Relevant bibliographies by topics / LNA

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'LNA'

Author: Grafiati
Published: 4 June 2021
Last updated: 8 February 2025

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Journal articles on the topic "LNA"

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Drais, Hayder Kadhim. "Transdermal Delivery of Lornoxicam Hybrid Nanogel: Design, Preparation, Characterization, and In-Vitro Diffusion Evaluation." Iraqi Journal of Industrial Research 10, no. 2 (October 20, 2023): 98–104. http://dx.doi.org/10.53523/ijoirvol10i2id289.

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Lornoxicam was practically water insoluble and a nonsteroidal anti-inflammatory therapeutic agent thus associated with gastrointestinal tract (GIT) side effects. Lipid polymer hybrid nanocarriers (LPHNs)-based transdermal nanogel of lornoxicam was formulated to increase solubility of lornoxicam and sustained lornoxicam release that lead to eliminate GIT related side effect, prolong therapeutic activity and improve patient compliance .The lornoxicam LPHNs formulations (LH1-LH6) were prepared by microwaves based method. The conventional gel of lornoxicam (G) was prepared by solvent diffusion method. The LH1-LH6 was entered to characterization processes that were later used as a base to prepare lornoxicam hybrid nanogel formulations (LN1-LN6). The LN1-LN6 was tested for various evaluations. It was found that all the LH1-LH6 were show nanosize globules, low polydispersity index and acceptable surface charge, entrapment efficiency and drug loading. LH3 was the most optimized LPHNs due had lower particle size and higher lornoxicam release.The evaluation processes indicate stable organoleptic properties, high homogeneity, and acceptable values of pH. The comparability profile of the lornoxicam release from the lornoxicam nanogel formulations (LN1-LN6) and conventional lornoxicam gel (G) was in the following descending order: LN3 > LN2> LN1 > LN6 > LN5 > LN4 > G. The characterization and evaluation processes highly support promise transdermal delivery system to decrease pain and inflammation in musculoskeletal diseases.
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Xia, Ning, Depeng Wu, Xia Li, Weili Teng, Xue Zhao, Haiyan Li, and Yingpeng Han. "Identification of quantitative trait loci underlying fatty acid content of soybean (Glycine max), including main, epistatic and QTL×environment effects across multiple environments." Crop and Pasture Science 68, no. 9 (2017): 842. http://dx.doi.org/10.1071/cp17241.

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The uses and nutritional value of soybean (Glycine max (L.) Merrill) oil are largely influenced by the levels and relative proportions in the seed of the five major fatty acids: oleic (OA), palmitic (PA), stearic (SA), linoleic (LLA), linolenic (LNA). The present study was undertaken to identify quantitative trait loci (QTLs) that are associated with fatty acid content (particularly OA) and to determine the effects of epistasis and the environment. The mapping population included 134 recombinant inbred lines (RILs) derived from soybean varieties Suinong10 and L-9. Phenotypic data of the two parents and their RILs were obtained at Harbin in 2013, 2014 and 2015. Nineteen QTLs associated with individual fatty acid content (six for OA, four for LNA, three for PA, two for SA, four for LLA) were identified. Twelve of these QTLs (four for OA, three for LNA, two for PA, one for SA, two for LLA) were detected with an additive main effect and/or additive × environment interaction effect in certain environments. Epistatic QTLs were identified for contents of OA (two QTLs), LNA (one QTL) and LLA (one QTL) in different environments, and which exhibited significant epistatic effects. Our observation of these additive and epistatic QTLs suggested that soybean possesses a complex network for fatty acid accumulation, which is valuable for marker-assisted selection.
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Rajwanshi, Vivek K., Anders E. Håkansson, Ravindra Kumar, and Jesper Wengel. "High-affinity nucleic acid recognition using ‘LNA’ (locked nucleic acid, β-D-ribo configured LNA), ‘xylo-LNA’ (β-D-xylo configured LNA) or ‘α-L-LNA’ (α-L-ribo configured LNA)." Chemical Communications, no. 20 (1999): 2073–74. http://dx.doi.org/10.1039/a906713b.

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Wengel, Jesper, Birte Vester, Lars Bo Lundberg, Stephen Douthwaite, Mads D. Sørensen, B. Ravindra Babu, Michael J. Gait, Andrey Arzumanov, Michael Petersen, and Jakob T. Nielsen. "LNA and α-L-LNA: Towards Therapeutic Applications." Nucleosides, Nucleotides and Nucleic Acids 22, no. 5-8 (October 2003): 601–4. http://dx.doi.org/10.1081/ncn-120021963.

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Kumar, Ravindra, Sanjay K. Singh, Alexei A. Koshkin, Vivek K. Rajwanshi, Michael Meldgaard, and Jesper Wengel. "The first analogues of LNA (Locked Nucleic Acids): Phosphorothioate-LNA and 2′-thio-LNA." Bioorganic & Medicinal Chemistry Letters 8, no. 16 (August 1998): 2219–22. http://dx.doi.org/10.1016/s0960-894x(98)00366-7.

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Tsai, Ching-Han, Chun-Yi Lin, Ching-Piao Liang, Shyh-Jong Chung, and Jenn-Hwan Tarng. "Switched Low-Noise Amplifier Using Gyrator-Based Matching Network for TD-LTE/LTE-U/Mid-Band 5G and WLAN Applications." Applied Sciences 11, no. 4 (February 6, 2021): 1477. http://dx.doi.org/10.3390/app11041477.

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This paper presents a triple-band low-noise amplifier (LNA) fabricated using a 0.18 μm Complementary Metal-Oxide-Semiconductor (CMOS) process. The LNA uses a double-peak load network with a switched component to accomplish the triple-band operation. Moreover, noise reduction using a substrate resistor to ameliorate the noise performance is presented. Noise reduction of 1.5 dB can be achieved at 2.5 GHz without additional dc power and extra manufacturing costs. An input matching technique is realized simultaneously using a gyrator-based feedback topology. The triple-band LNA can be realized by using a dual-band input network with a switched matching mechanism. The target frequencies of the triple-band LNA are 2.3–2.7 GHz, 3.4–3.8 GHz, and 5.1–5.9 GHz, covering the operating frequency bands of time-division long-term evolution (TD-LTE), mid-band Fifth-generation (5G), LTE-unlicensed (LTE-U) band, and Wireless LAN (WLAN) technology. The measured power gains and noise figures at 2.5, 3.5, and 5.2 GHz are 12.3, 15.3, and 13.1 dB and 2.3, 2.2, and 2.6 dB, respectively.
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Rajwanshi, Vivek K., Anders E. Haakansson, Ravindra Kumar, and Jesper Wengel. "ChemInform Abstract: High-Affinity Nucleic Acid Recognition Using ′LNA′ (Locked Nucleic Acid, β-D-ribo Configured LNA), ′xylo-LNA′ (β-D-xylo Configured LNA) or ′α-L-LNA′ (α-L-ribo Configured LNA)." ChemInform 31, no. 5 (June 11, 2010): no. http://dx.doi.org/10.1002/chin.200005250.

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Frieden, Miriam, Henrik F. Hansen, and Troels Koch. "Nuclease Stability of LNA Oligonucleotides and LNA-DNA Chimeras." Nucleosides, Nucleotides and Nucleic Acids 22, no. 5-8 (October 2003): 1041–43. http://dx.doi.org/10.1081/ncn-120022731.

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Singh, Rashmi, and Rajesh Mehra. "Low Noise Amplifier using Darlington Pair At 90nm Technology." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 4 (August 1, 2018): 2054. http://dx.doi.org/10.11591/ijece.v8i4.pp2054-2062.

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<p class="Abstract"><span>The demand of low noise amplifier (LNA) has been rising in today’s communication system. LNA is the basic building circuit of the receiver section satellite. The design concept demonstrates the design trade off with NF, gain, power consumption. This paper reports on with analysis of wideband LNA. This paper shows the schematic of LNA by using Darlington pair amplifier. This LNA has been fabricated on 90nm CMOS process. This paper is focused on to make comparison of three stage and single stage LNA. Here, the phase mismatch between these patameters is quantitavely analyzed to study the effect on gain and noise figure (NF). In this paper, single stage LNA has shown the 23 dB measured gain, while the three stages LNA has demonstrated 29 dB measured gain. Here, LNA designed using darlington pair shows low NF of 3.3-4.8 dB, which comparable to other reported single stage LNA designs and appreciably low compared to the three stages LNA. Hence, findings from this paper suggest the use of single stage LNA designed using Darlington pair in transceiver satellite applications.</span></p>
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Muhamad, Maizan, Norhayati Soin, and Harikrishnan Ramiah. "Linearity improvement of differential CMOS low noise amplifier." Indonesian Journal of Electrical Engineering and Computer Science 14, no. 1 (April 1, 2019): 407. http://dx.doi.org/10.11591/ijeecs.v14.i1.pp407-412.

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<p>This paper presents the linearity improvement of differential CMOS low noise amplifier integrated circuit using 0.13um CMOS technology. In this study, inductively degenerated common source topology is adopted for wireless LAN application. The linearity of the single-ended LNA was improved by using differential structures with optimum biasing technique. This technique achieved better LNA and linearity performance compare with single-ended structure. Simulation was made by using the cadence spectre RF tool. Consuming 5.8mA current at 1.2V supply voltage, the designed LNA exhibits S<sub>21</sub> gain of 18.56 dB, noise figure (NF) of 1.85 dB, S<sub>11</sub> of −27.63 dB, S<sub>22</sub> of -34.33 dB, S<sub>12</sub> of −37.09 dB and IIP3 of -7.79 dBm.</p>
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Dissertations / Theses on the topic "LNA"

1

Panahi, Mina. "LNA considerations for square kilometre array." Thesis, University of Manchester, 2012. https://www.research.manchester.ac.uk/portal/en/theses/lna-considerations-for-square-kilometre-array(241ee45f-f603-40f1-8602-bae157f1aefa).html.

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This thesis describes the design of low noise amplifier (LNA) for the international Square Kilometre Array (SKA) project. LNAs in radio astronomy receivers play an important role of amplifying very weak signals from the Universe and the significance of the LNAs become more crucial in the SKA which is the largest and most sensitive radio telescope in the World. The aperture array (AA) system proposed for SKA is projected to deploy tens of millions of LNAs in a receiver system to survey large areas of the sky simultaneously over the frequency bands of 70-450MHz and 400-1400MHz. Hence LNA power efficiency has a significant implication in the SKA AA system due to the large number of the LNAs required. This thesis describes the design of 9 LNAs for the SKA. Seven LNAs with very low power consumption were designed, fabricated and characterised for SKA AA system using MIC technology by employing COTS components. Single ended and differential to single ended configurations were used for the lower frequency band of SKA AA system. Low noise figures (noise temperatures) of 0.6dB (43K) were achieved with high gain of more than 30dB at a power consumptions of less than 25mW for lower frequency band of AA. The LNAs designed to perform at 400-1400MHz have a very low power consumption of 28mW with an average noise figure (noise temperature) of 0.45dB (32K). Two MMIC LNAs based on low noise TQP13N pHEMT process of TriQuint Semiconductors with gate length of 130nm were designed for the low (0.7-1.8GHz) and high (8-10GHz) frequency ends of the SKA. The packaging and housing solutions of the SKA LNAs were implemented. The work described in this thesis shows low noise figures (noise temperatures) with high gains are achieved at a very low power consumption of less than 30mW for the MIC LNAs in the SKA AA system by using commercially available components.
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Muhammad, Wasim. "CMOS LNA Design for Multi-Standard Applications." Thesis, Linköping University, Department of Electrical Engineering, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-7841.

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This thesis discusses design of narrowband low noise amplifiers for multi¬standard applications. The target of this work is to design a low noise ampli¬fier(LNA) for DCS1800 and Bluetooth standard frequency bands. Various designs for narrowband multi-standard LNAs have been studied and a new design for tunable multi-standard LNA has been presented and designed using accumulation mode MOS varactors.

As this design includes on-chip spiral inductors, the design, modelling and layout of on-chip inductors have been discussed briefly. The tool used for this purpose is ASITIC.

Also ESD protection techniques for RF circuits and their effect on LNA per¬formance has been discussed.

Finally fully differential LNA has been designed in O.35um AMS thick metal CMOS process using Cadence SpectreRF. The design also includes ESD pro¬tection at the input of LNA.

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Ondráš, Michal. "Anténa a LNA pro vícepásmový přijímač GNSS." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2019. http://www.nusl.cz/ntk/nusl-400543.

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This project describesa microwave antenna for GNSS and low noise amplifier. Mikrostrip antenna is a modern type of antenna. This mikrostrip antenna is Dual – band antenna with circual polarization. The thesis describes how to make anantenna, what a circular polarization is, whata patch antenna is and what GNSS is. Low noise amplifier amplifies the antenna output signal.
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Guerreiro, Gabriel Rebello. "Projeto de indutores ativos para RF." Universidade de São Paulo, 2011. http://www.teses.usp.br/teses/disponiveis/18/18155/tde-14022012-093949/.

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Indutores Ativos são circuitos que quando utilizados se mostram como uma opção viável para melhorar o aproveitamento de área do chip e o fator de qualidade do indutor, comparado com indutor passivo, além de possibilitar o ajuste de parâmetros. Neste trabalho foram estudadas três topologias e abordagens encontradas na literatura para indutores ativos: indutor ativo simples, indutor ativo cascode, indutor ativo com resistência de realimentação. Propomos uma técnica para garantir que o indutor ativo não apresente pólos com parte real positiva, quando conectado a um circuito RC externo, através do cancelamento entre um pólo e um zero. Propomos também uma nova abordagem de projeto para a topologia indutor ativo com resistência de realimentação a qual chamamos de indutor ativo com baixa resistência de realimentação. Para estudo de aplicabilidade foi projetado um LNA (Low Noise Amplifier) utilizando a abordagem de projeto proposta. O amplificador deve atender requisitos de ganho, frequência de operação, impedância de entrada, consumo de potência, figura de ruído além de estabilidade para cargas de saída (pólos com parte real sempre positiva), utilizando o indutor ativo com baixa resistência de realimentação.
Active inductors are circuits that when used prove to be a viable option to improve chip area usage and the inductor\'s quality factor, compared to the passive inductor, while also allowing parameter adjustment. This work studies three topologies and approaches found in literature for active inductors: simple active inductor, cascode active inductor, active inductor with feedback resistance. We propose a technique to guarantee that the active inductor doesn\'t present poles with a positive real part, when connected to an external RC circuit, through cancelling between a pole and a zero. We also propose a new project approach for the topology of the active inductor with feedback resistance which we call low feedback resistance active inductor. To assess the applicability, a LNA (Low Noise Amplifier) was projected using the proposed project approach. The amplifier must meet the requirements regarding gain, operation frequency, input impedance, power consumption, noise figure and also stability for output loads (poles with an always negative real part), using the low feedback resistance active inductor.
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Cherukumudi, Dinesh. "Ultra-Low Noise and Highly Linear Two-Stage Low Noise Amplifier (LNA)." Thesis, Linköpings universitet, Elektroniska komponenter, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-71355.

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An ultra-low noise two-stage LNA design for cellular basestations using CMOS is proposed in this thesis work.  This thesis is divided into three parts. First, a literature survey which intends to bring an idea on the types of LNAs available and their respective outcomes in performances, thereby analyze how each design provides different results and is used for different applications. In the second part, technology comparison for 0.12µm, 0.18µm, and 0.25µm technologies transistors using the IBM foundry PDKs are made to analyze which device has the best noise performance. Finally, in the third phase bipolar and CMOS-based two-stage LNAs are designed using IBM 0.12µm technology node, decided from the technology comparison. In this thesis a two-stage architecture is used to obtain low noise figure, high linearity, high gain, and stability for the LNA. For the bipolar design, noise figure of 0.6dB, OIP3 of 40.3dBm and gain of 26.8dB were obtained. For the CMOS design, noise figure of 0.25dB, OIP3 of 46dBm and gain of 26dB were obtained. Thus, the purpose of this thesis is to analyze the LNA circuit in terms of design, performance, application and various other parameters. Both designs were able to fulfill the design goals of noise figure < 1 dB, OIP3 > 40 dBm, and gain >18 dB.
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Ortigueira, Eduardo José Resende. "A combined LNA-oscillator-mixer for biomedical applications." Master's thesis, Faculdade de Ciências e Tecnologia, 2011. http://hdl.handle.net/10362/6320.

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Elyasi, Hedieh. "Design of a Highly Linear 24-GHz LNA." Thesis, Virginia Tech, 2016. http://hdl.handle.net/10919/81431.

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The increasing demand for high data rate devices and many applications in short range high speed communication, attract many RF IC designers to work on 24-GHz transceiver design. The Federal Communication Commission (FCC) also dedicates the unlicensed 24-GHz band for industrial, science, and medical applications to overcome the interference in overcrowded communications and have higher output signal power. LNA is the first building of the receiver and is a very critical building block for the overall receiver performance. The total NF and sensitivity of the receiver mainly depends on the LNAs NF that mandates a very low NF LNA design. Depending on its gain, the noise figure of the next stages can relax. However, the high gain of an LNA enforces the next stages to be more linear since they suffer from larger signal at their input stage and can get saturated easily. Apparently, designing high gain, low noise, and highly linear LNA is very stimulating. In this thesis, a wideband LNA with low noise figure and high linearity has been designed in 8XP 0.13-um SiGe BiCMOS IBM technology. The highlight of this design is proposing the peaking technique, which results in considerable linearity improvement. Loading the LNA with class AB amplifier, power gain experiences a peaking in high input signal swing levels. The next stager after the LNA is the buffer to provide isolation between the LNA and mixer, and also avoid loading of the LNA from the mixer. Instead of using popular emitter follower architecture, another circuit is proposed to have higher gain and linearity. This buffer has two separate out of phase inputs, coming from the LNA and are combined constructively at the output of the buffer. Since the frequency of this design is high, electromagnetic (EM) simulation for pads, interconnects, transmission lines, inductors, and coplanar transmission lines has been completed using Sonnet cad tool to consider all the parasitic and coupling effects. Considering all the EM effects, the LNA has 15 dB gain with 2.9 dB NF and -8.8 dBm input 1-dB compression point. The designed LNA is wideband, covering the frequency range of 12-GHz to 31-GHz. However, the designed LNA, has the capability of having higher gain at the expense of lower linearity and narrower frequency band using different control voltage. As an example peak gain of 29.3 dB at the 3-dB frequency range of 23.8 to 25.8-GHz can be achieved, having 2.3 dB noise figure and -17 dBm linearity.
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Janse, van Rensburg Christo. "A SiGe BiCMOS LNA for mm-wave applications." Diss., University of Pretoria, 2012. http://hdl.handle.net/2263/26501.

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A 5 GHz continuous unlicensed bandwidth is available at millimeter-wave (mm-wave) frequencies around 60 GHz and offers the prospect for multi gigabit wireless applications. The inherent atmospheric attenuation at 60 GHz due to oxygen absorption makes the frequency range ideal for short distance communication networks. For these mm-wave wireless networks, the low noise amplifier (LNA) is a critical subsystem determining the receiver performance i.e., the noise figure (NF) and receiver sensitivity. It however proves challenging to realise high performance mm-wave LNAs in a silicon (Si) complementary metal-oxide semiconductor (CMOS) technology. The mm-wave passive devices, specifically on-chip inductors, experience high propagation loss due to the conductivity of the Si substrate at mm-wave frequencies, degrading the performance of the LNA and subsequently the performance of the receiver architecture. The research is aimed at realising a high performance mm-wave LNA in a Si BiCMOS technology. The focal points are firstly, the fundamental understanding of the various forms of losses passive inductors experience and the techniques to address these issues, and secondly, whether the performance of mm-wave passive inductors can be improved by means of geometry optimising. An associated hypothesis is formulated, where the research outcome results in a preferred passive inductor and formulates an optimised passive inductor for mm-wave applications. The performance of the mm-wave inductor is evaluated using the quality factor (Q-factor) as a figure of merit. An increased inductor Q-factor translates to improved LNA input and output matching performance and contributes to the lowering of the LNA NF. The passive inductors are designed and simulated in a 2.5D electromagnetic (EM) simulator. The electrical characteristics of the passive structures are exported to a SPICE netlist which is included in a circuit simulator to evaluate and investigate the LNA performance. Two LNAs are designed and prototyped using the 13μ-m SiGe BiCMOS process from IBM as part of the experimental process to validate the hypothesis. One LNA implements the preferred inductor structures as a benchmark, while the second LNA, identical to the first, replaces one inductor with the optimised inductor. Experimental verification allows complete characterization of the passive inductors and the performance of the LNAs to prove the hypothesis. According to the author's knowledge, the slow-wave coplanar waveguide (S-CPW) achieves a higher Q-factor than microstrip and coplanar waveguide (CPW) transmission lines at mm-wave frequencies implemented for the 130 nm SiGe BiCMOS technology node. In literature, specific S-CPW transmission line geometry parameters have previously been investigated, but this work optimises the signal-to-ground spacing of the S-CPW transmission lines without changing the characteristic impedance of the lines. Optimising the S-CPW transmission line for 60 GHz increases the Q-factor from 38 to 50 in simulation, a 32 % improvement, and from 8 to 10 in measurements. Furthermore, replacing only one inductor in the output matching network of the LNA with the higher Q-factor inductor, improves the input and output matching performance of the LNA, resulting in a 5 dB input and output reflection coefficient improvement. Although a 5 dB improvement in matching performance is obtained, the resultant noise and gain performance show no significant improvement. The single stage LNAs achieve a simulated gain and NF of 13 dB and 5.3 dB respectively, and dissipate 6 mW from the 1.5 V supply. The LNA focused to attain high gain and a low NF, trading off linearity and as a result obtained poor 1 dB compression of -21.7 dBm. The LNA results are not state of the art but are comparable to SiGe BiCMOS LNAs presented in literature, achieving similar gain, NF and power dissipation figures.
Dissertation (MEng)--University of Pretoria, 2012.
Electrical, Electronic and Computer Engineering
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Belmas, Francois. "Etude de structures innovantes pour la réalisation d'amplificateur RF faible bruit sans inductance et à très faible consommation." Thesis, Grenoble, 2013. http://www.theses.fr/2013GRENT011/document.

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La dernière décennie à vu l’explosion des technologies de communication sans fils. Les normes se sont multipliées de sorte que les fonctionnalités GSM, GPS, WIFI, Bluetooth et autres cohabitent parfois au sein du même terminal. Les réseaux de capteurs (Wireless area network WSN) incluant les réseaux de capteur WPAN (Wireless Personnel Area Network) seront amenés à jouer un rôle important dans l’environnement de demain au même titre que les normes sans fils grand public que nous venons de mentionner. Le déploiement de ces capteurs à grande échelle a été rendu possible par la réduction du coût de leur fabrication via la miniaturisation des procédés de fabrication propres à la technologie CMOS. Cependant, la consommation énergétique de ces circuits doit être très réduite permettant ainsi de fonctionner dans le cas où ces mêmes capteurs sont associés à une batterie compacte embarquée de durée de vie réduite. A défaut il serait nécessaire de pouvoir se contenter de l’énergie récupérable - en quantité limité - disponible dans l'environnement direct de ces capteurs. Cette contrainte de consommation électrique réduite ainsi que la nécessité de profiter au maximum de la miniaturisation du procédé CMOS amène à considérer la conception de circuits radio sous l'angle du faible encombrement surfacique et de la consommation statique la plus faible possible. Ces contraintes sont parfois contradictoires avec les architectures classiques connues de ces circuits radio constituants les capteurs déployés.es travaux présentés dans le cadre de cette thèse s’attachent à proposer des solutions afin de répondre à ces critères de consommation et de coût. Nous nous sommes intéressés au cas des amplificateurs faible bruit (Low Noise Amplifier – LNA) et à la possibilité de réaliser ce composant critique pour le lien RF sans utiliser d’inductance intégrées tout en limitant au maximum la consommation électrique. Plusieurs solutions innovantes ont été étudiées afin de répondre à cet objectif. Ces travaux nous ont conduit à la réalisation de plusieurs prototypes de circuits en technologie CMOS 65nm et 130nm qui permettent de comprendre les limites et les avantages d’une telle approche. La première partie présentera une première approche consistant à émuler une inductance à l’aide de composants actifs et ainsi à résoudre le problème de l’encombrement propre au inductance passives. Nous verrons en quoi cette approche peut présenter des limites pratiques pour une application radio. La seconde partie présentera la réalisation d’un LNA très basse consommation et large bande qui n’utilise pas d’inductance et présentant des performances améliorées vis à vis des topologies connues de LNA à faible consommation. Nous conclurons ensuite par les perspectives ouvertes suite à ces travaux et les autres approches possibles pour répondre aux contraintes de la basse consommation et du faible coût
During the past decade the intense development of wireless technologies standard such as WIFI, GSM or Bluetooth reshaped the connectivity environment of any technology customers Among those standards, Wireless Sensor Networks (WSN) and Wireless Personal Area Network (WPAN) are expected to play a key role in our future environments. The large scale spreading of such sensors has been enabled through the strong cost optimization of modern CMOS technologies. The autonomy improvement of such sensor is however a primary concern to allow any kind of remote operation within the limitation of battery life. Even though the emerging energy harvesting domain offer energy friendly environments for such sensor, the electrical autonomy remain as a tight challenge to address. Those requirements of autonomy along with the context of CMOS technology development pushes sometimes fundamental contradictions between circuit's miniaturization and decreased power consumption. In this work, we propose solutions to address simultaneously those autonomy-miniaturization requirements. The study presented here is focused on Low Noise Amplifiers (LNA) and more precisely on the specific case of inductorless design of LNA. Several innovative solutions has been proposed and realized in 65nm & 130nm CMOS technologies in order to highlight the pros and the cons of such design approach. First part of this work is focused on the design of an active inductance to address the area occupation of narrow band system using inductors. We'll explain why such approach rises fundamental limits for radio application. Second part details the design of an ultra low power broadband LNA without inductors. The proposed circuits enable significant improvement in performance tradeoffs for such low power consumption in comparison with known design techniques. We will conclude with general perspectives and other possible design approaches
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Alvarado, Miguel A. "A Ka-band switch-LNA MMIC for radiometry applications." Connect to this title online, 2008. http://scholarworks.umass.edu/theses/79/.

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Books on the topic "LNA"

1

Schlegel, Hans Gu nter. Mikrobiologia ogo lna. 2nd ed. Warszawa: Wydawnictwo Naukowe PWN, 2003.

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Tomaszewski, Tadeusz, and Ida Kurcz. Psychologia ogo lna. Warszawa: Wydaw. Naukowe PWN, 1992.

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Classics, Institute of Tibetan, ed. Rdzogs rim lim lna gsal sgron. Ldi-li: Bod-kyi Gtsug-lag Źib-dpyod-khaṅ nas dpar skrun źus, 2012.

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Pac-Pomarnacka, Alicja. Mechanika ogo lna z przyk¿adami obliczen. Wroc¿aw: Wydaw. Akademii Rolniczej, 2004.

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5

Leroux, Paul, and Michiel Steyaert. LNA-ESD Co-Design for Fully Integrated CMOS Wireless Receivers. Boston, MA: Springer US, 2005. http://dx.doi.org/10.1007/1-4020-3191-2.

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Sadakierska-Chudy, Anna. Genetyka ogo lna: Skrypt do c wiczen dla studento w biologii. Torun: Uniwersytet Miko¿aja Kopernika, 2004.

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Center, Buddhist Digital Resource. Dmar khrid dug lna ran grol gyi khrid rim: A collection of instructions from the dmar khrid dug lna rang grol cycle of bon po teachings. Dolanji, dist. solan: Tibetan bonpo monastic community, 1985.

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Janusz, Wasiak. Chirurgia ogo lna: Skrypt dla studento w IV roku Wydzia¿u Lekarskiego : praca zbiorowa. ¿o dz: Akademia Medyczna, 2001.

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Zofia, Kasprowicz. Zbio r zadan z geometrii wykres lnej. Bydgoszcz: Wydawnictwa Uczelniane Akademii Techniczno-Rolniczej, 2002.

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Center, Buddhist Digital Resource. Bka' than sde lna: Accounts of the deeds of gods, kings, queens, ministers, and translators during the glorious period of the royal dynasty of tibet. Darjeeling, w.b., india: Konchhog lhadripa, 1985.

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Book chapters on the topic "LNA"

1

Hüls, Ewald, and Hans-Jörg Oestern. "LNA." In Die ICE-Katastrophe von Eschede, 188–94. Berlin, Heidelberg: Springer Berlin Heidelberg, 1999. http://dx.doi.org/10.1007/978-3-642-60177-4_28.

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Nordholt, Ernst H. "Structured LNA design." In Analog Circuit Design, 47–76. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/0-306-47951-6_3.

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Yuan, Jiann-Shiun. "LNA Design for Variability." In CMOS RF Circuit Design for Reliability and Variability, 55–69. Singapore: Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-0884-9_7.

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Fernandes, Miguel D., and Luis B. Oliveira. "Wideband Cascode Balun-LNA." In SpringerBriefs in Electrical and Computer Engineering, 41–58. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-18920-8_4.

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Youssef, Ahmed A., and James Haslett. "Wideband CMOS LNA Design Techniques." In Nanometer CMOS RFICs for Mobile TV Applications, 15–57. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-8604-4_2.

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Iyer, Makesh, and T. Shanmuganantham. "Optimum LNA for WAVE Application." In Lecture Notes in Electrical Engineering, 627–39. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1906-8_64.

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Rahman, Mustafijur, and Ramesh Harjani. "Dual-Path Noise Cancelling LNA." In Analog Circuits and Signal Processing, 41–56. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-21333-6_4.

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Cheong, Chee Han, Norlaili Mohd. Noh, and Harakrishnan Ramiah. "A Wideband LNA for Cognitive Radios." In Lecture Notes in Electrical Engineering, 427–33. Singapore: Springer Singapore, 2014. http://dx.doi.org/10.1007/978-981-4585-42-2_49.

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Havelda, Zoltán. "In Situ Detection of miRNAs Using LNA Probes." In Methods in Molecular Biology, 127–36. Totowa, NJ: Humana Press, 2009. http://dx.doi.org/10.1007/978-1-60327-005-2_9.

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Yu, Yikun, Peter G. M. Baltus, and Arthur H. M. van Roermund. "A 60GHz Active Phase Shifter Integrated with LNA." In Integrated 60GHz RF Beamforming in CMOS, 59–80. Dordrecht: Springer Netherlands, 2011. http://dx.doi.org/10.1007/978-94-007-0662-0_6.

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Conference papers on the topic "LNA"

1

Varonen, Mikko, Dristy Parveg, Lassi Lehtisyrjä, Hannu Sipola, and Jan Saijets. "Cryogenic Single-Chip Multi-Channel LNA." In 2024 19th European Microwave Integrated Circuits Conference (EuMIC), 363–66. IEEE, 2024. http://dx.doi.org/10.23919/eumic61603.2024.10732334.

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Liu, Huazhu, and Qianhua He. "2.4 GHz CMOS LNA for Wireless LAN Application." In 2008 Global Symposium on Millimeter Waves (GSMM 2008). IEEE, 2008. http://dx.doi.org/10.1109/gsmm.2008.4534604.

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Schmid, Ulf, Rolf Reber, Patrick Schuh, and Martin Oppermann. "Robust wideband LNA designs." In 2014 9th European Microwave Integrated Circuits Conference (EuMIC). IEEE, 2014. http://dx.doi.org/10.1109/eumic.2014.6997823.

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Lehmeyer, Bernhard, Michel T. Ivrlac, and Josef A. Nossek. "LNA noise parameter measurement." In 2015 European Conference on Circuit Theory and Design (ECCTD). IEEE, 2015. http://dx.doi.org/10.1109/ecctd.2015.7300071.

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Van-Hoang Do, V. Subramanian, and G. Boeck. "60 GHz SiGe LNA." In 2007 14th IEEE International Conference on Electronics, Circuits and Systems (ICECS '07). IEEE, 2007. http://dx.doi.org/10.1109/icecs.2007.4511213.

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Xin Wang, Lin Lin, Albert Wang, Li-Wu Yang, Xiaokang Guan, Guang Chen, Hongyi Chen, Yumei Zhou, Hainan Liu, and Bin Zhao. "ESD-sensitive LNA design." In Exhibition. IEEE, 2008. http://dx.doi.org/10.1109/apemc.2008.4559835.

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Li, Chaojiang, Omar El-Aassar, Arvind Kumar, Myra Boenke, and Gabriel M. Rebeiz. "LNA Design with CMOS SOI Process-l.4dB NF K/Ka band LNA." In 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018. IEEE, 2018. http://dx.doi.org/10.1109/mwsym.2018.8439132.

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Toofan, Siroos, Adib Abrishamifar, Abdolreza Rahmati, Mariagrazia Graziano, G. Roientan Lahiji, and S. Amir Moniri. "A 5.5-GHz 3mW LNA and inductive degenerative CMOS LNA noise figure calculation." In 2008 International Conference on Microelectronics - ICM. IEEE, 2008. http://dx.doi.org/10.1109/icm.2008.5393535.

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Zhang Qian, Li Wenyuan, Wang Zhigong, Qian Cheng, and Zhang Xichang. "2.4GHz WLAN D-pHEMT LNA." In 2009 International Conference on Advanced Technologies for Communications (ATC 2009). IEEE, 2009. http://dx.doi.org/10.1109/atc.2009.5349601.

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Shen Liu, Donglin Su, and Huadong Guo. "The harmonic suppression of LNA." In 2008 8th International Symposium on Antennas, Propagation and EM Theory. IEEE, 2008. http://dx.doi.org/10.1109/isape.2008.4735427.

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Reports on the topic "LNA"

1

ZHAO, D., and P. OCONNOR. DESIGN OF 2.4 GHZ CMOS DIRECT CONVERSION LNA AND MIXER COMBINATION FOR WIRLESS DATA LINK TRANSCEIVER. Office of Scientific and Technical Information (OSTI), April 2002. http://dx.doi.org/10.2172/794023.

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Tokiniaina, Ranaivosamoelina, and Rasolohery Hasiniavo. L4A: Guide pour les utilisateurs de la tablette et de la plateforme FAD. EdTech Hub, September 2024. https://doi.org/10.53832/edtechhub.1066.

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Liu, Songqi. Mixture Models: From Latent Classes/Profiles to Latent Growth, Transitions, and Multilevel Mixture Models. Instats Inc., 2022. http://dx.doi.org/10.61700/ky72m8g8cc8x2469.

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Abstract:
This seminar introduces mixture modeling and explores its application in applied psychology research and beyond. Topics and worked examples include latent class analysis (LCA), latent profile analysis (LPA), LCA/LPA with covariates, multilevel LCA/LPA, growth mixture modeling (GMM), and latent transition analysis (LTA). A certificate of completion is provided at the conclusion of the seminar. For European PhD students, the seminar offers 2 ECTS Equivalent point.
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mann, Douglas. LNG measurement :. Gaithersburg, MD: National Bureau of Standards, 1986. http://dx.doi.org/10.6028/nbs.ir.85-3028.

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Henderson, James, and Vitaly Yermakov. Russian LNG. Oxford Institute for Energy Studies, November 2019. http://dx.doi.org/10.26889/9781784671501.

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Jamieson, Matthew. LNG Loading. Office of Scientific and Technical Information (OSTI), January 2023. http://dx.doi.org/10.2172/1962428.

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Jamieson, Matthew. LNG Regasification. Office of Scientific and Technical Information (OSTI), January 2023. http://dx.doi.org/10.2172/1962427.

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Jamieson, Matthew. LNG Unloading. Office of Scientific and Technical Information (OSTI), January 2023. http://dx.doi.org/10.2172/1962507.

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Rivers, Thomas. LHA 6 America Class Amphibious Assault Ship (LHA 6). Fort Belvoir, VA: Defense Technical Information Center, November 2015. http://dx.doi.org/10.21236/ad1019496.

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Skone, Timothy J. LNG Liquefaction, Operation. Office of Scientific and Technical Information (OSTI), October 2010. http://dx.doi.org/10.2172/1509078.

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