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Journal articles on the topic 'Lightly and heavily doped substrate'

Author: Grafiati

Published: 4 June 2025

Last updated: 6 July 2025

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1

Sanjay, Sharma, Yadav R.P., and Janyani Vijay. "Substrate Current Evaluation for Lightly and Heavily Doped MOSFETs at 45 nm process Using Physical Models." Bulletin of Electrical Engineering and Informatics 5, no. 1 (2016): 120–25. https://doi.org/10.11591/eei.v5i1.556.

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Substrate noise is a major integration issue in mixed signal circuits; particularly at radio frequency (RF) it becomes a key issue. In deep sub micron MOSFETs hot carrier effect induces device degradation. The impact ionization phenomenon is one of the main hot carrier effects. The paper covers the process and device level simulation of MOSFETs by TCAD and the substrate current comparison in lightly and heavily doped MOS. PMOS and NMOS devices are virtually fabricated with the help of ATHENA process simulator. The modeled devices include the hot carrier effects. The MOS devices are implemented on lightly and heavily doped substrates and substrate current is evaluated and compared with the help of ATLAS device simulator. Substrate current is better in lightly doped substrate than in heavily doped one. Drain current is also better in lightly doped than heavily doped substrates. Silvaco TCAD Tool is used for Virtual fabrication and simulation. ATHENA process simulator is used for virtual fabrication and ATLAS device simulator is used for device characterization.

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2

Sasaki, Sho, Jun Suda, and Tsunenobu Kimoto. "Doping-Induced Lattice Mismatch and Misorientation in 4H-SiC Crystals." Materials Science Forum 717-720 (May 2012): 481–84. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.481.

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Thec- anda-lattice constants of nitrogen-doped 4H-SiC were measured in the wide temperature range (RT - 1100°C). The samples used in this study were heavily doped substrates and lightly-doped free-standing epilayers. The lattice constants at room temperature are almost identical for all the samples. However, the lattice contraction by heavy nitrogen doping was clearly observed at high temperatures, which indicates that the thermal expansion coefficients are dependent on the nitrogen concentration. The lattice mismatch (Δd/d) between a lightly-doped free-standing epilayer (Nd= 6x1014cm-3) and a heavily-doped substrate (Nd= 2x1019cm-3) was calculated as 1.7x10-4at 1100°C. The authors also investigated lattice constants of high-dose N+, P+, and Al+-implanted 4H-SiC. Reciprocal space mapping (RSM) was utilized to investigate the lattice mismatch and misorientation. The RSM images show thec-lattice expansion andc-axis tilt of the ion-implanted layers, irrespective of ion species. The authors conclude that the lattice expansion is not caused by heavy doping itself, but by secondary defects formed after the ion-implantation and activation-annealing process.

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3

Doi, Takuma, Shigehisa Shibayama, Mitsuo Sakashita, Kazutoshi Kojima, Mitsuaki Shimizu, and Osamu Nakatsuka. "Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height." Applied Physics Express 15, no. 1 (2021): 015501. http://dx.doi.org/10.35848/1882-0786/ac407f.

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Abstract To obtain an ohmic contact with a flat interface using a low-temperature process, we investigated the behavior of Schottky barrier height (SBH) at the Mg/n-type 4H-SiC interface to low-temperature annealing. Our results revealed that annealing at 200 °C reduced SBH; a low SBH of 0.28 eV was obtained on the lightly doped substrate. Atomic force microscopy measurements revealed negligible increase in the surface roughness after Mg deposition and annealing. Using the low-temperature process, a contact resistivity of 6.5 × 10−5 Ω·cm2 was obtained on the heavily doped substrate, which is comparable to Ni/4H-SiC subjected to annealing of above 950 °C.

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4

Clouter, Maynard J., Yue Ke, Robert P. Devaty, Wolfgang J. Choyke, Y. Shishkin, and Stephen E. Saddow. "Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates." Materials Science Forum 556-557 (September 2007): 415–18. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.415.

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A lightly doped n-type homo-epitaxial layer was grown by CVD onto a heavily doped n-type 4H-SiC substrate for which half of the surface had been made porous by photoelectrochemical etching. Raman spectra are obtained in the optic phonon region using three scattering geometries. An effective medium model for the porous layer is used to assist in the interpretation of the spectra. This work demonstrates that the contributions to the Raman spectra of the various layers in a sample with multiple 4H-SiC layers can be extracted.

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5

Xia, Xinyi, Minghan Xian, Fan Ren, Md Abu Jafar Rasel, Aman Haque, and S. J. Pearton. "Thermal Stability of Transparent ITO/n-Ga₂O₃/n+-Ga₂O₃/ITO Rectifiers." ECS Journal of Solid State Science and Technology 10, no. 11 (2021): 115005. http://dx.doi.org/10.1149/2162-8777/ac3ace.

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The thermal stability of n/n+ β-Ga2O3 epitaxial layer/substrate structures with sputtered ITO on both sides to act as rectifying contacts on the lightly doped layer and Ohmic on the heavily doped substrate is reported. The resistivity of the ITO deposited separately on Si decreased from 1.83 × 10−3 Ω.cm as-deposited to 3.6 × 10−4 Ω.cm after 300 °C anneal, with only minor reductions at higher temperatures (2.8 × 10−4 Ω.cm after 600 °C anneals). The Schottky barrier height also decreased with annealing, from 0.98 eV in the as-deposited samples to 0.85 eV after 500 °C annealing. The reverse breakdown voltage exhibited a negative temperature coefficient of −0.46 V.C−1 up to an annealing temperature of 400 °C and degraded faster at higher temperatures. Transmission Electron Microscopy showed significant reaction at the ITO and Ga2O3 interface above 300 °C, with a very degraded contact stack after annealing at 500 °C.

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6

Hazenboom, S., T. S. Fiez, and K. Mayaram. "A Comparison of Substrate Noise Coupling in Lightly and Heavily Doped CMOS Processes for 2.4-GHz LNAs." IEEE Journal of Solid-State Circuits 41, no. 3 (2006): 574–87. http://dx.doi.org/10.1109/jssc.2006.869790.

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7

Kim, Kyoung-Ho, Minh-Tan Ha, Heesoo Lee, et al. "Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition." Materials 15, no. 3 (2022): 1050. http://dx.doi.org/10.3390/ma15031050.

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This study examined the microstructural gradation in Sn-doped, n-type Ga2O3 epitaxial layers grown on a two-inch sapphire substrate using horizontal hot-wall mist chemical vapor deposition (mist CVD). The results revealed that, compared to a single Ga2O3 layer grown using a conventional single-step growth, the double Ga2O3 layers grown using a two-step growth process exhibited excellent thickness uniformity, surface roughness, and crystal quality. In addition, the spatial gradient of carrier concentration in the upper layer of the double layers was significantly affected by the mist flow velocity at the surface, regardless of the dopant concentration distribution of the underlying layer. Furthermore, the electrical properties of the single Ga2O3 layer could be attributed to various scattering mechanisms, whereas the carrier mobility of the double Ga2O3 layers could be attributed to Coulomb scattering owing to the heavily doped condition. It strongly suggests the two-step-grown, lightly-Sn-doped Ga2O3 layer is feasible for high power electronic devices.

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8

Saw, Kim Guan, Sau Siong Tneh, Swee Yong Pung, Sha Shiong Ng, F. K. Yam, and Zainuriah Hassan. "Ultraviolet Photoresponse Properties of Zinc Oxide Nanorods on Heavily Boron-Doped Diamond Heterostructure." Advanced Materials Research 832 (November 2013): 172–77. http://dx.doi.org/10.4028/www.scientific.net/amr.832.172.

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Heterostructures consisting of ZnO and diamond appear to have an elusive nature. A rectifying behaviour was previously observed only for heterojunctions with very lightly doped p-type diamond using residual boron gas during the chemical vapour deposition process or type IIb diamond. Other studies, however, claimed to obtain a rectifying behaviour for heterojunctions with p-type diamond with higher carrier densities between 1018 1019 cm-3. In this work we investigate the behaviour of n-type ZnO on heavily boron-doped p-type diamond. This heterostructure that is sensitive to UV light has been fabricated using ZnO nanorods grown on heavily boron-doped chemical vapour deposition diamond substrates. The I -V measurements show a rectifying characteristic. The threshold voltages under dark and UV conditions are 3.66 and 2.52 V, respectively. The UV illumination also results in an increased current flow. The electrical behaviour due to the UV illumination will be discussed.

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9

de Lanerolle, N. "Titanium silicide growth by rapid-thermal processing of Ti films deposited on lightly doped and heavily doped silicon substrates." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 5, no. 6 (1987): 1689. http://dx.doi.org/10.1116/1.583649.

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10

Mazzola, Michael S., Swapna G. Sunkari, Janice Mazzola, et al. "Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy." Materials Science Forum 483-485 (May 2005): 397–400. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.397.

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Room temperature Fourier Transform Infrared Reflection Spectroscopy (FTIR) was used to investigate the thickness and Free Carrier Concentration (FCC) of heavily and lightly doped 4H and 6H-SiC epitaxial films. Multiple epitaxial layer stacks typical of lateral devices such as the MESFET were grown on 6H-SiC semi-insulating substrates. The estimation of thickness and FCC of the n-channel epi layer is improved by studying the Longitudinal Optical Phonon Plasmon Coupled Modes (LPP). A modelbased analysis of the experimental reflectance spectra from these samples is performed using a dielectric function that accounts for the phonon-photon coupling and plasmonphoton coupling. The value of the LPP+ mode frequency estimated from the reflectance spectrum in the range 600-1200 cm-1 is observed to increase in direct correlation with the electron free-carrier concentration.

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11

Bahena, Joel, Jonathan Fijal, Phillip Tyler, John Taddei, Matthias Wiemann, and Martin Figge. "An Alternate Approach to Backside Thinning: A Doping Selective Silicon Wet Etch." ECS Meeting Abstracts MA2022-01, no. 29 (2022): 1289. http://dx.doi.org/10.1149/ma2022-01291289mtgabs.

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Backside illuminated (BSI) technologies have been commonly used in CMOS image sensors and are finding a renewed interest for images and detectors for LiDAR application that has been driven by the automotive industry. As the integration of signal processing into microelectronic detectors progresses, active area and fill factor become issues for monolithic solutions. Processing the detector and readout circuitry (ROIC) on different wafers allows for the separate optimization of cost and performance. As a result, backside thinning had become a critical step in the process flow for BSI technologies, with the backside of wafers needed to be thinned down to within microns of active area to effectively couple incident photons. Conventional approaches to backside thinning utilize the buried oxide layer of an SOI wafer, which acts as a reliable etch stop since there are both wet and dry silicon etchants with suitable selectivity to the oxide. Despite the robust method for SOI wafer thinning, there are a few key disadvantages that attract the exploration of alternative routes. For instance, SOI wafers are expensive when compared to conventional epitaxial substrates, with the price reaching up to 5 times more depending on quantities. Additionally, the crystallinity of the silicon film on SOI wafers is typically lower than that of epitaxial silicon, which can lead to a decrease in device performance. Thus, to reduce cost and improve performance, an etch process that uses standard epitaxial substrates provides a favorable alternative. However, a method that can reliably, and precisely thin epitaxial substrates is needed. A possible approach would be to exploit a difference in dopant concentration between the substrate and epitaxial silicon. Doing so would require a wet etchant with sufficient selectivity to etch one of the silicon and use the other as an etch stop. The difficulty with this approach is that a change in dopant concentration is not as chemically distinct as a change in material. As such, reliably achieving precise and uniform final silicon film thicknesses presents a challenge that requires optimization of chemistry. Moreover, for such a method to be implemented on a production scale a working understanding of chemical bath life and wafer to wafer etch repeatability over a large sample size is necessary. This study provides a comprehensive examination on the feasibility and reliability of thinning epitaxial substrates and provides an outline for the development of a wet process that rapidly etches heavily doped substrate silicon (etch rate >5 µm/min) and uses a lightly doped device silicon layer as an etch stop (etch rate <0.2 µm/min). Optimal etchant compositions are investigated to identify a suitable chemistry for the required etch rates and selectivity. Furthermore, the effect of bath life and spiking/regeneration schemes on the performance of the etchant in a in a recirculated chemistry application is then explored. After preliminary development work was completed, the chemistry was used to thin a series of epitaxial wafers to explore the wafer-to-wafer repeatability of the developed process. Acknowledgements This project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 876659 (iRel40). The JU receives support from the European Union’s Horizon 2020 research and innovation programme and Germany, Austria, Slovakia, Sweden, Finland, Belgium, Italy, Spain, Netherlands, Slovenia, Greece, France, Turkey. Figure 1

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12

Sueoka, Koji. "Oxygen Precipitation in Lightly and Heavily Doped Czochralski Silicon." ECS Transactions 3, no. 4 (2019): 71–87. http://dx.doi.org/10.1149/1.2355747.

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13

Kimoto, Tsunenobu, Ryoya Ishikawa, Xilun Chi, Kyota Mikami, Keita Tachiki, and Mitsuaki Kaneko. "(Invited) Impacts of Anisotropic Material Properties on Performance of SiC Power Devices." ECS Meeting Abstracts MA2024-02, no. 32 (2024): 2294. https://doi.org/10.1149/ma2024-02322294mtgabs.

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Silicon carbide (SiC) has emerged as a wide bandgap semiconductor suitable for advanced high-voltage and low-loss power devices. Through rapid progress of both SiC material and device technologies in the last two decades, 600–3,300 V SiC power MOSFETs and Schottky barrier diodes are currently in volume production, demonstrating remarkable improvement of energy efficiency. So far, the 4H polytype of SiC (4H-SiC) has been exclusively used for fabrication of SiC electronic devices, owing to it superior physical properties and availability of large (150 mm diameter) and high-quality wafers. However, 4H-SiC exhibits significant anisotropy in physical, chemical, and interface properties, due to its unique hexagonal crystal structure. The authors have recently clarified several important anisotropic material properties of 4H-SiC and, in this paper, impacts of the anisotropic properties on performance of SiC power devices are overviewed. Since SiC power devices are fabricated as “vertical devices” on SiC(0001) wafers, the current mainly flows along <0001> and high voltage (i.e. high electric field) is applied along the same direction. Thus, carrier mobility and impact ionization coefficients along <0001> are key physical properties which determine the performance of SiC power devices. Regarding the mobility, the authors fabricated Hall-bar structures along <0001> and <1-100> side by side on custom-made SiC(11-20) epitaxial substrates. It turned out that the electron mobility along <0001> is about 15–20% higher than that along <1-100> (or <11-20>), the latter of which was ever measured in almost all the previous studies. The electron mobility along <0001> was determined in wide ranges of the donor density (5x1014–3x1018 cm-3) and temperature (200–600 K), and the highest mobility at room temperature ever reported (1210 cm2/Vs) was obtained along <0001> for a lightly-doped SiC epilayer. On the other hand, the hole mobility showed an opposite anisotropy: The hole mobility along <0001> is about 10–15% lower than that along <1-100>. The authors carefully considered the first Brillouin zone of 4H-SiC to interpret these mobility anisotropies and concluded that these anisotropies can be quantitatively explained by the anisotropy of effective mass, taking account of energy distribution of carriers. The impact ionization coefficients of electrons and holes along <0001> and <11-20> were also determined by analyzing photo-multiplication current of many different SiC pn diodes fabricated on (0001) and (11-20) substrates, respectively. Although the ionization coefficients of holes along both the directions (<0001> and <11-20>) and the coefficient of electrons along <11-20> are all similar, the coefficient of electrons along <0001> is two- or three-orders-of-magnitude smaller. This unusually small impact ionization coefficient of electrons along <0001> can be explained by considering hot electrons in the unique conduction band (E – k dispersion in the first Brillouin zone) of 4H-SiC. As a result, the critical electric field, which determines the junction breakdown, along <0001> is significantly higher than that expected from the bandgap of SiC. Thus, the anisotropies of both electron mobility and critical electric field (both are higher along <0001>) give 4H-SiC vertical devices fabricated on (0001) wafers much superior performance compared with previous predictions published in literature. In SiC power MOSFETs with 600–1200 V class blocking voltage, the MOS channel resistance is the major component in the total on-resistance, because the drift resistance of the voltage-blocking layer is extremely low (< 3x10-4 Ω cm2) with SiC. The authors discovered that MOS channels on (11-20) and (1-100), both of which are perpendicular to the (0001) wafer surface, show much higher mobility (about 110–120 cm2/Vs) than those on (0001) (about 40 cm2/Vs) in n-channel MOSFETs with a lightly-doped p-body, as far as appropriate nitridation is performed after gate oxide formation. The high mobilities on (11-20) and (1-100) are attributed to the lower density of interface states especially near the conduction band edge in the SiO2/SiC structure, which leads to less electron trapping and less Coulomb scattering at the interface. These results have promoted development of high-performance SiC trench MOSFETs, where the MOS channels are formed on the trench sidewalls. In recent years, the authors achieved a high mobility of over 130 cm2/Vs in n-channel MOSFETs with a heavily-doped p-body on these planes by using an original oxidation-minimizing process. Furthermore, a reasonably high mobility of over 25 cm2/Vs was obtained in p-channel SiC MOSFETs on (11-20) and (1-100), which is two-fold improvement compared with (0001) MOSFETs. Impacts of these high mobilities on SiC MOSFETs are discussed in detail.

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14

LEWIS, R. A., and R. E. M. VICKERS. "TERAHERTZ MAGNETOSPECTROSCOPY OF HEAVILY-DOPED Si(P)." International Journal of Modern Physics B 23, no. 12n13 (2009): 2856–60. http://dx.doi.org/10.1142/s0217979209062451.

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We demonstrate that lightly-doped Si ( P ) displays extremely sharp absorption lines – the narrowest yet reported for any impurity in natural Si . The Zeeman splitting of many of these lines in magnetic fields <10 T has been studied previously by a number of groups. In this paper we focus on the behavior of metastable states associated with conduction-band Landau levels. The use of a rather heavily doped sample and strong magnetic fields, up to 18 T, assists in the observation of these.

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Li, H., J. Y. Ke, J. B. Pang, Bo Wang, and Z. Wang. "Defects in Electron Irradiation Te-Doped GaSb Studied by Positron Lifetime Spectroscopy." Materials Science Forum 607 (November 2008): 140–42. http://dx.doi.org/10.4028/www.scientific.net/msf.607.140.

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Defects induced by electron irradiation in Te-doped liquid-encapsulated Czochralski–grown GaSb were studied by the positron lifetime spectroscopy. The lifetime measurements under room temperature indicated there were VGa-related defects with a characteristic lifetime of 298 ps in the heavily Te-doped as-grown GaSb samples. The average lifetime increased with the increase of irradiation dose in lightly Te-doped GaSb,but the behavior was opposite in the heavily Te-doped samples. It should be due to the shift of Fermi level in heavily Te-doped GaSb and the occurrence of gallium vacancies in different charge states. In the temperature dependence measurements carried out on heavily Te-doped samples, we observed positron shallow trap, and this shallow trap should be attributed to positrons forming hyrogenlike Rydberg states with GaSb antisite defects.

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16

Jin, Xin, and Hai Wang. "Space Charge Limited Current and Magnetoresistance in Si." Advanced Materials Research 750-752 (August 2013): 952–55. http://dx.doi.org/10.4028/www.scientific.net/amr.750-752.952.

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Mott and Gurney point out1, for defect-free semiconductors, I-V curve deviates from linear Ohmic type to nonlinear space-charge limited behavior at high electric field. A surprising large magnetoresistance (MR) has been reported in space-charge limited region by Delmo2-4recently. In present work, I-V and MR curves of silicon samples with different doping concentration are measured. It is observed that I-V curve enters into space charge region at lower voltage in heavily doped samples, however, space-charge limited current is absent in lightly doped samples. Two samples show different types of MR curve. In heavily doped samples, 8% MR is acquired at 3kG and the value of MR increases linearly up to 17%, while MR increases slowly up to 11% in lightly doped samples. It is believed that the dopant and trap in N-type silicon has a strong influence on the space-charge limited current and MR.

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17

Kouchi, T., K. Yoshinaga, S. Nishioka, et al. "⁷⁵As NMR studies on iron-based La1111 superconductors in lightly and heavily electron doped states." Journal of Physics: Conference Series 2323, no. 1 (2022): 012011. http://dx.doi.org/10.1088/1742-6596/2323/1/012011.

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Abstract We report 75As NMR experiments in heavily electron-doped LaFePnO0.75H0.25 (Pn=As1−x Sb x and As1−x′ P x′ ) compounds with the maximum T c max ( ∼ 33.1 K ) , and compare with the previous results in lightly electron-doped LaFePn(O,F) compounds. The Tc of this series can be sensitively controlled by the pnictogen height (hPn ) through the substitution at Pn site, and the electron doping level through the substitution at the O site with H or F. In heavily electron-doped LaFePnO(La1111) compounds, we found that spin fluctuations at low-energies were moderately suppressed upon cooling in the Sb-substituted high Tc compounds with high hPn (x ≥ 0), although they are completely suppressed in P-substituted non-superconducting compounds (x′ ≥ 0.2) with lower hPn . This feature is largely different from that in the lightly doped La1111 compounds with the well-nested Fermi surfaces, where the spin fluctuations are critically enhanced upon cooling. Here, we present the characteristics of spin fluctuations over wide doping region of La1111-based compounds, and discuss the relationship with the superconductivity.

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18

Bronckers, Stephane, Geert Van der Plas, Gerd Vandersteen, and Yves Rolain. "Substrate Noise Coupling Mechanisms in Lightly Doped CMOS Transistors." IEEE Transactions on Instrumentation and Measurement 59, no. 6 (2010): 1727–33. http://dx.doi.org/10.1109/tim.2009.2024370.

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Abramson, A. R., P. Nieva, H. Tada, P. Zavracky, I. N. Miaoulis, and P. Y. Wong. "Effect of doping level during rapid thermal processing of multilayer structures." Journal of Materials Research 14, no. 6 (1999): 2402–10. http://dx.doi.org/10.1557/jmr.1999.0323.

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A numerical model has been developed to examine the temperature history of a multilayer wafer undergoing rapid thermal processing (RTP) for various doping densities. Partial transparency and thin film interference effects are considered. Doping levels from ∼1015 to ∼1018 cm−3 are examined. Numerical temperature predictions of the lightly doped wafer are compared with experimental measurements. Heating rates for the lightly doped wafer fluctuate due to partial transparency effects and reach a maximum of ∼50 °C/s. The heavily doped wafer sees a maximum heating rate of ∼100 °C/s. Because the wafers are opaque above 700 °C regardless of their level of doping, all wafers reach steady state at ∼845 °C.

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Kalinina, Evgenia, Alexandr Lebedev, Baptiste Berenguier, Laurent Ottaviani, and Vladimir A. Skuratov. "SiC UV Detectors under Heavy Ions Irradiation." Materials Science Forum 821-823 (June 2015): 867–70. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.867.

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4H-SiC ultraviolet photodetectors based on Schottky barriers have been formed on lightly doped n-type epitaxial layers grown by chemical vapor deposition method on industrial substrates. The diode structures were irradiated at 25°C with 167 MeV Xe ions at a fluence of 6x109 cm-2. Comparative studies of the optical and electrical properties of initial and irradiated structures with Schottky barriers were carried out in temperature range 23-180°C. Swift heavy ion stimulated changes in photosensitivity and electrical characteristics of the initial and irradiated detectors are explained in terms of the fluctuation traps model with the subsequent thermal dissociation.

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Li, Zhi-Peng, Toshiyuki Mori, Fei Ye, Ding Rong Ou, Jin Zou, and John Drennan. "Dislocation Associated Incubational Domain Formation in Lightly Gadolinium-Doped Ceria." Microscopy and Microanalysis 17, no. 1 (2010): 49–53. http://dx.doi.org/10.1017/s143192761009416x.

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AbstractNanosized incubational domain was observed in 10 at.% gadolinium-doped ceria (GDC) using high-resolution transmission electron microscopy. Dislocations were extensively observed in 10 at.% GDC instead of heavily doped 25 at.% GDC. By Fast Fourier Transform and Inverse Fast Fourier Transform analysis, it was noticed that the incubational domain existing in 10 at.% GDC has different lattice spacing and orientation from the neighboring ceria matrix. Furthermore, dislocations were usually observed in the interface region between the incubational domain and the ceria matrix. Based on experimental results, the formation mechanism of dislocation associated incubational domain in lightly gadolinium-doped ceria is rationalized.

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Dahal, Rajendra, Sauvik Chowdhury, Collin W. Hitchcock, T. Paul Chow, and Ishwara B. Bhat. "Fabrication of Thick Free-Standing Lightly-Doped n-Type 4H-SiC Wafers." Materials Science Forum 897 (May 2017): 379–82. http://dx.doi.org/10.4028/www.scientific.net/msf.897.379.

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In this work, we have developed a selective wet etching technique for n+-SiC substrate using electrochemical etch process. A mixture of hydrofluoric acid and hydrogen peroxide was used as an electrolyte and the etch rates exceeding 200 μm per hour at the current density of 50 mAcm-2 was achieved. This process is highly selective and the etching process stops at the interface of n+ SiC substrate and n-SiC epi layer. Using this process, we have successfully fabricated 180 to 250 μm thick 4’’ n-SiC epitaxial free standing wafers by separating them from a 350 μm thick n+ SiC substrate. After the substrate is completely removed, free standing wafer is characterized for wafer bow and minority carrier lifetime, using both Si-face and C-face. The wafer bow was reduced from 40 μm to 20 μm after the substrate removal. It was found that the process of removing the substrate does not introduce any extra damage to the wafer as far as the lifetime is concerned. The hole lifetime measured by microwave photoconductivity decay technique was unchanged at around 2 μsec, measured from both Si-face and C-face. These results are very promising and open up many avenues for many device applications where lightly doped free standing epitaxial semiconductor thin film is needed.

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Luo, Lan, Guofu Niu, Kurt A. Moen, and John D. Cressler. "Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K." IEEE Transactions on Electron Devices 56, no. 10 (2009): 2169–77. http://dx.doi.org/10.1109/ted.2009.2028046.

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In this paper, we investigate the physics and modeling of temperature dependence of various parasitic resistances in SiGe heterojunction bipolar transistors down to 30 K. Carrier freezeout is shown to be the dominant contributor to increased resistances at cryogenic temperatures for lightly-doped and moderately-doped regions, whereas the temperature dependence of the mobility is the dominant contributor to the temperature dependence of heavily-doped regions. Two incomplete ionization models, the classic model with a doping dependent activation energy and the recent model of Altermatt , are shown to underestimate and overestimate incomplete ionization rate below 100 K for intrinsic base doping, respectively. Analysis of experimental data shows that the bound state fraction factor is temperature dependent and including this temperature dependence enables compact modeling of resistances from 30 to 300 K for moderately-doped regions. For heavily-doped regions, a dual power law mobility approximation with complete ionization is shown to work well down to 30 K. An alternative approach is also presented for heavily-doped resistors which allows one to use the same model equation for all regions.

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Mikhaylov, Aleksey I., S. A. Reshanov, Adolf Schöner, et al. "High Channel Mobility 4H-SiC MOSFETs by As and P Implantation Prior to Thermal Oxidation in N₂O Atmosphere." Materials Science Forum 858 (May 2016): 651–54. http://dx.doi.org/10.4028/www.scientific.net/msf.858.651.

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High channel mobility 4H-SiC MOSFETs have been demonstrated by phosphorus and arsenic implantation prior to thermal oxidation in N2O. The maximum field-effect mobility of 81 and 114 cm2/Vs were achieved, respectively. The MOSFET fabrication was done on lightly aluminium doped p-type epitaxial layers and on heavily aluminium implanted p-well.

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25

Singh, Pawan Kumar, and Sanjay Sharma. "Substrate Coupling of RF CMOS on Lightly Doped Substrate for Nanoscale Mixed-Signal Design." Journal of Computational and Theoretical Nanoscience 11, no. 4 (2014): 1184–88. http://dx.doi.org/10.1166/jctn.2014.3480.

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26

Meintjes, Ernesta M., William W. Warren,, and James P. Yesinowski. "Temperature-dependent 29Si NMR resonance shifts in lightly- and heavily-doped Si:P." Solid State Nuclear Magnetic Resonance 55-56 (October 2013): 91–94. http://dx.doi.org/10.1016/j.ssnmr.2013.10.002.

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27

Lee, Ho‐Jun, Chang‐Soo Kim, Chul‐Hi Han, and Choong‐Ki Kim. "Direct growing of lightly doped epitaxial silicon without misfit dislocation on heavily boron‐doped silicon layer." Applied Physics Letters 65, no. 17 (1994): 2139–41. http://dx.doi.org/10.1063/1.112769.

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28

Zhang, Le, Er-Ping Li, Xiao-Peng Yu, and Ran Hao. "Modeling and Optimization of Substrate Electromagnetic Coupling and Isolation in Modern Lightly Doped CMOS Substrate." IEEE Transactions on Electromagnetic Compatibility 59, no. 2 (2017): 662–69. http://dx.doi.org/10.1109/temc.2016.2629702.

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29

Zheng, G. Q., T. Kuse, Y. Kitaoka, et al. "17O NMR study of La2−xSrxCuO4 in the lightly-and heavily-doped regions." Physica C: Superconductivity 208, no. 3-4 (1993): 339–46. http://dx.doi.org/10.1016/0921-4534(93)90206-6.

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30

Hewitt, S. B., S. P. Tay, N. G. Tarr, and A. R. Boothroyd. "Silicon carbide emitter diodes by LPCVD (low-pressure chemical vapour deposition) using di-tert-butylsilane." Canadian Journal of Physics 70, no. 10-11 (1992): 946–48. http://dx.doi.org/10.1139/p92-151.

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Stoichiometric SiC films formed by low-pressure chemical vapour deposition from a di-tert-butylsilane source with in situ phosphorus doping from tert-butylphosphine were used as emitters in heterojunction diodes fabricated on lightly doped silicon substrates. Diode characteristics are nearly ideal, with forward current dominated by injection-diffusion in the silicon substrate.

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31

Shiba, Seiji, and Koji Sueoka. "TEM Observation of the Dislocations Nucleated from Cracks inside Lightly or Heavily Doped Czochralski Silicon Wafers." Advances in Condensed Matter Physics 2011 (2011): 1–6. http://dx.doi.org/10.1155/2011/541318.

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The crack propagation from the indent introduced with a Vickers hardness tester at room temperature and the dislocation nucleation from the cracks at 900°C inside lightly boron (B), heavily B, or heavily arsenic (As) doped Czochralski (CZ) Si wafers were investigated with transmission electron microscopy (TEM) observations. It was found that the dopant concentration and the dopant type did not significantly affect the crack propagation and the dislocation nucleation. The slip dislocations with a density of about (0.8∼2.8) × 1013/cm3were nucleated from the cracks propagated about 10 μm in depth. Furthermore, small dislocations that nucleated with very high density and without cracks were found around the indent introduced at 1000°C.

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32

Fushimi, Hiroshi, Masanori Shinohara, and Kazumi Wada. "Effects of native defects on carrier concentrations in heavily Si-doped and adjoining lightly doped GaAs layers." Journal of Applied Physics 81, no. 4 (1997): 1745–51. http://dx.doi.org/10.1063/1.364030.

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33

Zhang, Xue Nan, Jian Hong Li, Yu Tian Wang, et al. "Gas Phase Phosphorus Heavily-Doped FZ Silicon Thermal Field Design and Growth Method." Advanced Materials Research 430-432 (January 2012): 929–32. http://dx.doi.org/10.4028/www.scientific.net/amr.430-432.929.

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This paper introduces the fabrication method of a kind of gas phase phosphorus heavily-doped float zone (FZ) silicon, including thermal field design (electromagnetic copper coil with double water cooling system). This method solves the problems during the pulling process of heavily-doped FZ silicon crystal of phosphorus doped. The gas phase phosphorus heavily-doped FZ silicon crystal using this methods with low oxygen content (less than 0.2ppma),low radial resistivity variation (less than 10%), low resistivity (the minimum of 0.002 ohm.cm), and is good to meet the transient voltage suppressor (TVS) for silicon substrate material requirements.

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34

Valckx, Nick, Daniel Cuypers, Rita Vos, et al. "Study of the Etching Mechanism of Heavily Doped Si in HF." Solid State Phenomena 187 (April 2012): 41–44. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.41.

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Following Moores scaling law, the transistor source and drain area become shallower and higher doped regions. As a consequence the limitations of substrate and dopant loss during cleaning become more stringent. For a better understanding, highly B, As and P doped blanket substrates, either prepared by ion implantation or by EPI growth, are studied. Substrate and dopant loss as a function of time and different HF etching conditions is monitored by Inductively Coupled Plasma Mass Spectrometry (ICP-MS) and additional techniques like Spectroscopic Ellipsometry (SE), .... It is shown that in general, the Si etching is dependent of the position of the Fermi level. More remarkably, the junction (4 nm) of a non-annealed heavily As or P doped substrate is completely removed after less than 20 min of etching in HF. This process is related to enhanced etch rates because of the amorphization of the substrate.

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35

Jia, Hujun, Mengyu Dong, Xiaowei Wang, Shunwei Zhu, and Yintang Yang. "A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region." Micromachines 12, no. 5 (2021): 488. http://dx.doi.org/10.3390/mi12050488.

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A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, reduces the gate-source capacitance (Cgs) by adding a lightly doped region and improves the breakdown voltage (Vb) by embedding an insulated region (Si3N4). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (fmax), the maximum power added efficiency and the maximum theoretical output power density (Pmax) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure.

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36

Naderi, Ali. "Improvement in the performance of graphene nanoribbon p-i-n tunneling field effect transistors by applying lightly doped profile on drain region." International Journal of Modern Physics B 31, no. 31 (2017): 1750248. http://dx.doi.org/10.1142/s0217979217502484.

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In this paper, an efficient structure with lightly doped drain region is proposed for p-i-n graphene nanoribbon field effect transistors (LD-PIN-GNRFET). Self-consistent solution of Poisson and Schrödinger equation within Nonequilibrium Green’s function (NEGF) formalism has been employed to simulate the quantum transport of the devices. In proposed structure, source region is doped by constant doping density, channel is an intrinsic GNR, and drain region contains two parts with lightly and heavily doped doping distributions. The important challenge in tunneling devices is obtaining higher current ratio. Our simulations demonstrate that LD-PIN-GNRFET is a steep slope device which not only reduces the leakage current and current ratio but also enhances delay, power delay product, and cutoff frequency in comparison with conventional PIN GNRFETs with uniform distribution of impurity and with linear doping profile in drain region. Also, the device is able to operate in higher drain–source voltages due to the effectively reduced electric field at drain side. Briefly, the proposed structure can be considered as a more reliable device for low standby-power logic applications operating at higher voltages and upper cutoff frequencies.

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37

Wu, A., R. D. Schrimpf, H. J. Barnaby, D. M. Fleetwood, R. L. Pease, and S. L. Kosier. "Radiation-induced gain degradation in lateral PNP BJTs with lightly and heavily doped emitters." IEEE Transactions on Nuclear Science 44, no. 6 (1997): 1914–21. http://dx.doi.org/10.1109/23.658962.

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38

Aleksandrov, L. N., and P. L. Novikov. "Morphology of porous silicon structures formed by anodization of heavily and lightly doped silicon." Thin Solid Films 330, no. 2 (1998): 102–7. http://dx.doi.org/10.1016/s0040-6090(98)00605-1.

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39

Dutta, Pradipta, Binit Syamal, Kalyan Koley, N. Mohankumar, and C. K. Sarkar. "A New Threshold Voltage and Drain Current Model for Lightly/Heavily Doped Surrounding Gate MOSFETs." Journal of Computational and Theoretical Nanoscience 12, no. 9 (2015): 2515–22. http://dx.doi.org/10.1166/jctn.2015.4057.

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40

Shenai, K. "Formation and properties of rapid thermally annealed TiSi2 on lightly doped and heavily implanted silicon." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 6, no. 6 (1988): 1728. http://dx.doi.org/10.1116/1.584168.

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41

Wang, En-Ge, Li-Yuan Zhang, and Huai-Yu Wang. "Local density of states of silicon impurity in lightly and heavily doped AlAs/GaAs superlattices." Materials Science and Engineering: B 5, no. 3 (1990): 371–75. http://dx.doi.org/10.1016/0921-5107(90)90101-g.

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42

Liang, Fangzhou, Wen Chen, Meixin Feng, et al. "Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate." Photonics 8, no. 2 (2021): 28. http://dx.doi.org/10.3390/photonics8020028.

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GaN Schottky barrier ultraviolet photodetectors with unintentionally doped GaN and lightly Si-doped n−-GaN absorption layers were successfully fabricated, respectively. The high-quality GaN films on the Si substrate both have a fairly low dislocation density and point defect concentration. More importantly, the effect of Si doping on the performance of the GaN-on-Si Schottky barrier ultraviolet photodetector was studied. It was found that light Si doping in the absorption layer can significantly increase the responsivity under reverse bias, which might be attributed to the persistent photoconductivity that originates from the lowering of the Schottky barrier height. In addition, the devices with unintentionally doped GaN demonstrated a relatively high-speed photo response. We briefly studied the mechanism of changes in Schottky barrier, dark current and the characteristic of response time.

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43

Satou, A., Y. Koseki, V. Ryzhii, V. Vyurkov, and T. Otsuji. "Damping mechanism of terahertz plasmons in graphene on heavily doped substrate." Journal of Applied Physics 115, no. 10 (2014): 104501. http://dx.doi.org/10.1063/1.4867971.

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44

Szmyd, D. M., and A. Majerfeld. "Substrate‐induced peak in the photoluminescence of heavily doped epitaxial GaAs." Journal of Applied Physics 65, no. 4 (1989): 1788–90. http://dx.doi.org/10.1063/1.342906.

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45

Kitano, Tomohisa, Noriyuki Kodama, Tetsuya Sakai, and Shuichi Saito. "Suppression of Titanium Disilicide Formation on Heavily Arsenic-Doped Silicon Substrate." Japanese Journal of Applied Physics 35, Part 1, No. 2A (1996): 591–92. http://dx.doi.org/10.1143/jjap.35.591.

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46

Manninen, Antti, Jari Kauranen, Jukka Pekola, et al. "Single Electron Transistor Fabricated on Heavily Doped Silicon-on-Insulator Substrate." Japanese Journal of Applied Physics 40, Part 1, No. 3B (2001): 2013–16. http://dx.doi.org/10.1143/jjap.40.2013.

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47

Слипченко, С. О., А. А. Подоскин, О. С. Соболева та ін. "Исследования процессов транспорта носителей заряда в изотипных гетероструктурах типа n-=SUP=-+-=/SUP=--GaAs/n-=SUP=-0-=/SUP=--GaAs/n-=SUP=-+-=/SUP=--GaAs с тонким широкозонным барьером AlGaAs". Физика и техника полупроводников 54, № 5 (2020): 452. http://dx.doi.org/10.21883/ftp.2020.05.49258.9344.

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Abstract Experimental studies of n ^+-GaAs/ n ^0-GaAs/ n ^+-GaAs isotype heterostructures with a 100-nm-thick wide-gap N ^0-AlGaAs barrier situated in the n ^0-GaAs region are carried out. It is shown that the current–voltage characteristic of the structures under study has a negative-differential-resistance (NDR) portion, with the transition to this region occurring with a time delay that may reach tens of nanoseconds. It is found that operation in the NDR region is associated with the onset of impact-ionization process. Numerical analysis in terms of the energy-balance model demonstrated that the transition to the NDR region is associated with the formation of an electric field domain that covers a part of the lightly doped region between the thin wide-gap N ^0-AlGaAs barrier and the heavily doped n ^+-GaAs layer and with the onset of impact ionization at the interface with the heavily doped n ^+-GaAs layer. A comparative analysis of the experimental data and the modeling results showed that, for the current–voltage characteristics of the heterostructures under study to be correctly described, the model should take into account the less pronounced ability of a heterojunction to restrict carrier transport in the barrier layer.

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48

Wang, Yue, Lixin Wang, Yuanzhe Li, Mengyao Cui, and Zhuoxuan Zheng. "A Single-Event Burnout Hardened Super-Junction Trench SOI LDMOS with Additional Hole Leakage Paths." Electronics 11, no. 22 (2022): 3764. http://dx.doi.org/10.3390/electronics11223764.

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In this paper, a novel super-junction trench silicon-on-insulator laterally-diffused metal-oxide-semiconductor (SJT SOI LDMOS) power device with additional hole leakage paths to improve single-event burnout (SEB) performance under high liner energy transfer (LET) is proposed for the first time. The electrical characteristics and SEB performance of the proposed SJT SOI LDMOS are both enhanced effectively. The replacement of a lightly doped N drift region with a heavily doped P pillar and N pillar considerably improves the tradeoff between breakdown voltage (BVDS) and specific on-resistance (Ron,sp). Compared with the conventional trench SOI LDMOS (CT SOI LDMOS), the static figures of merit (FOM, BVDS2/Ron,sp) of the SJT SOI LDMOS increases by 239%. The SEB performance of the SJT SOI LDMOS is significantly improved as the holes induced by the heavy ion can be quickly absorbed to the trench source metal through the heavily doped P+ region and P buried region rather than the base resistor of the parasitic bipolar junction transistor (BJT). The SEB threshold voltage (VSEB) of the CT SOI LDMOS is 58 V (39% of the BVDS) and that of the SJT SOI LDMOS is up to 173 V (87% of the BVDS) at high LET of 1 pC/μm.

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49

Wang, C. C., V. D. Patton, S. A. Akbar, and M. A. Alim. "Effect of zirconia doping on the electrical behavior of yttria." Journal of Materials Research 11, no. 2 (1996): 422–29. http://dx.doi.org/10.1557/jmr.1996.0051.

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The ac electrical behavior of yttria doped with a zirconia concentration ranging from 0.15 to 20 mole % is investigated in the temperature range of 800 to 1300 °C. The ac electrical data, obtained in the range from 5 Hz to 13 MHz, indicated two distinct relaxations when analyzed in the impedance plane. These relaxations are attributed to lumped grains and trapping within grain boundaries, including possible electrode/sample effects. The admittance plane analysis revealed a semicircular relaxation in the low-frequency region, indicating identical response to that of the low-frequency relaxation of the impedance plane. The incorporation of zirconia into yttria is found to lower the activation energy of conduction in the grains and enhance ionic contribution to the overall electrical conduction. The PO2 studies and transference number measurements near atmospheric region indicate that p-type conduction dominates for the lightly doped yttria. An ionic contribution to the conduction processes becomes significant in heavily doped samples at/near atmospheric PO2.

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50

Трухин, В. Н., В. А. Соловьев, И. А. Мустафин та М. Ю. Чернов. "Терагерцевая генерация в эпитаксиальных пленках InAs". Письма в журнал технической физики 48, № 3 (2022): 51. http://dx.doi.org/10.21883/pjtf.2022.03.51985.19051.

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We present the results of terahertz generation studies under excitation via femtosecond lasers pulses epitaxial films of InAs, which were synthesized on semi-insulating and highly doped GaAs substrates. It is shown that a terahertz emitter based on epitaxial InAs film grown on a heavily doped GaAs n-type substrate, has the same terahertz generation efficiency as the InAs-film emitter grown on a semi-isolating GaAs substrate, but it has a significantly better spectral resolution, which is mainly determined by the parameters of the optical delay line and the femtosecond laser’s stability.

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