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Dissertations / Theses on the topic 'Low loss dielectric materials'

Author: Grafiati

Published: 4 June 2021

Last updated: 3 February 2022

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1

Addington, J. Shawn. "Wideband electrical characterization of multilayer low-loss dielectric materials." Thesis, This resource online, 1992. http://scholar.lib.vt.edu/theses/available/etd-10312009-020154/.

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2

Gasi, Jasmin. "Design, Fabrication and Validation of High-permittivity Low-loss Microwave Material for Biomedical Sensor." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-364035.

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Abstract The purpose of this task is to synthesize a dielectric substrate material through a sintering process, which can be used for non-invasive physiological sensor development. Low loss, high dielectric constant ceramic material is used. Sintering process is employed to ensure stable structure and homogeneous dielectric properties of the substrate. Samples were prepared with TiO2 and in combination with CuO and Al2O3. All samples were measured and validated in 500 MHz to 20 GHz frequency range. Characterization measurements were performed with a Vector Network Analyzer, FieldFox N9918A, an

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3

Sun, Minwei. "Applying zeolites as low dielectric constant (low-k) materials." Diss., UC access only, 2009. http://proquest.umi.com/pqdweb?index=14&did=1907180231&SrchMode=1&sid=4&Fmt=2&VInst=PROD&VType=PQD&RQT=309&VName=PQD&TS=1270059102&clientId=48051.

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4

Liu, Tong. "Dielectric spectroscopy of very low loss model power cables." Thesis, University of Leicester, 2010. http://hdl.handle.net/2381/8375.

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This research study focuses on the dielectric response of XLPE model power cables that have combinations of homo- and co-polymer insulation with furnace and acetylene carbon black semicon shields. Three dielectric spectroscopy techniques, which are frequency response analyzer and transformer ratio bridge in both frequency domain, and charging/discharging current system in time domain, were jointly used to measure the low loss XLPE cables in the frequency range from 10-4Hz to 104Hz at temperatures from 20°C to 80°C. Degassing effects and thermal ageing effects have also been studied with the sp

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5

Tripathi, Pragya. "Dielectric spectroscopy studies of low-disorder and low-dimensional materials." Doctoral thesis, Universitat Politècnica de Catalunya, 2016. http://hdl.handle.net/10803/404420.

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In this thesis we employ dielectric spectroscopy (in different implementations) to study the dielectric properties of different materials ranging from completely disordered supercooled liquids to low-disorder solids with only ratcheting reorientational motions, to low-dimensional systems such as thin films or needle-like crystals. The probed material properties include the electrical conductivity, the space-charge processes due to sample heterogeneities, molecular dynamics, hydrogen-bond dynamics, and phase-transition temperature and kinetics. To study materials in thin film form, we implement

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6

McGowan, Brian Thomas. "Magnetoresistance of a Low-k Dielectric." Thesis, State University of New York at Albany, 2016. http://pqdtopen.proquest.com/#viewpdf?dispub=10100441.

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<p> Low-k dielectrics have been incorporated into advanced computer chip technologies as a part of the continuous effort to improve computer chip performance. One drawback associated with the implementation of low-k dielectrics is the large leakage current which conducts through the material, relative to silica. Another drawback is that the breakdown voltage of low-k dielectrics is low, relative to silica [1]. This low breakdown voltage makes accurate reliability assessment of the failure mode time dependent dielectric breakdown (TDDB) in low-k dielectrics critical for the successful implement

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7

Martini, David M. Kelber Jeffry Alan. "Metallization and modification of low-k dielectric materials." [Denton, Tex.] : University of North Texas, 2008. http://digital.library.unt.edu/permalink/meta-dc-9754.

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8

Martini, David M. "Metallization and Modification of Low-k Dielectric Materials." Thesis, University of North Texas, 2008. https://digital.library.unt.edu/ark:/67531/metadc9754/.

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Aluminum was deposited onto both Teflon AF and Parylene AF surfaces by chemical vapor deposition of trimethylaluminum. This work shows that similar thin film (100 Angstroms) aluminum oxide adlayers form on both polymers at the low temperature dosing conditions used in the studies. Upon anneal to room temperature and above, defluorination of the polymer surfaces increased and resulted in fluorinated aluminum oxide adlayers; the adlayers were thermally stable to the highest temperatures tested (600 K). Angle-resolved spectra showed higher levels of fluorination toward the polymer/adlayer interfa

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9

Liao, Ling. "Low loss polysilicon waveguides for silicon photonics." Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/10230.

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10

Cho, Taiheui. "Anisotropy of low dielectric constant materials and reliability of Cu/low-k interconnects /." Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.

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11

Ahn, Sang Hoon 1970. "Electrical studies of silicon and low K dielectric material." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/9130.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.<br>Includes bibliographical references (leaves 108-111).<br>Junction capacitance measurement is a well-established powerful characterization technique that allows one to explore electrical and physical properties of defects in bulk and interface of electronic materials. Capacitance-Voltage (CV) measures the overall net carrier concentration and a built-in voltage for a diode junction. Deep level transient spectroscopy (DLTS) as one of the most sensitive electrical measurement techniques can

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12

Christensen, Justin. "Electron Yield Measurements of High-Yield, Low-Conductivity Dielectric Materials." DigitalCommons@USU, 2017. https://digitalcommons.usu.edu/etd/6694.

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Materials exposed to the space plasma environment acquire electric charge, which can have harmful effects if it leads to arcing or electrostatic breakdown of important spacecraft components. In fact, spacecraft charging is the leading environmentally induced cause of spacecraft anomalies. This study focuses on measuring electron yield, a property of materials that describes how many electrons are ejected from a material under energetic electron bombardment, which can vary depending on the energy of incident electrons. Intrinsic electron yield is defined as the average number of electrons emitt

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13

Seligman, Jeffrey M. "Spectral Characterization of Dielectric Materials Using Terahertz Measurement Systems." Diss., The University of Arizona, 2015. http://hdl.handle.net/10150/566237.

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The performance of modern high frequency components and electronic systems are often limited by the properties of the materials from which they are made. Over the past decade, there has been an increased emphasis on the development of new, high performance dielectrics for use in high frequency systems. The development of these materials requires novel broadband characterization, instrumentation, and extraction techniques, from which models can be formulated. For this project several types of dielectric sheets were characterized at terahertz (THz) frequencies using quasi-optical (free-space) te

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14

Simkovic, Viktor. "Novel Low Dielectric Constant Thin Film Materials by Chemical Vapor Deposition." Thesis, Virginia Tech, 1999. http://hdl.handle.net/10919/35627.

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A modified CVD reactor was designed with a deposition chamber capable of accomodating 8" wafers, with the capacity to remotely pyrolyze two different precursors. The design was based on a previous working reactor, with the most notable improvements being a showerhead design for more even delivery of gaseous precursor and a separate heating control of the substrate holder and deposition chamber walls. The performance of the reactor was analyzed by testing the pressure gradients within and the thickness uniformity of films deposited on 8" wafers. The reactor exhibited a linear pressure gradie

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15

Chen, Xinyue. "Understanding Loss Mechanisms and Enhancing Dielectric Properties of Multilayer Polymer Films for Capacitor Applications." Case Western Reserve University School of Graduate Studies / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=case1584527483998243.

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16

Sparacin, Daniel Knight. "Process and design techniques for low loss integrated silicon photonics." Thesis, Massachusetts Institute of Technology, 2006. http://hdl.handle.net/1721.1/37690.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2006.<br>Includes bibliographical references (p. 256-260).<br>Microprocessors have truly revolutionized the efficiency of the world due to the high-volume and low-cost of complimentary metal oxide semiconductor (CMOS) process technology. However, the traditional scaling methods by which chips improve are soon to end. The continued drive towards smaller circuit elements and dense chip architecture has yielded to power consumption, heat production, and electromagnetic interference (RC-delay) limit

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17

Curtis, John. "Experimental Verification for Microwave Processing of Materials in a Single Mode Rectangular Resonant Cavity." Thesis, Virginia Tech, 1999. http://hdl.handle.net/10919/34627.

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The benefits of applying microwave energy to material processing techniques have been well documented and studied. The potential benefits over conventional oven heating include faster processing times, more uniform heating, more consistent product quality, and the possibility of precise control. The actual implementation of microwave technology has been lacking and the benefits have gone largely unrealized. This is due in part to the temperature dependence of the dielectric loss of many industrial materials such as ceramics and polymers. These materials absorb more microwave energy as th

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18

Agraharam, Sairam. "Plasma assisted deposition of low dielectric constant fluorocarbon materials for microelectronic applications." Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/11896.

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19

Blanco, Agnes M. Padovani. "Low dielectric constant porous spin-on glass for microelectronic applications." Diss., Georgia Institute of Technology, 2002. http://hdl.handle.net/1853/11840.

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20

Kozinsky, Boris 1978. "Dielectric response and interactions in low-dimensional carbon materials from first principles calculations." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/45409.

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21

Tong, Jinhong. "Study of Interactions Between Diffusion Barrier Layers and Low-k Dielectric Materials for Copper/Low-k Integration." Thesis, University of North Texas, 2003. https://digital.library.unt.edu/ark:/67531/metadc4384/.

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The shift to the Cu/low-k interconnect scheme requires the development of diffusion barrier/adhesion promoter materials that provide excellent performance in preventing the diffusion and intermixing of Cu into the adjacent dielectrics. The integration of Cu with low-k materials may decrease RC delays in signal propagation but pose additional problems because such materials are often porous and contain significant amounts of carbon. Therefore barrier metal diffusion into the dielectric and the formation of interfacial carbides and oxides are of significant concern. The objective of the presen

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22

Mohn, Michael Johannes [Verfasser]. "Energy-filtered TEM and low-loss EELS of 2D materials / Michael Johannes Mohn." Ulm : Universität Ulm, 2020. http://d-nb.info/122210931X/34.

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23

Brás, Ana Rita Elias. "Influence of constraining and confinement in the molecular mobility of low molecular weight materials." Doctoral thesis, FCT - UNL, 2009. http://hdl.handle.net/10362/2670.

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Dissertation presented to obtain a Ph.D. Degree in Chemical Physics<br>Despite the importance that the glassy state has nowadays, the transition from liquid to the glass, glass transition, still remains a matter of debate which constitutes one of the great condensed matter physics challenges. Since this fact is closely related to the cooperativity dynamics, the study of this phenomenon in glass-forming liquids under confinement in the nanometer scale, has recently emerged as a strategy to clarify factors such as the existence of an inherent length scale of the cooperative dynamics that determ

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24

McConnell, Brian Gregory. "A Coupled Heat Transfer and Electromagnetic Model for Simulating Microwave Heating of Thin Dielectric Materials in a Resonant Cavity." Thesis, Virginia Tech, 1999. http://hdl.handle.net/10919/36179.

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Microwave heating is an emerging but still underutilized tool in modern industrial applications. The task of designing microwave applicators for heating industrial materials with temperature-dependent properties is challenging, and trial-and-error system prototyping is an expensive and wasteful means to accomplish this goal. The purpose of this work is to combine existing heat transfer and electromagnetic models to provide a complete simulation for heating dielectric materials in a resonant microwave cavity. The numerical simulation is validated by comparison to several independent sets of

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25

Wang, Peng. "Characterization of Porous Low-κ Dielectric Films by Combined Scattering Techniques". University of Cincinnati / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1181920566.

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26

Osei-Yiadom, Eric. "Effects of Plasma, Temperature and Chemical Reactions on Porous Low Dielectric Films for Semiconductor Devices." Thesis, University of North Texas, 2010. https://digital.library.unt.edu/ark:/67531/metadc33192/.

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Low-dielectric (k) films are one of the performance drivers for continued scaling of integrated circuit devices. These films are needed in microelectronic device interconnects to lower power consumption and minimize cross talk between metal lines that "interconnect" transistors. Low-k materials currently in production for the 45 and 65 nm node are most often organosilicate glasses (OSG) with dielectric constants near 2.8 and nominal porosities of 8-10%. The next generation of low-k materials will require k values 2.6 and below for the 45 nm device generation and beyond. The continuous decrease

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27

Chevalliot, St¿¿¿¿phanie. "Advancing the Frontiers of Low Voltage Electrowetting on Dielectrics through a Complete Understanding of Three Phases System Interactions." University of Cincinnati / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1337888430.

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28

Buckingham, David Tracy Willis. "High-Resolution Thermal Expansion and Dielectric Relaxation Measurements on H2O and D2O Ice Ih." Thesis, Montana State University, 2017. http://pqdtopen.proquest.com/#viewpdf?dispub=10607201.

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<p> Ice Ih, formed by freezing liquid water below 273&sim;K at atmospheric pressure, is well-known and highly-studied, but some of its fundamental physical properties have mystified scientists since the early twentieth century. The thermal expansion is one of those properties; the low relative-resolution of past measurements has left questions regarding the structural isotropy and negative thermal expansion (NTE). Furthermore, the existence of relaxation phenomena near 100&sim;K, related to the residual entropy at 0&sim;K, may reveal itself through subtle features in the thermal expansion and,

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29

Kazi, Haseeb. "Plasma Interactions on Organosilicate Glass Dielectric Films and Emerging Amorphous Materials- Approach to Pore Sealing and Chemical Modifications." Thesis, University of North Texas, 2015. https://digital.library.unt.edu/ark:/67531/metadc801876/.

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In-situ x-ray photoemission (XPS) and ex-situ FTIR studies of nanoporous organosilicate glass (OSG) films point to the separate roles of radicals vs. VUV photons in the carbon abstraction. The studies indicate that reaction with O2 in presence of VUV photons (~123 nm) result in significant carbon abstraction within the bulk and that the kinetics of this process is diffusion-limited. In contrast, OSG exposed to atomic O (no VUV) results in Si-C bond scission and Si-O bond formation, but this process is self-limiting after formation of ~1 nm thick SiO2 surface layer that inhibits further diffusi

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30

Haase, Micha, Ramona Ecke, and Stefan E. Schulz. "Requirements and challenges on an alternative indirect integration regime of low-k materials." Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-207219.

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An alternative indirect integration regime of porous low-k materials was investigated. Based on a single Damascene structure the intra level dielectric SiO2 or damaged ULK was removed by using HF:H2O solutions to create free standing metal lines. The free spaces between the metal lines were refilled with a spin-on process of a low-k material. The persistence of barrier materials and copper against HF solutions, the gap fill behavior of the used spin on glass on different structure sizes and the main challenges which have to solve in the future are shown in this study.

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31

Ahmadi, Farzad. "Magnetic Micro- and Nanostructures for Electrical Machinery." University of Akron / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=akron1544521347564228.

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32

Ngohang, Franck Estimé. "Combination of mass loss cone, Fourier transforminfrared spectroscopy and electrical low pressure impactor to extend fire behaviour characterization of materials." Thesis, Lille 1, 2014. http://www.theses.fr/2014LIL10167/document.

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L’incendie reste un des sujets redoutés par les industries, les services et autres moyens de production. Ce phénomène par définition incontrôlé dans le temps et dans l’espace est souvent responsable de perte de vies et de biens. Deux types d’agression peuvent être répertoriés en cas d’incendie l’agression thermique par suite de génération de chaleur engendrant la destruction des matériaux et l’agression liée aux fumées toxiques et/ou corrosives, capables de se répandre au-delà du foyer incendie. Pour approfondir les connaissances sur le comportement au feu de matériaux tel que les câbles élect

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33

Chia-HuiSu and 蘇家慧. "Development of Low-Loss and Low Temperature Sintered Microwave Dielectric Materials." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/cy52tp.

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博士<br>國立成功大學<br>電機工程學系<br>104<br>In recent years, the wireless communication industry has experienced enormous growth, the microwave dielectric resonators (DR) having a high dielectric constant, high quality factor and near-zero temperature coefficient of resonant frequency and other features, suitable for a dielectric resonator, filters, oscillators, and duplexers. Due to the miniaturized, high performance and low cost has become the main demand of the microwave components, the high quality factor dielectric material often used in communications systems. As mentioned above, the main study of

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34

Wang, Jun-Jie, and 王俊傑. "Investigation and Application of Low Loss Microwave Dielectric Materials." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/20962508744397691045.

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博士<br>國立成功大學<br>電機工程學系碩博士班<br>95<br>Recently, many researchers emphasize the importance of microwave dielectric materials due to the rapid progress on the satellite and mobile communications such as cellular phones, wireless local area networks (WLAN), direct broadcasting satellite (DBS). For miniaturized requirements of microwave communication devices, dielectric materials must be further improved and achieve an objective of high quality. Therefore, low loss microwave dielectric materials can be utilized in designing high-quality devices in communication system. The integration of dielectric

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35

Yang, Tung-Jung, and 楊東榮. "Low Loss Dielectric Materials and Applications for Wireless Communication Components." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/02134391525750177613.

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碩士<br>國立成功大學<br>電機工程學系碩博士班<br>96<br>There are two main subjects in this paper. First, we will discuss the low loss dielectric material, and try to make temperature coefficient of resonant frequency near zero. Second, there will be a discussion of microstrip filter and improvement of circuit size in different substrates. First, the microwave dielectric properties of (1-x)ZnAl2O4-xTiO2 have been investigated. The experiment results show that (1-x)ZnAl2O4-xTiO2 has the best properties at x=0.5 and sintering temperature 1390℃ for four hours, which could reach the best dielectric properties εr~ 25

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36

"Mechanisms Responsible for Microwave Properties in High Performance Dielectric Materials." Doctoral diss., 2016. http://hdl.handle.net/2286/R.I.38414.

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abstract: Microwave properties of low-loss commercial dielectric materials are optimized by adding transition-metal dopants or alloying agents (i.e. Ni, Co, Mn) to tune the temperature coefficient of resonant frequency (τf) to zero. This occurs as a result of the temperature dependence of dielectric constant offsetting the thermal expansion. At cryogenic temperatures, the microwave loss in these dielectric materials is dominated by electron paramagnetic resonance (EPR) loss, which results from the spin-excitations of d-shell electron spins in exchange-coupled clusters. We show that the origin

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37

Yeh, Chao-Wei, and 葉昭緯. "Measurement and Study of the Dielectric Properties and Thickness of the Low-Loss Materials by 1-D Photonic Crystal." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/20897529408797603587.

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碩士<br>國立交通大學<br>光電工程系所<br>95<br>By using the properties of 1-D photonic crystal, we designed two different structures in this thesis. By measuring the transmittance with these structures, we obtained the optimized absorption coefficient by Transfer Matrix Method. Consequently, we improved the accuracy of absorption coefficient measurement for low-loss materials in free-space. At the same time, we applied the tunable modules of photonic crystal to obtain the absorption coefficient in different frequencies with the shift of transmission frequencies. Besides the theoretical simulation, we also ve

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38

CHEN, LIANG-CHO, and 陳亮卓. "Effects of dopants on the microwave dielectric properties of Mg4Ta2O9 and Li2Mg2W2O9 low loss material." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/8jzn57.

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碩士<br>國立臺北科技大學<br>材料科學與工程研究所<br>107<br>The Mg4Ta2O9 and Li2Mg2W2O9 ceramics were prepared by solid state reaction and their microwave dielectric properties and crystal structure were investigated in this study. First, the Mg4Ta2O9 ceramic sintered at 1500ºC for 4 hours shows good dielectric properties. The dielectric constant (εr) is 12.1, the quality factor (Q×f) is 21,161 GHz (@10.1 GHz), and the temperature coefficient of resonant frequency (τf) is -52 ppm/ºC. The propose of Mg4Ta2O9 ceramic doped with Ba2+, Ca2+ and Co2+ substituted for Mg2+ is to improve the microwave dielectric propertie

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39

Wang, Wen-Hsiang, and 王文祥. "Low loss optical mixed film and dielectric mirror." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/51326173756301442175.

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博士<br>國立清華大學<br>電機工程學系<br>87<br>Abstract Reduction of optical loss for dielectric high reflectance mirrors can promote the navigation accuracy of ring laser gyroscope, elevate the laser damage threshold of high-energy laser and enhance the sensitivity of laser interferometer. In application of visible wavelength region, titanium dioxide (TiO2) film is the most commonly utilized high refractive index material in the multi-layers dielettric mirror fabricated. Ion beam sputtering is the commond method to deposited these films, because it produces films with better quality such as high

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40

Καραθανάσης, Κωνσταντίνος. "Θεωρητική ανάλυση και πειραματική μελέτη ενός παθητικού μικροκυματικού συστήματος για διαγνωστικές εφαρμογές με χρήση ραδιομετρίας". Thesis, 2008. http://nemertes.lis.upatras.gr/jspui/handle/10889/941.

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Η εφαρμογή της μικροκυματικής ραδιομετρίας έχει επεκταθεί στο χώρο της ιατρικής, καθότι τα τελευταία χρόνια γίνονται έρευνες με σκοπό την εκμετάλλευση των ιδιοτήτων της μεθόδου στη διαγνωστική αλλά και στη θεραπευτική ιατρική. Στα πλαίσια μιας διδακτορικής διατριβής που εκπονήθηκε στο Εργαστήριο Μικροκυμάτων και Οπτικών Ινών (ΕΜΟΙ) της σχολής Ηλεκτρολόγων Μηχανικών και Μηχανικών Υπολογιστών του Εθνικού Μετσόβιου Πολυτεχνείου και ολοκληρώθηκε το 2003, κατασκευάστηκε ένα τρισδιάστατο σύστημα παθητικής μικροκυματικής ραδιομετρικής απεικόνισης (ΜiRaIS) για διαγνωστικές εφαρμογές εγκεφάλου. Στη συγ

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41

Vedula, Ramakrishna. "Low dielectric constant materials and processes for interlayer dielectric applications." 2006. https://scholarworks.umass.edu/dissertations/AAI3206194.

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At 0.18 microns and below minimum device dimensions in Ultra Large Scale Integrated Circuits, signal net parasitic delay amounts to 80% of the overall path delay. This leads to serious problems relating to signal timing, crosstalk, noise and power consumption. Although Copper is being used as an alternative to Aluminum interconnects to reduce the resistive component of the RC delays, finding a suitable material to replace Silicon Dioxide (SiO2) as the interlayer dielectric poses serious challenges. Most of the inorganic candidates are variants of SiO2, while the most prominent among polymeric

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42

Yu-WeiTseng and 曾昱瑋. "Development and Applications of Low-Loss Microwave Dielectric Resonators." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/98142065375146953360.

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博士<br>國立成功大學<br>電機工程學系碩博士班<br>101<br>The microwave dielectric resonators (DR) having a high dielectric constant, high quality factor and near-zero temperature coefficient of resonant frequency and other features, suitable for a dielectric resonator antennas, filters, oscillators, and duplexers. In recent years, due to the evolution and development of microwave communication system, miniaturized, high performance and low cost has become the main demand of the microwave components. Therefore, the high quality factor dielectric material often used in communications systems. With low loss characte

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43

"Mechanisms of Microwave Loss Tangent in High Performance Dielectric Materials." Doctoral diss., 2013. http://hdl.handle.net/2286/R.I.16430.

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abstract: The mechanism of loss in high performance microwave dielectrics with complex perovskite structure, including Ba(Zn1/3Ta2/3)O3, Ba(Cd1/3Ta2/3)O3, ZrTiO4-ZnNb2O6, Ba(Zn1/3Nb2/3)O3, and BaTi4O9-BaZn2Ti4O11, has been investigated. We studied materials synthesized in our own lab and from commercial vendors. Then the measured loss tangent was correlated to the optical, structural, and electrical properties of the material. To accurately and quantitatively determine the microwave loss and Electron Paramagnetic Resonance (EPR) spectra as a function of temperature and magnetic field, we devel

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44

Bao, Junjing 1981. "Interaction between plasma and low-k dielectric materials." Thesis, 2008. http://hdl.handle.net/2152/3820.

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With the scaling of devices, integration of porous ultra low-κ dielectric materials into Cu interconnect becomes necessary. Low-k dielectric materials usually consist of a certain number of methyl groups and pores incorporated into a SiO₂ backbone structure to reduce the dielectric constant. They are frequently exposed to various plasmas, since plasma is widely used in VLSI semiconductor fabrication such as etching, ashing and deposition. This dissertation is aimed at exploring the interaction between plasma and low-κ dielectric surfaces. First, plasma assisted the atomic layer deposition (ALD

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Chen, Jun-Ming, and 陳俊銘. "Process Study of Porous Low Dielectric Constant Materials." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/36452082380840136700.

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碩士<br>樹德科技大學<br>電腦與通訊研究所<br>93<br>As feature sizes of devices are continuously scaled down and shrink into deep submicron regime, the rapid increase in resistance-capacitance (RC) time delay is becoming one of the major bottlenecks for deep submicron devices. Much attention has been paid to the use of porous low dielectric constant materials, instead of conventional SiO2, to reduce interconnect capacitance and address the RC delay problem. This paper discussed the plasma etching process, photoresist removal process, cupper diffusion and mechanical strength improvement of mesoporous silica. In

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Tang, Chien-Fu, and 唐健夫. "Study on Siloxane Based Low dielectric Constant Materials." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/25981374709808651073.

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碩士<br>國立交通大學<br>電子工程系<br>89<br>As IC technology moves into the deep submicron regime, it is required to decrease the metal pitch and to increase the number of metal layers for interconnect to accommodate the increased packing density and functional complexity. This makes propagation delay in interconnects becomes an appreciable fraction of the total time delay. Use of the spin on glass (SOG) low dielectric constant material (low-k) as the intermetal dielectric (IMD) results in low inter-line capacitance, high speed, low power dissipation, and low cross-talk noise. An organic SOG, Hybird-Organi

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Lin, Zen-Kuan, and 林仁寬. "X-ray Exposure on Low Dielectric Constant Materials." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/77642812227254364342.

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碩士<br>國立中山大學<br>物理學系研究所<br>89<br>Abstract As integrated circuit dimensions continue to shrink, interconnect RC delay becomes an increasingly serious problem. Fabrication of interconnect structures using new materials of low resistivity and low permittivity to replace the traditional Al and SiO2 interconnect technology is in high demand. Specially, copper and low dielectric constant (low-k) polymers show great promise. Among various low-k materials, spin-on glass (SOG) materials have been widely used as an interlayer dielectric in multilevel interconnections because they are applied easily

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Wu, Min-Je, and 吳旻哲. "Investigations of low temperature sintered dielectric materialsdielectric materials." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/96636205041942542046.

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碩士<br>國立聯合大學<br>材料科學工程學系碩士班<br>95<br>Reduced sintering temperature BaTiO3 ceramics can be achieved by a two stage sintering process. A CBS glass and LiF were added into BaTiO3 to improve the connecting of BaTiO3 particles and maintained the dielectric constant and quality factor of BaTiO3. The CBS glass added BaTiO3 ceramic exhibited obvious difference in shrinkage rate between one and two state sintering processes in the same sintering condition. The BaTiO3 particles were connected each other by soften CBS glass and the liquid phase was introduced by LiF melting, the liquid phase sintering ph

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Tu, Hsien Ming, and 杜賢明. "Study of Advanced Low Dielectric Constant Materials for ULSI Intermetal Dielectric Applications." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/50335301534663409081.

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碩士<br>國立交通大學<br>電子工程系<br>87<br>For ULSI circuits when feature size is scaled into the deep submicron region, The speed of the devices will be significantly limited by the interconnect delay. Low dielectric constant (K) materials will play a major role, with copper as the interconnect material, in offering to minimize the interconnect RC delay. A variety of inorganic or organic polymers, xerogel are being considered for low k applications. This thesis will describe two new siloxanes and porous xerogel with ultra-low dielectric constant for low k applications. We will explore thermal stability,

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Tu, Yi-Chuan, and 凃ㄧ權. "Integration of Copper and Porous Low Dielectric Constant Materials." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/99868972638712822673.

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碩士<br>國立交通大學<br>機械工程系<br>90<br>As the devices become smaller and dimensions decline to sub-micron scale, the performance of integrated circuits will be significantly limited by the interconnect RC time delay. To alleviate these impacts, copper and low dielectric constant materials are used to replace aluminum and silicon oxide as the conduction and dielectric layers in metallization system. Since copper diffuses fast in silicon substrate, a diffusion barrier with good thermal stability, contact resistance, and low resistivity is needed in Cu/Si contact system. Reactively sputtered T

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