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Journal articles on the topic 'Lateral heterostructures'

Author: Grafiati

Published: 11 January 2025

Last updated: 27 July 2025

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1

Guha, Puspendu, Joon Young Park, Janghyun Jo, et al. "Molecular beam epitaxial growth of Sb₂Te₃–Bi₂Te₃ lateral heterostructures." 2D Materials 9, no. 2 (2022): 025006. http://dx.doi.org/10.1088/2053-1583/ac421a.

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Abstract We report on heteroepitaxial growth of Sb2Te3–Bi2Te3 lateral heterostructures using molecular beam epitaxy. The lateral heterostructures were fabricated by growing Bi2Te3 islands of hexagonal or triangular nanostructures with a typical size of several 100 nm and thickness of ∼15 nm on graphene substrates and Sb2Te3 laterally on the side facets of the nanostructures. Multiple-step processes with different growth temperatures were employed to grow the lateral heterostructures. Electron microscopy techniques indicate that the inner region is Bi2Te3 and the outer Sb2Te3 was formed lateral

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2

Zhang, Jianzhi, Hongfu Huang, Junhao Peng, et al. "A Cost-Effective Long-Wave Infrared Detector Material Based on Graphene@PtSe2/HfSe2 Bidirectional Heterostructure: A First-Principles Study." Crystals 12, no. 9 (2022): 1244. http://dx.doi.org/10.3390/cryst12091244.

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The Graphene@PtSe2 heterostructure is an excellent long-wave infrared detection material. However, the expensive cost of PtSe2 prevents its widespread use in infrared detection. In this paper, Hf was used to partially replace Pt to form Graphene@(PtSe2)n(HfSe2)4−n (n = 1, 2, and 3) bidirectional heterostructures consisting of graphene and lateral PtSe2/HfSe2 composites based on first-principles calculations. Then, the new bidirectional heterostructures were compared with heterostructures formed by graphene with pure MSe2 (M = Pt, Hf). It was found that the band gaps of the bidirectional hetero

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3

Wan, Li-Kai, Yi-Xuan Xue, Jin-Wu Jiang, and Harold S. Park. "Machine learning accelerated search of the strongest graphene/h-BN interface with designed fracture properties." Journal of Applied Physics 133, no. 2 (2023): 024302. http://dx.doi.org/10.1063/5.0131576.

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Two-dimensional lateral heterostructures exhibit novel electronic and optical properties that are induced by their in-plane interface for which the mechanical properties of the interface are important for the stability of the lateral heterostructure. Therefore, we performed molecular dynamics simulations and developed a convolutional neural network-based machine learning model to study the fracture properties of the interface in a graphene/hexagonal boron nitride lateral heterostructure. The molecular dynamics (MD) simulations show that the shape of the interface can cause an 80% difference in

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4

Liu, Xiaolong, and Mark C. Hersam. "Borophene-graphene heterostructures." Science Advances 5, no. 10 (2019): eaax6444. http://dx.doi.org/10.1126/sciadv.aax6444.

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Integration of dissimilar two-dimensional (2D) materials is essential for nanoelectronic applications. Compared to vertical stacking, covalent lateral stitching requires bottom-up synthesis, resulting in rare realizations of 2D lateral heterostructures. Because of its polymorphism and diverse bonding geometries, borophene is a promising candidate for 2D heterostructures, although suitable synthesis conditions have not yet been demonstrated. Here, we report lateral and vertical integration of borophene with graphene. Topographic and spatially resolved spectroscopic measurements reveal nearly at

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5

Малевская, А. В., Н. Д. Ильинская та В. М. Андреев. "Разработка методов жидкостного травления разделительной меза-структуры при создании каскадных солнечных элементов". Письма в журнал технической физики 45, № 24 (2019): 14. http://dx.doi.org/10.21883/pjtf.2019.24.48795.17953.

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Investigation of the post-growth technique for fabricating multijunction solar sells based on the GaInP/GaAs/Ge heterostructure has been carried out. Investigated were methods of liquid chemical and electro-chemical etching of heterostructure layers. Technology for creating the separation mesa-structure has been developed. The improvement of the surface quality and of the profile of the mesa lateral side for heterostructures of different layer content has been achieved.

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6

Давыдов, С. Ю. "Простые модели латеральных гетероструктур". Физика твердого тела 60, № 7 (2018): 1389. http://dx.doi.org/10.21883/ftt.2018.07.46129.015.

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AbstractGeneral analytical expressions for densities of states of a lateral heterostructure, formed by the contact of two square semi-infinite lattices with single-band and two-band spectra, were obtained in the tight-binding approximation by the Green’s function method. The semi-elliptical density of states was used for numerical estimates, and the model of two interacting dimers was proposed to estimate the charge transfer. Application of this approach to description of lateral epitaxial and graphene-like heterostructures is discussed.

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7

Li, Xufan, Ming-Wei Lin, Junhao Lin, et al. "Two-dimensional GaSe/MoSe2misfit bilayer heterojunctions by van der Waals epitaxy." Science Advances 2, no. 4 (2016): e1501882. http://dx.doi.org/10.1126/sciadv.1501882.

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Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stack

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8

Wang, Zixuan, Wenshuo Xu, Benxuan Li, et al. "Selective Chemical Vapor Deposition Growth of WS2/MoS2 Vertical and Lateral Heterostructures on Gold Foils." Nanomaterials 12, no. 10 (2022): 1696. http://dx.doi.org/10.3390/nano12101696.

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Vertical and lateral heterostructures consisting of atomically layered two-dimensional (2D) materials exhibit intriguing properties, such as efficient charge/energy transfer, high photoresponsivity, and enhanced photocatalytic activities. However, the controlled fabrication of vertical or lateral heterojunctions on metal substrates remains challenging. Herein, we report a facile and controllable method for selective growth of WS2/MoS2 vertical or lateral heterojunctions on polycrystalline gold (Au) foil by tuning the gas flow rate of hydrogen (H2). We find that lateral growth is favored withou

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9

Davydov, S. Yu. "Simple Models of Lateral Heterostructures." Physics of the Solid State 60, no. 7 (2018): 1405–12. http://dx.doi.org/10.1134/s1063783418070089.

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10

Alharbi, Safia Abdullah R., Kazi Jannatul Tasnim, and Ming Yu. "The first-principles study of structural and electronic properties of two-dimensional SiC/GeC lateral polar heterostructures." Journal of Applied Physics 132, no. 18 (2022): 184301. http://dx.doi.org/10.1063/5.0127579.

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Two-dimensional (2D) lateral polar heterostructures, constructed by seamlessly stitching 2D polar materials, exhibit unique properties triggered by the in-plane charge transfer between different elements in each domain. Our first-principles study of 2D SiC/GeC lateral polar heterostructures has unraveled their interesting characteristics. The local strain induced by a lattice mismatch leads to an artificial uniaxial strain along the interface. The synergistic effect of such uniaxial strain, the microstructure of interface, and the width of domains modulates the feature of the bandgap with an i

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11

Dou, Letian. "(Invited) Two-Dimensional Organic-Perovskite Hybrid Materials and Heterostructures." ECS Meeting Abstracts MA2024-01, no. 12 (2024): 1001. http://dx.doi.org/10.1149/ma2024-01121001mtgabs.

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Epitaxial heterostructures based on oxide perovskites and III–V, II–VI and transition metal dichalcogenide semiconductors form the foundation of modern electronics and optoelectronics. Halide perovskites—an emerging family of tunable semiconductors with desirable properties—are attractive for applications such as solution-processed solar cells, light-emitting diodes, detectors and lasers. Their inherently soft crystal lattice allows greater tolerance to lattice mismatch, making them promising for heterostructure formation and semiconductor integration. Atomically sharp epitaxial interfaces are

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12

Zhao, Liuhuan, Lei Huang, Ke Wang, et al. "Mechanical and Lattice Thermal Properties of Si-Ge Lateral Heterostructures." Molecules 29, no. 16 (2024): 3823. http://dx.doi.org/10.3390/molecules29163823.

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Two-dimensional (2D) materials have drawn extensive attention due to their exceptional characteristics and potential uses in electronics and energy storage. This investigation employs simulations using molecular dynamics to examine the mechanical and thermal transport attributes of the 2D silicene–germanene (Si-Ge) lateral heterostructure. The pre-existing cracks of the Si-Ge lateral heterostructure are addressed with external strain. Then, the effect of vacancy defects and temperature on the mechanical attributes is also investigated. By manipulating temperature and incorporating vacancy defe

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13

Lin, Heng-Fu, Li-Min Liu, and Jijun Zhao. "2D lateral heterostructures of monolayer and bilayer phosphorene." Journal of Materials Chemistry C 5, no. 9 (2017): 2291–300. http://dx.doi.org/10.1039/c7tc00013h.

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14

Jiang, Jin-Wu. "One-dimensional transition metal dichalcogenide lateral heterostructures." Physical Chemistry Chemical Physics 23, no. 48 (2021): 27312–19. http://dx.doi.org/10.1039/d1cp04850c.

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The lateral stitching of two different transition metal dichalcogenide nanotubes yields a new tubular structure, a one-dimensional lateral heterostructure, which has an abnormal misfit strain distribution.

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15

Grachev A. A., Mruczkiewicz M., Beginin E. N., and Sadovnikov A. V. "Influence of elastic strains on the dipole spin wave spectrum in the lateral system of magnonic crystals with a piezoelectric layer." Physics of the Solid State 64, no. 9 (2022): 1331. http://dx.doi.org/10.21883/pss.2022.09.54176.45hh.

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In this work, we will reveal the regularities in the control of the dipole spin-wava spectra of in lateral heterostructures formed from two magnonic crystals with a piezoelectric layer placed on one of them. The electric field control of the spatial and transfer characteristics of dipole spin waves in lateral heterostructures is shown. Based on the finite element method, the influence of distributed elastic deformations on the magnitudes of internal magnetic fields in magnonic crystals is evaluated. Based on the results of numerical simulations, a physical interpretation of the transformation

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16

Cheng, Kai, Yu Guo, Nannan Han, Yan Su, Junfeng Zhang, and Jijun Zhao. "Lateral heterostructures of monolayer group-IV monochalcogenides: band alignment and electronic properties." Journal of Materials Chemistry C 5, no. 15 (2017): 3788–95. http://dx.doi.org/10.1039/c7tc00595d.

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17

Zhang, Yukai, Xin Qu, Lihua Yang, et al. "Two-Dimensional TeB Structures with Anisotropic Carrier Mobility and Tunable Bandgap." Molecules 26, no. 21 (2021): 6404. http://dx.doi.org/10.3390/molecules26216404.

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Two-dimensional (2D) semiconductors with desirable bandgaps and high carrier mobility have great potential in electronic and optoelectronic applications. In this work, we proposed α-TeB and β-TeB monolayers using density functional theory (DFT) combined with the particle swarm-intelligent global structure search method. The high dynamical and thermal stabilities of two TeB structures indicate high feasibility for experimental synthesis. The electronic structure calculations show that the two structures are indirect bandgap semiconductors with bandgaps of 2.3 and 2.1 eV, respectively. The hole

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18

Dou, Letian. "Two-dimensional Halide Perovskite Lateral Epitaxial Heterostructures." Video Proceedings of Advanced Materials 2, no. 2 (2021): Article ID 2021–0150—Article ID 2021–0150. http://dx.doi.org/10.5185/vpoam.2021.0150.

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19

Hannan Mouasvi, S., and H. Simchi. "Spin polarization in lateral two-dimensional heterostructures." Journal of Physics: Condensed Matter 33, no. 14 (2021): 145303. http://dx.doi.org/10.1088/1361-648x/abdffd.

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20

Zhang, Junfeng, Weiyu Xie, Jijun Zhao, and Shengbai Zhang. "Band alignment of two-dimensional lateral heterostructures." 2D Materials 4, no. 1 (2016): 015038. http://dx.doi.org/10.1088/2053-1583/aa50cc.

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21

Houssa, M., K. Iordanidou, A. Dabral, et al. "Contact resistance at graphene/MoS2 lateral heterostructures." Applied Physics Letters 114, no. 16 (2019): 163101. http://dx.doi.org/10.1063/1.5083133.

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22

Shi, Enzheng, Biao Yuan, Stephen B. Shiring, et al. "Two-dimensional halide perovskite lateral epitaxial heterostructures." Nature 580, no. 7805 (2020): 614–20. http://dx.doi.org/10.1038/s41586-020-2219-7.

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23

Ilg, Matthias, Klaus H. Ploog, and Achim Trampert. "Lateral piezoelectric fields in strained semiconductor heterostructures." Physical Review B 50, no. 23 (1994): 17111–19. http://dx.doi.org/10.1103/physrevb.50.17111.

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24

Engel, C., P. Baumgartner, M. Holzmann, J. F. Nützel, and G. Abstreiter. "Lateral photodetector devices on Si/SiGe heterostructures." Thin Solid Films 294, no. 1-2 (1997): 347–50. http://dx.doi.org/10.1016/s0040-6090(96)09245-0.

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25

Lorenz, P., V. Lebedev, F. Niebelschütz, et al. "Characterization of GaN-based lateral polarity heterostructures." physica status solidi (c) 5, no. 6 (2008): 1965–67. http://dx.doi.org/10.1002/pssc.200778550.

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26

Kim, Ji Eun, Won Tae Kang, Van Tu Vu, et al. "Ideal PN photodiode using doping controlled WSe2–MoSe2 lateral heterostructure." Journal of Materials Chemistry C 9, no. 10 (2021): 3504–12. http://dx.doi.org/10.1039/d0tc05625a.

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As the tight contact interface of the lateral PN junction enables high responsivity, specific detectivity, and fast response speed, atomic-scale two-dimensional (2D) lateral PN heterostructures are emerging as viable alternatives to silicon-based photodiodes.

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27

Fisichella, Gabriele, Giuseppe Greco, Salvatore di Franco, et al. "Hot Electron Transistors Based on Graphene/AlGaN/GaN Vertical Heterostructures." Materials Science Forum 858 (May 2016): 1137–40. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1137.

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This paper presents a study of the vertical current transport in a graphene (Gr) heterostructure with AlxGa1-xN/GaN, which represent the main building block of a novel high frequency device, the hot electron transistor (HET) with Gr base. The morphological and electrical properties of this heterostructures have been investigated at nanoscale by atomic force microscopy (AFM) and conductive atomic force microscopy (CAFM). In particular, local current-voltage measurements by the CAFM probe revealed the formation of a Schottky contact with low barrier height (∼0.41 eV) and excellent lateral unifor

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28

Ha, Chu Viet, Bich Ngoc Nguyen Thi, Pham Quynh Trang, et al. "Semiconductor and topological phases in lateral heterostructures constructed from germanene and AsSb monolayers." RSC Advances 13, no. 26 (2023): 17968–77. http://dx.doi.org/10.1039/d3ra01867a.

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29

Грачев, А. А., M. Mruczkiewicz, Е. Н. Бегинин та А. В. Садовников. "Влияние упругих деформаций на спектр дипольных спиновых волн в латеральной системе магнонных кристаллов с пьезоэлектрическим слоем". Физика твердого тела 64, № 9 (2022): 1345. http://dx.doi.org/10.21883/ftt.2022.09.52831.45hh.

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In this work, we will reveal the regularities in the control of the dipole spin-wava spectra of in lateral heterostructures formed from two magnonic crystals with a piezoelectric layer placed on one of them. The electric field control of the spatial and transfer characteristics of dipole spin waves in lateral heterostructures is shown. Based on the finite element method, the influence of distributed elastic deformations on the magnitudes of internal magnetic fields in magnonic crystals is evaluated. Based on the results of numerical simulations, a physical interpretation of the transformation

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30

Tian, Xiao-Qing, Lin Liu, Zhi-Rui Gong, et al. "Unusual electronic and magnetic properties of lateral phosphorene–WSe2 heterostructures." Journal of Materials Chemistry C 4, no. 27 (2016): 6657–65. http://dx.doi.org/10.1039/c6tc01978a.

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31

Liu, Yonghui. "Band engineering of Dirac materials in SbmBin lateral heterostructures." RSC Advances 11, no. 28 (2021): 17445–55. http://dx.doi.org/10.1039/d1ra02702f.

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Band engineering the electronic structures of Sb<sub>m</sub>Bi<sub>n</sub> lateral heterostructures (LHS) from antimonene and bismuthene is systematically investigated using first principles calculations.

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32

Yang, Yang, Yuhao Zhou, Zhuang Luo, Yandong Guo, Dewei Rao, and Xiaohong Yan. "Electronic structures and transport properties of SnS–SnSe nanoribbon lateral heterostructures." Physical Chemistry Chemical Physics 21, no. 18 (2019): 9296–301. http://dx.doi.org/10.1039/c9cp00427k.

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33

Tan, Ruishan, Yanzi Lei, Luyan Li, and Shuhua Shi. "Toward lateral heterostructures with two-dimensional MoX2H2 (X = As, Sb)." Physical Chemistry Chemical Physics 22, no. 39 (2020): 22584–90. http://dx.doi.org/10.1039/d0cp03530k.

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34

Qin, Huasong, Qing-Xiang Pei, Yilun Liu, and Yong-Wei Zhang. "The mechanical and thermal properties of MoS2–WSe2 lateral heterostructures." Physical Chemistry Chemical Physics 21, no. 28 (2019): 15845–53. http://dx.doi.org/10.1039/c9cp02499a.

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35

Chen, Xiaoshuang, Yunfeng Qiu, Guangbo Liu, et al. "Tuning electrochemical catalytic activity of defective 2D terrace MoSe2 heterogeneous catalyst via cobalt doping." Journal of Materials Chemistry A 5, no. 22 (2017): 11357–63. http://dx.doi.org/10.1039/c7ta02327h.

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36

Zhelev, Nikolay, Andrea E. Russell, Andrew Hector, et al. "Area-Selective Electrodeposition of Transition Metal Dichalcogenide Heterostructures." ECS Meeting Abstracts MA2025-01, no. 15 (2025): 1134. https://doi.org/10.1149/ma2025-01151134mtgabs.

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Two-dimensional (2D) transition metal dichalcogenides (TMD) have gathered significant attention in flexible electronics and optoelectronics research due to their unique electronic and optical properties attributed to their size-dependent band gap. Their layered structure befits the fabrication of heterostructures by combining different TMDs, translating directly to the formation of heterojunctions (p-n junction), advantageous for device applications.1 Recent advances show impressive monolayer interfaces, but many remain as a single device, derived from exfoliation processes on single flakes. E

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37

Yang, Hongchao, Jinjin Li, Lin Yu, Baibiao Huang, Yandong Ma, and Ying Dai. "A theoretical study on the electronic properties of in-plane CdS/ZnSe heterostructures: type-II band alignment for water splitting." Journal of Materials Chemistry A 6, no. 9 (2018): 4161–66. http://dx.doi.org/10.1039/c7ta10624f.

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38

Jin, Hao, Jianwei Li, Bin Wang, et al. "Electronics and optoelectronics of lateral heterostructures within monolayer indium monochalcogenides." Journal of Materials Chemistry C 4, no. 47 (2016): 11253–60. http://dx.doi.org/10.1039/c6tc04241d.

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39

Zheng, Biyuan, Chao Ma, Dong Li, et al. "Band Alignment Engineering in Two-Dimensional Lateral Heterostructures." Journal of the American Chemical Society 140, no. 36 (2018): 11193–97. http://dx.doi.org/10.1021/jacs.8b07401.

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40

Tian, Xiaoqing, Lin Liu, Yu Du, Juan Gu, Jian-bin Xu, and Boris I. Yakobson. "Variable electronic properties of lateral phosphorene–graphene heterostructures." Physical Chemistry Chemical Physics 17, no. 47 (2015): 31685–92. http://dx.doi.org/10.1039/c5cp05443e.

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41

Zhang, Xin-Quan, Chin-Hao Lin, Yu-Wen Tseng, Kuan-Hua Huang, and Yi-Hsien Lee. "Synthesis of Lateral Heterostructures of Semiconducting Atomic Layers." Nano Letters 15, no. 1 (2014): 410–15. http://dx.doi.org/10.1021/nl503744f.

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42

Shimon, G., C. A. Ross, and A. O. Adeyeye. "Self-aligned Ni/NiFe/Fe magnetic lateral heterostructures." Journal of Applied Physics 118, no. 15 (2015): 153901. http://dx.doi.org/10.1063/1.4933096.

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43

Susarla, Sandhya, Luiz Henrique Galvão Tizei, Steffi Y. Woo, Alberto Zobelli, Odile Stephan, and Pulickel M. Ajayan. "Low Loss EELS of Lateral MoS2/WS2 Heterostructures." Microscopy and Microanalysis 25, S2 (2019): 640–41. http://dx.doi.org/10.1017/s1431927619003933.

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44

Aras, Mehmet, Çetin Kılıç, and S. Ciraci. "Lateral and Vertical Heterostructures of Transition Metal Dichalcogenides." Journal of Physical Chemistry C 122, no. 3 (2018): 1547–55. http://dx.doi.org/10.1021/acs.jpcc.7b08256.

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45

Bogaert, Kevin, Song Liu, Jordan Chesin, Denis Titow, Silvija Gradečak, and Slaven Garaj. "Diffusion-Mediated Synthesis of MoS2/WS2 Lateral Heterostructures." Nano Letters 16, no. 8 (2016): 5129–34. http://dx.doi.org/10.1021/acs.nanolett.6b02057.

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46

Ogikubo, Tsuyoshi, Hiroki Shimazu, Yuya Fujii, et al. "Continuous Growth of Germanene and Stanene Lateral Heterostructures." Advanced Materials Interfaces 7, no. 10 (2020): 1902132. http://dx.doi.org/10.1002/admi.201902132.

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47

Wang, Hao, Wei Wei, Fengping Li, Baibiao Huang, and Ying Dai. "Electronic and magnetic properties of the one-dimensional interfaces of two-dimensional lateral GeC/BP heterostructures." Physical Chemistry Chemical Physics 21, no. 17 (2019): 8856–64. http://dx.doi.org/10.1039/c9cp01196j.

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48

Jin, Hao, Vincent Michaud-Rioux, Zhi-Rui Gong, Langhui Wan, Yadong Wei, and Hong Guo. "Size dependence in two-dimensional lateral heterostructures of transition metal dichalcogenides." Journal of Materials Chemistry C 7, no. 13 (2019): 3837–42. http://dx.doi.org/10.1039/c9tc00063a.

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49

Kim, Gwangwoo, and Hyeon Suk Shin. "Spatially controlled lateral heterostructures of graphene and transition metal dichalcogenides toward atomically thin and multi-functional electronics." Nanoscale 12, no. 9 (2020): 5286–92. http://dx.doi.org/10.1039/c9nr10859a.

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This review demonstrates growth and electronic applications of lateral heterostructures of graphene and TMDs, highlighting key technologies controlling wafer-scale growth of continuous films for practical applications.

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50

Huo, Da, Yusong Bai, Xiaoyu Lin, et al. "Visualizing interface states in In₂Se₃-WSe₂ monolayer lateral heterostructures." Chinese Physics B, February 10, 2023. http://dx.doi.org/10.1088/1674-1056/acbaef.

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Abstract Recent findings of two-dimensional (2D) ferroelectric (FE) materials provide more possibilities for the development of 2D FE heterostructure electronic devices based on van der Waals materials and the application of FE devices under the limit of atomic layer thickness. In this paper, we report the in-situ fabrication and probing of electronic structures of In2Se3-WSe2 lateral heterostructures, compared with most vertical FE heterostructures at present. Through molecular beam epitaxy, we fabricated lateral heterostructures with monolayer WSe2 (three atomic layers) and monolayer In2Se3

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