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Journal articles on the topic 'Low-k dielectric thin films'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Wang, Z., H. Wang, A. Mitra, L. Huang, and Y. Yan. "Pure-Silica Zeolite Low-k Dielectric Thin Films." Advanced Materials 13, no. 10 (2001): 746–49. http://dx.doi.org/10.1002/1521-4095(200105)13:10<746::aid-adma746>3.0.co;2-j.

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2

Endo, Kazuhiko. "Fluorinated Amorphous Carbon as a Low-Dielectric-Constant Interlayer Dielectric." MRS Bulletin 22, no. 10 (1997): 55–58. http://dx.doi.org/10.1557/s0883769400034217.

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Low-k organic polymers such as polytetrafluoroethylene (PTFE) are promising materials for use as interlayer dielectrics (ILD) because their dielectric constants are generally lower than those of inorganic materials. However poor adhesion with Si substrates, poor thermal stability, and production difficulties have hindered their use in microelectronics.On the other hand, plasma-enhanced chemical vapor deposition (PECVD) of polymer films (plasma polymerization) has many advantages that help to overcome these problems. Plasma-enhanced chemical vapor deposition uses a glow discharge to create acti

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3

Chérault, N., G. Carlotti, N. Casanova, et al. "Mechanical characterization of low-k and barrier dielectric thin films." Microelectronic Engineering 82, no. 3-4 (2005): 368–73. http://dx.doi.org/10.1016/j.mee.2005.07.018.

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4

CHO, S. J., I. S. BAE, and J. H. BOO. "STUDY OF LOW-k DIELECTRIC ORGANIC POLYMER THIN FILMS DEPOSITED BY A PECVD METHOD." Functional Materials Letters 01, no. 01 (2008): 77–81. http://dx.doi.org/10.1142/s1793604708000149.

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Plasma polymerized methylcyclohexane thin films were deposited on silicon substrates at room temperature and different RF powers using a plasma-enhanced chemical vapor deposition (PECVD) method. The as-grown thin films were annealed in a vacuum. Methylcyclohexane monomer was utilized as an organic precursor, and hydrogen and argon were used as the bubbled and carrier gases, respectively. The as-grown plasma-polymer organic thin films were analyzed by FT-IR and SEM and in terms of their hardness and modulus and their capacitance values. Annealed polymer thin films were also analyzed. The dielec

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5

Jensen, J., G. Possnert, and Y. Zhang. "Temperature effect on low-k dielectric thin films studied by ERDA." Journal of Physics: Conference Series 100, no. 1 (2008): 012041. http://dx.doi.org/10.1088/1742-6596/100/1/012041.

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6

Eijt, S. W. H., A. van Veen, C. V. Falub, et al. "Depth-selective 2D-ACAR studies on low-k dielectric thin films." Radiation Physics and Chemistry 68, no. 3-4 (2003): 357–62. http://dx.doi.org/10.1016/s0969-806x(03)00184-1.

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7

Bauer, Barry J., Eric K. Lin, Hae-Jeong Lee, Howard Wang, and Wen-Li Wu. "Structure and property characterization of low-k dielectric porous thin films." Journal of Electronic Materials 30, no. 4 (2001): 304–8. http://dx.doi.org/10.1007/s11664-001-0035-x.

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8

Hu, Lili, Junlan Wang, Zijian Li, Shuang Li, and Yushan Yan. "Interfacial adhesion of nanoporous zeolite thin films." Journal of Materials Research 21, no. 2 (2006): 505–11. http://dx.doi.org/10.1557/jmr.2006.0060.

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Nanoporous silica zeolite thin films are promising candidates for future generation low-dielectric constant (low-k) materials. During the integration with metal interconnects, residual stresses resulting from the packaging processes may cause the low-k thin films to fracture or delaminate from the substrates. To achieve high-quality low-k zeolite thin films, it is important to carefully evaluate their adhesion performance. In this paper, a previously reported laser spallation technique is modified to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces fabricated u

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9

Sudheendran, K., and K. C. James Raju. "Microwave Characterization Techniques for High K Thin Films." Key Engineering Materials 421-422 (December 2009): 73–76. http://dx.doi.org/10.4028/www.scientific.net/kem.421-422.73.

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Characterization of the dielectric properties of bulk materials in the microwave frequency range is well developed while that of thin films is a challenge. New microwave characterization techniques are needed for thin films taking in to account the fact that they are always deposited on a dielectric or conducting substrate and the thickness of the film is too small compared to the wavelength involved. In this paper we are demonstrating various techniques that can be used for the microwave characterization of thin films. The microwave dielectric properties of the bismuth zinc niobate (BZN) thin

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10

Gupta, Swati, Anil Gaikwad, Ashok Mahajan, Hongxiao Lin, and Zhewei He. "Sol–gel deposited xerogel, aerogel and porogen based porous low-k thin films: A comparative investigation." International Journal of Modern Physics B 35, no. 14n16 (2021): 2140019. http://dx.doi.org/10.1142/s0217979221400191.

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Low dielectric constant (Low-[Formula: see text]) films are used as inter layer dielectric (ILD) in nanoelectronic devices to reduce interconnect delay, crosstalk noise and power consumption. Tailoring capability of porous low-[Formula: see text] films attracted more attention. Present work investigates comparative study of xerogel, aerogel and porogen based porous low-[Formula: see text] films. Deposition of SiO2 and incorporation of less polar bonds in film matrix is confirmed using Fourier Transform Infra-Red Spectroscopy (FTIR). Refractive indices (RI) of xerogel, aerogel and porogen based

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11

Lemonds, A. M., K. Kershen, J. Bennett, et al. "Adhesion of Cu and low-k Dielectric Thin Films with Tungsten Carbide." Journal of Materials Research 17, no. 6 (2002): 1320–28. http://dx.doi.org/10.1557/jmr.2002.0197.

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The adhesion of copper and various dielectric materials to tungsten carbide was studied using interfacial critical debond energies obtained by the four-point flexure method. Tungsten carbide (W2C), films 33.3 nm thick, were vapor deposited onto SiO2, spin-on carbon polymer resin (CPR), chemically vapor deposited organosilicate glass (OSG), and spin-on siloxane-organic polymer (SOP) surfaces using direct-current magnetron sputtering of a W metal target and a methane substrate plasma. Thick copper films (42.5 nm) were vapor deposited onto W2C. Some interfaces were modified by an Ar plasma, 1-nm

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12

Chan, K. C., M. Teo, and Z. W. Zhong. "Characterization of low‐k benzocyclobutene dielectric thin film." Microelectronics International 20, no. 3 (2003): 11–22. http://dx.doi.org/10.1108/13565360310487909.

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13

Stan, G., R. S. Gates, P. Kavuri, et al. "Mechanical property changes in porous low-k dielectric thin films during processing." Applied Physics Letters 105, no. 15 (2014): 152906. http://dx.doi.org/10.1063/1.4898351.

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14

Nehate, Shraddha Dhanraj, Sreeram Sundaresh, Robert Peale, and Kalpathy B. Sundaram. "Hydrogenation of Boron Carbon Nitride Thin Films for Low-k Dielectric Applications." ECS Journal of Solid State Science and Technology 10, no. 9 (2021): 093001. http://dx.doi.org/10.1149/2162-8777/ac210d.

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15

Zhao, Xurong, Sumei Wang, Aiju Li, Jun Ouyang, Guodong Xia, and Ji Zhou. "Universal solution-processed high-k amorphous oxide dielectrics for high-performance organic thin film transistors." RSC Adv. 4, no. 29 (2014): 14890–95. http://dx.doi.org/10.1039/c4ra00633j.

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Solution-processed high-k ZrTiO<sub>x</sub> dielectric films achieve a k value and capacitance of 53 and 467 nF cm<sup>−2</sup>, and a low leakage current of 4 × 10<sup>−8</sup> A cm<sup>−2</sup> with polymer modification. High-performance organic thin film transistors with a carrier mobility of 0.58 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, and a low operating voltage of 6 V were realized with ZrTiO<sub>x</sub> dielectric films.

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16

Klepper, Karina B., Ville Miikkulainen, Ola Nilsen, et al. "Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials." MRS Proceedings 1791 (2015): 15–20. http://dx.doi.org/10.1557/opl.2015.519.

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ABSTRACTThe material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young’s modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10-10 A/cm2 (at 2 MV/cm) were obtained for films

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17

Jinesh, K. B., Y. Lamy, E. Tois, et al. "Cubic phase stabilization and improved dielectric properties of atomic-layer-deposited EryHf1-yOx thin films." Journal of Materials Research 25, no. 8 (2010): 1629–35. http://dx.doi.org/10.1557/jmr.2010.0208.

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The electrical and physical properties of atomic-layer-deposited EryHf1-yOx thin films have been investigated with different stoichiometries of erbium oxide (Er2O3) and hafnium oxide (HfO2). The as-deposited and annealed EryHf1-yOx films exhibit much higher dielectric constants than the reported k-values of the corresponding binary oxides. The highest k-value of 37.6 ± 1 is achieved with 13 at.% of erbium in the film. The enhancement in dielectric constant is due to the formation of the cubic HfO2 phase stabilized by erbium, as revealed by x-ray diffraction experiments. The annealed mixed oxid

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18

Machado, P., F. G. Figueiras, R. Vilarinho, et al. "Orthorhombic GdMnO3 Epitaxial Thin Film Grown onto SrTiO3 (110)." EPJ Web of Conferences 233 (2020): 05005. http://dx.doi.org/10.1051/epjconf/202023305005.

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GdMnO3 epitaxial thin films were deposited onto (110)-oriented SrTiO3 substrates by RF magnetron sputtering. The structure, microstructure, dielectric and magnetic properties were investigated in detail. The XRD results revealed that the GdMnO3 thin films exhibit an epitaxial strained orthorhombic symmetry and grow preferably in off-plane (001) orientation, wherein the basal lattice parameters are strained by the substrate lattice. A dielectric relaxation process was ascertained, whose activation energy is sensitive to the magnetic phase transitions, occurring at 41 K and at 20 K, respectively

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19

Zhou, H., F. G. Shi, B. Zhao, and J. Yota. "Temperature accelerated dielectric breakdown of PECVD low-k carbon doped silicon dioxide dielectric thin films." Applied Physics A 81, no. 4 (2005): 767–71. http://dx.doi.org/10.1007/s00339-004-2715-x.

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20

AKTHER, H., and A. H. BHUIYAN. "DIELECTRIC PROPERTIES OF PLASMA POLYMERIZED N,N,3,5 TETRAMETHYLANILINE THIN FILMS." Surface Review and Letters 18, no. 01n02 (2011): 53–60. http://dx.doi.org/10.1142/s0218625x11014485.

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Plasma polymerized thin films of aluminium/thin film/aluminium configuration were deposited at room temperature by a parallel plate capacitively coupled glow discharge reactor using N,N,3,5 tetramethylaniline (TMA) as a precursor. The infrared spectroscopic analyses revealed that plasma polymerized TMA (PPTMA) films contained an aromatic ring structure with NC and CH side groups, presence of C = O was also evident. The differential thermal analysis and thermogravimetric analysis of PPTMA thin film was thermally stable up to about 505 K. The scanning electron microscopy of PPTMA thin film showe

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21

Frunză, Raluca C., Brigita Kmet, Marko Jankovec, Marko Topič, and Barbara Malič. "Ta2O5-based high-K dielectric thin films from solution processed at low temperatures." Materials Research Bulletin 50 (February 2014): 323–28. http://dx.doi.org/10.1016/j.materresbull.2013.11.025.

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22

Ligatchev, V., T. K. Goh, S. Yu, and Rusli. "An Electrical, Compositional, and Structural Study on Low-k Silsesquioxane Dielectric Thin Films." Journal of The Electrochemical Society 152, no. 7 (2005): F83. http://dx.doi.org/10.1149/1.1921787.

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23

Lee, Hae-Jeong, Christopher L. Soles, Da-Wei Liu, Barry J. Bauer, and Wen-Li Wu. "Pore size distributions in low-k dielectric thin films from X-ray porosimetry." Journal of Polymer Science Part B: Polymer Physics 40, no. 19 (2002): 2170–77. http://dx.doi.org/10.1002/polb.10275.

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24

Kugler, Veronika M., Fredrik Söderlind, Denis Music, Ulf Helmersson, Johanna Andreasson, and Ture Lindbäck. "Microstructure/dielectric property relationship of low temperature synthesised (Na,K)NbOx thin films." Journal of Crystal Growth 262, no. 1-4 (2004): 322–26. http://dx.doi.org/10.1016/j.jcrysgro.2003.10.035.

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25

Yim, Jin Heong, Young Kwon Park, and Jong Ki Jeon. "Electrical/Mechanical Properties of Porous Low-k Thin Films by Using Various Supramolecule Based Porogen." Solid State Phenomena 124-126 (June 2007): 185–88. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.185.

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The porous SSQ (silsesquioxane) films were prepared by using alkoxy silyl substituted cyclodextrin (sCD) and methyl substituted cyclodextrin (tCD) based porogen. The mechanical and electrical properties of these deposited films were investigated for the applications as low dielectric materials. The mechanical properties of porous film by using sCD are worse than those by using tCD due to its high pore interconnection length. sCD templated porous films show almost constant pore diameter as a function of porogen concentration due to strong linear polymerization of the sCD molecules through polyc

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26

RATHEE, KANTA, and B. P. MALIK. "STRUCTURAL AND ELECTRICAL PROPERTIES OF TANTALUM PENTAOXIDE (Ta2O5) THIN FILMS – A REVIEW." International Journal of Modern Physics: Conference Series 22 (January 2013): 564–69. http://dx.doi.org/10.1142/s2010194513010672.

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Down scaling of complementary metal oxide semiconductor transistors has put limitations on silicon dioxide to be used as an effective dielectric. It is necessary to replace the SiO 2 with a physically thicker layer of oxides of high dielectric constant. Thus high k dielectrics are used to suppress the existing challenges for CMOS scaling. Many new oxides are being evaluated as gate dielectrics such as Ta2O5 , HfO2 , ZrO2 , La2O3 , HfO2 , TiO2 , Al2O3 , Y2O3 etc but it was soon found that these oxides in many respects have inferior electronic properties to SiO2 . But the the choice alone of sui

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27

Cheng, Haung, Lee, Chen, and Fang. "Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment." Coatings 9, no. 4 (2019): 246. http://dx.doi.org/10.3390/coatings9040246.

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Highly porous low-dielectric-constant (low-k) dielectric materials with a dielectric constant (k) less than 2.50 are needed for 32 nm and beyond technological nodes. In this study, a highly porous low-k dielectric film with a k value of 2.25, open porosity of 32.0%, and pore diameter of 1.15 nm were treated by 3-Aminopropyltrimethoxysilane (APTMS) in wet solution in order to form self-assembled monolayers (SAMs) onto it. The effects of the formation SAMs on the electrical characteristics and reliability of highly porous low-k dielectric films were characterized. As SAMs were formed onto the hi

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28

Stan, Gheorghe, Sean W. King, and Robert F. Cook. "Elastic modulus of low-k dielectric thin films measured by load-dependent contact-resonance atomic force microscopy." Journal of Materials Research 24, no. 9 (2009): 2960–64. http://dx.doi.org/10.1557/jmr.2009.0357.

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Correlated force and contact resonance versus displacement responses have been resolved using load-dependent contact-resonance atomic force microscopy (AFM) to determine the elastic modulus of low-k dielectric thin films. The measurements consisted of recording simultaneously both the deflection and resonance frequency shift of an AFM cantilever probe as the probe was gradually brought in and out of contact. As the applied forces were restricted to the range of adhesive forces, low-k dielectric films of elastic modulus varying from GPa to hundreds of GPa were measurable in this investigation.

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29

TRIPPE, S. C., and R. D. MANSANO. "STUDY OF FLUORINE ADDITION INFLUENCE IN THE DIELECTRIC CONSTANT OF DIAMOND-LIKE CARBON THIN FILM DEPOSITED BY REACTIVE SPUTTERING." Modern Physics Letters B 16, no. 15n16 (2002): 577–82. http://dx.doi.org/10.1142/s0217984902004111.

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The hydrogenated amorphous carbon films (a-C:H) or DLC (Diamond-Like Carbon) films are well known for exhibiting high electrical resistivity, low dielectric constant, high mechanical hardness, low friction coefficient, low superficial roughness and also for being inert. In this paper, we produced fluorinated DLC films (a-C:F), and studied the effect of adding CF 4 on the above-mentioned properties of DLC films. These films were produced by a reactive RF magnetron sputtering system using a target of pure carbon in stable graphite allotrope. We performed measurements of electrical characteristic

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30

Ono, Shoko S., Yasuhisa Kayaba, Hirofumi Tanaka, Hiroko Wachi, and Koji Inoue. "Formation of Ultra-Thin Pore Seal Layer on Porous Low-k Films." MRS Proceedings 1791 (2015): 7–13. http://dx.doi.org/10.1557/opl.2015.517.

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ABSTRACTIn order to integrate porous dielectric materials into the next generation of Cu/low-k interconnect, the porous material has to be sealed against metal barrier precursor. We have reported pore sealants which forms ultra-thin (< 3 nm-thick) layer on top of the surface of porous low-k film while the pore sealant does not diffuse into pores. In this study, it was investigated how pore seal layer is formed on the surface of porous material and how pore mouths are sealed by pore seal layer. It was found that 1) thickness of the pore seal layer is well-controlled in the range < 5 nm, b

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31

Bouledjnib, Leila, Salah Sahli, Azziz Zenasni, Patrice Raynaud, and Yvan Segui. "Investigation on Thin Films Deposited by PECVD from a DiPhenylMethylSilane (DPMS) Vapors or Mixed with Oxygen for Low-K Material Application." Advanced Materials Research 227 (April 2011): 35–38. http://dx.doi.org/10.4028/www.scientific.net/amr.227.35.

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A new class of low-k materials thin films, deposited from a DiPhenyleMethylSilane (DPMS) vapors was prepared using PECVD technique. These films are elaborated in microwave excited DECR plasma reactor (Distributed Electron Cyclotron Resonance) from pure DiPhenylMethylSilane (DPMS) using various plasma discharge power (100-400 W) or mixed with 50% of oxygen (O2).The improvements of film properties were investigated by capacitance–frequency (C–f), current–voltage (I–V) techniques and Fourier transform infrared spectroscopy (FTIR). The obtained results show that an increase in plasma discharges po

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32

Monteduro, Anna Grazia, Zoobia Ameer, Maurizio Martino, et al. "Dielectric investigation of high-k yttrium copper titanate thin films." Journal of Materials Chemistry C 4, no. 5 (2016): 1080–87. http://dx.doi.org/10.1039/c5tc03189c.

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33

Lu, T.-M., and J. A. Moore. "Vapor Deposition of Low-Dielectric-Constant Polymeric Thin Films." MRS Bulletin 22, no. 10 (1997): 28–31. http://dx.doi.org/10.1557/s0883769400034163.

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For devices with feature sizes below 0.18 μm, it is desirable to have materials with a dielectric constant below 2.5 as interlayer dielectrics. Polymeric materials are possible candidates. There are two main strategies to grow polymeric films. The most widely used method is the spin-on technique. The other method is by vapor deposition. Although vapor deposition is less common, it has several attractive features that look quite promising, especially when the wafer size becomes very large.There are several advantages to vapor-deposited polymers:(1) The deposition of the polymers is a dry proces

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34

Sa, Y. K., Junghwan Bang, Junhyuk Son, Dong-Yurl Yu, and Yun-Chan Kim. "Enhanced Thermo–Mechanical Reliability of Ultralow-K Dielectrics with Self-Organized Molecular Pores." Materials 14, no. 9 (2021): 2284. http://dx.doi.org/10.3390/ma14092284.

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This paper reported the enhancement in thermo-mechanical properties and chemical stability of porous SiCOH dielectric thin films fabricated with molecularly scaled pores of uniform size and distribution. The resulting porous dielectric thin films were found to exhibit far stronger resistance to thermo-mechanical instability mechanisms common to conventional SiCOH dielectric thin films without forgoing an ultralow dielectric constant (i.e., ultralow-k). Specifically, the elastic modulus measured by nano-indentation was 13 GPa, which was substantially higher than the value of 6 GPa for a porous

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35

Jo, Jeong-Wan, Jingu Kang, Kyung-Tae Kim, et al. "Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices." Materials 13, no. 23 (2020): 5571. http://dx.doi.org/10.3390/ma13235571.

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The development of novel dielectric materials with reliable dielectric properties and low-temperature processibility is crucial to manufacturing flexible and high-performance organic thin-film transistors (OTFTs) for next-generation roll-to-roll organic electronics. Here, we investigate the solution-based fabrication of high-k aluminum oxide (Al2O3) thin films for high-performance OTFTs. Nanocluster-based Al2O3 films fabricated by highly energetic photochemical activation, which allows low-temperature processing, are compared to the conventional nitrate-based Al2O3 films. A wide array of spect

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36

Daly, Brian C., Sheldon T. Bailey, Ratnasingham Sooryakumar, and Sean W. King. "Noncontact optical metrologies for Young’s modulus measurements of nanoporous low-k dielectric thin films." Journal of Nanophotonics 7, no. 1 (2013): 073094. http://dx.doi.org/10.1117/1.jnp.7.073094.

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37

Milosevic, Milan, and Sean W. King. "Analysis of Low-k Dielectric Thin Films on Thick Substrates by Transmission FTIR Spectroscopy." ECS Journal of Solid State Science and Technology 4, no. 1 (2014): N3146—N3152. http://dx.doi.org/10.1149/2.0231501jss.

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38

Hyeon Lee, Jingyu, Yi Yeol Lyu, Mong Sup Lee, Jin Heong Yim, and Sang Youl Kim. "Characterization of Nanoporous Low Dielectric Polysilsesquioxane Thin Films." Key Engineering Materials 277-279 (January 2005): 907–11. http://dx.doi.org/10.4028/www.scientific.net/kem.277-279.907.

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Poly(methyl-co-cyclosiloxane bearing silsesquioxane)s (P(M-co-CSSQs)) were prepared. Using poly(e-caprolactone) (PCL) as a template, PCL / P(M-co-CSSQ) nanohybrid films were fabricated. The electrical, morphological, and mechanical properties of the PCL / P(M-co-CSSQ) films were investigated. The dielectric constant of a cured PCL / P(M-co-CSSQ) film at 420°C scaled down from 2.55 to 2.05 and refractive index from 1.41 to 1.33 when 20 vol. % of the PCL was admixed with the polymer matrix. The elastic modulus and hardness of the cured PCL / P(Mco- CSSQ) (2:8, vol./vol.) film were 2.50 and 0.32

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39

Dąbrowski, Jaroslaw, Seiichi Miyazaki, S. Inumiya, et al. "The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics." Materials Science Forum 608 (December 2008): 55–109. http://dx.doi.org/10.4028/www.scientific.net/msf.608.55.

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Electrical properties of thin high-k dielectric films are influenced (or even governed) by the presence of macroscopic, microscopic and atomic-size defects. For most applications, a structurally perfect dielectric material with moderate parameters would have sufficiently low leakage and sufficiently long lifetime. But defects open new paths for carrier transport, increasing the currents by orders of magnitude, causing instabilities due to charge trapping, and promoting the formation of defects responsible for electrical breakdown events and for the failure of the film. We discuss how currents

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40

Vella, Joseph B., Alex A. Volinsky, Indira S. Adhihetty, N. V. Edwards, and William W. Gerberich. "Nanoindentation of Silicate Low-K Dielectric Thin Films." MRS Proceedings 716 (2002). http://dx.doi.org/10.1557/proc-716-b12.13.

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AbstractThe capabilities of nanoindentation to characterize low-k organo silicate glass (OSG) thin films is explored as a relatively rapid and inexpensive metric of mechanical properties, adhesion strength, and fracture toughness. One method of decreasing the static dielectric constant of OSG interlayer dielectrics requires the introduction of porosity in the material which has a dramatic impact on its mechanical and toughness properties. Percolation theory is used to formulate a correlation between porosity and elastic modulus. Using cube corner diamond indentation and scratch testing fractur

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41

Iacopi, F., S. H. Brongersma, T. J. Abell, and K. Maex. "Buckling instabilities of thin cap layers deposited onto low-k dielectric films." MRS Proceedings 734 (2002). http://dx.doi.org/10.1557/proc-734-b9.67.

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ABSTRACTCompressive stresses in thin capping films deposited onto low-k dielectric substrates are particularly prone to relaxation through buckling. This is due to insufficient cap/low-k film adhesion energy and to the compliance of low dielectric constant films. Low-k dielectric films, especially when porous, have low elastic modulus and demonstrate poor adhesion to other layers.When adhesion is poor the cap film can locally buckle as if unconstrained. The buckle front can propagate like a crack and lead to complete delamination of the cap layer. If the cap/low-k film adhesive energy is high,

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42

"SURMOFs as Ultra-low k Dielectric Thin Films." ECS Meeting Abstracts, 2014. http://dx.doi.org/10.1149/ma2014-02/44/2122.

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43

Johnson, Mark, Zijian Li, Yushan Yan, and Junlan Wang. "Determination of the Modulus and Hardness of Spin-on Zeolite Low-K Thin Films." MRS Proceedings 880 (2005). http://dx.doi.org/10.1557/proc-880-bb7.4.

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AbstractWith the semiconductor technologies continuously pushing the miniaturization limits, there is a growing interest in developing novel low dielectric constant (low-k) materials to replace traditional dense SiO2 based insulators. In order to survive the multi-step integration process and provide reliable material and structure for the desired integrated circuit (IC) functions, the new low-k materials have to be mechanically strong and stable. Thus the material selection and mechanical characterization are vital in the successful development of next generation low-k dielectrics. A new clas

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44

Grill, A., V. Patel, K. P. Rodbell, E. Huang, S. Christiansen, and M. R. Baklanov. "Characteristics of low-k and ultralow-k PECVD deposited SiCOH films." MRS Proceedings 716 (2002). http://dx.doi.org/10.1557/proc-716-b12.3.

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AbstractWe have shown previously that the dielectric constants of PECVD prepared SiCOH dielectrics can be extended to ultralow-k values of k=2.0. The reduction in the dielectric constants has been achieved by adding an organic precursor to the tetramethylcyclotetrasiloxane (TMCTS) used for the preparation of the SiCOH dielectric and annealing the films to remove the thermally less-stable organic CHx fractions from the films, thereby adding porosity and reducing the density of the films. To assess the effects of the reduction of the dielectric constant on other physical properties of the materi

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Selbrede, Steven C., and Martin L. Zucker. "Characterization of Parylene-N Thin Films for Low-K Vlsi Applications." MRS Proceedings 476 (1997). http://dx.doi.org/10.1557/proc-476-219.

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AbstractParylene-N thin films were characterized from the viewpoint of advanced VLSI intermetal dielectric applications. All films were deposited in a prototype production system that included a vacuum chamber, electrostatic cold chuck and a parylene vapor delivery system. Chuck temperatures as low as -30 °C were achieved. The deposition rate was found to be strongly dependent on wafer temperature, increasing dramatically as wafer temperature is reduced. Deposition rate was also strongly dependent on the parylene vapor flow rate and process pressure. These strong dependencies require that extr

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Ramos, Teresa, Kevin Roderick, Alok Maskara, and Douglas M. Smith. "Nanoporous Silica for Low k Dielectrics." MRS Proceedings 443 (1996). http://dx.doi.org/10.1557/proc-443-91.

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AbstractConsiderable progress has been made in development of thin films of nanoporous silica (also known as aerogels or low density xerogels) for ILD and IMD applications. Advantages of these materials include high thermal stability, small pore size, and similarity to conventional deposition processes, precursors and final material (silica). We have previously reported success in synthesizing low density, low dielectric constant (K<2) thin films using ambient pressure processing. However, processing of those films was complicated due to large number of process steps and difficulties in ind

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Hyeon-Lee, Jingyu, Jong-Baek Seon, Myungsup Jung, and Jongmin Kim. "Mesoporous Low Dielectric Poly(silsesquioxane) Thin Films Templated by Various Surfactants." MRS Proceedings 863 (2005). http://dx.doi.org/10.1557/proc-863-b8.4.

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AbstractMesoporous low dielectric poly(silsesquioxane) thin films have been fabricated by templating various surfactants such as cetyltrimethyl ammonium bromide (CTAB) or 4-octylphenol polyethoxylate (OPE) in the silsesquioxane polymer matrix and their properties of the thin films characterized by electrical, mechanical and structural characterization. Depending on the types of the surfactants, mesoporous poly(silsesquioxane) thin films with different porosities have been formed. The dielectric constant (k) of the films depended on the content or porosity of the surfactants. The dielectric con

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48

Hedden, Ronald C., Barry J. Bauer, and Hae-Jeong Lee. "Characterization of Nanoporous Low-k Thin Films by Contrast Match SANS." MRS Proceedings 766 (2003). http://dx.doi.org/10.1557/proc-766-e9.7.

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AbstractSmall-angle neutron scattering (SANS) contrast variation is used to characterize matrix properties and pore size in nanoporous low-dielectric constant (low-k) thin films. Using a vapor adsorption technique, SANS measurements are used to identify a “contrast match” solvent mixture containing the hydrogen– and deuterium-containing versions of a probe solvent. The contrast match solvent is subsequently used to conduct SANS porosimetry experiments. With information from specular X-ray reflectivity and ion scattering, the technique is useful for estimating the mass density of the matrix (wa

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Grill, A., V. Patel, K. L. Saenger, et al. "Diamondlike Carbon Materials as Low-k Dielectrics for Multilevel Interconnects in Ulsi." MRS Proceedings 443 (1996). http://dx.doi.org/10.1557/proc-443-155.

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AbstractA variety of diamondlike carbon (DLC) materials were investigated for their potential applications as low-k dielectrics for the back end of the line (BEOL) interconnect structures in ULSI circuits. Hydrogenated DLC and fluorine containing DLC (FDLC) were studied as a low-k interlevel and intralevel dielectrics (ILD), while silicon containing DLC (SiDLC) was studied as a potential low-k etch stop material between adjacent DLC based ILD layers, which can be patterned by oxygen-based plasma etchingIt was found that the dielectric constant (k) of the DLC films can be varied between >3.3

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Hu, Lili, Junlan Wang, Zijian Li, Shuang Li, and Yushan Yan. "Interfacial Adhesion of Pure-Silica-Zeolite Low-k Thin Films." MRS Proceedings 875 (2005). http://dx.doi.org/10.1557/proc-875-o10.5.

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AbstractNanoporous zeolite thin films are promising candidates as future low dielectric constant (low-k) materials. During the integration process with other semiconductor materials, the residual stresses resulting from the synthesis processes may cause fracture or delamination of the thin films. In order to achieve high quality low-k zeolite thin films, the evaluation of the adhesion performance is important. In this paper, laser spallation technique is utilized to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces prepared using three different processes. The e

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