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Dissertations / Theses on the topic 'Low-k dielectric materials'

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Published: 4 June 2021

Last updated: 13 February 2022

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1

Cho, Taiheui. "Anisotropy of low dielectric constant materials and reliability of Cu/low-k interconnects /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.

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2

Sun, Minwei. "Applying zeolites as low dielectric constant (low-k) materials." Diss., UC access only, 2009. http://proquest.umi.com/pqdweb?index=14&did=1907180231&SrchMode=1&sid=4&Fmt=2&VInst=PROD&VType=PQD&RQT=309&VName=PQD&TS=1270059102&clientId=48051.

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3

Martini, David M. "Metallization and Modification of Low-k Dielectric Materials." Thesis, University of North Texas, 2008. https://digital.library.unt.edu/ark:/67531/metadc9754/.

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Aluminum was deposited onto both Teflon AF and Parylene AF surfaces by chemical vapor deposition of trimethylaluminum. This work shows that similar thin film (100 Angstroms) aluminum oxide adlayers form on both polymers at the low temperature dosing conditions used in the studies. Upon anneal to room temperature and above, defluorination of the polymer surfaces increased and resulted in fluorinated aluminum oxide adlayers; the adlayers were thermally stable to the highest temperatures tested (600 K). Angle-resolved spectra showed higher levels of fluorination toward the polymer/adlayer interfa

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4

McGowan, Brian Thomas. "Magnetoresistance of a Low-k Dielectric." Thesis, State University of New York at Albany, 2016. http://pqdtopen.proquest.com/#viewpdf?dispub=10100441.

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<p> Low-k dielectrics have been incorporated into advanced computer chip technologies as a part of the continuous effort to improve computer chip performance. One drawback associated with the implementation of low-k dielectrics is the large leakage current which conducts through the material, relative to silica. Another drawback is that the breakdown voltage of low-k dielectrics is low, relative to silica [1]. This low breakdown voltage makes accurate reliability assessment of the failure mode time dependent dielectric breakdown (TDDB) in low-k dielectrics critical for the successful implement

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5

Martini, David M. Kelber Jeffry Alan. "Metallization and modification of low-k dielectric materials." [Denton, Tex.] : University of North Texas, 2008. http://digital.library.unt.edu/permalink/meta-dc-9754.

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6

Ahn, Sang Hoon 1970. "Electrical studies of silicon and low K dielectric material." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/9130.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.<br>Includes bibliographical references (leaves 108-111).<br>Junction capacitance measurement is a well-established powerful characterization technique that allows one to explore electrical and physical properties of defects in bulk and interface of electronic materials. Capacitance-Voltage (CV) measures the overall net carrier concentration and a built-in voltage for a diode junction. Deep level transient spectroscopy (DLTS) as one of the most sensitive electrical measurement techniques can

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7

Tong, Jinhong. "Study of Interactions Between Diffusion Barrier Layers and Low-k Dielectric Materials for Copper/Low-k Integration." Thesis, University of North Texas, 2003. https://digital.library.unt.edu/ark:/67531/metadc4384/.

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The shift to the Cu/low-k interconnect scheme requires the development of diffusion barrier/adhesion promoter materials that provide excellent performance in preventing the diffusion and intermixing of Cu into the adjacent dielectrics. The integration of Cu with low-k materials may decrease RC delays in signal propagation but pose additional problems because such materials are often porous and contain significant amounts of carbon. Therefore barrier metal diffusion into the dielectric and the formation of interfacial carbides and oxides are of significant concern. The objective of the presen

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8

Simkovic, Viktor. "Novel Low Dielectric Constant Thin Film Materials by Chemical Vapor Deposition." Thesis, Virginia Tech, 1999. http://hdl.handle.net/10919/35627.

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A modified CVD reactor was designed with a deposition chamber capable of accomodating 8" wafers, with the capacity to remotely pyrolyze two different precursors. The design was based on a previous working reactor, with the most notable improvements being a showerhead design for more even delivery of gaseous precursor and a separate heating control of the substrate holder and deposition chamber walls. The performance of the reactor was analyzed by testing the pressure gradients within and the thickness uniformity of films deposited on 8" wafers. The reactor exhibited a linear pressure gradie

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9

Haase, Micha, Ramona Ecke, and Stefan E. Schulz. "Requirements and challenges on an alternative indirect integration regime of low-k materials." Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207219.

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An alternative indirect integration regime of porous low-k materials was investigated. Based on a single Damascene structure the intra level dielectric SiO2 or damaged ULK was removed by using HF:H2O solutions to create free standing metal lines. The free spaces between the metal lines were refilled with a spin-on process of a low-k material. The persistence of barrier materials and copper against HF solutions, the gap fill behavior of the used spin on glass on different structure sizes and the main challenges which have to solve in the future are shown in this study.

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10

Kazi, Haseeb. "Plasma Interactions on Organosilicate Glass Dielectric Films and Emerging Amorphous Materials- Approach to Pore Sealing and Chemical Modifications." Thesis, University of North Texas, 2015. https://digital.library.unt.edu/ark:/67531/metadc801876/.

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In-situ x-ray photoemission (XPS) and ex-situ FTIR studies of nanoporous organosilicate glass (OSG) films point to the separate roles of radicals vs. VUV photons in the carbon abstraction. The studies indicate that reaction with O2 in presence of VUV photons (~123 nm) result in significant carbon abstraction within the bulk and that the kinetics of this process is diffusion-limited. In contrast, OSG exposed to atomic O (no VUV) results in Si-C bond scission and Si-O bond formation, but this process is self-limiting after formation of ~1 nm thick SiO2 surface layer that inhibits further diffusi

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11

Harker, Marnie L. (Marnie Lynn) 1974. "Characterization of low k CVD deposited interlayer dielectrics for integrated circuits." Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/46100.

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12

Roepsch, Jodi Ann. "Characterizaton of Triethoxyfluorosilane and Tetraethoxysilane Based Aerogels." Thesis, University of North Texas, 2001. https://digital.library.unt.edu/ark:/67531/metadc2999/.

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Aerogels are highly porous, low dielectric constant (low k) materials being considered by the semiconductor industry as an interlayer dielectric. Low k materials are needed to overcome capacitance problems that limit device feature sizes. Precursors triethoxyfluorosilane (TEFS) and tetraethoxysilane (TEOS) were used to prepare bulk aerogels. Samples were prepared by sol-gel methods, and then carbon dioxide supercritically-dried. Effects of varying the water to precursor ratio were studied with respect to aerogel properties and microstructure. Methods of analysis for this study include FTIR-ATR

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13

Su, Ruo Qing. "New composite material based on silsesquioxane polymers and nanoporous particles for low-k [low-kappa] dielectric application." [S.l. : s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=972240519.

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14

Williamson, Jaimal Mallory. "Incorporation of air-filled pores/forms in a polyimide/benzocyclobutene matrix using a sacrifical commerical polymer for low K microelectronic applications." Thesis, Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/19101.

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15

Zagorodniy, Kostyantyn. "Molekularer Entwurf neuer Isolationsmaterialien für mikroelektronische Anwendungen." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2009. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-25484.

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Die ITRS (International Technology Roadmap for Semiconductors) sagt voraus, dass die fortlaufende Miniaturisierung der Transistoren und Verdrahtungen auch neue Isolationsmaterialien mit äußerst niedrigen (ultralow) Dielektrizitätskonstanten k erfordern wird. Die Miniaturisierung der Bauteile der ULSI (Ultra Large Scale Integration) führt zu starken Anforderungen an die Fertigung der kritischen Bereiche (backend-of-line, BEoL). Die ITRS deutet darauf hin, dass die k-Werte bis zu 2.0 für die 45 nm Technologie reduziert werden müssen, und zu noch niedrigeren k-Werten (k  1.5) für die nachfolgend

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16

Rimal, Sirish. "Characterization of Post-Plasma Etch Residues and Plasma Induced Damage Evaluation on Patterned Porous Low-K Dielectrics Using MIR-IR Spectroscopy." Thesis, University of North Texas, 2016. https://digital.library.unt.edu/ark:/67531/metadc849694/.

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As the miniaturization of functional devices in integrated circuit (IC) continues to scale down to sub-nanometer size, the process complexity increases and makes materials characterization difficult. One of our research effort demonstrates the development and application of novel Multiple Internal Reflection Infrared Spectroscopy (MIR-IR) as a sensitive (sub-5 nm) metrology tool to provide precise chemical bonding information that can effectively guide through the development of more efficient process control. In this work, we investigated the chemical bonding structure of thin fluorocarbon po

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17

Park, Seongho. "Materials, Processes, and Characterization of Extended Air-gaps for the Intra-level Interconnection of Integrated Circuits." Diss., Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/22598.

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Materials, Processes, and Characterization of Extended Air-gaps for the Intra-level Interconnection of Integrated Circuits Seongho Park 157 pages Directed by Dr. Paul A. Kohl and Dr. Sue Ann Bidstrup Allen The integration of an air-gap as an ultra low dielectric constant material in an intra-metal dielectric region of interconnect structure in integrated circuits was investigated in terms of material properties of a thermally decomposable sacrificial polymer, fabrication processes and electrical performance. Extension of the air-gap into the inter-layer dielectric region reduces the

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18

Albertin, Kátia Franklin. "Estudo de camadas dielétricas para aplicação em capacitores MOS." Universidade de São Paulo, 2007. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-08012008-144158/.

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Foram estudados filmes de oxinitreto de silício obtidos por PECVD à 320°C, a partir da mistura gasosa de N2O+SiH4+He, com diferentes valores de pressão e potência de deposição com o objetivo de produzir boa qualidade de interface deste material com o Si e de obter uma baixa densidade de carga efetiva visando a aplicação desses filmes em dispositivos semicondutores MOS. Os resultados mostraram que com uma pressão de deposição de 0,160 mbar e potências menores que 125 W/cm2 é possível obter um valor de densidade de estados de interface (Dit) de 4x1010 eV-1.cm-2, campo elétrico de ruptura (Ebd) d

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19

Prakash, Adithya. "Investigation on electrical properties of RF sputtered deposited BCN thin films." Master's thesis, University of Central Florida, 2013. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5838.

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The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated circuit (ULSI) devices. In order to reduce the time delay, it is necessary to introduce a wiring metal w

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20

Bao, Junjing 1981. "Interaction between plasma and low-k dielectric materials." Thesis, 2008. http://hdl.handle.net/2152/3820.

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With the scaling of devices, integration of porous ultra low-κ dielectric materials into Cu interconnect becomes necessary. Low-k dielectric materials usually consist of a certain number of methyl groups and pores incorporated into a SiO₂ backbone structure to reduce the dielectric constant. They are frequently exposed to various plasmas, since plasma is widely used in VLSI semiconductor fabrication such as etching, ashing and deposition. This dissertation is aimed at exploring the interaction between plasma and low-κ dielectric surfaces. First, plasma assisted the atomic layer deposition (ALD

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21

chang, tzu-hsien, and 莊子賢. "Study on Etching of Ultra Low-k Dielectric Constant Materials." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/68080826236072852834.

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碩士<br>國立臺灣海洋大學<br>輪機工程系<br>93<br>As ULSI are scaled down to deep submicron regime, interconnect delay becomes a increasingly dominant at intrinsic gate delay. Many new low dielectric constant materials have been developed to reduce the RC delay. However, the mechanical strength of porous low k materials is weaker than traditional low-k materials. The discussion of internal stress in the low-k material becomes a very important issue. This paper investigated the effect of etching of ultra low-k material and the integration process of copper interconnects. Experimental results showed that etching

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22

Sheng-WenChen and 陳聖文. "Synthesis and Characteristics of Carbon-doped Silicon Oxide Low-k Dielectric Constant Materials." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/95957482931989024896.

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博士<br>國立成功大學<br>材料科學及工程學系碩博士班<br>100<br>The objective of this study is to investigate a suitable low dielectric material (low-k)and copper (Cu)electrochemical mechanical planarization (ECMP) mechanism for the application of the nanometer integrated circuits. The main focus of this dissertation can be divided into two parts. First, the film is deposited from the decomposition of two precursors in the plasma. Both matrix (DEMS) and precursors (C10H16) are transformed into species that eventually lead to the formation of a hybrid film composed of an organ silicate-based matrix enclosing organic i

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23

Wei, Bor-Jou, and 魏伯州. "Studies on the Low-k Dielectric and High Reliability Thin Film Materials for Interconnects." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/97492674923759991673.

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博士<br>國立中興大學<br>材料科學與工程學系所<br>100<br>In order to integrated circuit (IC) industry following Moore’s law, for scal-ing downing the device the multilevel interconnect had used to increase the densities of circuits on a chip, interconnect delay is becoming predominant over device delay time. As the device dimensions continue to shrink, interconnect delay becomes a lim-iting factor for increasing circuit device speed. The multilevel interconnect basically consists of metal layers, inter-layer dielectric (ILD) and inter-metal dielectric (IMD). As the device dimensions continue to shrink, interconne

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24

Lee, Hua-Shan, and 李華山. "Investigation of Electrical Characteristics of KF Low-k Dielectric Material." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/25682379196474455954.

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碩士<br>國立成功大學<br>電機工程學系碩博士班<br>95<br>In this thesis, interaction between copper electrode and low dielectric constant KF ( Carbon-Doped silicon Oxide, CDO ) film was demonstrated. The Metal-Insulation-Semiconductor (MIS) capacitors were fabricated with a copper electrode. The breakdown electrical field was as high as 8.3 MV/cm under strict Bias Temperature Stress ( BTS ) conditions ( at 1 MV/cm and 170oC for 1000 sec ). In this work, we have investigated the relationship between leakage current and electrical field. We also have analyzed which transport mechanism is dominated. Finally, the resi

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25

Jiang, Cheng-Hong, та 姜政宏. "Suppression of Copper Diffusion by γ Irradiated low-k Organic Dielectric Material". Thesis, 2002. http://ndltd.ncl.edu.tw/handle/75297329337095924741.

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26

Duh, Cheng-Dow, and 杜政道. "The Interaction and Mechanism between Copper and low-k Dielectric Constant Material." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/04849693019200591176.

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27

曾曉琪. "Investigation on planarization process integration of porous low dielectric constant (K<=2.2) material." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/57592234521916664616.

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碩士<br>國立交通大學<br>電子工程系<br>90<br>As ULSI circuits are scaled down to deep submicron regime, interconnect delay becomes increasingly dominant over intrinsic gate delay. To reduce the RC delay time, many low dielectric constant materials have been developed. However, the mechanical strength of porous low k materials is worse than that of dense materials. For process integration considerations, we will investigate the impacts of CMP (chemical mechanical polish) on electrical characteristics of porous dielectrics.. In this thesis, we will investigate the impacts of the CMP process with va

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28

Feng, Kuei-Chih, and 馮奎智. "Development and characterization of novel CaMgSi2O6 glass-ceramic materials as low-K microwave dielectrics." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/42077374256205890308.

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博士<br>國立臺灣科技大學<br>機械工程系<br>101<br>Development and characterization of a CaMgSi2O6 diopside phase glass-ceramic, sintered at low temperature (≦1000oC) and reducing atmosphere as a microwave dielectric material, were carried out in this work. Different amount of monoclinic zirconia (m-ZrO2) nucleating agent was added into MgO-CaO-2SiO2 system to synthesize and enhance the quality factor (Q×f) of CaMgSi2O6 diopside glass-ceramic for low sintering temperature process (from 850oC to 950oC). Experimental results reveal that the t-ZrO2 forms in the amorphous MgO-CaO-2SiO2 matrix first, and then c

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29

Lo, Shen-Chuan, and 羅聖全. "Advanced Image-Spectrum Technique: The Investigation of Dielectric Property and Thermal Stability of Low-k Material in Cu Metallization." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/47224646887139034119.

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博士<br>國立清華大學<br>工程與系統科學系<br>91<br>In this thesis, we developed an advanced microscopy technique：image-spectrum technique to study the dielectric property and thermal stability of Black DiamondTM dielectric materials for copper metallization. In my dissertation, I used newly developed signal processing methods to improve the capability of quantitative analysis of image spectrum. FFT interpolation and maximum entropy deconvolution were successfully used to solve the two problems：under-sampling and loss of energy resolution in image-spectrum technique, respectively. Based on novel sign

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30

Che, Mu-Lung, and 車牧龍. "Study on the structure-property relationship of porous low-k dielectrics based on novel hybrid and nano-clustering materials." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/06319238663891195851.

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博士<br>國立交通大學<br>材料科學與工程學系<br>100<br>This work examines the structure-property relationship of porous low-k dielectrics such as novel MSQ/high-temperature porogen hybrid materials and nano-clustering materials, and explores their integration feasibility for future technology node. Specifically, the effect of porogen structure on the structure-property relationship in MSQ/porogen hybrid films and their corresponding porous films by using a post-integration porogen removal scheme is investigated. Poly(styrene-b-4-vinylpyridine) containing di-block structure and pyridine polar group possesses high

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