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Journal articles on the topic 'La doped PZT'

Author: Grafiati

Published: 4 June 2021

Last updated: 18 February 2022

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1

Benhadjala, Warda, Gwenael Le Rhun, Christel Dieppedale, et al. "Sol-gel doped-PZT thin films for integrated tunable capacitors." International Symposium on Microelectronics 2015, no. 1 (2015): 000256–61. http://dx.doi.org/10.4071/isom-2015-wa41.

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Integrated metal-insulator-metal (MIM) capacitors using sol-gel PZT doped with lanthanum (La, PLZT), manganese (Mn, PMZT) and niobium (Nb, PNZT) were successfully processed and characterized for tunable applications. Dielectric properties of doped-PZT were investigated and compared to those of pure PZT. Wafer-level measurements were conducted with a particular attention on tunability evaluation under DC bias voltage. Tunability, leakage current density and breakdown voltage of pure PZT thin films were 77.6% (i.e. 4.5:1) at 10kHz/10V, 4.8.10−5 A/cm2 at 870kV and 37.5V (i.e. 1.63 MV/cm) respectively. The breakdown voltage increased by 25% with La doping and by 50% with Nb and Mn. The lowest leakage current were achieved by PNZT (7.0.10−7 A/cm2 at 870kV) while PMZT films exhibited an outstanding tunability reaching 88.8% (i.e. 8.9:1) at 100 kHz and 20V. Enhanced performances of the developed doped-PZT were compared to the state of the art. Results indicate that electrical properties of sol-gel doped-PZT achieved those of conventionally deposited materials. It is noteworthy that obtained PMZT tunability is among the highest ones reported in the literature for PZT-derived thin films but also for other piezoelectric materials.

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2

Benhadjala, Warda, Florence Sonnerat, Jennifer Guillaume, et al. "Highly tunable Mn-doped PZT thin films for integrated RF devices." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, DPC (2015): 002095–127. http://dx.doi.org/10.4071/2015dpc-tha33.

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Modern RF systems have triggered an important and urgent demand for inexpensive voltage controlled capacitors used for a wide range of applications such as tunable antennas or low-noise voltage-controlled oscillators (VCO). Ferroelectric materials have received considerable interest for electrically tunable dielectrics due to their high dielectric constant and large dielectric nonlinearity under dc bias field. Lead zirconate titanate (PZT) ceramics which have been under intense investigation for various industrial domains including micro-electro-mechanical systems (MEMS), non-volatile memories, and high-k capacitors, are especially well-known candidate materials due to their unequalled ferroelectric properties and stability in device operating ranges. However, reported voltage tunability of PZT films is relatively low (~35%@4GHz) and remains insufficient for microwave tunable devices. Therefore, much attention has been focused on the PZT modification by adding a small amount of dopants. Shao et al., studied strontium-doped PZT (PSZT) thin films and achieved a tunability of 48% @1MHz. More recently, Hu et al. reported a tunability of 65%@10kHz for lanthanum-modified PZT (PLZT) films. In the presented study, effect of manganese (Mn) doping on electrical properties of PZT (PMZT) thin films has been investigated. Metal/insulator/metal (MIM) capacitors using PZT-based thin films and ruthenium (Ru) top electrodes were processed on platinized (Pt) silicon wafers by a sol gel method. Dielectric properties of PMZT thin films were studied by varying the dopant amount and compared to those of pure PZT layers. At this end, on-wafer electrical measurements were conducted with a particular attention on leakage current characterization and RF measurements under DC bias voltage. We have shown that leakage current density decreased from 6.5 μA/cm2 to 1 μA/cm2 at 850kV/cm by doping PZT with Mn. Observed conduction mechanisms will be discussed in detail in the full-length paper. Moreover, developed PZT-based thin films exhibit high dielectric strengths achieving 2.1MV/cm and outstanding tunability as high as 85% (~7:1) @1GHz at bias voltage of 20V. Thus, PMZT tunability is among the highest ones reported in the literature for PZT-derived thin films but also for other piezoelectric materials. Indeed, in comparison, the tunability of BST-based materials, typically studied for voltage tunable applications, does not exceed 5:1. These remarkable results indicate that Mn-doped PZT thin films are promising candidates for RF tunable capacitors.

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3

Myers, Todd, Parag Banerjee, Susmita Bose, and Amit Bandyopadhyay. "Layered lead zirconate titanate and lanthanum-doped lead zirconate titanate ceramic thin films." Journal of Materials Research 17, no. 9 (2002): 2379–85. http://dx.doi.org/10.1557/jmr.2002.0348.

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The physical layering of sol-gel-derived lead zirconate titanate (PZT) 52/48 and lanthanum-doped PZT (PLZT) 2/52/48 on platinized silicon substrates was investigated to determine if the ferroelectric properties and fatigue resistance could be influenced by different layering sequences. Monolithic thin films of PZT and PLZT were characterized to determine their ferroelectric properties. Sandwich structures of Pt/PZT/PLZT/PLZT/PZT/Au and Pt/PLZT/PZT/PZT/PLZT/Au and alternating structures of Pt/PZT/PLZT/PZT/PLZT/Au and Pt/PLZT/PZT/PLZT/PZT/Au were then fabricated and characterized. X-ray photoelectron spectroscopy depth profiles revealed that the layering sequence remained intact up to 700 °C for 45 min. It was found that the end layers in the multilayered films had a significant influence on the resulting hysteresis behavior and fatigue resistance. A direct correlation of ferroelectric properties and fatigue resistance can be made between the data obtained from the sandwiched structures and their end-layer monolithic thin film counterparts. Alternating structures also showed an improvement in the fatigue resistance while the polarization values remained between those for PZT and PLZT thin films.

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4

Tuan Ab Rashid, Tuan Nur Izzah, Zainal Arifin Ahmad, Julie Juliewatty Mohamed, and Hasmaliza Mohamad. "Fabrication of Lanthanum and Strontium Doped PZT Ceramics Using Solid State Reaction Method." Materials Science Forum 888 (March 2017): 62–65. http://dx.doi.org/10.4028/www.scientific.net/msf.888.62.

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Lead Zirconate Titanate (PZT) undoped and doped was prepared by using solid state reaction method. In this paper, PZT is doped with another elements with is La3+ and Sr2+ in order to enhance the properties of PZT. The samples were prepared via high planetary mill which is can skip the calcination process that can cause of PbO loss during firing. With the help of x-ray diffraction (XRD) and scanning electron microscopy (SEM), the formation of perovskite structure into newly modified ceramics was investigated and the grain growth of pure PZT and doped PZT were also investigated which is can enhance their properties which may be suitable for possible device applications.

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5

Byun, Jin Moo, Jeong Sun Han, Jae Hyoung Park, Seong Eui Lee, and Hee Chul Lee. "A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method." Materials Science Forum 663-665 (November 2010): 650–53. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.650.

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This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

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6

Lee, Eon Jong, and Byeong Woo Lee. "Influence of Complex Additives on the Piezoelectric and Dielectric Properties of PZT Ceramics." Advanced Materials Research 1110 (June 2015): 259–62. http://dx.doi.org/10.4028/www.scientific.net/amr.1110.259.

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The effects of the complex donor and acceptor additives on the microstructure, piezoelectric and dielectric properties of PZT (Zr/Ti=53/47) ceramics were studied. A complex doping with the soft (La+3 and Nb+5) and hard (Fe+3 and/or Mn(+2,+3 or +4)) ions has been adopted. The complex doping of two or more elements is expected to combine the properties of donor and/or acceptor doped PZT, which could exhibit better stability or improved piezoelectric properties than those of the single element doped PZT. The complex doping caused various compensation effects for the piezoelectric properties of PZT ceramics; Mn addition to the La/Nb and Fe doped PZT composition led to the improved piezoelectric properties, i.e., enhanced Qm with remaining considerably high kP.

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7

Celi, L. A., A. C. Caballero, M. Villegas, J. A. Eiras, C. Moure, and J. F. Fernández. "Formación de fases en materiales cerámicos PZT dopados con fósforo." Boletín de la Sociedad Española de Cerámica y Vidrio 40, no. 2 (2001): 119–24. http://dx.doi.org/10.3989/cyv.2001.v40.i2.752.

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8

Sakamoto, W. K., P. Marin-Franch, and D. K. Das-Gupta. "Characterization and application of PZT/PU and graphite doped PZT/PU composite." Sensors and Actuators A: Physical 100, no. 2-3 (2002): 165–74. http://dx.doi.org/10.1016/s0924-4247(02)00042-0.

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9

Zhang, Q., and R. W. Whatmore. "Sol-gel PZT and Mn-doped PZT thin films for pyroelectric applications." Integrated Ferroelectrics 41, no. 1-4 (2001): 43–50. http://dx.doi.org/10.1080/10584580108012806.

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10

Zhang, Q., and R. W. Whatmore. "Sol-gel PZT and Mn-doped PZT thin films for pyroelectric applications." Journal of Physics D: Applied Physics 34, no. 15 (2001): 2296–301. http://dx.doi.org/10.1088/0022-3727/34/15/308.

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11

Guan, Xinchun, Yudong Zhang, Hui Li, and Jinping Ou. "PZT/PVDF composites doped with carbon nanotubes." Sensors and Actuators A: Physical 194 (May 2013): 228–31. http://dx.doi.org/10.1016/j.sna.2013.02.005.

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12

Ketsuwan, P., A. Prasatkhetragarn, A. Ngamjarurojana, S. Ananta, and R. Yimnirun. "Dielectric Aging of Cr-Doped PZT Ceramics." Integrated Ferroelectrics 149, no. 1 (2013): 67–74. http://dx.doi.org/10.1080/07315171.2013.853561.

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13

Melnick, B. M., M. C. Scott, C. A. Paz De Araujo, L. D. McMillan, and T. Mihara. "Anomalous fatigue behavior in Zn doped PZT." Integrated Ferroelectrics 3, no. 4 (1993): 293–300. http://dx.doi.org/10.1080/10584589308216684.

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14

Ping, Wu, and Kang Lin. "Material and detector of PZT doped Bi." International Journal of Infrared and Millimeter Waves 14, no. 8 (1993): 1689–92. http://dx.doi.org/10.1007/bf02096226.

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15

Dixit, A. V., N. R. Rajopadhye, and S. V. Bhoraskar. "Secondary electron emission of doped PZT ceramics." Journal of Materials Science 21, no. 8 (1986): 2798–802. http://dx.doi.org/10.1007/bf00551492.

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16

Chang, Jhing-Fang, and Seshu B. Desua. "Effects of dopants in PZT films." Journal of Materials Research 9, no. 4 (1994): 955–69. http://dx.doi.org/10.1557/jmr.1994.0955.

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Undoped and lanthanide (La and Nd) doped Pb(ZrxTi1-x)03, i.e., PZT, ferroelectric thin films were prepared by metallorganic decomposition (MOD) and spin-coating. The precursors for making the undoped PZT films were derived from lead acetate, zirconium n-propoxide, and titanium isopropoxide. In addition, lanthanum acetylacetonate and neodymium acetate were introduced into the precursor solution to accomplish the doping of the corresponding elements. Both undoped and doped PZT films were coated onto Pt/Ti/Si02/Si and single-crystal sapphire substrates to various thicknesses and annealed at a range of temperatures and times. The effects of lanthanide dopants in PZT films were studied with regard to microstructure, Curie temperatures, crystal distortion, optical properties, and electrical properties. The results indicate that the addition of La and Nd dopants tends to enhance perovskite phase formation and improve the packing densities and electrical properties of PZT films.

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17

Aftab, S., H. Nawaz, M. S. Mirza, M. Shoaib, and M. Siddiq. "Piezoelectricity in 0-3 PZT-PVDF Nano Composites Prepared via a Modified Solution Casting Process." Key Engineering Materials 510-511 (May 2012): 520–26. http://dx.doi.org/10.4028/www.scientific.net/kem.510-511.520.

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0-3 nanocomposites of PVDF with varying volume percents of strontium doped PZT have been synthesized using a combination of a modified solution casting process and the hot press technique. The nanocrystalline PZT used prepared from the sol gel route and was in the calcined state. An increase in the volume percent of PZT caused an increase in the dielectric constant, dielectric loss and piezoelectric charge coefficients. The experimental dielectric constants gave a perfect fit to the theoretical Furukawa model. However, no significant trend is perceived for the dielectric loss. SEM and XRD aided in determining the morphology and the crystalline phases in PVDF, PZT and PVDF/PZT composite. TG/DSC was done to confirm the percentage crystallinity of PVDF. A comparison with samples prepared from the conventional solution casting process has also been given. Composites prepared from the modified solution casting process using nanocrystalline strontium doped PZT give better piezoelectric properties as compared to earlier works.

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18

BOONYUEN, S., L. PDUNGSAP, P. WINOTAI, T. SUDYOADSUK, and P. PETCHPONG. "PROPERTIES OF GADOLINIUM-DOPED PZT (Zr:Ti=52:48)." International Journal of Modern Physics B 16, no. 23 (2002): 3515–25. http://dx.doi.org/10.1142/s0217979202012165.

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PZT(Zr:Ti=52:48) ceramics can be modified by Gd 3+, giving compositions Pb 1-x Gd x- ( Zr 0.52 Ti 0.48)1-x/4 O 3 with x = 0.00, 0.01, 0.5, 1, 2, 6 and 10 mole percent. X-ray diffraction patterns show that all PGZT samples are of tetragonal structure and the highest doping should be no more than 2 mole percent Gd at which impurity unreacted oxides start to appear. ESR spectra of PGZT's indicate that Gd 3+ can enter both A and B sites of the perovskite structure instead of only A site as widely believed. As a result, the tetragonality (c/a ratio) first increases and reaches a maximum at x ≅ 0.8 mole percent and drops as Gd 3+ enters more A sites. The doping should, however be limited to one mole percent as overdoping proves detrimental to the dielectric and piezoelectric properties of PGZT. The dielectric constant (1 kHz) of the poled samples reaches a maximum value of 1150 at x = 0.02 while the largest d33 value of 160 pC/N is achieved at only lightly doped 0.01 mole percent. Furthermore, the Gd doping has a drastic effect on Qm and the dissipation factor DF — the former drops sharply while the latter increases with x.

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19

Zhang, Tao, Min Li, Ting Liu, Bin Sun, and Sheng Nan Zhou. "Dielectric Property of PZT Thin Films Doped with PMnN." Advanced Materials Research 569 (September 2012): 35–38. http://dx.doi.org/10.4028/www.scientific.net/amr.569.35.

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The high piezoelectricity and high mechanical quality factor thin films are very important for the fabrications of micro devices. The Pb(Zrx,Ti1-x)O3(PZT) thin films own high piezoelectricity, however, its mechanical quality factor is small. The proper doping of Pb(Mn1/3,Nb2/3)O3(PMnN) will perfectly improve the mechanical quality of the films. However, the doping of PMnN will change the dielectric property of PZT thin films, and so it’s very necessary to investigate the dielectric property of PZT thin films doped with different ratio of PMnN. In this paper, the Pb(Mn1/3,Nb2/3)O3- PbZrO3-PbTiO3(PMnN-PZT) thin films with different doping ratio of PMnN are deposited by the magnetron sputtering method, and the X-ray diffraction is applied to analyze the structure of thin films, and the relative dielectric constant are characterized by the LCR testing system. The results show that the PMnN-PZT thin films with smaller doping ratio than 20% exhibit polycrstal structure, and the dielectric constant of thin films increase with the doping ratio of PMnN sharply, especially the doped PMnN is smaller than 6 mol percent. All the dielectric constants decrease with the testing frequency, and which have little change if the testing frequency is larger than 2.5kHz.

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20

Zhang, Tao, Hong Wei Ma, Jie Liu, Peng Li Zhang, and Ping Liu. "Ferroelectricity of PZT-Based Thin Films Doped with Mn and Nb." Advanced Materials Research 463-464 (February 2012): 472–76. http://dx.doi.org/10.4028/www.scientific.net/amr.463-464.472.

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The ternary compound thin films doped with Mn and Nb, Pb(Mn1/3,Nb2/3)O3-PbZrO3- PbTiO3(PMnN-PZ-PT), with the same ratio of PZ/PT=52:48(PZT(52/48)) are fabricated on the heterostructure substrates of SrRuO3(SRO)/Pt(111)/Ti/SiO2/Si(100) by the radio frequency (RF) magnetron sputtering system, in which the quench method is used for the post heat treatments. The ternary compound films exhibit polycrystal phase combined with (001), (101) and (111) orientations with the 6% mole percent mixing ratio of PMnN, in which the (111) directions are the main orientations for non-mixed PZT(52/48) films and 6% mole percent PMnN mixing PZT(52/48) films(6%PMnN-94%PZT(52/48)), and so both of them are epitaxially grown on Silicon substrates with the (111) orientation. The ferroelectricities of the films are studied by the Sawyer Tower circuit, and the results show that the mixing of PMnN seriously improves the ferroelectricities of PZT(52/48), in which the 6% mixed PZT films own the rest polarization intensity , the saturation polarization intensity and the coercive electric-field intensity =139 kV/cm which are distinctly larger than the non-mixed PZT(52/48) films

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21

Li, Mao Qiang, and Xue Feng Chen. "A Novel Micro-Actuator Made from PZT." Key Engineering Materials 280-283 (February 2007): 195–200. http://dx.doi.org/10.4028/www.scientific.net/kem.280-283.195.

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Ceramic discs are prepared with PZT powder doped with Sr and Mn, which is prepared through a modified Pechini process. A micro-actuator consists of two concentric rings with thickness of 0.15 mm made of PZT doped with Sr and Mn, a copper disc, on which the PZT rings are firmly mounted with organic glue, and a ceramic rod of φ2.5x100 mm stuck at the center of the disc. The top of the ceramic rod serves as pointer of the actuator. The outer PZT ring is equally divided into four quadrants separated each other, of which two vicinal parts are poled with the same direction as that of the inner PZT ring. The other two quadrants in the outer ring are poled with the opposite direction. The inner ring and the four quadrants of the outer ring are excited by three DC powers, respectively. Bending deformation of the copper disc is caused by properly regulating the excitation voltages exerted on the PZT ceramics. The position of the top of the ceramic rod varies with the bending deformation of the copper disc.

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22

Sutjarittangtham, Krit, Uraiwan Intatha, Sukum Eitssayeam, and Gobwute Rujijanagul. "Ferroelectric Properties of Sn-Doped PZT–PNN Ceramics." Advanced Materials Research 55-57 (August 2008): 933–36. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.933.

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Binary system of 0.45Pb(Zr1/2Ti1/2)O3–0.55Pb(Ni1/3Nb2/3)O3with a composition close to the morphotropic phase boundary were investigated as a function of Sn doping (0.0-8.0 mole%). X-ray analysis showed that pure perovskite phase was observed for all samples. The density of the ceramic samples was increased with an increase of Sn concentration. However, microstructural analysis showed that Sn-doping has not a significant impact on grain size. Moreover, the increasing Sn-contant can reduce the remanent polarization but increase the dielectic contant.

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23

VÃ©ronique, B. "Elaboration and characterization of Nb-doped PZT ceramics." Annales de Chimie Science des MatÃ©riaux 26, no. 1 (2001): 135–39. http://dx.doi.org/10.1016/s0151-9107(01)90026-1.

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24

Wong, G. H. L., B. W. Chua, Lu Li, and M. O. Lai. "Processing of thermally stable doped perovskite PZT ceramics." Journal of Materials Processing Technology 113, no. 1-3 (2001): 450–55. http://dx.doi.org/10.1016/s0924-0136(01)00631-8.

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25

Ketsuwan, P., A. Prasatkhetragarn, A. Ngamjarurojana, S. Ananta, and R. Yimnirun. "Aging Behavior of (Cr,Nb)-Doped PZT Ceramics." Ferroelectrics 452, no. 1 (2013): 13–21. http://dx.doi.org/10.1080/00150193.2013.839300.

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26

Segouin, Valentin, Barbara Kaeswurm, Kyle G. Webber, and Laurent Daniel. "Temperature-dependent anhysteretic behavior of co-doped PZT." Journal of Applied Physics 124, no. 10 (2018): 104103. http://dx.doi.org/10.1063/1.5040556.

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27

Montanari, Giulia, Anna Luisa Costa, Stefania Albonetti, and Carmen Galassi. "Nb-Doped PZT Material by Sol-Gel Combustion." Journal of Sol-Gel Science and Technology 36, no. 2 (2005): 203–11. http://dx.doi.org/10.1007/s10971-005-5290-5.

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28

Dimitriu, E., R. Ramer, C. Miclea, and C. Tănăsoiu. "Piezoelectric properties of tungsten doped PZT type materials." Ferroelectrics 241, no. 1 (2000): 207–13. http://dx.doi.org/10.1080/00150190008224993.

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29

Serrano, Sheyla, Alberto Celi, and Arvids Stashans. "Quantum chemical modelling of Al-doped PZT crystals." International Journal of Nanotechnology 3, no. 4 (2006): 517. http://dx.doi.org/10.1504/ijnt.2006.011176.

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30

CHENG, W. X., A. L. DING, PINGSUN QIU, XIYUN HE, and XINSEN ZHENG. "IMPRINT PROPERTIES OF YTTRIUM DOPED PZT THIN FILM." Integrated Ferroelectrics 75, no. 1 (2005): 173–79. http://dx.doi.org/10.1080/10584580500414366.

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31

Parashar, S. K. S., R. N. P. Choudhary, and B. S. Murty. "Nanocrystalline Zn Doped PZT Synthesized by Mechanical Alloying." Ferroelectrics 325, no. 1 (2005): 65–74. http://dx.doi.org/10.1080/00150190500326969.

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32

Chae, Byung Gyu, Su Jae Lee, Chae Ryong Cho, Yong Suk Yang, Seong Hyun Kim, and Min Su Jang. "Fatigue effects of metal-doped PZT thin films." Integrated Ferroelectrics 13, no. 1-3 (1996): 87–96. http://dx.doi.org/10.1080/10584589608013083.

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33

SHAO, CHUNYU, JING WANG, WEIJIE DONG, YAN CUI, and MIN JI. "EFFECT OF EUROPIUM DOPING ON ELECTRICAL PROPERTIES OF PZT FILMS." Surface Review and Letters 15, no. 01n02 (2008): 1–5. http://dx.doi.org/10.1142/s0218625x08010853.

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Samples of lead zirconate titanate Pb ( Zr 0.53 Ti 0.47) O 3 with europium ( Eu ) doping concentration of 0, 0.5, 1.5, 3 mol% (PEZT) were fabricated by sol–gel method. XRD spectra showed that the introduction of Eu into PZT favored the growth of (100) orientation. With 3% Eu content, the preferential orientation of the film converted from (111) to (100) orientation. The Eu -doped PZT films exhibited lower leakage current less than 10-9 A/cm2 and the behavior of leakage current was discussed in terms of defect chemistry theorem. When Eu content was 1.5%, the remanent polarization (P r ) increased to 28 μ C/cm2 which was much higher than that of undoped PZT film.

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34

Liu, Xiao-fang, Chuan-xi Xiong, Hua-jun Sun, Li-jie Dong, Ri li, and Yang Liu. "Piezoelectric and dielectric properties of PZT/PVC and graphite doped with PZT/PVC composites." Materials Science and Engineering: B 127, no. 2-3 (2006): 261–66. http://dx.doi.org/10.1016/j.mseb.2005.10.022.

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35

Bochenek, Dariusz, Przemysław Niemiec, Radosław Zachariasz, and Ryszard Skulski. "Ferroelectric Properties and Internal Friction in Doped PZT Ceramics." Key Engineering Materials 644 (May 2015): 171–74. http://dx.doi.org/10.4028/www.scientific.net/kem.644.171.

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Multicomponent PZT-type solid solution with composition: Pb0.975Ba0.01Ca0.01Sr0.005 (Zr0.52Ti0.48)O3+1.4wt.%Bi2O3+0.3wt.%GeO obtained by hot uniaxial pressing method is described in this paper. There are presented the results of studies of structural, dielectric and internal friction of obtained multicomponent PZT-type ceramics. It has been stated that the dielectric anomalies and internal friction anomalies are observed in similar temperature ranges. Obtained PZT-type ceramics have high value of the dielectric permittivity and low dielectric losses. The high temperature of phase transition and high value of electric permittivity allow considering this material as a base for low frequency and high temperature electromechanical transducers.

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36

Bochenek, Dariusz, Ćwikiel Ewa, Przemysław Niemiec, and Tomasz Goryczka. "Technology and electrophysical properties of Mn4+, Sb3+, Dy3+ and W6+ -doped Pb(Zr0.49Ti0.51)O3 ceramics." MATEC Web of Conferences 242 (2018): 01001. http://dx.doi.org/10.1051/matecconf/201824201001.

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In paper three multicomponent PZT-type ceramics doped by Mn4+, Sb3+, Dy3+, W6+ have been prepared by the conventional mixed oxide method. The multicomponent PZT-type ceramic powders were synthetized by calcining route, while densification was carried out by pressureless sintering method. The paper presents XRD, SEM, EDS, dielectric and DC electric conductivity measurements of the multicomponent PZT-type ceramic samples. Conducted tests indicate obtained multicomponent PZT-type exhibit good dielectric properties giving the possibility for their use as actuators and piezoelectric transducers in modern micromechatronic and microelectronic applications.

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37

Aleem, M. A., H. Nawaz, M. Shuaib, S. Qaisar, and M. S. Akbar. "Piezoelectric and pyroelectric properties of Sr-doped PZT (PSZT) with minor manganese additions." Journal of Physics: Conference Series 439 (June 10, 2013): 012025. http://dx.doi.org/10.1088/1742-6596/439/1/012025.

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38

Deb, K. K. "Pyroelectric characteristics of a hot-pressed lanthanum-doped PZT (PLZT (8/40/60))." Materials Letters 5, no. 5-6 (1987): 222–26. http://dx.doi.org/10.1016/0167-577x(87)90015-2.

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39

Ngernchuklin, Piyalak, Arjin Boonruang, Saengdoen Daungdaw, and Nestchanok Yongpraderm. "Comparison of Milling Techniques to Figure of Merit of 0.98PZT-0.02BYF Piezoelectric Ceramic Energy Harvester." Key Engineering Materials 690 (May 2016): 218–23. http://dx.doi.org/10.4028/www.scientific.net/kem.690.218.

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Nowadays, the concept of harvesting energy from the environment, for example, thermal, wind, sun, vibration and human activities is much of interest. PZT is one of the materials which show an ability to harness vibration energy and then change to electrical energy. Therefore, the PZT (Pb(Zr0.53Ti0.47)O3) doped with 0.02 mol% BYF (Bi(Y0.7Fe0.3)O3) piezoelectric ceramics has been studied to improve the figure of merit (d33*g33). The PZT and BYF powder systems were prepared by solid state reaction with calcination temperature of 800 and 850 °C for 2 h, respectively. XRD results showed that both powders exhibited pure perovskite phase for PZT and single phase of BYF without pyrochlore phase. Then, the two calcined powders (PZT and BYF) were mixed according to the composition of 0.02 mol% BYF doped PZT by two different milling techniques called conventional ball-milling (CBM) and high energy ball-milling (HBM) for 10 h. The result showed that average particle size obtain from HBM was 1 µm which was smaller than from CBM shown up to a few microns in bimodal mode. The PZT-BYF-HBM ceramics showed higher physical and electrical properties but lower K value. Thus promoting to higher g33 which was equal to 36.89 * 10-3(Vm/N) and FOM was 11,632*10-15(m2/N), while PZT-BYF-CBM had g33 of 26.86* 10-3(Vm/N) and FOM at 8,016*10-15(m2/N), respectively.

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40

Cui, Yan, Hui Lin Chen, Er Lei Shi, Jia Xin Zhao, and Li Ding Wang. "Fabrication and Sensing Properties of PSZT Thin Films for Micro-Force Sensors." Advanced Materials Research 60-61 (January 2009): 246–50. http://dx.doi.org/10.4028/www.scientific.net/amr.60-61.246.

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Pb1-xSrx (Zr0.53Ti0.47) O3 (PSZT) thin films have been fabricated on Pt/Ti/SiO2/Si substrate by a sol–gel method combined with a rapid thermal annealing process. The microstructure analysis of the thin films showed that the orientation ratio of (111) was 0.304，0.475 and 0.849 with x=0, 0.03, 0.08. The dielectric measurement suggested that the addition of Sr in Pb(Zr0.53Ti0.47) O3(PZT) thin films greatly improved the dielectric properties of PZT thin films. The dielectric constant for PZT thin films at a frequency of 2 kHz was 648，which was increased to 1239 when 3%at Sr was doped. Meanwhile, the dissipation factor was only increased from 0.02 to 0.03. Three kinds of piezoelectric micro-sensors have been prepared based on PSZT thin films and the sensing sensitivity of 0.017pc/uN, 0.033pc/uN, and 0.011pc/uN were realized as x increased, respectively. It indicated that micro-sensors with PSZT0.03 thin films showed better sensing property than other two.

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41

Azree Jamil, Mohammad Amerul, Johar Banjuraizah, Shing Fhan Khor, and Zainal Arifin Ahmad. "Synthesis and Characterization of PZT Doped Lanthanum, Neodymium and Yttrium Using Sol Gel Method." Materials Science Forum 840 (January 2016): 66–70. http://dx.doi.org/10.4028/www.scientific.net/msf.840.66.

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PZT ceramic is synthesis by using sol gel method.Introducing a dopant to the pure PZT can help to enhance the properties of the piezoelectric ceramic. The effects of sintering temperature on phase formation, densification of the ceramics have been investigated using XRD, SEM and Archimedes method. The bulk density and porosity of PZT decreased as the sintering temperature increased.

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42

Kitagawa, Kaduichi, Kazuo Yamana, Shizuo Nakamura, Kazuo Kitagawa, and Takashi Yamamoto. "Piezoelectric and Structural Properties of Acceptor Doped PZT Ceramics." Journal of the Japan Society of Powder and Powder Metallurgy 47, no. 9 (2000): 935–40. http://dx.doi.org/10.2497/jjspm.47.935.

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43

Durruthy-Rodríguez, M. D., F. Calderón-Piñar, C. Malfatti, and L. D. Pérez-Fernández. "Sintering Kinetics of Soft-Doped PZT (54/46) Systems." Journal of Modern Physics 02, no. 05 (2011): 416–20. http://dx.doi.org/10.4236/jmp.2011.25051.

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44

Shen, Hongfang, Qing Guo, Zhiman Zhao, and Guozhong Cao. "Sol–gel derived PZT films doped with vanadium pentoxide." Materials Research Bulletin 44, no. 11 (2009): 2152–54. http://dx.doi.org/10.1016/j.materresbull.2009.07.006.

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45

Es-Souni, M., and N. Zhang. "Erbium doped PZT and multilayer structures for pyroelectric applications." Materials Science and Engineering: B 106, no. 1 (2004): 79–84. http://dx.doi.org/10.1016/j.mseb.2003.09.008.

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46

Lisnevskaya, I. V., I. A. Bobrova, T. G. Lupeiko, M. R. Agamirzoeva, and K. V. Myagkaya. "Y3Fe5O12/Na,Bi,Sr-doped PZT particulate magnetoelectric composites." Journal of Magnetism and Magnetic Materials 405 (May 2016): 62–65. http://dx.doi.org/10.1016/j.jmmm.2015.12.052.

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47

OJIMA, Sho, Shigeru FUJIMOTO, Masaaki ICHIKI, and Akihiro MOROHOSHI. "Power Generation Characteristics of La-doped Laminated PZT Element." Proceedings of Conference of Kanto Branch 2019.25 (2019): 19G07. http://dx.doi.org/10.1299/jsmekanto.2019.25.19g07.

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48

Fujii, Takamichi, Yoshikazu Hishinuma, Tsuyoshi Mita, and Takami Arakawa. "Preparation of Nb doped PZT film by RF sputtering." Solid State Communications 149, no. 41-42 (2009): 1799–802. http://dx.doi.org/10.1016/j.ssc.2009.07.021.

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49

Zheng, H., I. M. Reaney, W. E. Lee, N. Jones, and H. Thomas. "Effects of strontium substitution in Nb-doped PZT ceramics." Journal of the European Ceramic Society 21, no. 10-11 (2001): 1371–75. http://dx.doi.org/10.1016/s0955-2219(01)00021-8.

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50

Sharma, H. D., A. K. Tripathi, Vijayaraghavan Chariar, T. C. Goel, and P. K. C. Pillai. "Dielectric and pyroelectric characteristics of PZT doped with gadolinium." Materials Science and Engineering: B 25, no. 1 (1994): 29–33. http://dx.doi.org/10.1016/0921-5107(94)90197-x.

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