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Journal articles on the topic 'Laser lift-off'

Author: Grafiati

Published: 28 May 2022

Last updated: 31 July 2025

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1

Pool, Robert. "Lift-Off Laser: GaAs on Glass." Science 243, no. 4894 (1989): 1009–10. http://dx.doi.org/10.1126/science.243.4894.1009.b.

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2

POOL, R. "Lift-Off Laser: GaAs on Glass." Science 243, no. 4894 (1989): 1009–10. http://dx.doi.org/10.1126/science.243.4894.1009-a.

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3

Lu, Yong-Feng, and Yoshinobu Aoyagi. "Laser-Induced Dry Lift-off Process." Japanese Journal of Applied Physics 34, Part 2, No. 12B (1995): L1669—L1670. http://dx.doi.org/10.1143/jjap.34.l1669.

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4

Moerl, Ludwig. "ArF laser induced lift-off process." Microelectronic Engineering 5, no. 1-4 (1986): 453–58. http://dx.doi.org/10.1016/0167-9317(86)90076-6.

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5

Bhuian, B., R. J. Winfield, and G. M. Crean. "Laser polymerization-based novel lift-off technique." Applied Surface Science 255, no. 10 (2009): 5150–53. http://dx.doi.org/10.1016/j.apsusc.2008.07.106.

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6

Chen, Xuekang, Akiharu Morimoto, Minoru Kumeda, and Tatsuo Shimizu. "Thin Film Patterning by Laser Lift-Off." Japanese Journal of Applied Physics 41, Part 1, No. 5A (2002): 3099–100. http://dx.doi.org/10.1143/jjap.41.3099.

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7

Kawan, Anil, and Soon Jae Yu. "Laser Lift-Off of the Sapphire Substrate for Fabricating Through-AlN-Via Wafer Bonded Absorption Layer Removed Thin Film Ultraviolet Flip Chip LED." Transactions on Electrical and Electronic Materials 22, no. 2 (2021): 128–32. http://dx.doi.org/10.1007/s42341-020-00273-1.

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AbstractIn this study we report chip fabrication process that allows the laser lift-off of the sapphire substrate for the transfer of the GaN based thin film flip chip to the carrier wafer. The fabrication process includes 365-nm ultraviolet flip chip LED wafer align bonding with through-AlN-via wafer and sapphire laser lift-off. n-holes with the diameter of 100 µm were etched on the GaN epilayers for accessing n-type GaN. Through-AlN-via size was 110-µm and filled by Cu electroplating method for the electrical connection. Mechanical stabilization to prevent the GaN epilayers cracking and frag

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8

Hecht, Jeff. "Fusion: Lift-off for billion dollar laser facility." Physics World 7, no. 12 (1994): 11. http://dx.doi.org/10.1088/2058-7058/7/12/13.

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9

Delmdahl, R., R. Pätzel, and J. Brune. "Large-Area Laser-Lift-Off Processing in Microelectronics." Physics Procedia 41 (2013): 241–48. http://dx.doi.org/10.1016/j.phpro.2013.03.075.

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10

Delmdahl, Ralph, Malene Fricke, and Burkhard Fechner. "Laser lift-off systems for flexible-display production." Journal of Information Display 15, no. 1 (2014): 1–4. http://dx.doi.org/10.1080/15980316.2014.881428.

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11

Bret, T., V. Wagner, D. Martin, P. Hoffmann, and M. Ilegems. "A Mechanistic Study of GaN Laser Lift-Off." physica status solidi (a) 194, no. 2 (2002): 559–62. http://dx.doi.org/10.1002/1521-396x(200212)194:2<559::aid-pssa559>3.0.co;2-s.

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12

Jang, Seong Hyun, Young Joon Han, Sang Yoon Lee, et al. "Investigation of the Chemical Structure of Ultra-Thin Polyimide Substrate for the Xenon Flash Lamp Lift-off Technology." Polymers 13, no. 4 (2021): 546. http://dx.doi.org/10.3390/polym13040546.

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Lift-off is one of the last steps in the production of next-generation flexible electronics. It is important that this step is completed quickly to prevent damage to ultrathin manufactured electronics. This study investigated the chemical structure of polyimide most suitable for the Xe Flash lamp–Lift-Off process, a next-generation lift-off technology that will replace the current dominant laser lift-off process. Based on the characteristics of the peeled-off polyimide films, the Xe Flash lamp based lift-off mechanism was identified as photothermal decomposition. This occurs by thermal conduct

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13

Lee, Sang Il, Seong Hyun Jang, Young Joon Han, Jun yeub Lee, Jun Choi, and Kwan Hyun Cho. "Xenon Flash Lamp Lift-Off Technology without Laser for Flexible Electronics." Micromachines 11, no. 11 (2020): 953. http://dx.doi.org/10.3390/mi11110953.

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This study experimentally investigated process mechanisms and characteristics of newly developed xenon flash lamp lift-off (XF-LO) technology, a novel thin film lift-off method using a light to heat conversion layer (LTHC) and a xenon flash lamp (XFL). XF-LO technology was used to lift-off polyimide (PI) films of 8.68–19.6 μm thickness. When XFL energy irradiated to the LTHC was 2.61 J/cm2, the PI film was completely released from the carrier substrate. However, as the energy intensity of the XFL increased, it became increasingly difficult to completely release the PI film from the carrier sub

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14

Pickett, L. M., and D. L. Siebers. "Soot Formation in Diesel Fuel Jets Near the Lift-Off Length." International Journal of Engine Research 7, no. 2 (2006): 103–30. http://dx.doi.org/10.1243/146808705x57793.

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Soot formation in the region downstream of the lift-off length of diesel fuel jets was investigated in an optically accessible constant-volume combustion vessel under quiescent-type diesel engine conditions. Planar laser-induced incandescence and line-of-sight laser extinction were used to determine the location of the first soot formation during mixing-controlled combustion. OH chemiluminescence imaging was used to determine the location of high-heat-release reactions relative to the soot-forming region. The primary parameters varied in the experiments were the sooting propensity of the fuel

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15

VEIKO, V. P., E. A. SHAKHNO, V. N. SMIRNOV, A. M. MIASKOVSKI, and G. D. NIKISHIN. "Laser–induced film deposition by LIFT: Physical mechanisms and applications." Laser and Particle Beams 24, no. 2 (2006): 203–9. http://dx.doi.org/10.1017/s0263034606060289.

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Peculiarities of the technique of the laser-induced film transfer (LIFT) are investigated. Possible mechanisms of tearing-off and transference of the films from the donor substrate (target) to the acceptor one are investigated. The main fields of LIFT applications are considered. One of the most interesting directions of LIFT applications—decontamination of radioactive surfaces—is investigated in detail. The main peculiarities and regimes of the processing are defined.

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16

David, Aurélien, Tetsuo Fujii, Brendan Moran, et al. "Photonic crystal laser lift-off GaN light-emitting diodes." Applied Physics Letters 88, no. 13 (2006): 133514. http://dx.doi.org/10.1063/1.2189159.

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17

Lee, Choong Hee, Sang Jin Kim, Yongsoo Oh, Mi Yang Kim, Yeo-Joo Yoon, and Hwan-Soo Lee. "Use of laser lift-off for flexible device applications." Journal of Applied Physics 108, no. 10 (2010): 102814. http://dx.doi.org/10.1063/1.3511716.

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18

Storm, Philipp, Susanne Selle, Holger von Wenckstern, Marius Grundmann, and Michael Lorenz. "Epitaxial lift-off of single crystalline CuI thin films." Journal of Materials Chemistry C 10, no. 11 (2022): 4124–27. http://dx.doi.org/10.1039/d2tc00083k.

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Single crystalline thin films of the transparent, p-type semiconductor copper iodide (CuI) were grown by pulsed laser deposition on SrF2(111) and sodium bromide (NaBr) sacrificial layers to create free-standing CuI films.

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19

Li, Rui, Weihua Chen, Xiangning Kang, et al. "Cathodoluminescence study of InGaN MQW laser diodes using laser lift-off technique." physica status solidi (c) 4, no. 1 (2007): 166–69. http://dx.doi.org/10.1002/pssc.200673525.

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20

Ji Lingfei, 季凌飞, 马瑞 Ma Rui, 张熙民 Zhang Ximin, 孙正阳 Sun Zhengyang, and 李鑫 Li Xin. "Application of Laser Lift-off Technique in Flexible Electronics Manufacturing." Chinese Journal of Lasers 47, no. 1 (2020): 0100001. http://dx.doi.org/10.3788/cjl202047.0100001.

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21

Zheng, Zhongming, Hao Long, Samuel Matta, et al. "Photoassisted chemical smoothing of AlGaN surface after laser lift-off." Journal of Vacuum Science & Technology B 38, no. 4 (2020): 042207. http://dx.doi.org/10.1116/6.0000192.

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22

Martin, R. W., H. S. Kim, Y. Cho, et al. "GaN microcavities formed by laser lift-off and plasma etching." Materials Science and Engineering: B 93, no. 1-3 (2002): 98–101. http://dx.doi.org/10.1016/s0921-5107(02)00042-9.

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23

Fang, Kuo-Lung, Ming-Yuan Huang, Chih-Chun Yang, et al. "P-3: Laser Assisted ITO Lift-off for TFT Fabrication." SID Symposium Digest of Technical Papers 38, no. 1 (2007): 180–83. http://dx.doi.org/10.1889/1.2785258.

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24

Das, J., W. Ruythooren, R. Vandersmissen, J. Derluyn, M. Germain, and G. Borghs. "Substrate removal of AlGaN/GaN HEMTs using laser lift-off." physica status solidi (c) 2, no. 7 (2005): 2655–58. http://dx.doi.org/10.1002/pssc.200461355.

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25

Kim, Bo Young, Joon Ha Kim, Jin A. Byeon, Jun Ho Lee, Jong Hyun Seo, and Jong Moo Lee. "Design and Analysis of a Laser Lift-Off System using an Excimer Laser." Korean Journal of Optics and Photonics 24, no. 5 (2013): 224–30. http://dx.doi.org/10.3807/kjop.2013.24.5.224.

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26

Morimoto, Akiharu, Takanori Norichi, Shigeru Otsubo, Takeshi Kawae, Koichi Iiyama, and Minoru Kumeda. "Oxide Film Preparation and Laser Lift-Off of Metal Films by using Excimer Laser." Review of Laser Engineering 34, Supplement (2006): 144–45. http://dx.doi.org/10.2184/lsj.34.144.

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27

Chen, Ming, Jiang-Yong Zhang, Xue-Qin Lv, Lei-Ying Ying, and Bao-Ping Zhang. "Effect of Laser Pulse Width on the Laser Lift-off Process of GaN Films." Chinese Physics Letters 30, no. 1 (2013): 014203. http://dx.doi.org/10.1088/0256-307x/30/1/014203.

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28

Ueda, Tetsuzo, Masahiro Ishida, and Masaaki Yuri. "Separation of Thin GaN from Sapphire by Laser Lift-Off Technique." Japanese Journal of Applied Physics 50, no. 4R (2011): 041001. http://dx.doi.org/10.7567/jjap.50.041001.

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29

Ueda, Tetsuzo, Masahiro Ishida, and Masaaki Yuri. "Separation of Thin GaN from Sapphire by Laser Lift-Off Technique." Japanese Journal of Applied Physics 50, no. 4 (2011): 041001. http://dx.doi.org/10.1143/jjap.50.041001.

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30

Kim, Kisoo, Soo Young Kim, and Jong-Lam Lee. "Flexible organic light-emitting diodes using a laser lift-off method." Journal of Materials Chemistry C 2, no. 12 (2014): 2144. http://dx.doi.org/10.1039/c3tc30848k.

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31

Wang, Ting, Yuan Fang, Xia Guo, Guangdi Shen, and Zhanzhong Cui. "Experimental and numerical investigation on GaN/Al2O3 laser lift-off technique." Thin Solid Films 515, no. 7-8 (2007): 3854–57. http://dx.doi.org/10.1016/j.tsf.2006.10.110.

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32

Khachatryan, Hayk, Heewung Kim, Sung-Nam Lee, Moojin Kim, and Kyoung-Bo Kim. "Sacrificial layer for laser lift-off process for flexible-display production." Vacuum 170 (December 2019): 108968. http://dx.doi.org/10.1016/j.vacuum.2019.108968.

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33

Xu, J., R. Zhang, Y. P. Wang, et al. "Preparation of large area freestanding GaN by laser lift-off technology." Materials Letters 56, no. 1-2 (2002): 43–46. http://dx.doi.org/10.1016/s0167-577x(02)00414-7.

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34

Aoshima, Hiroki, Kenichiro Takeda, Kosuke Takehara, et al. "Laser lift-off of AlN/sapphire for UV light-emitting diodes." physica status solidi (c) 9, no. 3-4 (2012): 753–56. http://dx.doi.org/10.1002/pssc.201100491.

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35

Delmdahl, Ralph, Rainer Pätzel, Jan Brune, et al. "Line beam processing for laser lift-off of GaN from sapphire." physica status solidi (a) 209, no. 12 (2012): 2653–58. http://dx.doi.org/10.1002/pssa.201228430.

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36

李, 晓燕. "Design and Research of SiC Laser Lift-Off Equipment Control System." Mechanical Engineering and Technology 14, no. 03 (2025): 320–25. https://doi.org/10.12677/met.2025.143030.

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37

Schneider, Sylvio, Harald Beyer, Karsten Lange, et al. "Miniaturized Laser Power Sensor via Rapid Phototyping." Materials Science Forum 879 (November 2016): 1721–24. http://dx.doi.org/10.4028/www.scientific.net/msf.879.1721.

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This work presents a photolithographic rapid prototyping process for producing thin films ("Rapid Phototyping"). This process allows a quick and cost-effective generation of scalable thermopile microstructures using commercial equipment and materials. Structural widths of 100x250μm can be produced reproducible in a lift-off process with an accuracy of 5 microns vertically and 30 microns horizontally.

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38

Bornemann, Steffen, Nursidik Yulianto, Tobias Meyer, et al. "Structural Modifications in Free-Standing InGaN/GaN LEDs after Femtosecond Laser Lift-Off." Proceedings 2, no. 13 (2018): 897. http://dx.doi.org/10.3390/proceedings2130897.

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A laser lift-off (LLO) process has been developed for detaching thin InGaN/GaN lightemitting diodes (LED) from their original sapphire substrates by applying an ultrafast laser. LLO is usually based on intense UV irradiation, which is transmitted through the sapphire substrate and subsequently absorbed at the interface to the epitaxially grown GaN stack. Here, we present a successful implementation of a two-step LLO process with 350 fs short pulses in the green spectral range (520 nm) based on a two-photon absorption mechanism. Cathodo- and electroluminescence experiments have proven the funct

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39

Krause, Stephan. "Selective Femtosecond Laser Lift-off Process for Scribing in Thin-film Photovoltaics." Journal of Laser Micro/Nanoengineering 10, no. 3 (2015): 274–78. http://dx.doi.org/10.2961/jlmn.2015.03.0007.

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40

Deng, Changwei, Zhenwu Shi, Linyun Yang, et al. "In situ lift-off of InAs quantum dots by pulsed laser irradiation." Applied Physics Letters 113, no. 8 (2018): 083111. http://dx.doi.org/10.1063/1.5031813.

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41

Hyeon-Soo, Kim, Dawson Martin. D., and Yeom Geun-Young. "Surface Properties of GaN Fabricated by Laser Lift-Off and ICP Etching." Journal of the Korean Physical Society 40, no. 4 (2002): 567. http://dx.doi.org/10.3938/jkps.40.567.

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42

Kim, Sun Jin, Han Eol Lee, Hyeongdo Choi, et al. "High-Performance Flexible Thermoelectric Power Generator Using Laser Multiscanning Lift-Off Process." ACS Nano 10, no. 12 (2016): 10851–57. http://dx.doi.org/10.1021/acsnano.6b05004.

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43

Chu, Chen-Fu, Fang-I. Lai, Jung-Tang Chu, et al. "Study of GaN light-emitting diodes fabricated by laser lift-off technique." Journal of Applied Physics 95, no. 8 (2004): 3916–22. http://dx.doi.org/10.1063/1.1651338.

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44

Xiaoying, Zhang, Ruan Yujiao, Chen Songyan, and Li Cheng. "GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off." Journal of Semiconductors 30, no. 12 (2009): 123001. http://dx.doi.org/10.1088/1674-4926/30/12/123001.

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45

Zilan, Li, Hu Xiaodong, Chen Ke, et al. "Preparation of GaN-based cross-sectional TEM specimens by laser lift-off." Micron 36, no. 3 (2005): 281–84. http://dx.doi.org/10.1016/j.micron.2004.12.001.

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46

Xia, Jiye, Xiaobiao Dong, Zhibo Yao, et al. "Development of High‐yield Laser Lift‐off Process for Micro LED Display." SID Symposium Digest of Technical Papers 51, S1 (2020): 55–57. http://dx.doi.org/10.1002/sdtp.13750.

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47

Reit, Radu, Jesus Espinoza, Abraham Vega, Tolis Voutsas, Adrian Avendaño-Bolívar, and David Arreaga-Salas. "82-3: Temporary Bonding Alternative to Laser Lift-Off for Flexible Displays." SID Symposium Digest of Technical Papers 49, no. 1 (2018): 1110–12. http://dx.doi.org/10.1002/sdtp.12118.

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48

XIANG, Wenci, Hao SUN, Sibo WANG, et al. "Ultrafast Laser Lift-off of Semipolar GaN-based LEDs on Sapphire Substrates." Chinese Journal of Luminescence 45, no. 4 (2024): 681–87. http://dx.doi.org/10.37188/cjl.20240010.

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49

Chowdhury, Sabuj, Sabrina Alam, Md Didarul Alam, and Fahmida Sharmin Jui. "Laser lift-off technique for applications in III-N microelectronics: A review." Microelectronic Engineering 290 (July 2024): 112198. http://dx.doi.org/10.1016/j.mee.2024.112198.

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50

Shojiki, Kanako, Moe Shimokawa, Sho Iwayama, et al. "Centimeter-scale laser lift-off of an AlGaN UVB laser diode structure grown on nano-patterned AlN." Applied Physics Express 15, no. 5 (2022): 051004. http://dx.doi.org/10.35848/1882-0786/ac6567.

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Abstract The centimeter-scale laser lift-off (LLO) of a UVB laser diode structure on nano-patterned AlN was demonstrated by using a 257 nm pulsed laser. The mechanism of this LLO, which can be used for vertical light-emitting device fabrications, was analyzed in detail from the structural and optical properties. The large-area high-yield LLO without cracks was found to be enabled by taking advantage of the intentional in-plane periodic and nanometer-scale inhomogeneous distribution of the AlN molar fraction in the AlGaN layer introduced by growing AlGaN on nano-patterned AlN.

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