Log in

Relevant bibliographies by topics / Lateral heterostructures / Dissertations / Theses

To see the other types of publications on this topic, follow the link: Lateral heterostructures.

Dissertations / Theses on the topic 'Lateral heterostructures'

Author: Grafiati

Published: 11 January 2025

Last updated: 27 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 15 dissertations / theses for your research on the topic 'Lateral heterostructures.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse dissertations / theses on a wide variety of disciplines and organise your bibliography correctly.

1

Vallis, Stuart Lawrie. "Lateral and longitudinal surface superlattices on shallow GaAs heterostructures." Thesis, University of Glasgow, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.320844.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Lai, Andrew P. (Andrew Pan). "Investigation of lateral gated quantum devices in Si/SiGe heterostructures." Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/83775.

Full text

Abstract:

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Physics, 2013.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 73-75).<br>Quantum dots in Si/SiGe have long spin decoherence times, due to the low density of nuclear spins and weak coupling between nuclear and electronic spins. Because of this, they are excellent candidates for use as solid state qubits. The initial approach towards creating controllable Si/SiGe quantum dots was to fabricate them in delta doped heterostructures. We provide evidence that the delta doping layer in these heterost

APA, Harvard, Vancouver, ISO, and other styles

3

Deborde, Jean-Laurent. "Lateral electron tunneling spectroscopy between low-dimensional electron systems in GaAs,AlGaAs heterostructures." Tönning Lübeck Marburg Der Andere Verl, 2009. http://d-nb.info/995773491/04.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Maharjan, Nikesh. "Electronic band engineering of Transition metal dichalcogenides: First Principles Calculation." OpenSIUC, 2015. https://opensiuc.lib.siu.edu/theses/1661.

Full text

Abstract:

Based on first principles Density Functional Theory calculations, we have investigated for possible paths for engineering electronic band structure of Transition Metal Dichalco- genides (TMDs). We have considered two approaches which have shown to be promising for engineering electronic bands of TMDs: substitutional chemical doping and heterostruc- turing. All the calculations are done using first principles Density Functional Theory as it is implemented in Quantum Espresso package. Two possible substitutional doping meth- ods for MoS2 are considered in our calculations; cation doping where Mo

APA, Harvard, Vancouver, ISO, and other styles

5

Graf, Davy. "Electrons in reduced dimensions : from finite lateral superlattices in AlGaAs heterostructures to few-layer graphene /." Zürich : ETH, 2007. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=17241.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Bradford, Jonathan. "Growth and characterisation of two-dimensional materials and their heterostructures on sic." Thesis, Queensland University of Technology, 2019. https://eprints.qut.edu.au/134400/1/Jonathan_Bradford_Thesis.pdf.

Full text

Abstract:

Atomically thin two-dimensional materials and their hybrids represent an elegant approach to designing and synthesizing functional nanomaterials and are expected to find applications across a broad range of new technologies. This project explored scalable synthesis of various two-dimensional layered materials and their hybrid counterparts on silicon carbide, an industrially relevant device substrate. It demonstrates the integration of graphene, hexagonal boron nitride and transition metal dichalcogenide layers which were characterised by high resolution scanning probe microscopy and electron s

APA, Harvard, Vancouver, ISO, and other styles

7

Serrano, richaud Elisa. "Modelling electronic and optical properties of 2D heterostructures." Electronic Thesis or Diss., université Paris-Saclay, 2024. http://www.theses.fr/2024UPASP121.

Full text

Abstract:

Le graphène (Gr) et le nitrure de bore hexagonal (hBN) ont un paramètre de réseau similaire (décalage de ~1,5 %) et des propriétés différentes : le Gr est un métal connu pour sa conductivité élevée et le hBN est un isolant à grand écart (~6eV) avec une forte émission d'UV. En raison de ces deux remarques, ils sont des candidats parfaits pour être empilés côte à côte dans une hétérostructure latérale au lieu d'être empilés l'un sur l'autre dans une hétérostructure verticale plus courante. Dans cette thèse, je m'intéresserai à la modélisation des propriétés électroniques et optiques des hétérost

APA, Harvard, Vancouver, ISO, and other styles

8

Soucail, Bernard. "Contributions a l'etude des changements de dimensionnalite induits par des champs exterieurs ou par un confinement lateral dans les heterostructures de semiconducteurs iii-v." Paris 6, 1990. http://www.theses.fr/1990PA066693.

Full text

Abstract:

Nos travaux recents ont montre l'interet des superreseaux de semiconducteurs pour etudier le mouvement des electrons dans une structure periodique en presence de champ electrique. En effet, contrairement aux materiaux massifs, les superreseaux ont des parametres structuraux (periode, largeur de bande electronique) qui permettent une observation des phenomenes prevus theoriquement en appliquant des champs electriques relativement faibles: les etats propres devienne localises (echelle de wannier-stark), ce qui se manifeste par un decalage vers le bleu du seuil d'absorption du superreseau. L'adjo

APA, Harvard, Vancouver, ISO, and other styles

9

Lee, Sunyoung. "Distributed effects in power transistors and the optimization of the layouts of AlGaN/GaN HFETs." Columbus, Ohio : Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1149095133.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Piotrowicz, Pawel Jan Andrzej. "Fabrication and measurement of laterally confined double barrier heterostructures with wide wells." Thesis, University of Cambridge, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627421.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Lee, Cheng-Han, and 李承翰. "Synthesis and Characterization of Monolayer WS2-WSe2 Lateral Heterostructures." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/gdc58n.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Wang, Dean, and 王鼎. "Strain-induced band evolution in lateral transition metal dichalcogenides heterostructures." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/32268349752817149661.

Full text

Abstract:

碩士<br>國立交通大學<br>電子物理系所<br>105<br>Semiconductor heterostructures based on two-dimensional transition metal dichalcogenides (TMDs) have attracted great interests recently. These two-dimensional heterostructures were given hopes for the future flexible optoelectronic devices due to their unique structural and optical properties. In these heterostructrues, the outer material usually exhibits serious strain variation caused by large lattice mismatch, i.e., ~1.59% variation has been observed in the MoS2-WSe2 system. In this work, the spatial inhomogeneity in lateral MoS2-WSe2 and WSe2-MoSe2 heterost

APA, Harvard, Vancouver, ISO, and other styles

13

Hsieh, Meng-Hsun, and 謝孟勳. "Charge transport mechanisms in vertical and lateral Gr/MoS2/Gr heterostructures." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/06116151491275209479.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

"Growth of Novel Semiconducting Nano and Heterostructures." Doctoral diss., 2014. http://hdl.handle.net/2286/R.I.25789.

Full text

Abstract:

abstract: This dissertation presents research findings on the three materials systems: lateral Si nanowires (SiNW), In<sub>2</sub>Se<sub>3</sub>/Bi<sub>2</sub>Se<sub>3</sub> heterostructures and graphene. The first part of the thesis was focused on the growth and characterization of lateral SiNW. Lateral here refers to wires growing along the plane of substrate; vertical NW on the other hand grow out of the plane of substrate. It was found, using the Au-seeded vapor – liquid – solid technique, that epitaxial single-crystal SiNW can be grown laterally along Si(111) substrates that h

APA, Harvard, Vancouver, ISO, and other styles

15

Lee, Kuo-Chih, and 李國誌. "Investigation of Lateral Electric Field Distribution of Depletion Regions in MoTe2 Nano-flake and MoTe2/SnS2 Heterostructure Devices by Scanning Photocurrent Microscopy." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/3f5y9b.

Full text

Abstract:

博士<br>國立中興大學<br>物理學系所<br>106<br>In this study, we investigate the properties of the depletion region in MoTe2 nano-flake and MoTe2/SnS2 heterostructure devices by scanning photocurrent microscopy (SPCM). We fabricated the multi-layer MoTe2 transistor devices and MoTe2/SnS2 vertical heterostructure transistor devices by the standard mechanically exfoliation method from MoTe2 and SnS2 flakes. The MoTe2 bulk material is obtained from natural mineral, and SnS2 flakes are grown by CVD method. The thickness of the MoTe2 and SnS2 are of the order of 10 nm. The 10-nm-Ti/90-nm-Au metal contacts are def

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!