Journal articles: 'Lithographer'

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Meijer, Rob, Peter Thomson, and Lysbeth Croiset van Uchelen-Brouwer. "The History of the Lithographie Royale, 1818-25." Quaerendo 31, no. 4 (2001): 281–306. http://dx.doi.org/10.1163/157006901x00173.

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AbstractFrom 1816 lithographic businesses began to develop in Western Europe. Use was made of a printing technique, lithography - based on the repellent working of water and fat - which was catching on especially in Germany and France. The Low Countries remained behind: early in 1818 only small lithographic printing offices were to be found in Brussels, Amsterdam and Rotterdam. At about that time the Frenchman MJ.V. Duval de Mercourt, calling himself an architect, presented himself in the Netherlands. Stimulated by the Dutch envoy at the court of Paris, Baron Fagel, he requested King William I to be permitted to found lithographical offices in The Hague and Brussels and to call himself Royal Lithographer. This was permitted by Royal Decree of 16 July 1818. Added to it was, highly unusually, that the establishment of Duval was greeted with approval, and that the hope was expressed that he might succeed in his attempts. The background of all this was the industrialisation policy that was pursued more in particular by the king himself. Indeed, Duval set about his business with great expectations and fervour. Probably he officially opened a - for Dutch standards - large lithographic printing office which consisted of at least two presses, which he called the Lithographie Royale'. He focused in particular on government commissions and especially on making autographs of written documents which up to that time had to be copied by hand. This technique, where writing was done with fat ink on prepared paper, after which the text was transferred to the stone and printed, seemed a godsend indeed. This autographic technique also had the king's interest: for, would it not be possible to introduce it and subsequently discharge clerks at the ministries? The future seemed to favour Duval, but alas, reality was different. It appeared that government as well as private institutions would provide him with hardly any work, possibly because of his high prices. It is also remarkable that some ministries did not want to have anything to do with this new printing method. After half a year he was already threatened with financial downfall, also through a loss he had personally suffered and the downward turn of the Dutch economy. The king then intervened with a number of measures in favour of Duval, of which the most important was that he was allowed to work for the Ministry of Water Management. An attempt was also made to accommodate him at the Algemeene Landsdrukkerij in The Hague, a government printing office with a monopoly on all government printed matter. The directors, however, confirmed letterpress printers, did not believe in this new printing technique which, according to them, could have no future because it would always be more expensive than their own beautiful printing. Because the locations of the ministries were changing between The Hague and Brussels about every half year, Duval was forced to follow the Ministry of Water Management to Brussels and to found a lithographic printing office there as well. Although he was supplied with more work there, he appeared to be at the end of his tether half way through 1819 due to a lack of financial resources. His financial situation was such that he was even refused a government advance because it was feared that he would not be able to reimburse it. Thereafter he was forced to make a disadvantageous contract with a private person, after which he left for The Hague, a destitute man. Although work from the Ministry of Water Management was also given to him there, things continued to go downhill for him. He now also lost his premises in The Hague so that he could no longer accept commissions. True, some time later a new place was found, but he had to agree that his co-worker, D. Abrahams, was to be appointed as his partner. Halfway through 1820 there arrived at last a reply to the many petitons and pleas he had sent to the king. This was, however, negative, because it was feared that a financial contribution from the government might slow down the downfall of his enterprise, but would not prevent it. Even damages were not granted because he was supposed to have given a false impression of things. He then left first to go to Brussels and later on to France, leaving his lithographic printing office in The Hague to Abrahams. The latter succeeded in getting the enterprise off to a good start within a few years, notably by making lithographs and trading in lithographs and sheet music, the main aim of the business. From about 1823 the number of commissions for lithographs increased, with a marked improvement in the quality of his work. This resulted in an honourable mention in the second industry exhibition held in the Netherlands in the summer of 1825. During this exhibition he was appointed first lithographer at the Algemeene Landsdrukkerij! This was because the king had intervened anew in the field of lithography and persevered against the advice of his minister in having an autographic printing office there, an office that was to be closed in 1832 due to lack of work and with great losses. The Lithographic Royale subsequently stopped its activities after Abrahams had received a compensation in his salary for it. Finally, the lithographic activities in The Hague were continued by his brother, A.M. Abrahams, on a modest scale.

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Mellby, Julie. "Victor Prevost: Painter, Lithographer, Photographer." History of Photography 35, no. 3 (August 2011): 221–39. http://dx.doi.org/10.1080/03087298.2011.581419.

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Volgunov, D. V., A. E. Pestov, N. N. Salashchenko, M. N. Toropov, and N. I. Chkhalo. "Nanostructure formation on an EUV lithographer stand: First results." Bulletin of the Russian Academy of Sciences: Physics 77, no. 1 (January 2013): 1–5. http://dx.doi.org/10.3103/s1062873813010218.

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Vandаlovskyi, V. "Artistic and technical features of the lithographic manner mixed technique." Research and methodological works of the National Academy of Visual Arts and Architecture, no. 27 (February 27, 2019): 92–98. http://dx.doi.org/10.33838/naoma.27.2018.92-98.

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Nowadays the problem of improving the artistic and technical features of the lithographic manner of mixed technique has matured already. The author of this study expanded and supplemented the ways of combining a variety of manners of lithographic techniques through practical experiments to achieve positive results in this area. Mixed technique is one of the types of lithography, in which a certain combination of lithographic manners engraving on stone with pencil, blurring ink, root paper, color lithography is used on one stone depending on the intent of the author, his artistic taste and possession of a large number of techniques in lithography, such as shading, sketching, blurring ink, pen, prints of cloth and other textures and the like. Lithography got the greatest spread in France, the gifted artists on stone included T. Géricault, Antoine-Jean Gros, Claude Joseph Vernet, Nicolas-Toussaint Charlet, O. Raffet, Ferdinand Victor Eugène Delacroix, Louis-Léopold Boilly, Paul Gavarni, Henri Grévedon, A. Toulouse-Lautrec and many others. Famous Ukrainian artists, namely M. Deregus, M. Popov, S. Yakutovich, and others worked in lithographic mixed technique. In particular, N. Popov in the creation of graphic works used the author's manner of execution of lithographs – drawing with acid. In artistic creativity to the main lithographic technique artists add elements of other graphic techniques: combine with etching, woodcut, monotype and other techniques. The program of teaching lithography in National Academy of Fine Arts and Architecture in methodical terms is designed so that the student of the specialty "Free graphics, design and illustration of the book", mastering lithographic technique and getting acquainted with her manners, could be able to do on this basis a mixed lithographic technique. Mixed technique is the final task, in which the student is given the opportunity to choose and combine the manners of lithography. Senior students improve their knowledge in the field of technical and technological capabilities of lithography. Due to the rich, original technique lithography has unlimited visual possibilities. It met the requirements of different artists, despite the difference in styles, language and artistic techniques. Lithography makes it possible to solve the composition in black and white, dashed, tonal, color techniques through the use of different manners.

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ΣΚΛΑΒΕΝΙΤΗΣ, ΤΡΙΑΝΤΑΦΥΛΛΟΣ Ε. "ΤΥΧΕΣ ΤΗΣ ΑΠΟ 5-9-1816 ΕΠΙΣΤΟΛΗΣ TOΥ Α. ΚΟΡΑΗ (ΜΟΛΙΕΡΟΣ, ΚΟΚΚΙΝΑΚΗΣ, ΣΚΥΛΙΤΣΗΣ ΚΑΙ ΛΙΘΟΓΡΑΦΟΣ)." Μνήμων 26 (January 1, 2004): 227. http://dx.doi.org/10.12681/mnimon.841.

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<p>Triantaphyllos E. Sklavenitis, The Fate of Korais's Letter of 5 September 1816. (Molière, Kokkinakis, Skylitsis and the lithographer)</p><p>In response to Adamantios Korais's suggestion that Tartuffe should be translated into Modern Greek, Konstantinos Kokkinakis translated the play, had it printed in 1815 and sent a copy to Korais for his comments. Korais set out his opinion on the translation, with critical comments, in a long letter to Kokkinakis dated 5 September 1816. In 1851 Ioannis Isidoridis Skylitsis published his own translation of Tartuffe in Smyrna and after twenty years, in 1871, republished it in a reviewed form. Both in his prefatory notes and in his translation, Skylitsis repudiated Korais's condemnation of rhyming verse, and he also rejected Kokkinakis's decision to adhere as closely as possible to Moliere's words: instead, he followed the example of Konstantinos Oikonomos, who had made a free translation of L'Avare in 1816. However, in 1871's edition Skylitsis put as a frontispiece a fascimile lithograph of 1816's letter in honour of Korais's opinions despite the fact that he disagreed with them.</p>

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Blum, Ann. ""A Better Style of Art": The Illustrations of the Paleontology of New York." Earth Sciences History 6, no. 1 (January 1, 1987): 72–85. http://dx.doi.org/10.17704/eshi.6.1.5635758n4521384g.

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James Hall, like other authors and editors of 19th-century American state and federal surveys, learned first hand that publishing illustrations was time-consuming, frustrating and expensive. But illustrations were indispensible, providing the graphic communication of morphology that justified the author's taxonomic decisions. That essential information, however, passed through the hands of an illustrator and either an engraver or lithographer before it reached the scientific audience that would test and judge it. Artists and printers, therefore, needed close supervision; plates required careful proofing and sometimes cancellation. Hall, like his colleagues, vastly underestimated the time and expense that his project would entail. The plates illustrating the Palaeontology reflected changes occurring in American science and printing. Over the decades spanned by the publication, picture printing techniques changed from craft to industry, and converted from engraving to lithography; so did the New York survey. Meanwhile, the scientific profession developed illustration conventions to which publications with professional intent increasingly conformed. These conventions combined standards of "accuracy" with issues of style to reflect both scientific activity and its social context. The early illustrations drawn by Mrs. Hall were no less "accurate" although clearly less polished than the collaborations between R.P. Whitfield and F.J. Swinton, or the later work of J.H. Emerton and E. Emmons, Jr. The artists and printers of the Palaeontology plates emulated and contributed to the emerging national style of zoological and paleontological illustration, and thus helped consolidate the "look" of American science.

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Kwon, B., and Jong H. Kim. "Importance of Molds for Nanoimprint Lithography: Hard, Soft, and Hybrid Molds." Journal of Nanoscience 2016 (June 22, 2016): 1–12. http://dx.doi.org/10.1155/2016/6571297.

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Nanoimprint lithography has attracted considerable attention in academic and industrial fields as one of the most prominent lithographic techniques for the fabrication of the nanoscale devices. Effectively controllable shapes of fabricated elements, extremely high resolution, and cost-effectiveness of this especial lithographic system have shown unlimited potential to be utilized for practical applications. In the past decade, many different lithographic techniques have been developed such as electron beam lithography, photolithography, and nanoimprint lithography. Among them, nanoimprint lithography has proven to have not only various advantages that other lithographic techniques have but also potential to minimize the limitations of current lithographic techniques. In this review, we summarize current lithography techniques and, furthermore, investigate the nanoimprint lithography in detail in particular focusing on the types of molds. Nanoimprint lithography can be categorized into three different techniques (hard-mold, soft-mold, and hybrid nanoimprint) depending upon the molds for imprint with different advantages and disadvantages. With numerous studies and improvements, nanoimprint lithography has shown great potential which maximizes its effectiveness in patterning by minimizing its limitations. This technique will surely be the next generation lithographic technique which will open the new paradigm for the patterning and fabrication in nanoscale devices in industry.

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WATT, F., A. A. BETTIOL, J. A. VAN KAN, E. J. TEO, and M. B. H. BREESE. "ION BEAM LITHOGRAPHY AND NANOFABRICATION: A REVIEW." International Journal of Nanoscience 04, no. 03 (June 2005): 269–86. http://dx.doi.org/10.1142/s0219581x05003139.

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To overcome the diffraction constraints of traditional optical lithography, the next generation lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron or ion beam technologies to produce sub-100 nm features. Perhaps the most under-developed and under-rated is the utilization of ions for lithographic purposes. All three ion beam techniques, FIB (Focused Ion Beam), Proton Beam Writing (p-beam writing) and Ion Projection Lithography (IPL) have now breached the technologically difficult 100 nm barrier, and are now capable of fabricating structures at the nanoscale. FIB, p-beam writing and IPL have the flexibility and potential to become leading contenders as NGLs. The three ion beam techniques have widely different attributes, and as such have their own strengths, niche areas and application areas. The physical principles underlying ion beam interactions with materials are described, together with a comparison with other lithographic techniques (electron beam writing and EUV/X-ray lithography). IPL follows the traditional lines of lithography, utilizing large area masks through which a pattern is replicated in resist material which can be used to modify the near-surface properties. In IPL, the complete absence of diffraction effects coupled with ability to tailor the depth of ion penetration to suit the resist thickness or the depth of modification are prime characteristics of this technique, as is the ability to pattern a large area in a single brief irradiation exposure without any wet processing steps. p-beam writing and FIB are direct write (maskless) processes, which for a long time have been considered too slow for mass production. However, these two techniques may have some distinct advantages when used in combination with nanoimprinting and pattern transfer. FIB can produce master stamps in any material, and p-beam writing is ideal for producing three-dimensional high-aspect ratio metallic stamps of precise geometry. The transfer of large scale patterns using nanoimprinting represents a technique of high potential for the mass production of a new generation of high area, high density, low dimensional structures. Finally a cross section of applications are chosen to demonstrate the potential of these new generation ion beam nanolithographies.

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MARSH, ROGER. "‘A Multicoloured Alphabet’: Rediscovering Albert Giraud’s Pierrot Lunaire." twentieth-century music 4, no. 01 (March 2007): 97–121. http://dx.doi.org/10.1017/s1478572207000540.

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AbstractAlbert Giraud’s cycle of fiftyrondels bergamasques,Pierrot Lunaire(1884), famously became, in Otto Erich Hartleben’s German translation, the basis of Schoenberg’s Op. 21 (1912). But for many decades the work of the Belgian poet was either straightforwardly denigrated for its anachronism and ‘mediocrity’ (Boulez), or at least declared inferior to its ‘vivid, Angst-filled transformation’ (Youens) in Hartleben’s hands. This article questions some widely held beliefs concerning the originalPierrotand its subsequent reworking. The claim that Schoenberg’s selection and reorganization of the poems imposed logic and order on an otherwise jumbled collection is found to be belied by the striking narrative coherence of Giraud’s original sequence, which is unified by a clearly defined set of symbols. Meanwhile, Hartleben’s putative ‘infidelity’ to Giraud is challenged by evidence both internal (his careful preservation of the rondel structure) and contextual (an esteem for his Belgian contemporary manifested in further poetic homages). While there is no doubt that Hartleben’s translations distance the poems from their background in Parnassian aesthetics – omitting crucial references to Brueghel, Shakespeare, Watteau, and the painter and lithographer Adolphe Willette – it is Giraud himself who deserves the credit for the most strikingly memorable images later absorbed into the expressionistic milieu of Schoenberg’s melodrama.

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Voznesenskiy, Sergey, and Aleksandr Nepomnyaschiy. "Dose Characteristics of Multilayer Chitosan-Metal-Dielectric Nanostructures for Electronic Nanolithography." Solid State Phenomena 245 (October 2015): 195–99. http://dx.doi.org/10.4028/www.scientific.net/ssp.245.195.

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This paper presents the results of the study of chitosan-metal nanofilms for the formation of submicron structures on glass substrates by electron lithography. The dependence of their basic lithographic characteristics from the selection of the metal for intermediate layer is obtained.

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Mullen, Eleanor, and Michael A. Morris. "Green Nanofabrication Opportunities in the Semiconductor Industry: A Life Cycle Perspective." Nanomaterials 11, no. 5 (April 22, 2021): 1085. http://dx.doi.org/10.3390/nano11051085.

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The turn of the 21st century heralded in the semiconductor age alongside the Anthropocene epoch, characterised by the ever-increasing human impact on the environment. The ecological consequences of semiconductor chip manufacturing are the most predominant within the electronics industry. This is due to current reliance upon large amounts of solvents, acids and gases that have numerous toxicological impacts. Management and assessment of hazardous chemicals is complicated by trade secrets and continual rapid change in the electronic manufacturing process. Of the many subprocesses involved in chip manufacturing, lithographic processes are of particular concern. Current developments in bottom-up lithography, such as directed self-assembly (DSA) of block copolymers (BCPs), are being considered as a next-generation technology for semiconductor chip production. These nanofabrication techniques present a novel opportunity for improving the sustainability of lithography by reducing the number of processing steps, energy and chemical waste products involved. At present, to the extent of our knowledge, there is no published life cycle assessment (LCA) evaluating the environmental impact of new bottom-up lithography versus conventional lithographic techniques. Quantification of this impact is central to verifying whether these new nanofabrication routes can replace conventional deposition techniques in industry as a more environmentally friendly option.

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Seo, Manseung, Haeryung Kim, and Masahiko Onosato. "Lithography Using a Microelectronic Mask." Journal of Robotics and Mechatronics 18, no. 6 (December 20, 2006): 816–23. http://dx.doi.org/10.20965/jrm.2006.p0816.

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In the strategy we propose for lithography using a microelectronic mask, the overlay intensity basis is defined taking into account instantaneous distributions of optical energy through the microelectronic mask from a micromirror onto a scrolling substrate. The microelectronic mask involves transfer of patterns as optical energy. We implemented a prototype lithography simulation system for generating lithographic data and predicting optomechatronic results. To ensure feasibility, we conducted lithography using a microelectronic mask on prototype equipment to fabricate actual wafers parallel to simulation. Results of simulation and experiments confirmed consistency both physically and mathematically. The appropriateness of the devised method, the precision of the implemented system, and the capability of pattern size control adjusting the occupancy limit without data modification have thus been confirmed.

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Heilandová, Lucie. "The First Lithographic Workshops in Brno and Early Lithography in Moravia." Acta Musei Nationalis Pragae – Historia litterarum 63, no. 3-4 (2019): 57–65. http://dx.doi.org/10.2478/amnpsc-2018-0008.

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Interest in the art of lithography in Moravia already began to appear in the early 19th century. The first lithographic workshops in Moravia were established as late as in 1824, when one was founded by Johann Baptista and Adolph Trassler as well as Johann Gastl at their printing works in Brno. Both the Trasslers and Gastl considered it to be an opportunity to expand the offer of their printing works and primarily became specialised in the printing of ephemera. Their lithographic production was thus tied to commercial art and book and magazine production rather than to independent artistic production.

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Liu, Fan, Guo Dong Gu, Chun Hong Zeng, Hai Jun Li, Wei Wang, Bao Shun Zhang, and Jin She Yuan. "Fabrication of 50nm T-Gate on GaN Substrate." Advanced Materials Research 482-484 (February 2012): 2341–44. http://dx.doi.org/10.4028/www.scientific.net/amr.482-484.2341.

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This paper reports New advances in e-beam lithography which have made possible the fabrication of high electron mobility transistors (HEMT) on GaN substrate with gate length well in the nanometer regime. Using PMMA/PMMA-MMA Pseudo-bilayer resists technology with electron beam lithography preparation 50nm gate length T-gate. A method of in a single lithographic step and a development step, which can be applied to simplify the process and get a more narrow gate. The ratio of head to footprint of the T gate is controllable. The way meets the need of the device fabrication.

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Park, Sang Wook, Hyun Jin Yoon, Hee Young Oh, Yong Il Kim, Gi Jin Kwun, and Hai Won Lee. "Synthesis of Resists Containing a Photoacid Generator Group for Atomic Force Microscope Lithography." Solid State Phenomena 121-123 (March 2007): 697–700. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.697.

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Photoacid generators (PAGs) have been widely used as a key component in a chemically amplified photoresist system. The PAG monomer containing an arylsulfonium triflate group was synthesized and was polymerized with benzyl methacrylates. The molecular weight and the content of PAG were controlled to improve thermal stability and sensitivity for atomic force microscope lithography. The fabrication of anodization patterns, which can be enhanced by addition of PAG unit to resist, was achieved at the low bias voltage and the high speed of AFM patterning. The physical properties of resists and lithographic factors affecting the high speed AFM lithography will be discussed.

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Pugachev, Mikhail V., Aliaksandr I. Duleba, Arslan A. Galiullin, and Aleksandr Y. Kuntsevich. "Micromask Lithography for Cheap and Fast 2D Materials Microstructures Fabrication." Micromachines 12, no. 8 (July 21, 2021): 850. http://dx.doi.org/10.3390/mi12080850.

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The fast and precise fabrication of micro-devices based on single flakes of novel 2D materials and stacked heterostructures is vital for exploration of novel functionalities. In this paper, we demonstrate a fast high-resolution contact mask lithography through a simple upgrade of metallographic optical microscope. Suggested kit for the micromask lithography is compact and easily compatible with a glove box, thus being suitable for a wide range of air-unstable materials. The shadow masks could be either ordered commercially or fabricated in a laboratory using a beam lithography. The processes of the mask alignment and the resist exposure take a few minutes and provide a micrometer resolution. With the total price of the kit components around USD 200, our approach would be convenient for laboratories with the limited access to commercial lithographic systems.

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Tejeda, R. O., E. G. Lovell, and R. L. Engelstad. "In-Plane Gravity Loading of a Circular Membrane." Journal of Applied Mechanics 67, no. 4 (May 5, 2000): 837–39. http://dx.doi.org/10.1115/1.1308581.

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This paper develops the displacement field for a circular membrane which is statically loaded by gravity acting in its plane. Coupled to the displacements are the stress and strain distributions. The solution is applicable to the modeling of next generation lithographic masks, ion-beam projection lithography masks in particular. [S0021-8936(00)00803-5]

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Stewart, Michael D., and C. Grant Willson. "Imprint Materials for Nanoscale Devices." MRS Bulletin 30, no. 12 (December 2005): 947–51. http://dx.doi.org/10.1557/mrs2005.248.

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AbstractNanoimprint lithography is a potentially low-cost, high-resolution patterning technique, but most of the surrounding development work has been directed toward tool designs and processing techniques. There remains a tremendous opportunity and need to develop new materials for specific nanoimprint applications. This article provides an overview of relevant materials-related development work for nanoimprint lithographic applications. Material requirements for nanoimprint patterning for the sub-45-nm integrated-circuit regime are discussed, along with proposed nanoimprint applications such as imprintable dielectrics, conducting polymers, biocompatible materials, and materials for microfluidic devices. Polymers available for thermal nanoimprint processing and photocurable precursors for ultraviolet-assisted nanoimprint lithography are discussed.

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SHEN, T. C. "ROLE OF SCANNING PROBES IN NANOELECTRONICS: A CRITICAL REVIEW." Surface Review and Letters 07, no. 05n06 (October 2000): 683–88. http://dx.doi.org/10.1142/s0218625x00000695.

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The continuous downsizing of electronic devices has promoted many ideas of lithography and fabrication techniques at the nanometer scale. Scanning probe lithography (SPL) has been intensively explored as a potential alternative. The conceptual development of the SPL endeavors and their basic mechanisms in the past decade are briefly reviewed. Scaling down the conventional field effect transistors below 30 nm may present enormous technical and economical challenges. Random polarization and fabrication of reproducible lateral tunneling junctions continue to be two major barriers for quantum devices. Instead of trying to compete with other projection type lithographic techniques at the nanometer scale, scanning probes are best suited to explore atom scale devices.

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Li, Mu Jun, Hui Chun Ye, and Lian Guan Shen. "A Fast Method for Analyzing the Effect of Mask Error on Photolithography Pattern Quality." Advanced Materials Research 291-294 (July 2011): 3097–102. http://dx.doi.org/10.4028/www.scientific.net/amr.291-294.3097.

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As an important factor the error of mask pattern is often ignored in the lithography simulation model. To investigate the impact of mask errors on the lithographic pattern, effects of how the wave-front on different mask pattern region affects the field points in resist is first introduced, and based on this analysis a method is proposed to quickly judge the affection of round corner error of mask pattern on the photo-resist pattern. By comparing the actual effect area and the effective wave-front area around the corner on mask pattern, the method can illustrate the quantitative relationship between variation in photo-resist pattern and the related mask error. Finally the simulation results are verified by experiments. The study results may contribute to the fast and accurate judgments of error in the lithography, and provide important theoretical basis for lithography error correction.

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Erdmann, Andreas, David Reibold, Tim Fühner, and Peter Evanschitzky. "Photomasks for Semiconductor Lithography: From Simple Shadow Casters to Complex 3D Scattering Objects." Advances in Science and Technology 55 (September 2008): 173–80. http://dx.doi.org/10.4028/www.scientific.net/ast.55.173.

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Lithographic processes belong to the most critical steps in the fabrication of microelectronic circuits. Optical projection lithography which transfers the layout of a mask into a photoresist at the top surface of a silicon wafer is still the workhorse of semiconductor industry. Many innovations regarding the optical imaging system and the introduction of new mask technologies have pushed optical projection techniques close to their theoretical limits. Nowadays, optical projection lithography is used to create 45nm features with a wavelength of 193nm. This paper discusses the impact of the mask on the performance of a lithographic process. For large feature sizes the mask can be considered as infinitely thin and its local transmission and phase can be directly derived from the design. For mask features comparable to the wavelength of the used light and below, the mask becomes a complex scattering object which has a pronounced impact on the intensity, phase, and polarization of the diffracted light. The light diffraction from the mask has to be computed by rigorous electromagnetic methods. Several consequences with respect to the choice of most appropriate mask materials and geometries will be discussed.

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Et. al., M. M. Matyakubova,. "Litographic Publications Of Khiva Khanate." Turkish Journal of Computer and Mathematics Education (TURCOMAT) 12, no. 4 (April 11, 2021): 101–5. http://dx.doi.org/10.17762/turcomat.v12i4.479.

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The article is dedicated to the issue of the lithographic publications of Khiva khanate at the end of the 19th and the beginning of the 20th centuries. The main attention is paid to the works of great writers and poets which were published in lithographies of Khiva khanate during that period. Also, the ideas in the article were proven by the facts mentioned in the works of historians

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Hruby, Jill. "LIGA Technologies and Applications." MRS Bulletin 26, no. 4 (April 2001): 337–40. http://dx.doi.org/10.1557/mrs2001.76.

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LIGA, an acronym for the German words for lithography, electroplating, and molding, is a technique used to produce micro-electromechanical systems (MEMS) made from metals, ceramics, or plastics. The LIGA process utilizes x-ray synchrotron radiation as a lithographic light source. Highly collimated, high-energy x-rays from the synchrotron impinge on a patterned mask in proximity to an x-ray-sensitive photoresist, typically poly(methyl methacrylate) (PMMA).

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Fallica, Roberto. "Beyond grayscale lithography: inherently three-dimensional patterning by Talbot effect." Advanced Optical Technologies 8, no. 3-4 (June 26, 2019): 233–40. http://dx.doi.org/10.1515/aot-2019-0005.

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Abstract There are a growing number of applications where three-dimensional patterning is needed for the fabrication of micro- and nanostructures. Thus far, grayscale lithography is the main technique for obtaining a thickness gradient in a resist material that is exploited for pattern transfer by anisotropic etch. However, truly three-dimensional structures can only be produced by unconventional lithography methods such as direct laser writing, focused ion beam electrodeposition, colloidal sphere lithography, and tilted multiple-pass projection lithography, but at the cost of remarkable complexity and lengthiness. In this work, the three-dimensional shape of light, which is formed by Talbot effect diffraction, was exploited to produce inherently three-dimensional patterns in a photosensitive polymer. Using light in the soft X-ray wavelength, periodic three-dimensional structures of lateral period 600 nm were obtained. The position at which the sample has to be located to be in the Fresnel regime was simulated using an analytical implementation of the Fresnel integrals approach. Exploiting the light shape forming in diffraction effects thus enables the patterning of high-resolution three-dimensional nanostructures over a large area and with a single exposure pass – which would be otherwise impossible with conventional lithographic methods.

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Балан, Н. Н., А. А. Березин, Е. С. Горнев, В. В. Иванов, Е. В. Ипатова, А. В. Кузовков, and М. Д. Шканакина. "ИСПОЛЬЗОВАНИЕ НЕЙРОСЕТЕВЫХ АЛГОРИТМОВ В ЗАДАЧАХ ВЫЧИСЛИТЕЛЬНОЙ ЛИТОГРАФИИ." NANOINDUSTRY Russia 96, no. 3s (June 15, 2020): 543–48. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.543.548.

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Работа посвящена вопросам применения нейросетевых алгоритмов в литографических расчетах. Дан обзор основного круга задач вычислительной литографии, допускающих целесообразность применения нейросетей для их решения. Описаны преимущества и недостатки нейросетевых решений, рекомендуемых для использования в рассматриваемых задачах. This paper is dedicated to the task of applying neural network-based algorithms to lithographic calculations. It reviews the family of problems in computational lithography to which neural networks are applicable. Pros and cons of such solutions have been discussed.

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Fang, Bin, Jiafeng Feng, Hongxiang Wei, Xiufeng Han, Baoshun Zhang, and Zhongming Zeng. "Fabrication of Spin-Transfer Nano-Oscillator by Colloidal Lithography." Journal of Nanomaterials 2015 (2015): 1–6. http://dx.doi.org/10.1155/2015/973957.

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We fabricate nanoscale spin-transfer oscillators (STOs) by utilizing colloidal nanoparticles as a lithographic mask. By this approach, high quality STO devices can be fabricated, and as an example the fabricated STO devices using MgO magnetic tunnel junction as the basic cell exhibit current-induced microwave emission with a large frequency tunability of 0.22 GHz/mA. Compared to the conventional approaches that involve a step of defining nanoscale elements by means of electron beam lithography, which is not readily available for many groups, our strategy for STO fabrication does not require the sophisticated equipment (~ million dollars per unit) and expensive lithography resist, while being cost-effective and easy to use in laboratory level. This will accelerate efforts to implement STO into on-chip integrated high-radio frequency applications.

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Lanzillo, Amanda. "Translating the Scribe: Lithographic Print and Vernacularization in Colonial India, 1857–1915." Comparative Critical Studies 16, no. 2-3 (October 2019): 281–300. http://dx.doi.org/10.3366/ccs.2019.0331.

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Focusing on the lithographic print revolution in North India, this article analyses the role played by scribes working in Perso-Arabic script in the consolidation of late nineteenth-century vernacular literary cultures. In South Asia, the rise of lithographic printing for Perso-Arabic script languages and the slow shift from classical Persian to vernacular Urdu as a literary register took place roughly contemporaneously. This article interrogates the positionality of scribes within these transitions. Because print in North India relied on lithography, not movable type, scribes remained an important part of book production on the Indian subcontinent through the early twentieth century. It analyses the education and models of employment of late nineteenth-century scribes. New scribal classes emerged during the transition to print and vernacular literary culture, in part due to the intervention of lithographic publishers into scribal education. The patronage of Urdu-language scribal manuals by lithographic printers reveals that scribal education in Urdu was directly informed by the demands of the print economy. Ultimately, using an analysis of scribal manuals, the article contributes to our knowledge of the social positioning of book producers in South Asia and demonstrates the vitality of certain practices associated with manuscript culture in the era of print.

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Deckman, H. W., B. Abeles, J. H. Dunsmuir, C. B. Roxlo, and T. D. Moustakas. "Molecular-Scale Mlcroporous Superlattices." MRS Bulletin 12, no. 1 (February 1987): 24–26. http://dx.doi.org/10.1557/s0883769400068718.

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We have been interested in fabricating structures which can have dimensions on the scale of molecules (˜10 Å). By producing lithographic structures on the molecular-scale length, we obtain a new class of materials with unusual chemical properties. The materials contain pores which have been shown to restrict the mobility and adsorption of molecules. This restriction is the basis of size- and shape-selective chemistry which is used in many modern separation and catalytic processes.Features in our materials are significantly smaller than the smallest nano-structures produced with electron beam lithography. To date 20–50 Å features have been produced with electron beam lithography which uses ionization from beam-solid interactions to drive radiation chemistry in a resist layer. These dimensions are near fundamental limits which come from beam-solid interactions and the response of the resist system. Further limitations occur when the nanostructural pattern must be transferred from the resist layer into a useful metal or semiconductor structure. Methods have not been devised to fully exploit the accuracy with which resist patterns can be defined, and the smallest useful transferred structures have dimensions of ˜80–100 Å.To produce the smallest of all lithographic structures, we use a new method for pattern generation. Instead of using radiation chemistry to define a pattern, we use the organization of layers in deposited superlattices.

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Puttaraksa, Nitipon, Mari Napari, Orapin Chienthavorn, Rattanaporn Norarat, Timo Sajavaara, Mikko Laitinen, Somsorn Singkarat, and Harry J. Whitlow. "Direct Writing of Channels for Microfluidics in Silica by MeV Ion Beam Lithography." Advanced Materials Research 254 (May 2011): 132–35. http://dx.doi.org/10.4028/www.scientific.net/amr.254.132.

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The lithographic exposure characteristic of amorphous silica (SiO2) was investigated for 6.8 MeV16O3+ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO2in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.

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Panzarasa, Guido, and Guido Soliveri. "Photocatalytic Lithography." Applied Sciences 9, no. 7 (March 27, 2019): 1266. http://dx.doi.org/10.3390/app9071266.

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Patterning, the controlled formation of ordered surface features with different physico-chemical properties, is a cornerstone of contemporary micro- and nanofabrication. In this context, lithographic approaches owe their wide success to their versatility and their relative ease of implementation and scalability. Conventional photolithographic methods require several steps and the use of polymeric photoresists for the development of the desired pattern, all factors which can be deleterious, especially for sensitive substrates. Efficient patterning of surfaces, with resolution down to the nanometer scale, can be achieved by means of photocatalytic lithography. This approach is based on the use of photocatalysts to achieve the selective chemical modification or degradation of self-assembled monolayers, polymers, and metals. A wide range of photoactive compounds, from semiconducting oxides to porphyrins, have been demonstrated to be suitable photocatalysts. The goal of the present review is to provide a comprehensive state-of-the-art photocatalytic lithography, ranging from approaches based on semiconducting oxides to singlet oxygen-based lithography. Special attention will be dedicated to the results obtained for the patterning of polymer brushes, the sculpturing of metal nanoparticle arrays, and the patterning of graphene-based structures.

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Lee, Su Yong, Do Young Noh, Hae Cheol Lee, Chung-Jong Yu, Yeukuang Hwu, and Hyon Chol Kang. "Direct-write X-ray lithography using a hard X-ray Fresnel zone plate." Journal of Synchrotron Radiation 22, no. 3 (April 2, 2015): 781–85. http://dx.doi.org/10.1107/s1600577515003306.

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Results are reported of direct-write X-ray lithography using a hard X-ray beam focused by a Fresnel zone plate with an outermost zone width of 40 nm. An X-ray beam at 7.5 keV focused to a nano-spot was employed to write arbitrary patterns on a photoresist thin film with a resolution better than 25 nm. The resulting pattern dimension depended significantly on the kind of underlying substrate, which was attributed to the lateral spread of electrons generated during X-ray irradiation. The proximity effect originated from the diffuse scattering near the focus and electron blur was also observed, which led to an increase in pattern dimension. Since focusing hard X-rays to below a 10 nm spot is currently available, the direct-write hard X-ray lithography developed in this work has the potential to be a promising future lithographic method.

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Lin, Jian-Shian, Chieh-Lung Lai, Ya-Chun Tu, Cheng-Hua Wu, and Yoshimi Takeuchi. "A Uniform Pressure Apparatus for Micro/Nanoimprint Lithography Equipment." International Journal of Automation Technology 3, no. 1 (January 5, 2009): 84–88. http://dx.doi.org/10.20965/ijat.2009.p0084.

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Nanoimprint lithography (NIL) has overcome the limitation of light diffraction. It is capable of printing features less than 10nm in size with high lithographic resolution, high manufacturing speed, and low production cost. The uniformity of pressure, however, remains a critical issue. To improve the uniformity of pressure, we developed a flexible uniform pressure component based on Pascal's Law. When external force is applied to this component, uniform pressure is delivered to the mold and substrate. Average pressure over the embossed area using our improved nanoimprint equipment deviates by only 3.15%.

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TEO, SELIN H. G., A. Q. LIU, G. L. SIA, C. LU, J. SINGH, M. B. YU, and H. Q. SUN. "DEEP UV LITHOGRAPHY FOR PILLAR TYPE NANOPHOTONIC CRYSTAL." International Journal of Nanoscience 04, no. 04 (August 2005): 559–66. http://dx.doi.org/10.1142/s0219581x05003577.

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The progress made to resolve challenges met in using deep UV lithography for batch fabrication of pillar type nano-photonic crystals is described, using data from experiments carried out based on two degrees, full factorial design of experiments and subsequently processed using variance analysis. A binary mask without phase shift features was used to obtain information on effects of lithographic parameters such as antireflection coatings, resist preparation recipes, exposure latitude and depth of focus biases. The results derived hence enabled successful derivations of high quality arrays of dense nano-pillars.

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Domonkos, Mária, Pavel Demo, and Alexander Kromka. "Nanosphere Lithography for Structuring Polycrystalline Diamond Films." Crystals 10, no. 2 (February 14, 2020): 118. http://dx.doi.org/10.3390/cryst10020118.

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This paper deals with the structuring of polycrystalline diamond thin films using the technique of nanosphere lithography. The presented multistep approaches relied on a spin-coated self-assembled monolayer of polystyrene spheres, which served as a lithographic mask for the further custom nanofabrication steps. Various arrays of diamond nanostructures—close-packed and non-close-packed monolayers over substrates with various levels of surface roughness, noble metal films over nanosphere arrays, ordered arrays of holes, and unordered pores—were created using reactive ion etching, chemical vapour deposition, metallization, and/or lift-off processes. The size and shape of the lithographic mask was altered using oxygen plasma etching. The periodicity of the final structure was defined by the initial diameter of the spheres. The surface morphology of the samples was characterized using scanning electron microscopy. The advantages and limitations of the fabrication technique are discussed. Finally, the potential applications (e.g., photonics, plasmonics) of the obtained nanostructures are reviewed.

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Bandić, Zvonimir Z., Dmitri Litvinov, and M. Rooks. "Nanostructured Materials in Information Storage." MRS Bulletin 33, no. 9 (September 2008): 831–37. http://dx.doi.org/10.1557/mrs2008.178.

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AbstractThe ever-increasing demand for information storage has pushed research and development of nonvolatile memories, particularly magnetic disk drives and silicon-based memories, to areal densities where bit sizes are approaching nanometer dimensions. At this level, material and device phenomena make further scaling increasingly difficult. The difficulties are illustrated in the examples of magnetic media and flash memory, such as thermal instability of sub-100-nm bits in magnetic memory and charge retention in flash memory, and solutions are discussed in the form of patterned media and crosspoint memories. The materials-based difficulties are replaced by nanofabrication challenges, requiring the introduction of new techniques such as nanoimprinting lithography for cost-effective manufacturing and self-assembly for fabrication on the sub-25-nm scale. Articles in this issue describe block-copolymer lithographic fabrication of patterned media, materials studies on the scaling limits of phase-change-based crosspoint memories, nanoscale fabrication using imprint lithography, and biologically inspired protein-based memory.

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Rajasekaran, Pradeep Ramiah, Chuanhong Zhou, Mallika Dasari, Kay-Obbe Voss, Christina Trautmann, and Punit Kohli. "Polymeric lithography editor: Editing lithographic errors with nanoporous polymeric probes." Science Advances 3, no. 6 (June 2017): e1602071. http://dx.doi.org/10.1126/sciadv.1602071.

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Bojko, R. J. "Quantitative lithographic performance of proximity correction for electron beam lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 8, no. 6 (November 1990): 1909. http://dx.doi.org/10.1116/1.585183.

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Koops, Hans W. P. "Combined lithographies for the reduction of stitching errors in lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 12, no. 6 (November 1994): 3265. http://dx.doi.org/10.1116/1.587609.

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Choi, Jae Hak, Phil Hyun Kang, Young Chang Nho, and Sung Kwon Hong. "POSS-Containing Nanocomposite Materials for Next Generation Nanolithography." Solid State Phenomena 119 (January 2007): 299–302. http://dx.doi.org/10.4028/www.scientific.net/ssp.119.299.

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Nanocomposite materials based on poly(p-hydroxystyrene-co-2-methyl-2-adamantyl methacrylate-co-methacrylisobutyl-POSS) were synthesized and evaluated as EUV chemically amplified resists. Incorporation of 2-methyl-2-adamantyl and POSS groups into the matrix polymer made it possible to improve the dry-etch resistance, and excellent lithographic performance was obtained. The well-defined 250 nm positive patterns were obtained using a KrF excimer laser scanner, and 100 nm elbow patterns using an EUV lithography tool. The dry-etch resistance of this resist for a CF4-based plasma was comparable to that of poly(p-hydroxystyrene).

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Doll, P. W., C. Semperowitsch, M. Häfner, R. Ahrens, B. Spindler, and A. E. Guber. "Fabrication of Micro Structured Dental Implant Abutments for Optimized Soft Tissue Integration." Current Directions in Biomedical Engineering 4, no. 1 (September 1, 2018): 677–80. http://dx.doi.org/10.1515/cdbme-2018-0163.

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AbstractWithin this work we demonstrate a UV-Lithography based method for the fabrication of microgrooves on titanium surfaces. The microgroove period, depth and profile form are easily controllable by process parameters. By controlled under-etching of a lithographically structured photo resist, different profile forms from nearly rectangular, over curvy/spiked to sinus-shaped forms with different amplitudes and sizes can be realized. The resulting microgrooves can be directly used as implant or implant abutment surfaces to enhance soft tissue integration or to create molds for cell/substrate interaction studies. Due to the lithographic process the whole method is highly controllable and reproducible.

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Kim, Kibeom, Sangkwon Han, Jinsik Yoon, Sunghoon Kwon, Hun-Kuk Park, and Wook Park. "Lithographic resolution enhancement of a maskless lithography system based on a wobulation technique for flow lithography." Applied Physics Letters 109, no. 23 (December 5, 2016): 234101. http://dx.doi.org/10.1063/1.4967373.

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Yonghui Zhang, Yonghui Zhang, Zihui Zhang Zihui Zhang, Chong Geng Chong Geng, Shu Xu Shu Xu, Tongbo Wei Tongbo Wei, and and Wen'gang Bi and Wen'gang Bi. "Versatile nanosphere lithography technique combining multiple-exposure nanosphere lens lithography and nanosphere template lithography." Chinese Optics Letters 15, no. 6 (2017): 062201–62205. http://dx.doi.org/10.3788/col201715.062201.

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Wei, Pengzhi, Yanqiu Li, Tie Li, Naiyuan Sheng, Enze Li, and Yiyu Sun. "Multi-Objective Defocus Robust Source and Mask Optimization Using Sensitive Penalty." Applied Sciences 9, no. 10 (May 27, 2019): 2151. http://dx.doi.org/10.3390/app9102151.

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The continuous decrease in the size of lithographic technology nodes has led to the development of source and mask optimization (SMO) and also to the control of defocus becoming stringent in the actual lithography process. Due to multi-factor impact, defocusing is always changeable and uncertain in the real exposure process. But conventional SMO assumes the lithography system is ideal, which only compensates the optical proximity effect (OPE) in the best focus plane. Therefore, to solve the inverse lithography problem with more uniformity of pattern in different defocus variations, we proposed a defocus robust SMO (DRSMO) approach that is driven by a defocus sensitivity penalty function for the first time. This multi-objective optimization samples a wide range of defocus disturbances and it can be proceeded by the mini-batch gradient descent (MBGD) algorithm effectively. The simulation results showed that a more robust defocus source and mask can be designed through DRSMO optimization. The defocus sensitivity factor sβ maximally decreased 63.5% compared to conventional SMO, and due to the low error sensitivity and the depth of defocus (DOF), the process window (PW) was further enlarged effectively. Compared to conventional SMO, the exposure latitude (EL) maximally increased from 4.5% to 10.5% and DOF maximally increased 54.5% (EL = 5%), which proved the validity of the DRSMO method in improving the focusing performance.

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Shamsuddin, Liyana, Khairudin Mohamed, and Alsadat Rad Maryam. "The Investigation of Microstructures Fabrication on Quartz Substrate Employing Electron Beam Lithography (EBL) and ICP-RIE Process." Advanced Materials Research 980 (June 2014): 69–73. http://dx.doi.org/10.4028/www.scientific.net/amr.980.69.

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The fabrication of micro or nano-structures on quartz substrate has attracted researchers' attention and interests in recent years due to a wide range of potential applications such as NEMS/MEMS, sensors and biomedical engineering. Various types of next generation lithographic methods have been explored since optical lithography physical limitations has hindered the fabrication of high aspects ratio (HAR) structure on quartz substrates. In this research, the top-down fabrication approach was employed to fabricate microstructures on quartz substrate using Electron Beam Lithography (EBL) system, followed by the pattern transfer process using Inductively Coupled Plasma-Reactive Ion Etching (ICP-RIE) technique. The factors that influenced pattern definition include the type of electron beam (e-beam) photoresist, e-beam exposure parameter such as spot size, working distance, write field, step size, e-beam current, dosage as well as the type of developer and its developing time. The optimum conditions were investigated in achieving micro or nano-structures. Field emission scanning electron microscopy (FESEM) with energy-dispersive X-ray (EDX) and atomic force microscope (AFM) were utilized to characterize the structures profiles.

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CHEN, XING, DONG WEON LEE, and YOUNG SOO CHOI. "HIGH EFFICIENCY MICROMACHINING SYSTEM APPLIED IN NANOLITHOGRAPHY." International Journal of Modern Physics B 22, no. 09n11 (April 30, 2008): 1865–70. http://dx.doi.org/10.1142/s0217979208047547.

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Scanning probe lithography such as direct–writing lithographic processes and nanoscratching techniques based on scanning probe microscopy have presented new micromachining methods for microelectromechanical system (MEMS). In this paper, a micromachining system for thermal scanning probe lithography is introduced, which consists of the cantilever arrays and a big stroke micro XY–stage. A large machining area and high machining speed can be realized by combining arrays of cantilevers possessing sharp tips at their top with the novel micro XY–stage which can obtain big displacements under relatively low driving voltage and in a small size. According to the above configuration, this micromachining system is provided with high throughputs and suitable for industrialization due to its MEMS–based simple fabrication process. The novel micro XY–stage applied in this system is presented in detail including the unique structure and principles, which shows an obvious improvement and distinct advantages in comparison with traditional structures. It is analyzed by mathematical model and then simulated using finite element method (FEM), it is proved to be able to practically serve the micromachining system with high capability.

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Jones, Richard G., Christopher K. Ober, Teruaki Hayakawa, Christine K. Luscombe, and Natalie Stingelin. "Terminology of polymers in advanced lithography (IUPAC Recommendations 2020)." Pure and Applied Chemistry 92, no. 11 (November 26, 2020): 1861–91. http://dx.doi.org/10.1515/pac-2018-1215.

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AbstractAs increasingly smaller molecular materials and material structures are devised or developed for technological applications, the demands on the processes of lithography now routinely include feature sizes that are of the order of 10 nm. In reaching such a fine level of resolution, the methods of lithography have increased markedly in sophistication and brought into play 2terminology that is unfamiliar, on the one hand, to scientists tasked with the development of new lithographic materials or, on the other, to the engineers who design and operate the complex equipment that is required in modern-day processing. Publications produced by scientists need to be understood by engineers and vice versa, and these commonly arise from collaborative research that draws heavily on the terminology of two or more of the traditional disciplines. It is developments in polymer science and material science that lead progress in areas that cross traditional boundaries, such as microlithography. This document provides the exact definitions of a selection of unfamiliar terms that researchers and practitioners from different disciplines might encounter.

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LI, XIALI, GUANGQIAN YANG, JIAN CHEN, RONGJUN ZHANG, WEIMIN ZHOU, YANBO LIU, JING ZHANG, and QINGKANG WANG. "ENHANCED LIGHT EXTRACTION FROM COLLOIDAL ZnO QD FILM BY ADDING ON PHOTONIC CRYSTALS USING UV-NANOIMPRINT LITHOGRAPHY." Surface Review and Letters 16, no. 03 (June 2009): 367–73. http://dx.doi.org/10.1142/s0218625x09012731.

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A significant enhancement in light extraction from colloidal ZnO QD films was observed on an addition of a layer of two-dimensional photonic crystal (2D-PC) structure. The PCs with a rectangular-lattice air-hole array pattern with the period of 1.4 μm and the hole-size of 400 nm were fabricated by UV-nanoimprint lithography (UV-NIL). Unlike the commonly utilized electron-beam lithographic technique, the UV-NIL process can make patterns over a large area with high throughput. The resultant colloidal zinc oxide ( ZnO ) QD films with a PC pattern add-on had nearly double the output power, as measured from the top of the film.

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Schein, R. H. "Representing Urban America: 19th-Century Views of Landscape, Space, and Power." Environment and Planning D: Society and Space 11, no. 1 (February 1993): 7–21. http://dx.doi.org/10.1068/d110007.

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Approximately 5000 lithographic views of cities across America were produced and copies were widely disseminated in the century after 1825, In this paper, urban lithographs are examined as landscape texts in light of contemporary notions of space, vision, representation, and power. A major shift in the genre of urban representation from ‘pictorial’ to ‘bird's-eye’ views is presented as capturing the story of an emerging industrial-capitalist order; as embodying the place of the individual within that order; and as actively legitimating/promoting particular visions of change and progress. Interpreting urban views illustrates the problematic nature of representation and the need to examine particular landscapes/representations within their cultural contexts.

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Guo, Shuping, Zifeng Lu, Zheng Xiong, Long Huang, Hua Liu, and Jinhuan Li. "Lithographic pattern quality enhancement of DMD lithography with spatiotemporal modulated technology." Optics Letters 46, no. 6 (March 10, 2021): 1377. http://dx.doi.org/10.1364/ol.415788.

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Huang, Cheng, Alexander Förste, Stefan Walheim, and Thomas Schimmel. "Polymer blend lithography for metal films: large-area patterning with over 1 billion holes/inch2." Beilstein Journal of Nanotechnology 6 (May 26, 2015): 1205–11. http://dx.doi.org/10.3762/bjnano.6.123.

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Polymer blend lithography (PBL) is a spin-coating-based technique that makes use of the purely lateral phase separation between two immiscible polymers to fabricate large area nanoscale patterns. In our earlier work (Huang et al. 2012), PBL was demonstrated for the fabrication of patterned self-assembled monolayers. Here, we report a new method based on the technique of polymer blend lithography that allows for the fabrication of metal island arrays or perforated metal films on the nanometer scale, the metal PBL. As the polymer blend system in this work, a mixture of polystyrene (PS) and poly(methyl methacrylate) (PMMA), dissolved in methyl ethyl ketone (MEK) is used. This system forms a purely lateral structure on the substrate at controlled humidity, which means that PS droplets are formed in a PMMA matrix, whereby both phases have direct contact both to the substrate and to the air interface. Therefore, a subsequent selective dissolution of either the PS or PMMA component leaves behind a nanostructured film which can be used as a lithographic mask. We use this lithographic mask for the fabrication of metal patterns by thermal evaporation of the metal, followed by a lift-off process. As a consequence, the resulting metal nanostructure is an exact replica of the pattern of the selectively removed polymer (either a perforated metal film or metal islands). The minimum diameter of these holes or metal islands demonstrated here is about 50 nm. Au, Pd, Cu, Cr and Al templates were fabricated in this work by metal PBL. The wavelength-selective optical transmission spectra due to the localized surface plasmonic effect of the holes in perforated Al films were investigated and compared to the respective hole diameter histograms.

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Journal articles on the topic 'Lithographer'

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