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Journal articles on the topic 'Lithographic applications'

Author: Grafiati

Published: 9 March 2023

Last updated: 31 July 2025

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1

Kwon, B., and Jong H. Kim. "Importance of Molds for Nanoimprint Lithography: Hard, Soft, and Hybrid Molds." Journal of Nanoscience 2016 (June 22, 2016): 1–12. http://dx.doi.org/10.1155/2016/6571297.

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Nanoimprint lithography has attracted considerable attention in academic and industrial fields as one of the most prominent lithographic techniques for the fabrication of the nanoscale devices. Effectively controllable shapes of fabricated elements, extremely high resolution, and cost-effectiveness of this especial lithographic system have shown unlimited potential to be utilized for practical applications. In the past decade, many different lithographic techniques have been developed such as electron beam lithography, photolithography, and nanoimprint lithography. Among them, nanoimprint lith

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2

Researcher. "COMPREHENSIVE ANALYSIS OF NANOSCALE FABRICATION TECHNIQUES FOR SEMICONDUCTOR DEVICES WITH EMPHASIS ON LITHOGRAPHIC INNOVATIONS AND QUANTUM DOT INTEGRATION." International Journal of Semiconductor Science (IJSS) 3, no. 1 (2025): 1–6. https://doi.org/10.5281/zenodo.14753456.

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Nanoscale fabrication is a cornerstone of semiconductor device advancement, enabling the miniaturization and enhanced functionality of modern electronics. This paper provides a comprehensive analysis of nanoscale fabrication techniques, focusing on lithographic innovations and the integration of quantum dots (QDs) as active components. Key lithographic methods, including EUV lithography and nanoimprint lithography, are compared, and the unique properties and applications of quantum dots in semiconductor devices are discussed. A review of recent literature highlights the interplay between advan

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3

Hruby, Jill. "LIGA Technologies and Applications." MRS Bulletin 26, no. 4 (2001): 337–40. http://dx.doi.org/10.1557/mrs2001.76.

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LIGA, an acronym for the German words for lithography, electroplating, and molding, is a technique used to produce micro-electromechanical systems (MEMS) made from metals, ceramics, or plastics. The LIGA process utilizes x-ray synchrotron radiation as a lithographic light source. Highly collimated, high-energy x-rays from the synchrotron impinge on a patterned mask in proximity to an x-ray-sensitive photoresist, typically poly(methyl methacrylate) (PMMA).

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4

Stewart, Michael D., and C. Grant Willson. "Imprint Materials for Nanoscale Devices." MRS Bulletin 30, no. 12 (2005): 947–51. http://dx.doi.org/10.1557/mrs2005.248.

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AbstractNanoimprint lithography is a potentially low-cost, high-resolution patterning technique, but most of the surrounding development work has been directed toward tool designs and processing techniques. There remains a tremendous opportunity and need to develop new materials for specific nanoimprint applications. This article provides an overview of relevant materials-related development work for nanoimprint lithographic applications. Material requirements for nanoimprint patterning for the sub-45-nm integrated-circuit regime are discussed, along with proposed nanoimprint applications such

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5

Finter, J. "Photopolymer Systems for Lithographic Applications." Molecular Crystals and Liquid Crystals Incorporating Nonlinear Optics 161, no. 1 (1988): 231–53. http://dx.doi.org/10.1080/00268948808070251.

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6

Angelopoulos, Marie. "Lithographic applications of conducting polymers." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 9, no. 6 (1991): 3428. http://dx.doi.org/10.1116/1.585816.

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7

Schriever, Guido, and Peter Zink. "EUV Sources for Lithographic Applications." Optik & Photonik 3, no. 2 (2008): 40–43. http://dx.doi.org/10.1002/opph.201190189.

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8

Hatzakis, Michael. "Organosilicon polymers for lithographic applications." Makromolekulare Chemie. Macromolecular Symposia 24, no. 1 (1989): 169–75. http://dx.doi.org/10.1002/masy.19890240117.

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9

Lauria, John, Ronald Albright, Olga Vladimirsky, et al. "SLM device for 193nm lithographic applications." Microelectronic Engineering 86, no. 4-6 (2009): 569–72. http://dx.doi.org/10.1016/j.mee.2008.11.022.

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10

Díaz, Diego J., Jamie E. Hudson, Gregory D. Storrier, Héctor D. Abruña, Narayanan Sundararajan, and Christopher K. Ober. "Lithographic Applications of Redox Probe Microscopy." Langmuir 17, no. 19 (2001): 5932–38. http://dx.doi.org/10.1021/la010561j.

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11

Clendenning, Scott B., and Ian Manners. "Lithographic applications of highly metallized polyferrocenylsilanes." Macromolecular Symposia 196, no. 1 (2003): 71–76. http://dx.doi.org/10.1002/masy.200390178.

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12

Ahmad Kamal, Ahmad Syazwan, Cheng-Chieh Lin, Zhiyu Wang, et al. "CsPbBr₃ nanocrystals plasmonic distributed Bragg reflector waveguide laser." Applied Physics Letters 122, no. 7 (2023): 071104. http://dx.doi.org/10.1063/5.0128232.

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The recent development of perovskite-based lasers showcased the outstanding optical properties of the material such as high absorption coefficient and high quantum yield. The lasers were demonstrated in the form of nanowires and nanoplates, which are difficult to be integrated on a chip in the form of high-density arrays due to the difficulties in positioning them on the chip. The solution to this problem should be to use the well-known lithography process in the fabrication process of the lasers. In this work, we demonstrate several perovskite-based plasmonic lasers that were fabricated by us

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13

Domonkos, Mária, Pavel Demo, and Alexander Kromka. "Nanosphere Lithography for Structuring Polycrystalline Diamond Films." Crystals 10, no. 2 (2020): 118. http://dx.doi.org/10.3390/cryst10020118.

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This paper deals with the structuring of polycrystalline diamond thin films using the technique of nanosphere lithography. The presented multistep approaches relied on a spin-coated self-assembled monolayer of polystyrene spheres, which served as a lithographic mask for the further custom nanofabrication steps. Various arrays of diamond nanostructures—close-packed and non-close-packed monolayers over substrates with various levels of surface roughness, noble metal films over nanosphere arrays, ordered arrays of holes, and unordered pores—were created using reactive ion etching, chemical vapour

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14

Huenger, Eric, Joe Lachowski, Greg Prokopowicz, et al. "Low Temperature Curing - Aqueous Base Developable Photoimageable Dielectric for WLP (Wafer Level Packaging)." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, DPC (2012): 000986–1015. http://dx.doi.org/10.4071/2012dpc-tp25.

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As advanced packaging application space evolves and continues to deviate from the conventional shrinkage pathway predicted by Moore's law, material suppliers need to continue to work with OEMs, OSATs and Foundries to identify specific opportunities. One such opportunity continues to present itself in developing new materials to support new platforms for next generation products to support 3D chip stacking and TSV applications. The newer material sets can be established to meet more challenging design requirements associated with the demands, presented by the application from both a physical/li

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15

Lo, Ting-Ya, Mohan Raj Krishnan, Kai-Yuan Lu, and Rong-Ming Ho. "Silicon-containing block copolymers for lithographic applications." Progress in Polymer Science 77 (February 2018): 19–68. http://dx.doi.org/10.1016/j.progpolymsci.2017.10.002.

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16

Kato, Tadao, Akihiko Yasuoka, and Kyoichiro Fujikawa. "Focused ion beam technologies for lithographic applications." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 37-38 (February 1989): 218–23. http://dx.doi.org/10.1016/0168-583x(89)90173-0.

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17

WATT, F., A. A. BETTIOL, J. A. VAN KAN, E. J. TEO, and M. B. H. BREESE. "ION BEAM LITHOGRAPHY AND NANOFABRICATION: A REVIEW." International Journal of Nanoscience 04, no. 03 (2005): 269–86. http://dx.doi.org/10.1142/s0219581x05003139.

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To overcome the diffraction constraints of traditional optical lithography, the next generation lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron or ion beam technologies to produce sub-100 nm features. Perhaps the most under-developed and under-rated is the utilization of ions for lithographic purposes. All three ion beam techniques, FIB (Focused Ion Beam), Proton Beam Writing (p-beam writing) and Ion Projection Lithography (IPL) have now breached the technologically difficult 100 nm barrier, and are now capable of fabricating structures at the na

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18

Kainz, Michael, Stjepan Perak, Gerald Stubauer, et al. "Additive and Lithographic Manufacturing of Biomedical Scaffold Structures Using a Versatile Thiol-Ene Photocurable Resin." Polymers 16, no. 5 (2024): 655. http://dx.doi.org/10.3390/polym16050655.

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Additive and lithographic manufacturing technologies using photopolymerisation provide a powerful tool for fabricating multiscale structures, which is especially interesting for biomimetic scaffolds and biointerfaces. However, most resins are tailored to one particular fabrication technology, showing drawbacks for versatile use. Hence, we used a resin based on thiol-ene chemistry, leveraging its numerous advantages such as low oxygen inhibition, minimal shrinkage and high monomer conversion. The resin is tailored to applications in additive and lithographic technologies for future biofabricati

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19

Garner, Grant P., Paulina Rincon Delgadillo, Roel Gronheid, Paul F. Nealey, and Juan J. de Pablo. "Design of surface patterns with optimized thermodynamic driving forces for the directed self-assembly of block copolymers in lithographic applications." Molecular Systems Design & Engineering 2, no. 5 (2017): 567–80. http://dx.doi.org/10.1039/c7me00028f.

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20

Basu, Prithvi, Jyoti Verma, Vishnuram Abhinav, Ratneshwar Kumar Ratnesh, Yogesh Kumar Singla, and Vibhor Kumar. "Advancements in Lithography Techniques and Emerging Molecular Strategies for Nanostructure Fabrication." International Journal of Molecular Sciences 26, no. 7 (2025): 3027. https://doi.org/10.3390/ijms26073027.

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Lithography is crucial to semiconductor manufacturing, enabling the production of smaller, more powerful electronic devices. This review explores the evolution, principles, and advancements of key lithography techniques, including extreme ultraviolet (EUV) lithography, electron beam lithography (EBL), X-ray lithography (XRL), ion beam lithography (IBL), and nanoimprint lithography (NIL). Each method is analyzed based on its working principles, resolution, resist materials, and applications. EUV lithography, with sub-10 nm resolution, is vital for extending Moore’s Law, leveraging high-NA optic

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21

Yellen, B. B., G. Friedman, and K. A. Barbee. "Programmable Self-Aligning Ferrofluid Masks for Lithographic Applications." IEEE Transactions on Magnetics 40, no. 4 (2004): 2994–96. http://dx.doi.org/10.1109/tmag.2004.829836.

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22

Khonina, Svetlana N., Nikolay L. Kazanskiy, and Muhammad A. Butt. "Grayscale Lithography and a Brief Introduction to Other Widely Used Lithographic Methods: A State-of-the-Art Review." Micromachines 15, no. 11 (2024): 1321. http://dx.doi.org/10.3390/mi15111321.

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Lithography serves as a fundamental process in the realms of microfabrication and nanotechnology, facilitating the transfer of intricate patterns onto a substrate, typically in the form of a wafer or a flat surface. Grayscale lithography (GSL) is highly valued in precision manufacturing and research endeavors because of its unique capacity to create intricate and customizable patterns with varying depths and intensities. Unlike traditional binary lithography, which produces discrete on/off features, GSL offers a spectrum of exposure levels. This enables the production of complex microstructure

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23

Fang, Bin, Jiafeng Feng, Hongxiang Wei, Xiufeng Han, Baoshun Zhang, and Zhongming Zeng. "Fabrication of Spin-Transfer Nano-Oscillator by Colloidal Lithography." Journal of Nanomaterials 2015 (2015): 1–6. http://dx.doi.org/10.1155/2015/973957.

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We fabricate nanoscale spin-transfer oscillators (STOs) by utilizing colloidal nanoparticles as a lithographic mask. By this approach, high quality STO devices can be fabricated, and as an example the fabricated STO devices using MgO magnetic tunnel junction as the basic cell exhibit current-induced microwave emission with a large frequency tunability of 0.22 GHz/mA. Compared to the conventional approaches that involve a step of defining nanoscale elements by means of electron beam lithography, which is not readily available for many groups, our strategy for STO fabrication does not require th

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24

PRZYBILLA, KLAUS-JÜRGEN, RALPH DAMMEL, HORST RÖSCHERT, WALTER SPIESS, and GEORG PAWLOWSKI. "New t-BOC blocked polymers for advanced lithographic applications." Journal of Photopolymer Science and Technology 4, no. 3 (1991): 421–32. http://dx.doi.org/10.2494/photopolymer.4.421.

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25

Hiraoka, Hiroyuki, Sylvain Lazare, and Alain Cros. "Lithographic applications of excimer laser exposures of polymeric films." Journal of Photopolymer Science and Technology 4, no. 3 (1991): 463–68. http://dx.doi.org/10.2494/photopolymer.4.463.

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26

Okoroanyanwu, Uzodinma, Jeffrey Byers, Tsutomu Shimokawa, and C. Grant Willson. "Alicyclic Polymers for 193 nm Resist Applications: Lithographic Evaluation." Chemistry of Materials 10, no. 11 (1998): 3328–33. http://dx.doi.org/10.1021/cm970505x.

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27

Heertjes, Marcel, and Tim Tso. "Nonlinear iterative learning control with applications to lithographic machinery." Control Engineering Practice 15, no. 12 (2007): 1545–55. http://dx.doi.org/10.1016/j.conengprac.2007.03.005.

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28

Wieberger, Florian, Drew C. Forman, Christian Neuber, et al. "Tailored star-shaped statistical teroligomers viaATRP for lithographic applications." J. Mater. Chem. 22, no. 1 (2012): 73–79. http://dx.doi.org/10.1039/c1jm11922b.

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29

SHIN, HAYONG, SEYOUN PARK, EONJIN PARK, and DEOK-SOO KIM. "VORONOI DIAGRAM OF A POLYGON IN CHESSBOARD METRIC AND MASKLESS LITHOGRAPHIC APPLICATIONS." International Journal of Computational Geometry & Applications 18, no. 04 (2008): 357–71. http://dx.doi.org/10.1142/s0218195908002672.

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Lithography using photomasks has been the major workhorse in manufacturing printed circuit boards, semiconductors, and flat panel display devices. However, the cost of photomask is so high that it often becomes the bottleneck, especially when the production volume is low. For this reason, maskless lithography technology is recently gaining more attention, and hence, the computation of efficient lithography path becomes of greater importance than ever in order to obtain high throughput of lithography process. The target machine of this paper has a numerically controlled XY table on which a subs

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30

Fallica, Roberto. "Beyond grayscale lithography: inherently three-dimensional patterning by Talbot effect." Advanced Optical Technologies 8, no. 3-4 (2019): 233–40. http://dx.doi.org/10.1515/aot-2019-0005.

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Abstract There are a growing number of applications where three-dimensional patterning is needed for the fabrication of micro- and nanostructures. Thus far, grayscale lithography is the main technique for obtaining a thickness gradient in a resist material that is exploited for pattern transfer by anisotropic etch. However, truly three-dimensional structures can only be produced by unconventional lithography methods such as direct laser writing, focused ion beam electrodeposition, colloidal sphere lithography, and tilted multiple-pass projection lithography, but at the cost of remarkable compl

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31

Costa, João, Daniel Almeida, Alessandro Fantoni, Paulo Lourenço, and Manuela Vieira. "Silicon Nitride Interferometers for Optical Sensing with Multi-micron Dimensions." Journal of Physics: Conference Series 2407, no. 1 (2022): 012005. http://dx.doi.org/10.1088/1742-6596/2407/1/012005.

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Abstract Increasing the size of the smallest features of Photonic Integrated Circuits (PICs) to multi-micron dimensions can be advantageous to avoid expensive and complex lithographic steps in the fabrication process. In applications where extremely reduced chip size is not a requirement, the design of devices with multi-micron dimensions is potential interesting to avoid the need for e-beam lithography. Another benefit is that making the dimensions larger reduces the effect of lithographic imperfections such as waveguide surface roughness. However, the benefits do not come without limitations

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32

TEO, SELIN H. G., A. Q. LIU, G. L. SIA, et al. "DEEP UV LITHOGRAPHY FOR PILLAR TYPE NANOPHOTONIC CRYSTAL." International Journal of Nanoscience 04, no. 04 (2005): 559–66. http://dx.doi.org/10.1142/s0219581x05003577.

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The progress made to resolve challenges met in using deep UV lithography for batch fabrication of pillar type nano-photonic crystals is described, using data from experiments carried out based on two degrees, full factorial design of experiments and subsequently processed using variance analysis. A binary mask without phase shift features was used to obtain information on effects of lithographic parameters such as antireflection coatings, resist preparation recipes, exposure latitude and depth of focus biases. The results derived hence enabled successful derivations of high quality arrays of d

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33

TEO, SELIN H. G., A. Q. LIU, J. SINGH, M. B. YU, H. Q. SUN, and N. SINGH. "SUB-100 nm LITHOGRAPHY WITH PATTERN AND PARTIAL COHERENCE CONTROL." International Journal of Nanoscience 05, no. 04n05 (2006): 383–88. http://dx.doi.org/10.1142/s0219581x06004516.

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This paper describes optical patterning of sub-lithographic wavelength features using only conventional chrome-on-glass binary photomasks without phase-shift features. The sub-100 nm patterns were obtained through manipulation of masks bias designs and partial coherence control of the lithographic radiation. The key factors in the design of experiments are the density and design of masks patterns and the partial coherence of exposure radiation system used. Based on the study, smallest resolution of 36% that of designed value can be obtained for features of 75 nm using a 200 nm designed line wi

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34

Jacques, E., L. Ni, A. C. Salaün, R. Rogel, and L. Pichon. "Polysilicon Nanowires for chemical sensing applications." MRS Proceedings 1439 (2012): 133–38. http://dx.doi.org/10.1557/opl.2012.1217.

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ABSTRACTPolycrystalline silicon nanowires are synthesized using a classical fabrication method commonly used in microelectronic industry: the sidewall spacer formation technique. Assets of this technological process rest on low cost lithographic tools use, classical silicon planar technology compatibility and the possibility to get by direct patterning numerous parallel nanowires with precise location on the substrate. Grounded and suspended polycrystalline silicon nanowires with a curvature radius as low as 150nm are integrated into resistors and used as gas (ammonia) sensors. Results show po

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35

Cheng, Joy Y., Alshaki Nelson, Charles T. Rettner, et al. "Directed Self-assembly on Sparse Chemical Patterns for Lithographic Applications." Journal of Photopolymer Science and Technology 22, no. 2 (2009): 219–22. http://dx.doi.org/10.2494/photopolymer.22.219.

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36

Davidson, K., S. El-Attawy, M. El-Gamal, M. A. Khattab, and A. M. El-Demerdach. "Synthesis of New Polymers for Photoresist and Lithographic Printing Applications." High Performance Polymers 14, no. 1 (2002): 3–15. http://dx.doi.org/10.1177/0954008302014001091.

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37

Shih, Ching-Jui, Shih-Fu Ou, Chia-Hung Yeh, Chao-Sung Lin, and Yung-Ning Pan. "Applications of lithographic mask technology in fabrication of diamond dresser." International Journal of Advanced Manufacturing Technology 68, no. 9-12 (2013): 2329–34. http://dx.doi.org/10.1007/s00170-013-4845-9.

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38

Chan, Wing Yan, Alison Y. Cheng, Scott B. Clendenning, and Ian Manners. "Synthesis and lithographic applications of highly metallized cluster-based polyferrocenylsilanes." Macromolecular Symposia 209, no. 1 (2004): 163–76. http://dx.doi.org/10.1002/masy.200450511.

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Richards, J. F., E. B. Troughton, R. A. Dennis, and P. E. Russell. "Atomic force microscopy studies of microstructure and properties of self-assembled monolayers." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 864–65. http://dx.doi.org/10.1017/s0424820100166786.

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Self-assembled monolayers are unique structures and have received considerable attention from microscopists seeking to image the predicted molecular level structure. More recently, practical engineering applications of SAMs have been proposed in areas ranging from corrosion barriers to adhesion promoters to lithographic resists. While some of the applications of interest, most notably the lithographic resists, can be developed on substrates close to the ideal; such as single crystal Si wafers or thin epitaxial films; many others will require the coating of very non-ideal surfaces. These may ra

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40

Shamsuddin, Liyana, Khairudin Mohamed, and Alsadat Rad Maryam. "The Investigation of Microstructures Fabrication on Quartz Substrate Employing Electron Beam Lithography (EBL) and ICP-RIE Process." Advanced Materials Research 980 (June 2014): 69–73. http://dx.doi.org/10.4028/www.scientific.net/amr.980.69.

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The fabrication of micro or nano-structures on quartz substrate has attracted researchers' attention and interests in recent years due to a wide range of potential applications such as NEMS/MEMS, sensors and biomedical engineering. Various types of next generation lithographic methods have been explored since optical lithography physical limitations has hindered the fabrication of high aspects ratio (HAR) structure on quartz substrates. In this research, the top-down fabrication approach was employed to fabricate microstructures on quartz substrate using Electron Beam Lithography (EBL) system,

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Jones, Richard G., Christopher K. Ober, Teruaki Hayakawa, Christine K. Luscombe, and Natalie Stingelin. "Terminology of polymers in advanced lithography (IUPAC Recommendations 2020)." Pure and Applied Chemistry 92, no. 11 (2020): 1861–91. http://dx.doi.org/10.1515/pac-2018-1215.

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AbstractAs increasingly smaller molecular materials and material structures are devised or developed for technological applications, the demands on the processes of lithography now routinely include feature sizes that are of the order of 10 nm. In reaching such a fine level of resolution, the methods of lithography have increased markedly in sophistication and brought into play 2terminology that is unfamiliar, on the one hand, to scientists tasked with the development of new lithographic materials or, on the other, to the engineers who design and operate the complex equipment that is required

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42

Wood, M. A. "Colloidal lithography and current fabrication techniques producing in-plane nanotopography for biological applications." Journal of The Royal Society Interface 4, no. 12 (2006): 1–17. http://dx.doi.org/10.1098/rsif.2006.0149.

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Substrate topography plays a vital role in cell and tissue structure and function in situ , where nanometric features, for example, the detail on single collagen fibrils, influence cell behaviour and resultant tissue formation. In vitro investigations demonstrate that nanotopography can be used to control cell reactions to a material surface, indicating its potential application in tissue engineering and implant fabrication. Developments in the catalyst, optical, medical and electronics industries have resulted in the production of nanopatterned surfaces using a variety of methods. The general

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43

Fitzgerald, A. G., and S. M. Potrous. "A study of the interaction of silver with amorphous chalcogenide films in the Scanning Electron Microscope." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 694–95. http://dx.doi.org/10.1017/s0424820100176605.

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The diffusion of silver in amorphous chalcogenides is the basis for high-resolution lithographic applications. Previous studies of the diffusion of silver on contact with chalcogenide films has been studied by Auger depth profiling and the effects of photodoping on chemical bonding have been studied by x-ray photoelectron spectroscopy. Electron lithographic effects have been studied in the transmission electron microscope.The objective of the investigation described here has been to determine the degree of diffusion of silver in the amorphous chalcogenides, As2S3, As2Se3, GeS and GeSe when the

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44

Wachulak, P., M. Marconi, A. Isoyan, et al. "Aspects of nanometer scale imaging with extreme ultraviolet (EUV) laboratory sources." Opto-Electronics Review 20, no. 1 (2012): 1–14. http://dx.doi.org/10.2478/s11772-012-0008-z.

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AbstractImaging systems with nanometer resolution are instrumental to the development of the fast evolving field of nanoscience and nanotechnology. Decreasing the wavelength of illumination is a direct way to improve the spatial resolution in photon-based imaging systems and motivated a strong interest in short wavelength imaging techniques in the extreme ultraviolet (EUV) region. In this review paper, various EUV imaging techniques, such as 2D and 3D holography, EUV microscopy using Fresnel zone plates, EUV reconstruction of computer generated hologram (CGH) and generalized Talbot self-imagin

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45

Cameron, James, John Amara, Jin Wuk Sung, et al. "Design and Development of Developable BARCs (DBARCs) for Advanced Lithographic Applications." Journal of Photopolymer Science and Technology 23, no. 5 (2010): 721–29. http://dx.doi.org/10.2494/photopolymer.23.721.

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46

Lundgren, Eric A. S., Rebecca Conybeare, Taylor J. Z. Stock, Neil J. Curson, Oliver Warschkow, and Steven R. Schofield. "Bismuth trichloride as a molecular precursor for silicon doping." Applied Physics Letters 122, no. 15 (2023): 151601. http://dx.doi.org/10.1063/5.0145772.

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Dopant impurity species can be incorporated into the silicon (001) surface via the adsorption and dissociation of simple precursor molecules. Examples include phosphine (PH3), arsine (AsH3), and diborane (B2H6) for the incorporation of phosphorus, arsenic, and boron, respectively. Through exploitation of precursor surface chemistry, the spatial locations of these incorporated dopants can be controlled at the atomic scale via the patterning of a hydrogen lithographic resist layer using scanning tunneling microscopy (STM). There is strong interest in the spatial control of bismuth atoms incorpor

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Swaminathan, Swathi, Mitchell Bullough, Qifei Li, Anhong Zhou, and Yue Cui. "Non-lithographic patterning of phage-displayed peptides with wrinkled elastomers." Journal of The Royal Society Interface 11, no. 91 (2014): 20130893. http://dx.doi.org/10.1098/rsif.2013.0893.

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The development of controlled patterning of phage (viruses) could expand opportunities for both fundamental studies and creating various materials platforms. Inducing the elastomeric instability of PDMS film provides a non-lithographic, tuneable, controlled method for generating micro/nanoscale wrinkle patterns. Phage display has emerged as a powerful method for selecting peptides that possess enhanced selectivity and binding affinity toward a variety of targets. In this report, we demonstrate the non-lithographic patterning of phage-displayed peptides with wrinkled elastomers. Our results sho

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Wengert, Nicolai, Marwène Nefzi, Peter Eberhard, and Bernhard Geuppert. "Dynamics in lithographic projection objectives." Multibody System Dynamics 30, no. 2 (2013): 233–45. http://dx.doi.org/10.1007/s11044-013-9344-0.

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Sadauskas, Modestas, Romualdas Trusovas, Evaldas Kvietkauskas, et al. "Advancing Nanoscale Copper Deposition Through Ultrafast-Laser-Activated Surface Chemistry." Nanomaterials 15, no. 11 (2025): 830. https://doi.org/10.3390/nano15110830.

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Direct-writing submicron copper circuits on glass with laser precision—without lithography, vacuum deposition, or etching—represents a transformative step in next-generation microfabrication. We present a high-resolution, maskless method for metallizing glass using ultrashort pulse Bessel beam laser processing, followed by silver ion activation and electroless copper plating. The laser-modified glass surface hosts nanoscale chemical defects that promote the in situ reduction of Ag+ to metallic Ag0 upon exposure to AgNO3 solution. These silver seeds act as robust catalytic and adhesion sites fo

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Schvartzman, M., A. Mathur, J. Hone, C. Jahnes, and S. J. Wind. "Plasma fluorination of carbon-based materials for imprint and molding lithographic applications." Applied Physics Letters 93, no. 15 (2008): 153105. http://dx.doi.org/10.1063/1.2944997.

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