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Journal articles on the topic 'Low temperature photoluminescence'

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1

Lacroix, Y., C. A. Tran, S. P. Watkins, and M. L. W. Thewalt. "Low‐temperature photoluminescence of epitaxial InAs." Journal of Applied Physics 80, no. 11 (1996): 6416–24. http://dx.doi.org/10.1063/1.363660.

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2

Kini, R. N., A. Mascarenhas, R. France, and A. J. Ptak. "Low temperature photoluminescence from dilute bismides." Journal of Applied Physics 104, no. 11 (2008): 113534. http://dx.doi.org/10.1063/1.3041479.

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3

Misiewicz, J. "The low temperature photoluminescence in Zn3P2." Physica Status Solidi (a) 107, no. 1 (1988): K65—K68. http://dx.doi.org/10.1002/pssa.2211070161.

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4

Liu, Yichun, and Yanhong Tong. "Growth and Optical Properties of ZnO Low-Dimensional Nanostructures." Journal of Nanoscience and Nanotechnology 8, no. 3 (2008): 1101–9. http://dx.doi.org/10.1166/jnn.2008.18158.

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Recent studies on the growth of ZnO nanostructures and their optical properties were reviewed. Using different methods, a variety of ZnO nanostructures, including quantum dots nanotowers, nanotubes, nanorods, nanowires, and nanosheets, displaying zero, one, and two dimensions, have been synthesized. The growth of ZnO low-dimensional nanostructures has been demonstrated. Their optical properties have been studied by means of room-temperature photoluminescence spectra, low-temperature photoluminescence spectra, temperature-dependent photoluminescence spectra, and pressure-dependent photoluminesc
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5

Kim, Soo-Yong. "A Study on Phosphor Synthetic and Low Temperature Photoluminescence Spectrum." Journal of the Korean Institute of Illuminating and Electrical Installation Engineers 24, no. 4 (2010): 10–16. http://dx.doi.org/10.5207/jieie.2010.24.4.010.

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6

Kasai, Jun‐ichi, and Yoshifumi Katayama. "Low‐temperature micro‐photoluminescence using confocal microscopy." Review of Scientific Instruments 66, no. 7 (1995): 3738–43. http://dx.doi.org/10.1063/1.1145431.

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7

Pickin, William. "Low-temperature photoluminescence spectrum of amorphous semiconductors." Physical Review B 40, no. 17 (1989): 12030–33. http://dx.doi.org/10.1103/physrevb.40.12030.

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8

Kovalev, D., J. Diener, H. Heckler, et al. "Low-temperature photoluminescence upconversion in porous Si." Physical Review B 61, no. 23 (2000): 15841–47. http://dx.doi.org/10.1103/physrevb.61.15841.

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9

Churmanov, V. N., N. B. Gruzdev, V. I. Sokolov, V. A. Pustovarov, V. Yu Ivanov, and N. A. Mironova-Ulmane. "Low-temperature photoluminescence in NixMg1−xO nanocrystals." Low Temperature Physics 41, no. 3 (2015): 233–35. http://dx.doi.org/10.1063/1.4915911.

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10

Feng, W., F. Chen, Q. Huang, and J. M. Zhou. "Photoluminescence of low-temperature multiple quantum wells." Journal of Crystal Growth 175-176 (May 1997): 1173–77. http://dx.doi.org/10.1016/s0022-0248(96)01041-x.

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11

Lan, Y. C., X. L. Chen, Y. G. Cao, et al. "Low-temperature synthesis and photoluminescence of AlN." Journal of Crystal Growth 207, no. 3 (1999): 247–50. http://dx.doi.org/10.1016/s0022-0248(99)00448-0.

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12

Bezrodna, T., V. Melnyk, V. Vorobjev, and G. Puchkovska. "Low-temperature photoluminescence of 5CB liquid crystal." Journal of Luminescence 130, no. 7 (2010): 1134–41. http://dx.doi.org/10.1016/j.jlumin.2010.02.009.

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13

GASANLY, N. M. "Low-temperature photoluminescence in CuIn5S8 single crystals." Pramana 86, no. 6 (2016): 1383–90. http://dx.doi.org/10.1007/s12043-015-1181-7.

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14

Pal, S., A. Sarkar, P. Kumar, et al. "Low temperature photoluminescence from disordered granular ZnO." Journal of Luminescence 169 (January 2016): 326–33. http://dx.doi.org/10.1016/j.jlumin.2015.09.015.

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15

Cho, Hak Dong, Im Taek Yoon, Kwun Bum Chung, Deuk Young Kim, Tae Won Kang, and Sh U. Yuldashev. "Low-temperature photoluminescence of WO 3 nanoparticles." Journal of Luminescence 195 (March 2018): 344–47. http://dx.doi.org/10.1016/j.jlumin.2017.11.053.

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16

Bodnar’, I. V., and M. V. Yakushev. "Low-temperature photoluminescence in AgGaSe2 single crystals." Technical Physics 49, no. 3 (2004): 335–37. http://dx.doi.org/10.1134/1.1688420.

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17

Posavec, T., S. Nepal, and S. V. Dordevic. "Low Temperature Photoluminescence in Some Common Polymers." Materials Performance and Characterization 7, no. 1 (2018): 20170138. http://dx.doi.org/10.1520/mpc20170138.

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18

Andreev, B. A., N. A. Sobolev, Yu A. Nikolaev, D. I. Kuritsin, M. I. Makovijchuk, and E. O. Parshin. "Low-temperature photoluminescence in holmium-doped silicon." Semiconductors 33, no. 4 (1999): 407–9. http://dx.doi.org/10.1134/1.1187703.

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19

Tronc, P., B. Reid, H. Mani, et al. "Low Temperature Photoluminescence Spectra of Ga0.77In0.23As0.19SB0.81 Compounds." physica status solidi (b) 180, no. 2 (1993): K87—K91. http://dx.doi.org/10.1002/pssb.2221800240.

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20

Tian, Peng, Chong Qing Huang, Wen Hua Luo, and Jing Liu. "MOCVD Growth and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots." Advanced Materials Research 571 (September 2012): 265–68. http://dx.doi.org/10.4028/www.scientific.net/amr.571.265.

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InAs/GaAs quantum dots structures are grown by meta-organic chemical vapor deposition. The effects of growth temperatures on the structural and optical properties of quantum dots are investigated by the atomic force microscopy and photoluminescence. An areal density of 9.3×109cm2 and a strongly enhanced photoluminescence intensity are obtained at the temperature of 505°C, furthermore, the low and high growth temperature tend to form coalescent islands and decrease the intensity of photoluminescence spectra.
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21

Kitada, Nobuo, and Takayuki Ishida. "Polymeric one- and two-dimensional copper(i) iodide complexes showing photoluminescence tunable by azaaromatic ligands." CrystEngComm 16, no. 34 (2014): 8035–40. http://dx.doi.org/10.1039/c4ce01231c.

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Photoluminescent properties of four low-dimensional [(CuI)<sub>x</sub>L]<sub>n</sub> complexes were investigated in the solid state at ambient temperature. A photoluminescence quantum yield of 73% was recorded for [(CuI)<sub>2</sub>(46dmpm)]<sub>n</sub>.
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22

Sagara, Yoshimitsu, Tatsuya Muramatsu, and Nobuyuki Tamaoki. "A 1,6-Diphenylpyrene-Based, Photoluminescent Cyclophane Showing a Nematic Liquid-Crystalline Phase at Room Temperature." Crystals 9, no. 2 (2019): 92. http://dx.doi.org/10.3390/cryst9020092.

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Photoluminescent nematic liquid crystals have been an attractive research target for decades, because of their potential applications in optoelectrical devices. Integration of luminescent motifs into cyclic structures is a promising approach to induce low-ordered liquid-crystalline phases, even though relatively large and rigid luminophores are used as emitters. Here, we demonstrate a 1,6-diphenylpyrene-based, unsymmetric cyclophane showing a stable nematic phase at room temperature and exhibiting strong photoluminescence from the condensed state. The observed sky-blue photoluminescence was do
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23

Tifouti, I., B. Meriane, S. Rahmouni, N. Boukhenoufa, and H. Bendjeffal. "Investigation of Temperature-Dependent Photoluminescence Mechanisms in Porous Silicon Layer for Optoelectronic Devices." Acta Physica Polonica A 147, no. 6 (2025): 449. https://doi.org/10.12693/aphyspola.147.449.

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This study examines how the variation of temperature affects the photoluminescence properties of porous silicon, offering insights into surface, defects, and carrier dynamics interactions. Porous layers are obtained using an electrochemical method, revealing two notable photoluminescence emission peaks. The study suggests two different non-radiative recombination processes based on intensity changes with temperature. Surface conditions contribute to the thermal quenching of the photoluminescence at low temperatures (10–60 K), while non-radiative recombination is linked to the thermal escape of
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24

Hwang, Seongmi, Youngmin Choi, and Beyong-Hwan Ryu. "Low Temperature Synthesis of Colloidal CdSe Quantum Dots." Journal of Nanoscience and Nanotechnology 7, no. 11 (2007): 3780–83. http://dx.doi.org/10.1166/jnn.2007.026.

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In this study, the CdSe nanocrystals were prepared in phenyl ether and octyl amine to investigate the variations of their size, bandgap energy, and photoluminescence with growth time and temperature. The sizes of the CdSe nanocrystals were measured using High Resolution Transmission Electron Microscopy (HRTEM), and found to be nearly monodisperse for relatively low growth temperature, 130 °C. Their optic properties were characterized by photoluminescence measurements, which showed that the colors of the nanocrystals could be controlled. The bandgap energies of the nanocrystals were calculated
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25

Hwang, Seongmi, Youngmin Choi, and Beyong-Hwan Ryu. "Low Temperature Synthesis of Colloidal CdSe Quantum Dots." Journal of Nanoscience and Nanotechnology 7, no. 11 (2007): 3780–83. http://dx.doi.org/10.1166/jnn.2007.18071.

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In this study, the CdSe nanocrystals were prepared in phenyl ether and octyl amine to investigate the variations of their size, bandgap energy, and photoluminescence with growth time and temperature. The sizes of the CdSe nanocrystals were measured using High Resolution Transmission Electron Microscopy (HRTEM), and found to be nearly monodisperse for relatively low growth temperature, 130 °C. Their optic properties were characterized by photoluminescence measurements, which showed that the colors of the nanocrystals could be controlled. The bandgap energies of the nanocrystals were calculated
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26

Byrne, Daragh, Aidan Cowley, Nick Bennett, and Enda McGlynn. "The luminescent properties of CuAlO2." J. Mater. Chem. C 2, no. 37 (2014): 7859–68. http://dx.doi.org/10.1039/c4tc01311e.

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27

Hatayama, Tomoaki, Anne Henry, Hiroshi Yano, and Takashi Fuyuki. "Low-temperature photoluminescence of 8H-SiC homoepitaxial layer." Japanese Journal of Applied Physics 55, no. 2 (2016): 020303. http://dx.doi.org/10.7567/jjap.55.020303.

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28

Park, Jin Won, Dong Jae Lee, Dong Hwan Kim, and Yunsang Lee. "Low-temperature Photoluminescence for Polycrystalline SrZrO3 and SrHfO3." Journal of the Korean Physical Society 58, no. 2 (2011): 316–20. http://dx.doi.org/10.3938/jkps.58.316.

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29

James, R. B., X. J. Bao, T. E. Schlesinger, J. M. Markakis, A. Y. Cheng, and C. Ortale. "Low‐temperature photoluminescence studies of mercuric‐iodide photodetectors." Journal of Applied Physics 66, no. 6 (1989): 2578–84. http://dx.doi.org/10.1063/1.344222.

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30

Lee, Jaesun, and N. C. Giles. "Low‐temperature photoluminescence from bulk CdTe and Cd0.967Zn0.033Te." Journal of Applied Physics 78, no. 2 (1995): 1191–95. http://dx.doi.org/10.1063/1.360356.

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31

Abay, B., H. Efeoglu, Y. K. Yogurtçu, and M. Alieva. "Low-temperature visible photoluminescence spectra of Tl2GaInSe4layered crystals." Semiconductor Science and Technology 16, no. 9 (2001): 745–49. http://dx.doi.org/10.1088/0268-1242/16/9/302.

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32

Huang, Jia-Yao, Lin Shang, Shu-Fang Ma, et al. "Low temperature photoluminescence study of GaAs defect states." Chinese Physics B 29, no. 1 (2020): 010703. http://dx.doi.org/10.1088/1674-1056/ab5fb8.

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33

ZHU, DELIANG, QIANWANG CHEN, and YUHENG ZHANG. "STABLE PHOTOLUMINESCENCE IN LOW-TEMPERATURE ANNEALED POROUS SILICON." Modern Physics Letters B 15, no. 24 (2001): 1077–85. http://dx.doi.org/10.1142/s0217984901002920.

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The low-temperature annealing of porous silicon (PS) has been studied in ambient air and vacuum. After air-annealed samples were again stored in air for a period of time, their luminescence exhibited improved stability in comparison to fresh samples. But their luminescence intensity is much weaker than that of fresh samples, and their peak position moves to shorter wavelengths. A stoichiometric oxide SiO2 can easily be formed on PS surfaces if the annealing is performed in vacuum. The SiO2 layer prevents nc-Si from further oxidation and guarantees the luminescence intensity and that peak posit
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34

Gasanly, N. M., and A. Aydinli. "Low-temperature photoluminescence spectra of InS single crystals." Solid State Communications 101, no. 11 (1997): 797–99. http://dx.doi.org/10.1016/s0038-1098(96)00704-1.

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35

Kim, Seong‐Il, Moo‐Sung Kim, Yong Kim, Kyung Sook Eom, Suk‐Ki Min, and Choochon Lee. "Low temperature photoluminescence characteristics of carbon doped GaAs." Journal of Applied Physics 73, no. 9 (1993): 4703–5. http://dx.doi.org/10.1063/1.352740.

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36

Aydınlı, A., N. M. Gasanly, and K. Gökşen. "Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals." Materials Research Bulletin 36, no. 10 (2001): 1823–32. http://dx.doi.org/10.1016/s0025-5408(01)00635-3.

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37

Shinde, Aparna, Richa Gahlaut, and Shailaja Mahamuni. "Low-Temperature Photoluminescence Studies of CsPbBr3 Quantum Dots." Journal of Physical Chemistry C 121, no. 27 (2017): 14872–78. http://dx.doi.org/10.1021/acs.jpcc.7b02982.

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38

Hudait, M. K., P. Modak, K. S. R. K. Rao, and S. B. Krupanidhi. "Low temperature photoluminescence properties of Zn-doped GaAs." Materials Science and Engineering: B 57, no. 1 (1998): 62–70. http://dx.doi.org/10.1016/s0921-5107(98)00259-1.

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39

Gasanly, N. M., A. Aydinli, A. Bek, and I. Yilmaz. "Low-temperature photoluminescence spectra of layered semiconductor TlGaS2." Solid State Communications 105, no. 1 (1998): 21–24. http://dx.doi.org/10.1016/s0038-1098(97)10027-8.

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40

Nikitin, T., S. Kopyl, V. Ya Shur, Y. V. Kopelevich, and A. L. Kholkin. "Low-temperature photoluminescence in self-assembled diphenylalanine microtubes." Physics Letters A 380, no. 18-19 (2016): 1658–62. http://dx.doi.org/10.1016/j.physleta.2016.02.043.

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41

Kalem, S., T. Curtis, W. B. de Boer, and G. E. Stillman. "Low-temperature photoluminescence in SiGe single quantum wells." Applied Physics A: Materials Science & Processing 66, no. 1 (1998): 23–28. http://dx.doi.org/10.1007/s003390050632.

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42

Gasanly, N. M. "Low-temperature photoluminescence in layered structured TlGa0.5In0.5Se2 crystals." Journal of Alloys and Compounds 547 (January 2013): 33–36. http://dx.doi.org/10.1016/j.jallcom.2012.08.134.

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43

Pei, Haiyue, Yihan Lu, Limin Qi, Dongli Liu, Ding Zhao, and Min Qiu. "Low-temperature photoluminescence measurement with a micromachined Joule-Thomson cooler." IOP Conference Series: Materials Science and Engineering 1301, no. 1 (2024): 012150. http://dx.doi.org/10.1088/1757-899x/1301/1/012150.

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Abstract This study evaluates the effectiveness of micromachined Joule-Thomson (MJT) cooling for photoluminescence (PL) materials. Achieving low temperatures is crucial for enhancing PL performance in semiconductors. However, the commonly used liquid nitrogen (LN2) cryostats require frequent refills, hindering their long-term operation. The MJT cooler offers a potential solution by enabling integration with devices and longer operating time. To validate its effectiveness, this study conducted low-temperature PL measurements using a nitrogen MJT cooler. A MAPbI3 thin film was used as the charac
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44

Xia, Yijie, Shuaishuai Du, Pengju Huang, et al. "Temperature-Dependent Photoluminescence of Manganese Halide with Tetrahedron Structure in Anti-Perovskites." Nanomaterials 11, no. 12 (2021): 3310. http://dx.doi.org/10.3390/nano11123310.

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The temperature-dependent photoluminescence (PL) properties of an anti-perovskite [MnBr4]BrCs3 sample in the temperature range of 78–500 K are studied in the present work. This material exhibits unique performance which is different from a typical perovskite. Experiments showed that from room temperature to 78 K, the luminous intensity increased as the temperature decreased. From room temperature to 500 K, the photoluminescence intensity gradually decreased with increasing temperature. Experiments with varying temperatures repeatedly showed that the emission wavelength was very stable. Based o
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45

Tu, Ya Fang, and Qiu Ming Fu. "Low Temperature Synthesis and Characterization of Flower-Like ZnO Nanostructures." Advanced Materials Research 664 (February 2013): 605–8. http://dx.doi.org/10.4028/www.scientific.net/amr.664.605.

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Flower-like ZnO nanostructures have been synthesized via solution process using zinc nitrate and sodium hydroxide at very low temperature of 70 °C in 1h. The structure, morphology and optical properties of the product were characterized by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and photoluminescence. The flower-like ZnO nanostructures were composed of uniform nanorods, they were well crystallized with a hexagonal wurtzite structure, and showed a strong ultraviolet emission at 385 nm and a weak and broad yellow emission in the photoluminescence spectrum.
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46

Zinoviev, P. V., and V. N. Zoryansky. "Short notes: Photoluminescence of C60 fullerite intercalated with nitrogen molecules wide range of temperatures." Low Temperature Physics 48, no. 3 (2022): 268–70. http://dx.doi.org/10.1063/10.0009547.

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The optical properties of C60 single crystals, intercalated with nitrogen molecules, were investigated by the spectral-luminescence method in the temperature range 20–230 K. The saturation was carried out under a pressure of 30 atm at various temperatures from 200 to 550°C. For the C60 + N2 system, the presence of a temperature boundary of the adsorption crossover of about 420°C was established (transition from the diffusion mechanism of intercalation — physisorption, to chemical interaction — chemisorption). The temperature dependence of the integrated radiation intensity of a new nitrogen-co
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47

Qu, Liu, Rui Wan, Yanjie Zhao, and Yu Wang. "Study on Interfacial Effects on Thermal, Mechanical and Fluorescent Properties for SrTiO3-SrCeO3 Composites." Journal of Physics: Conference Series 2459, no. 1 (2023): 012009. http://dx.doi.org/10.1088/1742-6596/2459/1/012009.

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Abstract Combining different phases in composite materials introduces interfaces that control the microstructure as well as functional and structural properties. This work focused on designing thermodynamically compatible SrTiO3-SrCeO3 with low thermal conductivity and up-conversion photoluminescence. Using a one-pot solid-state reaction method, SrTiO3-SrCeO3 composites have been synthesized with high-temperature stability, low thermal conductivity, and ideal mechanical and photoluminescence properties. Due to the interfaces between cubic and orthorhombic structures that could enhance the phon
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48

Morales, A. Escobedo, R. Aceves, U. Pal, and J. Z. Zhang. "Low Temperature Photoluminescence Characteristics of Chemically Synthesized Indium Doped Zinc Oxide Nanostructures." Journal of Nanoscience and Nanotechnology 8, no. 12 (2008): 6538–44. http://dx.doi.org/10.1166/jnn.2008.18422.

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Photoluminescence (PL) emission and excitation (EPL) spectra of un-doped and indium (1%) doped 1D zinc oxide nanostructures are studied at different temperatures. The nanostructures reveal a blue emission band attributed to localized donor states. Indium doping enhances the blue emission. While at low temperatures (&lt;50 K) PL spectra are dominated by the emission attributed to the recombination of excitons bound to neutral donors (D0,X), at higher temperatures (&gt;100 K), defect related emissions in the visible range dominate over the excitonic emission. Temperature dependence measurements
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49

Tanner, Peter A., and Lixin Yu. "Photoluminescence of ZnO:Eu3+ Nanoflowers." Journal of Nanoscience and Nanotechnology 8, no. 3 (2008): 1307–11. http://dx.doi.org/10.1166/jnn.2008.18187.

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The synthesis of ZnO:Eu3+ nanoflowers by a low-temperature hydrothermal route is described. Characterization of the materials was performed by ESEM, XRD and FTIR spectra. The 355 nm excited photoluminescence spectra at 10 K do not indicate the presence of Eu2+ or the ZnO defect states which give rise to green or red broadband emission. Excitation into the ZnO conduction band at low temperature does not give emission from Eu3+. Selective excitation of the Eu3+ emission shows that Eu3+ ions occupy a variety of different sites, of which one of them is similar to Eu3+ in C-type Eu2O3.
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50

Wang, Yingtao, and Xian Zhang. "Experimental and Theoretical Investigations of Direct and Indirect Band Gaps of WSe2." Micromachines 15, no. 6 (2024): 761. http://dx.doi.org/10.3390/mi15060761.

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Low-dimension materials such as transition metal dichalcogenides (TMDCs) have received extensive research interest and investigation for electronic and optoelectronic applications. Due to their unique widely tunable band structures, they are good candidates for next-generation optoelectronic devices. Particularly, their photoluminescence properties, which are fundamental for optoelectronic applications, are highly sensitive to the nature of the band gap. Monolayer TMDCs in the room temperature range have presented a direct band gap behavior and bright photoluminescence. In this work, we invest
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