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Journal articles on the topic 'Low effective mass channel material transistors'

Author: Grafiati
Published: 6 September 2023

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1

van Fraassen, Niels C. A., Sanggil Han, Kham Niang, and Andrew J. John Flewitt. "(Invited) Achieving Lower Power Logic Using P-Type Metal Oxide Thin Film Transistors." ECS Meeting Abstracts MA2022-02, no. 35 (2022): 1267. http://dx.doi.org/10.1149/ma2022-02351267mtgabs.

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Thin film transistors (TFTs) have enabled the active matrix displays that are a ubiquitous part of everyday life, from mobile phones and tablets through to desktop monitors and home televisions. They are used in the circuit at each pixel over the display as they can be fabricated for relatively low cost with excellent uniformity at low temperatures over large areas on glass substrates. These pixel circuits only require either n-channel or p-channel enhancement mode TFTs. However, there has long been a desire to integrate the display driver electronics onto the display panel as an alternative t
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2

Yen, Te Jui, Albert Chin, Weng Kent Chan, Hsin-Yi Tiffany Chen, and Vladimir Gritsenko. "Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor." Nanomaterials 12, no. 2 (2022): 261. http://dx.doi.org/10.3390/nano12020261.

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High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm2/V·s, even for SnO TFTs with a unique single-hole band and a small hole effective mass. In this paper, we demonstrate a high-performance GeSn pTFT with a high field-effect hole mobility (μFE), of 41.8 cm2/V·s; a sharp turn-on subthreshold slope (SS), of 311 mV/dec, for low-voltage operation; and a large on-current/off-current (ION/IOFF) value, of 8.9 ×
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3

Pooja, Pheiroijam, Chun Che Chien, and Albert Chin. "Superior High Transistor’s Effective Mobility of 325 cm2/V-s by 5 nm Quasi-Two-Dimensional SnON nFET." Nanomaterials 13, no. 12 (2023): 1892. http://dx.doi.org/10.3390/nano13121892.

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This work reports the first nanocrystalline SnON (7.6% nitrogen content) nanosheet n-type Field-Effect Transistor (nFET) with the transistor’s effective mobility (µeff) as high as 357 and 325 cm2/V-s at electron density (Qe) of 5 × 1012 cm−2 and an ultra-thin body thickness (Tbody) of 7 nm and 5 nm, respectively. At the same Tbody and Qe, these µeff values are significantly higher than those of single-crystalline Si, InGaAs, thin-body Si-on-Insulator (SOI), two-dimensional (2D) MoS2 and WS2. The new discovery of a slower µeff decay rate at high Qe than that of the SiO2/bulk-Si universal curve
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Lee, Dong Hun, Yuxuan Zhang, Kwangsoo No, Han Wook Song, and Sunghwan Lee. "(Digital Presentation) Multimodal Encapsulation of p-SnOx to Engineer the Carrier Density for Thin Film Transistor Applications." ECS Meeting Abstracts MA2022-02, no. 15 (2022): 821. http://dx.doi.org/10.1149/ma2022-0215821mtgabs.

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It has been challenging to synthesize p-type SnOx (1≤x<2) and engineer the electrical properties such as carrier density and mobility due to the narrow processing window and the localized oxygen 2p orbitals near the valence band. We recently reported on the processing of p-type SnOx and an oxide-based p-n heterostructures, demonstrating high on/off rectification ratio (>103), small turn-on voltage (<0.5 V), and low saturation current (~1×10-10 A)1. In order to further understand the p-type oxide and engineer the properties for various electronic device applications, it is important to
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5

Tong, Shi Wun, and Man-Fai Ng. "(Digital Presentation) Scalable Growth of Transition Metal Dichalcogenides for Next-Generation Nanoelectronics." ECS Meeting Abstracts MA2022-02, no. 36 (2022): 1343. http://dx.doi.org/10.1149/ma2022-02361343mtgabs.

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Alternative channel materials for future ultra-scaled electronic devices have been intensively pursued nowadays since the feature size of silicon-based transistors has been scaled down to their physical limit. Atomically-thin semiconducting transitional metal dichalcogenides (TMDCs) including WS2, MoS2, WSe2, MoSe2, e. have shown a lot of unique properties compared to their bulk crystals, such as indirect-to-direct bandgap transitions, strong spin-orbit coupling and valley polarization. In particular, monolayer WS2 has shown the highest theoretical room temperature electron mobility among othe
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Choy, JUN-HO, Valeriy Sukharev, Armen Kteyan, Stephane Moreau, and Catherine Brunet-Manquat. "(Invited, Digital Presentation) Advanced Methodology for Assessing Chip Package Interaction Induced Stress Effects on Chip Performance and Reliability." ECS Meeting Abstracts MA2022-02, no. 17 (2022): 846. http://dx.doi.org/10.1149/ma2022-0217846mtgabs.

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In IC industry, the use of multiple die stack packaging has emerged to meet the increasing demand in miniaturization and improved functionality of mobile devices. During chip operation, transistor power dissipation raises temperature unevenly across a die. The generated thermal hotspots negatively impact reliability and degrade performance. In mechanical aspects, dies become thinner, and bumps and pitch become smaller, which makes heat dissipation more difficult, and lead to increase in mechanical stress. Such stress may cause carrier mobility degradation for transistors and could lead to para
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7

Wulf, Ulrich, and Hans Richter. "Scaling in Quantum Transport in Silicon Nano-Transistors." Solid State Phenomena 156-158 (October 2009): 517–21. http://dx.doi.org/10.4028/www.scientific.net/ssp.156-158.517.

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We develop a theory for scaling properties of quantum transport in nano-field effect transistors. Our starting point is a one-dimensional effective expression for the drain current in the Landauer-Büttiker formalism. Assuming a relatively simple total potential acting on the electrons the effective theory can be reduced to a scale-invariant form yielding a set of dimensionless control parameters. Among these control parameters are the characteristic length l and -width w of the electron channel which are its physical length and -width in units of the scaling length . Here is the Fermi energy i
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8

Zhu, Yan, and Mantu K. Hudait. "Low-power tunnel field effect transistors using mixed As and Sb based heterostructures." Nanotechnology Reviews 2, no. 6 (2013): 637–78. http://dx.doi.org/10.1515/ntrev-2012-0082.

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AbstractReducing supply voltage is a promising way to address the power dissipation in nano-electronic circuits. However, the fundamental lower limit of subthreshold slope (SS) within metal oxide semiconductor field effect transistors (MOSFETs) is a major obstacle to further scaling the operation voltage without degrading ON/OFF ratio in current integrated circuits. Tunnel field-effect transistors (TFETs) benefit from steep switching characteristics due to the quantum-mechanical tunneling injection of carriers from source to channel, rather than by conventional thermionic emission in MOSFETs.
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9

Pakmehr, Mehdi, B. D. McCombe, Olivio Chiatti, S. F. Fischer, Ch Heyn, and W. Hansen. "Characterization of High Mobility InAs/InGaAs/InAlAs Composite Channels by THz Magneto-Photoresponse Spectroscopy." International Journal of High Speed Electronics and Systems 24, no. 01n02 (2015): 1520004. http://dx.doi.org/10.1142/s0129156415200049.

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Inserted narrow InAs quantum wells in InAs/InGaAs/InAlAs heterostructures have been used to achieve higher mobility for high-electron-mobility transistors (HEMTs) with ultra-low-power and low-noise amplification characteristics and for spin-based devices. Due to the large nonparabolicity of the conduction band of InAs and the penetration of the confined electronic envelope function into the adjacent layer(s), accurate calculations of effective mass and g-factor of charge carriers can be problematic. Methods of making precise determinations of the mass and other electronic parameters are thus o
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10

John Chelliah, Cyril R. A., and Rajesh Swaminathan. "Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures." Nanotechnology Reviews 6, no. 6 (2017): 613–23. http://dx.doi.org/10.1515/ntrev-2017-0155.

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AbstractThe quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In order to continue Moore’s law of scaling, it is necessary to find an effective way to enhance carrier transport in scaled dimensions. In this regard, the use of alternative nanomaterials that have superior transport properties for metal-oxide-semiconductor field-effect transistor (MOSFET) channel would be advantageous. Because of the e
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11

Shikoh, Ali Sehpar, Gi Sang Choi, Sungmin Hong, Kwang Seob Jeong, and Jaekyun Kim. "High-sensitivity hybrid PbSe/ITZO thin film-based phototransistor detecting from 2100 to 2500 nm near-infrared illumination." Nanotechnology 33, no. 16 (2022): 165501. http://dx.doi.org/10.1088/1361-6528/ac47d3.

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Abstract We report that high absorption PbSe colloidal quantum dots (QDs) having a peak absorbance beyond 2100 nm were synthesized and incorporated into InSnZnO (ITZO) channel layer-based thin film transistors (TFTs). It was intended that PbSe QDs with proportionally less photocurrent modulation can be remedied by semiconducting and low off-current ITZO-based TFT configuration. Multiple deposition scheme of PbSe QDs on ITZO metal oxide thin film gave rise to nearly linear increase of film thickness with acceptably uniform and smooth surface (less than 10 nm). Hybrid PbSe/ITZO thin film-based p
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12

Bermundo, Juan Paolo, Dianne Corsino, Umu Hanifah, and Yukiharu Uraoka. "(Invited) High Performance Fully Solution Processed Transistors Towards Flexible Sustainable Electronics." ECS Meeting Abstracts MA2022-02, no. 35 (2022): 1279. http://dx.doi.org/10.1149/ma2022-02351279mtgabs.

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The shift towards a human-centered society promotes greater interconnectedness between people and the digital space. Modern devices such as displays and sensors in which thin-film transistors (TFT) are key materials have crucial roles in the next-generation society because displays are used as both information terminals and interface for human-device interactions while sensors gather data. Furthermore, there is growing interest in neuromorphic devices which aim to mimic the human brain’s efficiency in simultaneously processing and memorizing information to address the von Neumann bottleneck pe
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13

Kuo, Chil-Chyuan, and Yi-Jun Zhu. "Characterization of Epoxy-Based Rapid Mold with Profiled Conformal Cooling Channel." Polymers 14, no. 15 (2022): 3017. http://dx.doi.org/10.3390/polym14153017.

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Based on the experience of the foundry industry, reducing the demolding time is the key for mass production of wax patterns with sophisticated geometries. Integration of numerical simulation and rapid tooling technology for decreasing the time to market is essential in advanced manufacturing technology. However, characterization of epoxy-based rapid molds with a profiled conformal cooling channel (PCCC) using computer-aided engineering simulation of the epoxy-based rapid mold with PCCC was not found in the literature. In this study, epoxy-based rapid molds with PCCC were characterized numerica
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14

Gadzhiev, M. Kh, A. S. Tyuftyaev, Yu M. Kulikov, et al. "Lowtemperature plasma generator for effective processing of materials." Ferrous Metallurgy. Bulletin of Scientific , Technical and Economic Information 77, no. 5 (2021): 587–92. http://dx.doi.org/10.32339/0135-5910-2021-5-587-592.

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Low-temperature plasma is used in metallurgy for steel alloying by nitrogen, deoxidization of magnetic alloys, obtaining of steels with particularly low carbon content, metal cleaning of nonmetallic inclusions, desulfurization and other refining processes. The wide application of those technologies is restrained by absence of reliable generators of low-temperature plasma (GLP) with sufficient resource of continuous operation. As a result of studies, a universal generator of high-enthalpy plasma jet of various working gases was created. The generator has expanding channel of the output electrod
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15

Ito, Kosuke, Noah Utsumi, and Masashi Yoshida. "Development of Forming Method for Aluminum Alloy Channel with Curvature and Modified Cross-Section Shape in Rotary Draw Bending." Advanced Materials Research 1110 (June 2015): 130–35. http://dx.doi.org/10.4028/www.scientific.net/amr.1110.130.

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In the manufacturing industry, metal cross-sections and profiles are manufactured by using extrusion as the primary process. Subsequently, the products are generally subjected to bending in a secondary process. However, long products with the same cross-sections are typically mass-produced by one extrusion. In industries that manufacture such products, there have been increasing demands for flexible manufacturing systems that can be used for low-volume diverse products. However, it is difficult to adapt traditional manufacturing systems to this requirement. In this study, we aimed to develop a
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16

Hamlin, Andrew Bradford, Youxiong Ye, Julia Elizabeth Huddy, and William Joseph Scheideler. "Modulation Doped 2D InOx/GaOx Heterostructure Tfts Via Liquid Metal Printing." ECS Meeting Abstracts MA2022-01, no. 31 (2022): 1326. http://dx.doi.org/10.1149/ma2022-01311326mtgabs.

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Indium gallium zinc oxide (IGZO) and similar wide bandgap metal oxides are among the most widely used channel materials for drive transistors in displays due to their excellent electronic mobility and their ultra-high transparency1. However, industry-standard processing involves expensive vacuum deposition and elevated activation temperatures to produce semiconducting thin films. Liquid metal printing (LMP) is an emerging technique for oxide semiconductor fabrication poised to overcome these drawbacks via scalable vacuum-free transfer of the native oxide layers formed by spontaneous surface ox
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17

Liao, Chun-Da, Andrea Capasso, Tiago Queirós, et al. "Optimizing PMMA solutions to suppress contamination in the transfer of CVD graphene for batch production." Beilstein Journal of Nanotechnology 13 (August 18, 2022): 796–806. http://dx.doi.org/10.3762/bjnano.13.70.

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Mass production and commercial adoption of graphene-based devices are held back by a few crucial technical challenges related to quality control. In the case of graphene produced by chemical vapor deposition, the transfer process represents a delicate step that can compromise device performance and reliability, thus hindering industrial production. In this context, the impact of poly(methyl methacrylate) (PMMA), the most common support material for transferring graphene from the Cu substrate to any target surface, can be decisive in obtaining reproducible sample batches. Although effective in
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18

Liu, Cheewee, Chien-Te Tu, Bo-Wei Huang, and Chun-Yi Cheng. "(Digital Presentation) Stacked Nanosheet FETs and Beyond." ECS Meeting Abstracts MA2022-02, no. 32 (2022): 1193. http://dx.doi.org/10.1149/ma2022-02321193mtgabs.

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Si FinFETs have been used in the industry for mass production of advanced technology nodes [1-3]. Recently, the horizontal gate-all-around (GAA) transistors are considered as promising candidates to replace FinFETs due to the excellent electrostatics and short channel control [4-6]. The GAA architecture with vertically channel stacking can further enhance the drive current for a given footprint to achieve high performance and area scaling [7]. Moreover, high mobility channel is an attractive option to boost the drive current thanks to its intrinsic higher mobility as compared with Si [8]. Furt
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19

Andricek, Ladislav. "All-silicon multi-chip modules based on ultra-thin active pixel radiation sensors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, DPC (2014): 000960–83. http://dx.doi.org/10.4071/2014dpc-tp31.

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The Semiconductor Laboratory of the Max Planck Society is designing and producing cutting edge radiation and particle sensors for experiments in basic science conducted by institutes of the German Max Planck Society and other international partners. One of the most challenging projects is the construction of so-called vertex detectors for experiments at high energy particle colliders like KEKB in Japan and the future International Linear Collider (ILC) as the next big international high energy physics project after the LHC at CERN, Geneva, Switzerland. Modern vertex detectors are pixelated pos
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20

Glasser, Neil F., and Matthew R. Bennett. "Glacial erosional landforms: origins and significance for palaeoglaciology." Progress in Physical Geography: Earth and Environment 28, no. 1 (2004): 43–75. http://dx.doi.org/10.1191/0309133304pp401ra.

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Glacial inversion modelling of continental-scale palaeo-ice sheets is now recognized as an important tool in palaeoglaciology. Existing palaeoglaciological reconstructions of the dimensions, geometry and dynamics of former ice sheets are based mainly on glacial depositional, as opposed to glacial erosional, landforms. Part of the reason for this is a lack of detailed understanding of the origin and significance of glacial erosional landforms. Here we review recent developments in our understanding of the processes and landforms of glacial erosion and consider their value in palaeoglaciology. G
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21

Quino, Candell Grace Paredes, Juan Paolo Bermundo, Mutsunori Uenuma, and Yukiharu Uraoka. "Performance Enhancement of Solution-Processed SixSnyO TFTs using Solution Combustion Synthesis." ECS Meeting Abstracts MA2022-02, no. 35 (2022): 1280. http://dx.doi.org/10.1149/ma2022-02351280mtgabs.

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Amorphous oxide semiconductors thin-film transistors (AOs TFTs) have gained interest over the years because of their advantages over a-Si and poly-Si transistors.In particular, tin oxide is used as a semiconductor material because of its abundance, low toxicity, and high intrinsic mobility. Performance-wise, tin oxide TFTs need improvement because the reported average mobility remains < 10 cm2/Vs.1 Previous research used silicon doping to reduce tin oxide’s oxygen vacancies and improve its performance as a semiconductor channel.Currently, SixSnyO TFTs are fabricated using vacuum process, bu
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22

Akkili, Viswanath G., and Viranjay M. Srivastava. "Design and Performance Analysis of Low Sub-Threshold Swing p-Channel Cylindrical Thin-Film Transistors." Micro and Nanosystems 14 (May 18, 2022). http://dx.doi.org/10.2174/1876402914666220518141705.

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Background: Tin monoxide (SnO) attracts considerable interest for p-channel Cylindrical Thin Film Transistors (CTFTs) applications due to their merits, including low hole effective mass, Sn s and O p orbital hybridization at the valance band maxima, and ambipolar nature, among other p-type oxide semiconductors. Objective: This article analyses the influence of channel radius and the impact of dielectric materials on the performance of SnO based CTFT devices through 3D numerical simulations. Methods: The radius of the active layer in the CTFT was varied in the range from 10 nm to 30 nm, and it
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23

Wager, John F. "Single‐layer thin‐film transistor analysis and design." Journal of the Society for Information Display, August 24, 2023. http://dx.doi.org/10.1002/jsid.1257.

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AbstractA set of direct current (DC) analytical equations is formulated for the analysis and design of a single‐layer thin‐film transistor (TFT). For a specified TFT structure, drain current is calculated as a function of drain and gate voltage (taking the source as ground) according to the Enz, Krummenacher, Vittoz (EKV) compact model. One model parameter function is required to implement this EKV‐based equation, that is, drift mobility as a function of gate voltage. Drift mobility is evaluated as a consequence of accumulation layer electrostatics assessment of the TFT structure specified. In
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24

Alam, Khairul. "Transport and performance study of double-walled black phosphorus nanotube transistors." Semiconductor Science and Technology, June 9, 2022. http://dx.doi.org/10.1088/1361-6641/ac773e.

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Abstract Monolayer- and a few layers-Black Phosphorus is an emerging two-dimensional material for the post-silicon era. We study the transport mechanism and performance metrics of double-walled black phosphorus n-channel and p-channel gate-all-around nanotube transistors using a k·p Hamiltonian and a non-equilibrium Green’s function quantum simulation. We effectively use the anisotropic effective masses along the zigzag and armchair directions of black phosphorus for high performance nanotube field-effect transistors. The heavy mass along the zigzag direction is used for quantization to increa
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25

Nupur Navlakha, Leonard F. Register, and Sanjay K. Banerjee. "Emerging 2D materials for tunneling field effect transistors." Revista Tecnología en Marcha, June 29, 2023. http://dx.doi.org/10.18845/tm.v36i6.6768.

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This work focuses on understanding the electronic properties of materials to enhance the performance of Tunnel Field Effect Transistor (TFET) through Density Functional Theory (DFT) simulations. Material selection prefers a p-type material with in-plane high density of state (DOS) (and low out-of-plane effective mass, m*, where defined for many layer systems), and high valence band maxima (VBM) energy stacked with an n-type material with low conduction band minimum (CBM) energy (large electron affinity (EA)) that creates a broken or nearly broken band alignment and has low lattice mismatch. Sn
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26

"Germanane: A Low Effective Mass and High Bandgap 2-D Channel Material for Future FETs." IEEE Transactions on Electron Devices 61, no. 7 (2014): 2309–15. http://dx.doi.org/10.1109/ted.2014.2325136.

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27

Huang, Chunhui, Zeyi Yan, Chengwei Hu, Xiong Xiong, and Yanqing Wu. "Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering." Applied Physics Letters 123, no. 7 (2023). http://dx.doi.org/10.1063/5.0157416.

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Monolayer molybdenum disulfide (MoS2) is a promising semiconductor channel material for future electronics due to its atomic thickness and high mobility. However, conventional back-gate MoS2 transistors suffer from substantial scattering caused by substrate and surface adsorbates, which impair carrier mobility and device reliability. In this work, we demonstrate an exemplary dielectric engineering approach that uses atomic-layer-deposited hafnium oxide (HfO2) as the gate dielectric and channel passivation layer to improve device performance and positive bias instability. The large-single-cryst
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28

zhang, wei, Ruohao Hong, Wenjing Qin, et al. "Enhanced performance of p-type SnOx thin film transistors through defect compensation." Journal of Physics: Condensed Matter, July 26, 2022. http://dx.doi.org/10.1088/1361-648x/ac8464.

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Abstract Due to the unique outermost orbitals of Sn, hole carriers in tin monoxide (SnO) possess small effective mass and high mobility among oxide semiconductors, making it a promising p-channel material for thin film field-effect transistors (TFTs). However, the Sn vacancy induced field-effect mobility deterioration and threshold voltage (Vth) shift in experiments greatly limit its application in complementary metal-oxide-semiconductor transistors (CMOS). In this study, the internal mechanism of vacancy defect compensation by aluminium (Al) doping in SnOx film is studied combining experiment
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29

Jiang, Guanggang, Wei Dou, Xiaomin Gan, et al. "Low-voltage solution-processed P-type Mg-doped CuI thin film transistors with NAND logic function." Applied Physics Letters 122, no. 21 (2023). http://dx.doi.org/10.1063/5.0152445.

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Low-voltage electric-double-layer (EDL) p-channel Mg-doped CuI thin-film-transistors (TFTs) have been fabricated on glass substrates at low temperatures. Electrical properties of the solution-processed CuI TFTs with different Mg doping concentrations were investigated. It is observed that compared to undoped CuI TFTs and Mg0.1Cu0.9Ix TFTs, Mg0.05Cu0.95Ix TFTs exhibit an excellent current on/off ratio of 1.1 × 105, a steep subthreshold swing of 21.78 mV/dec, a higher saturation field-effect mobility of 0.95 cm2 V−1 s−1, and the threshold voltage of 1.81 V. The high specific capacitance of 4.7 μ
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30

Song, Okin, Dongjoon Rhee, Jihyun Kim, et al. "All inkjet-printed electronics based on electrochemically exfoliated two-dimensional metal, semiconductor, and dielectric." npj 2D Materials and Applications 6, no. 1 (2022). http://dx.doi.org/10.1038/s41699-022-00337-1.

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AbstractInkjet printing is a cost-effective and scalable way to assemble colloidal materials into desired patterns in a vacuum- and lithography-free manner. Two-dimensional (2D) nanosheets are a promising material category for printed electronics because of their compatibility with solution processing for stable ink formulations as well as a wide range of electronic types from metal, semiconductor to insulator. Furthermore, their dangling bond-free surface enables atomically thin, electronically-active thin films with van der Waals contacts which significantly reduce the junction resistance. H
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31

Proano, R. E., and R. J. Soave. "Fabrication and Properties of Single, Double, and Triple Gate Polycrystalline-Silicon Thin Film Transistors." MRS Proceedings 106 (1987). http://dx.doi.org/10.1557/proc-106-317.

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ABSTRACTPolysilicon based Thin Film Transistors (poly-Si TFT's) with superior electrical performance can be achieved by maximizing the number of intrinsic point defect injected into the material during high temperature processing. These point defects will migrate to grain boundaries (GB's), enhance their mobility by facilitating climb, and allow the boundary to achieve a low energy configuration with a minimum of electrically active broken bonds. Proper processing of poly-Si TFT's therefore requires a redesign of the conventional processing cycle where, working with single crystal silicon, one
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Lee, Hyun Jung, Andrei Sazonov, and Arokia Nathan. "Evolution of Structural and Electronic Properties in Boron-doped Nanocrystalline Silicon Thin Films." MRS Proceedings 989 (2007). http://dx.doi.org/10.1557/proc-0989-a21-07.

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AbstractWe report on the boron-doping dependence of the structural and electronic properties in nanocrystalline silicon (nc-Si:H) films directly deposited by plasma- enhanced chemical vapor deposition (PECVD). The crystallinity, micro-structure, and dark conductivity of the films were investigated by gradually varying the ratio of trimethylboron [B(CH3)3 or TMB] to silane (SiH4) from 0.1 to 2 %. It was found that the low level of boron doping (< 0.2 %) first compensated the nc-Si:H material which demonstrates slightly n-type properties. As the doping increased up to 0.5 %, the maximum dark
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33

Birkhahn, Ronald, David Gotthold, Nathan Cauffman, Boris Peres, and Seikoh Yoshida. "AlGaN/GaN HFETs for Automotive Applications." MRS Proceedings 743 (2002). http://dx.doi.org/10.1557/proc-743-l11.45.

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ABSTRACTAlGaN/GaN heterojunction field effect transistors (HFET) on sapphire substrates have demonstrated ability as power devices operating with high current densities and high breakdown voltages. Additionally, AlGaN/GaN HFET devices have a very low on-state resistance. This makes these devices ideal for automotive applications such as switching relays, DC-DC converters, and power inverters. By 2006, switching devices using GaN-based FETs are anticipated to be employed in luxury automobiles and transitioned to the mass market by 2009.In this presentation, data from AlGaN/GaN HFET's grown in a
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34

Li, Jiangdan, Christopher A. Onken, Christian Wolf, et al. "A Roche Lobe-filling hot Subdwarf and White Dwarf Binary: Possible detection of an ejected common envelope?" Monthly Notices of the Royal Astronomical Society, July 7, 2022. http://dx.doi.org/10.1093/mnras/stac1768.

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Abstract Binaries consisting of a hot subdwarf star and an accreting white dwarf (WD) are sources of gravitational wave radiation at low frequencies and possible progenitors of type Ia supernovae if the WD mass is large enough. Here, we report the discovery of the third binary known of this kind: it consists of a hot subdwarf O (sdO) star and a WD with an orbital period of 3.495 hours and an orbital shrinkage of 0.1 s in 6 yr. The sdO star overfills its Roche lobe and likely transfers mass to the WD via an accretion disk. From spectroscopy, we obtain an effective temperature of Teff = 54 240 ±
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