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Dissertations / Theses on the topic 'Low-k dielectric thin films'

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Published: 4 June 2021

Last updated: 1 February 2022

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1

Hu, Chuan. "Study of the thermal properties of low k dielectric thin films /." Full text (PDF) from UMI/Dissertation Abstracts International, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p9992820.

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2

Zhou, Wei. "Acoustic Excitations in Nanosponges, Low-k Dielectric Thin Films and Oxide Glasses." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1259683533.

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3

Simkovic, Viktor. "Novel Low Dielectric Constant Thin Film Materials by Chemical Vapor Deposition." Thesis, Virginia Tech, 1999. http://hdl.handle.net/10919/35627.

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A modified CVD reactor was designed with a deposition chamber capable of accomodating 8" wafers, with the capacity to remotely pyrolyze two different precursors. The design was based on a previous working reactor, with the most notable improvements being a showerhead design for more even delivery of gaseous precursor and a separate heating control of the substrate holder and deposition chamber walls. The performance of the reactor was analyzed by testing the pressure gradients within and the thickness uniformity of films deposited on 8" wafers. The reactor exhibited a linear pressure gradie

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4

Galassi, Fabio. "Fabrication of high-k dielectric thin films for spintronics." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2016. http://amslaurea.unibo.it/10449/.

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Lo scopo di questa tesi è la fabbricazione di ossidi complessi aventi struttura perovskitica, per mezzo della tecnica Channel Spark Ablation (CSA). Più precisamente sono stati depositati film sottili di manganite (LSMO), SrTiO3 (STO) e NdGaO3 (NGO). Inoltre nel laboratorio ospite è stata effettuata la caratterizzazione elettrica e dielettrica (spettroscopia di impedenza), mentre per l'analisi strutturale e chimica ci si è avvalsi di collaborazioni. Sono stati fabbricati dispositivi LSMO/STO/Co e se ne è studiato il comportamento magnetoresistivo e la bistabilità elettrica a seconda del cara

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5

Zizka, Jonathan. "Mechanical Properties of Low- and High-k Dielectric Thin Films by Brillouin Light Scattering." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1462806484.

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6

Lau, Kenneth Ka Shun 1972. "Chemical vapor deposition of fluorocarbon films for low dielectric constant thin film applications." Thesis, Massachusetts Institute of Technology, 2000. http://hdl.handle.net/1721.1/16748.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2000.<br>Includes bibliographical references.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Pulsed plasma enhanced and hot filament chemical vapor deposition have produced fluorocarbon films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Solid-state nuclear magnetic resonance spectroscopy was demonstrated as a valuable film characterization tool to u

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7

Bailey, Sheldon T. "Transparent Tissues and Porous Thin Films: A Brillouin Light Scattering Study." The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1357248652.

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8

Ross, April Denise 1977. "Chemical vapor deposition of organosilicon composite thin films for porous low-k dielectrics." Thesis, Massachusetts Institute of Technology, 2005. http://hdl.handle.net/1721.1/28846.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2005.<br>Includes bibliographical references.<br>Pulsed plasma enhanced chemical vapor deposition has produced organosilicon thin films with the potential use as low dielectric constant interconnect materials in microelectronic circuits. Both diethylsilane and octamethylcyclotetrasiloxane precursors were used, with oxygen and hydrogen peroxides oxidants respectively, to deposit low-k organosilicon films. FTIR, nanoindentation, ellipsometry, and dielectric constant measurements were demonstrated as a valuable

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9

Abdallah, Jassem. "The Fabrication of Direct-Write Waveguides via the Glassy-State Processing of Porous Films: UV-Induced Porosity and Solvent-Induced Porosity." Thesis, Available online, Georgia Institute of Technology, 2007, 2007. http://etd.gatech.edu/theses/available/etd-04162007-145326/.

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Thesis (M. S.)--Chemical and Biomolecular Engineering, Georgia Institute of Technology, 2008.<br>Hess, Dennis, Committee Member ; Teja, Amyn, Committee Member ; Kohl, Paul, Committee Chair ; Allen, Sue Ann Bidstrup, Committee Co-Chair.

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10

Tewg, Jun-Yen. "Zirconium-doped tantalum oxide high-k gate dielectric films." Diss., Texas A&M University, 2004. http://hdl.handle.net/1969.1/1346.

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A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include the gate dielectric layer for the next generation metal-oxide-semiconductor field effect transistor (MOSFET). Due to the aggressive device scaling in ultra-large-scale integrated circuitry (ULSI), the ultra-thin conventional gate oxide (SiO2) is unacceptable for many practical reasons. By replacing the SiO2 layer with a high dielectric constant mat

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11

Vilceus, Daniel. "Adhesion comparison of low dielectric constant thin films using four point bend and nanoscratch testing." [Tampa, Fla] : University of South Florida, 2008. http://purl.fcla.edu/usf/dc/et/SFE0002484.

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12

Prakash, Adithya. "Investigation on electrical properties of RF sputtered deposited BCN thin films." Master's thesis, University of Central Florida, 2013. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5838.

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The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated circuit (ULSI) devices. In order to reduce the time delay, it is necessary to introduce a wiring metal w

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13

Bontempo, Leonardo. "Caracterização elétrica de filmes finos de telureto com nanopartículas de ouro depositados pela técnica sputtering." Universidade de São Paulo, 2012. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-18102012-103632/.

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Este trabalho tem como objetivo a produção e caracterização elétrica de filmes finos de telureto com nanopartículas de ouro para aplicações em microeletrônica. Filmes finos foram produzidos por magnetron sputtering a partir de alvos de telureto cerâmico e de ouro metálico. Foi desenvolvida metodologia adequada para a nucleação das nanopartículas de ouro por meio de tratamento térmico. Foram nucleadas nanopartículas de ouro a fim de que fossem observadas as influências nas propriedades elétricas. Os filmes foram depositados sobre substrato de silício e, para as medidas elétricas, il

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14

El, Hajjam Khalil. "Ingénierie de jonctions tunnel pour améliorer les performances du transistor mono-électronique métallique." Thèse, Université de Sherbrooke, 2016. http://hdl.handle.net/11143/8508.

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Résumé: Aujourd’hui plusieurs obstacles technologiques et limitations physiques s’opposent à la poursuite de la miniaturisation de la technologie CMOS : courants de fuite, effet de canal court, effet de porteurs chauds et fiabilité des oxydes de grille. Le transistor à un électron (SET) fait partie des composants émergents candidats pour remplacer les transistors CMOS ou pour constituer une technologie complémentaire à celle-ci. Ce travail de thèse traite de l’amélioration des caractéristiques électriques du transistor à un électron en optimisant ses jonctions tunnel. Cette optimisation commen

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15

Woods, Keenan. "Amorphous Metal Oxide Thin Films from Aqueous Precursors: New Routes to High-κ Dielectrics, Impact of Annealing Atmosphere Humidity, and Elucidation of Non-uniform Composition Profiles". Thesis, University of Oregon, 2018. http://hdl.handle.net/1794/23173.

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Metal oxide thin films serve as critical components in many modern technologies, including microelectronic devices. Industrial state-of-the-art production utilizes vapor-phase techniques to make high-quality (dense, smooth, uniform) thin film materials. However, vapor-phase techniques require large energy inputs and expensive equipment and precursors. Solution-phase routes to metal oxides have attracted great interest as cost-effective alternatives to vapor-phase methods and also offer the potential of large-area coverage, facile control of metal composition, and low-temperature processing.

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16

Hajjam, Khalil El. "Ingénierie de jonctions tunnel pour améliorer les performances du transistor mono-électronique métallique." Thesis, Lyon, INSA, 2015. http://www.theses.fr/2015ISAL0111/document.

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Aujourd’hui plusieurs obstacles technologiques et limitations physiques s’opposent à la poursuite de la miniaturisation de la technologie CMOS : courants de fuite, effet de canal court, effet de porteurs chauds et fiabilité des oxydes de grille. Le transistor à un électron (SET) fait partie des composants émergents candidats pour remplacer les transistors CMOS ou pour constituer une technologie complémentaire à celle-ci. Ce travail de thèse traite de l’amélioration des caractéristiques électriques du transistor à un électron en optimisant ses jonctions tunnel. Cette optimisation commence tout

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17

Sun, Minwei. "Applying zeolites as low dielectric constant (low-k) materials." Diss., UC access only, 2009. http://proquest.umi.com/pqdweb?index=14&did=1907180231&SrchMode=1&sid=4&Fmt=2&VInst=PROD&VType=PQD&RQT=309&VName=PQD&TS=1270059102&clientId=48051.

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18

Luo, Wen. "Reliability characterization and prediction of high k dielectric thin film." Texas A&M University, 2004. http://hdl.handle.net/1969.1/3225.

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As technologies continue advancing, semiconductor devices with dimensions in nanometers have entered all spheres of human life. This research deals with both the statistical aspect of reliability and some electrical aspect of reliability characterization. As an example of nano devices, TaO<sub>x</sub>-based high k dielectric thin ﬁlms are studied on the failure mode identiﬁcation, accelerated life testing, lifetime projection, and failure rate estimation. Experiment and analysis on dielectric relaxation and transient current show that the relaxation current of high k dielectrics

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19

Qian, Lingxuan, and 钱凌轩. "Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2014. http://hdl.handle.net/10722/206467.

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In general, La-based high-k gate dielectric owns superior properties to offer transistor excellent characteristics. Thus, amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric has been investigated in this thesis. Different approaches have been adopted to improve the device performance. First of all, the influence of gate-dielectric annealing in oxygen for different times on the device characteristics of the amorphous InGaZnO thin-film transistor with HfLaO gate dielectric has been investigated. It is demonstrated that this annealing treatment can effectively suppress

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20

Wang, Peng. "Characterization fo porous low-k dielectric films by combined scattering techniques." Cincinnati, Ohio : University of Cincinnati, 2006. http://rave.ohiolink.edu/etdc/view.cgi?acc_num=ucin1181920566.

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21

柯展東 and Chin-tung David Or. "Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B31226590.

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22

Or, Chin-tung David. "Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation /." Hong Kong : University of Hong Kong, 2002. http://sunzi.lib.hku.hk/hkuto/record.jsp?B25151447.

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23

Iqbal, Asad. "Interaction of Molecular Contaminants with Low-k Dielectric Films and Metal Surfaces." Diss., The University of Arizona, 2007. http://hdl.handle.net/10150/196143.

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Ultra low-k dielectric films are expected to widely replace SiO2 as the interlayer dielectric for the next-generation microelectronic devices. A challenge facing the integration of these dielectrics in manufacturing is their interactions with gaseous contaminants, such as moisture and isopropanol, and the resulting change in their properties. Moisture retained in the film not only has detrimental effect on the k value of the film but also causes reliability and adhesion problems due to gradual outgassing. The physical and chemical interactions of moisture with porous spin-on and chemical va

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24

Kiani, Ahmed. "Analysis of metal oxide thin film transistors with high-k dielectrics and source/drain contact metals." Thesis, University of Cambridge, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648586.

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25

Yao, Junpin. "Control of Molecular Contaminants in Porous Low-k Dielectric Films and in UHP Gas Delivery Systems." Diss., The University of Arizona, 2008. http://hdl.handle.net/10150/195243.

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As compared to silicon oxide, porous low-k dielectric materials are more susceptible to molecular contaminants. As the device feature size decreases, control of molecular contaminants in porous low-k dielectric films and in UHP gas delivery systems becomes increasingly more challenging. Moisture was selected as the principal model contaminant in this research because the moisture impurity retained in the dielectric films not only increases the effective dielectric constant (k) value of the films but also degrades the reliability of the device. Dry-down of moisture contaminated UHP systems t

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26

Lu, Q. "Growth, dielectrics properties, and reliability of high-k thin films grown on Si and Ge substrates." Thesis, University of Liverpool, 2017. http://livrepository.liverpool.ac.uk/3013042/.

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27

Abdolvand, Reza. "Thin-film piezoelectric-on-substrate resonators and narrowband filters." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/28113.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008.<br>Committee Chair: Farrokh Ayazi; Committee Member: James D. Meindl; Committee Member: John D. Cressler; Committee Member: Nazanin Bassiri-Gharb; Committee Member: Oliver Brand.

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28

Gao, Yong. "Deposition, stabilization and characterization of zirconium oxide and hafnium oxide thin films for high k gate dielectrics." Diss., The University of Arizona, 2004. http://hdl.handle.net/10150/290136.

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As the MOS devices continue to scale down in feature size, the gate oxide thickness is approaching the nanometer node. High leakage current densities caused by tunneling is becoming a serious problem. Replacing silicon oxide with a high kappa material as the gate dielectrics is becoming very critical. In recent years, research has been focused on a few promising candidates, such as ZrO₂, HfO₂, Al₂O₃, Ta₂O₅, and some silicates. However, unary metal oxides tend to crystallize at relatively low temperatures (less than 700°C). Crystallized films usually have a very small grain size and high leakag

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29

Long, Joseph Preston. "Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces." NCSU, 2008. http://www.lib.ncsu.edu/theses/available/etd-10302008-160353/.

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The research discussed here has been carried out in order to advance the basic understanding of the compatibility between germanium surfaces and hafnium-based high Îº dielectric materials with a particular emphasis on their potential for microelectronic applications. To this end, spectroscopic studies were carried out to determine the physical and electronic properties of Ge/high-Îº structures, and MOS capacitors were fabricated to study their electrical characteristics. Crystallinity, thermal stability, electronic defect levels, and Hf d state degeneracy removal in this material system were s

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30

Rossi, Leonardo. "Flexible oxide thin film transistors: fabrication and photoresponse." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amslaurea.unibo.it/14542/.

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Gli ossidi amorfi semiconduttori (AOS) sono nuovi candidati per l’elettronica flessibile e su grandi aree: grazie ai loro legami prevalentemente ionici hanno una mobilità relativamente alta (µ > 10cm^2/Vs) anche nella fase amorfa. Transistor a film sottile (TFT) basati sugli AOS saranno quindi più performanti di tecnologie a base di a-Si e più economici di quelle a base di silicio policristallino. Essendo amorfi, possono essere depositati a basse temperature e su substrati polimerici, caratteristica chiave per l’elettronica flessibile e su grandi aree. Per questa tesi, diversi TFT sono stati

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31

Lin, Yen Po, and 林彥伯. "Application and Study of Low-K Dielectric Layer on Organic Thin Film transistor." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/44292270700774628269.

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碩士<br>清雲科技大學<br>電機工程研究所<br>94<br>Recently active matrix organic light-emitting diodes (AMOLEDs) become the most advanced technique on the FPD market. Using organic light-emitting diodes (OLEDs) and organic thin film transistors (OTFTs) can produce low-cost, flexible, full color flat panel display. Organic thin-film transistors (OTFTs) have been affected much attention due to their low temperature process, low cost, simple process, easy to manufacture . In this paper, we use organic semiconductor such as pentacene as the active layer and fabricate “Bottom Contact”structure organic thin film tra

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32

Ma, Ming-Wen, and 馬鳴汶. "Investigation on Low-Temperature Polycrystalline-Silicon Thin-Film Transistor with High-k Gate Dielectric." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/01251556879353623379.

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博士<br>國立交通大學<br>電子工程系所<br>96<br>In this dissertation, the impacts of HfO2 interfacial layer on n- and p-channel LTPS-TFTs are specified. In order to enhance the characteristics of HfO2 LTPS-TFT further, oxygen plasma surface treatment is employed to improve the interface quality and passivate the defects of channel grain boundaries, resulting in increasing the carrier mobility and reducing the surface roughness scattering. Moreover, significant field effect mobility �媹E improvement ~ 74.4 % and 108.5 % are observed for LTPS-TFTs with HfO2 gate dielectric after N2 and NH3 plasma surface treatme

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33

Wei, Bor-Jou, and 魏伯州. "Studies on the Low-k Dielectric and High Reliability Thin Film Materials for Interconnects." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/97492674923759991673.

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博士<br>國立中興大學<br>材料科學與工程學系所<br>100<br>In order to integrated circuit (IC) industry following Moore’s law, for scal-ing downing the device the multilevel interconnect had used to increase the densities of circuits on a chip, interconnect delay is becoming predominant over device delay time. As the device dimensions continue to shrink, interconnect delay becomes a lim-iting factor for increasing circuit device speed. The multilevel interconnect basically consists of metal layers, inter-layer dielectric (ILD) and inter-metal dielectric (IMD). As the device dimensions continue to shrink, interconne

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34

"Structure of high-k thin films on Si substrate." Thesis, 2009. http://library.cuhk.edu.hk/record=b6074953.

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We have investigated the structure and interfacial structure of two types of high-k dielectric thin films on Si using combined experimental and theoretical approaches. In the Hf-based high- k dielectrics, the crystallinity of three films, pure HfO2, Y-incorporated HfO2 and Al-incorporated HfO2, is examined by transmission electron diffraction (TED), and the local coordination symmetries of the Hf atoms in the films are revealed by the profile of electron energy-loss near-edge structure (ELNES) taken at oxygen K-edge. These ELNES spectra are then simulated using real-space multiple-scattering (

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35

Chang, Shih-Tzung, and 張仕宗. "Chemical-Mechanical Polishing of Low Dielectric Constant Spin-On Glass Thin Films." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/27382477371607679737.

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碩士<br>國立交通大學<br>材料科學與工程研究所<br>85<br>Chemical-mechanical polishing (CMP) process has been proven to be the most promising method for accomplishing global planarization. In this study,chemical-mechanical polishing of spin-on glass (SOG) thin films are presented. Wettability, surface property and bonding structure of spin-on glasses are characterized in order to evaluate their correlations with CMPperformance. Alkylsiloxane-based spin-on glass (SOG) thin films with varying amounts of organic

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36

Wu, Tsung-Shiun, and 吳宗訓. "High Dielectric Constant and Low Leakage Current TiO2 Thin Films on Silicon." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/66317990394301277493.

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碩士<br>國立中山大學<br>電機工程學系研究所<br>92<br>As the electronic device scale down, replacing conventional SiO2 with high dielectric constant material is very important. Due to its have high dielectric constant (ε// = 170, ε⊥ = 90), high refractive index (~2.5) and high chemical stability. TiO2 is a promising candidate for fabricating thin dielectrics in dynamic random access memory (DRAM) storage capacitors and as gate dielectrics of metal-oxide-semiconductor field effect transistor (MOSFET) without the problem of conventional SiO2 thickness scaling down in ULSI processes because of its high dielectric c

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37

Liu, Ji-Feng, and 劉吉峰. "Studies on Dry Etch of Low Dielectric Constant Nanoporous Silica Thin Films." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/37393144934146257011.

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碩士<br>國立交通大學<br>材料科學與工程系所<br>94<br>Due to the rapid increase in transistor density and the operation speed of an IC chip, the ultralarge-scale integrated circuit (ULSI) has an urgent demand for scaling down the device size, and thus the dimension of the interconnect accordingly. Consequently, the performance of the chip is no longer solely limited by the operation speed of the transistors, but also depends on the speed of the signal propagating through the interconnect. As the line width of the metal interconnect reduces, the performance of an IC chip can be degraded by interconnect RC delay

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Tai, Ya-Li, and 戴雅麗. "Study on Chemical-Mechanical Polishing of Low-Dielectric Constant Polyimide Thin Films." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/06646097204518863660.

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碩士<br>國立交通大學<br>材料科學與工程系<br>87<br>As IC manufacturing shrinking down to deep sub-micron region, interconnect RC delay would take the major part of total signal propagation delay. New materials of low electrical resistance conductors and low dielectric constant insulators are thus being extensively investigated for the reduction of interconnect RC delay. Polyimide (PI) is one promising candidate of the low-k polymers whose dielectric constants are lower than that of silicon dioxide, not only for its good electrical insulating properties, but for the benefits from its excellent thermal stability

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39

Jajala, Bujjamma. "Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications." Thesis, 2010. http://etd.iisc.ernet.in/handle/2005/2241.

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The scaling down of Complementary Metal Oxide Semiconductor (CMOS) transistors to sub-100nm requires replacement of conventional Silicon dioxide layer with high dielectric constant (K) material for gate dielectric. Among the various high-K dielectrics that have been studied, HfO2 is found to be a promising candidate because of its high dielectric constant (~25), large band gap (5.68 eV), thermodynamic stability and good interface with Si. The HfO2 films have already been deposited using different growth techniques such as Atomic layer Deposition (ALD), Metalorgonic Chemical Vapor Deposition

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40

Ahearn, Wesley James. "Spectroscopic studies of boron carbo-nitride." Thesis, 2010. http://hdl.handle.net/2152/ETD-UT-2010-12-2144.

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BCxNy films were characterized as a potential pore sealing layer for low κ dielectrics. The changes in chemical bonding were studied as a function of growth temperature to aid in understanding the variation in electrical performance of these films. Thermal chemical vapor deposition of BCxNy using dimethylamine borane and ethylene were deposited on porous methylsilsesquioxane substrates at 335 °C and 1 Torr. BCxNy was able to seal the porous interface with a thickness of 3.9 nm for both blanket and patterned substrates. BCxNy films deposited over a temperature range of 300-400 °C with dimethyla

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41

"Low-voltage organic thin film transistors (OTFTs) with solution-processed high-k dielectric cum interface engineering." 2013. http://library.cuhk.edu.hk/record=b5549763.

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儘管在提高有機薄膜晶體管（OTFTs）的性能方面已經取得了顯著地進步，但是由傳統二氧化矽介電層的低面電容密度引起的高驅動電壓一直是阻礙其在實際應用中發展的絆腳石。因此，開發具有低成本、高介電常數等特點的新型材料對於學術界和工業界都具有非常重要的意義。<br>本文首先介紹了一種簡單的溶液法在低溫下制備高介電常数的Al₂O{U+ABB7}/TiO{U+2093}（ATO）材料體系，并詳細表徵和討論了它的介電性能。通過運用ATO作為介電層，我們成功地製備了低電壓銅酞菁（CuPc）基OTFT。有趣的是，該低電壓器件顯示出優異的性能，並且遠遠超過在二氧化矽上製備的器件性能。這個結果似乎和報道的結果相矛盾，因為高介電常數往往對器件性能造成不利影響。本文就此异常現象進行了詳細研究。基於初期生長的研究表明，在ATO表面上，CuPc分子組裝成有利於載流子輸運的棒狀晶體，并形成網狀結構。相反，在SiO₂表面上CuPc分子卻形成由無定形結構組成的孤立小島。此外，在ATO上還觀察到了更好的金屬/有機分子接觸，有利於載流子的注入。以上研究表明溶液法製備的ATO在实现高性能、低電壓的OTFT方面有著非常實用的前景。<br>此外，界面的性質對決定OTFT的電學性能非常關鍵。因此研究界面功能化對提高器件性能的作用也非常重要。在應用十八烷基磷酸（ODPA）和原位改性的Cu（M-Cu）分別對介電層/半導體、電極/半

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Ganapathi, K. Lakshmi. "Optimization of HfO2 Thin Films for Gate Dielectric Applications in 2-D Layered Materials." Thesis, 2014. http://hdl.handle.net/2005/3219.

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Recently, high-κ materials have become the focus of research and been extensively utilized as the gate dielectric layer in aggressive scaled complementary metal-oxide-semiconductor (CMOS) technology. Hafnium dioxide (HfO2) is the most promising high-κ material because of its excellent chemical, thermal, mechanical and dielectric properties and also possesses good thermodynamic stability and better band offsets with silicon. Hence, HfO2 has already been used as gate dielectric in modern CMOS devices. For future technologies, it is very difficult to scale the silicon transistor gate length, so i

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Shi, Hualiang. "Mechanistic study of plasma damage to porous low-k : process development and dielectric recovery." Thesis, 2010. http://hdl.handle.net/2152/ETD-UT-2010-05-749.

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Low-k dielectrics with porosity are being introduced to reduce the RC delay of Cu/low-k interconnect. However, during the O2 plasma ashing process, the porous low-k dielectrics tend to degrade due to methyl depletion, moisture uptake, and densification, increasing the dielectric constant and leakage current. This dissertation presents a study of the mechanisms of plasma damage and dielectric recovery. The kinetics of plasma interaction with low-k dielectrics was investigated both experimentally and theoretically. By using a gap structure, the roles of ion, photon, and radical in producing dama

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Wang, Chil-liang, and 王啟亮. "A study of mechanical properties and interfacial adhesion of low-k dielectric thin film for microelectronic applications." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/88743372263796683056.

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碩士<br>義守大學<br>機械與自動化工程學系碩士班<br>93<br>Cabon doped silicon oxide low-k thin films deposited by the plasma enhanced chemical vapor deposition technique from trimethylsilane and oxygen have been prepared. Effects of chemical mechanical polishing on the mechanical properties and interfacial fracture energy were investigated. The residual stresses in thin films were calculated by the Stoney’s equation by virtue of measuring the bending radius of curvature of the wafers. The Young’s modulus and hardness of thin films were obtained by the nano-indentation. The low-k thin film adhesion testing was cond

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Hsu, Cheng-Chung, and 許正忠. "An Investigation on the Properties of High-K Ultra-thin HfSiON Films as Gate Dielectric." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/02079360146682641818.

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碩士<br>國立雲林科技大學<br>光學電子工程研究所<br>97<br>The semiconductor fabrication technologies have been developed into nero-scale generation. It is a trade that high-k material will be used to replace the traditional SiO2 as gate oxide. In this study, the RF magnetron controlled sputtering system was applied to deposit 60Å–thick HfSiON thin film on p-type Si-(100) substrate. The sputter system has the re-sputtering function. Before and after the HfSiON film grown, the N2 and O2 plasma treatments were applied to improve the quality of HfSiON film. Before the HfSiON thin film growth, the bare Si substrat

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Li, Jia-Hao, and 李家浩. "Preparation of Polyimine Thin Films with Low-dielectric Constant Property Using Solution Polymerization Method." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/91300093249676422639.

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碩士<br>國立交通大學<br>材料科學與工程系<br>90<br>ABSTRACT Solution polymerization was applied to prepare the low dielectric constant aromatic polyimines and their physical properties were investigated. We evaluated electrical properties of polyimines including dieletric constant, breakdown voltage and dissipation factor. Thermal decomposed temperature of polyimine was measured by thermal gravimetric analyzer (TGA) to evaluate the thermal stability of the polymer specimens. We also measured the inherent viscosity and moisture absorption index of aromatic polyimines. The aromatic polyimines have

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姚富淵. "The characteristics of Y1-xA1xO3(x=0~0.58)thin films for high-k gate dielectric applications." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/70217489808515271799.

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Huang, Hsiu-Ling, and 黃秀鈴. "Study on Low Dielectric Constant Diamond-Like Carbon Thin Films by Gridless Ion Beam Deposition." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/04713444463115703383.

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碩士<br>國立交通大學<br>材料科學與工程系<br>88<br>For the needs of scaling down the feature sizes and increasing the circuit speed for IC manufacturing, the trend toward increasing interconnect packing density has driven the development of multilevel interconnect system. As interconnect lines shrink and move closer together, the resistance-capacitance (RC) delay will produce and directly limit device speed. The semiconductor industry has been prompted to adopt new materials and architectures: low-k dielectric / copper dama

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Louh, Sei-Ping, and 駱世平. "Growth characteristics of hydrogenated amorphous carbon thin films with low dielectric constant prepared by PECVD." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/36415739416547532754.

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博士<br>國立成功大學<br>材料科學及工程學系碩博士班<br>94<br>For decreasing the RC delay between the interconnect metals, the solution is lowering dielectric constant of the interlayer dielectric, besides reducing the electrical resistance of the interconnect. The amorphous carbon films deposited by PECVD have not only a lower dielectric constant near to 2.8, but also thermal stability, high hardness and high electrical resistance. Compared with other low-k material, however, the amorphous carbon films have not enough low dielectric constant and need to improve the process control or search other carbon precursors

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Hsieh, Yuan-Tsu, and 謝元智. "Chemical-Mechanical Polishing and Material Characterization of Low Dielectric Constant PECVD Fluorinated Oxide Thin Films." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/52928629850932934772.

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碩士<br>國立交通大學<br>材料科學與工程研究所<br>84<br>Advanced semiconductor device interconnects are the pivotal component governing the final device yield and reliability. The trend toward shrinking design rules and increased interconnect packing density have driven the development of multilevel interconnect system. As interconnect lines shrink and move closer together, the resistance of conductor lines and plugs and the capacitance of SiO2-based inter-metal dielectrics limit further increase in

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