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Relevant bibliographies by topics / Light emitting diodes. Gallium nitride. Laser ablation

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Academic literature on the topic 'Light emitting diodes. Gallium nitride. Laser ablation'

Author: Grafiati

Published: 4 June 2021

Last updated: 4 February 2022

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Journal articles on the topic "Light emitting diodes. Gallium nitride. Laser ablation"

1

Moser, Rüdiger, Michael Kunzer, Christian Goßler, et al. "Laser processing of gallium nitride–based light-emitting diodes with ultraviolet picosecond laser pulses." Optical Engineering 51, no. 11 (2012): 114301. http://dx.doi.org/10.1117/1.oe.51.11.114301.

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2

Chen, Shen Li, Shawn Chang, Chun Hsing Shih, and H. H. Chen. "ESD-Reliability Analysis and Strategy of the GaN-Based Light-Emitting Diodes." Key Engineering Materials 656-657 (July 2015): 57–62. http://dx.doi.org/10.4028/www.scientific.net/kem.656-657.57.

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Compounds such as GaN, ZnSe, and SiC are the compounds that currently hold the most potential in developing blue light-emitting diodes (LEDs) and blue laser diodes (LDs). Speaking of the physical property, the gallium nitride belongs to a direct bandgap material with an obviously super luminous efficiency; therefore, the gallium nitride has the dominate tendency than that of others materials. Although the gallium nitride has excellent physical properties, but in actually it is suffered many challenges during the manufacture process. Especially, it is extremely sensitive to the electrostatic di

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3

DenBaars, Steven P., Daniel Feezell, Katheryn Kelchner, et al. "Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays." Acta Materialia 61, no. 3 (2013): 945–51. http://dx.doi.org/10.1016/j.actamat.2012.10.042.

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4

Kim, Su Jin, Kyeong Heon Kim, Ho Young Chung, et al. "Enhanced Current Transport and Injection in Thin-Film Gallium-Nitride Light-Emitting Diodes by Laser-Based Doping." ACS Applied Materials & Interfaces 6, no. 19 (2014): 16601–9. http://dx.doi.org/10.1021/am5031165.

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5

Zolper, J. C., and R. J. Shul. "Implantation and Dry Etching of Group-III-Nitride Semiconductors." MRS Bulletin 22, no. 2 (1997): 36–43. http://dx.doi.org/10.1557/s0883769400032553.

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The recent advances in the material quality of the group-III-nitride semiconductors (GaN, A1N, and InN) have led to the demonstration of high-brightness light-emitting diodes, blue laser diodes, and high-frequency transistors, much of which is documented in this issue of MRS Bulletin. While further improvements in the material properties can be expected to enhance device operation, further device advances will also require improved processing technology. In this article, we review developments in two critical processing technologies for photonic and electronic devices: ion implantation and pla

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6

Kim, Sung-Un, and Yong-Ho Ra. "Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures." Nanomaterials 11, no. 1 (2020): 9. http://dx.doi.org/10.3390/nano11010009.

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One-dimensional nanowires based on Group III-nitride materials are emerging as one of the most promising structures for applications of light-emitting diodes (LEDs), laser diodes (LDs), solar cells, and photocatalysts. However, leading to the so-called “green gap” in photonics, the fabrication of high concentration indium gallium nitride (InGaN) and long-InGaN structures remains still challenging. In this study, we performed simulations for structural modeling of uniform temperature distribution in a nanowire epitaxy, and have successfully developed high-concentration InGaN and long-InGaN nano

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7

Tautz, Markus, Maren T. Kuchenbrod, Joachim Hertkorn, et al. "Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES." Beilstein Journal of Nanotechnology 11 (January 3, 2020): 41–50. http://dx.doi.org/10.3762/bjnano.11.4.

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Roughening by anisotropic etching of N-face gallium nitride is the key aspect in today’s production of blue and white light emitting diodes (LEDs). Both surface area and number of surface angles are increased, facilitating light outcoupling from the LED chip. The structure of a GaN layer stack grown by metal organic chemical vapour deposition (MOCVD) was varied in the unintentionally doped u-GaN bulk region. Different sequences of 2D and 3D grown layers led to a variation in dislocation density, which was monitored by photoluminescence microscopy (PLM) and X-ray diffraction (XRD). Thin-film pr

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8

Key, Daryl, Edward Letts, Chuan-Wei Tsou, et al. "Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production." Materials 12, no. 12 (2019): 1925. http://dx.doi.org/10.3390/ma12121925.

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Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2” GaN substrates through our proprietary Near Equilibrium AmmonoThermal (NEAT) growth technology. In a single 90 day growth, eleven c-plane GaN boules were grown from free-standing hydride vapor phase epitaxy (HVPE) GaN substrates. The boules had an average X-ray rocking curve full width at half maximum (FWHM) of 33 ± 4 in the 002 reflection and 44 ± 6 in the 201 reflection using 0.3 mm divergence slits. The

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9

Yao, H., C. H. Yan, H. A. Jenkinson, J. M. Zavada, J. S. Speck, and S. P. Denbaars. "Optical Dielectric Response of Gallium Nitride Studied by Variable Angle Spectroscopic Ellipsometry." MRS Proceedings 449 (1996). http://dx.doi.org/10.1557/proc-449-805.

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ABSTRACTVariable angle spectroscopic ellipsometry (VASE) and transmission measurements have been employed to study the dielectric response of gallium nitride (GaN) thin films — an important material for light emitting diodes (LEDs) and laser diodes applications. The GaN films were grown by atomsphere pressure metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates (α-AI2O3). Room temperature VASE measurements were made, in the range of 0.75 to 5.5eV, at the angle of incidence of 73, 75, and 77 degree, respectively. Evidence of anisotropy is observed especially in the spe

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10

Johnson, M. A. L., J. P. Long, and J. F. Schetzina. "New UV Light Emitter Based on AlGaN Heterostructures with Graded Electron and Hole Injectors." MRS Proceedings 743 (2002). http://dx.doi.org/10.1557/proc-743-l7.4.

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ABSTRACTNew ultraviolet (UV) light emitting device structures address the problems of small carrier concentrations and large band-offsets in wide bandgap Aluminum Gallium Nitride (AlGaN) heterostructures through the use of graded epilayers for electron and hole injection. For light emission at 280–290 nm, a multiple-quantum-well separate confinement heterostructure (MQWSCH) employs a graded AlGaN structure for the injection of majority carriers from the metal-semiconductor contact layers into the spacecharge region of the pn-junction with a higher bandgap energy. Sample LED mesa devices were f

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Dissertations / Theses on the topic "Light emitting diodes. Gallium nitride. Laser ablation"

1

Lochner, Zachary Meyer. "Green light emitting diodes and laser diodes grown by metalorganic chemical vapor deposition." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33827.

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This thesis describes the development of III-Nitride materials for light emitting applications. The goals of this research were to create and optimize a green light emitting diode (LED) and laser diode (LD). Metalorganic chemical vapor deposition (MOCVD) was the technique used to grow the epitaxial structures for these devices. The active regions of III-Nitride based LEDs are composed of InₓGa₁₋ₓN, the bandgap of which can be tuned to attain the desired wavelength depending on the percent composition of Indium. An issue with this design is that the optimal growth temperature of InGaN is lower

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2

Wang, Xianghua, and 王向华. "Design and laser fabrication of GaN/sapphire light-emitting diodes." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2010. http://hub.hku.hk/bib/B45143079.

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3

Mak, Yick-hong Giuseppe, and 麥易康. "Development of laser processes for nitride light-emitting diodes and its applications." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2010. http://hub.hku.hk/bib/B45879825.

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4

Chan, Christopher Chang Sing. "Dynamics of nanostructured light emitted diodes." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:8ca45bb5-7ebf-4f25-a06e-8ab14602382d.

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Experimental investigations of the optical properties of GaN nanostructured light emitting diode (LED) arrays are presented. Microphotoluminescence spectroscopy with pulsed and continuous wave lasers was used to probe the carrier dynamics and emission mechanisms of nanorod LED arrays fabricated by a top down etching method. Results show a possible reduction in internal electric field as nanorod diameter decreases. Localisation effects were also observed, affecting the spectral shape of the nanorod emission. Under two-photon excitation, quantum dot-like sharp spectral peaks in the PL spectra ar

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5

Lochner, Zachary M. "Heterojunction bipolar transistors and ultraviolet-light-emitting diodes based in the III-nitride material system grown by metalorganic chemical vapor deposition." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/49032.

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The material and device characteristics of InGaN/GaN heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapor deposition are examined. Two structures grown on sapphire with different p-InxGa1-xN base-region compositions, xIn = 0.03 and 0.05, are presented in a comparative study. In a second experiment, NpN-GaN/InGaN/GaN HBTs are grown and fabricated on free-standing GaN (FS-GaN) and sapphire substrates to investigate the effect of dislocations on III-nitride HBT epitaxial structures. The performance characteristics of HBTs on FS-GaN with a 20×20 m2 emitter area exhibit

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Books on the topic "Light emitting diodes. Gallium nitride. Laser ablation"

1

Nakamura, Shuji. The blue laser diode: GaN based light emitters and lasers. Springer, 1997.

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2

A, Yoshikawa, and International Symposium on Blue Laser and Light Emitting Diodes (1996 : Chiba Daigaku), eds. Blue laser and light emitting diodes. Ohmsha, 1996.

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3

Blue Laser and Light Emitting Diodes. Ios Pr Inc, 1996.

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4

Pearton, Stephen J., Gerhard Fasol, and Shuji Nakamura. The Blue Laser Diode: The Complete Story. 2nd ed. Springer, 2000.

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Book chapters on the topic "Light emitting diodes. Gallium nitride. Laser ablation"

1

Nam, Kwun, and Kwan San. "Laser Micromachining for Gallium Nitride Based Light-Emitting Diodes." In Advances in Micro/Nano Electromechanical Systems and Fabrication Technologies. InTech, 2013. http://dx.doi.org/10.5772/55468.

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