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Dissertations / Theses on the topic 'Layer on Substrate'

Author: Grafiati

Published: 4 June 2021

Last updated: 4 February 2022

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1

amini, manesh navid. "HEAT TRANSFER IN MULTI-LAYER ENERGETIC NANOFILM ON COMPOSITES SUBSTRATE." Master's thesis, University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3191.

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The main purpose of this work is the physical understanding and the numerical description of the reaction of the dense metastable intermolecular composition (MIC). Energy density of MIC is much higher than conventional energetic material; therefore, MIC finds more applications in the propellant and explosive system. The physical model includes the speed of propagation and rate of reaction, and the relationship between the layer thickness, heat rate, and length of the flame based on physical model. In Part I of this thesis, a one-dimensional model based on Weihs was developed for 20 pairs of a

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Amini, Manesh Navid. "Heat transfer in multi-layer energetic nanofilm on composites substrate." Doctoral diss., University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4587.

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Numerical model was also used to estimate three major variables for a range of 30-60 m/s. In fact, the maximum combustion flame temperature that corresponds to flame speed along with the length of the flame, density of the product behind the flame, and maximum penetration depth in steady reaction, were calculated. These studies will aid in the design of nEM multilayer thin film. As further numerical and experimental results are obtained for different nEM thicknesses, a unified model involving various parameters can be developed.; The main purpose of this work is to find a physical and numerica

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Poehler, Scott A. "Transport Phenomena of CVD Few-Layer MoS2 As-grown on an Al2O3 Substrate." The Ohio State University, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=osu1440181154.

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4

Ainsworth, Joseph. "A numerical model of the propagation characteristics of multi-layer ridged substrate integrated waveguide." Thesis, University of Manchester, 2012. https://www.research.manchester.ac.uk/portal/en/theses/a-numerical-model-of-the-propagation-characteristics-of-multilayer-ridged-substrate-integrated-waveguide(23c69a19-694c-41c6-8870-5c09e5734362).html.

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A transmission line format is presented which takes the form of a Multilayer Ridged Substrate Integrated Waveguide, for which signal energy is transmitted within standard PCB substrates, within a wave-guiding structure formed from conducting tracks in the horizontal plane and arrays of through-plated vias in the vertical plane. The Substrate Integrated Waveguide (SIW) is a recent development into which research is so far concentrated on single-layer rectangular variants which, like traditional rectangular waveguide, are amenable to analytic computation of the cutoff eigenvalues. Recent publica

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Jeedigunta, Sathyaharish. "Development of cadmium selenide as an absorber layer for tandem solar cells." [Tampa, Fla.] : University of South Florida, 2004. http://purl.fcla.edu/fcla/etd/SFE0000279.

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6

Balkan, Haluk. "Thin layer with circular debonding over a substrate under either axisymmetric compression or thermal loading." Diss., The University of Arizona, 1996. http://hdl.handle.net/10150/187500.

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The objective of this dissertation is to present analytical solutions to the problem of a circular debonded thin film on a substrate subjected to either axisymmetric compressive stress or uniform thermal loading. In the case of the axisymmetric compressive stress, the solution method utilizes the three-dimensional equations of elastic stability while allowing the debonded region to be slightly open. The in-plane axisymmetric compressive stress is present only in the thin film. In the case of thermal loading, both the film and the substrate are subjected to the same uniform temperature variatio

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Chaitoglou, Stefanos. "Growth Study and Characterization of Single Layer Graphene Structures Deposited on Copper Substrate by Chemical Vapor Deposition." Doctoral thesis, Universitat de Barcelona, 2016. http://hdl.handle.net/10803/400402.

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Graphene was first isolated from graphite using the method called the tape by scientists at the University of Manchester (Andre Geim, Konstantin Novoselov); such work was later awarded the Nobel Prize in Physics (2010) highlighting its innovative contribution. Still, the method of the tape or mechanical exfoliation can not provide larger domains graphene some hundred micrometers. different technologies that could promote the synthesis of continuous layers of graphene large area in order to boost the potential for large-scale applications were needed. Synthesis chemical vapor deposition (CVD) o

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Manoi, Athikom. "Study of thermal properties of GaN-based HEMTs : the effects of thermal crosstalk, nucleation layer, and substrate." Thesis, University of Bristol, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.541641.

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9

Choudhury, Sakeb Hasan [Verfasser], and Robert [Akademischer Betreuer] Schlögl. "Atomic layer deposition of Manganese oxide on Carbon substrate for electrocatalytic water splitting / Sakeb Hasan Choudhury ; Betreuer: Robert Schlögl." Duisburg, 2020. http://d-nb.info/1217595023/34.

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10

Melo, Tede Fernandes. "Obtaining an photovoltaic solar cell based in CdS and TiO2 photosensitized with dye in glass substrate with conductive layer." Universidade Federal do CearÃ, 2014. http://www.teses.ufc.br/tde_busca/arquivo.php?codArquivo=12131.

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CoordenaÃÃo de AperfeÃoamento de Pessoal de NÃvel Superior<br>This research describes the process of obtaining a photovoltaic cell, since getting electrical conductor glasses used for the flow of electrons coming from the photovoltaic effect until the deposition of thin films of semiconductor titanium dioxide (TiO2) and cadmium sulfide (CdS) at each of these glasses. The use of natural or synthetic dyes deposited on titanium dioxide layer has the objective to increase the absorption spectrum of the TiO2, since sunlight emits most of its energy in the frequency range of visible light. After joi

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11

Epshteyn, Alla. "Design and Fabrication of a Membrane Integrated Microfluidic Cell Culture Device Suitable for High-Resolution Imaging." Scholar Commons, 2010. http://scholarcommons.usf.edu/etd/3517.

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Malaria remains a serious concern for people living and traveling to warm climates in Africa, Asia, and some parts of America. Understanding the mechanism of the malaria parasite in the liver phase could lead to important discoveries for preventative and treatment therapeutics before the disease develops into the blood stage. While in vitro liver cell culture models have been explored, a device that mimics the liver cell architecture with the capability of high-resolution imaging has never been created. In this research, a cell culture microfluidic device was designed and fabricated with a mem

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12

Hsiao, Shih-Hsiu. "Ion Beam Modification of Thin Film Barrier Layer and Deposition of Transparent Conductive Oxides on Polymer Substrate for Flexible Display." 京都大学 (Kyoto University), 2008. http://hdl.handle.net/2433/57295.

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13

Amirkhalili, Arezoo. "CdTe solar cells in substrate configuration : influence of Mo, Na, Cl and Mg treatments to promote recrystallization in the absorber layer." Thesis, Northumbria University, 2017. http://nrl.northumbria.ac.uk/32549/.

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Cadmium telluride (CdTe) is the leading thin-film photovoltaic material with efficiency up to 22.1 % (superstrate configuration). Devices developed in the substrate configuration allow roll-to-roll processing using lightweight and flexible substrates; however, exhibit a lower efficiency (13.6 % on glass substrate). This work focuses on the properties of metal-organic chemical vapour deposition (MOCVD) grown CdTe thin film and devices deposited on molybdenum (Mo) coated glass (substrate configuration). Particular attention is given to the role of sodium (Na) and chlorine (Cl). A Cl-treatment wa

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14

Schlebrowski, Torben [Verfasser], Christian B. [Akademischer Betreuer] Fischer, Stefan [Akademischer Betreuer] Wehner, Christian B. [Gutachter] Fischer, and Barbara [Gutachter] Hahn. "Plasma deposited thin layers of amorphous hydrogenated carbon (a-C:H) on selected biodegradable polymer films - Layer thickness and substrate dependent carbon hybridisation and its effect on layer stability / Torben Schlebrowski ; Gutachter: Christian B. Fischer, Barbara Hahn ; Christian B. Fischer, Stefan Wehner." Koblenz, 2020. http://d-nb.info/1213726859/34.

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15

Deboucq, Julien. "Caractérisation ultrasonore de structures à couche et à gradient de contraintes par ondes de surface haute fréquence générées par capteurs MEMS de type IDT -SAW." Thesis, Valenciennes, 2012. http://www.theses.fr/2012VALE0017/document.

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L’utilisation de revêtements et de couches minces déposés sur substrats est très recherchée dans de nombreuses applications. Les objectifs de ces revêtements et dépôts sont multiples (améliorer la durabilité des structures, leur résistance à l’usure et à la fatigue, etc.). D'autre part, les matériaux à gradient sont également développés en vue de répondre à de nouvelles exigences fonctionnelles, comme de meilleures tenues en température, en usure, en corrosion. Pour toutes ces applications, la caractérisation de ces revêtements et de ces matériaux à gradients, afin d’en déterminer leurs propri

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Yueh-Hua, Kuo. "Gas barrier layer deposited by Atomic Layer Deposition on polymeric substrate." 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2807200611032100.

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Kuo, Yueh-Hua, and 郭月華. "Gas barrier layer deposited by Atomic Layer Deposition on polymeric substrate." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/20349655102814372753.

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碩士<br>國立臺灣大學<br>材料科學與工程學研究所<br>94<br>In this study, we have successfully deposited an Al2O3 inorganic layer by atomic layer deposition (ALD) on polyimide (PI) substrates to achieve the requirement of OLEDs, 10−3 c.c./m2．day of OTR. Previous literatures have shown that transmission of gases through intrinsically impermeable films proceeds through microscopic defects in the films. The particles cause incomplete coverage of the PI surface by a barrier, which lead to ineffective water vapor and oxygen barriers. We demonstrated that the step coverage of the Al2O3-ALD barriers were far superior to t

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18

Jung-Ting, Chang, and 張榮庭. "Study of Atomic-Layer-Epitaxy Controlled MOCVD GaAs Epi-layer on Ge Substrate." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/19240612958150924137.

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碩士<br>國立交通大學<br>工學院半導體材料與製程設備學程<br>100<br>GaAs epitaxy, as nucleation layer, is grown on Ge substrate using ALE technique (Atomic Layer Epitaxy). According our study, triangle defects are formed on the surface of (In)GaAs/Ge due to lower decomposition rate of TMGa at low growth temperature (415°C). For ALE technique, the multilayer consisted of 10 pairs of Ga and As layers can improve epitaxial quality (15 arcsec) and surface morphology (1.22nm) of (In)GaAs/Ge heterostructure at 420°C. The growth temperature of 420°C is also adopted to suppress unwanted interdiffusion during (In)GaAs/Ge hetero

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Wu, Hsueh-mi, and 吳雪蜜. "Research on Power Integrity of Multi-Layer Ceramic Substrate." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/33615062444361677220.

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碩士<br>中華大學<br>電機工程學系碩士在職專班<br>100<br>The process of testing the Wafer with the Probe Card sometimes may cause the Wafer’s power supply to become unstable. When problems occur, the Probe Card manufacturer or the customer will waste time and money. In the integrated circuit design stage, one can use computer-aided tools to simulate and analyze power stability and integrity in the Multi-layer Ceramic Substrate that is used to place the probe, and find out what the problems are in order to improve circuit design. This method is used to improve the production time efficiency of Probe Cards and redu

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Chen, Jyun-Hong, and 陳俊宏. "EMI Shielding of Multi-layer Metallic Coatings on Aluminum Substrate." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/09832170296930532534.

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碩士<br>逢甲大學<br>材料科學所<br>97<br>Hydrogen reduction of absorbed nickel ions to nickel atoms on porous anodic aluminum oxide (AAO) . Electroless nickel-boron plating catalyzed by nickel atoms for the filling of porous AAO was performed. Further electroless nickel-phosphorus (Ni-P), copper (Cu), and/or cobalt-phosphorus (Co-P) platings were prepared for the electromagnetic interference(EMI) shielding and corrosion resistance tests. It has been shown that multi-layer coating with Co-P/Cu/Co-P/Cu/Ni-B/AAO/Al structure and total coating thickness 1200 nm possesses better EMI shielding effectiveness wit

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HE, TSUNG-TA, and 何宗達. "The Study on Process Improvement of Multi-Layer Organic Substrate." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/fvsbks.

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碩士<br>國立臺北科技大學<br>機電整合研究所<br>105<br>In this study micro electromechanical system (MEMS) technology was used to fabrication of multi-layer organic substrate protect structure, by lithography, copper electroplating, and mechanical polishing. Because of the line width limit of multi-layer organic substrate solder mask, that the small line width copper wire can’t not be protected. Therefore, the probe assembly to the multi-layer organic substrate, it must have been contact to the copper layer without any solder mask protect. The probe card is often faulty, so it is the focus of this paper to prote

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Tsao, Che-Hao, and 曹哲浩. "The Study on Surface Treatmemt of Multi-Layer Organic Substrate." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/tzhzc8.

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碩士<br>國立臺北科技大學<br>製造科技研究所<br>106<br>In this study addresses the core multilayer organic circuit substrate in the probe card, the circuit substrate surface contains a layer of green solder mask, used to distinguish signals, but because of the circuit’s tiny circuit, causes the solder mask to be indistinguishable and protect the circuit, so the circuit board is forced to design the exposed wire, make the probe and multi-layer organic circuit board at the time of signal transmission, may cause wire damage, make probe card life greatly reduced, affect product yield detection, to extend probe card

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Li, Jhih-Siang, and 李志翔. "GaN Layer Grown on Pattern Sapphire Substrate with Oxide Spacer." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/zavj63.

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碩士<br>國立交通大學<br>工學院半導體材料與製程設備學程<br>107<br>Light emission diodes (LEDs) have gradually become an indispensable lighting device in our daily life. They are widely used in traffic signs, screen backlights, special wavelength light sources for planting plants, and the application of red LED in biomedical. GaN-base light-emitting diodes mainly utilizes the flat sapphire substrate because of its suitable for high-temperature epitaxial process and low unit price, but its luminous efficiency is not good, so we use pattern sapphire substrate (PSS) to improve the internal quantum efficiency (IQE) and li

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YEH, CHIH-CHE, and 葉智哲. "The Study on Process Development of Multi-Layer Ceramic Substrate." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/7n5s36.

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碩士<br>國立臺北科技大學<br>製造科技研究所<br>107<br>This study uses MEMS technology to develop a multilayer ceramic test card circuit board process, including lithography process, electroplating copper process, chemical mechanical polishing (CMP) process. Because the carrier boards in the traditional test cards are mostly supplied by the semiconductor design company and the substrate made by the packaging factory, each carrier board can only test a small number of wafers. So this paper focus on increasing the number of test wafers and improving the durability of the test card. In this study, a multi-layer SU-

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Chang, Wen-Chuan, and 張文娟. "The Growth of YSZ Buffer Layer on Si(100) Substrate." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/75049036448576753753.

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碩士<br>國立中山大學<br>物理學系<br>87<br>High temperature superconductor have been discovered. In order to make the application of superconductor to be more widespread, we combine the technique of semi-conductor. We deposited superconductor thin films on silicon surface and expected it has good application. Because the lattice matches the(001) orientation of YBa2Cu3O7~5 and silicon, it is possible to choose silicon as substrate. But Ba and Si attend to interact as chemical compound, Ba-Si-O. So it can't becomed normal superconductor structure. This disadvantage will be overcome by growing a buffer-layer

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Chung, Wei-Gang, and 鍾維剛. "The Study of Warpage of 1 Layer Bare Window BGA Substrate." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/8zg6wk.

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碩士<br>國立高雄大學<br>電機工程學系-電子構裝整合技術產業碩士專班<br>107<br>In semiconductor packaging, substrate warpages and deformation due to mismatching of the thermal expansion coefficients of different materials among the package structure. In general, there are various mechanisms contributes to warpages ; such as, substrate being suffered by large shrinkage stress, uneven thickness of each layer in substrate, area ratio of residual copper, structure design and material selection of substrate. This paper is mainly about the main cause of the warpage of 1 layer bare substrate. The key issue for the warpage of the w

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Liu, Shih-Hsien, and 劉士賢. "Preparation for Single-layer FePt (001) Thin Films on Glass Substrate." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/30505122965048760334.

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碩士<br>逢甲大學<br>材料科學所<br>99<br>Single-layered Fe52Pt48 films with thickness of 5 nm to 60 nm were deposited on Corning 1737 glass substrates at room temperautre (RT) by RF magnetron sputtering. To obtain (001) preferred orientation, the as-deposited films were annealed at 300 to 800 oC with heating rate of 20 oC/s and hold for 0 to 3600s. The as-deposited films were annealed by high vacuum – rapid thermal annealling. Crystallographic structure was examined by conventional x-ray diffractometry. In-plane and out-of-plane magnetic properties of the samples were mesasured by vibrating sample magnet

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Hung, Kuen-Ting, and 洪坤廷. "The barrier layer shape of porous AAO substrate and its application." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/06971908451225784721.

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碩士<br>國立雲林科技大學<br>電子與資訊工程研究所<br>95<br>The pore array of anodic alumina oxide (AAO) was achieved by good anodization condition. This research used a high pure aluminum sheet (99.999%), electropolished under the conditions of 20V, 25℃, 20min in the mixed solution composed of sulfuric acid (33%) - phosphoric acid (33%) - DI water (33%). The conditions of anodization were 40V, 0.3M oxalic acid solution, 5℃, 8 hours. Observed by SEM, the diameter of AAO pores was 30 nm. Highly ordered AAO array was obtained and the thickness of AAO was 20μm. After some pore widening process, Ni nanowires were forme

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Pu, Jun-Liang, and 蒲俊良. "Investigation of GaN layer grown on Si(111) substrate using an LT GaN/ultrathin AlN wetting layer." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/e394c2.

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碩士<br>崑山科技大學<br>電機工程研究所<br>91<br>In this thesis, GaN and its relative materials are the key issue for developing the blue-green devices. In this paper, we study the material characteristic of GaN by X-ray diffraction (XRD) measurement and Photoluminescence (PL). Firstly, we introduce the source of developing GaN, metal organic chemical vapor phase deposition (MOCVD), X-ray diffraction (XRD), photoluminescence and AFM measurement. Then we do the systematic research on GaN under different growth condition. We analyze the GaN crystal quality affected by the growth flow of buffer layer. Finally, w

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Chen, Bor-Tsong, and 陳柏璁. "REFLECTARRAY USING VARIABLE SIZE PATCH WITH SLOT IN A TWO-LAYER SUBSTRATE." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/61736027341739434205.

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碩士<br>大同大學<br>通訊工程研究所<br>93<br>This thesis demonstrates a new configuration of reflectarray using variable size patch with slot (RVSPS) as the construction element. This configuration improves phase curve of the reflectarray using variable size patch (RVSP) in FR4 material. RVSPS has a more lineaer phase curve in comparison with that of the RVSP. Experimental results of RVSPS showed that the maximum gain is 24.45dB at 11.4GHz. It has a 1.5-dB gain bandwidth of 19.3%. The aperture efficiency is 31.48% and the cross-polarization level is bellow around 25dB.

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Kuo, Che Cheng, and 郭哲成. "Characteristic of Ⅲ-Nitride light emission diode buffer layer on Si substrate." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/99817776135275497995.

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碩士<br>長庚大學<br>光電工程研究所<br>93<br>GaN epitaxial substrates are mainly on sapphire and SiC. Since sapphire or SiC has many disadvantages such as cost a lot of money, difficult to grow high quality large size bulk substrate, some scientists try to grow the high-quality GaN film on silicon. Actually, silicon has many advantages of its high crystal quality, low cost, large area size, and the most important is silicon substrate has the potential application in integration of well-established Si electronics industry. However, due to the large mismatch of lattice constant (16.9%) and the thermal expansi

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Chien, Hsiao-Ching, and 錢曉晴. "Circular Polarized Slotted Antenna Array Based on Double-Layer Substrate Integrated Waveguide." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/10370523284292600048.

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碩士<br>國立交通大學<br>電信工程研究所<br>99<br>The thesis based on the concept of the waveguide coupling employs resonant slots to couple power from the main waveguide to crossed branch waveguides. An antenna array which is composed of the circularly polarized (CP) four-slots radiated elements can result in a high gain at the broadside direction. The side lobe level (SLL) can be greatly reduced by appropriate design. In the substrate integrated waveguide (SIW), the guided wavelength is less than the wavelength in air. When the array spacing is around a guided wavelength, the grating lobe can be avoided.

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Sheng, Chung Cheng, and 鍾景生. "Stress Relaxation Study of Aluminum/Polyimide Bi-Layer Thin Films on Substrate." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/77185773676535058090.

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Tsai, Yu-Jer, and 蔡有哲. "Property study of the buffer layer for copper films on the glass substrate." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/99747940329413428333.

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碩士<br>國立臺灣海洋大學<br>材料工程研究所<br>95<br>The main objective of this study is about the viability of the application for improving the adhesion between a copper film and a glass substrate, thereby preventing copper film from peeling off from the glass substrate in the TFT-LCD process. If we can not effectively improve the adhesion between a copper film and a glass substrate, then copper can not be used as the material of the Gate wire to replace aluminum in the present process technology. In order to solve the above problem, we use a buffer layer to improve the adhesion between them. Cost and practic

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Hsu, Chun-Chih, and 徐俊智. "Influence of Buffer Layer and Substrate Pretreatment on the Properties of ZrMoN Films." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/wc68ru.

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碩士<br>龍華科技大學<br>機械工程系碩士班<br>107<br>In this study, a DC magnetron sputtering system was used to deposit multilayer films on nitride (MoN / ZrMoN) glass and SUS304 stainless steel substrates. The effects of reactive magnetron sputtering deposition parameters on MoN / ZrMoN rigid films were investigated. Change the Zr power of ZrMoN (50~250W), the thickness of intermediate MoN film (225~690nm), and the pretreatment of substrate plasma etching (duration 5~15min), and the microstructure and mechanical properties of MoN / ZrMoN multilayer. Impact. Film properties were measured by SEM, EDS, XRD, nano

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古皓齊. "Effect of AlN Buffer Layer on the GaN Grown on Patterned Sapphire Substrate." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/93247d.

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碩士<br>國立交通大學<br>工學院半導體材料與製程設備學程<br>105<br>High brightness light emitting diodes(LEDs) have been highly demand in various fields like using on road light, car headlight, backlight and projector. For the purpose of next-generation application of solid-state lighting, LEDs with higher internal and external quantum efficiency are required. The common material of LEDs is gallium nitride(GaN). We usually use sapphire as substrate to epitaxy GaN. There are still many problems between sapphire and GaN such as lattice mismatch and thermal expansion coefficient difference, which will make defects and de

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Wu, Jin Wei, and 吳晉瑋. "Silicon Substrate for GaN Epi-Growth by Stress Compensation Layer and Nanostructure Technique." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/80556929371868332815.

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碩士<br>國立清華大學<br>電子工程研究所<br>103<br>III-V material such as GaN is very popular and promising semiconductor material , and can be obtained by external epitaxy growth . There are several kinds of substrate are developed in order to match the desire about getting those material ,especially silicon. Silicon is common use in industry and low cost material compared to sapphire and SiC .It also more easier to achieve large-scale growth and mass production due to substrate size , but GaN on silicon will result in many problem caused by material property difference between them . The most critical issue

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Kuo, Yen-Ting, and 郭彥廷. "Improved GaN quality by modifying sputter AlN buffer layer on pattern sapphire substrate." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/n5kh42.

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碩士<br>國立交通大學<br>材料科學與工程學系所<br>106<br>Light emitting diodes(LEDs) have been replaced incandescent-filament lamp due to their advantages of small size、long lifetime and high efficiency. There are a lot of applications such as car headlight, screen panel and traffic lights. The material of LEDs is GaN, but GaN is lack of own’s substrate. As a result, we usually use sapphire as substrate to epitaxy GaN. There are still many problems between sapphire and GaN such as lattice mismatch and thermal expansion coefficient difference, which will make defects duing epitaxial growth and degrade internal qua

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Sung, Po-Ting, and 宋柏廷. "Influence of AlN Layer Thickness on Passivation Effect for N-type Silicon Substrate." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/58581133955213762331.

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碩士<br>國立臺灣科技大學<br>光電工程研究所<br>105<br>There are two parts in the study. First, deposit the AlN layers in different N 2 flow rate and analyzing the leakage current density between grain size and N2 flow rate. Second, analyzing the effective fixed charge (Qeff ), insulator layers trap charge density (Not) and interface trap density (Dit ) of different AlN layers thickness. Then, discusses the minority carrier lifetime influencing by the Qeff , Not , and Dit . We observe that the grain size of AlN layers sputtering with N 2 /Ar = 2/20 is about 24.6 nm, which is smaller than the others AlN layers w

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Lin, Ya-Wen, and 林雅雯. "The study of diamond growth on Si (001) substrate using TiN buffer layer." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/34800234368202312010.

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碩士<br>國立交通大學<br>材料科學與工程學系<br>98<br>This thesis focuses on the study of growth of oriented diamond film on Si (001) substrate using TiN buffer layer by microwave plasma chemical vapor deposition (MPCVD). The effect of various deposition conditions on the growth of TiN buffer layer by pulsed laser deposition (PLD) was firstly explored to obtain high-quality TiN films on Si substrate by varying N2 flow and laser frequency. In the second part, the fabricated TiN/Si (100) was used as the substrate for further growth of oriented diamonds by MPCVD with bias-enhanced nucleation pretreatment. Finally,

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CHIEH, LIEN WEI, and 連偉傑. "Using TiN as Buffer Layer and Reflective Mirror of LEDs on Silicon Substrate." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/18264488471948678989.

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碩士<br>長庚大學<br>光電工程研究所<br>93<br>Since the technique of metal organic chemical vapor deposition(MOCVD) was quickly developed, was also applied generally to deposit crystal and obtained good crystal quality. Recently, the research and application of chemical composition semiconductor is more look at attentively and is also one of the focal point technique events that country advance spare no effort. Among them, AlGaInN light emitting diode applied on large scale in communicationֽilluminationֽtraffic etc is to know very well , its luminescence wavelength is red to yellow-green between visible opti

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Lin, Hou-Cheng, and 林厚丞. "An Investigation on the Hemocompatibility and Adhesion of Heparin/Collagen Polyelectrolyte Multilayers Coated on Titanium Substrate by Layer-by-Layer Technique – Dopamine as the Interlayer between Coatings and Titanium Substrates." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/88443753775045369875.

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碩士<br>國立臺灣海洋大學<br>機械與機電工程學系<br>102<br>This thesis used layer by layer technology to coat heparin/collagen multilayer on titanium substrates. Dopamine as the interlayer between coatings and titanium substrates was applied and the coating’s hemocompatibility and adhesion was investigated. Two different pretreatments on sample. One was putting samples into 5M NaOH solution 60℃for 24 hours another was putting samples into 2 mg/ml dopamine solution for 8 hours. After finish the pretreatment that we took samples immersed in poly-L-lysine solution for 30 minutes to obtain positive ion. And next step

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Chiou, Chuang-Fu, and 邱創富. "Electrical and humidity sensing properties of reduced graphene oxide thin film fabricated by layer-by-layer covalently anchoring on flexible substrate." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/06803273987508265099.

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碩士<br>中國文化大學<br>化學系應用化學碩士班<br>102<br>Novel flexible humidity sensors were fabricated by layer-by-layer (LBL) covalently bonding graphene oxide (GO) to a gold electrode on a plastic substrate using a peptide chemical protocol and then reducing in-situGO film to a partially reduced GO film. The effect of the duration of reduction of GO film on the electrical and humidity propertiesof the reduced GO film was investigated. This flexible impedance-type humidity sensor exhibited a strong water resistance, a wide working range of humidities, a short response/recovery time, a weak dependence on temper

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CHEN, HSU-CHUN, and 陳許峻. "Study of Silicon Nitride Barrier Layer by Plasma EnhancedChemical Vapor Deposition on Flexible Substrate." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/46952365808985964733.

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碩士<br>中原大學<br>化學工程研究所<br>96<br>Flat display on plastic substrate could be lightweight, thin and flexible. However, the intrinsic high gas and water vapor permeation reduces the devices lifetime and reliability. The improvement in moisture resistance characteristics of plastic substrate should be resolved for further applications. In this study, We used Plasma Enhanced Chemical Vapor Deposition System（PECVD）to grow barrier thin film（SiNx）of high uniformity at low temperature（64℃）. Furthermore, the barrier property of SiNx thin films was improved by plasma surface treatment. From the WVTR result

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Chao-WeiHsu and 許晁瑋. "Nanoepitaxy of III–V epi–layer onto nanopatterned and nanoscale stripe patterned Si substrate." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/39654694959280214262.

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博士<br>國立成功大學<br>微電子工程研究所碩博士班<br>101<br>GaAs and InAs are grown on geometric nanopatterned and nanoscale stripe patterned Si substrates with SiO2 as a mask by metal–organic vapor–phase epitaxy. Theoretical models suggest the possibility of strain relief and dislocation reduction via a decrease in the initial epitaxial areas to the nanoscale regime. Threading dislocations, which are stacked on the lowest–energy facet plane, are trapped by the SiO2 patterns, reducing the number of dislocations. For GaAs on a 55–nm round–hole patterned Si substrate with SiO2 as a mask, the etching pit density of t

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Yang, Jeff, and 楊健理. "Optical Characterization of GaN Epitaxial Layer and LED Structure Grown on Patterned Sapphire Substrate." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/33823382300310879436.

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碩士<br>長庚大學<br>電子工程研究所<br>93<br>In the front of the article, the optical characteristics of GaN epitaxial layer on the patterned sapphire substrate with different trench depth were discussed. To study the effects of dislocation density and mechanism, the samples(GaN epilyers) were grown by SR-2000 MOVPE system on patterned sapphire substrate. After that, the issue is the effect of light way of LED structure on the patterned sapphire substrate. Tracepro optical software was used to track to light way with the model similar to LED and figure out the effect of light way and trend on patterned sapp

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Huang, Shih-An, and 黃仕安. "A Study of Automatic Optical Inspection for Interfacial Stress of Flexible Multi-Layer Substrate." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/ub3jpp.

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碩士<br>國立臺灣海洋大學<br>機械與機電工程學系<br>106<br>The purpose of this study is to use the relationship between stress and optical interference to detect the interfacial stress and residual interfacial stress of flexible conductive substrates. Polyethylene terephthalate (PET) / indium tin oxide (ITO) composite material (composite material) is used as a double-layer flexible conductive substrate in this study. Polarized light passes through the substrates and a tensile stress is applied to the sample simultaneously. The light is divided into two types of light, which are faster and slower, when the polarize

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Huang, Teng-hsing, та 黃鐙興. "Growth mechanism and defects analyses of ZnO epitaxial layer on γ- LiAlO2(200) substrate". Thesis, 2008. http://ndltd.ncl.edu.tw/handle/89jw4e.

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Huang, Shiang-Jau, and 黃祥釗. "Design of Multi-layer Planar Circuits and Substrate Integrated Waveguide Transition for V-band." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/90697496690400167276.

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碩士<br>國立臺灣大學<br>電信工程學研究所<br>97<br>This thesis continues previous works of two kinds of vertical transitions between microstrip line and substrate integrated waveguide (SIW), and a vertical transition between coplanar waveguides (CPW) utilizing flip-chip method. All these structures are fabricated on low-temperature co-fired ceramic (LTCC) or RO4003 substrate. This thesis also analyzes the equivalent circuits of the transition structures. The first transition design is realized with a shorted via between the end of the microstrip line and the bottom layer of SIW. A current is induced on the via

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Chih, Shih-Yu, and 邱仕宇. "nvestigation of High Quality GaN on Si (111) Substrate by Using Nitride Buffer Layer." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/41383913371137131095.

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碩士<br>國立清華大學<br>材料科學工程學系<br>91<br>Abstract III-V nitride has attracted much attention in the late 20th century because of its many merits such as tunable direct band gap which cover the lasing wavelength from 300nm to 800nm, highly reliable device property in harsh environment (high temperature) and high luminescence efficiency. It can be made for optical data storage device, high frequency device (RF), and high brightness LED or LD. To take advantage of well matured silicon microelectronic technology, using Si as a substrate to grown high quality GaN film maybe a shortcut to realiz

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