Academic literature on the topic 'Lithographer'
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Journal articles on the topic "Lithographer"
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Meijer, Rob, Peter Thomson, and Lysbeth Croiset van Uchelen-Brouwer. "The History of the Lithographie Royale, 1818-25." Quaerendo 31, no. 4 (2001): 281–306. http://dx.doi.org/10.1163/157006901x00173.
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AbstractFrom 1816 lithographic businesses began to develop in Western Europe. Use was made of a printing technique, lithography - based on the repellent working of water and fat - which was catching on especially in Germany and France. The Low Countries remained behind: early in 1818 only small lithographic printing offices were to be found in Brussels, Amsterdam and Rotterdam. At about that time the Frenchman MJ.V. Duval de Mercourt, calling himself an architect, presented himself in the Netherlands. Stimulated by the Dutch envoy at the court of Paris, Baron Fagel, he requested King William I to be permitted to found lithographical offices in The Hague and Brussels and to call himself Royal Lithographer. This was permitted by Royal Decree of 16 July 1818. Added to it was, highly unusually, that the establishment of Duval was greeted with approval, and that the hope was expressed that he might succeed in his attempts. The background of all this was the industrialisation policy that was pursued more in particular by the king himself. Indeed, Duval set about his business with great expectations and fervour. Probably he officially opened a - for Dutch standards - large lithographic printing office which consisted of at least two presses, which he called the Lithographie Royale'. He focused in particular on government commissions and especially on making autographs of written documents which up to that time had to be copied by hand. This technique, where writing was done with fat ink on prepared paper, after which the text was transferred to the stone and printed, seemed a godsend indeed. This autographic technique also had the king's interest: for, would it not be possible to introduce it and subsequently discharge clerks at the ministries? The future seemed to favour Duval, but alas, reality was different. It appeared that government as well as private institutions would provide him with hardly any work, possibly because of his high prices. It is also remarkable that some ministries did not want to have anything to do with this new printing method. After half a year he was already threatened with financial downfall, also through a loss he had personally suffered and the downward turn of the Dutch economy. The king then intervened with a number of measures in favour of Duval, of which the most important was that he was allowed to work for the Ministry of Water Management. An attempt was also made to accommodate him at the Algemeene Landsdrukkerij in The Hague, a government printing office with a monopoly on all government printed matter. The directors, however, confirmed letterpress printers, did not believe in this new printing technique which, according to them, could have no future because it would always be more expensive than their own beautiful printing. Because the locations of the ministries were changing between The Hague and Brussels about every half year, Duval was forced to follow the Ministry of Water Management to Brussels and to found a lithographic printing office there as well. Although he was supplied with more work there, he appeared to be at the end of his tether half way through 1819 due to a lack of financial resources. His financial situation was such that he was even refused a government advance because it was feared that he would not be able to reimburse it. Thereafter he was forced to make a disadvantageous contract with a private person, after which he left for The Hague, a destitute man. Although work from the Ministry of Water Management was also given to him there, things continued to go downhill for him. He now also lost his premises in The Hague so that he could no longer accept commissions. True, some time later a new place was found, but he had to agree that his co-worker, D. Abrahams, was to be appointed as his partner. Halfway through 1820 there arrived at last a reply to the many petitons and pleas he had sent to the king. This was, however, negative, because it was feared that a financial contribution from the government might slow down the downfall of his enterprise, but would not prevent it. Even damages were not granted because he was supposed to have given a false impression of things. He then left first to go to Brussels and later on to France, leaving his lithographic printing office in The Hague to Abrahams. The latter succeeded in getting the enterprise off to a good start within a few years, notably by making lithographs and trading in lithographs and sheet music, the main aim of the business. From about 1823 the number of commissions for lithographs increased, with a marked improvement in the quality of his work. This resulted in an honourable mention in the second industry exhibition held in the Netherlands in the summer of 1825. During this exhibition he was appointed first lithographer at the Algemeene Landsdrukkerij! This was because the king had intervened anew in the field of lithography and persevered against the advice of his minister in having an autographic printing office there, an office that was to be closed in 1832 due to lack of work and with great losses. The Lithographic Royale subsequently stopped its activities after Abrahams had received a compensation in his salary for it. Finally, the lithographic activities in The Hague were continued by his brother, A.M. Abrahams, on a modest scale.
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Mellby, Julie. "Victor Prevost: Painter, Lithographer, Photographer." History of Photography 35, no. 3 (August 2011): 221–39. http://dx.doi.org/10.1080/03087298.2011.581419.
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Volgunov, D. V., A. E. Pestov, N. N. Salashchenko, M. N. Toropov, and N. I. Chkhalo. "Nanostructure formation on an EUV lithographer stand: First results." Bulletin of the Russian Academy of Sciences: Physics 77, no. 1 (January 2013): 1–5. http://dx.doi.org/10.3103/s1062873813010218.
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Vandаlovskyi, V. "Artistic and technical features of the lithographic manner mixed technique." Research and methodological works of the National Academy of Visual Arts and Architecture, no. 27 (February 27, 2019): 92–98. http://dx.doi.org/10.33838/naoma.27.2018.92-98.
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Nowadays the problem of improving the artistic and technical features of the lithographic manner of mixed technique has matured already. The author of this study expanded and supplemented the ways of combining a variety of manners of lithographic techniques through practical experiments to achieve positive results in this area. Mixed technique is one of the types of lithography, in which a certain combination of lithographic manners engraving on stone with pencil, blurring ink, root paper, color lithography is used on one stone depending on the intent of the author, his artistic taste and possession of a large number of techniques in lithography, such as shading, sketching, blurring ink, pen, prints of cloth and other textures and the like. Lithography got the greatest spread in France, the gifted artists on stone included T. Géricault, Antoine-Jean Gros, Claude Joseph Vernet, Nicolas-Toussaint Charlet, O. Raffet, Ferdinand Victor Eugène Delacroix, Louis-Léopold Boilly, Paul Gavarni, Henri Grévedon, A. Toulouse-Lautrec and many others. Famous Ukrainian artists, namely M. Deregus, M. Popov, S. Yakutovich, and others worked in lithographic mixed technique. In particular, N. Popov in the creation of graphic works used the author's manner of execution of lithographs – drawing with acid. In artistic creativity to the main lithographic technique artists add elements of other graphic techniques: combine with etching, woodcut, monotype and other techniques. The program of teaching lithography in National Academy of Fine Arts and Architecture in methodical terms is designed so that the student of the specialty "Free graphics, design and illustration of the book", mastering lithographic technique and getting acquainted with her manners, could be able to do on this basis a mixed lithographic technique. Mixed technique is the final task, in which the student is given the opportunity to choose and combine the manners of lithography. Senior students improve their knowledge in the field of technical and technological capabilities of lithography. Due to the rich, original technique lithography has unlimited visual possibilities. It met the requirements of different artists, despite the difference in styles, language and artistic techniques. Lithography makes it possible to solve the composition in black and white, dashed, tonal, color techniques through the use of different manners.
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ΣΚΛΑΒΕΝΙΤΗΣ, ΤΡΙΑΝΤΑΦΥΛΛΟΣ Ε. "ΤΥΧΕΣ ΤΗΣ ΑΠΟ 5-9-1816 ΕΠΙΣΤΟΛΗΣ TOΥ Α. ΚΟΡΑΗ (ΜΟΛΙΕΡΟΣ, ΚΟΚΚΙΝΑΚΗΣ, ΣΚΥΛΙΤΣΗΣ ΚΑΙ ΛΙΘΟΓΡΑΦΟΣ)." Μνήμων 26 (January 1, 2004): 227. http://dx.doi.org/10.12681/mnimon.841.
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<p>Triantaphyllos E. Sklavenitis, The Fate of Korais's Letter of 5 September 1816. (Molière, Kokkinakis, Skylitsis and the lithographer)</p><p>In response to Adamantios Korais's suggestion that Tartuffe should be translated into Modern Greek, Konstantinos Kokkinakis translated the play, had it printed in 1815 and sent a copy to Korais for his comments. Korais set out his opinion on the translation, with critical comments, in a long letter to Kokkinakis dated 5 September 1816. In 1851 Ioannis Isidoridis Skylitsis published his own translation of Tartuffe in Smyrna and after twenty years, in 1871, republished it in a reviewed form. Both in his prefatory notes and in his translation, Skylitsis repudiated Korais's condemnation of rhyming verse, and he also rejected Kokkinakis's decision to adhere as closely as possible to Moliere's words: instead, he followed the example of Konstantinos Oikonomos, who had made a free translation of L'Avare in 1816. However, in 1871's edition Skylitsis put as a frontispiece a fascimile lithograph of 1816's letter in honour of Korais's opinions despite the fact that he disagreed with them.</p>
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Blum, Ann. ""A Better Style of Art": The Illustrations of the Paleontology of New York." Earth Sciences History 6, no. 1 (January 1, 1987): 72–85. http://dx.doi.org/10.17704/eshi.6.1.5635758n4521384g.
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James Hall, like other authors and editors of 19th-century American state and federal surveys, learned first hand that publishing illustrations was time-consuming, frustrating and expensive. But illustrations were indispensible, providing the graphic communication of morphology that justified the author's taxonomic decisions. That essential information, however, passed through the hands of an illustrator and either an engraver or lithographer before it reached the scientific audience that would test and judge it. Artists and printers, therefore, needed close supervision; plates required careful proofing and sometimes cancellation. Hall, like his colleagues, vastly underestimated the time and expense that his project would entail. The plates illustrating the Palaeontology reflected changes occurring in American science and printing. Over the decades spanned by the publication, picture printing techniques changed from craft to industry, and converted from engraving to lithography; so did the New York survey. Meanwhile, the scientific profession developed illustration conventions to which publications with professional intent increasingly conformed. These conventions combined standards of "accuracy" with issues of style to reflect both scientific activity and its social context. The early illustrations drawn by Mrs. Hall were no less "accurate" although clearly less polished than the collaborations between R.P. Whitfield and F.J. Swinton, or the later work of J.H. Emerton and E. Emmons, Jr. The artists and printers of the Palaeontology plates emulated and contributed to the emerging national style of zoological and paleontological illustration, and thus helped consolidate the "look" of American science.
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Kwon, B., and Jong H. Kim. "Importance of Molds for Nanoimprint Lithography: Hard, Soft, and Hybrid Molds." Journal of Nanoscience 2016 (June 22, 2016): 1–12. http://dx.doi.org/10.1155/2016/6571297.
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Nanoimprint lithography has attracted considerable attention in academic and industrial fields as one of the most prominent lithographic techniques for the fabrication of the nanoscale devices. Effectively controllable shapes of fabricated elements, extremely high resolution, and cost-effectiveness of this especial lithographic system have shown unlimited potential to be utilized for practical applications. In the past decade, many different lithographic techniques have been developed such as electron beam lithography, photolithography, and nanoimprint lithography. Among them, nanoimprint lithography has proven to have not only various advantages that other lithographic techniques have but also potential to minimize the limitations of current lithographic techniques. In this review, we summarize current lithography techniques and, furthermore, investigate the nanoimprint lithography in detail in particular focusing on the types of molds. Nanoimprint lithography can be categorized into three different techniques (hard-mold, soft-mold, and hybrid nanoimprint) depending upon the molds for imprint with different advantages and disadvantages. With numerous studies and improvements, nanoimprint lithography has shown great potential which maximizes its effectiveness in patterning by minimizing its limitations. This technique will surely be the next generation lithographic technique which will open the new paradigm for the patterning and fabrication in nanoscale devices in industry.
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WATT, F., A. A. BETTIOL, J. A. VAN KAN, E. J. TEO, and M. B. H. BREESE. "ION BEAM LITHOGRAPHY AND NANOFABRICATION: A REVIEW." International Journal of Nanoscience 04, no. 03 (June 2005): 269–86. http://dx.doi.org/10.1142/s0219581x05003139.
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To overcome the diffraction constraints of traditional optical lithography, the next generation lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron or ion beam technologies to produce sub-100 nm features. Perhaps the most under-developed and under-rated is the utilization of ions for lithographic purposes. All three ion beam techniques, FIB (Focused Ion Beam), Proton Beam Writing (p-beam writing) and Ion Projection Lithography (IPL) have now breached the technologically difficult 100 nm barrier, and are now capable of fabricating structures at the nanoscale. FIB, p-beam writing and IPL have the flexibility and potential to become leading contenders as NGLs. The three ion beam techniques have widely different attributes, and as such have their own strengths, niche areas and application areas. The physical principles underlying ion beam interactions with materials are described, together with a comparison with other lithographic techniques (electron beam writing and EUV/X-ray lithography). IPL follows the traditional lines of lithography, utilizing large area masks through which a pattern is replicated in resist material which can be used to modify the near-surface properties. In IPL, the complete absence of diffraction effects coupled with ability to tailor the depth of ion penetration to suit the resist thickness or the depth of modification are prime characteristics of this technique, as is the ability to pattern a large area in a single brief irradiation exposure without any wet processing steps. p-beam writing and FIB are direct write (maskless) processes, which for a long time have been considered too slow for mass production. However, these two techniques may have some distinct advantages when used in combination with nanoimprinting and pattern transfer. FIB can produce master stamps in any material, and p-beam writing is ideal for producing three-dimensional high-aspect ratio metallic stamps of precise geometry. The transfer of large scale patterns using nanoimprinting represents a technique of high potential for the mass production of a new generation of high area, high density, low dimensional structures. Finally a cross section of applications are chosen to demonstrate the potential of these new generation ion beam nanolithographies.
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MARSH, ROGER. "‘A Multicoloured Alphabet’: Rediscovering Albert Giraud’s Pierrot Lunaire." twentieth-century music 4, no. 01 (March 2007): 97–121. http://dx.doi.org/10.1017/s1478572207000540.
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AbstractAlbert Giraud’s cycle of fiftyrondels bergamasques,Pierrot Lunaire(1884), famously became, in Otto Erich Hartleben’s German translation, the basis of Schoenberg’s Op. 21 (1912). But for many decades the work of the Belgian poet was either straightforwardly denigrated for its anachronism and ‘mediocrity’ (Boulez), or at least declared inferior to its ‘vivid, Angst-filled transformation’ (Youens) in Hartleben’s hands. This article questions some widely held beliefs concerning the originalPierrotand its subsequent reworking. The claim that Schoenberg’s selection and reorganization of the poems imposed logic and order on an otherwise jumbled collection is found to be belied by the striking narrative coherence of Giraud’s original sequence, which is unified by a clearly defined set of symbols. Meanwhile, Hartleben’s putative ‘infidelity’ to Giraud is challenged by evidence both internal (his careful preservation of the rondel structure) and contextual (an esteem for his Belgian contemporary manifested in further poetic homages). While there is no doubt that Hartleben’s translations distance the poems from their background in Parnassian aesthetics – omitting crucial references to Brueghel, Shakespeare, Watteau, and the painter and lithographer Adolphe Willette – it is Giraud himself who deserves the credit for the most strikingly memorable images later absorbed into the expressionistic milieu of Schoenberg’s melodrama.
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Voznesenskiy, Sergey, and Aleksandr Nepomnyaschiy. "Dose Characteristics of Multilayer Chitosan-Metal-Dielectric Nanostructures for Electronic Nanolithography." Solid State Phenomena 245 (October 2015): 195–99. http://dx.doi.org/10.4028/www.scientific.net/ssp.245.195.
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This paper presents the results of the study of chitosan-metal nanofilms for the formation of submicron structures on glass substrates by electron lithography. The dependence of their basic lithographic characteristics from the selection of the metal for intermediate layer is obtained.
Dissertations / Theses on the topic "Lithographer"
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Benoit-Renault, Viviane. "La lithographie en Bretagne (1819-1914)." Thesis, Paris 4, 2014. http://www.theses.fr/2014PA040217.
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Dans l’histoire de l’estampe, l’étude de la lithographie en province a longtemps été négligée et les premierstravaux fondateurs datent seulement d’une quarantaine d’années. L’objet de cette thèse en histoire de l’art est decombler cette lacune en analysant, dans un esprit d’interdisciplinarité ouvert à l’histoire économique et sociale, lalithographie en Bretagne historique de 1819 à 1914.Cette recherche s’appuie d’abord sur l’étude de l’imprimerie lithographique. Après un panorama généralsur l’évolution du nombre d’ateliers et leur répartition géographique, les centres lithographiques principaux etsecondaires sont étudiés. L’imprimerie autographique qui, en parallèle, s’implante et concurrence les atelierslithographiques est analysée, comme les imprimeries lithographiques sur fer-blanc, une particularité bretonne.Au-delà de cette étude historique, le chapitre suivant dresse le portrait des acteurs de l’imprimerie et de laproduction lithographique comme leur environnement social. C’est un monde où se mêlent l’artiste peintre,l’artiste lithographe de profession, l’amateur de dessin, l’imprimeur et l’ouvrier. La réalité du monde de l’estampeest abordée dans le troisième chapitre, avec un coup de projecteur sur l’atelier et sur l’histoire matérielle de lalithographie (presses et matrices). L’atelier est ensuite appréhendé comme un espace de vie autonome avec sesfêtes et ses codes, garants de la cohésion ouvrière. Une unité renforcée avec la création des syndicats delithographes dans la seconde moitié du XIXe siècle.Grâce à l’établissement d’un inventaire des lithographies, fondé sur le dépouillement du dépôt légal etdes fonds publics d’estampes, l’analyse de la production lithographique imprimée en Bretagne révèle unediversité thématique insoupçonnée. La lithographie artistique à la feuille, en recueils ou en albums illustrés estanalysée sous l’angle stylistique et iconographique. Enfin, l’étude de la lithographie utilitaire et des boîtes en ferblanclithographié clôt ce chapitre. Le commerce de l’estampe, qui constitue le dernier maillon du circuit de laproduction, est retracé avec ses marchands, une profession en mutation au XIXe siècle, ses colporteurs et autresvendeurs occasionnels. Enfin, la question de la diffusion de l’estampe en Bretagne est abordée comme le marchéet la place de la lithographie bretonne dans un réseau national et internationalIn the history of print, the study of lithography in province has long been neglected. The first founding worksonly date back to the last forty years. The purpose of this thesis on the history of art is to address this shortcomingby analysing lithography in historical Brittany between 1819 and 1914 bearing an interdisciplinarity mind open toeconomic and social history.Initially this research will be based on the study of lithographic printing. Following a general overviewon the evolution of the number of workshops and their geographical breakdown, leading and secondarylithographic centres are being considered. On the other hand, autographic printing which established itself andcame into competition with the lithographic workshops is being analysed with an emphasis on tin-plate printingworkshops being a characteristic feature of Brittany. Beyond this historical study, the following chapter paints aportrait of the printers and that of the lithographic production scene which being a social environment. It is aworld whereby the painter mingles with the professional lithographer, the drawing lover, the printer and thecraftsman. The reality of the printing world is being addressed in the third chapter with a particular focus on theworkshop and the history of the equipment specific to printing (plates and moulds). Subsequently the workshop isseen as a world in its own right with its celebrations and codes responsible for the working cohesion. This unitywill be accentuated in the second half of the XIX century with the constitution of lithographers unions. Thanksto the creation of a lithographs inventory drawn upon the austerity regarding registration of copyright and printpublic funds, the analysis of the print production in Brittany reveals an unexpected thematic diversity. The artisticprint on sheet, collections or illustrated albums is analysed from a stylistic and iconographic point of view.Finally, the study of useful lithography and the tin-box will bring this chapter to a close.Print trade which formsthe last link in the production chain is recounted through its merchants, a trade being transformed throughout XIXcentury, door-to-door and casual sellers. Lastly, the topic of the diffusion of print in Brittany is put forward asbeing the market place of Breton lithography within a national and international network
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Hauser, Hubert [Verfasser], and Holger [Akademischer Betreuer] Reinecke. "Nanoimprint lithography for solar cell texturisation = Nanoimprint Lithographie fuer die Solarzellentexturierung." Freiburg : Universität, 2013. http://d-nb.info/1123476160/34.
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Caillau, Mathieu. "Nanotechnologie verte : des polymères de la biomasse comme résines éco-efficientes pour la lithographie." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEC037/document.
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La lithographie est une étape clé de micro/nanotechnologie pour la fabrication de composants utilisés dans les domaines de la microéléctronique, de l’électronique flexible, de la photonique, du photovoltaïque, de la microfluidique... Cette étape de lithographie nécessite l’utilisation d’une résine inscriptible servant de masque temporaire permettant le transfert de motifs dans le matériau sous-jacent par gravure ou par déposition de nouveaux matériaux. La lithographie fait appel à des résines organiques mais aussi à des solvants organiques et des produits chimiques corrosifs et nocifs, ce qui va à l’encontre des problématiques environnementales et qui engendre des coûts supplémentaires liés à la gestion des risques et des déchets. De plus le contexte réglementaire (REACh ou US pollution act) évolue vers une plus grande protection de l’environnement et de la santé humaine et encourage l’utilisation de produits alternatifs. Dans ce contexte, mon projet de thèse visait à développer une résine biosourcée, non modifiée par des procédés de chimie de synthèse et développable dans l’eau. Cette résine devait être compatible avec les instruments de lithographies conventionnelles. Lors de ce travail, il a été démontré que le chitosane était une résine de tonalité positive permettant la réalisation d’un procédé complet de lithographie/gravure avec uniquement de l’eau comme solvant, sans modification du chitosane et sans l’utilisation de masque additionnel. Des motifs de 50 nm ont été obtenu dans la silice après lithographie électronique et gravure plasma et des motifs de 0.5 à 0.3 μm après photolithographie et gravure. Lithography is a key step in micro / nanotechnology with applications in the fields of microelectronics, flexible electronics, photonics, photovoltaics, microfluidics and biomedical. This lithography step requires the use of a writable resist to act as a temporary mask for transferring patterns in the underlying material by etching or deposition. Nowadays, lithography uses synthetic organic resin, organic solvents and hazardous chemicals which is contrary to environmental issues and generates additional costs associated with risk and waste management. Furthermore, regulation rules (REACh, US pollution act) tend to move toward the protection of human health and the environment from the risks that can be posed by chemicals and promote alternative chemicals. In this context, this PhD work aimed at replacing conventional synthetic organic resist with a biopolymer. This biopolymer will not be modified by synthetic organic chemistry, will be compatible with conventional lithography instruments and it should be developable in water. It was demonstrated that chitosan was a positive tone resist allowing accomplishing a complete lithography-etching process. The whole process was performed in aqueous solution without the use of hazardous chemicals. 50 nm features were obtained after ebeam lithography/plasma etching into a silica layer without the use of an additional masking layer. 0.3-0.5 μm feature were obtained using photolithography
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Kadiri, Hind. "Auto-organisation assistée pour la nanoimpression à grande échelle et surfaces optiques multifonctionnelles." Thesis, Troyes, 2018. http://www.theses.fr/2018TROY0001.
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La nanostructuration de surface à grande échelle est un enjeu majeur des nanotechnologies et conditionne les réponses qu’elles peuvent apporter à divers défis sociétaux (santé, énergie et environnement). Il est cependant nécessaire de développer des techniques de structuration complémentaires ou alternatives simples et moins couteuses comparées à celles utilisées en microélectronique. La lithographie par nano-impression (NIL) apparait de plus en plus comme la solution pour nano-structurer des surfaces ou couches minces dans le but de donner aux matériaux de nouvelles fonctionnalités. Si elle est compatible « grande surface », la difficulté est reportée sur la fabrication des outillages pour la mettre en œuvre.L’objectif de cette thèse CIFRE en collaboration avec l'entreprise SILSEF était de développer une technologie originale de fabrication de moules nanométriques de grande taille avec comme difficulté majeure de réaliser des structurations sur de grandes surfaces et à bas coût.Deux objectifs scientifiques ont été poursuivis et atteints : 1) Développer la fabrication de moules à grande échelle (20x20 cm2) avec une gamme de structures simples et complexes. Ces structures ont été réalisées en combinant trois techniques : la lithographie colloïdale, la gravure plasma et/ou la technique d’évaporation. 2) Valider directement ou indirectement les moules pour la nanoimpression. Trois applications ont été adressées, l’extraction de photons dans des cristaux scintillateurs, le traitement antireflet (vis-IR) et la mouillabilité dans un contexte de surfaces optiques multifonctionnellesLarge scale nanostructuring is one of the major issues in nanotechnology and a bottleneck for addressing numerous societal issues (health, energy and environment). However, conventional lithographic methods used in microelectronics are becoming extremely expensive and complex especially when large scale nanostructuring is necessary. Therefore alternative cost-effective and easy to use nanolithography methods need to be developed.NanoImprint Lithography (NIL) is a very powerful method for fast and large scale nanostructuring provided the molds are available. In this study in collaboration with SILSEF, we developed a new and original nanopatterning technology at large scale and at low cost compared to other lithographic methods.Two scientific goals were tackeld: 1) development of a new method for manufacturing molds with different sizes of simple and complex structures and at large scale (20x20 cm2). Molds were obtained by using colloidal lithography combined with Reactive Ion Etching (RIE) and/or physical vapor deposition. 2) direct and indirect functional validations by self-organization for micro / meso and nanoimprint. Three applications have been addressed; enhanced light extraction efficiency of scintillating crystals, antireflection (vis and IR) and wettability in a context of multifunctional optical surfaces
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Mehrotra, Prateek. "High Aspect Ratio Lithographic Imaging at Ultra-high Numerical Apertures: Evanescent Interference Lithography with Resonant Reflector Underlayers." Thesis, University of Canterbury. Electrical and Computer Engineering, 2012. http://hdl.handle.net/10092/6935.
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A near-field technique known as evanescent interferometric lithography allows for high resolution imaging. However its primary limitation is that the image exponentially decays within the photoresist due to physical limits. This thesis aims to overcome this limitation and presents a method to considerably enhance the depth of focus of images created using evanescent interferometric lithography by using a material underlay beneath the photoresist.
A key enabler of this is the understanding that evanescent fields couple to surface states and operating within proximity of a resonance, the strength of the coupling allows for considerable energy extraction from the incident beam and redistribution of this energy in a photoresist cavity. This led to the analysis of the Fresnel equations, which suggested that such coupling was in fact the result of an enhanced reflectance that takes place at boundaries of carefully chosen materials. While it is known that metals and lossy dielectrics result in surface plasmon polaritons (SPP) and surface exciton polaritons (SEP) as conventional solutions to the Fresnel reflection equations for the TM polarization of light, there is no such naturally occurring surface state that allows evanescent wave enhancement with the TE polarization of light. Further investigation of the Fresnel reflection equations revealed both for TM and TE that in fact another solution exists that is but unconventional to enhance the reflectivity. This solution requires that one of the media have a negative loss. This is a new type of surface resonance that requires that one of the media be a gain medium; not one in the optical pumped sense but one that would naturally supply energy to a wave to make it grow. This new surface resonance is also a key result of this thesis. Clearly, however this is only a hypothetical solution as a real gain medium would violate the conservation of energy.
However, as it is only the reflectance of this gain medium that is useful for evanescent wave enhancement, in fact a multilayered stack consisting of naturally occurring materials is one way to achieve the desired reflectivity. This would of course be only an emulation of the reflectivity aspect of the gain medium. This multilayered stack is then an effective gain medium for the reflectivity purposes when imaging is carried out at a particular NA at a particular wavelength. This proposal is also a key idea of this thesis. At λ = 193 nm, this method was used to propose a feasible design to image high resolution structures, NA = 1.85 at an aspect ratio of ~3.2. To experimentally demonstrate the enhancements, a new type of solid immersion test bed, the solid immersion Lloyd's mirror interference lithography test-bed was constructed. High quality line and space patterns with a half-pitch of 55.5 nm were created using λ = 405 nm, corresponding to a NA of 1.824, that is well in the evanescent regime of light. Image depths of 33-40 nm were seen. Next, the evanescent image was coupled to an effective gain medium made up of a thin layer of hafnium oxide (HfO) upon silicon dioxide (SiO2). This resulted in a considerable depth enhancement, and 105 nm tall structures were imaged.
The work in this thesis details the construction of the solid immersion lithography test-bed, describes the implementation of the modeling tools, details the theory and analysis required to achieve the relevant solutions and understanding of the physical mechanism and finally experimentally demonstrates an enhancement that allows evanescent interferometric lithography beyond conventional limits.
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Lakcher, Amine. "Nouvelles perspectives de métrologie dimensionnelle par imagerie de microscope électronique pour le contrôle de la variabilité des procédés de fabrication des circuits intégrés." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT052/document.
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Dans les noeuds technologiques avancés ainsi que les technologies dérivées, des règles de dessin de plus en plus aggressives sont nécessaires. Cela conduit à une complexification des structures dans les circuits intégrés actuels. De telles structures posent un défi important aux procédés de fabrication, notamment les étapes dites de patterning que sont la lithographie et la gravure. Afin d'améliorer et d'optimiser ces structures, les designers se basent sur les règles et connaissances qu’ont les ingénieurs de leurs procédés. Ces règles ont besoin d'être alimentées par des informations dimensionnelles et structurelles de plus en plus complexes : configurations de type bord arrondi, distance entre deux bouts de lignes, rétrecissement de ligne, etc. La métrologie doit évoluer afin que les ingénieurs soient capables de mesurer et quantifier les dimensions des structures les plus complexes dans le but d'estimer la variabilité de leur procédé. Actuellement la variabilité est principalement estimée à partir de données issues du suivi en ligne de structures simples car elles sont les seules à garantir une mesure robuste et reproductible. Mais, elles peuvent difficilement être considérées comme représentatives du procédé ou du circuit. Utiliser la métrologie par CD-SEM pour mesurer des structures complexes de manière robuste est un défi technique. La création de recettes de mesures est complexe, nécessite un temps non négligeable et ne garantit pas une mesure stable. Cependant, une quantité importante d'informations est contenue dans l'image SEM. Les outils d'analyses fournis par les équipementiers permettent aujourd'hui d'extraire les contours SEM d'une structure présente dans l’image. Ainsi, le CD-SEM prend des images et la partie métrologie est réalisée hors ligne afin d'estimer la variabilité. Cette thèse vise à proposer aux ingénieurs de nouvelles possibilités de métrologie dimensionnelle afin de l’appliquer pour le contrôle des structures les plus complexes. Les contours SEM sont utilisés comme source d’information et exploités pour générer de nouvelles métriquesIn advanced technological nodes as well as derived technologies, aggressive design rules are needed. This leads to a complexity of structures in the current integrated circuits. Such structures pose a significant challenge to chip manufacturing processes, in particular patterning steps of lithography and etching. In order to improve and optimize these structures, designers need to rely on the rules and knowledge that engineers have about their processes. These rules need to be fed by complex dimensional and structural information: corner rounding, tip to tip distances, line end shortening, etc. Metrology must evolve so that engineers are able to measure and quantify the dimensions of the most complex structures in order to assess the process variability. Currently the variability is mainly quantified using data from the inline monitoring of simple structures as they are the only ones to guarantee a robust and reproducible measurement. But, they can hardly be considered as representative of the process or the circuit. Using CD-SEM metrology to measure complex structures in a robust way is a technical challenge. The creation of measurement recipes is complex, time consuming and does not guarantee a stable measurement. However, a significant amount of information is contained in the SEM image. The analysis tools provided by the equipment manufacturers allow to extract the SEM contours of a structure present in the image. Thus, the CD-SEM takes images and the metrology part is performed offline to estimate the variability.This thesis offers engineers new possibilities of dimensional metrology in order to apply it for process control of complex structures. SEM contours are used as a source of information and used to generate new metrics
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Bouanani, Shayma. "Vers l'industrialisation de l'auto-assemblage dirigé des copolymères à blocs : développement de procédés de lithographie compatibles avec les noeuds technologiques sub-10 nm pour des applications de type contacts." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAT053/document.
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La course à la compétitivité que se disputent les industriels du semi-conducteur implique d’augmenter le nombre de fonctionnalités par puce ainsi que de réduire leur coût unitaire, ce qui se traduit par une diminution continue de leur taille. Pour ce faire, le DSA (Directed Self-Assembly), ou auto-assemblage dirigé des copolymères à blocs associe les techniques de lithographie conventionnelle avec les propriétés d’organisation à l’échelle moléculaire des copolymères. Dans ce cadre, l’objectif global de cette thèse est d’évaluer le potentiel d’industrialisation du DSA par grapho-épitaxie pour des applications de type « shrink » et « multiplication » de contacts. Il s’agit en particulier de démontrer la capacité de cette technique à répondre au cahier des charges de l’ITRS en termes d’uniformité de CD, de désalignement et de taux de défauts. Une première étude concernant le « shrink de contact », basée sur l’impact des propriétés matériaux, d’affinité de surface et de tailles de guides permet de comprendre les mécanismes qui rentrent en jeu dans l’apparition de défauts d’assemblage. Une seconde partie de l’étude porte sur la multiplication de contact. Pour adresser cette application, deux types de guides ont été étudié : les guides elliptiques et les guides complexes dits « peanut ». L’étude de la fenêtre de procédé en termes de paramètres procédé comme le temps et la température de recuit, mais aussi de commensurabilité, a été menée. Une attention particulière a été portée sur l’impact de la variation du guide sur le pitch final obtenu en DSA, dont les données expérimentales ont été corrélées avec des résultats de simulation. Les critères de réussite sont basés sur les performances lithographiques qu’il faut juger à travers une métrologie de pointe. Le développement d’une métrologie spécifique pour mesurer l’erreur de placement des contacts ainsi que leur pitch a été conduiteThe competitiveness-chasing in which industrial manufactures are involved, leads to an exponential increase in the number of functionalities per chips, as well as reducing their unit cost, which results in a continuous decrease of their size. To achieve this, DSA (Directed Self-Assembly) of block copolymers, combines conventional lithography techniques with the molecular-scale organizational properties of copolymers. In this framework, the overall objective of this thesis is to evaluate the industrialization potential of the DSA process by graphoepitaxy for contact hole shrink and contact multiplication applications. In particular, it is necessary to demonstrate the ability of this technique to meet the ITRS specifications in terms of CD uniformity, misalignment and hole open yield. A first study on contact shrink, based on the impact of material properties, surface affinity and guiding feature size, allows us to understand the mechanisms involved in the appearance of defects. A second part of the study deals with contact multiplication. To address this application, two types of guides have been studied: elliptical guiding patterns and more complex ones called "peanut". The study of the process window in terms of process parameters such as annealing time and temperature, but also commensurability was conducted. Particular attention was paid to guide size variation and its impact on DSA final pitch. Experimental data from this study were correlated with simulations. The success criteria are based on the lithographic performances that must be judged through advanced metrology. The development of a specific metrology to measure the placement error of contacts as well as their pitch was conducted
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Armeanu, Ana. "Simulation électromagnétique utilisant une méthode modale de décomposition en ondelettes." Phd thesis, Université de Grenoble, 2011. http://tel.archives-ouvertes.fr/tel-00721767.
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La scattéromètrie requiert le calcul de la réponse optique de structures périodiques. Parmi les méthodes numériques de calcul électromagnétique de la diffraction par des réseaux, la méthode la plus couramment utilisée est la Méthode Modale de Fourier (FMM). Celle cis'avère peu efficace pour la caractérisation de structures très isolées ou très denses et peut même ne pas marcher du tout. L'objectif de cette thèse est de dépasser les limitations de la FMM. Nous restons dans le cadre des méthodes modales mais nous explorons de nouvelles voies en utilisant des bases de développement différentes qui ne présentent pas les inconvénients des bases de Fourier. Tout d'abord, nous avons introduit les fonctions B-spline qui sont le premier pas vers l'analyse multi-résolution avec les ondelettes splines. Nous avons formulé le problème de la diffraction par un réseau 1D comme un problème aux valeurs propres que nous avons résolu numériquement à l'aide de la méthode de Galerkin. Nous avons étudié en détail l'importance de la discrétisation par rapport aux discontinuités de la fonction permittivité. Ensuite, nous avons introduit les ondelettes et l'analyse à plusieurs niveaux de détails pour le problème de diffraction. La thèse contient une palette variée d'exemples numériques concernant des réseaux diélectriques et métalliques. Nous avons comparé soigneusement la convergence de nos méthodes avec celle d?autres méthodes, notamment avec la FMM. Nous avons montré que l'analyse multirésolution permet de traiter des cas pour lesquels la FMM échoue.
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Spaziani, Nicolas. "Détermination simultanée de la mise au point et de la dose d'un équipement de micro-lithographie optique." Thesis, Grenoble, 2012. http://www.theses.fr/2012GRENT125/document.
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Les dimensions critiques des circuits intégrés diminuent continuellement au coursdes ans selon la loi de Moore. Les valeurs typiques sont aujourd’hui de 28nm,et seront de 22nm dans 18 mois. La photo-lithographie optique demeure encore latechnique la plus économique pour la production de masse. L’ouverture numériquedes objectifs atteint 1.30, grâce à l’introduction d’eau entre la lentille et la plaquette.La conséquence directe de ces grandes ouvertures est la réduction de la profondeurde champs de l’ordre d’une centaine de nanomètres. Le procédé photo-lithographiqueperdant de la latitude, le contrôle dimensionnel intra-cellule devient une nécessité.La variation dimensionnelle provient au premier ordre à la fois de la variation duplan focal dans le champ image, et aussi de la non uniformité de l’illumination duréticule. Pour contrôler cette variation, une boucle de régulation a été mise en placepour ajuster uniquement l’énergie des lots de production. On corrige ainsi de fait unmauvais focus par une compensation en énergie.Pour ne pas altérer l’image dans la résine, il est important de pouvoir dissocierles deux effets et adresser les causes de dégradation de l’image séparément. Le sujetde cette thèse est précisément de trouver un moyen de décorréler les deux paramètresaffectant l’uniformité de la dimension critique. L’idée principale est de trouver à lafois les motifs et les modèles théoriques pouvant conduire à discriminer des imagesselon leur sensibilité, soit au focus, soit à la doseFollowing the ITRS roadmap, the critical dimension of the circuits are continuouslynarrowing. Optical Lithography still remains the cheapest way forintegrated circuits mass production. If the resists properties and the exposure wavelengthreduction had an important contribution to this result, the lens numericalaperture increase had a decisive impact. The numerical aperture is currently reaching1,30 thanks to the usage of water as immersion fluid between the lens andthe wafer. Future lens are targeting in a near future a 1,70 numerical aperture withimmersion fluids at higher refractive index. A direct consequence of these wider numericalaperture’s is the reduction of the depth of focus to few tens of nanometers,reducing the process windows and then the integrated circuits manufacturability. Inaddition the pure numerical aperture effect on focus, off axis illumination is leadingto amplify the reticle critical dimension variations, and the intrafield focus controlbecomes more and more crucial.The last scanner generation provides some tools to adjust the intrafield energy.As the two effects appear to compensate each of them critical dimension variation,it becomes very important to be able to dissociate the effect of one from the otherin order to select the most efficient mean to get the greater process windows. Moreover, the average value compensations must feed accurately the Run to Run feedback loop for the next exposed wafers.The purpose of this thesis is to find a way to un-correlate the various parametersaffecting the critical dimension uniformity. Some researchers tried to design specificfeatures whose shape modifications due to focus offset could be detected as an overlayerror measured by the appropriate tool, but the limitations seem to be actuallyreached. New tools, as scatterometers, could provide a more precise information.The desire output of this thesis would be to provide a methodology to allow an inline intrafield focus follow up for the future technologies at 20nm half pitch
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Alleaume, Clovis. "Etude de la modification de la source dans l'utilisation de la méthode de co-optimisation source masque en lithographie optique : mise en oeuvre et applications." Thesis, Saint-Etienne, 2014. http://www.theses.fr/2014STET4007/document.
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Réalisée entre décembre 2009 et décembre 2012 au sein de STMicroelectronics Crolles dans l’équipe RET (résolution enhancement techniques), et en partenariat avec le laboratoire Hubert Curien Saint Etienne de l’université de Lyon, cette thèse s’intitule "Impact de la modification de la source dans l’utilisation de la méthode de cooptimisation masque source en lithographie optique, et application au nœud technologique 20 nm". Durant cette étude, nous avons pu étudier la technique d’optimisation de la source optique en lithographie, appelée généralement SMO afin de l’appliquer aux problématiques de l’industrie. Une première partie du manuscrit traitant de la lithographie optique permettra de mieux comprendre les problématiques liées à cette étude, en présentant les techniques utilisées. En effet, afin de permettre à la lithographie optique de continuer la miniaturisation des composants de microélectronique, il est nécessaire d’optimiser au maximum de nombreux éléments de la lithographie. La forme de la source optique utilisée n’échappe pas à cette règle et l’utilisation de sources étendues, hors axe et plus ou moins complexe permet aujourd’hui la production des technologies de pointes. Une seconde partie s’attardera plus sur l’optimisation de la source à proprement parler. Dans un premier temps, la théorie de la diffraction sera étudiée afin de permettre une meilleure compréhension du problème. Des simulations et des mesures SEM ou microscope électronique à balayage seront présentées pour montrer l’efficacité de la méthode SMO, de l’anglais "Source Mask Optimization". Cette étude donnant lieu au développement de nouvelles méthodes rapides et innovantes d’optimisation de la source, l’étude prendra soin de présenter des résultats obtenus dans le cadre de cette thèse. Ainsi, la méthode de SMO interne basée sur le phénomène de diffraction et créée durant cette thèse sera présentée dans cette étude et les résultats en découlant seront étudiés. L’application de l’optimisation de la source à des problématiques industrielles sera également présentée à travers différentes applications des solutions proposées. Finalement, un legs de connaissance nécessaire sera effectué par la présentation des différents outils développés durant cette thèse. Une troisième partie concernera l’étude de l’outil Flexray permettant la génération des sources optimisées. La thèse ayant donné lieu à une nouvelle technique de décomposition de la source en polynôme de Zernike, cette techniques sera présentée ici. Elle sera ensuite utilisée pour modéliser la dégradation d’une source, ainsi que pour corréler la différence de source avec la divergence du modèle empirique de simulation. L’étude des sources a été mise en place suivant un aspect industrielle, afin de contrôler l’évolution du scanner de façon rapide. De plus, des simulations peuvent être utilisées pour compléter cette étude. Finalement, une dernière partie traitera de la cooptimisation entre la source et différents éléments tels que le masque et la forme final du motif souhaité. En effet, si la forme initiale du motif souhaité joue un rôle important dans la définition de la source, il est possible de modifier cette dernière, ainsi que la forme du masque en lui appliquant un OPC afin d’obtenir de meilleurs résultats. Ces modifications seront étudiées durant le dernier chapitreConducted between December 2009 and December 2012 within the RET (resolution enhancement technology) team at STMicroelectronics Crolles and in partnership with Saint-Etienne laboratory Hubert Curien of the University of Lyon, this thesis entitled "Impact of changing the source while using the source mask optimization technique within optical lithography, and application to 20 nm technology node. ". In this thesis, Alleaume Clovis studied the optimization of the source used in optical lithography, technique usually called SMO (for source mask optimization) and applied the technique to the industry through several problems. The first part of the manuscript describe the optical lithography generalities, in order to allow a better understanding of the issues and the techniques used in this study. Indeed, to allow optical lithography to continue the miniaturization of microelectronic components, it is necessary to optimize many aspects of the lithography. The shape of the light source used is no exception to this rule and the use of extended sources, off-axis and more or less complex now enables the production of advanced technologies. The second part will then focus on the source modification and optimization. In a first step, the diffraction theory will be examined to demonstrate the theoretical interest of the thesis, and to allow a better understanding of the problem. Simulations and SEM measurements will be presented to show the effectiveness of SMO method. As this study gave birth to several innovative source optimization techniques, they will be presented. Thus, the method of internal SMO based on the phenomenon of diffraction and created during this thesis will be presented and the results would be studied. The application of the source optimization to industrial problems will also be presented through different applications. Finally, a legacy of knowledge will be done by presenting the different tools developed during this thesis. A third part will deal with the study of tool which generate the source inside the scanner allowing the use of optimized and complex sources. The thesis has given rise to a new source decomposition technique using Zernike polynomial. It will be used in this study to model the degradation of a source, and for correlating the impact of a source modification due to SMO technique on the empirical model stability. The study of sources has been implemented according to industrial aspect to monitor the scanner with a quick method. In addition to the Zernike decomposition method, simulations can be used to complete this study. The forth chapter of this study will talk about this implementation. Finally, the last part of the study will talk about the co-optimization of the source with several elements, such as the mask OPC and the final shape of the desired pattern. Indeed, if the initial shape of the desired pattern plays an important role in defining the source, it is possible to modify the latter design shape, as well as the shape of the mask in order to optimize both the source and the target shape. These changes will be discussed in the last chapter
Books on the topic "Lithographer"
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C, Martin Joseph. Lithographer. [Pensacola, Fla.]: Naval Education and Training, Program Management Support Activity, 1987.
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Harris, Gėnė E. Joseph Pennell, illustrator, lithographer, etcher. Chadds Ford, Pa: Brandywine Conservancy, 1986.
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Murray, Joan. Barry Smylie: Lithographer [exhibition catalogue]. Oshawa, Ont: Robert McLaughlin Gallery, 1988.
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Erni, Hans. Erni Lithograph: Werkverzeichnis der Lithographien = Catalogue raisonné of the lithographs. Zürich: ABC Verlag, 1993.
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Pierini, Benedetta. Una famiglia di litografi a Perugia: Da Girolamo a Brenno Tilli tra Otto e Novecento. Perugia: Futura, 2004.
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1853-1937, Tilli Girolamo, Tilli Brenno 1911-1990, and Rossi Raffaele 1923-, eds. Una famiglia di litografi a Perugia: Da Girolamo a Brenno Tilli tra Otto e Novecento. Perugia: Futura, 2004.
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Delteil, Loys. Honoré Daumier: The early lithographs catalogue raisonne : l'oeuvre lithographie 1830-1837. San Francisco: Alan Wofsy Fine Arts, 2005.
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1968-, Rogan Clare I., and Arthur M. Sackler Museum, eds. Touchstone: 200 years of artists' lithographs. Cambridge, Mass: Harvard University Art Museums, 1998.
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Booksellers, Ken Spelman. The complete artist: Instruction books on the practice of drawing and painting, technical manuals for the engraver and lithographer, colour theory, perspective. York: Ken Spelman Booksellers, 1989.
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Tārīkh-i chāp-i sangī-i Iṣfahān. Tihrān: Kitābkhānah, Mūzih va Markaz-i Asnād-i Majlis-i Shūrā-yi Islāmī, 2011.
Find full textBook chapters on the topic "Lithographer"
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Widmann, Dietrich, Hermann Mader, and Hans Friedrich. "Lithographie." In Halbleiter-Elektronik, 115–88. Berlin, Heidelberg: Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-97059-7_5.
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Widmann, Dietrich, Hermann Mader, and Hans Friedrich. "Lithographie." In Halbleiter-Elektronik, 101–80. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-61415-6_4.
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Gooch, Jan W. "Lithographed Paper." In Encyclopedic Dictionary of Polymers, 431. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_6975.
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Bandelier, Philippe, Anne-Laure Charley, and Alexandre Lagrange. "Photolithography." In Lithography, 1–40. Hoboken, NJ USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118557662.ch1.
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Besacier, Maxime, Christophe Constancias, and Jean-Yves Robic. "Extreme Ultraviolet Lithography." In Lithography, 41–100. Hoboken, NJ USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118557662.ch2.
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Constancias, Christophe, Stefan Landis, Serdar Manakli, Luc Martin, Laurent Pain, and David Rio. "Electron Beam Lithography." In Lithography, 101–82. Hoboken, NJ USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118557662.ch3.
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Gierak, Jacques. "Focused Ion Beam Direct-Writing." In Lithography, 183–232. Hoboken, NJ USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118557662.ch4.
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Hawkes, Peter. "Charged Particle Optics." In Lithography, 233–74. Hoboken, NJ USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118557662.ch5.
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Jouve, Amandine, Michael May, Isabelle Servin, and Julia Simon. "Lithography resists." In Lithography, 275–368. Hoboken, NJ USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118557662.ch6.
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Landis, Stefan. "Front Matter." In Lithography, i—xxvi. Hoboken, NJ USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118557662.fmatter.
Full textConference papers on the topic "Lithographer"
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Kai Wang, Yixu Song, Zehong Yang, Yannan Zhao, and Jiaxin Wang. "Design and implementation of wafer transporting system for photo lithographer." In 2008 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems. IEEE, 2008. http://dx.doi.org/10.1109/nems.2008.4484340.
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Balan, Nikita, Vladimir Ivanov, Alexander Pankratov, and Ekaterina Kharchenko. "METHOD FOR CALCULATION OF MASK SPECIFICATION CONTRIBUTION TO LITHOGRAPHIC BUDGETS." In International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis. LLC MAKS Press, 2020. http://dx.doi.org/10.29003/m1653.silicon-2020/372-374.
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In this work we consider the contribution of tolerances on the mask pattern quality to the error budgets of lithographic operations. A method for developing a photomask specification based on the lithography modeling is proposed.
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McCallum, Martin. "Some lithographic limits of back end lithography." In Microelectronic and MEMS Technologies, edited by Chris A. Mack and Tom Stevenson. SPIE, 2001. http://dx.doi.org/10.1117/12.425217.
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Jenness, Nathan J., Daniel G. Cole, and Robert L. Clark. "Three-Dimensional Holographic Lithography Using a Spatial Light Modulator." In ASME 2008 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2008. http://dx.doi.org/10.1115/detc2008-50067.
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In this paper we present a lithographic process with the ability to automatically translate and arbitrarily position three-dimensional (3D) computer-generated patterns through the use of phase holograms. This method, dynamic maskless holographic lithography (DMHL), advances current photo-directed patterning and functionalization capabilities by expanding the capability to manipulate light in real-time without the use of expensive fixed masks. The system could be used for large-scale parallel manufacturing over larger areas and for point specific serial fabrication, interrogation, and metrology. The use of coherent illumination allows for the direct creation of 3D patterns of light for lithography as opposed to the mechanical stage, layer-by-layer 3D fabrication approach typical of direct-write systems. Extrinsic control over interfacial properties will provide a method for addressing aqueous phase bionanotechnolgy experimental systems in which detection, separation, transport, and handling are vital.
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Marrian, Christie R., Elizabeth A. Dobisz, and John A. Dagata. "Scanning tunneling microscope lithography: a viable lithographic technology?" In Micro - DL Tentative, edited by Martin C. Peckerar. SPIE, 1992. http://dx.doi.org/10.1117/12.136012.
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Voelkel, Reinhard, Uwe Vogler, Arianna Bramati, Andreas Erdmann, Nezih Ünal, Ulrich Hofmann, Marc Hennemeyer, Ralph Zoberbier, David Nguyen, and Juergen Brugger. "Lithographic process window optimization for mask aligner proximity lithography." In SPIE Advanced Lithography, edited by Kafai Lai and Andreas Erdmann. SPIE, 2014. http://dx.doi.org/10.1117/12.2046332.
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Pham, Duc-Cuong, R. Arvind Singh, Hoon Eui Jeong, Kahp Y. Suh, and Eui-Sung Yoon. "The Effect of Channelling a Polymeric Surface on Its Adhesion and Friction Characteristics." In ASME/STLE 2007 International Joint Tribology Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ijtc2007-44137.
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In recent years, a new approach towards enhancing tribological properties at small-scale by the fabrication of nano/micro-scale polymeric patterns using soft lithography has gained popularity. These patterned surfaces provide promising solutions to the tribological issues in small-scale devices such as micro/nano-electromechanical systems (MEMS/NEMS). In the present study, we investigate the nano-scale tribological properties of a novel topography, namely submicrometer-scale channels fabricated on thin polymeric films using a soft lithographic technique. Results show that these surfaces have superior nano-tribological properties, as they reduce adhesion and friction forces to a significant extent when compared to silicon wafer and non-patterned polymeric thin film.
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Johannes, Matthew S., Daniel G. Cole, and Robert L. Clark. "The Atomic Force Microscope as a Nanoscale Stereo Lithography Machine." In ASME 2007 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/detc2007-35348.
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Atomic force microscope (AFM) based anodization nanolithography on semiconducting layers is a useful tool for nanoscale fabrication. A custom AFM patterning technique has been created that couples CAD with the lithographic capabilities of the AFM. Designed nanostructures to be deposited on a silicon substrate are rendered as a three-dimensional model using CAD. AFM based anodization nanolithography is then used to replicate the features at the nanoscale using automated voltage bias and humidity modulation as prescribed by the model and dictated by the system. The work presented outlines the advantages and limitations when three-dimensional modeling is combined with nanoscale lithography using an AFM.
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Schurz, Daniel, and Warren W. Flack. "Performance of a Dual Side Substrate Metrology System for Micromachining Lithography." In ASME 2004 3rd Integrated Nanosystems Conference. ASMEDC, 2004. http://dx.doi.org/10.1115/nano2004-46040.
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Advances in micromachining (MEMS) applications such as optical components, inertial and pressure sensors, fluidic pumps and radio frequency (RF) devices are driving lithographic requirements for tighter registration, improved pattern resolution and improved process control on both sides of the substrate. Consequently, there is a similar increase in demand for advanced metrology tools capable of measuring the Dual Side Alignment (DSA) performance of the lithography systems. There are a number of requirements for an advanced DSA metrology tool. First, the system should be capable of measuring points over the entire area of the wafer rather than a narrow area near the lithography alignment targets. Secondly, the system should be capable of measuring a variety of different substrate types and thicknesses. Finally, it should be able to measure substrates containing opaque deposited films such as metals. In this paper, the operation and performance of a new DSA metrology tool is discussed. The UltraMet 100 offers DSA registration measurement at greater than 90% of a wafer’s surface area, providing a true picture of a lithography tool’s alignment performance and registration yield across the wafer. The system architecture is discussed including the use of top and bottom cameras and the pattern recognition system. Experimental data is shown for tool performance in terms of repeatability and reproducibility over time. The requirements for tool accuracy and methods to establish accuracy to a NIST traceable standard are also discussed.
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Yasar, Ozlem, Michael Dinh, Shih-Feng Lan, and Binil Starly. "Fabrication of Micropatterned Hydrogels Using Maskless Photopolymerization for Tissue Engineering Applications." In ASME 2008 Summer Bioengineering Conference. American Society of Mechanical Engineers, 2008. http://dx.doi.org/10.1115/sbc2008-192377.
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The fabrication of tissue scaffolds/constructs has seen tremendous advancements over the past decade primarily due to the application of layered manufacturing based technologies from the rapid prototyping industry. Molding, printing and deposition technologies have enabled researchers to spatially control scaffold micro and macro structural features through the use of soft lithography solid freeform fabrication. These techniques have produced patterned scaffolds with desired mechanical and biological properties to mimic the natural tissue microenvironment. Soft lithographic techniques have produced feature sizes in ranges of 20μm and above but have limited 3D capability. Solid freeform fabrication technologies enable the production of complex 3D scaffolds due to its CAD integration but are generally limited to a 100μm feature resolutions.
Reports on the topic "Lithographer"
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Park, Jea. Lithography Hotspot Detection. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.5665.
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Lewis, Aaron. Wavelength Independent Optical Lithography. Fort Belvoir, VA: Defense Technical Information Center, June 1986. http://dx.doi.org/10.21236/ada171935.
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Ji, Qing. Maskless, resistless ion beam lithography. Office of Scientific and Technical Information (OSTI), January 2003. http://dx.doi.org/10.2172/809301.
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Browning, R., and R. F. Pease. Low Voltage Electron Beam Lithography. Fort Belvoir, VA: Defense Technical Information Center, April 1994. http://dx.doi.org/10.21236/ada281046.
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NAVAL RESEARCH LAB WASHINGTON DC. Low Voltage Electron Beam Lithography. Fort Belvoir, VA: Defense Technical Information Center, March 1995. http://dx.doi.org/10.21236/ada293396.
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Zotter, Beth. Holographic Lithography for Industrial Nanomanufacturing. Office of Scientific and Technical Information (OSTI), March 2020. http://dx.doi.org/10.2172/1614764.
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Browning, R., and R. F. Pease. Low Voltage Electron Beam Lithography. Fort Belvoir, VA: Defense Technical Information Center, October 1992. http://dx.doi.org/10.21236/ada263360.
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Browning, R., and R. F. Pease. Low Voltage Electron Beam Lithography. Fort Belvoir, VA: Defense Technical Information Center, February 1993. http://dx.doi.org/10.21236/ada265358.
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Cramer, Corson, Alicia Raftery, and Andrew Nelson. Lithography-based Ceramics Manufacturing Technologies. Office of Scientific and Technical Information (OSTI), September 2019. http://dx.doi.org/10.2172/1659632.
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Liu, Weidong. Low Voltage Electron Beam Lithography. Fort Belvoir, VA: Defense Technical Information Center, June 1995. http://dx.doi.org/10.21236/ada296625.
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