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Academic literature on the topic 'LF S-parameter'
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Journal articles on the topic "LF S-parameter"
Sandkuhler, J., Q. G. Fu, and M. Zimmermann. "Spinal pathways mediating tonic or stimulation-produced descending inhibition from the periaqueductal gray or nucleus raphe magnus are separate in the cat." Journal of Neurophysiology 58, no. 2 (August 1, 1987): 327–41. http://dx.doi.org/10.1152/jn.1987.58.2.327.
Full textBongiovanni, Ángel, Marina Ramón-Pérez, Ana María Pérez García, Miguel Cerviño, Jordi Cepa, Jakub Nadolny, Ricardo Pérez Martínez, et al. "The OTELO survey." Astronomy & Astrophysics 635 (March 2020): A35. http://dx.doi.org/10.1051/0004-6361/201833656.
Full textZischke, Mitchell T., Shane P. Griffiths, and Ian R. Tibbetts. "Rapid growth of wahoo (Acanthocybium solandri) in the Coral Sea, based on length-at-age estimates using annual and daily increments on sagittal otoliths." ICES Journal of Marine Science 70, no. 6 (May 22, 2013): 1128–39. http://dx.doi.org/10.1093/icesjms/fst039.
Full textPopa, Alexandru, Felix Bende, Roxana Șirli, Alina Popescu, Victor Bâldea, Raluca Lupușoru, Radu Cotrău, Renata Fofiu, Camelia Foncea, and Ioan Sporea. "Quantification of Liver Fibrosis, Steatosis, and Viscosity Using Multiparametric Ultrasound in Patients with Non-Alcoholic Liver Disease: A “Real-Life” Cohort Study." Diagnostics 11, no. 5 (April 26, 2021): 783. http://dx.doi.org/10.3390/diagnostics11050783.
Full textGriffiths, Shane P., Gary C. Fry, Fiona J. Manson, and Dong C. Lou. "Age and growth of longtail tuna (Thunnus tonggol) in tropical and temperate waters of the central Indo-Pacific." ICES Journal of Marine Science 67, no. 1 (August 30, 2009): 125–34. http://dx.doi.org/10.1093/icesjms/fsp223.
Full textGeorgieva-Tsaneva, Galya, Evgeniya Gospodinova, Mitko Gospodinov, and Krasimir Cheshmedzhiev. "Cardio-Diagnostic Assisting Computer System." Diagnostics 10, no. 5 (May 19, 2020): 322. http://dx.doi.org/10.3390/diagnostics10050322.
Full textFreixes, Marc, Marc Arnela, Joan Socoró, Francesc Alías, and Oriol Guasch. "Glottal Source Contribution to Higher Order Modes in the Finite Element Synthesis of Vowels." Applied Sciences 9, no. 21 (October 25, 2019): 4535. http://dx.doi.org/10.3390/app9214535.
Full textPletsch, Ariane Hidalgo Mansano, Alderico Rodrigues De Paula Júnior, Nelson José Freitas da Silveira, Walkiria Shimoaya-Bittencourt, and Rodrigo Aléxis Lazo Osório. "Análise dos Índices Espectrais da Variabilidade da Frequência Cardíaca Durante a Mudança Postural de Idosos Hipertensos." Journal of Health Sciences 20, no. 2 (July 27, 2018): 146. http://dx.doi.org/10.17921/2447-8938.2018v20n2p146-150.
Full textBerná-Serna, Juan D., Regina Sánchez-Jiménez, Francisca Velázquez-Marín, Pilar Sainz de Baranda, Florentina Guzmán-Aroca, Carmen Fernández-Hernández, Ernesto Doménech-Abellán, et al. "Acoustic radiation force impulse imaging for detection of liver fibrosis in overweight and obese children." Acta Radiologica 59, no. 2 (May 5, 2017): 247–53. http://dx.doi.org/10.1177/0284185117707359.
Full textPatzak, A., B. Schluter, W. Orlow, R. Mrowka, D. Gerhardt, E. Schubert, P. B. Persson, D. Barschdorff, and E. Trowitzsch. "Linear and nonlinear properties of heart rate control in infants at risk." American Journal of Physiology-Regulatory, Integrative and Comparative Physiology 273, no. 2 (August 1, 1997): R540—R547. http://dx.doi.org/10.1152/ajpregu.1997.273.2.r540.
Full textDissertations / Theses on the topic "LF S-parameter"
Subramani, Nandha kumar. "Physics-based TCAD device simulations and measurements of GaN HEMT technology for RF power amplifier applications." Thesis, Limoges, 2017. http://www.theses.fr/2017LIMO0084/document.
Full textGaN High Electron Mobility Transistors (HEMTs) have demonstrated their capabilities to be an excellent candidate for high power microwave and mm-wave applications. However, the presence of traps in the device structure significantly degrades the device performance and also detriments the device reliability. Moreover, the origin of these traps and their physical location remains unclear till today. A part of the research work carried out in this thesis is focused on characterizing the traps existing in the GaN/AlGaN/GaN HEMT devices using LF S-parameter measurements, LF noise measurements and drain-lag characterization. Furthermore, we have used TCAD-based physical device simulations in order to identify the physically confirm the location of traps in the device. Moreover, our experimental characterization and simulation study suggest that LF measurements could be an effective tool for characterizing the traps existing in the GaN buffer whereas gate-lag characterization could be more useful to characterize the AlGaN barrier traps of GaN HEMT devices. The second aspect of this research work is focused on characterizing the AlN/GaN/AlGaN HEMT devices grown on Si and SiC substrate. We attempt to characterize the temperature-dependent on-resistance (RON) extraction of these devices using on-wafer measurements and TCAD-based physical simulations. Furthermore, we have proposed a simplified methodology to extract the temperature and bias-dependent channel sheet resistance (Rsh) and parasitic series contact resistance (Rse) of AlN/GaN HEMT devices. Further, we have made a comprehensive evaluation of thermal behavior of these devices using on-wafer measurements and TCAD-based three-dimensional (3D) thermal simulations. The thermal resistance (RTH) has been extracted for various geometries of the device using measurements and validated using TCAD-thermal simulations
Bouslama, Mohamed. "Approche duale de modélisation TCAD et de caractérisations électriques approfondies pour la détermination de la signature et de la localisation des pièges dans les HEMT GaN sur substrat SiC." Thesis, Limoges, 2020. http://www.theses.fr/2020LIMO0076.
Full textGaN-based HEMTs have already demonstrated their supreme potential for all high power and high frequency applications. However, this technology suffers from limitations due to complex trapping/de-trapping mechanisms that occurs in the device and that are still not well understood. This trapping mechanism limits the RF performances but also undermines the device reliability. In this work, we have investigated the trapping mechanisms using different advanced measurements techniques (LF S-parameter measurements, I-DLTS, noise current spectral density) to identify the signature of traps.Thanks to SentaurusTCAD simulation, we have identified and understood the physical location of several traps in the device. This contribution would provide an efficient feedback for future technological improvements