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Relevant bibliographies by topics / Low-k dielectric materials

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Dissertations / Theses

Academic literature on the topic 'Low-k dielectric materials'

Author: Grafiati

Published: 4 June 2021

Last updated: 13 February 2022

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Dissertations / Theses on the topic "Low-k dielectric materials"

1

Cho, Taiheui. "Anisotropy of low dielectric constant materials and reliability of Cu/low-k interconnects /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.

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2

Sun, Minwei. "Applying zeolites as low dielectric constant (low-k) materials." Diss., UC access only, 2009. http://proquest.umi.com/pqdweb?index=14&did=1907180231&SrchMode=1&sid=4&Fmt=2&VInst=PROD&VType=PQD&RQT=309&VName=PQD&TS=1270059102&clientId=48051.

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3

Martini, David M. "Metallization and Modification of Low-k Dielectric Materials." Thesis, University of North Texas, 2008. https://digital.library.unt.edu/ark:/67531/metadc9754/.

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Aluminum was deposited onto both Teflon AF and Parylene AF surfaces by chemical vapor deposition of trimethylaluminum. This work shows that similar thin film (100 Angstroms) aluminum oxide adlayers form on both polymers at the low temperature dosing conditions used in the studies. Upon anneal to room temperature and above, defluorination of the polymer surfaces increased and resulted in fluorinated aluminum oxide adlayers; the adlayers were thermally stable to the highest temperatures tested (600 K). Angle-resolved spectra showed higher levels of fluorination toward the polymer/adlayer interfa

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4

McGowan, Brian Thomas. "Magnetoresistance of a Low-k Dielectric." Thesis, State University of New York at Albany, 2016. http://pqdtopen.proquest.com/#viewpdf?dispub=10100441.

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<p> Low-k dielectrics have been incorporated into advanced computer chip technologies as a part of the continuous effort to improve computer chip performance. One drawback associated with the implementation of low-k dielectrics is the large leakage current which conducts through the material, relative to silica. Another drawback is that the breakdown voltage of low-k dielectrics is low, relative to silica [1]. This low breakdown voltage makes accurate reliability assessment of the failure mode time dependent dielectric breakdown (TDDB) in low-k dielectrics critical for the successful implement

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5

Martini, David M. Kelber Jeffry Alan. "Metallization and modification of low-k dielectric materials." [Denton, Tex.] : University of North Texas, 2008. http://digital.library.unt.edu/permalink/meta-dc-9754.

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6

Ahn, Sang Hoon 1970. "Electrical studies of silicon and low K dielectric material." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/9130.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.<br>Includes bibliographical references (leaves 108-111).<br>Junction capacitance measurement is a well-established powerful characterization technique that allows one to explore electrical and physical properties of defects in bulk and interface of electronic materials. Capacitance-Voltage (CV) measures the overall net carrier concentration and a built-in voltage for a diode junction. Deep level transient spectroscopy (DLTS) as one of the most sensitive electrical measurement techniques can

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7

Tong, Jinhong. "Study of Interactions Between Diffusion Barrier Layers and Low-k Dielectric Materials for Copper/Low-k Integration." Thesis, University of North Texas, 2003. https://digital.library.unt.edu/ark:/67531/metadc4384/.

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The shift to the Cu/low-k interconnect scheme requires the development of diffusion barrier/adhesion promoter materials that provide excellent performance in preventing the diffusion and intermixing of Cu into the adjacent dielectrics. The integration of Cu with low-k materials may decrease RC delays in signal propagation but pose additional problems because such materials are often porous and contain significant amounts of carbon. Therefore barrier metal diffusion into the dielectric and the formation of interfacial carbides and oxides are of significant concern. The objective of the presen

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8

Simkovic, Viktor. "Novel Low Dielectric Constant Thin Film Materials by Chemical Vapor Deposition." Thesis, Virginia Tech, 1999. http://hdl.handle.net/10919/35627.

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A modified CVD reactor was designed with a deposition chamber capable of accomodating 8" wafers, with the capacity to remotely pyrolyze two different precursors. The design was based on a previous working reactor, with the most notable improvements being a showerhead design for more even delivery of gaseous precursor and a separate heating control of the substrate holder and deposition chamber walls. The performance of the reactor was analyzed by testing the pressure gradients within and the thickness uniformity of films deposited on 8" wafers. The reactor exhibited a linear pressure gradie

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9

Haase, Micha, Ramona Ecke, and Stefan E. Schulz. "Requirements and challenges on an alternative indirect integration regime of low-k materials." Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207219.

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An alternative indirect integration regime of porous low-k materials was investigated. Based on a single Damascene structure the intra level dielectric SiO2 or damaged ULK was removed by using HF:H2O solutions to create free standing metal lines. The free spaces between the metal lines were refilled with a spin-on process of a low-k material. The persistence of barrier materials and copper against HF solutions, the gap fill behavior of the used spin on glass on different structure sizes and the main challenges which have to solve in the future are shown in this study.

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10

Kazi, Haseeb. "Plasma Interactions on Organosilicate Glass Dielectric Films and Emerging Amorphous Materials- Approach to Pore Sealing and Chemical Modifications." Thesis, University of North Texas, 2015. https://digital.library.unt.edu/ark:/67531/metadc801876/.

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In-situ x-ray photoemission (XPS) and ex-situ FTIR studies of nanoporous organosilicate glass (OSG) films point to the separate roles of radicals vs. VUV photons in the carbon abstraction. The studies indicate that reaction with O2 in presence of VUV photons (~123 nm) result in significant carbon abstraction within the bulk and that the kinetics of this process is diffusion-limited. In contrast, OSG exposed to atomic O (no VUV) results in Si-C bond scission and Si-O bond formation, but this process is self-limiting after formation of ~1 nm thick SiO2 surface layer that inhibits further diffusi

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