Relevant bibliographies by topics / Low Noise figure LNA

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Low Noise figure LNA'

Author: Grafiati
Published: 4 June 2021
Last updated: 19 February 2022

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Journal articles on the topic "Low Noise figure LNA"

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Radic, Jelena, Alena Djugova, and Mirjana Videnovic-Misic. "Influence of current reuse LNA circuit parameters on its noise figure." Serbian Journal of Electrical Engineering 6, no. 3 (2009): 439–49. http://dx.doi.org/10.2298/sjee0903439r.

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A 2.4 GHz low noise amplifier (LNA) with a bias current reuse technique is proposed in this work. To obtain the optimum noise figure (NF) value, dependence of NF on its most influential LNA parameters has been analyzed. Taking into account the LNA design requirements for other figures of merit, values of the circuit parameters are given for the optimum noise figure.
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Manjula, S., R. Karthikeyan, S. Karthick, N. Logesh, and M. Logeshkumar. "Optimized Design of Low Power Complementary Metal Oxide Semiconductor Low Noise Amplifier for Zigbee Application." Journal of Computational and Theoretical Nanoscience 18, no. 4 (April 1, 2021): 1327–30. http://dx.doi.org/10.1166/jctn.2021.9387.

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An optimized high gain low power low noise amplifier (LNA) is presented using 90 nm CMOS process at 2.4 GHz frequency for Zigbee applications. For achieving desired design specifications, the LNA is optimized by particle swarm optimization (PSO). The PSO is successfully implemented for optimizing noise figure (NF) when satisfying all the design specifications such as gain, power dissipation, linearity and stability. PSO algorithm is developed in MATLAB to optimize the LNA parameters. The LNA with optimized parameters is simulated using Advanced Design System (ADS) Simulator. The LNA with optimized parameters produces 21.470 dB of voltage gain, 1.031 dB of noise figure at 1.02 mW power consumption with 1.2 V supply voltage. The comparison of designed LNA with and without PSO proves that the optimization improves the LNA results while satisfying all the design constraints.
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Shrestha, Bijaya. "Design of Low Noise Amplifier for 1.5 GHz." SCITECH Nepal 13, no. 1 (September 30, 2018): 40–47. http://dx.doi.org/10.3126/scitech.v13i1.23500.

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Low Noise Amplifier (LNA) is a front-end device of a radio frequency (RF) receiver used to increase the amplitude of an RF signal without much additional noise, thereby increasing the noise figure of the system. This paper presents design, simulation, and prototype of an LNA operating at 1.5 GHz for the bandwidth of 100 MHz. The circuit was simulated using Advanced Design System (ADS). The components used are Surface Mount Devices (SMDs); with transistor "Infineon BFP420" as a major component. Other components are resistors, capacitors, and inductors; inductors being superseded by microstrip lines. The circuit was fabricated on FR4 board. The measurements of several parameters of LNA were made using Vector Network Analyzer (VNA), Noise Figure Meter; and Spectrum Analyzer. The LNA has minimum gain of 15.4 dB and maximum noise figure of 1.33 dB. It is unconditionally stable from 50 MHz to 10 GHz. DC supply is 5V and the current consumption is 10 mA. This LNA offers Output-Third­Order-Intercept-Point (OJP3) of about 1 4 dBm.
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Uzzal, Mohammad Mohiuddin. "Design, simulation and optimization of a single stage Low Noise Amplifier (LNA) for very low power L- Band satellite handheld applications." AIUB Journal of Science and Engineering (AJSE) 17, no. 2 (July 31, 2018): 37–42. http://dx.doi.org/10.53799/ajse.v17i2.7.

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In first stage of each microwave receiver, there is a Low Noise Amplifier (LNA) stage, and this LNA plays an important role to determine the quality factor of the receiver. The design of a LNA requires the trade-off of many important parameters including gain, Noise Figure (NF), stability, power consumption, cost and design complexity. In this paper, we have designed and simulate a single stage stable LNA circuit having gain 11.78 dB and noise figure 1.86 dB using microwave BJT AT3103 with Agilent package Advance Design Systems (ADS). This LNA operates at center frequency of 2 GHZ and it can be used in L-Band satellite modem for tracking applications.
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Xiang, Yong, Yan Bin Luo, Ren Jie Zhou, and Cheng Yan Ma. "A Low Noise Amplifier with 1.1dB Noise Figure and +17dBm OIP3 for GPS RF Receivers." Applied Mechanics and Materials 336-338 (July 2013): 1490–95. http://dx.doi.org/10.4028/www.scientific.net/amm.336-338.1490.

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A 1.575GHz SiGe HBT(heterojunction bipolar transistor) low-noise-amplifier(LNA) optimized for Global Positioning System(GPS) L1-band applications was presented. The designed LNA employed a common-emitter topology with inductive emitter degeneration to simultaneously achieve low noise figure and input impedance matching. A resistor-bias-feed circuit with a feedback resistor was designed for the LNA input transistor to improve the gain compression and linearity performance. The LNA was fabricated in a commercial 0.18µm SiGe BiCMOS process. The LNA achieves a noise figure of 1.1dB, a power gain of 19dB, a input 1dB compression point(P1dB) of -13dBm and a output third-order intercept point(OIP3) of +17dBm at a current consumption of 3.6mA from a 2.8V supply.
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Manjula, S., M. Malleshwari, and M. Suganthy. "Design of Low Power UWB CMOS Low Noise Amplifier using Active Inductor for WLAN Receiver." International Journal of Engineering & Technology 7, no. 2.24 (April 25, 2018): 448. http://dx.doi.org/10.14419/ijet.v7i2.24.12132.

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This paper presents a low power Low Noise Amplifier (LNA) using 0.18µm CMOS technology for ultra wide band (UWB) applications. gm boosting common gate (CG) LNA is designed to improve the noise performance. For the reduction of on chip area, active inductor is employed at the input side of the designed LNA for input impedance matching. The proposed UWB LNA is designed using Advanced Design System (ADS) at UWB frequency of 3.1-10.6 GHz. Simulation results show that the gain of 10.74+ 0.01 dB, noise figure is 4.855 dB, input return loss <-13 dB and 12.5 mW power consumption.
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Muhamad, Maizan, Norhayati Soin, and Harikrishnan Ramiah. "Linearity improvement of differential CMOS low noise amplifier." Indonesian Journal of Electrical Engineering and Computer Science 14, no. 1 (April 1, 2019): 407. http://dx.doi.org/10.11591/ijeecs.v14.i1.pp407-412.

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<p>This paper presents the linearity improvement of differential CMOS low noise amplifier integrated circuit using 0.13um CMOS technology. In this study, inductively degenerated common source topology is adopted for wireless LAN application. The linearity of the single-ended LNA was improved by using differential structures with optimum biasing technique. This technique achieved better LNA and linearity performance compare with single-ended structure. Simulation was made by using the cadence spectre RF tool. Consuming 5.8mA current at 1.2V supply voltage, the designed LNA exhibits S<sub>21</sub> gain of 18.56 dB, noise figure (NF) of 1.85 dB, S<sub>11</sub> of −27.63 dB, S<sub>22</sub> of -34.33 dB, S<sub>12</sub> of −37.09 dB and IIP3 of -7.79 dBm.</p>
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Thirunavukkarasu, G., and G. Murugesan. "Design of Low Noise Amplifier for WLAN using pHEMT." International Journal of Engineering & Technology 9, no. 2 (March 6, 2020): 272. http://dx.doi.org/10.14419/ijet.v9i2.30051.

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The low power consumption devices are frequently focused in design and manufacturing wireless communication system. This paper gives a systematic design of a low noise amplifier for WLAN application aimed to obtain minimum noise figure. The simulation result shows that the noise figure is in the appreciable level (1.67 dB). The maximum gain is greater than 10 dB. These are the predominant requirements of an LNA. Also it posses good stability and the LNA design uses pHEMT for its appreciable noise performance.
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Malika Begum, N., and W. Yasmeen. "A 0.18um CMOS Low Noise Amplifier for 3-5ghz UWB Receivers." International Journal of Engineering & Technology 7, no. 3.6 (July 4, 2018): 84. http://dx.doi.org/10.14419/ijet.v7i3.6.14944.

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This paper presents an Ultra-Wideband (UWB) 3-5 GHz Low Noise Amplifier (LNA) employing Chebyshev filter. The LNA has been designed using Cadence 0.18um CMOS technology. Proposed LNA achieves a minimum noise figure of 2.2dB, power gain of 9dB.The power consumption is 6.3mW from 1.8V power supply.
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Garbaya, Amel, Mouna Kotti, Mourad Fakhfakh, and Esteban Tlelo-Cuautle. "Metamodelling Techniques for the Optimal Design of Low-Noise Amplifiers." Electronics 9, no. 5 (May 11, 2020): 787. http://dx.doi.org/10.3390/electronics9050787.

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In this article we deal with the optimal sizing of low-noise amplifiers (LNAs) using newly proposed metamodeling techniques. The main objective is to construct metamodels of main performances of the LNAs (namely, the third intercept point (IIP3), the scattering parameters (Sij), and the noise figure (NF)) and use them inside an optimization kernel for maximizing the circuits’ performances. The kriging surrogate modelling technique is used for constructing these models. The particle swarm optimization (PSO) technique is considered as the optimization metaheuristic. Two CMOS amplifiers are considered: a UMTS LNA and a multistandard LNA. Obtained results show that, at the considered working frequencies, the first LNA exhibits at 2.14 GHz a noise figure of 1.30 dB, an S21 of 16.01 dB, an S11 of −12.60 dB, and an IIP3 of 8.30 dBm. At 2 GHz, the second LNA has a noise figure of 1.24 dB, an S21 of 17.16 dB, an S11 of −13.74 dB, and an IIP3 of 4.30 dBm. Comparisons between results obtained using the constructed models and those of the simulation are presented to show the perfect agreement between them.
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Dissertations / Theses on the topic "Low Noise figure LNA"

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Cherukumudi, Dinesh. "Ultra-Low Noise and Highly Linear Two-Stage Low Noise Amplifier (LNA)." Thesis, Linköpings universitet, Elektroniska komponenter, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-71355.

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An ultra-low noise two-stage LNA design for cellular basestations using CMOS is proposed in this thesis work.  This thesis is divided into three parts. First, a literature survey which intends to bring an idea on the types of LNAs available and their respective outcomes in performances, thereby analyze how each design provides different results and is used for different applications. In the second part, technology comparison for 0.12µm, 0.18µm, and 0.25µm technologies transistors using the IBM foundry PDKs are made to analyze which device has the best noise performance. Finally, in the third phase bipolar and CMOS-based two-stage LNAs are designed using IBM 0.12µm technology node, decided from the technology comparison. In this thesis a two-stage architecture is used to obtain low noise figure, high linearity, high gain, and stability for the LNA. For the bipolar design, noise figure of 0.6dB, OIP3 of 40.3dBm and gain of 26.8dB were obtained. For the CMOS design, noise figure of 0.25dB, OIP3 of 46dBm and gain of 26dB were obtained. Thus, the purpose of this thesis is to analyze the LNA circuit in terms of design, performance, application and various other parameters. Both designs were able to fulfill the design goals of noise figure < 1 dB, OIP3 > 40 dBm, and gain >18 dB.
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Khan, Abbas. "Optimization through Co-Simulation of Antenna, Bandpass Filter and Low-Noise Amplifier at 6-9 GHz." Thesis, Linköpings universitet, Fysik och elektroteknik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-110575.

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Ultra-wide band (UWB) 6-9 GHz antenna, band pass filter and low-noise amplifier (LNA) optimization using co-simulation of the RF front-end. At higher frequencies, carefully conducted design methodologies are required for RF front-end parameter optimization, such as power gain and low noise figure with low power consumption.
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Pimentel, Henrique Luiz Andrade. "Projeto de um amplificador de baixo ruído em tecnologia CMOS 130nm para frequências de 50MHZ a 1GHz." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2012. http://hdl.handle.net/10183/67180.

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O presente trabalho tem por objetivo fornecer o embasamento teórico para o projeto de um amplificador de baixo ruído (LNA – Low Noise Amplifier) em tecnologia CMOS que opere em mais de uma faixa de frequência, de modo a permitir seu uso em receptores multibanda e de banda larga. A base teórica que este trabalho abrange desde a revisão bibliográfica do assunto em questão, passando pela análise dos modelos de transistores para alta-frequência, pelo estudo das especificações deste bloco e das métricas utilizadas em projetos de circuitos integrados de RF, bem como pela revisão de topologias clássicas existentes. Com os conhecimentos acima adquiridos, foi possível realizar o projeto de um LNA diferencial de banda larga utilizando tecnologia CMOS IBM 130nm, o qual pode ser aplicado ao padrão IEEE 802.22 para rádios cognitivos (CR). O projeto é baseado na técnica de cancelamento de ruído, sendo validado após apresentar efetiva redução de figura de ruído para banda de frequência desejada, com moderado consumo de potência e utilização moderada de área de silício, devido a solução sem o uso de indutores. O LNA banda larga opera em frequências de 50Mhz a 1GHz e apresenta uma figura de ruído abaixo de 4dB, em 90% da faixa, um ganho acima de 12dB, e perda de retorno na entrada e na saída maiores que 12dB. O IIP3 e a frequência de ocorrência de compressão a 1dB com a entrada em 580MHz estão acima de 0dBm e -10dBm respectivamente. Possui consumo de 46,5mWpara fonte de 1,5V e ocupa uma área ativa de apenas 0,28mm x 0,2mm.
This work presents the theoretical basis for the design of a low noise amplifier (LNA) in CMOS technology that operates in more than one frequency band, which enables its use in multi-band and wideband receivers. The theoretical basis that this work will address extends from the literature review on the subject, through the analysis of models of MOS transistors for high frequencies, study of specifications of this block and the metrics used in RF integrated circuit design, as well as the review of existing classical LNA topologies. Based on the knowledge acquired above, the design of a differential wideband LNA is developed using IBM 130nm RF CMOS process, which can be used in IEEE 802.22 Cognitive Radio (CR) applications. The design is based on the noise-canceling technique, with an indutctorless solution, showing that this technique effectively reduces the noise figure over the desired frequency range with moderate power consumption and a moderate utilization of silicon die area. The wideband LNA covers the frequency range from 50 MHz to 1 GHz, achieving a noise figure below 4dB in over 90% of the band of interest, a gain of 11dB to 12dB, and an input/output return loss higher than -12 dB. The input IIP3 and input P1dB at 580MHz are above 0dB and -10dB, respectively. It consumes 46.5mW from a 1.5V supply and occupies an active area of only 0.056mm2 (0.28mm x 0.2mm).
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Klegová, Hana. "Nízkošumové zesilovače pro pásmo 1-3 GHz." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-316424.

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This masters thesis deals with low noise amplifier design for frequency range 1 GHz - 3 GHz. There is a short theoretical introduction in the first part of the thesis. There are described parameters and properties of transistors and general two-ports. Description of the noise characteristics two-ports follows. The next capture contains design of two-stage amplifiers. One of them is with a microstrip filter between stages and the second one is with combline filter on input of the amplifier. The amplifiers and the microstrip filter were designed in program ANSOFT Designer. The design of combline filter was realised in program CST Microwave Studio. Both amplifiers ware made and their properties ware compared with simulations.
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Potěšil, Dušan. "Nízkošumový zesilovač pro pásmo S." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-217670.

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This work deals with design, simulation and realisation of a receiving systém of an S-band front end for satellite communication. The first part of the project is designed the low noise amplifier (LNA) with high associated gain. The basic point of the design is choice of the active device. In the present time are available the ultra low noise transistors based on the GaAs with high mobility electron. The two-stage LNA has been designed with Agilent ATF-55143. It is pseudomorphic HEMTs ,which work in an enhancement mode.These transistor do not require a negative bias voltage and have extremely good typical noise figure. The design includes an interdigital tuned band pass filter between stages. The second part of the project is search another way design circuit. There are designed two LNA with paralel coupled line filter. The first has been applied on a PTFE substrate Duroid 5880 with relative permitivity 2,2 and tg d = 0,009. The substrate FR-4 (r = 4.34) with the thickness 0.06” was used for the realization.
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Ganesan, Sivakumar. "Highly linear low noise amplifier." Texas A&M University, 2003. http://hdl.handle.net/1969.1/5928.

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The CDMA standard operating over the wireless environment along with various other wireless standards places stringent specifications on the RF Front end. Due to possible large interference signal tones at the receiver end along with the carrier, the Low Noise Amplifier (LNA) is expected to provide high linearity, thus preventing the intermodulation tones created by the interference signal from corrupting the carrier signal. The research focuses on designing a novel LNA which achieves high linearity without sacrificing any of its specifications of gain and Noise Figure (NF). The novel LNA proposed achieves high linearity by canceling the IM3 tones in the main transistor in both magnitude and phase using the IM3 tones generated by an auxiliary transistor. Extensive Volterra series analysis using the harmonic input method has been performed to prove the concept of third harmonic cancellation and a design methodology has been proposed. The LNA has been designed to operate at 900MHz in TSMC 0.35um CMOS technology. The LNA has been experimentally verified for its functionality. Linearity is usually measured in terms of IIP3 and the LNA has an IIP3 of +21dBm, with a gain of 11 dB, NF of 3.1 dB and power consumption of 22.5 mW.
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Mcculloch, Mark Anthony. "Enhancing the noise performance of low noise amplifiers : with applications for future cosmic microwave background observatories." Thesis, University of Manchester, 2014. https://www.research.manchester.ac.uk/portal/en/theses/enhancing-the-noise-performance-of-low-noise-amplifiers--with-applications-for-future-cosmic-microwave-background-observatories(cd1da9b9-af7f-4bd2-a797-766c02855ab9).html.

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Low Noise Amplifiers (LNAs) are one of the most important components found in some of the radio receivers used in radio astronomy. A good LNA should simultaneously possess both a gain in excess of 25\,dB and as low a noise contribution as possible. This is because the gain is used to suppress the noise contribution of the subsequent components but the noise generated by the LNA adds directly to the noise of the overall receiver. The work presented in this thesis aimed to further enhance the noise performance through a variety of techniques with the aim of applying these techniques to the study of the polarisation of the Cosmic Microwave Background. One particular technique investigated was to cool the LNAs beyond the standard 20\,K typically used in experiments to 2\,K. In doing so it was found that the noise performance increased by between 20 and 30\% depending on the amplifier. Another technique investigated involved uniting the two technologies (MICs and MMIC) used in LNA fabrication to lower the noise performance of the LNA. Such an LNA, known as a T+MMIC LNA was successfully developed and possessed an average noise temperature of 9.4\,K and a gain in excess of 40\,dB for a 27-33\,GHz bandwidth at 8\,K physical temperature. Potential ``in field'' applications for these technologies are discussed, and a design for a variant of the T+MMIC LNA that utilises both of these technologies is presented. This particular LNA with a predicted average noise temperature of 6.8\,K for a 26-36\,GHz bandwidth, would if fabricated successfully represent the lowest noise Ka-band LNA ever reported.
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yasami, saeed. "Design and Evaluation of an Ultra-Low PowerLow Noise Amplifier LNA." Thesis, Linköping University, Department of Electrical Engineering, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-50923.

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This master thesis deals with the study of ultra low power Low Noise Amplifier (LNA) for use inmedical implant device. Usually, low power consumption is required for a long battery lifetime andlonger operation. The target technology is 90nm CMOS process.First basic principle of LNA is discussed. Then based on a literature review of LNA design, theproposed LNA is presented in sub-threshold region which reduce power consumption through scalingthe supply voltage and through scaling current.The circuit implementation and simulations is presented to testify the performance of LNA .Besides thepower consumption simulated under the typical supply voltage (1V), it is also measured under someother low supply voltages (down to 0.5V) to investigate the minimum power consumption and theminimum noise figure. Evaluation results show that at a supply voltage of 1V the LNA performs a totalpower consumption of 20mW and a noise of 1dB. Proper performance is achieved with a current ofdown to 200uA and supply voltage of down to 0.45V, and a total power consumption of 200uW

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Aitha, Venkat Ramana, and Mohammad Kawsar Imam. "Low Noise Amplifier for radio telescope at 1 : 42 GHz." Thesis, Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE), 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-997.

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This is a part of the project “Radio telescope system” working at 1.42 GHz, which includes designing of patch antenna and LNA. The main objective of this thesis is to design a two stage low noise amplifier for a radio telescope system, working at the frequency 1.42 GHz. Finally our aim is to design a two stage LNA, match, connect and test together with patch antenna to reduce

the system complexity and signal loss.

The requirements to design a two stage low noise amplifier (LNA) were well studied, topics including RF basic theory, layout and fabrication of RF circuits. A number of tools are available to design and simulate low noise amplifiers but our simulation work was done using advanced design system (ADS 2004 A). The design process includes selection of a proper device, stability check of the device, biasing, designing of matching networks and layout of total design and fabrication. A lot of time has been

spent on designing of impedance matching network, fabrication and testing of the design circuits and finally a two stage low noise amplifier (LNA) was designed. After the fabrication work, the circuits were tested by the spectrum analyzer in between 9 KHz to 25 GHz frequency range. Finally the resulting noise figure 0.299 dB and gain 24.25 dB are obtained from the simulation.

While measuring the values from the fabricated circuit board, we found that bias point is not stable due to self oscillations in the amplifier stages at lower frequencies like 149 MHz for first stage and 355 MHz for second stage.

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Amoêdo, David Jorge Tiago. "A 1.2 V low noise amplifier with double feedback for high gain and low noise figure." Master's thesis, Faculdade de Ciências e Tecnologia, 2013. http://hdl.handle.net/10362/11040.

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Dissertação para obtenção do Grau de Mestre em Engenharia Eletrotécnica e de Computadores
In this thesis we present a balun low noise amplifier (LNA) in which the gain is boosted using a double feedback structure. The circuit is based in a Balun LNA with noise and distortion cancellation. The LNA is based in two basic stages: common-gate (CG) and common-source (CS). We propose to replace the resistors by active loads, which have two inputs that will be used to provide the feedback (in the CG and CS stages). This proposed methodology will boost the gain and reduce the NF (Noise Figure). Simulation results, with a 130 nm CMOS technology, show that the gain is 19.65 dB and the NF is less than 2.17 dB. The total power dissipation is only 5 mW (since no extra blocks are required), leading to an FOM (Figure of Merit) of 3.13 mW-1 from a nominal 1.2 supply.
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Book chapters on the topic "Low Noise figure LNA"

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Devi, Anandini, C. Lison Singh, and F. A. Talukdar. "A Low Noise Figure and High-Gain Inductive Source Degenerative LNA for Wireless Application." In Pervasive Computing: A Networking Perspective and Future Directions, 71–80. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-3462-7_7.

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Tayenjam, Sobhana, Venkata Vanukuru, and S. Kumaravel. "A Source Degenerated Cascode LNA with High Gain and Low Noise Figure Using Layout Optimized High Q Inductors." In Communications in Computer and Information Science, 255–68. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-5048-2_20.

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Pramod, K. B., H. V. Kumaraswamy, and K. B. Praveen. "The Design and Simulation of 0.5 dB Noise-Figure RF Narrowband LNA." In Lecture Notes in Electrical Engineering, 197–205. India: Springer India, 2013. http://dx.doi.org/10.1007/978-81-322-1524-0_26.

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bin Ain, Mohd Fadzil, Mohamad Faiz bin Mohamed Omar, Roslina bt. Hussin, Zainal Arifin bin Ahmad, Intan Sorfina Zainal Abidin, and Mohd Zaid bin Abdullah. "Characterization of Low Noise Amplifier (LNA) for mm-Wave Wireless Systems." In 10th International Conference on Robotics, Vision, Signal Processing and Power Applications, 351–56. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-6447-1_44.

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Bastos, Ivan, F. Querido, D. Amoêdo, Luis B. Oliveira, J. P. Oliveira, João Goes, and Manuel M. Silva. "A 1.2 V Low-Noise-Amplifier with Double Feedback for High Gain and Low Noise Figure." In IFIP Advances in Information and Communication Technology, 573–81. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-37291-9_62.

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Cox, Charles H., Edward I. Ackerman, and Gary E. Betts. "Microwave Photonic Links with Very Low (≈ 3 dB) Amplifierless Noise Figure." In Directions for the Next Generation of MMIC Devices and Systems, 245–53. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4899-1480-4_29.

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Yadav, Namrata, Mohd Javed Khan, Jyoti Singh, Abhishek Pandey, Manish Kumar, Vijay Nath, and L. K. Singh. "A 0.533 dB Noise Figure and 7 mW Narrowband Low Noise Amplifier for GPS Application." In Proceedings of the International Conference on Microelectronics, Computing & Communication Systems, 305–15. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-5565-2_27.

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Noh, Norlaili Mohd. "LNA Inventions." In Advances in Monolithic Microwave Integrated Circuits for Wireless Systems, 24–47. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60566-886-4.ch002.

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The main design goals of an LNA are to achieve low noise figure, high gain, good linearity and good matching and reverse isolation. The choice of the LNA topology is therefore very important to suit the design application. Five LNA topologies were studied, analyzed and compared in this chapter. The topologies are the Simultaneous Noise and Input Matching (SNIM), Power-constrained Simultaneous Noise and Input Matching (PCSNIM), Current-reuse (CR) and Folded-cascode (FC) LNAs. The last topology is the PCSNIM with buffer. The circuits are analyzed in detail in terms of their functionality and compared based on the LNAs typical performance metrics. From the analysis, the PCSNIM technique can improve matching and noise performance of the inductively degenerated cascode. The current-reuse is found to consume less current but maintaining the circuit’s transconductance to achieve the desirable gain. The folded-cascode operates at lower voltage and hence is suitable for low-powered designs. Consequently, it is also resulting in the lowest noise-figure amongst the other designs.
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Yip, Ching Wen. "The Design and Modeling of 2.4 GHz and 3.5 GHz MMIC LNA." In Advances in Monolithic Microwave Integrated Circuits for Wireless Systems, 157–84. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60566-886-4.ch007.

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LNA is an electronic amplifier that is required in receiver systems to increase the amplitude of the very low level signals from the antenna without adding too much noise. Software Advance Design System (ADS) was used to simulate the circuit and design the layout. LNA was designed using cascode topology with feedback techniques which produces better matching and unconditionally stable over the entire desired frequencies. For the 2.4 GHz operation, the amplifier achieves gain of 14.949 dB, noise figure of 1.951 dB and input reflection coefficient of -10.419 dB. With operating voltage supply at 3V, the total current consumption is 13 mA. For 3.5GHz amplifier, gain is 22.985 dB, noise figure is 1.964dB, input reflection coefficient is -12.427 dB and current consumption is 18 mA.
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Mustaffa, Mohd Tafir. "Multi-Standard Multi-Band Reconfigurable LNA." In Advances in Monolithic Microwave Integrated Circuits for Wireless Systems, 1–23. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60566-886-4.ch001.

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In this research, the aim is to design and implement a new low noise amplifier (LNA) for a multi-standard mobile receiver based on reconfigurability concept. The LNA design is based on the inductively-degenerated common-source (IDCS) topology as it has been proven to be a good choice in designing multi-standard multi-band LNA. The design is using 0.18 µm CMOS technology. The reconfigurable LNA has been designed to operate in two bands of standards consisting the bands range from 800 to 1000-MHz (lower band) and 1800 to 2200-MHz (upper band). The simulation results exhibit gain S21 of 12.9-dB for lower band and 12.4-dB for upper band, input reflection S11 of -14.5-dB and -17.2-dB for both bands, and output return loss S22 of -14.7-dB and -26-dB for lower and upper band making the LNA suitable for most of the mobile communication applications. The LNA also exhibits the noise of figure of 2.55-dB and 2.3-dB for lower and upper band respectively. The circuit consumes 26.5 mW when operating in lower band mode and uses 18.8 mW of power when operating in upper band mode.
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Conference papers on the topic "Low Noise figure LNA"

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Zhang, Chi, Frank Zhang, Shafiullah Syed, Michael Otto, and Abdellatif Bellaouar. "A Low Noise Figure 28GHz LNA in 22nm FDSOI Technology." In 2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). IEEE, 2019. http://dx.doi.org/10.1109/rfic.2019.8701831.

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Sawayama, Yuito, Takayuki Morishita, Kiyotaka Komoku, and Nobuyuki Itoh. "Dual-Band Concurrent LNA with Low Gain Deviation and Low Noise Figure." In 2020 IEEE Asia-Pacific Microwave Conference (APMC 2020). IEEE, 2020. http://dx.doi.org/10.1109/apmc47863.2020.9331392.

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Kruger, Paulus, Barend Visser, and David Prinsloo. "Fully integrated LNA & antenna for ultra-low noise figure receivers." In 2017 47th European Microwave Conference (EuMC). IEEE, 2017. http://dx.doi.org/10.23919/eumc.2017.8230798.

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Zhu, Yingbo, Said F. Al-Sarawi, and Michael Liebelt. "A design methodology for a very low noise figure common-source LNA." In Smart Materials, Nano-, and Micro-Smart Systems, edited by Said F. Al-Sarawi. SPIE, 2005. http://dx.doi.org/10.1117/12.580705.

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Pongot, K., J. S. Hamidon, A. Ahmad, M. K. Suaidi, A. H. Hamidon, A. R. Othman, and Z. Zakaria. "Design low noise figure phemt lna using inductive drain feedback for WIMAX application." In 5th Brunei International Conference on Engineering and Technology (BICET 2014). Institution of Engineering and Technology, 2014. http://dx.doi.org/10.1049/cp.2014.1118.

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Pusalkar, Malhar, Anurag Pandey, and Pravin Dwaramwar. "A 0.3–3.3GHz low power, low noise figure, high gain inductor-less wideband CMOS LNA." In 2016 International Conference on Advanced Communication Control and Computing Technologies (ICACCCT). IEEE, 2016. http://dx.doi.org/10.1109/icaccct.2016.7831629.

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Venkatesh Murthy, B. T., Nitish Kumar Singh, Rajdeep Jha, Nilesh Kumar, and Raj Kumar. "Ultra Low Noise Figure, Low Power Consumption Ku- Band LNA with High Gain for Space Application." In 2020 5th International Conference on Communication and Electronics Systems (ICCES). IEEE, 2020. http://dx.doi.org/10.1109/icces48766.2020.9137956.

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Abiri, Ebrahim, Mohammad Reza Salehi, and Mohammad Sadegh Mirzazadeh. "A 4–10.6 GHZ low power LNA with dual reactive feedback and very low noise figure." In 2012 20th Iranian Conference on Electrical Engineering (ICEE). IEEE, 2012. http://dx.doi.org/10.1109/iraniancee.2012.6292368.

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Dang, J., P. Sakalas, A. Noculak, M. Hinz, and B. Meinerzhagen. "A K-band high gain, low noise figure LNA using 0.13 μm logic CMOS technology." In 2015 10th European Microwave Integrated Circuits Conference (EuMIC). IEEE, 2015. http://dx.doi.org/10.1109/eumic.2015.7345083.

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Sahoolizadeh, Hossein, Abumoslem Jannesari, and Massoud Dousti. "A new pole-zero technique for reducing thermal noise to design a very low noise figure UWB LNA." In 2014 22nd Iranian Conference on Electrical Engineering (ICEE). IEEE, 2014. http://dx.doi.org/10.1109/iraniancee.2014.6999548.

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