Kelvin probe force microscopy (pp-KPFM) is introduced that exploits the non-linear electric interaction between tip and sample. The time resolution surpasses the electronic bandwidth and is limited by the length of the probe pulse. In this work, probe pulse lengths as small as 4.5 ns have been realized. These probe pulses can be synchronized to any kind of pump pulses. The first system investigated with pp-KPFM is an electrically-driven organic field-effect transistor (OFET). Here, charge carrier propagation in the OFET channel upon switching the drain-source voltage is directly observed and compared to simulations based on a transmission line model. Varying the charge carrier density reveals the impeding influence of Schottky barriers on the maximum switching frequency. The second system is an optically-modulated silicon homojunction. Here, the speed of surface photovoltage (SPV) build-up is accessed and compared to timeaveraged results. Due to slow trap states, the time-averaged method is found to lack comprehensiveness. In contrast, pp-KPFM exposes two intensity-dependent recombination times on the same timescale — high-level Shockley-Read-Hall recombination in the bulk and heat-dominated recombination in the surface layer — and a delay of the SPV decay with rising frequency, which is attributed to charge carrier retention at nanocrystals. The third system is a DCV5T-Me:C60 bulk heterojunction. The SPV dynamics is probed and compared to measurements via open-circuit corrected transient charge carrier extraction by linearly increasing voltage. Both methods reveal an exponential onset of the band bending reduction that is attributed to the charge carrier diffusion time in DCV5T-Me, and a double exponential decay, hinting at different recombination paths in the studied organic solar cell. The above-mentioned experiments demonstrate that pp-KPFM surpasses conventional KPFM when it comes to extracting dynamic device parameters such as charge carrier retention and recombination times, and prove that pp-KPFM is a versatile and reliable tool for studying electrodynamics on nanosurfaces.
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Milde, Peter. "Visualisation of Local Charge Densities with Kelvin Probe Force Microscopy." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-70867.

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For the past decades, Kelvin probe force microscopy (KPFM) developed from a sidebranch of atomic force microscopy to a widely used standard technique. It allows to measure electrostatic potentials on any type of sample material with an unprecedented spatial resolution. While the technical aspects of the method are well understood, the interpretation of measured data remains object of intense research. This thesis intends to prove an advanced view on how sample systems which are typical for ultrahigh resolution imaging, such as organic molecular submonolayers on metals, can be quantitavily analysed with the differential charge density model. In the first part a brief introduction into the Kelvin probe experiment and atomic force microscopy is given. A short review of the theoretical background of the technique is presented. Following, the differential charge density model is introduced, which is used to further explain the origin of contrast in Kelvin probe force microscopy. Physical effects, which cause the occurence of local differential charge densities, are reviewed for several sample systems that are of interest in high resolution atomic force microscopy. Experimental evidence for these effects is presented in the second part. Atomic force microscopy was used for in situ studies of a variety of sample systems ranging from pristine metal surfaces over monolayer organic adsorbates on metals to ferroelectric substrates both, with and without organic thin film coverage. As the result from these studies, it is shown that the differential charge density model accurately describes the experimentally observed potential contrasts. This implies an inherent disparity of the measurement results between the different Kelvin probe force microscopy techniques; a point which had been overseen so far in the discussion of experimental data. Especially for the case of laterally strong confined differential charge densities, the results show the opportunity as well as the necessity to explain experimental data with a combination of ab initio calculations of the differential charge density and an electrostatic model of the tip-sample interaction.
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Ruiz, Ortega Leonardo Ibor. "Micropatterns for surface potential mapping of biomolecules by Kelvin probe force microscopy." Thesis, King's College London (University of London), 2018. https://kclpure.kcl.ac.uk/portal/en/theses/micropatterns-for-surface-potential-mapping-of-biomolecules-by-kelvin-probe-force-microscopy(2a7d9300-f575-4786-b9a3-600e807cd66c).html.

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Current methods to detect and quantify electrostatic properties of biomolecules, nowadays, still facing many challenges. For instance, they are not sensitive enough to meet the needs of more precise measurements, they require the use of external markers or antibodies, or rely on indirect calculations or models such is the case for zeta potential and electrophoretic mobility. However, Kelvin probe force microscopy (KPFM) have gained attention due to its expanding possibilities to asses electrostatic properties of biomolecules. Among the advantages that KPFM possess over other methods, stands out its high sensitivity and spatial resolution. Moreover, it does not require the use of external labels. In the interest of establishing a method for mapping surface potential of biomolecules by means of Kelvin probe force microscopy, two techniques of poly-dimethylsiloxane (PDMS) soft lithography for micro-patterning (micro channel filling and micro contact printing) are studied. Similarly, the possibility of patterning biomolecules on different substrates (mica, glass and silicon dioxide) is explored. Primarily, poly-L-lysine was used as a model biomolecule due to the exposure of amino functional groups. Different physicochemical conditions on poly-Llysine micro patterns were tested in order to assess the suitability of soft lithography combined with KPFM to measure electrostatic properties of biomolecules. In this sense, continuous KPFM scans, immersions in water, lift height and time dependence were investigated. Moreover, due to the importance of the understanding of the effects of exposure of biomolecules to elevated levels of sugars, immersions in D-ribose were performed. A concentration dependent effect was observed, affecting drastically the surface potential of polyL-lysine. Electrostatically driven patterning of colloidal gold nanoparticles was also achieved on pol-L-lysine micro patterns, resulting in a good method for marking the presence of pol-Llysine and opening the possibility to improve some properties of nanoparticle systems. Besides microchannel filling, micro contact printing of poly-L-lysine was successfully achieved on mica, glass and silicon dioxide, resulting in better quality micro patterns and understanding of the influence of using different substrates on surface potential. On this regard, continuous KPFM scans revealed a surface charge dynamic on mica, whereas on glass and silicon dioxide surface potential became more stable. Insulin, BSA and β-lactoglobulin were successfully patterned on mica by micro contact printing and imaged by KPFM. Response to pH and immersions in water was investigated showinga clear reversible shift on surface potential. Similarly, cross-patterning of different proteins on the same substrate for surface potential oneto-one comparison was successfully achieved. The classic case of avidin-biotin complex was also investigated byboth fluorescence optical microscopy and KPFM. Finally, in an attempt to stretch the applications of KPFM for surface potential mapping of biomolecules, insulin amyloid fibrils were co-fibrillated with highly charge nanoparticles. Surface potential maps of amyloid structures were achieved and the effect of continuous scanning on surface potential was assessed.
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Bostanci, Umut. "Development Of Atomic Force Microscopy System And Kelvin Probe Microscopy System For Use In Semiconductor Nanocrystal Characterization." Master's thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/12608812/index.pdf.

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Atomic Force Microscopy (AFM) and Kelvin Probe Microscopy (KPM) are two surface characterization methods suitable for semiconductor nanocrystal applications. In this thesis work, an AFM system with KPM capability was developed and implemented. It was observed that, the effect of electrostatic interaction of the probe cantilever with the sample can be significantly reduced by using higher order resonant modes for Kelvin force detection. Germanium nanocrystals were grown on silicon substrate using different growth conditions. Both characterization methods were applied to the nanocrystal samples. Variation of nanocrystal sizes with varying annealing temperature were observed. Kelvin spectroscopy measurements made on nanocrystal samples using the KPM apparatus displayed charging effects.
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Baumgart, Christine. "Quantitative dopant profiling in semiconductors: A new approach to Kelvin probe force microscopy." Forschungszentrum Dresden, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-97372.

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Failure analysis and optimization of semiconducting devices request knowledge of their electrical properties. To meet the demands of today’s semiconductor industry, an electrical nanometrology technique is required which provides quantitative information about the doping profile and which enables scans with a lateral resolution in the sub-10 nm range. In the presented work it is shown that Kelvin probe force microscopy (KPFM) is a very promising electrical nanometrology technique to face this challenge. The technical and physical aspects of KPFM measurements on semiconductors required for the correct interpretation of the detected KPFM bias are discussed. A new KPFM model is developed which enables the quantitative correlation between the probed KPFM bias and the dopant concentration in the investigated semiconducting sample. Quantitative dopant profiling by means of the new KPFM model is demonstrated by the example of differently structured, n- and p-type doped silicon. Additionally, the transport of charge carriers during KPFM measurements, in particular in the presence of intrinsic electric fields due to vertical and horizontal pn junctions as well as due to surface space charge regions, is discussed. Detailed investigations show that transport of charge carriers in the semiconducting sample is a crucial aspect and has to be taken into account when aiming for a quantitative evaluation of the probed KPFM bias.
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Fratelli, Ilaria. "Flexible oxide thin film transistors: device fabrication and kelvin probe force microscopy analysis." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amslaurea.unibo.it/13538/.

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I transistor a film sottile basati su ossidi amorfi semiconduttori sono ottimi candidati nell'ambito dell'elettronica su larga scala. Al contrario delle tecnologie basate su a-Si:H a poly-Si, gli AOS presentano un'elevata mobilità elettrica (m > 10 cm^2/ Vs) nonostante la struttura amorfa. Inoltre, la possibilità di depositare AOS a basse temperature e su substrati polimerici, permette il loro impiego nel campo dell'elettronica flessibile. Al fine di migliorare questa tecnologia, numerosi TFT basati su AOS sono stati fabbricati durante 4 mesi di attività all'Università Nova di Lisbona. Tutti i transistor presentano un canale formato da a-GIZO, mentre il dielettrico è stato realizzato con due materiali differenti: Parylene (organico) e 7 strati alternati di SiO2 e SiO2 + Ta2O5. I dispositivi sono stati realizzati su substrati flessibili sviluppando una nuova tecnica per la laminazione e la delaminazione di fogli di PEN su supporto rigido. L'ottimizzazione del processo di fabbricazione ha permesso la realizzazione di dispositivi che presentano caratteristiche paragonabili a quelle previste per TFT costruiti su substrati rigidi (m = 35.7 cm^2/Vs; VON = -0.10 V; S = 0.084 V/dec). Al Dipartimento di Fisica dell'UNIBO, l'utilizzo del KPFM ha permesso lo studio a livello microscopico delle prestazioni presentate dai dispositivi analizzati. Grazie a questa tecnica di indagine, è stato possibile analizzare l'impatto delle resistenze di contatto sui dispositivi meno performanti e identificare l'esistenza di cariche intrappolate nei TFT basati su Parylene. Gli ottimi risultati ottenuti dall'analisi KPFM suggeriscono un futuro impiego di questa tecnica per lo studio del legame tra stress meccanico e degradazione elettrica dei dispositivi. Infatti, la comprensione dei fenomeni microscopici dovuti alla deformazione strutturale sarà un passaggio indispensabile per lo sviluppo dell'elettronica flessibile.
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Baumgart, Christine. "Quantitative dopant profiling in semiconductors: A new approach to Kelvin probe force microscopy." Helmholtz-Zentrum Dresden-Rossendorf, 2012. https://hzdr.qucosa.de/id/qucosa%3A22160.

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Failure analysis and optimization of semiconducting devices request knowledge of their electrical properties. To meet the demands of today’s semiconductor industry, an electrical nanometrology technique is required which provides quantitative information about the doping profile and which enables scans with a lateral resolution in the sub-10 nm range. In the presented work it is shown that Kelvin probe force microscopy (KPFM) is a very promising electrical nanometrology technique to face this challenge. The technical and physical aspects of KPFM measurements on semiconductors required for the correct interpretation of the detected KPFM bias are discussed. A new KPFM model is developed which enables the quantitative correlation between the probed KPFM bias and the dopant concentration in the investigated semiconducting sample. Quantitative dopant profiling by means of the new KPFM model is demonstrated by the example of differently structured, n- and p-type doped silicon. Additionally, the transport of charge carriers during KPFM measurements, in particular in the presence of intrinsic electric fields due to vertical and horizontal pn junctions as well as due to surface space charge regions, is discussed. Detailed investigations show that transport of charge carriers in the semiconducting sample is a crucial aspect and has to be taken into account when aiming for a quantitative evaluation of the probed KPFM bias.
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Narvaez, Gonzalez Angela Carolina. "Nanofios semicondutores : análise de propriedades elétricas e estruturais por microscopia no modo Kelvin Probe." [s.n.], 2008. http://repositorio.unicamp.br/jspui/handle/REPOSIP/278455.

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Orientador: Monica Alonso Cotta
Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin
Made available in DSpace on 2018-08-11T21:43:56Z (GMT). No. of bitstreams: 1 NarvaezGonzalez_AngelaCarolina_M.pdf: 14145813 bytes, checksum: 31ac8f1ebde240684c9bbe88b9c9b7a7 (MD5) Previous issue date: 2008
Resumo: As propriedades elétricas de nanofios (InAs, InP, InP-InAs-InP, InAsP) individuais e em junções foram estudadas implementando simultaneamente as técnicas Non Contact Atomic Force Microscopy NC-AFM (para aquisição da topografia) e Amplitude-sensitive Modulated Kelvin Probe Microscopy AM-KPFM (fornece medidas do Potencial de Superfície), permitindo correlacionar as propriedades elétricas com a estrutura da amostra. Em particular, o comportamento do Potencial de Superfície (PS) em função do diâmetro do nanofio foi investigado e utilizado na identificação do material que o compõe. Em uma primeira etapa, a técnica AM-KPFM foi caracterizada, principalmente em termos de resolução para análise de nano-objetos. Nossos resultados evidenciaram um fator de escala presente associado à eletrônica do equipamento, que somente permitiu realizar uma análise qualitativa dos dados adquiridos. Além disso, foi observada uma diminuição no contraste nas medidas elétricas quando o tamanho do objeto analisado diminui. Medidas em nanofios individuais de InP e InAs permitiram estabelecer que há uma queda no PS quando o diâmetro do fio diminui. Este comportamento é o resultado de duas contribuições: a perda no contraste (efeito de tamanho na medida) e o incremento local da função trabalho, que poderíamos associar ao aumento da proporção entre a carga superficial e a carga no interior do fio. Nas junções, há um aumento no PS na região da junção, indicando a formação de uma barreira de energia associada à acumulção de carga. Isto isola as junções do comportamento típico observado em nanofios individuais. Medidas em junções montadas em dispositivos poderiam complementar o estudo deste tipo de configurações. A caracterização do PS em função do diâmetro para os nanofios de InP e InAs permitiu a identificação do material (InAs ou InP) presente ao longo dos fios heteroestruturados de InP-InAs-InP, mostrando também a presença da nanopartícula de ouro usada como catalisador no crescimento. Os contrastes no PS ao longo do fio não se correlacionam diretamente às imagens de Microscopia Eletrônica de Transmissão, sugerindo que a interface elétrica é diferente da metalúrgica. Nos nanofios de InAsP, pelo contrário, os dados obtidos indicam a formação de uma liga ternária
Abstract: The electric properties of InAs, InP, InP-InAs-InP and InAsP nanowires (NWs) -assembled both individually and in junctions - were studied by simultaneous imple-mentation of Non Contact Atomic Force Microscopy NC-AFM (for topography) and Amplitude-sensitive Modulated Kelvin Probe Microscopy AM-KPFM (for Surface Potential distribution), obtaining spatially resolved electrical measurements of the sample structure. In particular, the SP vs NW diameter behavior was investigated and used to identify the material composing the nanowires. In a first approach, AM-KPFM was characterized mainly in terms of resolution for the analysis of the nano-objects. Our results suggest there is a scale factor on our measurements associated to the equipment electronics, that limited our discussion to a qualitative interpretation of the acquired data. Also, a contrast decrease on SP measurements was observed when the size of the object is reduced, comparatively to the tip. The experimental results on individual InAs and InP nanowires showed a SP saturation level (SPsat) below which SP drops with the NW diameter. This behavior came from at least two contributions: a loss of SP contrast due to object/tip size effects and a local increment on work function, that we associate to the larger surface/volume ratio close to the NW tip which makes the material more intrinsic. For NWs on junctions, a larger SP value is correlated to the regions where the junction is formed, possibly due to charge accumulation. Measurements of junctions assembled on devices could complement the study of this kind of structures. The SP vs diameter characterization of InAs and InP nanowires also allowed the identification of the material along the heterostructured InP-InAs-InP nanowire, showing the presence of the Au nanoparticle used to catalyze the growth. The SP image is not directly correlated with HR-TEM images, suggesting that electric and metallurgic interfaces are not the same. For InAsP nanowires, the acquired data indicate the formation of an homogeneous ternary alloy
Mestrado
Física da Matéria Condensada
Mestre em Física
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Romero, Lairado Francisco [Verfasser]. "Preparation and interpretation of Kelvin probe force microscopy experiments on bulk insulators / Francisco Romero Lairado." Mainz : Universitätsbibliothek Mainz, 2018. http://d-nb.info/1168757908/34.

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Books on the topic "Kelvin force probe microscopy"

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Sadewasser, Sascha, and Thilo Glatzel, eds. Kelvin Probe Force Microscopy. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-22566-6.

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Sadewasser, Sascha, and Thilo Glatzel, eds. Kelvin Probe Force Microscopy. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-75687-5.

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Paul, West, ed. Atomic force microscopy. Oxford: Oxford University Press, 2010.

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P, Moody Michael, Cairney Julie M, Ringer Simon P, and SpringerLink (Online service), eds. Atom Probe Microscopy. New York, NY: Springer New York, 2012.

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Haugstad, Greg. Atomic force microscopy: Exploring basic modes and advanced applications. Hoboken, N.J: John Wiley & Sons, 2012.

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Molecular manipulation with atomic force microscopy. Boca Raton: CRC Press, 2011.

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International Conference on Scanning Probe Microscopy in Biomaterials Science (2nd 2000 Bristol, England). SPM Biomaterials 2000: Proceedings of the 2nd International Conference on Scanning Probe Microscopy in Biomaterials Science, Bristol, United Kingdom, 23 June 2000. Edited by Jandt Klaus D and Marchant Roger E. Amsterdam, The Netherlands: Elsevier, 2001.

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Sadewasser, Sascha, and Thilo Glatzel. Kelvin Probe Force Microscopy: Measuring and Compensating Electrostatic Forces. Springer, 2013.

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Kelvin Probe Force Microscopy Measuring And Compensating Electrostatic Forces. Springer, 2011.

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Sadewasser, Sascha, and Thilo Glatzel. Kelvin Probe Force Microscopy: From Single Charge Detection to Device Characterization. Springer, 2018.

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Book chapters on the topic "Kelvin force probe microscopy"

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Bhushan, Bharat, and Manuel L. B. Palacio. "Kelvin Probe Force Microscopy." In Encyclopedia of Nanotechnology, 1173–79. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_150.

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Li, Yan Jun, Haunfei Wen, Zong Min Ma, Lili Kou, Yoshitaka Naitoh, and Yasuhiro Sugawara. "Kelvin Probe Force Microscopy with." In Kelvin Probe Force Microscopy, 437–63. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-75687-5_14.

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Sadewasser, S., and Th Glatzel. "Introduction." In Kelvin Probe Force Microscopy, 1–3. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22566-6_1.

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Onishi, H., and A. Sasahara. "Local Work Function of Catalysts and Photoelectrodes." In Kelvin Probe Force Microscopy, 201–19. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22566-6_10.

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Loppacher, Christian. "Electronic Properties of Metal/Organic Interfaces." In Kelvin Probe Force Microscopy, 221–41. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22566-6_11.

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Rodriguez, B. J., and S. V. Kalinin. "KPFM and PFM of Biological Systems." In Kelvin Probe Force Microscopy, 243–87. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22566-6_12.

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Glatzel, Th. "Measuring Atomic-Scale Variations of the Electrostatic Force." In Kelvin Probe Force Microscopy, 289–327. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22566-6_13.

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Sadewasser, S. "Experimental Technique and Working Modes." In Kelvin Probe Force Microscopy, 7–24. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22566-6_2.

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Diesinger, H., D. Deresmes, and T. Mélin. "Capacitive Crosstalk in AM-Mode KPFM." In Kelvin Probe Force Microscopy, 25–44. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22566-6_3.

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Rosenwaks, Y., G. Elias, E. Strassbourg, A. Schwarzman, and A. Boag. "The Effect of the Measuring Tip and Image Reconstruction." In Kelvin Probe Force Microscopy, 45–67. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22566-6_4.

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Conference papers on the topic "Kelvin force probe microscopy"

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Machleidt, Torsten, Erik Sparrer, Tim Kubertschak, Rico Nestler, and Karl-Heinz Franke. "Kelvin probe force microscopy: measurement data reconstruction." In SPIE Scanning Microscopy, edited by Michael T. Postek, Dale E. Newbury, S. Frank Platek, and David C. Joy. SPIE, 2009. http://dx.doi.org/10.1117/12.821787.

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Yan, Liang, Christian Punckt, Ilhan A. Aksay, Wolfgang Mertin, Gerd Bacher, Jisoon Ihm, and Hyeonsik Cheong. "Potential Distribution in Functionalized Graphene Devices Probed by Kelvin Probe Force Microscopy." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666628.

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Ikeda, Hiroya, Kazutoshi Miwa, and Faiz Salleh. "Construction of Seebeck-coefficient measurement by Kelvin-probe force microscopy." In 9TH EUROPEAN CONFERENCE ON THERMOELECTRICS: ECT2011. AIP, 2012. http://dx.doi.org/10.1063/1.4731575.

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Hurst, Jeffrey, Kin-Sang Lam, Clint Bordelon, Michael Wilson, Brian Smith, and Shane Phillips. "Kelvin probe force microscopy of gate stack metal alloy films." In 2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). IEEE, 2017. http://dx.doi.org/10.1109/asmc.2017.7969246.

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Hurst, Jeffrey, Kin-Sang Lam, Clint Bordelon, Michael Wilson, Brian Smith, and Shane Phillips. "Kelvin probe force microscopy of gate stack metal alloy films." In 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO). IEEE, 2017. http://dx.doi.org/10.23919/mipro.2017.7966593.

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Kodera, M., Y. Yoshimizu, and K. Uchida. "Potential Characterization of Interconnect Corrosion by Kelvin Probe Force Microscopy." In 2011 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2011. http://dx.doi.org/10.7567/ssdm.2011.c-9-2.

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McNamara, J. D., A. J. Duncan, M. J. Morgan, and P. S. Korinko. "Imaging Hydrogen in Stainless Steel Alloys by Kelvin Probe Force Microscopy." In ASME 2018 Pressure Vessels and Piping Conference. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/pvp2018-84755.

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Abstract:
Kelvin probe force microscopy (KPFM) was used to image austenitic stainless steel (SS) samples (Type 304L) fabricated by the laser engineered net shaping (LENS®) process. The samples were hydrogen charged (H-charged) and subsequently cut and polished. The surface contact potential difference (CPD) of the samples was measured using the KPFM technique, a form of atomic force microscopy. A set of uncharged samples was also studied for reference and changes in the CPD were on the noise level. For H-charged samples fabricated by the LENS® process, the resulting surface potential images show a change in CPD of about 10 – 20mV around cell-like boundaries (5–10 μm in size) and grain boundaries (50–100 μm in size). The significant change in the CPD is affected by variation of the local work function, which indicates the presence of hydrogen. The elemental composition of the LENS® samples was studied using energy dispersive spectroscopy (EDS) which showed an increase in the atomic percentage of Cr and a decrease in Ni around the cell-like boundaries. The existence of intercellular ferrite on the sub-grain boundaries may explain the propensity of hydrogen to segregate around these regions. The finer grain structure of LENS® samples compared to that of forged or welded samples suggests that the hydrogen can be dispersed differently throughout this material than in traditionally forged austenitic SS. This study is conducted to elucidate the behavior of hydrogen with respect to the microstructure of additively manufactured stainless steel alloys.
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Zhang, Hao, Danish Hussain, Xianghe Meng, Jianmin Song, and Hui Xie. "Measurement of surface potential and adhesion with Kelvin Probe Force Microscopy." In 2016 International Conference on Manipulation, Automation and Robotics at Small Scales (MARSS). IEEE, 2016. http://dx.doi.org/10.1109/marss.2016.7561734.

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ROCHE, R., A. L. LEREU, and Ph DUMAS. "PREDICTABLE BEHAVIOR OF ORGANIC PHOTOVOLTAIC CELLS BY KELVIN PROBE FORCE MICROSCOPY." In Proceedings of International Conference Nanomeeting – 2013. WORLD SCIENTIFIC, 2013. http://dx.doi.org/10.1142/9789814460187_0118.

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Mortreuil, F., C. Villeneuve-Faure, L. Boudou, K. Makasheva, and G. Teyssedre. "Charges injection investigation at metal/dielectric interfaces by Kelvin Probe Force Microscopy." In 2016 IEEE International Conference on Dielectrics (ICD). IEEE, 2016. http://dx.doi.org/10.1109/icd.2016.7547650.

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Reports on the topic "Kelvin force probe microscopy"

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Behunin, R., Diego A. Dalvit, R. Decca, C. Genet, I. Jung, A. Lambrecht, A. Liscio, et al. Kelvin probe force microscopy of metallic surfaces used in Casimir force measurements. Office of Scientific and Technical Information (OSTI), July 2014. http://dx.doi.org/10.2172/1136960.

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Duncan, Andrew, Joy McNamara, Michael Morgan, and Paul Korinko. Kelvin probe force microscopy for high-resolution imaging of hydrogen in steel alloys [Poster]. Office of Scientific and Technical Information (OSTI), September 2018. http://dx.doi.org/10.2172/1475273.

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McNamara, J. KELVIN PROBE FORCE MICROSCOPY FOR HIGH-RESOLUTION IMAGING OF HYDROGEN IN STEEL AND ALUMINUM ALLOYS. Office of Scientific and Technical Information (OSTI), October 2019. http://dx.doi.org/10.2172/1572885.

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Solares, Santiago D. Trimodal Tapping Mode Atomic Force Microscopy. Simultaneous 4D Mapping of Conservative and Dissipative Probe-Sample Interactions of Energy-Relevant Materials. Office of Scientific and Technical Information (OSTI), September 2015. http://dx.doi.org/10.2172/1215400.

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Solares, Santiago D. Final Technical Report for Award DESC0011912, "Trimodal Tapping Mode Atomic Force Microscopy: Simultaneous 4D Mapping of Conservative and Dissipative Probe-Sample Interactions of Energy-Relevant Materials”. Office of Scientific and Technical Information (OSTI), September 2017. http://dx.doi.org/10.2172/1393854.

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