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Journal articles on the topic 'Laser leds'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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1

Tessler, N., and R. H. Friend. "Polymer leds as laser media ?" Synthetic Metals 102, no. 1-3 (1999): 1122–23. http://dx.doi.org/10.1016/s0379-6779(98)01410-6.

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2

Chan, C. P., J. Gao, T. M. Yue, et al. "Study of Laser-Debonded GaN LEDs." IEEE Transactions on Electron Devices 53, no. 9 (2006): 2266–72. http://dx.doi.org/10.1109/ted.2006.881008.

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3

Delmdahl, Ralph, Thorsten Passow, Michael Kunzer, and Michael Binder. "Laser Repair of Defects in GaN LEDs." Optik & Photonik 13, no. 3 (2018): 43–45. http://dx.doi.org/10.1002/opph.201800020.

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4

Chyr, Irving, Cheng Peng, Ji Wang, and Jonathan Halderman. "Studies and Applications of Advanced Laser Scribing for High Brightness LEDs." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, DPC (2012): 000684–705. http://dx.doi.org/10.4071/2012dpc-ta42.

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The optical and electrical properties of LEDs scribed using both traditional and advanced laser scribing were investigated. Variations in scribe line texture and depth were examined and monitored for both laser types using both optical and electron microscopy. Simulation was conducted and verified by the experimental results on laser scribing depth versus LED light output. The metrology techniques also correlated the sidewall roughness with light output of LED between traditional and advanced laser scribing. Improvements by the advanced laser scribing were demonstrated for different LED design

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5

Nakamura, Shuji. "Blue-Green Light-Emitting Diodes and Violet Laser Diodes." MRS Bulletin 22, no. 2 (1997): 29–35. http://dx.doi.org/10.1557/s088376940003253x.

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Short-wavelength-emitting devices, such as blue laser diodes (LDs) and light-emitting diodes (LEDs), are currently sought for a number of applications, including full-color electroluminescent displays, laser printers, read-write laser sources for high-density information storage on magnetic and optical media, and sources for undersea optical communications. For these purposes, II–VI materials such as ZnSe and SiC, and III–V-nitride semiconductors such as GaN have been investigated intensively for a long time. However it was impossible to obtain high-brightness (over 1 cd) blue LEDs and reliabl

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6

Nakamura, S., M. Senoh, S. Nagahama, N. Iwasa, T. Matushita, and T. Mukai. "InGaN/GaN/AlGaN-Based Leds and Laser Diodes." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 1–17. http://dx.doi.org/10.1557/s1092578300002192.

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InGaN quantum-well-structure blue LEDs were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The output power of both LEDs was as high as 6 mW at a current of 20 mA. The LED on sapphire had a considerable amount of leakage current in comparison with that on ELOG. These results indicate that In composition fluctuation is not caused by threading dislocations (TDs), free carriers are captured by radiative recombination centers before they are captured by nonradiative recombination centers in InGaN, and that the dislocations form the leakage current pathway in InGaN. Re

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7

Fay, M. W., A. Nasir, O. Makarovsky, et al. "TEM of Nano-LEDs made by laser writing." Journal of Physics: Conference Series 326 (November 9, 2011): 012055. http://dx.doi.org/10.1088/1742-6596/326/1/012055.

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8

Pawliszyn, Janusz. "LEDs and laser diodes in schlieren optics methods." Review of Scientific Instruments 58, no. 2 (1987): 245–48. http://dx.doi.org/10.1063/1.1139315.

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9

Nakamura, Shuji. "InGaN-based blue/green LEDs and laser diodes." Advanced Materials 8, no. 8 (1996): 689–92. http://dx.doi.org/10.1002/adma.19960080821.

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10

Mendes, Marco, Jeffrey Sercel, Mathew Hannon, et al. "Advanced Laser Scribing for Emerging LED Materials." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (2011): 001443–71. http://dx.doi.org/10.4071/2011dpc-wa32.

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Lasers are becoming increasingly important in today's LED revolution and are essential for increasing the efficiency and reducing manufacturing cost of LEDs. Diode pumped solid state lasers excel in scribing horizontal type LEDs on sapphire, silicon, silicon carbide, III-nitrides (gallium nitride and aluminum nitride), as well as III-V semiconductors (gallium arsenide, gallium phosphide). These lasers are also used for dicing vertical type LEDs, which are becoming increasingly more important, often using high thermal conductivity metallic substrates such as copper, CuW and molybdenum. In this

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11

Nikoobakht, Babak, Robin P. Hansen, Yuqin Zong, Amit Agrawal, Michael Shur, and Jerry Tersoff. "High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs)." Science Advances 6, no. 33 (2020): eaba4346. http://dx.doi.org/10.1126/sciadv.aba4346.

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“Efficiency droop,” i.e., a decline in brightness of light-emitting diodes (LEDs) at high electrical currents, limits the performance of all commercial LEDs and has limited the output power of submicrometer LEDs and lasers to nanowatts. We present a fin p-n junction LED pixel that eliminates efficiency droop, allowing LED brightness to increase linearly with current. With record current densities of 1000 kA/cm2, the LEDs transition to lasing, with brightness over 20 μW. Despite a light extraction efficiency of only 15%, these devices exceed the output power of any previous electrically driven

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12

NAKAMURA, SHUJI. "ROLE OF DISLOCATIONS IN InGaN-BASED LEDs AND LASER DIODES." International Journal of High Speed Electronics and Systems 10, no. 01 (2000): 271–79. http://dx.doi.org/10.1142/s0129156400000301.

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UV InGaN and GaN single-quantum-well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown (ELOG) and sapphire substrates. When the emission wavelength of UV InGaN LEDs was shorter than 380 nm, the external quantum efficiency (EQE) of the LED on ELOG was much higher than that on sapphire only at high-current operation. At low-current operation, both LEDs had the same EQE. When the active layer was GaN, EQE of the LED on sapphire was much lower than that on ELOG at both low- and high-current operation due to the lack of localized energy states formed by In composi

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13

Benson, Gerrit Maritz, Abiodun Bayode, and Ockert Cornelius Koekemoer. "SLM: Melt-pool prediction through transient thermal simulation." MATEC Web of Conferences 406 (2024): 06009. https://doi.org/10.1051/matecconf/202440606009.

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This paper evaluates the accuracy of transient thermal simulations in predicting melt pool geometry, including width and depth, during Selective Laser Melting (SLM) for different laser energy densities (LEDs). While the simulation results show similar trends to experimental data, they exhibit significant accuracy errors, especially at higher LEDs due to the inability to account for keyhole melting caused by the Marangoni effect. Despite these inaccuracies, the simulations remain useful for parameter development if the errors are considered and LEDs that cause keyhole melting are avoided. To ac

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14

Petri, Aspasia, and Efthymios Karabetsos. "Public exposure to artificial optical radiation in the aesthetics and the entertainment sector in Greece. Risk management actions." Radiation Protection Dosimetry 199, no. 8-9 (2023): 806–17. http://dx.doi.org/10.1093/rpd/ncad083.

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Abstract Safety issues are raised from the use of low- and high-power optical radiation sources, both laser and non-laser, by non-experts for aesthetic and entertainment purposes. The Greek Atomic Energy Commission relied on the ISO 31000:2018 framework to manage the public exposure risk to such cases. Risk was evaluated as (1) intolerable for lasers and intense pulsed light sources at aesthetic procedures and in the case of laser pointers, (2) severe for lasers at laser shows and (3) moderate for light-emitting diodes (LEDs) at aesthetic procedures, home-use intense pulsed light sources/LEDs

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15

Zanin, Fatima. "Recent Advances in Dental Bleaching with Laser and LEDs." Photomedicine and Laser Surgery 34, no. 4 (2016): 135–36. http://dx.doi.org/10.1089/pho.2016.4111.

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16

Ghaemi, Marjan, Davood Sharifi, Soheila Mokmeli, Golshad Kowsari, Pejman Mortazavi, and Pouneh Golmai. "Comparison and Evaluation of the Low-Level Laser and the Red and Blue LED Effects on Wound Healing in Rabbit." Journal of Lasers in Medical Sciences 10, no. 3 (2019): 189–93. http://dx.doi.org/10.15171/jlms.2019.30.

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Introduction: Wound healing is a dynamic, interactive process to achieve the restoration of skin integrity and proper function after damage. Applying a low-level laser (LLL) and light emitting diodes (henceforth LEDs) is introduced in previous studies to accelerate the process of wound healing. The aim of this study is to compare the effect of the LLL and LEDs on wound healing in rabbits. Methods: Full thickness same size square excision wounds were created on the dorsum of the rabbits. Twenty rabbits were randomly divided into four groups, according to the treatment received. Group 1: the AlG

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17

Chen, Lung-Chien, Wen-Wei Lin, and Jun-Wei Chen. "Fabrication of GaN-Based White Light-Emitting Diodes on Yttrium Aluminum Garnet-Polydimethylsiloxane Flexible Substrates." Advances in Materials Science and Engineering 2015 (2015): 1–5. http://dx.doi.org/10.1155/2015/537163.

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This study concerns the characteristics of white GaN-based light-emitting diode (LED) on flexible substrates. The thin film GaN-based blue LEDs were directly transferred from sapphire onto the flexible polydimethylsiloxane (PDMS) substrates by laser lift-off (LLO) process. The PDMS substrates were incorporated 10–40% cerium doped yttrium aluminum garnet phosphor, YAG:Ce3+, and formed the GaN-based white LEDs. The white LEDs prepared by the GaN-based LEDs on the YAG-PDMS substrates reveal one peak at 470 nm corresponding to the emission of the GaN-based LED and a broadband included five weak pe

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18

Shimokawa, Moe, Yuya Yamada, Tomoya Omori, et al. "Fabrication of vertical AlGaN-based deep-ultraviolet light-emitting diodes operating at high current density (∼43 kA cm⁻²) using a laser liftoff method." Applied Physics Express 15, no. 4 (2022): 041006. http://dx.doi.org/10.35848/1882-0786/ac5e64.

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Abstract We have successfully fabricated vertical LEDs by separating a 1 × 1 cm2 wafer composed of deep-ultraviolet LED on a sapphire substrate from the substrate using a laser liftoff (LLO) method. Reproducible substrate separation was achieved by the LLO method using an Al0.68Ga0.32N underlayer film on an AlN template with periodic pillars. The fabricated vertical LED successfully demonstrated notable luminescence (peak wavelength: 298 nm) characteristics up to a current density of ∼43 kA cm−2 at room temperature and in pulsed drive, which is expected to be used in high-power LEDs and laser

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19

Haneder, Stephan, Florian Rommen, Martin Unterburger, Stefan Morgott, and Benjamin Schulz. "55‐3: Invited Paper: From Smallest AR Glasses to Mainstream Display Projection — Latest Advances of Visible LED and Laser Solutions." SID Symposium Digest of Technical Papers 54, no. 1 (2023): 795–98. http://dx.doi.org/10.1002/sdtp.16682.

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Solid state light sources for projection displays have shown tremendous progress over the recent years. Their application usage is ranging from low luminance near to eye projection for augmented reality glasses to mainstream projectors. This presentation will share some of the latest progresses for laser and LEDs for Near‐to‐eye (NTE) displays and will describe important design challenges such as package integration and power efficiency. Besides, High Current LEDs are further pushing the limits and bring LED based projection light engines on eye‐to‐eye brightness level with lamp & laser‐ba

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20

Yu, Luming, Boyang Lu, Ping Yu та ін. "Ultra-small size (1–20 μm) blue and green micro-LEDs fabricated by laser direct writing lithography". Applied Physics Letters 121, № 4 (2022): 042106. http://dx.doi.org/10.1063/5.0099642.

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Ultra-small micro-LEDs are essential for next-generation display technology. However, micro-LEDs below 5 μm have been seldom reported. In this work, we demonstrate InGaN-based blue and green micro-LEDs from 1 to 20 μm by using laser direct writing lithography. The 1-μm blue micro-LEDs show a peak external quantum efficiency of 13.02%, which is 9.57% for green ones. By characterizing the size-dependent external quantum efficiency and simply assuming that this variety is dominantly determined by the dry-etching induced dead zone, we deduce that the dead zone sizes of carrier injection at the edg

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21

Aktas, Muhammed, Szymon Grzanka, Łucja Marona, et al. "Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation." Materials 17, no. 18 (2024): 4502. http://dx.doi.org/10.3390/ma17184502.

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This work reports on the possibility of sustaining a stable operation of polarization-doped InGaN light emitters over a particularly broad temperature range. We obtained efficient emission from InGaN light-emitting diodes between 20 K and 295 K and from laser diodes between 77 K and 295 K under continuous wave operation. The main part of the p-type layers was fabricated from composition-graded AlGaN. To optimize injection efficiency and improve contact resistance, we introduced thin Mg-doped layers of GaN (subcontact) and AlGaN (electron blocking layer in the case of laser diodes). In the case

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22

Dewan, Sheetal, Monika Tomar, R. P. Tandon, and Vinay Gupta. "Room temperature electroluminescence from Laser MBE grown Gallium nitride LEDs." Materials Science and Engineering: B 260 (October 2020): 114655. http://dx.doi.org/10.1016/j.mseb.2020.114655.

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23

Aladov, A. V., A. E. Chernyakov, A. E. Ivanov, and A. L. Zakgeim. "Study of power limitation of AlGaInN LEDs in pulse regime at high current." Journal of Physics: Conference Series 2103, no. 1 (2021): 012186. http://dx.doi.org/10.1088/1742-6596/2103/1/012186.

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Abstract LEDs operating under high pulsed current are of a great interest for different applications, in particular, for VLC (LiFi) systems and laser pumping. Current dependences of the efficiency and emission spectra as well as the rise and fall times of high-power blue LEDs were investigated under extremely high pulse current density up to 7 kA/cm2 and pulse duration from 100 ns to 3 μs. Analysis of the pulse behaviour of the LEDs reveals that the main droop in the efficiency and change in spectra occur up to the current densities ~ 1 kA/cm2 and seems to be non-thermal.

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24

Lu, Bo, Jichen Zhu, Yunfeng Ge, et al. "Automated Determination of the Volume of Loose Engineering Deposits Using Terrestrial Laser Scanning." Remote Sensing 15, no. 18 (2023): 4604. http://dx.doi.org/10.3390/rs15184604.

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A new method for automatic volume determination of loose engineering deposits (LEDs) using point clouds collected by terrestrial laser scanning is proposed. The method starts with a problem of lacking bottom surface point clouds when scanning LEDs, assuming that the bottom surface is flat, a spatial plane is generated based on the plane fitting to the bottom surface. Then the sample point cloud is projected on this fitted plane to construct the subface point clouds, which, together with the initial point cloud data, are stitched into complete point cloud data with good closure, integrity, and

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25

Huang, Yu, Xiaoyu Zhou, Lichun Zhang, et al. "Tunable electroluminescence from an n-ZnO/p-GaN heterojunction with a CsPbBr3 interlayer grown by pulsed laser deposition." Journal of Materials Chemistry C 8, no. 35 (2020): 12240–46. http://dx.doi.org/10.1039/d0tc02807j.

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26

Letson, Benjamin C., Simon Barke, Samantha Parry Kenyon, et al. "High volume UV LED performance testing." Review of Scientific Instruments 93, no. 11 (2022): 114503. http://dx.doi.org/10.1063/5.0107372.

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There is increasing interest in deep UV Light-Emitting Diodes (LEDs) for applications in water purification, virus inactivation, sterilization, bioagent detection, and UV curing, as well as charge management control in the Laser Interferometer Space Antenna (LISA), which will be the first gravitational wave detector in space. To fully understand the current state of commercial UV LEDs and assess their performance for use on LISA, large numbers of UV LEDs need to be tested across a range of temperatures while operating in air or in a vacuum. We describe a new hardware system designed to accommo

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27

Prud’homme, Alberto, and Frederic Nabki. "Cost-Effective Photoacoustic Imaging Using High-Power Light-Emitting Diodes Driven by an Avalanche Oscillator." Sensors 25, no. 6 (2025): 1643. https://doi.org/10.3390/s25061643.

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Photoacoustic imaging (PAI) is an emerging modality that merges optical and ultrasound imaging to provide high-resolution and functional insights into biological tissues. This technique leverages the photoacoustic effect, where tissue absorbs pulsed laser light, generating acoustic waves that are captured to reconstruct images. While lasers have traditionally been the light source for PAI, their high cost and complexity drive interest towards alternative sources like light-emitting diodes (LEDs). This study evaluates the feasibility of using an avalanche oscillator to drive high-power LEDs in

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28

Li, Qing, Wan-chao Zhang, Cai-Feng Wang, and Su Chen. "In situ access to fluorescent dual-component polymers towards optoelectronic devices via inhomogeneous biphase frontal polymerization." RSC Advances 5, no. 124 (2015): 102294–99. http://dx.doi.org/10.1039/c5ra19173d.

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29

Chong, Chee Mun, Stuart Wenham, Jingjia Ji, et al. "LEDs for the Implementation of Advanced Hydrogenation Using Hydrogen Charge-State Control." International Journal of Photoenergy 2018 (2018): 1–6. http://dx.doi.org/10.1155/2018/2439425.

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Light-induced degradation (LID) of p-type Cz solar cells has plagued the industry for many decades. However, in recent years, new techniques for solving this LID have been developed, with hydrogen passivation of the boron-oxygen defects appearing to be an important contributor to the solution. Advanced hydrogenation approaches involving the control of the charge state for the hydrogen atoms in silicon to enhance their diffusivity and reactivity are developed and evaluated in this work for commercial application using a prototype industrial tool in conjunction with solar cells manufactured on c

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30

Nakamura, Shuji. "Role of Alloy Fluctuations in InGaN-Based LEDs and Laser Diodes." Materials Science Forum 338-342 (May 2000): 1609–14. http://dx.doi.org/10.4028/www.scientific.net/msf.338-342.1609.

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31

Lourenço, M. A., and K. P. Homewood. "Crystalline-silicon-based infra-red LEDs and routes to laser diodes." Thin Solid Films 519, no. 24 (2011): 8441–45. http://dx.doi.org/10.1016/j.tsf.2011.05.020.

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32

Yu, Z., J. Ren, B. Sneed, et al. "Blue laser diodes and LEDs based on II-VI semiconductor heterostructures." IEEE Transactions on Electron Devices 39, no. 11 (1992): 2653. http://dx.doi.org/10.1109/16.163512.

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33

Meyer, Jerry, William Bewley, Chadwick Canedy, et al. "The Interband Cascade Laser." Photonics 7, no. 3 (2020): 75. http://dx.doi.org/10.3390/photonics7030075.

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We review the history, development, design principles, experimental operating characteristics, and specialized architectures of interband cascade lasers for the mid-wave infrared spectral region. We discuss the present understanding of the mechanisms limiting the ICL performance and provide a perspective on the potential for future improvements. Such device properties as the threshold current and power densities, continuous-wave output power, and wall-plug efficiency are compared with those of the quantum cascade laser. Newer device classes such as ICL frequency combs, interband cascade vertic

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34

Hafidhotunnisa, Ummi. "Implementation of Voice Transmission Through Optical Fiber using different LEDs." Jurnal Jartel: Jurnal Jaringan Telekomunikasi 9, no. 2 (2019): 39–41. http://dx.doi.org/10.33795/jartel.v9i2.207.

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Optical fiber is a transmission medium for sending information that uses light as a source of information. Optical fiber can be used as a transmission medium to transmit information in the form of data, video and voice. Of the various kinds of light sources used, the most bpouler used is laser. Even though there are still many light sources used, namely leds. In this research, the design of a sound transmission transmission system is designed, but by using a led light source with different colors. With different colors means the wavelength of the led is also different. This affects the amount

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35

Bornemann, Steffen, Nursidik Yulianto, Tobias Meyer, et al. "Structural Modifications in Free-Standing InGaN/GaN LEDs after Femtosecond Laser Lift-Off." Proceedings 2, no. 13 (2018): 897. http://dx.doi.org/10.3390/proceedings2130897.

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A laser lift-off (LLO) process has been developed for detaching thin InGaN/GaN lightemitting diodes (LED) from their original sapphire substrates by applying an ultrafast laser. LLO is usually based on intense UV irradiation, which is transmitted through the sapphire substrate and subsequently absorbed at the interface to the epitaxially grown GaN stack. Here, we present a successful implementation of a two-step LLO process with 350 fs short pulses in the green spectral range (520 nm) based on a two-photon absorption mechanism. Cathodo- and electroluminescence experiments have proven the funct

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36

Wu, Yewchung S., Ji-Hao Cheng, and Hao Ouyanga. "Effects of Laser Sources on the Reverse-Bias Leakages of Laser Lift-Off GaN-Based LEDs." ECS Transactions 6, no. 2 (2019): 285–87. http://dx.doi.org/10.1149/1.2731196.

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Mannam, Ramanjaneyulu, F. Bellarmine, E. Senthil Kumar, Nandita DasGupta, and M. S. Ramachandra Rao. "Polarity control and enhanced luminescence characteristics of semi-polar ZnO nanostructures grown on non-polar MgO(100) substrates." RSC Advances 6, no. 95 (2016): 93125–29. http://dx.doi.org/10.1039/c6ra21529g.

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Enhancing luminescence characteristics is one of the key challenges in ZnO nanostructures for highly efficient UV-blue LEDs and laser diodes. We report enhanced CL emission intensity by tailoring polar and non-polar ZnO nanostructures.

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38

Ku, Jun Ho, and Jae Pil Jung. "Recent Advences in Laser and Laser-Assisted Bonding (LAB) Technologies for Micro-Soldering and Applications to Mini-LED." Journal of Welding and Joining 42, no. 4 (2024): 428–36. http://dx.doi.org/10.5781/jwj.2024.42.4.10.

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Advancements in laser soldering and laser-assisted bonding (LAB) have revolutionized electronic manufacturing by enhancing solder joint formation with precise control, reduced thermal impact, and improved reliability. These technologies are crucial for high-density assemblies in advanced electronics, supporting miniaturization and increasing functionality. This paper introduces recent advancements in laser and LAB technologies for micro-soldering. The paper describes Nd:YAG and diode lasers, their micro-soldering results, the microstructure of the solder joint, and the author's LAB application

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Kim, DoYoung, Seong Ryu, Sukang Bae, et al. "Dynamics of Blister Actuation in Laser-Induced Forward Transfer for Contactless Microchip Transfer." Nanomaterials 14, no. 23 (2024): 1926. http://dx.doi.org/10.3390/nano14231926.

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The rapid evolution of microelectronics and display technologies has driven the demand for advanced manufacturing techniques capable of precise, high-speed microchip transfer. As devices shrink in size and increase in complexity, scalable and contactless methods for microscale placement are essential. Laser-induced forward transfer (LIFT) has emerged as a transformative solution, offering the precision and adaptability required for next-generation applications such as micro-light-emitting diodes (μ-LEDs). This study optimizes the LIFT process for the precise transfer of silicon microchips desi

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40

Duru, Selim, Buğra Er, Görkem Bavtar, and Ahmet Altuncu. "Design of an LED and Laser Diode Based Optical Vehicle Alerting System." International Journal of Automotive Science And Technology 9, no. 1 (2025): 106–13. https://doi.org/10.30939/ijastech..1603306.

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The quiet operation of electric and hybrid vehicles at low speeds can pose a risk to pedestrians. To enhance pedestrian safety, Acoustic Vehicle Alerting Systems (AVAS) have been developed. The objective of this study is to develop an Optical Vehicle Alerting System (OVAS) that is integrated with vehicle speed data, with the aim of improving pedestrian awareness. By processing speed data transmitted via the Controller Area Network (CAN) bus, a variety of light patterns were projected on the road surface using optical sources in daylight conditions. In the pro-posed system, the efficacy of line

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41

Nguyen, Hieu P. T. "Editorial of Special Issue “Nanostructured Light-Emitters”." Micromachines 11, no. 6 (2020): 601. http://dx.doi.org/10.3390/mi11060601.

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Significant progress has been made in the development of nanophotonic devices and the use of nanostructured materials for optoelectronic devices, including light-emitting diodes (LEDs) and laser diodes, has recently attracted tremendous attention due to the fact of their unique geometry [...]

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42

Liang, Banglong, Zili Wang, Cheng Qian, et al. "Investigation of Step-Stress Accelerated Degradation Test Strategy for Ultraviolet Light Emitting Diodes." Materials 12, no. 19 (2019): 3119. http://dx.doi.org/10.3390/ma12193119.

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III-nitride-based ultraviolet light emitting diode (UV LED) has numerous attractive applications in air and water purification, UV photolithography, and in situ activation of drugs through optical stimulus, solid state lighting, polymer curing, and laser surgery. However, the unclear failure mechanisms and uncertainty reliability have limited its application. Therefore, a design of an appropriate reliability test plan for UV LEDs has become extremely urgent. Compared to traditional reliability tests recommended in LED lighting industry, the step-stress accelerated degradation test (SSADT) is m

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43

Ohkawa, K., M. Behringer, H. Wenisch, et al. "ZnSe-Based Laser Diodes and LEDs Grown on ZnSe and GaAs Substrates." physica status solidi (b) 202, no. 2 (1997): 683–93. http://dx.doi.org/10.1002/1521-3951(199708)202:2<683::aid-pssb683>3.0.co;2-8.

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44

XIANG, Wenci, Hao SUN, Sibo WANG, et al. "Ultrafast Laser Lift-off of Semipolar GaN-based LEDs on Sapphire Substrates." Chinese Journal of Luminescence 45, no. 4 (2024): 681–87. http://dx.doi.org/10.37188/cjl.20240010.

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Shang, Xiurui. "Research on the Advantages and Challenges of Replacing LEDs with Lasers in Functional Near-Infrared Spectroscopy Systems Based on Advanced Signal Processing Algorithms." Applied and Computational Engineering 100, no. 1 (2024): 14–21. http://dx.doi.org/10.54254/2755-2721/100/20251736.

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Abstract: Functional near infrared spectroscopy (fNIRS) has received increasing attention as a non-invasive, portable brain hemodynamic monitoring tool due to its potential for use in natural Settings. Traditional fNIRS systems commonly use light-emitting diodes (LEDs) as light sources, which have become the mainstream choice because of their low cost, easy integration, low heat output, and availability of a variety of near-infrared wavelengths. However, LEDs are limited by their low optical output power and broad wavelength range, which restrict their effectiveness in deep tissue penetration

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Shang, Xiurui. "Research on the Advantages and Challenges of Replacing LEDs with Lasers in Functional Near-Infrared Spectroscopy Systems Based on Advanced Signal Processing Algorithms." Applied and Computational Engineering 116, no. 1 (2024): 14–21. https://doi.org/10.54254/2755-2721/116/20251736.

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Functional near infrared spectroscopy (fNIRS) has received increasing attention as a non-invasive, portable brain hemodynamic monitoring tool due to its potential for use in natural Settings. Traditional fNIRS systems commonly use light-emitting diodes (LEDs) as light sources, which have become the mainstream choice because of their low cost, easy integration, low heat output, and availability of a variety of near-infrared wavelengths. However, LEDs are limited by their low optical output power and broad wavelength range, which restrict their effectiveness in deep tissue penetration and signal

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Huang, Hong-Wei, Chien-Wei Huang, Yi-Chian Chen, et al. "Five-Surface Phosphor-in-Glass for Enhanced Illumination and Superior Color Uniformity in Large-View Scale LEDs." Micromachines 15, no. 8 (2024): 946. http://dx.doi.org/10.3390/mi15080946.

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A novel five-surface phosphor-in-glass (FS-PiG) structure for high illumination and excellent color uniformity in large-view scale LEDs for sensor light source application is demonstrated. YAG phosphor (Y3Al5O12:Ce3+) was uniformly mixed with ceramic and sintered at 680 °C to form a phosphor wafer. Sophisticated laser engraving was employed on the phosphor wafer to form saddle-shaped large-view scale FS-PiG LEDs. The performance of the FS-PiG LEDs exhibited an illumination of 401 lm, average color temperature (CCT) of 5488 K ± 110 K, and color coordinates (CIE) of (0.3179 ± 0.003, 0.3352 ± 0.0

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Ribeiro, Rickson Souza, Juliana Alves Rodrigues, Andre Luiz Mencalha, and Adenilson de Souza da Fonseca. "Low-power blue LED and red laser effects on plasmid DNA, survival, and photolyase mRNA levels in Escherichia coli cultures." Laser Physics Letters 20, no. 8 (2023): 085601. http://dx.doi.org/10.1088/1612-202x/ace0b1.

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Abstract Low-power lasers and light-emitting diodes (LEDs) are used for photobiomodulation therapy, but the photobiological effects on DNA repair mechanisms in bacteria cells are disputed yet. This work aimed to evaluate the induction of DNA damages in plasmids, bacterial survival and proliferation, and photolyase mRNA levels in E. coli cultures exposed to low-power blue LED and red laser, followed by ultraviolet c (UVC) radiation. Aliquots of pUC19 plasmids and E. coli C600 cultures were exposed to low-power blue LED (470 nm) and red laser (658 nm) at different fluences. Other E. coli C600 cu

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Aladov, Andrey V., Alexander L. Zakgeim, Anton E. Ivanov, and Anton E. Chernyakov. "High-Power AlGaInN LED Emitter for Solid-State Lasers Pumping." Light & Engineering, no. 06-2023 (December 2023): 50–56. http://dx.doi.org/10.33383/2023-024.

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The work is devoted to the creation and study of high-power AlGaInN LED source with emission wavelengths (460–480) nm for pumping of solid-state lasers. The electrical, spectral, power and thermal characteristics were studied in a wide range of currents, continuous and pulsed modes. The design of LED matrices, which provides a tight “packing” of LEDs, their electrical commutation, efficient heat removal and a power supply for a wide pulse range has been proposed. The developed emitter comprises the most powerful and efficient to date LE Q8W (Osram) LEDs and is intended primarily for pumping Ti

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Liu, Chuanbiao, Feng Feng, and Zhaojun Liu. "Comparative Analysis of Optoelectrical Performance in Laser Lift-Off Process for GaN-Based Green Micro-LED Arrays." Nanomaterials 13, no. 15 (2023): 2213. http://dx.doi.org/10.3390/nano13152213.

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This work explores the pivotal role of laser lift-off (LLO) as a vital production process in facilitating the integration of Micro-LEDs into display modules. We specifically investigate the LLO process applied to high-performance gallium nitride (GaN)-based green Micro-LED arrays, featuring a pixel size of 20 × 38 μm on a patterned sapphire substrate (PSS). Scanning electron microscopy (SEM) observations demonstrate the preservation of the GaN film and sapphire substrate, with no discernible damage. We conduct a comprehensive analysis of the optoelectrical properties of the Micro-LEDs both bef

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