Relevant bibliographies by topics / Light emitting diodes (LEDs)

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Light emitting diodes (LEDs)'

Author: Grafiati
Published: 4 June 2021
Last updated: 4 March 2023

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Journal articles on the topic "Light emitting diodes (LEDs)"

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Sreedhar, K. V. S. "Light Emitting Diodes (LEDs)." IOSR Journal of Electronics and Communication Engineering 9, no. 2 (2014): 07–13. http://dx.doi.org/10.9790/2834-09270713.

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Janicki, Marcin, Tomasz Torzewicz, Przemysław Ptak, Tomasz Raszkowski, Agnieszka Samson, and Krzysztof Górecki. "Parametric Compact Thermal Models of Power LEDs." Energies 12, no. 9 (May 7, 2019): 1724. http://dx.doi.org/10.3390/en12091724.

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Light-emitting diodes are nowadays the most dynamically developing type of light sources. Considering that temperature is the main factor affecting the electrical and lighting parameters of these devices, thermal models are essential subcomponents of the multidomain models commonly used for simulation of their operation. The authors investigated white power light-emitting diodes soldered to Metal Core Printed Circuit Boards (MCPCBs). The tested devices were placed in a light-tight box on a cold plate and their cooling curves were registered for different diode heating current values and various preset cold plate temperatures. These data allowed the computation of optical and real heating power values and consequently the generation of compact thermal models in the form of Foster and Cauer RC ladders. This also rendered possible the analysis of the influence of the considered factors on the compact model element values and their parametrization. The resulting models yield accurate values of diode junction temperature in most realistic operating conditions and they can be easily included in multidomain compact models of power light emitting diodes.
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Xiao, Peng, Junhua Huang, Dong Yan, Dongxiang Luo, Jian Yuan, Baiquan Liu, and Dong Liang. "Emergence of Nanoplatelet Light-Emitting Diodes." Materials 11, no. 8 (August 8, 2018): 1376. http://dx.doi.org/10.3390/ma11081376.

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Since 2014, nanoplatelet light-emitting diodes (NPL-LEDs) have been emerged as a new kind of LEDs. At first, NPL-LEDs are mainly realized by CdSe based NPLs. Since 2016, hybrid organic-inorganic perovskite NPLs are found to be effective to develop NPL-LEDs. In 2017, all-inorganic perovskite NPLs are also demonstrated for NPL-LEDs. Therefore, the development of NPL-LEDs is flourishing. In this review, the fundamental concepts of NPL-LEDs are first introduced, then the main approaches to realize NPL-LEDs are summarized and the recent progress of representative NPL-LEDs is highlighted, finally the challenges and opportunities for NPL-LEDs are presented.
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Nichols, M. "LEDs (light emitting diodes) in horticulture." Acta Horticulturae, no. 1176 (October 2017): 23–24. http://dx.doi.org/10.17660/actahortic.2017.1176.4.

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Barolet, Daniel. "Light-Emitting Diodes (LEDs) in Dermatology." Seminars in Cutaneous Medicine and Surgery 27, no. 4 (December 2008): 227–38. http://dx.doi.org/10.1016/j.sder.2008.08.003.

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Bourget, C. Michael. "An Introduction to Light-emitting Diodes." HortScience 43, no. 7 (December 2008): 1944–46. http://dx.doi.org/10.21273/hortsci.43.7.1944.

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Light-emitting diodes (LEDs) are semiconductor devices that produce noncoherent, narrow-spectrum light when forward voltage is applied. LEDs range in wavelength from the UVC band to infrared (IR) and are available in packages ranging from milliwatts to more than 10 W. The first LED was an IR-emitting device and was patented in 1961. In 1962, the first practical visible spectrum LED was developed. The first high-power (1-W) LEDs were developed in the late 1990s. LEDs create light through a semiconductor process rather than with a superheated element, ionized gas, or an arc discharge as in traditional light sources. The wavelength of the light emitted is determined by the materials used to form the semiconductor junction. LEDs produce more light per electrical watt than incandescent lamps with the latest devices rivaling fluorescent tubes in energy efficiency. They are solid-state devices, which are much more robust than any glass-envelope lamp and contain no hazardous materials like fluorescent lamps. LEDs also have a much longer lifetime than incandescent, fluorescent, and high-density discharge lamps (U.S. Dept. of Energy). Although LEDs possess many advantages over traditional light sources, a total system approach must be considered when designing an LED-based lighting system. LEDs do not radiate heat directly, but do produce heat that must be removed to ensure maximum performance and lifetime. LEDs require a constant-current DC power source rather than a standard AC line voltage. Finally, because LEDs are directional light sources, external optics may be necessary to produce the desired light distribution. A properly designed LED light system is capable of providing performance and a lifetime well beyond any traditional lighting source.
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Ma, Su, Yawei Qi, Ge Mu, Menglu Chen, and Xin Tang. "Multi-Color Light-Emitting Diodes." Coatings 13, no. 1 (January 13, 2023): 182. http://dx.doi.org/10.3390/coatings13010182.

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Multi-color light-emitting diodes (LEDs) with various advantages of color tunability, self-luminescence, wide viewing angles, high color contrast, low power consumption, and flexibility provide a wide range of applications including full-color display, augmented reality/virtual reality technology, and wearable healthcare systems. In this review, we introduce three main types of multi-color LEDs: the organic LED, colloidal quantum dots (CQDs) LED, and CQD–organic hybrid LED. Various strategies for realizing multi-color LEDs are discussed including red, green, and blue sub-pixel side-by-side arrangement; vertically stacked LED unit configuration; and stacked emitter layers in a single LED. Finally, according to their status and challenges, we present an outlook of multi-color devices. We hope this review can inspire researchers and make a contribution to the further improvement of multi-color LED technology.
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Nakamura, Shuji. "Blue-Green Light-Emitting Diodes and Violet Laser Diodes." MRS Bulletin 22, no. 2 (February 1997): 29–35. http://dx.doi.org/10.1557/s088376940003253x.

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Short-wavelength-emitting devices, such as blue laser diodes (LDs) and light-emitting diodes (LEDs), are currently sought for a number of applications, including full-color electroluminescent displays, laser printers, read-write laser sources for high-density information storage on magnetic and optical media, and sources for undersea optical communications. For these purposes, II–VI materials such as ZnSe and SiC, and III–V-nitride semiconductors such as GaN have been investigated intensively for a long time. However it was impossible to obtain high-brightness (over 1 cd) blue LEDs and reliable LDs. Much progress has been achieved recently on green LEDs and LDs using II–VI-based materials. The short lifetimes prevent II–VI-based devices from commercialization at present. The short lifetime of these II-VI-based devices may be caused by the crystal defects at a density of 103/cm2 because one crystal defect would cause the propagation of other defects leading to failure of the devices. Another wide-bandgap material for blue LEDs is SiC. The brightness of SiC blue LEDs is only between 10 mcd and 20 mcd because of the indirect bandgap of this material.On green LEDs, the external quantum efficiency of conventional, green GaP LEDs is only 0.1% due to the indirect bandgap of this material. The peak wavelength is 555 nm (yellowish green). As another material for green emission devices, AlInGaP has been used. The present performance of green AlInGaP LEDs is an emission wavelength of 570 nm (yellowish green) and maximum external quantum efficiency of 1%.
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Wang, Ming-Sheng, and Guo-Cong Guo. "Inorganic–organic hybrid white light phosphors." Chemical Communications 52, no. 90 (2016): 13194–204. http://dx.doi.org/10.1039/c6cc03184f.

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COLE, RICHARD W. "LIGHT EMITTING DIODES IN BIO-IMAGING." International Journal of High Speed Electronics and Systems 20, no. 02 (June 2011): 303–19. http://dx.doi.org/10.1142/s0129156411006611.

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Light-emitting diodes (LEDs) can and are currently integrated into light microscopes. They have numerous advantages as illumination sources. Most notably, they provide intensity (brightness) and spectral control during bio-imaging. For transmitted light imaging, LEDs can replace the traditional tungsten filament bulb, while offering longer life, little-to-no color temperature shift resulting from an intensity change, reduced emission in the infrared region, (a property important for live cell imaging), and reduced cost of ownership. For fluorescent imaging, in which the typical illumination sources are mercury or xenon lamps, LEDs offer the advantages of a longer lifespan, greater spatial and temporal stability, elimination of the need for mechanical shutters and neutral density filters, significantly lower cost of ownership, and reduction of photon dose at the specimen. Additionally, LEDs permit vibration-free, high-speed spectral and temporal modulation. This modulation allows more information to be obtained for a given photon dose.
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Dissertations / Theses on the topic "Light emitting diodes (LEDs)"

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Habtemichael, Yishak Tekleab. "Packaging designs for ultraviolet light emitting diodes." Thesis, Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/45764.

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Aluminum Gallium Nitride (AlGaN) / Gallium Nitride (GaN) based deep ultraviolet (DUV) light emitting didoes (LEDs) with emission wavelengths between 200-280 nm enable key emerging technologies such as water/air purification and sterilization, covert communications and portable bio-agent detection/identification systems for homeland security, and surface and medical device sterilization. These devices produce a large amount of undesired heat due to low quantum efficiencies in converting electrical input to optical output. These low efficiencies are attributed to difficulties in the growth&doping of AlₓGa₁₋ₓN materials and UV absorbing substrates leading to excessive joule heating, which leads to device degradation and a spectral shift in the emission wavelength. With this regard, effective thermal management in these devices depends on the removal of this heat and reduction of the junction temperature. This is achieved by decreasing the package thermal resistance from junction-to-air with cost-effective solutions. The use of heat sinks, thermal interface materials, and high conductivity heat spreaders is instrumental in the reduction of the overall junction-to-air thermal resistance. This thesis work focuses on thermal modeling of flip-chip packaged deep UV LEDs to gain a better understanding of the heat propagation through these devices as well as the package parameters that have the biggest contributions to reducing the overall thermal resistance. A parametric study focusing on components of a lead frame package is presented to ascertain the thermal impacts of various package layers including contact metallizations, thermal spreading sub-mounts, and thermal interface materials. In addition the use of alternative thermal interface materials such as phase change materials and liquid metals is investigated experimentally.
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Cheung, Yuk-fai, and 張煜輝. "Phosphor-free multilayered LEDs and thin film LEDs." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2013. http://hub.hku.hk/bib/B50900067.

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The irreversible trend of replacing the conventional incandescence light bulbs and fluorescent tubes with white light emitting diodes (LEDs) aims to use less energy for lighting. Plenty of the commercially available white LEDs are made from blue LED chips with few-micron-thick gallium nitride (GaN) grown on several hundred micron thick transparent sapphire substrates, followed by coating of yellow phosphor powder on top of the chips for converting the emitted blue light to white light. Not only does such approach give the white LEDs a high colour temperature, but also introduces conversion loss from the phosphor powder. The former issue makes users feel unpleasant for living while the latter wastes energy. Therefore, a new version of phosphor-free multilayered vertically-stacked colour-tunable LED structure is proposed in this thesis such that it allows users to regulate the colour temperature of light source according to their preference. Simultaneously, the device replaces light conversion agents with direct light generation. The fabrication of the proposed device involved the use of backside laser micromachining of trenches on the substrates of the upper layers of basic colour LED chips at a size just enough to fit the wire-bonded wire of lower layer LED chips inside. With equal-sized basic colour LED chips tightly packed together, colour homogeneity of the proposed device is enhanced and thus provides the proposed device the capability to substitute the conventional RGB LED devices with basic colour LED chips separately aligned. To improve the internal quantum efficiency and light extraction of nitride-based LEDs, thin film photonic crystal LED is proposed. Light and heat trapping sapphire substrate is removed by laser lift-off (LLO), forming GaN thin film on an electrically conductive opaque substrate with better heat conductivity than sapphire. By proper etching, N-dopped GaN layer can be exposed, resulting in the formation of vertical LED. Compared with conventional lateral LEDs with sapphire substrate, carrier path of vertical LED is greatly reduced and hence achieving lower internal resistance. To further boost light extraction, the device top surface is patterned with nanopillars by nanosphere lithography. A monolayer of closely-packed silica nanospheres is patterned on the N-GaN surface by spin coating. It acts as a mask for etching the nanopillars which bandfold lights from diffracted modes to radiative modes located above the light line for extraction. A typical laser LLO process results in thin films with undopped gallium nitride (U-GaN) surface or N-GaN (after etching) faces up. If P-side up is necessary, the GaN layers are first required to attach to a temporary substrate for LLO and then the LLO exposed surface is adhered to the real substrate before temporary substrate is detached. This method is proposed to relieve the issue of light channeling inside the sapphire substrate of full colour LED micro-display panel fabricated on a single GaN on Sapphire wafer. With the elimination of sapphire, “parasitic” blue emissions from the area surrounding pixels are reduced which in turns improved the observable effects from the microspheres jet-printed on the top surface of the panel.
published_or_final_version
Electrical and Electronic Engineering
Master
Master of Philosophy
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Bergenek, Krister. "Thin-film photonic crystal LEDs with enhanced directionality." Thesis, St Andrews, 2009. http://hdl.handle.net/10023/912.

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Liang, Hu. "Fabrication and characteristics of the InGaN/GaN multiple quantum well blue LEDs /." View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20LIANG.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003.
Includes bibliographical references (leaves 62-66). Also available in electronic version. Access restricted to campus users.
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Snyman, LW, H. Aharoni, and Plessis M. du. "A dependency of quantum efficiency of silicon CMOS n+pp+ LEDs on current density." IEEE Photonics Technology Letters, 2005. http://encore.tut.ac.za/iii/cpro/DigitalItemViewPage.external?sp=1001057.

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Abstract—A dependency of quantum efficiency of nn+pp+ silicon complementary metal–oxide–semiconductor integrated lightemitting devices on the current density through the active device areas is demonstrated. It was observed that an increase in current density from 1 6 10+2 to 2 2 10+4 A cm 2 through the active regions of silicon n+pp+ light-emitting diodes results in an increase in the external quantum efficiency from 1 6 10 7 to 5 8 10 6 (approximately two orders of magnitude). The light intensity correspondingly increase from 10 6 to 10 1 W cm 2 mA (approximately five orders of magnitude). In our study, the highest efficiency device operate in the p-n junction reverse bias avalanche mode and utilize current density increase by means of vertical and lateral electrical field confinement at a wedge-shaped n+ tip placed in a region of lower doping density and opposite highly conductive p+ regions.
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Qin, Yaxiao. "High Efficiency SEPIC Converter For High Brightness Light Emitting Diodes (LEDs) System." Thesis, Virginia Tech, 2012. http://hdl.handle.net/10919/44422.

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This thesis presents an investigation into the characteristics of and driving methods for light emitting diode (LED) lamp system. A comprehensive overview on the lighting development is proposed. The characteristic of the light emitting diode (LED) lamp is described and the requirements of the ballast for the light emitting diode (LED) lamp are presented. Although LED lamps have longer lifetime than fluorescent lamps, the short lifetime limitation of LED driver imposed by electrolytic capacitor has to be resolved. Therefore, an LED driver without electrolytic capacitor in the whole power conversion process is preferred. In this thesis, a single phase, power factor correction converter without electrolytic capacitors for LED lighting applications is proposed, which is a modified SEPIC converter working in discontinuous conduction mode (DCM). Different with a conventional SEPIC converter, the middle capacitor is replaced with a valley-fill circuit. The valley-fill circuit could reduce the voltage stress of output diode and middle capacitor under the same power factor condition, thus achieving higher efficiency. Instead of using an electrolytic capacitor for the filter, a polyester capacitor of better lifetime expectancy is used. An interleaved power factor correction SEPIC with valley fill circuit is proposed to further increase the efficiency and to reduce the input and output filter size and cost. The interleaved converter shows the features such as ripple cancellation, good thermal distribution and scalability.
Master of Science
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Stone, Roni. "An investigation into novel red emitting phosphors and their applications." Thesis, Brunel University, 2011. http://bura.brunel.ac.uk/handle/2438/6296.

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New red emitting phosphors, based on the double tungstate/molybdates, were discovered. Some were able to retain their luminous efficacy after substituting Y3+ for Eu3+, reducing the cost of the phosphor. This substitution was attempted for existing commercial red emitting phosphors and proved unsuccessful. Another set of phosphors based on these lattices were discovered and the emitted luminous efficacy was 140% greater than other reported Eu3+ phosphors. The best of these was Na2WO4MoO4Eu0.44Al1.34Sm0.011. The integration of phosphors to the lighting application was also studied, including improvements in light extraction for existing phosphors. ACEL panels are currently applied to many applications and were briefly examined. The more recent OLED technology was investigated and comparisons can be drawn with the ACEL panels. LEDs were also a focus of the work with a new method developed for remote application of phosphors to LEDs, based on a dome shaped encapsulant, and this was adopted commercially by a high brightness LED manufacturer. The studies on the phosphors reported herein were aimed at integrating these into commercial applications. Although this was not achieved as brightness and particles size were problematic, if it is demonstrated that further development of the synthetic methods produce phosphors with suitable attributes, this may lead to the integration in applications.
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Pinos, Andrea. "Optical properties and degradation of deep ultraviolet AIGaN-based light-emitting diodes." Doctoral thesis, KTH, Fotonik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-37917.

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Bano, Nargis. "Fabrication and Characterization of ZnO Nanorods Based Intrinsic White Light Emitting Diodes (LEDs)." Doctoral thesis, Linköpings universitet, Fysik och elektroteknik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-71829.

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ZnO material based hetero-junctions are a potential candidate for the design andrealization of intrinsic white light emitting devices (WLEDs) due to several advantages overthe nitride based material system. During the last few years the lack of a reliable andreproducible p-type doping in ZnO material with sufficiently high conductivity and carrierconcentration has initiated an alternative approach to grow n-ZnO nanorods (NRs) on other ptypeinorganic and organic substrates. This thesis deals with ZnO NRs-hetero-junctions basedintrinsic WLEDs grown on p-SiC, n-SiC and p-type polymers. The NRs were grown by thelow temperature aqueous chemical growth (ACG) and the high temperature vapor liquid solid(VLS) method. The structural, electrical and optical properties of these WLEDs wereinvestigated and analyzed by means of scanning electron microscope (SEM), current voltage(I-V), photoluminescence (PL), cathodoluminescence (CL), electroluminescence (EL) anddeep level transient spectroscopy (DLTS). Room temperature (RT) PL spectra of ZnOtypically exhibit one sharp UV peak and possibly one or two broad deep level emissions(DLE) due to deep level defects in the bandgap. For obtaining detailed information about thephysical origin, growth dependence of optically active defects and their spatial distribution,especially to study the re-absorption of the UV in hetero-junction WLEDs structure depthresolved CL spectroscopy, is performed. At room temperature the CL intensity of the DLEband is increased with the increase of the electron beam penetration depth due to the increaseof the defect concentration at the ZnO NRs/substrate interface. The intensity ratio of the DLEto the UV emission, which is very useful in exploring the origin of the deep level emissionand the distribution of the recombination centers, is monitored. It was found that the deepcenters are distributed exponentially along the ZnO NRs and that there are more deep defectsat the root of ZnO NRs compared to the upper part. The RT-EL spectra of WLEDs illustrateemission band covering the whole visible range from 420 nm and up to 800 nm. The whitelightcomponents are distinguished using a Gaussian function and the components were foundto be violet, blue, green, orange and red emission lines. The origin of these emission lines wasfurther identified. Color coordinates measurement of the WLEDs reveals that the emitted lighthas a white impression. The color rendering index (CRI) and the correlated color temperature(CCT) of the fabricated WLEDs were calculated to be 80-92 and 3300-4200 K, respectively.
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Potfajova, Jaroslava. "Silicon based microcavity enhanced light emitting diodes." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-25451.

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Realising Si-based electrically driven light emitters in a process technology compatible with mainstream microelectronics CMOS technology is key requirement for the implementation of low-cost Si-based optoelectronics and thus one of the big challenges of semiconductor technology. This work has focused on the development of microcavity enhanced silicon LEDs (MCLEDs), including their design, fabrication, and experimental as well as theoretical analysis. As a light emitting layer the abrupt pn-junction of a Si diode was used, which was fabricated by ion implantation of boron into n-type silicon. Such forward biased pn-junctions exhibit room-temperature EL at a wavelength of 1138 nm with a reasonably high power efficiency of 0.1%. Two MCLEDs emitting light at the resonant wavelength about 1150 nm were demonstrated: a) 1-lambda MCLED with the resonator formed by 90 nm thin metallic CoSi2 mirror at the bottom and semitransparent distributed Bragg reflector (DBR) on the top; b) 5.5-lambda MCLED with the resonator formed by high reflecting DBR at the bottom and semitransparent top DBR. Using the appoach of the 5.5-lambda MCLED with two DBRs the extraction efficiency is enhanced by about 65% compared to the silicon bulk pn-junction diode.
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Books on the topic "Light emitting diodes (LEDs)"

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Steiger, Sebastian. Modelling Nano-LEDs. Konstanz: Hartung-Gorre, 2009.

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Chang-Hee, Hong, Hanʾguk Kwanghakhoe, Zhongguo guang xue xue hui., and Society of Photo-optical Instrumentation Engineers., eds. Advanced LEDs for solid state lighting: 5-7 September 2006, Gwangju, South Korea. Bellingham, Wash: SPIE, 2006.

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Huang, Jian-Jang, Hao-Chung Kuo, and Shyh-Chiang Shen. Nitride semiconductor light-emitting diodes (LEDs): Materials, technologies and applications. Oxford: Woodhead Publishing, 2014.

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Fukuda, Mitsuo. Reliability and degradation of semiconductor lasers and LEDs. Boston: Artech House, 1991.

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P, Pearsall T., SPIE (Society), European Photonics Industry Consortium, SPIE Europe, and Technische Universität Berlin, eds. Manufacturing LEDs for lighting and displays: 10-11 September 2007, Berlin, Germany. Bellingham, Wash: SPIE, 2007.

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Conway, Kathryn M. Light emitting diodes (LEDs) in lighting and display applications, 2003-2015. Portland, ME: Intertech, 2003.

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Embedded LEDs in signs. Washington, D.C.]: U.S. Dept. of Transportation, Federal Highway Administration, 2009.

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Deppner, Marcus. Design of nanorod-LEDs using computational modelling. Konstanz: Hartung-Gorre Verlag, 2013.

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Lenk, Ron. Practical lighting design with LEDs. Piscataway, NJ: IEEE Press, 2011.

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R, Brozel M., and Chemistry, eds. Characterization of algainp light emitting diodes (leds) grown by metal organic chemical vapour deposition (mocvd). Manchester: UMIST, 1998.

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Book chapters on the topic "Light emitting diodes (LEDs)"

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Jiang, Fengyi, Jianli Zhang, Qian Sun, and Zhijue Quan. "GaN LEDs on Si Substrate." In Light-Emitting Diodes, 133–70. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_4.

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Chandrasekhar, Prasanna. "Light Emitting Diodes (LEDs)." In Conducting Polymers, Fundamentals and Applications, 453–82. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-5245-1_16.

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Winnacker, Albrecht. "Light Emitting Diodes (LEDs)." In The Physics Behind Semiconductor Technology, 159–78. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-10314-8_11.

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Streubel, Klaus. "Light-emitting diodes (LEDs)." In Handbook of Optoelectronics, 305–48. Second edition. | Boca Raton : Taylor & Francis, CRC Press,: CRC Press, 2017. http://dx.doi.org/10.1201/9781315157009-10.

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Samuolienė, Giedrė, Aušra Brazaitytė, and Viktorija Vaštakaitė. "Light-Emitting Diodes (LEDs) for Improved Nutritional Quality." In Light Emitting Diodes for Agriculture, 149–90. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-5807-3_8.

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Zhou, Shengjun, and Sheng Liu. "Physics of III-Nitride Light-Emitting Diodes." In III-Nitride LEDs, 1–11. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0436-3_1.

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Jou, Jwo-Huei, Meenu Singh, and Yi-Fang Tsai. "Natural Light-Style Organic Light-Emitting Diodes." In Handbook of Solid-State Lighting and LEDs, 481–515. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] | Series: Series in optics and optoelectronics ; 25: CRC Press, 2017. http://dx.doi.org/10.1201/9781315151595-23.

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Wang, Guohong, Xiaoyan Yi, Teng Zhan, and Yang Huang. "The AlGaInP/AlGaAs Material System and Red/Yellow LED." In Light-Emitting Diodes, 171–202. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_5.

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Su, Chia-Ying, Chun-Han Lin, Yang Kuo, Yu-Feng Yao, Hao-Tsung Chen, Charng-Gan Tu, Chieh Hsieh, Horng-Shyang Chen, Yean-Woei Kiang, and C. C. Yang. "Surface Plasmon–Coupled Light-Emitting Diodes." In Handbook of Solid-State Lighting and LEDs, 141–60. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] | Series: Series in optics and optoelectronics ; 25: CRC Press, 2017. http://dx.doi.org/10.1201/9781315151595-9.

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Hanus-Fajerska, E., and R. Wojciechowska. "Impact of Light-Emitting Diodes (LEDs) on Propagation of Orchids in Tissue Culture." In Light Emitting Diodes for Agriculture, 305–20. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-5807-3_13.

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Conference papers on the topic "Light emitting diodes (LEDs)"

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Muszalski, Jan, Maciej Bugajski, T. J. Ochalski, Bohdan Mroziewicz, Hanna Wrzesinska, Marianna Gorska, and J. Katcki. "InGaAs resonant-cavity light-emitting diodes (RC LEDs)." In SPIE Proceedings, edited by Wieslaw L. Wolinski, Zdzislaw Jankiewicz, and Ryszard S. Romaniuk. SPIE, 2003. http://dx.doi.org/10.1117/12.531927.

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Meretska, Maryna L., Ad Lagendijk, Henri Thyrrestrup, Allard Mosk, Wilbert L. IJzerman, and Willem L. Vos. "Diffusion of light in white LEDs (Conference Presentation)." In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, edited by Li-Wei Tu, Martin Strassburg, Jong Kyu Kim, and Michael R. Krames. SPIE, 2018. http://dx.doi.org/10.1117/12.2289161.

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Thies, Andreas, Frank Schnieder, Indira Kaepplinger, Dominik Karolewski, Geert Brockmann, Thomas Ortlepp, Olaf Brodersen, et al. "Thermocompression bonding for high-power-UV LEDs." In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, edited by Li-Wei Tu, Martin Strassburg, Jong Kyu Kim, and Michael R. Krames. SPIE, 2018. http://dx.doi.org/10.1117/12.2287720.

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Kéna-Cohen, Stéphane. "Near and Mid-Infrared Light-Emitting Diodes Based on Solution-Processable Semiconductors." In Optical Devices and Materials for Solar Energy and Solid-state Lighting. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/pvled.2022.pvtu1h.1.

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We will discuss recent work aimed at developing efficient infrared light-emitting diodes (LEDs) based on organic semiconductors and black phosphorus (BP). We have realized a fluorescent organic light-emitting diode emitting at λ = 840 nm, with a maximum EQE of 3.8%, which is a record for this class of devices. We have also realized the first BP LED, which emits at λ = 3.7 µm, with an IQE of 1%.
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Guan, Y., L. Calhoun, R. M. Park, and P. S. Zory. "Characteristics of ZnSe Light Emitting Diodes as a Function of Temperature." In Compact Blue-Green Lasers. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/cbgl.1992.the3.

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Blue light emitting devices are of special value in optical recording, information processing, display and undersea applications. Recently, ZnSe has been shown to be a promising material for making such devices with reports of pulsed ZnSe based diode lasers at low temperature [1] and light emitting diodes (LEDs) at room temperature (RT) [2][3]. However, efficient and reliable operation of these device types at RT has yet to be demonstrated. In this work, we study the temperature dependence of the output spectral features and current-voltage (I-V) relations of ZnSe LEDs. The results may prove useful for developing efficient/reliable blue LEDs and lasers.
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Desières, Yohan, Ding Yuan Chen, Dennis Visser, Srinivasan Anand, Casper Schippers, David Vaufrey, Patrick Demars, François Levy, Christophe Largeron, and Quentin Lalauze. "Nanoparticle-based microstructures for light extraction enhancement in nitride-based LEDs." In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, edited by Li-Wei Tu, Martin Strassburg, Jong Kyu Kim, and Michael R. Krames. SPIE, 2018. http://dx.doi.org/10.1117/12.2290001.

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Saifaddin, Burhan, Abdullah Almogbel, Michael Iza, Abdulrahman Albadri, Ahmed Al Yamani, Shuji Nakamura, Christian J. Zollner, et al. "Developments in AlGaN and UV-C LEDs grown on SiC." In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, edited by Li-Wei Tu, Martin Strassburg, Jong Kyu Kim, and Michael R. Krames. SPIE, 2018. http://dx.doi.org/10.1117/12.2317660.

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Matias, Vladimir, Christopher J. Sheehan, Daniel D. Koleske, Brendan P. Gunning, Ashwin K. Rishinaramangalam, and Daniel Feezell. "Fabrication of InGaN LEDs on flexible metal foils (Conference Presentation)." In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, edited by Li-Wei Tu, Martin Strassburg, Jong Kyu Kim, and Michael R. Krames. SPIE, 2018. http://dx.doi.org/10.1117/12.2294597.

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Yuqin Zong, C., and Cameron Miller. "ACCURATE MEASUREMENT OF ULTRAVIOLET LIGHT-EMITTING DIODES." In CIE 2021 Conference. International Commission on Illumination, CIE, 2021. http://dx.doi.org/10.25039/x48.2021.op43.

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We have developed a new calibration capability for 200 nm to 400 nm ultraviolet light-emitting diodes (UV LEDs) using a Type D gonio-spectroradiometer. The recently-introduced mean differential continuous pulse (M-DCP) method is used to overcome the measurement difficulty associated with the initial forward voltage, VF, anomaly of a UV LED, which makes it impossible to use VF to infer junction temperature, TJ, during pulsed operation. The new measurement facility was validated indirectly by comparing the measured total luminous flux of a white LED with that measured using the NIST’s 2.5 m absolute integrating sphere. The expanded calibration uncertainty for the total radiant flux is approximately 2 % to 3 % (k = 2) depending the wavelength of the UV LED.
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Nathan, Sheryl, Noel Shammas, and Steve Grainger. "The future of high-power conventional semiconductor based Light Emitting Diodes (LEDS) against Organic Light Emitting Diodes (OLEDS)." In 2007 42nd International Universities Power Engineering Conference. IEEE, 2007. http://dx.doi.org/10.1109/upec.2007.4469033.

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Reports on the topic "Light emitting diodes (LEDs)"

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Smilgys, Russell V., Neri Shatz, and John Bortz. Novel Coatings for Enhancement of Light-Emitting Diodes (LEDs). Fort Belvoir, VA: Defense Technical Information Center, October 2006. http://dx.doi.org/10.21236/ada458518.

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Werner Goetz, Bill Imler, James Kim, Junko Kobayashi, Andrew Kim, Mike Krames, Rick Mann, Gerd Mueller-Mach, Anneli Munkholm, and Jonathan Wierer. Development of Key Technologies for White Lighting Based on Light-Emitting Diodes (LEDs). Office of Scientific and Technical Information (OSTI), March 2004. http://dx.doi.org/10.2172/921943.

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Speck, James. Identification and Mitigation of Droop Mechanism in Gallium Nitride (GaN)-Based Light Emitting Diodes (LEDs) (Final Report). Office of Scientific and Technical Information (OSTI), September 2018. http://dx.doi.org/10.2172/1514275.

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Choquette, Kent D., Jr Raftery, and James J. Photonic Crystal Light Emitting Diodes. Fort Belvoir, VA: Defense Technical Information Center, January 2006. http://dx.doi.org/10.21236/ada459348.

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Ton, M. K., E. E. Richman, and T. L. Gilbride. Demonstration Assessment of Light-Emitting Diode (LED) Residential Downlights and Undercabinet Lights. Office of Scientific and Technical Information (OSTI), October 2008. http://dx.doi.org/10.2172/1218245.

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Miller, N. Demonstration of Light-Emitting Diode (LED) Retrofit Lamps. Office of Scientific and Technical Information (OSTI), September 2011. http://dx.doi.org/10.2172/1220107.

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Kinzey, B. R., and M. A. Myer. Demonstration Assessment of Light-Emitting Diode (LED) Roadway Lighting. Office of Scientific and Technical Information (OSTI), November 2009. http://dx.doi.org/10.2172/1218419.

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Miller, N., and K. Curry. Demonstration Assessment of Light-Emitting Diode (LED) Retrofit Lamps. Office of Scientific and Technical Information (OSTI), November 2010. http://dx.doi.org/10.2172/1219091.

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Muelder, S. A. Light Emitting Diode (LED) fiducial system: Setup and operation. Office of Scientific and Technical Information (OSTI), January 1995. http://dx.doi.org/10.2172/74098.

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Singh, Deepika, and Steve Pearton. Deep Ultra-Violet (DUV) Light Emitting Diodes. Fort Belvoir, VA: Defense Technical Information Center, August 2003. http://dx.doi.org/10.21236/ada417107.

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