Academic literature on the topic 'LC oscillator'

The main aim of this thesis is to implement a voltage-controlled oscillator for a Galileo/GPS receiver with a center frequency of 1.5 GHz in 150 nm CMOS process. As the designed VCO has to be integrated in a phase locked loop, VCO gain is selected high enough for the PLL to lock even with process variations. A new state of art architecture called double harmonic tuned VCO is selected and designed for this GPS application. It uses a complex combination of inductors and capacitors to reduce phase-noise of the VCO by suppressing second harmonic oscillations in the tail node of VCO. The designed VCO shows significant improvement in phase-noise performance compared to a normal LC tank VCO by reducing phase-noise around 4 dBc/Hz. The VCO has a phase-noise of -128 dBc/Hz at 1 MHz offset from center frequency with a power consumption of 5 mW and a tuning range of about 257 MHz for a 1 V tuning voltage range.

The explosive growth in wireless communications has led to an increased demand for wireless products that are cheaper, smaller, and lower power. Recently there has been an increased interest in using CMOS, a traditional digital and low frequency analog IC technology, to implement RF components such as mixers, voltage controlled oscillators (VCOs), and low noise amplifiers (LNAs). Future mass-market RF links, such as BlueTooth, will require the potentially low-cost single-chip solutions that CMOS can provide. In order for such single-chip solutions to be realized, RF circuits must be designed that can operate in the presence of noisy digital circuitry. The voltage controlled oscillator (VCO), an important building block for RF systems, is particularly sensitive when exposed to an electrically noisy environment. In addition, CMOS implementations of VCOs have been hampered by the lack of high-quality integrated inductors. This thesis focuses on the design of a fully integrated 2.5 GHz LC CMOS VCO. The circuit is intended as a vehicle for future mixed RF/digital noise characterization. The circuit was implemented in a 0.35 um single poly, 4 metal, 3.3 V, CMOS process available through MOSIS. The oscillator uses a complementary negative transconductance topology. This oscillator circuit is analyzed as a negative-resistance oscillator. Monolithic inductors are designed using full-wave electromagnetic field solver software. The design of an "inversion-mode" MOS (I-MOS) tuning varactor is presented, along with a discussion of the effects of varactor nonlinearity on VCO performance. I-MOS varactors are shown to have substantially improved tuning range (and tuning curve linearity) over conventional MOS varactors. Practical issues pertaining to CMOS VCO circuit design, layout, and testing are also discussed. The characterization of the VCO and the integrated passives is presented. The VCO achieves a best-case phase noise of -106.7 dBc/Hz at 100 kHz offset from a center frequency of 2.73 GHz. The tuning range is 425 MHz (17%). The circuit consumes 9 mA from a 3.3 V supply. This represents excellent performance for CMOS oscillator designs reported at this frequency. Finally, several recommendations for improvements in oscillator performance and characterization are discussed.<br>Master of Science

Presented in this work is a novel design technique for a low-phase-noise high-frequency CMOS voltage-controlled oscillator. Phase noise is generated from electrical noise near DC, the oscillation frequency, and its harmonics. In CMOS technology, low-frequency flicker noise dominates the close-in phase noise of the VCO. The proposed technique minimizes the VCO phase noise by seeking to eliminate the effect of flicker noise on the phase noise. This is accomplished by canceling out the DC component of the impulse sensitivity function (ISF) corresponding to each flicker-noise source, thus preventing the up-conversion of low-frequency noise into phase noise. The proposed circuit topology is a modified version of the complementary cross-coupled transconductance VCO, where additional feedback paths are introduced such that a designer can choose the feedback ratios, transistor sizes, and bias voltages to achieve the previously mentioned design objectives. A step-by-step design algorithm is presented along with a MATLAB script to aid in the computation of the ISFs and the phase noise of the VCO. Using this algorithm, a 5-GHz VCO was designed and fabricated in a 0.18μm CMOS process, and then tested for comparison with simulated results.

<p>This thesis studies the problems with maintaining the spectral purity of fully integrated VCO circuits for radio frequency synthesizers in single-chip system designs. LC tank circuit oscillator circuits are shown to convert amplitude variation in the tank circuit voltage into frequency modulation, if voltage dependent capacitances are present in the tank circuit. Since the parasitic capacitances of the gain transistors and the capacitance of the varactor device in a VCO circuit are voltage dependent, any interfering signal, that is able to modulate the amplitude of the VCO tank circuit voltage waveform, is converted to FM sidebands in the output signal spectrum. It is also shown that the AM-FM conversion may be prohibited under some conditons.</p><p>A new method for simulating the steady-state voltage waveform of an LC tank circuit oscillator is presented. In this method, one complete oscillation cycle is simulated piecewise, employing the known solution of the damped harmonic motion equation. The voltage-dependent parameters of the equation are updated in the beginning of each segment. The steady state is found by matching the initial conditions and the final conditions of one complete oscillation cycle, using a numerical optimization algorithm. The method avoids finding the solution of the differential equation with variable coefficients.</p><p>For minimizing the sensitivity of integrated VCO circuits to the intra-chip noise sources, this work proposes minimizing the AM-FM conversion by designing the VCO in the way that the voltage dependent capacitances of the oscillator core circuit are made to cancel each other’s effects on the oscillation frequency at some amplitude level. Experimental results demonstrate 15 dB suppression of the sidebands due to the modulated tail current noise in a negative-Gm spiral inductor PFET VCO circuit. The varactorless prototype circuit is implemented in a 0.35 µm CMOS technology. The measured tuning range of the 3 GHz back gate tuned VCO circuit is 10 %, and the current consumption of the core circuit is 2.5 mA. The phase noise level is -110 dBc at 500 kHz offset frequency.</p><p>The last part of this thesis discussses the problems with modeling and characterizing small MOS transistors, and presents characterization of 28 µm wide MOSFSET devices. A new method for extracting the drain and source electrode resistances from the measured Z22 response is presented. The response is measured at a constant and very low signal frequency, with Vds = 0 V and with various gate-source bias voltage values. At low signal frequencies, the equivalent diagram of the MOSFET is dramatically simplified, since all parasitic capacitors of the device may be ignored. Consequently, the number of degrees of freedom in the curve fitting is reduced to only two.</p>

Les travaux de thèse présentés se situent dans le contexte de la conception de circuits intégrés en technologie CMOS avancée pour des applications radiofréquence à très faible consommation de puissance. Les circuits sont conçus à travers deux concepts. Le premier est l'utilisation du coefficient d'inversion qui permet de normaliser le transistor en fonction de sa taille et de sa technologie, ceci permet une analyse rapide pour différentes performances visées ou différentes technologies. La deuxième approche est d'utiliser un facteur de mérite pour trouver la polarisation la plus adéquate d'un circuit en fonction de ses performances. Ces deux principes ont été utilisés pour définir des méthodes de conception efficaces pour deux blocs radiofréquence : l'amplificateur faible bruit et l'oscillateur<br>Thesis work are presented in the context of the integrated circuits design in advanced CMOS technology for ultra low power RF applications. The circuits are designed around two concepts. The first is the use of the inversion coefficient to normalize the transistor as a function of its size and its technology, this allows a quick analysis for different performances or different technologies. The second approach is to use a figure of merit to find the most appropriate polarization of a circuit based on its performance. These two principles were used to define effective design methods for two RF blocks: low noise amplifier and oscillator

Osciladores Controlados por Tensão (VCOs - Voltage-Controlled Oscillators) são circuitos de grande importância em sistemas de comunicação por radiofrequência atuais. Muitos trabalhos de pesquisa recentes têm focado no desenvolvimento de VCOs para aplicações em uma faixa muito grande de frequências (isto é, suportando amplo tunning range). O desenvolvimento de VCOs com uma ampla faixa de sintonia tem motivação na abertura de bandas de frequência, que até pouco tempo estavam licenciadas apenas para usos específicos, porém agora estão também abertas para a utilização de sistemas de rádios cognitivos. A ideia é que o rádio cognitivo tenha recursos para detectar se um canal (ou faixa de frequência) está sendo usado e, em caso de o canal não estar sendo usado, o rádio cognitivo deve se reconfigurar para operar nesse canal. Desse modo, os rádios cognitivos devem possuir um alto grau de reconfigurabilidade, de forma que possam operar em uma faixa muito ampla de frequências. Esse requisito exige o uso de de VCOs com um amplo tunning range. Este trabalho apresenta um projeto completo de um LC-VCO com uma larga faixa de frequência de operação (widedand). Um amplo tunning range foi obtido a partir do chaveamento (ou programação) do valor da capacitância total do tanque-LC do VCO, gerando assim várias sub-bandas de frequência. O ganho do VCO (KVCO) manteve-se com pequenas variações para todas as subbandas de frequência, com um valor médio de 88.6MHz, sendo 112MHz e 80MHz os valores máximo e mínimo, respectivamente. O ruído de fase variou de -118.4dBc/Hz a -107.4dBc/Hz para as portadores em 3.7GHz e 8.1GHz, respectivamente, enquanto que a potência dissipada do circuito LC-VCO variou de 1.8mW a 5.6mW para todo o tunning range. Para a figura de mérito power-frequency-tunning-normalized (FOMPFTN), os valores obtidos foram na faixa 3.1dB e 11.2dB, comparáveis com a maioria dos trabalhos publicados na área.<br>Voltage-Controlled Oscillators (VCOs) are very important circuits in current radio frequency communication systems. Much research has been focused recently on developing wideband VCOs in CMOS. The motivation on wideband VCOs is based on the opening of frequency bands, which until recently were licensed for specific uses, for use by cognitive radio systems. The idea is that cognitive radio must have the ability to detect whether a channel (or frequency band) is being used and if the channel is not being used, the cognitive radio must reconfigure itself to operate on that channel. Thus, cognitive radios should possess a high degree of reconfigurability, so that they can operate in a very wide frequency range. This requires the use of VCOs with a wide tunning range. This work presents a complete design of a LC-VCO with a wide operating frequency range (widedand). A wide tunning range has been obtained from the switching (or programming) the value of the total capacitance of the LC-tank of the VCO, thereby generating multiple frequency sub-bands. The VCO gain (KVCO) was maintained with small variations for all frequency sub-bands, with an average value of 88.6MHz, with 80MHz and 112MHz for the minimum and maximum values, respectively. The phase noise ranged from -118.4dBc/Hz to -107.4dBc/Hz for carriers at 3.7GHz and 8.1GHz, respectively, while the power dissipated in the LC-VCO circuit ranged from 1.8mW to 5.6mW for all tunning range. For the figure of merit power-frequency-tuning-normalized (FOMPFTN), the results were in the 3.1dB to 11.2dB range, comparable to most recently published works.

Like cell to the human body, transistors are the basic building blocks of any electronics circuits. Silicon has been the industries obvious choice for making transistors. Transistors with large size occupy large chip area, consume lots of power and the number of functionalities will be limited due to area constraints. Thus to make the devices smaller, smarter and faster, the transistors are aggressively scaled down in each generation. Moore's law states that the transistors count in any electronic circuits doubles every 18 months. Following this Moore's law, the transistor has already been scaled down to 14 nm. However there are limitations to how much further these transistors can be scaled down. Particularly below 10 nm, these silicon based transistors hit the fundamental limits like loss of gate control, high leakage and various other short channel effects. Thus it is not possible to favor the silicon transistors for future electronics applications. As a result, the research has shifted to new device concepts and device materials alternative to silicon. Carbon is the next abundant element found in the Earth and one of such carbon based nanomaterial is graphene. Graphene when extracted from Graphite, the same material used as the lid in pencil, have a tremendous potential to take future electronics devices to new heights in terms of size, cost and efficiency. Thus after its first experimental discovery of graphene in 2004, graphene has been the leading research area for both academics as well as industries. This dissertation is focused on the analysis and optimization of graphene based circuits for future electronics. The first part of this dissertation considers graphene based transistors for analog/radio frequency (RF) circuits. In this section, a dual gate Graphene Field Effect Transistor (GFET) is considered to build the case study circuits like voltage controlled oscillator (VCO) and low noise amplifier (LNA). The behavioral model of the transistor is modeled in different tools: well accepted EDA (electronic design automation) and a non-EDA based tool i.e. \simscape. This section of the dissertation addresses the application of non-EDA based concepts for the analysis of new device concepts, taking LC-VCO and LNA as a case study circuits. The non-EDA based approach is very handy for a new device material when the concept is not matured and the model files are not readily available from the fab. The results matches very well with that of the EDA tools. The second part of the section considers application of multiswarm optimization (MSO) in an EDA tool to explore the design space for the design of LC-VCO. The VCO provides an oscillation frequency at 2.85 GHz, with phase noise of less than -80 dBc/Hz and power dissipation less than 16 mW. The second part of this dissertation considers graphene nanotube field effect transistors (GNRFET) for the application of digital domain. As a case study, static random access memory (SRAM) hs been design and the results shows a very promising future for GNRFET based SRAM as compared to silicon based transistor SRAM. The power comparison between the two shows that GNRFET based SRAM are 93% more power efficient than the silicon transistor based SRAM at 45 nm. In summary, the dissertation is to expected to aid the state of the art in following ways: 1) A non-EDA based tool has been used to characterize the device and measure the circuit performance. The results well matches to that obtained from the EDA tools. This tool becomes very handy for new device concepts when the simulation needs to be fast and accuracy can be tradeoff with. 2)Since an analog domain lacks well-design design paradigm, as compared to digital domain, this dissertation considers case study circuits to design the circuits and apply optimization. 3) Performance comparison of GNRFET based SRAM to the conventional silicon based SRAM shows that with maturation of the fabrication technology, graphene can be very useful for digital circuits as well.