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Journal articles on the topic 'Kesterite Absorber'

Author: Grafiati

Published: 5 June 2025

Last updated: 2 August 2025

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1

Scaffidi, Romain, Guy Brammertz, Yibing Wang, et al. "A study of bandgap-graded CZTGSe kesterite thin films for solar cell applications." Energy Advances 2, no. 10 (2023): 1626. https://doi.org/10.1039/d3ya00359k.

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Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> kesterite materials are a sustainable and harmless alternative to conventional Cu(In,Ga)Se<sub>2</sub> (CIGS) and CdTe absorbers for thin-film photovoltaics but are still lacking efficiency. This study presents the realization of bandgap grading in Cu<sub>2</sub>Zn(Sn<sub>1−<em>x</em></sub>Ge<sub><em>x</em></sub>)Se<sub>4</sub> (CZTGSe) kesterite thin films <em>via</em> the incorporation of Ge to partly substitute Sn, and their mutual segregation along the absorber profile. Bandgap values at the front and rear interfaces are,

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2

Estrada-Ayub, J. A., L. Álvarez Contreras, M. Román Aguirre, et al. "Novel Evaporation Process for Deposition of Kesterite Thin Films Synthesized by Solvothermal Method." Advances in Materials Science and Engineering 2017 (2017): 1–8. http://dx.doi.org/10.1155/2017/7905343.

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Kesterite, a quaternary compound of Cu2ZnSnS4, is a promising option as a material absorber to reduce the cost of photovoltaic solar cells. The solvothermal method is a way to synthesize nanoparticles of this material. In this work, once synthesized, particles were deposited on a substrate through evaporation, and their morphological, structural, and optical properties were studied. Results show that changes of precursor ratios during solvothermal synthesis result in a modification of particle morphology but not on its size. The deposition of already synthesized kesterite through evaporation p

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3

Basri, Katrul Nadia, Noriza Ahmad Zabidi, Hasan Abu Kassim, and Ahmad Nazrul Rosli. "Density Functional Theory (DFT) Calculation of Band Structure of Kesterite." Advanced Materials Research 1107 (June 2015): 491–95. http://dx.doi.org/10.4028/www.scientific.net/amr.1107.491.

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The kesterite, Cu2ZnSnS4has a big potential as a future solar material in replacing current material. Although the kesterite and copper indium gallium selenide, CIGS has almost same structure but the constituent elements of kesterite are earth-abundance, cheaper and non-toxic. The chalcogen elements existed inside the kesterite compound are selenium and sulphur, Cu2ZnSnSe4/ Cu2ZnSnS4. Therefore, the structural flexibility of kesterite opens up an avenue to develop light-absorber material with suitable properties and applications. The density functional theory (DFT) has been used to calculate t

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4

Romanyuk, Yaroslav E., Stefan G. Haass, Sergio Giraldo, et al. "Doping and alloying of kesterites." JPhys Energy 1 (August 29, 2019): 044004. https://doi.org/10.1088/2515-7655/ab23bc.

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Attempts to improve the efficiency of kesterite solar cells by changing the intrinsic stoichiometry have not helped to boost the device efficiency beyond the current record of 12.6%. In this light, the addition of extrinsic elements to the Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> matrix in various quantities has emerged as a popular topic aiming to ameliorate electronic properties of the solar cell absorbers. This article reviews extrinsic doping and alloying concepts for kesterite absorbers with the focus on those that do not alter the parent zinc-blende derived kesterite structure. The latest st

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5

Kong, Le, and Jin Xiang Deng. "First-Principles Study on Electronic and Optical Properties of Kesterite and Stannite Cu₂ZnSnS₄ Photovoltaic Absorbers." Materials Science Forum 815 (March 2015): 80–88. http://dx.doi.org/10.4028/www.scientific.net/msf.815.80.

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To find the optical properties of Cu2ZnSnS4 (CZTS) absorber in two crystal structures (kesterite and stannite) which are key factors determining solar cell performance and are based on the electronic structures, a systematical calculation of electronic and optical properties were calculated using density functional theory. The results suggested that the optical properties of CZTS had a rather weak dependence on the (Cu, Zn) cation ordering. Kesterite and stannite CZTS both suited for photovoltaics with large light absorption coefficient ( > 104 cm-1 ) in the visible light region that is the

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6

Nowak, David, Talat Khonsor, Devendra Pareek, and Levent Gütay. "Vapor-Phase Incorporation of Ge in CZTSe Absorbers for Improved Stability of High-Efficiency Kesterite Solar Cells." Applied Sciences 12, no. 3 (2022): 1376. http://dx.doi.org/10.3390/app12031376.

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We report an approach to incorporate Ge into Cu2ZnSnSe4 using GeSe vapor during the selenization step of alloyed metallic precursors. The vapor incorporation slowly begins at T ≈ 480 °C and peaks at 530 °C, resulting in a Ge-based composition shift inside the previously formed kesterite layer. We initially observe the formation of a Ge-rich surface layer that merges into a homogeneous distribution of the incorporated element during the further dwelling stage of the annealing. This approach is very versatile and could be used in many similar fabrication processes for incorporating Ge into CZTSe

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7

Mitzi, David B., Oki Gunawan, Teodor K. Todorov, and D. Aaron R. Barkhouse. "Prospects and performance limitations for Cu–Zn–Sn–S–Se photovoltaic technology." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 371, no. 1996 (2013): 20110432. http://dx.doi.org/10.1098/rsta.2011.0432.

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While cadmium telluride and copper–indium–gallium–sulfide–selenide (CIGSSe) solar cells have either already surpassed (for CdTe) or reached (for CIGSSe) the 1 GW yr −1 production level, highlighting the promise of these rapidly growing thin-film technologies, reliance on the heavy metal cadmium and scarce elements indium and tellurium has prompted concern about scalability towards the terawatt level. Despite recent advances in structurally related copper–zinc–tin–sulfide–selenide (CZTSSe) absorbers, in which indium from CIGSSe is replaced with more plentiful and lower cost zinc and tin, there

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8

Schnabel, Thomas, Mahmoud Seboui, and Erik Ahlswede. "Evaluation of different metal salt solutions for the preparation of solar cells with wide-gap Cu2ZnGeSxSe4-x absorbers." RSC Advances 7, no. 1 (2016): 26–30. https://doi.org/10.1039/C6RA23068G.

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In this work, thin-film solar cells with a kesterite-type Cu<sub>2</sub>ZnGeS<sub>x</sub>Se<sub>4-x</sub> (CZGSSe) absorber were prepared from four different metal salt solutions. Their high band gap makes them an interesting material for tandem solar cells. The structural and morphological properties of the absorbers are compared with an additional focus on the electrical properties of the resulting thin-film solar cells. Efficiencies exceeding 5 % could be demonstrated.

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9

Boerasu, Iulian, and Bogdan Stefan Vasile. "Current Status of the Open-Circuit Voltage of Kesterite CZTS Absorber Layers for Photovoltaic Applications—Part I, a Review." Materials 15, no. 23 (2022): 8427. http://dx.doi.org/10.3390/ma15238427.

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Herein, based on the reviewed literature, the current marketability challenges faced by kesterite CZTS based-solar cells is addressed. A knowledge update about the attempts to reduce the open circuit voltage deficit of kesterite CZTS solar cells will be addressed, with a focus on the impact of Cu/Zn order/disorder and of Se doping. This review also presents the strengths and weaknesses of the most commercially attractive synthesis methods for synthesizing thin kesterite CZTS films for photovoltaic applications.

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10

Kurihara, Masato, Dominik Berg, Johannes Fischer, Susanne Siebentritt, and Phillip J. Dale. "Kesterite absorber layer uniformity from electrodeposited pre-cursors." physica status solidi (c) 6, no. 5 (2009): 1241–44. http://dx.doi.org/10.1002/pssc.200881154.

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11

Wallace, Suzanne K., Jarvist Moore Frost, and Aron Walsh. "Atomistic insights into the order–disorder transition in Cu2ZnSnS4 solar cells from Monte Carlo simulations." Journal of Materials Chemistry A 7, no. 1 (2019): 312–21. http://dx.doi.org/10.1039/c8ta04812f.

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12

Schnabel, T., M. Seboui, and E. Ahlswede. "Evaluation of different metal salt solutions for the preparation of solar cells with wide-gap Cu2ZnGeSxSe4−x absorbers." RSC Advances 7, no. 1 (2017): 26–30. http://dx.doi.org/10.1039/c6ra23068g.

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13

ALITI, Ramadan, Yoganash PUTTHISIGAMANY, and Mimoza RISTOVA. "LI-DOPED CZTS, SYNTHESIZED BY SPIN-COATING, FOR IMPROVED PV CELL PERFORMANCE." Journal of Natural Sciences and Mathematics of UT-JNSM 9, no. 17-18 (2024): 489–97. http://dx.doi.org/10.62792/ut.jnsm.v9.i17-18.p2846.

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In this work we present а comparative study of two photovoltaic cells based on n-type CZTS (Cu2ZnSnS4) kesterite-type thin films, using (a) an undoped pristine CZTS absorber and (b) doped with Li CZTS absorber, both integrated into photovoltaic (PV) cells, incorporating CdS thin film as an n-type buffer layer. The morphological, structural, compositional, optical, and electrical properties of both absorbers CZTS and CZTS:Li were studied by SEM-EDX, XRD, Vis-NIR spectroscopy, Hall-effect, and four-point probe measurements, revealing the impact on the Li-doping. The evaluation of the band gap wa

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14

Küllmey, Tim, Miguel González, Eva M. Heppke, and Beate Paulus. "Calculation for High Pressure Behaviour of Potential Solar Cell Materials Cu2FeSnS4 and Cu2MnSnS4." Crystals 11, no. 2 (2021): 151. http://dx.doi.org/10.3390/cryst11020151.

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Exploring alternatives to the Cu2ZnSnS4 kesterite solar cell absorber, we have calculated first principle enthalpies of different plausible structural models (kesterite, stannite, P4¯ and GeSb type) for Cu2FeSnS4 and Cu2MnSnS4 to identify low and high pressure phases. Due to the magnetic nature of Fe and Mn atoms we included a ferromagnetic (FM) and anti-ferromagnetic (AM) phase for each structural model. For Cu2FeSnS4 we predict the following transitions: P4¯ (AM) →16.3GPa GeSb type (AM) →23.0GPa GeSb type (FM). At the first transition the electronic structure changes from semi-conducting to

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15

Taskesen, Teoman, Devendra Pareek, Janet Neerken, et al. "The effect of excess selenium on the opto-electronic properties of Cu2ZnSnSe4 prepared from Cu–Sn alloy precursors." RSC Advances 9, no. 36 (2019): 20857–64. http://dx.doi.org/10.1039/c9ra02779c.

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This study show the influence of selenium amount during annealing of kesterite on the elemental composition of absorber and on the opto-electronic properties of solar cells. Enhanced carrier collection leads to device efficiencies approaching 12%.

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16

Dale, Phillip J., Monika Arasimowicz, Diego Colombara, Alexandre Crossay, Erika Robert, and Aidan A. Taylor. "Is it Possible to Grow Thin Films of Phase Pure Kesterite Semiconductor? A ZnSe case study." MRS Proceedings 1538 (2013): 83–94. http://dx.doi.org/10.1557/opl.2013.1006.

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ABSTRACTThe kesterite semiconductor Cu2ZnSnS(e)4 is seen as a suitable absorber layer to replace Cu(In,Ga)Se2 in thin film solar cells, if thin film photovoltaics are to be deployed on the terawatt scale. Currently the best devices, and hence the best kesterite absorber layers are grown away from stoichiometry and are zinc rich and copper poor, presumably leading to the formation of ZnS(e). However, it has been shown that secondary phases present in an absorber layer reduce device performance. If growth in Zn rich conditions seems to be mandatory, then any secondary phases formed should be gro

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17

Nowak, David, Talat Khonsor, Devendra Pareek, and Levent Gütay. "Vapor-Phase Incorporation of Ge in CZTSe Absorbers for Improved Stability of High-Efficiency Kesterite Solar Cells." Applied Sciences 12, no. 3 (2022): 1376. https://doi.org/10.3390/app12031376.

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We report an approach to incorporate Ge into Cu2ZnSnSe4 using GeSe vapor during the selenization step of alloyed metallic precursors. The vapor incorporation slowly begins at <em>T</em> = 480 °C and peaks at 530 °C, resulting in a Ge-based composition shift inside the previously formed kesterite layer. We initially observe the formation of a Ge-rich surface layer that merges into a homogeneous distribution of the incorporated element during the further dwelling stage of the annealing. This approach is very versatile and could be used in many similar fabrication processes for incorporat

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18

Schnabel, Thomas, Mahmoud Seboui, Andreas Bauer, et al. "Evaluation of different buffer materials for solar cells with wide-gap Cu2ZnGeSxSe4-x absorbers." RSC Advances 7 (August 8, 2017): 40105–10. https://doi.org/10.1039/C7RA06438A.

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In this work kesterite-type Cu<sub>2</sub>ZnGeS<sub>x</sub>Se<sub>4-x</sub> (CZGSSe) absorbers were coated with four different buffer layer materials: CdS, In<sub>2</sub>S<sub>3</sub>, Zn(O,S) and CdIn<sub>2</sub>S<sub>4</sub>. A detailed electrical characterization of the resulting solar cells was performed. The highest open-circuit voltage and the best band alignment could be reached with Zn(O,S), whereas the CdS buffer gave the best efficiencies of up to 6%, which is the highest reported efficiency for a CZGSSe absorber.

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19

Gong, Yuancai, Yifan Zhang, Qiang Zhu, et al. "Identifying the origin of the Voc deficit of kesterite solar cells from the two grain growth mechanisms induced by Sn2+ and Sn4+ precursors in DMSO solution." Energy & Environmental Science 14, no. 4 (2021): 2369–80. http://dx.doi.org/10.1039/d0ee03702h.

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The large V<sub>oc</sub> deficit of kesterite solar cell mainly comes from the defective surface caused by multi-phase fusion grain growth; direct phase transformation grain growth produces high quality absorber with clean surface and thus high device V<sub>oc</sub>.

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20

Gunder, R., J. A. Márquez-Prieto, G. Gurieva, T. Unold, and S. Schorr. "Structural characterization of off-stoichiometric kesterite-type Cu2ZnGeSe4 compound semiconductors: from cation distribution to intrinsic point defect density." CrystEngComm 20, no. 11 (2018): 1491–98. http://dx.doi.org/10.1039/c7ce02090b.

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The substitution of Ge<sup>4+</sup> for Sn<sup>4+</sup> in Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> (CZTSSe) kesterite-type absorber layers for thin film solar cells has been proven to enhance the opto-electronic properties of the material.

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21

B., NDIAYE, M. KEITA E., NDIAYE M., SAGNA A., MBOW B., and SENE C. "Simulation and Optimization of CZTS-based Photovoltaic Devices: Effect of Deposition Temperature on Cell performance." European Journal of Advances in Engineering and Technology 10, no. 5 (2023): 9–14. https://doi.org/10.5281/zenodo.10636569.

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<strong>ABSTRACT </strong> Kesterite Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) thin absorber layers are used in PV devices particularly in the CIGS solar cell like-structure where the CIGS component is replaced by the earth-abundant and non-toxic CZTS absorber layer. In this theoretical study we investigate the effect of the growth temperature on the quantum efficiency of the CZTS-based solar cell. For this purpose, Cu<sub>2</sub>ZnSnS<sub>4</sub> thin films grown using the simple and low-cost Close Spaced Vapor Transport (CSVT) process are considered. Numerical models based on solving continuity

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22

Masanawa, Aliyu A., Alhassan Shuaibu, Muhammed M. Aliyu, and Ismail Magaji. "First Principle Investigation on Electronic Properties of Cationic and Anionic CO-Alloyed Cu2ZnSnS4 Kesterite Material." Materials for third generation solar cells and other energy related applications 02, no. 03 (2022): 13–16. http://dx.doi.org/10.47514/phyaccess.sp.iss.2022.1.003.

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The primary goal of kesterite alloying is to allow for fine tweaking of the material's characteristics for advanced device engineering. Additionally, it is seen as a viable solution to inherent kesterite absorber difficulties such as the Cu/Zn disorder or Sn multivalency. The most interesting alloying elements for kesterite are Ag replacing Cu, Cd replacing Zn, and Ge replacing Sn for cationic substitution, as well as Se replacing S for anionic substitution. This research work investigates the effect of alloying CZTS with Silver (Ag) (Cation) and Selenium (Se) (Anion) theoretically using Densi

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23

Pareek, Devendra, K. R. Balasubramaniam, and Pratibha Sharma. "Synthesis and characterization of kesterite Cu2ZnSnTe4via ball-milling of elemental powder precursors." RSC Advances 6, no. 73 (2016): 68754–59. http://dx.doi.org/10.1039/c6ra09112a.

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Cu<sub>2</sub>ZnSnTe<sub>4</sub> was synthesized using mechano-chemical route from its elemental precursors. A homologous series of kesterite light absorber material Cu<sub>2</sub>ZnSnX<sub>4</sub> (X: S, Se, Te) can be used for realization of multi-junction solar cells.

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24

Buffiere, Marie, Abdel Aziz El Mel, Nick Lenaers, et al. "Surface Cleaning and Passivation of Chalcogenide Thin Films Using S(NH₄)₂ Chemical Treatment." Solid State Phenomena 219 (September 2014): 320–23. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.320.

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Chalcopyrite ternary and kesterite quaternary thin films, such as Cu (In,Ga)(S,Se)2and Cu2ZnSn (S,Se)4generically referred to as CIGSSe and CZTSSe, respectively, have become the subject of considerable interest and study for semiconductor devices in recent years [1,2]. These materials are of particular interest for use as an absorber layer in photovoltaic devices. In thin film solar cells, the p-type CIGSSe or CZTSSe layer is combined with an n-type semiconductor thin film such as CdS buffer layer to form the p-n heterojunction of the device. The synthesis process of the CIGSSe or CZTSSe absor

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25

Niu, Chuanyou, Yuancai Gong, Ruichan Qiu, et al. "11.5% efficient Cu2ZnSn(S,Se)4 solar cell fabricated from DMF molecular solution." Journal of Materials Chemistry A 9, no. 22 (2021): 12981–87. http://dx.doi.org/10.1039/d1ta01871j.

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The weak Sn–O coordination bonds in Sn(DMF)<sub>2</sub>Cl<sub>4</sub> result in the formation of a kesterite phased (Cu<sub>2</sub>ZnSnS<sub>4</sub>) precursor film and thus fabrication of a highly efficient Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> absorber from DMF solution.

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26

Rondón Almeyda, Carlos Eduardo, Monica Andrea Botero Londoño, and Rogelio Ospina Ospina. "Finite Element Analysis of An Evaporation System to Synthesize Kesterite thin Films." Revista Ingenierías Universidad de Medellín 20, no. 38 (2021): 51–66. http://dx.doi.org/10.22395/rium.v20n38a3.

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Currently, there is an interest within the scientific community in thin-film solar cells with a Kesterite (Cu2ZnSnS4) type absorber layer, since they report a theoretical efficiency greater than 32 %. The synthesis of Kesterites by evaporation has allowed for efficiencies at the laboratory level of 11.6 %. Although these are good results, the design of the evaporation chamber and the distribution of the electrodes is essential to control synthesis parameters and evaporate each precursor in the corresponding stage. This project seeks to design an evaporation chamber that can achieve a vacuum of

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27

Schorr, S., M. Tovar, A. Weber, H. Krauth, V. Honkimaki, and H. Schock. "Kesterite – an alternative absorber material for thin-film solar cells." Acta Crystallographica Section A Foundations of Crystallography 64, a1 (2008): C59—C60. http://dx.doi.org/10.1107/s0108767308098103.

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28

Pani, Bhagyashree, Sujit Pillai, and Udai P. Singh. "Kesterite based thin film absorber layers from ball milled precursors." Journal of Materials Science: Materials in Electronics 27, no. 12 (2016): 12412–17. http://dx.doi.org/10.1007/s10854-016-5205-y.

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29

Schnabel, Thomas, Mahmoud Seboui, and Erik Ahlswede. "Band gap tuning of Cu2ZnGeSxSe4-x absorbers for thin-film solar cells." Energies 10 (November 9, 2017): 1813. https://doi.org/10.3390/en10111813.

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In this work, kesterite-type Cu2ZnGeSxSe4-x absorbers were prepared by a two-step process for use in thin-film solar cells. Their high band gap makes them an interesting candidate as top cells in multijunction solar cells. However, an exact tuning of the band gap is essential. Therefore, for the first time, the [S]/([S] + [Se]) ratio was controlled via addition of a variable amount of GeS during the annealing step, which allowed precise control of the band gap between 1.5 and 1.7 eV. The changes in morphology and crystallinity of the absorber are discussed in detail. An additional focus was di

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30

Jimenez-Arguijo, Alex, Medaille Axel Gon, Alejandro Navarro-Güell, et al. "Setting the baseline for the modelling of Kesterite solar cells: The case study of tandem application." Solar Energy Materials and Solar Cells 251 (March 7, 2023): 112109. https://doi.org/10.1016/j.solmat.2022.112109.

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The Kesterite solar cells research landscape is at a crossroad and despite a much improved understanding of the limitations of this class of materials, the current performance deficit contrasts with the several other thin film technologies reaching conversion efficiency values well above 20%. It is more important than ever for the Kesterite community to collaborate directly or indirectly and data sharing is an essential building block in that regard. This work proposes a detailed set of modelling baselines and parameters, based on a consistent set of properties obtained wit

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Messei, N., M. S. Aida, A. Attaf, N. Hamani, and S. Laznek. "Numerical simulation of the effect of gradual substitution of sulfur with selenium or tin with germanium in Cu2ZnSnS4 absorber layer on kesterite solar cell efficiency." Chalcogenide Letters 20, no. 2 (2023): 165–75. http://dx.doi.org/10.15251/cl.2023.202.165.

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To enhance the efficiency of kesterite Cu2ZnSnS4 solar cell, different gradient strategies are investigated. Absorber layer gradient is obtained by partial substitution of sulfur with selenium or tin with germanium. The PV Parameters are calculated using the SCAPS1D program. The effect of the front, back, and double gradient on the cell parameters was investigated. We proposed also the fully graded gap absorber layer profile. The opencircuit voltage has increased to 1.040V, the fill factor has increased to 71.69%, and the efficiency has exceeded 22.95%. In contrast to other types of gradients,

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32

Liu, Fangyang, Shanshan Shen, Fangzhou Zhou, et al. "Kesterite Cu2ZnSnS4thin film solar cells by a facile DMF-based solution coating process." Journal of Materials Chemistry C 3, no. 41 (2015): 10783–92. http://dx.doi.org/10.1039/c5tc01750e.

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33

Messei, N. "Influence of absorber layer gradual gap profile on Cu2ZnSn(S1-Y SeY )4 solar cell efficiency: Numerical study." Journal of Fundamental and Applied Sciences 13, no. 1 (2021): 385–99. http://dx.doi.org/10.4314/jfas.v13i1.20.

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The gradual substitution of sulfur atoms (S) by selenium atoms (Se) in Cu2ZnSn(S1-y Sey )4 compounds causes a linear increase in the optical band-gap. For this reason, those compounds are suitable to implement band-gap engineering in compositionally graded solar cells. In this paper, we have worked to take advantage of this feature to enhance the performances of the basic uniform Kesterite and Stannite CZTS1–ySey solar cells. The influence of Tow grading profile was investigated: fully graded (a) and double graded (b). Fully graded Cell showed better parameters than compositionally uniform cel

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34

Dell'Oro, Ruben, Roberto Della Vedova, Stefano Marchionna, and Luca Magagnin. "Co-Electrodeposition of Metallic Precursors for Cd-Doped Cu₂ZnSnS₄ (CZCTS) Kesterite Absorber for Photoelectrochemical Water Splitting." ECS Meeting Abstracts MA2022-02, no. 22 (2022): 934. http://dx.doi.org/10.1149/ma2022-0222934mtgabs.

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Electrodeposition is widely studied in the fabrication of semiconductors for solar application, because of the low cost and easy scalability of this technique. For instance, in the last decades large effort has been dedicated to the electrodeposition of Cu2ZnSnS4 (CZTS) through different approaches, including either direct co-electrodeposition of the sulfide, the deposition of metallic alloy precursors or by stacked elemental layer, depositing Cu, Zn and Sn in sequence, then converting it into kesterite with thermal treatment in sulfur atmosphere.1–4 While being a promising alternative to CIGS

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35

Chen, Shiyou, X. G. Gong, Aron Walsh, and Su-Huai Wei. "Defect physics of the kesterite thin-film solar cell absorber Cu2ZnSnS4." Applied Physics Letters 96, no. 2 (2010): 021902. http://dx.doi.org/10.1063/1.3275796.

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36

Qu, Yongtao, See Wee Chee, Martial Duchamp, et al. "Real-Time Electron Nanoscopy of Photovoltaic Absorber Formation from Kesterite Nanoparticles." ACS Applied Energy Materials 3, no. 1 (2019): 122–28. http://dx.doi.org/10.1021/acsaem.9b01732.

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37

Errafyg, Abdeljalil, Naoufal Ennouhi, Yassine Chouimi, and Zouheir Sekkat. "Influence of Copper and Tin Oxidation States on the Phase Evolution of Solution-Processed Ag-Alloyed CZTS Photovoltaic Absorbers." Energies 17, no. 24 (2024): 6341. https://doi.org/10.3390/en17246341.

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Kesterite-based semiconductors, particularly copper–zinc–tin–sulfide (CZTS), have garnered considerable attention as potential absorber layers in thin-film solar cells because of their abundance, nontoxicity, and cost-effectiveness. In this study, we explored the synthesis of Ag-alloyed CZTS (ACZTS) materials via the sol–gel method and deposited them on a transparent fluorine-doped tin oxide (FTO) back electrode. A key challenge is the selection and manipulation of metal–salt precursors, with a particular focus on the oxidation states of copper (Cu) and tin (Sn) ions. Two distinct protocols, v

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Rudzikas, Matas, Saulius Pakalka, Jolanta Donėlienė, and Arūnas Šetkus. "Exploring the Potential of Pure Germanium Kesterite for a 2T Kesterite/Silicon Tandem Solar Cell: A Simulation Study." Materials 16, no. 18 (2023): 6107. http://dx.doi.org/10.3390/ma16186107.

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Recently, the development of tandem devices has become one of the main strategies for further improving the efficiency of photovoltaic modules. In this regard, combining well-established Si technology with thin film technology is one of the most promising approaches. However, this imposes several limitations on such thin film technology, such as low prices, the absence of scarce or toxic elements, the possibility to tune optical properties and long lifetime stability. Therefore, to show the potential of kesterite/silicon tandems, in this work, a 2 terminal (2T) structure using pure germanium k

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Aydin, Remzi, and Idris Akyuz. "Two-stage production and characterization of Cu-poor kesterite CZTS absorber layers." Optik 200 (January 2020): 163407. http://dx.doi.org/10.1016/j.ijleo.2019.163407.

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Márquez, José, Helena Stange, Charles J. Hages, et al. "Chemistry and Dynamics of Ge in Kesterite: Toward Band-Gap-Graded Absorbers." Chemistry of Materials 29, no. 21 (2017). https://doi.org/10.1021/acs.chemmater.7b03416.

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The selenization of metallic Cu-Zn-Sn-Ge precursors is a promising route for the fabrication of low-cost and efficient kesterite thin film solar cells. Nowadays, efficiencies of kesterite solar cells are still below 13 %. For Cu(In,Ga)Se<sub>2</sub> solar cells, the formation of compositional gradients along the depth of the absorber layer has been demonstrated to be a key requirement for producing thin film solar cells with conversion efficiencies above the 22 % level. No clear understanding has been reached so far about how to produce these gradients in an efficient manner for kesterite comp

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Bart, Vermang Guy Brammertz Marc Meuris Thomas Schnabel Erik Ahlswede Leo Choubrac Sylvie Harel Christophe Cardinaud Ludovic Arzel Nicolas Barreau Joop van Deelen Pieter-Jan Bolt Patrice Bras Yi Ren Eric Jaremalm Samira Khelifi Sheng Yang Johan Lauwaert Maria Batuk Joke Hadermann Xeniya Kozina Evelyn Handick Claudia Hartmann Dominic Gerlach Asahiko Matsuda Shigenori Ueda Toyohiro Chikyow Roberto Félix Yufeng Zhang Regan G. Wilks Marcus Bär. "Wide band gap kesterite absorbers for thin film solar cells: potential and challenges for their deployment in tandem devices." Sustainable Energy & Fuels, June 24, 2019. https://doi.org/10.1039/c9se00266a.

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This work reports on developments in the field of wide band gap Cu<sub>2</sub>ZnXY<sub>4</sub> (with X = Sn, Si or Ge, and Y = S, Se) kesterite thin film solar cells. An overview on recent developments and the current understanding of wide band gap kesterite absorber layers, alternative buffer layers, and suitable transparent back contacts is presented. Cu<sub>2</sub>ZnGe(S,Se)<sub>4</sub> absorbers with absorber band gaps up to 1.7 eV have been successfully developed and integrated into solar cells. Combining a CdS buffer layer prepared by an optimized chemical bath deposition proce

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Wang, Yuanyuan, Jiaqi Wang, Zucheng Wu, et al. "Spin‐Coating Se in Precursor to Improve Absorber Crystallinity and Reduce Defects Enabling 13.57% Efficiency for Kesterite Solar Cells." Solar RRL, January 2025. https://doi.org/10.1002/solr.202400735.

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Poor crystallinity is a common problem of kesterite absorbers based on non‐hydrazine solution method, which obstructs charge transfer and affects photovoltaic performance of the thin‐film devices, especially the open‐circuit voltage (VOC). Se diffusion is often insufficient during the crystal growth of kesterite absorber, resulting in uneven selenization reaction. Herein, Se molecule is introduced into kesterite precursor film to promote the absorber crystallinity while preventing the formation of a thick Mo(Se,S)2 layer. It is found that after Se‐introduction treatment, Se element distributes

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Kunal, J. Tiwari, Fonoll Rubio Robert, Giraldo Sergio, et al. "Defect depth-profiling in kesterite absorber by means of chemical etching and surface analysis." February 28, 2021. https://doi.org/10.5281/zenodo.6411672.

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A method to probe the depth morphology, defect profile and possible secondary phases in a thin fil semiconductor is presented, taking a standard Kesterite film as an example. Using a top-down approach based on a previously reported controlled Methanol-Br2 chemical etching, well-defined slabs of a state of the art Kesterite absorber are fabricated. The analysis of their morphology both by Scanning Electron Microscopy and 3D optical Profilometry reveals the extent of a previously reported poor film morphology toward the back interface, and we are able to determine that more than 50% of a standar

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Cabas-Vidani, Antonio, Stefan Haass, Christian Andres, et al. "High-Efficiency (LixCu1−x)2ZnSn(S,Se)4 Kesterite Solar Cells with Lithium Alloying." October 16, 2018. https://doi.org/10.1002/aenm.201801191.

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The performance-boosting effect of alkali treatments is well known for chalcogenide thin-film solar cells based on Cu(In,Ga)Se2 (CIGS) and Cu2ZnSn(S,Se)4 (CZTSSe–kesterite) absorbers. In contrast to heavier alkali elements, lithium is expected to alloy with the kesterite phase leading to the solid solution (Li<em>x</em>Cu1−<em>x</em>)2ZnSn(S,Se)4 (LCZTSSe), which offers a way of tuning the semiconductor bandgap by changing the ratio Li/(Li+Cu). Here is presented an experimental series of solution-processed LCZTSSe with lithium fraction Li/(Li+Cu) ranging from <em>x </em>= 0 to 0.12

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Wang, Jinlin, Jiangjian Shi, Kang Yin, et al. "Pd(II)/Pd(IV) redox shuttle to suppress vacancy defects at grain boundaries for efficient kesterite solar cells." Nature Communications 15, no. 1 (2024). http://dx.doi.org/10.1038/s41467-024-48850-9.

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AbstractCharge loss at grain boundaries of kesterite Cu2ZnSn(S, Se)4 polycrystalline absorbers is an important cause limiting the performance of this emerging thin-film solar cell. Herein, we report a Pd element assisted reaction strategy to suppress atomic vacancy defects in GB regions. The Pd, on one hand in the form of PdSex compounds, can heterogeneously cover the GBs of the absorber film, suppressing Sn and Se volatilization loss and the formation of their vacancy defects (i.e. VSn and VSe), and on the other hand, in the form of Pd(II)/Pd(IV) redox shuttle, can assist the capture and exch

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Nowak, David, Teoman Taskesen, Devendra Pareek, Timo Pfeiffelmann, Ulf Mikolajczak, and Levent Gütay. "Tuning of Precursor Composition and Formation Pathway of Kesterite Absorbers Using an In-Process Composition Shift: A Path toward Higher Efficiencies?" July 11, 2021. https://doi.org/10.1002/solr.202100237.

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This work reports a growth process for tuning the formation pathway and final composition of kesterite Cu2ZnSnSe4 (CZTSe) thin film absorbers. By adjusting the as-grown composition of the precursor, the kesterite formation can be started in a Cu-rich, stoichiometric, or Cu-poor environment. During the hightemperature stage of the annealing process, incorporation or loss of SnSe2–x vapor at the layer is used to achieve an in-process composition shift during further kesterite growth (e.g., Cu-rich to Cu-poor/Cu-poor toward Cu-rich). This approach partially decouples the composition of the

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Payno, David, Samrana Kazim, Manuel Salado, and Shahzada Ahmad. "Sulfurization temperature effects on crystallization and performance of superstrate CZTS solar cells." June 29, 2021. https://doi.org/10.5281/zenodo.5041735.

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Kesterite based on Cu<sub>2</sub>ZnSnS<sub>4</sub> composition are considered as promising absorber material for the next generation of photovoltaics due to raw materials abundance and low toxicity. Developing a superstrate architecture using kesterite as an absorber could be the key to a better performance, which allows new ways of engineering the formation of a kesterite thin film. In this work, we study the effects of the sulfurization temperature on the crystallization of kesterite film when is fabricated in a superstrate architecture, and how this affects the performance of a solar cell.

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Haass, S. G., C. Andres, R. Figi, et al. "Effects of potassium on kesterite solar cells: Similarities, differences and synergies with sodium." January 30, 2018. https://doi.org/10.1063/1.5013114.

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Addition of alkali dopants is essential for achieving high-efficiency conversion effi- ciencyof thinfilmsolar cells basedonchalcogenide semiconductors like Cu(In,Ga)Se2 (CIGS) and Cu2ZnSn(S,Se)4 (CZTSSe also called kesterite). Whereas the treatment with potassium allows boosting the performance of CIGS solar cells as compared to the conventional sodium doping, it is debated if similar effects can be expected for kesterite solar cells. Here the influence of potassium is investigated by introducing the dopant during the solution processing of kesterite absorbers. It is confirmed that the presenc

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Susan, Schorr, Gurieva Galina, Guc Maxim, et al. "Point defects, compositional fluctuations, and secondary phases in non-stoichiometric kesterites." December 10, 2019. https://doi.org/10.1088/2515-7655/ab4a25.

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The efficiency of kesterite-based solar cells is limited by various non-ideal recombination paths, amongst others by a high density of defect states and by the presence of binary or ternary secondary phaseswithin the absorber layer. Pronounced compositional variations and secondary phase segregation are indeed typical features of non-stoichiometric kesteritematerials.Certainly kesterite-based thin film solar cells with an offstoichiometric absorber layer composition, especially Cu-poor/Zn-rich, achieved the highest efficiencies, but deviations fromthe stoichiometric composition lead to the for

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Xu, Xiao, Jiazheng Zhou, Kang Yin, et al. "Controlling Selenization Equilibrium Enables High-Quality Kesterite Absorbers for Efficient Solar Cells." Nature Communications 14, no. 1 (2023). http://dx.doi.org/10.1038/s41467-023-42460-7.

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AbstractKesterite Cu2ZnSn(S, Se)4 is considered one of the most competitive photovoltaic materials due to its earth-abundant and nontoxic constituent elements, environmental friendliness, and high stability. However, the preparation of high-quality Kesterite absorbers for photovoltaics is still challenging for the uncontrollability and complexity of selenization reactions between metal element precursors and selenium. In this study, we propose a solid-liquid/solid-gas (solid precursor and liquid/vapor Se) synergistic reaction strategy to precisely control the selenization process. By pre-depos

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