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Relevant bibliographies by topics / Low temperature photoluminescence / Dissertations / Theses

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Dissertations / Theses on the topic 'Low temperature photoluminescence'

Author: Grafiati

Published: 6 September 2023

Last updated: 25 July 2025

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1

Penwell, David James Kruger Michael B. "Photoluminescence of CdTe:In under high pressure and low temperature." Diss., UMK access, 2004.

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Thesis (M.S.)--Dept. of Physics. University of Missouri--Kansas City, 2004.<br>"A thesis in physics." Typescript. Advisor: Michael B. Kruger. Vita. Title from "catalog record" of the print edition Description based on contents viewed Feb. 28, 2006. Includes bibliographical references (leaves 32-33 ). Online version of the print edition.

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2

Tsagli, Kelvin Xorla. "Temperature Dependence of Photoluminescence Spectra in Polystyrene." University of Akron / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=akron1625744248503334.

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3

Armstrong, Helen. "Variable-temperature photoluminescence emission instrumentation and measurements on low yield metals." Thesis, Durham University, 2010. http://etheses.dur.ac.uk/374/.

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Measurements of the photoluminescence emission spectra of 99.999 % purity gold, 99.9999 % purity copper, polycrystalline PbMo6S8 and single crystal YBCO were made for λex = 488 nm as a function of temperature (72 K < T < 300 K), time (t < 12 hours), excitation power (P < 120 mW) and position on the sample using a high sensitivity instrument which was designed, commissioned and calibrated for this study. We present the first measurements of the photoluminescence emission spectra of gold and copper as a function of temperature which show peak photoluminescence emission intensity increasing by ap

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4

Sullivan, Wayne. "A low temperature photoluminescence study of radiation induced defects in silicon carbide." Thesis, University of Bristol, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.435732.

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5

Banishev, A. A., A. A. Lotin, and A. F. Banishev. "Deformation Stimulated Luminescence of Nano-micro-parcticles SrAl2O4:(Eu2+, Dy3+) in a Matrix of Photopolymer and Creation of Sensor Elements of Mechanical Stresses." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35389.

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The work deals with low-temperature photoluminescence and deformation luminescence (mechanolu-minescence) of a composite material based on fine disperse powder of phosphor SrAl2O4:(Eu2+, Dy3+) and photopolymerizing resin that is transparent in the visible region. It has been shown that at the low tem-perature (T=15÷200 K) the photoluminescence spectrum of SrAl2O4:(Eu2+, Dy3+) displays two wide, partial-ly overlapping bands with the maxima at λ1max517 nm and λ2max446 nm. The short-wave luminescence band (λ2max446 nm) has been found to undergo temperature quenching and to completely decay at T20

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6

Lama, Lars, and Axel Nordström. "Photoluminescence and AFM characterization of silicon nanocrystals prepared by low-temperature plasma enhanced chemical vapour depositon and annealing." Thesis, KTH, Fysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-103001.

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When studying quantum dots one of the most important properties is the size of the band gap, and thus also their physical dimensions. We investigated these properties for silicon quantum dots created by means of plasma-enhanced chemical vapour deposition and annealing. To determine the band gap size we measured photoluminescence for ten dierent samples and to determine the physical dimensions we used an atomic force microscope. The photoluminescence measurements indicated that the intensity of the emitted photons varied across the samples, but did not indicate any shift in peak wavelength betw

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7

Vijarnwannaluk, Sathon. "Optical studies of GaAs:C grown at low temperature and of localized vibrations in normal GaAs:C." Diss., Virginia Tech, 2002. http://hdl.handle.net/10919/27491.

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Optical studies of heavily-doped GaAs:C grown at low temperature by molecular beam epitaxy were performed using room-temperature photoluminescence, infrared transmission, and Raman scattering measurements. The photoluminescence experiments show that in LT-GaAs:C films grown at temperatures below 400 °C, nonradiative recombination processes dominate and photoluminescence is quenched. When the growth temperature exceeds 400 °C, band-to-band photoluminescence emission appears. We conclude that the films change in character from LT-GaAs:C to normal GaAs:C once the growth temperature reaches 400 °C

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8

Moroni, Didier. "Etude des proprietes optiques de semi-conducteurs composes iii-v et de puits quantiques par photoluminescence et excitation de la photoluminescence." Paris 6, 1987. http://www.theses.fr/1987PA066540.

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Identification des types de recombinaison entre 2 et 300k dans les couches epaisses de gainas et gainp epitaxiees sur leur support respectif inp et gaas. Etude de l'origine de la luminescence et variation en fonction de l'epaisseur du taux de capture des porteurs de la barriere dans les puits quantiques ingaas/inp. Determination du coefficient d'interdiffusion de al et ga aux interfaces dans les puits quantiques gaas/gaalas

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9

Syed, Abdul Samad. "Growth and Characterization of ZnO Nanostructures." Thesis, Linköpings universitet, Institutionen för fysik, kemi och biologi, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-72956.

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A close relation between structural and optical properties of any semiconductor material does exist. An adequate knowledge and understanding of this relationship is necessary for fabrication of devices with desired optical properties. The structural quality and hence the optical properties can be influenced by the growth method and the substrate used. The aim of this work was to investigate the change in optical properties caused by growth techniques and substrate modification. To study the influence of growth technique on optical properties, ZnO nanostructures were grown using atmospheric pre

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10

Zoulis, Georgios. "Structural and optical characterization of SiC." Thesis, Montpellier 2, 2011. http://www.theses.fr/2011MON20015/document.

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Ce travail porte sur la caractérisation structurale et optique d'échantillons de SiC. Les échantillons étudiés ont été répartis en trois groupes : des échantillons massifs, des couches épitaxiales épaisses et enfin des couches minces. La croissance des échantillons massifs a été réalisée avec la technique CF-PVT, utilisant une géométrie « d'étranglement ». L'objectif était de filtrer les défauts afin de créer des germes de 3C de haute pureté. La croissance de des couches épaisses par sublimation avait comme objectif la maitrise d'un dopage résiduel faible de type n et p pour des applications c

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11

Mohammed, Abdullahi. "Optical and structural characterisation of low dimensional structures using electron beam excitation systems." Thesis, University of Strathclyde, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.367049.

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12

Boudoukha, Abdelhamid. "Spectroscopie des accepteurs du groupe V dans CdTe." Grenoble 2 : ANRT, 1986. http://catalogue.bnf.fr/ark:/12148/cb375962916.

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13

Valloggia, Sylvie. "SPECTROSCOPIE DE PHOTOLUMINESCENCE LOCALE DANS LES SEMICONDUCTEURS MASSIFS (Si, InP) ET LES PUITS QUANTIQUES (GaAs/GaAlAs)." Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb37619041b.

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14

Raddenzati, Aurélien. "Optimisation du transport électronique dans le silicium cristallin (c-Si) en présence de nanostructures." Electronic Thesis or Diss., Mulhouse, 2017. https://www.learning-center.uha.fr/.

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Une des limitations dans l'exploitation généralisée de l'énergie photonique principalement d'origine solaireest la limitation du rendement des cellules photovoltaiques (pv) qui ne peut être améliorée aujourd’hui au planindustriel, qu’en utilisant des matériaux chers, rares voire dangereux. Le matériau le plus abondant le moinstoxique à la fabrication et au recyclage, qui aujourd’hui est le moins cher et le mieux maîtriséindustriellement est le silicium, mais la part du spectre lumineux convertible en électricité reste incomplètece qui pour conséquence de limiter le rendement.L’introduction de

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15

Posavec, Tony. "An Investigation into the Fluorescence of Polymers." University of Akron / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=akron1499353221343727.

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16

Lama, Lara, and Axel Nordström. "Photoluminescense and AFM characterization of silicon nanocrystals prepared by low-temperature plasma enhanced chemical vapour deposition and annealing." Thesis, KTH, Teoretisk fysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-104057.

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When studying quantum dots one of the most important properties is the size of the band gap, and thus also their physical dimensions. We investigated these properties for silicon quantum dots created by means of plasma-enhanced chemical vapour deposition and annealing. To determine the band gap size we measured photoluminescence for ten dierent samples and to determine the physical dimensions we used an atomic force microscope. The photoluminescence measurements indicated that the intensity of the emitted photons varied across the samples, but did not indicate any shift in peak wavelength betw

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17

Cheng, Huai-Yu, and 鄭懷瑜. "Photoluminescence and Low-temperature Behavior of SiOx Nanostructures." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/03295033899215100850.

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碩士<br>國立清華大學<br>材料科學工程學系<br>91<br>During last few years much effort has been made on the research of nanostructures novel, especially Si-based luminescent nanostructures due to their optical properties. However, the luminescence mechanisms for most of these luminescent materials are not clear and definitive till now. The present work involves the fabrication of oxygen-containing Si nanoparticles (OCSNs) by a thermal evaporation technique and measurement of photoluminescence (PL). The possible mechanism responsible for the PL is discussed. The SiOx nanoparticles were prepared in a

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18

Wu, Chia-Hsin, and 吳家欣. "Study of Photoluminescence Spectra of the Low-Temperature Growth ZnO Thin Films." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/95138086554655888623.

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碩士<br>大葉大學<br>電機工程學系<br>101<br>The epitaxial growth ZnO films were deposited on Si substrates by rf magnetron sputtering with substrate temperature below 300 ℃. The growth of thin films was performed at a pressure of 40 mtorr Ar and O2 with a sputtering power of 100 W. The deposited samples were put into a quartz tube furnace to anneal with various atmospheric. The crystallinity and crystal direction of the ZnO films were investigated by the X-ray diffractometry. Scanning electron microscopy (SEM) was utilized to study the surface morphology of the ZnO ﬁlms. The photoluminescence (PL) spectra

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19

Chen, Hsin-Fong, and 陳鑫封. "Determination of trace impurity concentration in semiconductor by low-temperature photoluminescence measurements." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/21644261481575928361.

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碩士<br>國立交通大學<br>電子物理系所<br>101<br>The species and concentration of trace III-V impurity in silicon wafers are determined by photoluminescence (PL). At low temperature and low excitation conditions, the emission of free exciton (FE) and impurity-bound exciton (BE) could be clearly observed. In particularly, the intensity ratio between BE and FE increases with increasing impurity concentration, having a correlation close to linear dependence. The intensity ratio for impurity concentration between 1011~1014 cm-3 have been measured using calibration samples, by which the impurity species and concen

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20

Young-Joon, Han. "Micron-scale characterization of laser processed silicon via low temperature micro-photoluminescence spectroscopy." Phd thesis, 2018. http://hdl.handle.net/1885/156455.

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Laser processing is now regarded as a promising tool to reduce the cost and complexity of fabricating the formation of localized contacts between heavily doped silicon and metal, features which have become an important element in high efficiency silicon solar cells, such as a passivated emitter and rear cell (PERC) and an interdigitated back contact cell (IBC). However, characterization of localized features with conventional PV characterization tools is challenging, mainly due to the limitations of spatial resolution. This thesis develops and applies no

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21

Das, Sarthak. "Tailoring excitonic complexes in layered materials." Thesis, 2021. https://etd.iisc.ac.in/handle/2005/5747.

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Layered transition metal dichalcogenides (TMDCs) host a variety of strongly bound exciton complexes that control the optical properties in these materials. Apart from spin and valley, layer index provides an additional degree of freedom in a few-layer-thick lm. While in the 1H monolayer TMD inversion symmetry is broken, and the reflection symmetry is maintained but, in the bilayer, it is reversed. Trions are excitonic species with a positive or negative charge, and thus, unlike neutral excitons, the flow of trions can generate a net detectable charge current. Trions under favourable d

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