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Relevant bibliographies by topics / Low-frequency 1-f noise

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Academic literature on the topic 'Low-frequency 1-f noise'

Author: Grafiati

Published: 4 June 2021

Last updated: 2 February 2022

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Journal articles on the topic "Low-frequency 1-f noise"

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Balandin, Alexander A. "Low-frequency 1/f noise in graphene devices." Nature Nanotechnology 8, no. 8 (2013): 549–55. http://dx.doi.org/10.1038/nnano.2013.144.

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Lai, Yuming, Haipeng Li, David K. Kim, Benjamin T. Diroll, Christopher B. Murray, and Cherie R. Kagan. "Low-Frequency (1/f) Noise in Nanocrystal Field-Effect Transistors." ACS Nano 8, no. 9 (2014): 9664–72. http://dx.doi.org/10.1021/nn504303b.

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Gridnev, S. A., A. N. Tsotsorin, and A. V. Kalgin. "Low-frequency 1/f noise in relaxor ferroelectric PMN–PZT." physica status solidi (b) 245, no. 1 (2008): 224–26. http://dx.doi.org/10.1002/pssb.200743423.

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SOLIVERES, S., A. HOFFMANN, F. PASCAL, et al. "EXCESS LOW FREQUENCY NOISE IN SINGLE-WALL CARBON NANOTUBE." Fluctuation and Noise Letters 06, no. 01 (2006): L45—L55. http://dx.doi.org/10.1142/s0219477506003136.

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Low frequency noise measurements have been performed on a single-wall carbon nanotube connected by Ti/Au electrodes. It has been found that the 1/f noise decreases when the measurements are undertaken under vacuum and when the nanotube is partially degassed, showing a correlation between the fluctuation inducing the 1/f noise and the presence of gases. We show that the 1/f noise sources are located at the metal/nanotube contacts. When the device is annealed under vacuum at 450K, some Lorentzian shapes are observable and can be related to nanotube defects or to strongly bound molecules.

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Melkonyan, S. V., F. V. Gasparyan, and V. M. Aroutiunyan. "Low Frequency Noise Behavior in Semiconductors." Modern Physics Letters B 11, no. 20 (1997): 899–907. http://dx.doi.org/10.1142/s0217984997001109.

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The low frequency behavior of the generation-recombination noise in the homogeneous semiconductors is investigated. The form of Lorentz law for spectral density of noise at low frequencies is made more precise. It is shown that at superlow frequencies the spectrum of generation-recombination noise changes into the 1/f-law. The characteristic frequency of this change depends on the temperature and dimensions of the sample.

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Smith, D. T. "Low Frequency Noise in Tantalum Capacitors." Active and Passive Electronic Components 12, no. 4 (1987): 215–21. http://dx.doi.org/10.1155/1987/10769.

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Noise has been measured in a number of biased solid tantalum capacitors at frequencies down to 0.01 Hz. The noise current was found to have a 1/f power spectrum, and the amplitude varied with the bias voltage with a law in the range 1st to 4th power. There was a large difference in amplitudes between different capacitors of the same type.

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Pavelka, Jan, Munecazu Tacano, Nobuhisa Tanuma, and Josef Šikula. "1/f noise models and low-frequency noise characteristics of InAlAs/InGaAs devices." physica status solidi (c) 8, no. 2 (2010): 303–5. http://dx.doi.org/10.1002/pssc.201000516.

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Jang, Sheng-Lyang, Heng-Kuen Chen, and Man-Chun Hu. "Low-frequency 1/f noise model for short-channel LDD MOSFETs." Solid-State Electronics 42, no. 6 (1998): 891–99. http://dx.doi.org/10.1016/s0038-1101(98)00103-8.

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Kolek, A., A. W. Stadler, P. Ptak, et al. "Low-frequency 1/f noise of RuO2-glass thick resistive films." Journal of Applied Physics 102, no. 10 (2007): 103718. http://dx.doi.org/10.1063/1.2815677.

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Shen, Shi, and Jie Yuan. "1/${f}^{\gamma}$ Low Frequency Noise Model for Buried Channel MOSFET." IEEE Journal of the Electron Devices Society 8 (2020): 126–33. http://dx.doi.org/10.1109/jeds.2020.2967897.

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Dissertations / Theses on the topic "Low-frequency 1-f noise"

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Toro, Clemente Jr. "Improved 1/f Noise Measurements for Microwave Transistors." Scholar Commons, 2004. https://scholarcommons.usf.edu/etd/1271.

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Minimizing electrical noise is an increasingly important topic. New systems and modulation techniques require a lower noise threshold. Therefore, the design of RF and microwave systems using low noise devices is a consideration that the circuit design engineer must take into account. Properly measuring noise for a given device is also vital for proper characterization and modeling of device noise. In the case of an oscillator, a vital part of a wireless receiver, the phase noise that it produces affects the overall noise of the system. Factors such as biasing, selectivity of the input and output networks, and selectivity of the active device (e.g. a transistor) affect the phase noise performance of the oscillator. Thus, properly selecting a device that produces low noise is vital to low noise design. In an oscillator, 1/f noise that is present in transistors at low frequencies is upconverted and added to the phase noise around the carrier signal. Hence, proper characterization of 1/f noise and its effects on phase noise is an important topic of research. This thesis focuses on the design of a microwave transistor 1/f noise (flicker noise) measurement system. Ultra-low noise operational amplifier circuits are constructed and used as part of a system designed to measure 1/f noise over a broad frequency range. The system directly measures the 1/f noise current sources generated by transistors with the use of a transimpedance (current) amplifier. Voltage amplifiers are used to provide the additional gain. The system was designed to provide a wide frequency response in order to determine corner frequencies for various devices. Problems such as biasing filter networks, and load resistances are examined as they have an effect on the measured data; and, solutions to these problems are provided. Proper representation of measured 1/f noise data is also presented. Measured and modeled data are compared in order to validate the accuracy of the measurements. As a result, 1/f noise modeling parameters extracted from the measured 1/f noise data are used to provide improved prediction of oscillator phase noise.

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Both, Thiago Hanna. "Autocorrelation analysis in frequency domain as a tool for MOSFET low frequency noise characterization." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2017. http://hdl.handle.net/10183/174487.

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O ruído de baixa frequência é um limitador de desempenho em circuitos analógicos, digitais e de radiofrequência, introduzindo ruído de fase em osciladores e reduzindo a estabilidade de células SRAM, por exemplo. Transistores de efeito de campo de metalóxido- semicondutor (MOSFETs) são conhecidos pelos elevados níveis de ruído 1= f e telegráfico, cuja potência pode ser ordens de magnitude maior do que a observada para ruído térmico para frequências de até dezenas de kHz. Além disso, com o avanço da tecnologia, a frequência de corner —isto é, a frequência na qual as contribuições dos ruídos térmico e shot superam a contribuição do ruído 1= f — aumenta, tornando os ruídos 1= f e telegráfico os mecanismos dominantes de ruído na tecnologia CMOS para frequências de até centenas de MHz. Mais ainda, o ruído de baixa frequência em transistores nanométricos pode variar significativamente de dispositivo para dispositivo, o que torna a variabilidade de ruído um aspecto importante para tecnologias MOS modernas. Para assegurar o projeto adequado de circuitos do ponto de vista de ruído, é necessário, portanto, identificar os mecanismos fundamentais responsáveis pelo ruído de baixa frequência em MOSFETs e desenvolver modelos capazes de considerar as dependências do ruído com geometria, polarização e temperatura. Neste trabalho é proposta uma técnica para análise de ruído de baixa frequência baseada na autocorrelação dos espectros de ruído em função de parâmetros como frequência, polarização e temperatura. A metodologia apresentada revela informações importantes sobre os mecanismos responsáveis pelo ruído 1= f que são difíceis de obter de outras formas. As análises de correlação realizadas em três tecnologias CMOS comerciais (140 nm, 65 nm e 45 nm) fornecem evidências contundentes de que o ruído de baixa frequência em transistores MOS tipo-n e tipo-p é composto por um somatório de sinais telegráficos termicamente ativados.<br>Low-frequency noise (LFN) is a performance limiter for analog, digital and RF circuits, introducing phase noise in oscillators and reducing the stability of SRAM cells, for example. Metal-oxide-semiconductor field-effect-transistors (MOSFETs) are known for their particularly high 1= f and random telegraph noise levels, whose power may be orders of magnitude larger than thermal noise for frequencies up to dozens of kHz. With the technology scaling, the corner frequency — i.e. the frequency at which the contributions of thermal and shot noises to noise power overshadow that of the 1= f noise — is increased, making 1= f and random telegraph signal (RTS) the dominant noise mechanism in CMOS technologies for frequencies up to several MHz. Additionally, the LFN levels from device-to-device can vary several orders of magnitude in deeply-scaled devices, making LFN variability a major concern in advanced MOS technologies. Therefore, to assure proper circuit design in this scenario, it is necessary to identify the fundamental mechanisms responsible for MOSFET LFN, in order to provide accurate LFN models that account not only for the average noise power, but also for its variability and dependences on geometry, bias and temperature. In this work, a new variability-based LFN analysis technique is introduced, employing the autocorrelation of multiple LFN spectra in terms of parameters such as frequency, bias and temperature. This technique reveals information about the mechanisms responsible for the 1= f noise that is difficult to obtain otherwise. The correlation analyses performed on three different commercial mixed-signal CMOS technologies (140-nm, 65-nm and 40-nm) provide strong evidence that the LFN of both n- and p-type MOS transistors is primarily composed of the superposition of thermally activated random telegraph signals (RTS).

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Jin, Zhenrong. "Low-Frequency Noise in Silicon-Germanium BiCMOS Technology." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/4827.

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Low-frequency noise (LFN) is characterized using in-house measurement systems in a variety of SiGe HBT generations. As technology scales to improve the performance and integration level, a large low-frequency noise variation in small geometry SiGe HBTs is first observed in 90 GHz peak fT devices. The fundamental mechanism of this geometry dependent noise variation is thought to be the superposition of individual Lorentzian spectra due to the presence of G/R centers in the device. The observed noise variation is the result of a trap quantization effect, and is thus best described by number fluctuation theory rather than mobility fluctuation theory. This noise variation continues to be observed in 120 GHz and 210 GHz peak fT SiGe HBT BiCMOS technology. Interestingly, the noise variation in the 210 GHz technology generation shows anomalous scaling behavior below about 0.2-0.3um2 emitter geometry, where the noise variation rapidly decreases. Data shows that the collector current noise is no longer masked by the base current noise as it is in other technology generations, and becomes the dominant noise source in these tiny 210 GHz fT SiGe HBTs. The proton response of LFN in SiGe HBTs is also investigated in this thesis. The results show that the relative increase of LFN is minor in transistors with small emitter areas, but significant in transistors with large emitter areas after radiation. A noise degradation model is proposed to explain this observed geometry dependent LFN degradation. A 2-D LFN simulation is applied to SiGe HBTs for the first time in order to shed light on the physical mechanisms responsible for LFN. A spatial distribution of base current noise and collector current noise reveals the relevant importance of the physical locations of noise sources. The impact of LFN in SiGe HBTs on circuits is also examined. The impact of LFN variation on phase noise is demonstrated, showing VCOs with small geometry devices have relatively large phase noise variation across samples.

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Matharoo, Rishi. "1/f Additive Phase Noise Analysis for One-Port Injection Locked Oscillators." The Ohio State University, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=osu1430772754.

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Olyaei, Maryam. "Low-frequency noise in high-k gate stacks with interfacial layer engineering." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-177911.

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The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. One of the main issues is the escalating 1/fnoise level, which leads to degradation of signal-to-noise ratio (SNR) in electronic circuits. The focus of this thesis is on low-frequency noise characterization and modeling of various novel CMOS devices. The devices include PtSi Schottky-barriers for source/drain contactsand different high-kgatestacksusingHfO2, LaLuO3 and Tm2O3 with different interlayers. These devices vary in the high-k material, high-k thickness, high-k deposition method and interlayermaterial. Comprehensive electrical characterization and low-frequency noise characterization were performed on various devices at different operating conditions. The noise results were analyzed and models were suggested in order to investigate the origin of 1/f noise in these devices. Moreover, the results were compared to state-of-the-art devices. High constant dielectrics limit the leakage current by offering a higher physical dielectric thickness while keeping the Equivalent Oxide Thickness (EOT) low. Yet, the 1/f noise increases due to higher number of traps in the dielectric and also deterioration of the interface with silicon compared to SiO2. Therefore, in order to improve the interface quality, applying an interfacial layer (IL) between the high-k layer and silicon is inevitable. Very thin, uniform insitu fabricated SiO2 interlayers with HfO2 high-k dielectric have been characterized. The required thickness of SiO2 as IL for further scaling has now reached below 0.5 nm. Thus, one of the main challenges at the current technology node is engineering the interfacial layer in order to achieve both high quality interface and low EOT. High-k ILs are therefore proposed to substitute SiOx dielectrics to fulfill this need. In this work, we have made the first experiments on low-frequency noise studies on TmSiO as a high-k interlayer with Tm2O3 or HfO2 on top as high-k dielectric. The TmSiO/Tm2O3 shows a lower level of noise which is suggested to be related to smoother interface between the TmSiO and Tm2O3. We have achieved excellentnoise performancefor TmSiO/Tm2O3 and TmSiO/HfO2 gate stacks which are comparableto state-of-the-art SiO2/HfO2 gate stacks.<br><p>QC 20151130</p>

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von, Haartman Martin. "Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors." Doctoral thesis, KTH, Mikroelektronik och Informationsteknik, IMIT, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3888.

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A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. The low-frequency noise was comprehensively characterized for different types of operating conditions where the gate and bulk terminal voltages were varied. Detailed studies were made of the relationship between the 1/f noise and the device architecture, strain, device geometry, location of the conduction path, surface cleaning, gate oxide charges and traps, water vapour annealing, carrier mobility and other technological factors. The locations of the dominant noise sources as well as their physical mechanisms were investigated. Model parameters and physical properties were extracted and compared. Several important new insights and refinements of the existing 1/f noise theories and models were also suggested and analyzed. The continuing trend of miniaturizing device sizes and building devices with more advanced architectures and complex materials can lead to escalating 1/f noise levels, which degrades the signal-to-noise (SNR) ratio in electronic circuits. For example, the 1/f noise of some critical transistors in a radio receiver may ultimately limit the information capacity of the communication system. Therefore, analyzing electronic devices in order to control and find ways to diminish the 1/f noise is a very important and challenging research subject. We present compelling evidence that the 1/f noise is affected by the distance of the conduction channel from the gate oxide/semiconductor substrate interface, or alternatively the vertical electric field pushing the carriers towards the gate oxide. The location of the conduction channel can be varied by the voltage on the bulk and gate terminals as well by device engineering. Devices with a buried channel architecture such as buried SiGe channel pMOSFETs and accumulation mode MOSFETs on SOI show significantly reduced 1/f noise. The same observation is made when the substrate/source junction is forward biased which decreases the vertical electric field in the channel and increases the inversion layer separation from the gate oxide interface. A 1/f noise model based on mobility fluctuations originating from the scattering of electrons with phonons or surface roughness was proposed. Materials with a high dielectric constant (high-k) is necessary to replace the conventional SiO2 as gate dielectrics in the future in order to maintain a low leakage current at the same time as the capacitance of the gate dielectrics is scaled up. In this work, we have made some of the very first examinations of 1/f noise in MOSFETs with high-k structures composed by layers of HfO2, HfAlOx and Al2O3. The 1/f noise level was found to be elevated (up to 3 orders of magnitude) in the MOSFETs with high-k gate dielectrics compared to the reference devices with SiO2. The reason behind the higher 1/f noise is a high density of traps in the high-k stacks and increased mobility fluctuation noise, the latter possibly due to noise generation in the electron-phonon scattering that originates from remote phonon modes in the high-k. The combination of a TiN metal gate, HfAlOx and a compressively strained surface SiGe channel was found to be superior in terms of both high mobility and low 1/f noise.<br>QC 20100928

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Lei, Feiran. "Injection Locked Synchronous Oscillators (SOs) and Reference Injected Phase-Locke Loops (PLL-RIs)." The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1492789278258943.

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Zajaček, Jiří. "Šumová spektroskopie detektorů záření na bázi CdTe." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2009. http://www.nusl.cz/ntk/nusl-233498.

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The main object of this work is noise spectroscopy of CdTe radiation detectors (-rays and X–rays) and CdTe samples. The study of stochastic phenomenon and tracing redundant low-frequency noise in semiconductor materials require long-term measurements in time domain and evaluate suitable power spectral densities (PSD) with logarithmic divided frequency axes. We have used the means of time-frequency analysis derived from the discrete wavelet transform (DWT) and we have designed the effective algorithm for PSD estimation, which is comparable with an original analog method. CdTe single crystal with Au contacts we can imagine as a series connection of two Schottky diodes with a resistor between them. The bulk resistance at constant temperature and other constant parameters changes due to the carrier concentration changing only. The p-type CdTe sample shows metal behavior with every temperature changes. Semiconductor properties of the sample begin to dominate just after some period of time. This behavior is caused by the hole mobility changing. The voltage noise spectral density of 1/f noise depends on the quantity of free carriers in the sample. All the studied samples have very high value of low frequency noise, much higher than it should have been according to Hooge’s formula. The excess value of low frequency noise is caused by the low carrier concentration within the depleted region.

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Andreev, Alexey. "Šumová spektroskopie detektorů záření." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-233425.

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Kadmium telurid je velmi důležitý materiál jak základního, tak i aplikovaného výzkumu. Je to dáno zejména jeho výhodnými elektronickými, optickými a strukturními vlastnostmi, které ho předurčují pro náročné technické aplikace. Dnes se hlavně používá pro jeho vysoké rozlišení k detekci a X-záření. Hlavní výhodou detektorů na bázi CdTe je, že nepotřebují chlazení a mohou spolehlivě fungovat i při pokojové teplotě. To způsobuje efektivnější interakce fotonů než je tomu u Si nebo jiných polovodičových materiálů. Obsahem této práce byla analýza a interpretace výsledků získaných studiem šumových a transportních charakteristik CdTe vzorků. Měření ukázaly že odpor homogenní části CdTe krystalů mírně klesá při připojení elektrického pole na vzorku. Při změně teploty navíc dochází k odlišné reakci u CdTe typu p a n. Právě těmto efektům je v práci věnována pozornost. Pomocí šumové spektroskopie bylo zjištěno, že při nízkých frekvencích je u vzorků dominantní šum typu 1/f, zatímco při vyšších frekvencích je sledován generačně-rekombinační šum a tepelný šum. Všechny měřené vzorky vykazovaly mnohem vyšší hodnotu šumu na nízkých frekvencích než udává Hoogeova rovnice. Byly nalezeny a popsány zdroje nadbytečného šumu.

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Sury, Charlotte. "Localisation et évolution des sources de bruit en basses fréquences de HEMTs GaN sous contraintes électriques." Thesis, Bordeaux 1, 2011. http://www.theses.fr/2011BOR14245/document.

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Les HEMT à base de nitrure de gallium sont des composants très prometteurs en termes de performances en puissance et de fréquence de travail. L'enjeu est donc de développer des technologies performantes et fiables, afin d'intégrer ces transistors aux systèmes hyperfréquences, notamment dans le domaine des télécommunications, et en milieu durci. Les travaux ont été focalisés sur l'étude de la localisation des sources de bruit en excès aux basses fréquences, et de leur évolution suite aux phases de tests de vieillissement accéléré. Les caractérisations électriques ont été réalisées sur des structures fabriquées sur quatre plaques, dont trois sont basées sur une hétérostructure AlGaN/GaN, et la quatrième sur l'hétérostructure AlInN/AlN/GaN. Les résultats obtenus ont permis de valider une méthode de modélisation des sources de bruit en 1/f, localisées dans les zones d'accès aux contacts ohmiques et dans le canal. Des tests de vieillissement accéléré sous contraintes électriques ont permis de détecter des dégradations des performances statiques et du niveau de bruit en excès. Les effets combinés de piégeage et des effets thermiques expliquent ces dégradations, la température s'en étant révélée un facteur d'accélération<br>The HEMT based on GaN materials are very promising, speaking of performance in power and frequency. The challenge is to develop efficient and reliable GaN based technologies, to intagrate these transistors to power microwave circuits, especially in the telecommunications field and on harsh environment. The work was focused on the study of the location of low frequency noise sources, and their evolution after accelerated life tests. The electrical characterizations were performed on structures made on four different wafers, three based on the AlGaN/GaN heterostructure, and the fourth based on the AlInN/AlN/GaN heterostructure. Thanks to the achieved results, a method for modeling 1/f noise sources, located in the channel and in the ohmic contacts access areas, has been validated. Life tests under electrical stress have been performed to detect DC and excess noise degradation. These degradations are explained by combined effects of trapping and thermal phenomena, with the temperature as an acceleration factor of degradation

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Books on the topic "Low-frequency 1-f noise"

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Van der Ziel Symposium on Quantum 1/f oise and other Low Frequency Fluctuations in Electronic Devices (8th 1998 St. Louis, Mo.). Quantum 1/f noise and other low frequency fluctuations in electronic devices: Seventh symposium : St. Louis, Missouri August 1998. Edited by Handel Peter H, Chung Alma L, and American Institute of Physics. AIP Press, 1999.

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Van der Ziel Symposium on Quantum 1/f Noise and Other Low-Frequency Fluctuations in Electronic Devices (6th 1994 St. Louis, Mo.). Sixth quantum 1/f noise and other low frequency fluctuations in electronic devices symposium: St. Louis, MO, May 1994. Edited by Handel Peter H, Chung Alma L, and American Institute of Physics. AIP Press, 1996.

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H, Handel Peter, Chung Alma L, and American Institute of Physics, eds. Quantum 1/F noise & other low frequency fluctuations in electronic devices: St. Louis, MO 1992. American Institute of Physics, 1993.

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Sixth Quantum 1/f Noise and Other Low Frequency Fluctuations in Electronic Devices Symposium (AIP Conference Proceedings). American Institute of Physics, 2000.

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(Editor), Peter H. Handel, and Alma L. Chung (Editor), eds. Seventh Quantum 1/F Noise and Other Low Frequency Fluctuations in Electronic Devices: Seventh Symposium, St. Louis Missouri, August 1998 (AIP Conference Proceedings). American Institute of Physics, 1999.

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Book chapters on the topic "Low-frequency 1-f noise"

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Haartman, Martin von, and Mikael Östling. "1/F Noise in Mosfets." In Low-Frequency Noise In Advanced Mos Devices. Springer Netherlands, 2007. http://dx.doi.org/10.1007/978-1-4020-5910-0_3.

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KANDIAH, K. "LOW FREQUENCY NOISE MECHANISMS IN FIELD EFFECT TRANSISTORS." In Noise in Physical Systems and 1/f Noise 1985. Elsevier, 1986. http://dx.doi.org/10.1016/b978-0-444-86992-0.50008-4.

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HASSE, Lech Z., Alicja KONCZAKOWSKA, and Ludwik SPIRALSKI. "DATA ACQUISITION SYSTEM FOR NOISE CHARACTERIZATION IN THE VERY LOW FREQUENCY RANGE." In Noise in Physical Systems and 1/f Noise 1985. Elsevier, 1986. http://dx.doi.org/10.1016/b978-0-444-86992-0.50114-4.

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MAY, E. J. P., and H. H. MEHDI. "LOW FREQUENCY NOISE IN A SYSTEM COMPOSED OF TWO ELECTRODES WITH A BUTANE FLAME BETWEEN THEM." In Noise in Physical Systems and 1/f Noise 1985. Elsevier, 1986. http://dx.doi.org/10.1016/b978-0-444-86992-0.50100-4.

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Fu, Meng, Stan Skafidas, and Iven Mareels. "A Novel Delay-Based GFSK Demodulator in 65 nm CMOS for Low Power Biomedical Applications." In Data Analytics in Medicine. IGI Global, 2020. http://dx.doi.org/10.4018/978-1-7998-1204-3.ch045.

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This article describes how, in recent years, with the development of microelectronics, implantable electronic devices have been playing a significant role in modem medicine. Examples of such electronic implant devices are, for instance, retinal prosthesis and brain implants. It brings great challenges in low power radio frequency (RF) and analog designs. This article presents a low power Gaussian frequency shift keying (GFSK) demodulator designed for Medical Implant Communications Service (MICS) band Receiver. This demodulator utilizes a novel structure that a wide IF range can be handled and presents the smallest Δf/f ratio in any published GFSK demodulators. In theory the demodulation method can be applied to any RF frequency. The demodulator draws 550uA from a 1 V power supply. A maximum data rate of 400 Kbits/s can be achieved within the 300 KHz channel bandwidth defined by MICS. A simulated signal-to-noise ratio (SNR) of 15.2dB at AWGN channel is obtained to achieve 10-3 bit error rate (BER). This demodulator is fabricated on 65-nm CMOS and occupies 0.12mm2 silicon area.

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"Optimization of Parameters for Optimal Performance." In Optical Transmission and Networks for Next Generation Internet Traffic Highways. IGI Global, 2015. http://dx.doi.org/10.4018/978-1-4666-6575-0.ch011.

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The impact of the signal pulse width and the optical filter bandwidth on the performance of both RZ and NRZ On-Off Keying (OOK) Optical Time Division Multiplexing (OTDM)-Wavelength Division Multiplexing (WDM) systems are studied in this chapter. Using polynomial fitting, an approximated expression for the optimal signal pulse duty cycle as a function of the spectral density SD and Optical Signal to Noise Ratio (OSNR) is provided. Further, it is found that the bit rate per WDM channel does not affect the optimum signal pulse duty cycle. As the spectral density SD increases, DCopt increases, reducing the signal spectral width to compensate for the reduced the WDM channel frequency spacing ?f. For increasing OSNR, DCopt increases slightly, especially at higher SD. The authors found that ideal NRZ performs better than optimized RZ at high SD but worse at low SD.

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Conference papers on the topic "Low-frequency 1-f noise"

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Bannov, N., R. Mickevicius, V. Mitin, and Yu Sirenko. "Low-frequency noise in the low dimensional semiconductor structures." In Quantum 1/f noise and other low frequency fluctuations in electronic devices. AIP, 1992. http://dx.doi.org/10.1063/1.44367.

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Tiaoyang Li, Qingguo Gao, Zijun Wei, Xuefei Li, Yunyi Fu, and Yanqing Wu. "Low frequency 1/f noise in graphene FETs." In 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT). IEEE, 2014. http://dx.doi.org/10.1109/icsict.2014.7021167.

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Handel, Peter H. "Coherent quantum 1/f effect in second quantization." In Quantum 1/f noise and other low frequency fluctuations in electronic devices. AIP, 1992. http://dx.doi.org/10.1063/1.44360.

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Cable, S., and T. Tajima. "1/f noise in fluid films." In The sixth Van der Zielsymposium on quantum 1/f noise and other low frequency fluctuations in electronic devices. AIP, 1996. http://dx.doi.org/10.1063/1.50890.

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Hu, Xuewei, and Peter H. Handel. "Fractal dimension of a simplified quantum 1/f noise model." In Quantum 1/f noise and other low frequency fluctuations in electronic devices. AIP, 1992. http://dx.doi.org/10.1063/1.44369.

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Deen, M. J., and Y. Zhu. "1/f noise in n-channel MOSFETs at high temperatures." In Quantum 1/f noise and other low frequency fluctuations in electronic devices. AIP, 1992. http://dx.doi.org/10.1063/1.44374.

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Handel, Peter H., and Jian Xu. "New aspects of collector quantum 1/f noise in BJTs." In Quantum 1/f noise and other low frequency fluctuations in electronic devices. AIP, 1992. http://dx.doi.org/10.1063/1.44375.

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Handel, Peter H. "Conventional quantum 1/f effect with applications to photodetectors." In Quantum 1/f noise and other low frequency fluctuations in electronic devices. AIP, 1992. http://dx.doi.org/10.1063/1.44378.

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Zhu, Y., and M. J. Deen. "A study on Hooge’s empirical 1/f noise relation in semiconductors." In Quantum 1/f noise and other low frequency fluctuations in electronic devices. AIP, 1992. http://dx.doi.org/10.1063/1.44365.

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Jindal, R. P. "Low-frequency fluctuations-device, technology, and system implications." In Quantum 1/f noise and other low frequency fluctuations in electronic devices. AIP, 1992. http://dx.doi.org/10.1063/1.44376.

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Reports on the topic "Low-frequency 1-f noise"

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Handel, Peter H. International van der Ziel Symposium on Quantum 1/f, 1/f Noise and Other Low Frequency Fluctuations, Mainly in GaN, Quantum or Nanometric Devices (9th) Held in Richmond, Virginia on August 2-4, 2002. Defense Technical Information Center, 2004. http://dx.doi.org/10.21236/ada420504.

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