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1

Bernard, Janez, Andreja Benčan, Tadej Rojac, Janez Holc, Barbara Malič, and Marija Kosec. "Low-Temperature Sintering of K0.5Na0.5NbO3Ceramics." Journal of the American Ceramic Society 91, no. 7 (July 2008): 2409–11. http://dx.doi.org/10.1111/j.1551-2916.2008.02447.x.

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2

Medesi, A., T. Greiner, M. Benkler, C. Megnin, and T. Hanemann. "Low Temperature Sintering of PZT." Journal of Physics: Conference Series 557 (November 27, 2014): 012132. http://dx.doi.org/10.1088/1742-6596/557/1/012132.

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3

Balakrishna, P., B. P. Varma, T. S. Krishnan, T. R. R. Mohan, and P. Ramakrishnan. "Low-temperature sintering of thoria." Journal of Materials Science Letters 7, no. 6 (June 1988): 657–60. http://dx.doi.org/10.1007/bf01730326.

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4

Zajc, I., and M. Drofenik. "Semiconducting BaTiO3 ceramic prepared by low temperature liquid phase sintering." Journal of Materials Research 13, no. 3 (March 1998): 660–64. http://dx.doi.org/10.1557/jmr.1998.0082.

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Donor-doped BaTiO3 ceramics were prepared by adding PbO B2O3 SiO2 as a sintering aid. Semiconducting BaTiO3 was obtained at a sintering temperature of 1100 °C. The sintered samples exhibit the Positive Temperature Coefficient of Resistivity (PTCR) effect, which depends on the amount of liquid phase, the concentration of the donor-dopant, and the sintering temperature. The cold resistivity of the samples decreases when the sintering temperature increases. The increase of the grain boundary resistivity and hence of the cold resistivity at lower sintering temperatures was explained by applying the diffusion grain boundary layer model.
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5

Watari, Koji, Hae J. Hwang, Motohiro Toriyama, and Shuzo Kanzaki. "Effective Sintering Aids for Low-temperature Sintering of AlN Ceramics." Journal of Materials Research 14, no. 4 (April 1999): 1409–17. http://dx.doi.org/10.1557/jmr.1999.0191.

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A disappearing sintering aid was used to promote densification during the initial and middle stages of sintering and to be removed in gaseous form from the specimens during the final stage of sintering. From thermodynamic consideration such as assessment of Gibbs free energy change of formation of Al2O3 compounds including metal-oxide and evaluation of the vapor pressure of metal-oxide, Li2O is expected to become a disappearing sintering aid for AlN sintering. Doping with Li2O resulted in densification of AlN ceramics with Y2O3 and CaO additives by sintering at a firing temperature of 1600 °C. The amount of Li2O in the specimens decreased by volatilization at temperatures higher than 1300 °C, and its amount was at a level of several ppm after firing at 1600 °C for 6 h. Low-temperature densification of AlN specimens by addition of Li2O also caused the improvement of thermal conductivity and mechanical strength of sintered specimens. Present results indicate that a Li2O addition is effective for AlN sintering. Furthermore, LiYO2 was also used as a new sintering aid instead of Li2O and Y2O3, and the results of thermal conductivity and mechanical strength are shown.
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6

Tomizawa, Jun, Tomoyuki Hasegawa, Yoshikazu Akiyama, and Takashi Hayashi. "Low-Temperature Sintering of PZT with a Sintering Aid." Key Engineering Materials 228-229 (September 2002): 207–10. http://dx.doi.org/10.4028/www.scientific.net/kem.228-229.207.

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7

Ramesh, T., S. R. Murthy, and R. S. Shinde. "Low Temperature Sintering of YIG Using Microwave Sintering Method." Integrated Ferroelectrics 118, no. 1 (November 12, 2010): 67–75. http://dx.doi.org/10.1080/10584587.2010.503786.

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8

Quercioli, Regis, Jerome Bernard, Jean-Marie Haussonne, Jean-Michel Reboul, and David Houivet. "Low sintering temperature of ZnNb2O6 for silver co-sintering." Ceramics International 40, no. 1 (January 2014): 1771–79. http://dx.doi.org/10.1016/j.ceramint.2013.07.077.

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9

Torii, Hideo, Satoru Yuhaku, and Hideyuki Okinaka. "Low-temperature sintering of zirconia ceramics." Journal of the Japan Society of Powder and Powder Metallurgy 33, no. 2 (1986): 98–102. http://dx.doi.org/10.2497/jjspm.33.98.

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10

YEH, TSUNG-SHOU, and MICHAEL D. SACKS. "Low-Temperature Sintering of Aluminum Oxide." Journal of the American Ceramic Society 71, no. 10 (October 1988): 841–44. http://dx.doi.org/10.1111/j.1151-2916.1988.tb07533.x.

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11

Longtu, Li, Zhang Xiaowen, and Chai Jinghe. "Low temperature sintering of PZT ceramics." Ferroelectrics 101, no. 1 (January 1990): 101–8. http://dx.doi.org/10.1080/00150199008016506.

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12

Valant, Matjaz, and Danilo Suvorov. "Low-Temperature Sintering of (Ba0.6Sr0.4)TiO3." Journal of the American Ceramic Society 87, no. 7 (July 2004): 1222–26. http://dx.doi.org/10.1111/j.1151-2916.2004.tb07716.x.

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13

Syh-Yuh Cheng, Shen-Li Fu, and Chung-Chuang Wei. "Low-temperature sintering of PZT ceramics." Ceramics International 13, no. 4 (January 1987): 223–31. http://dx.doi.org/10.1016/0272-8842(87)90066-6.

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14

Valant, Matjaz, Danilo Suvorov, Robert C. Pullar, Kumaravinothan Sarma, and Neil McN Alford. "A mechanism for low-temperature sintering." Journal of the European Ceramic Society 26, no. 13 (January 2006): 2777–83. http://dx.doi.org/10.1016/j.jeurceramsoc.2005.06.026.

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15

Hayashi, Takashi, Takayuki Inoue, Yoshikazu Nagashima, Jun Tomizawa, and Yoshikazu Akiyama. "Low-temperature sintering of PZT with LiBiO2as a sintering aid." Ferroelectrics 258, no. 1 (January 2001): 53–60. http://dx.doi.org/10.1080/00150190108008657.

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16

Li, J. L., F. Chen, and J. Y. Niu. "Low temperature sintering of Si3N4ceramics by spark plasma sintering technique." Advances in Applied Ceramics 110, no. 1 (January 2011): 20–24. http://dx.doi.org/10.1179/174367510x12753884125406.

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17

Kanamori, Kenji, Tohru Kineri, Ryohei Fukuda, Takafumi Kawano, and Keishi Nishio. "Low-temperature sintering of ZrW2O8–SiO2 by spark plasma sintering." Journal of Materials Science 44, no. 3 (February 2009): 855–60. http://dx.doi.org/10.1007/s10853-008-3128-6.

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18

Reis, Danieli A. P., D. S. Almeida, Maria do Carmo de Andrade Nono, Cosme Roberto Moreira Silva, and Francisco Piorino Neto. "Study of PSZ Sintered in Low Oxygen Partial Pressure." Materials Science Forum 498-499 (November 2005): 546–51. http://dx.doi.org/10.4028/www.scientific.net/msf.498-499.546.

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Thermomechanical and electrical properties of zirconia-based ceramics have led to a wide range of advanced and engineering ceramic applications like solid electrolyte in oxygen sensors, fuel cells and furnace elements and its low thermal conductivity has allowed its use for thermal barrier coatings for aerospace engine components. In this work, PSZ (partially stabilized zirconia) was studied to analyze the behavior during sintering in low oxygen partial pressure. Zirconia was partially stabilized with yttria 8 wt%. The sintering temperatures used were 1600, 1700, 1800 and 1900°C. The study of PSZ sintered in low oxygen partial pressure was done using Scanning Electron Microscope, X Ray Diffraction and density analysis. The values of samples density showed that the increasing in sintering temperature was favorable to the material densification. The monoclinic phase converted in tetragonal and cubic phases. The tetragonal phase maintains constant in all sintering temperatures, but the cubic phase increased at 1700 and 1800°C. The lattice parameters werecalculated and showed similar in all sintering temperature.
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19

Menapace, C., G. Cipolloni, and A. Molinari. "Influence of High Temperature Sintering on Impact Properties of Low Alloyed Steels." Materials Science Forum 802 (December 2014): 483–88. http://dx.doi.org/10.4028/www.scientific.net/msf.802.483.

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High temperature sintering, i.e. at temperatures above 1150°C is a well-known concept in industry. For example in the metal injection molding (MIM) process sintering temperatures employed are higher than 1250°C for ferrous alloys [1]. The advantages of this technology respect to conventional sintering are many: an increase in the homogeneity and in density, a better pores morphology, the elimination of some reducible oxides. All these lead to better mechanical properties and corrosion resistance which means better performance [2, 3, 4, 5].
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20

Zhou, Huanfu, Xiuli Chen, Liang Fang, Dongjin Chu, and Hong Wang. "A new low-loss microwave dielectric ceramic for low temperature cofired ceramic applications." Journal of Materials Research 25, no. 7 (July 2010): 1235–38. http://dx.doi.org/10.1557/jmr.2010.0160.

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A new low sintering temperature microwave dielectric ceramic, Li2ZnTi3O8, was investigated. X-ray diffraction data show that Li2ZnTi3O8 has a cubic structure [P4332(212)] with lattice parameters a = 8.37506 Å, V = 587.44 Å3, and Z = 4 when the sintering temperature is 1050 °C. The Li2ZnTi3O8 ceramic exhibits good microwave dielectric properties with εr about 26.2, Q×f value about 62,000 GHz, and τf about −15 ppm/°C. The addition of BaCu(B2O5) can effectively lower the sintering temperature from 1050 to 900 °C without degrading the microwave dielectric properties. Compatibility with Ag electrode indicates this material can be applied to low temperature cofired ceramic devices.
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21

Sebastian, Mailadil Thomas, Hong Wang, and Heli Jantunen. "Low temperature co-fired ceramics with ultra-low sintering temperature: A review." Current Opinion in Solid State and Materials Science 20, no. 3 (June 2016): 151–70. http://dx.doi.org/10.1016/j.cossms.2016.02.004.

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22

Jiang, Miao, Feng Hou, and Ting Xian Xu. "Properties of Silicon Nitride Using Cordierite as Sintering Additives." Key Engineering Materials 336-338 (April 2007): 313–15. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.313.

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Silicon nitride materials with low dielectric properties were prepared using nano and micron silicon nitride powders as raw materials and the green bodies were sintered with cordierite as sintering additive in flowing nitrogen. The additives of cordierite powders prepared by sol-gel method and solidstate reaction method could greatly decrease the sintering temperature. The dielectric constant of materials decreased as sintering temperature fell, whereas the strength showed relatively low as the low sintering temperature. XRD analysis showed the main phase of material was Si2N2O, which indicated that the Si3N4 could be integrated with SiO2. Porous structures were observed by SEM, showing compact sintering cannot be achieved at these temperatures, explaining the low strength.
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23

Lim, Chang-Bin, Dong-Hun Yeo, Hyo-Soon Shin, and Yong-Soo Cho. "Low Temperature Sintering Additives for Mullite Ceramics." Journal of the Korean Ceramic Society 48, no. 6 (November 30, 2011): 604–9. http://dx.doi.org/10.4191/kcers.2011.48.6.604.

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24

Fujita, Yuko, Tatsuya Matsunaga, Chiharu Kato, Takehiro Konoike, and Kunisaburo Tomono. "Low Temperature Sintering of Cu-substituted YIG." Journal of the Japan Society of Powder and Powder Metallurgy 49, no. 2 (2002): 95–99. http://dx.doi.org/10.2497/jjspm.49.95.

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25

Brookes, Ken. "Nano carbides make for low temperature sintering." Metal Powder Report 64, no. 9 (October 2009): 26–32. http://dx.doi.org/10.1016/s0026-0657(09)70217-6.

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26

Mittal, Jagjiwan, and Kwang-Lung Lin. "Exothermic low temperature sintering of Cu nanoparticles." Materials Characterization 109 (November 2015): 19–24. http://dx.doi.org/10.1016/j.matchar.2015.09.009.

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27

KIJIMA, Kazunori, Makoto KITAMURA, Shigeru AKIMOTO, Toru UETUKI, and Kaichiro TANAKA. "Sintering of SiC by Low Temperature Plasma." Journal of the Ceramic Society of Japan 98, no. 1134 (1990): 182–86. http://dx.doi.org/10.2109/jcersj.98.182.

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28

Kusumoto, Keiji, and Toyohiko Sugiyama. "Development of Low-Temperature Sintering Stoneware Bodies." IOP Conference Series: Materials Science and Engineering 18, no. 22 (September 16, 2011): 222030. http://dx.doi.org/10.1088/1757-899x/18/22/222030.

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29

Kwon, Seongtae, Edward M. Sabolsky, and Gary L. Messing. "Low-Temperature Reactive Sintering of 0.65PMN·0.35PT." Journal of the American Ceramic Society 84, no. 3 (March 2001): 648–50. http://dx.doi.org/10.1111/j.1151-2916.2001.tb00716.x.

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30

Jeon, Chang Jun, and Eung Soo Kim. "Low-temperature sintering of 0.85CaWO4–0.15LaNbO4 ceramics." Ceramics International 34, no. 4 (May 2008): 921–24. http://dx.doi.org/10.1016/j.ceramint.2007.09.058.

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31

Bellucci, Devis, Antonella Sola, and Valeria Cannillo. "Low Temperature Sintering of Innovative Bioactive Glasses." Journal of the American Ceramic Society 95, no. 4 (February 20, 2012): 1313–19. http://dx.doi.org/10.1111/j.1551-2916.2012.05100.x.

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32

Yang, H. B., Y. Lin, J. F. Zhu, and F. Wang. "Low temperature sintering of Y3Fe5O12with glass addition." Materials Technology 25, no. 5 (November 2010): 292–94. http://dx.doi.org/10.1179/175355510x12780624868871.

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33

Rahaman, Mohamed N., Lutgard C. De Jonghe, James A. Voigt, and Bruce A. Tuttle. "Low-temperature sintering of zinc oxide varistors." Journal of Materials Science 25, no. 1 (January 1990): 737–42. http://dx.doi.org/10.1007/bf00714102.

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34

Gao, Jiacheng, Xiaodong Yang, Rui Li, Yong Wang, and Fengwei Zhong. "Low-temperature sintering mechanism on uranium dioxide." Journal of Materials Science 42, no. 15 (May 13, 2007): 5936–40. http://dx.doi.org/10.1007/s10853-007-1774-8.

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35

Denry, Isabelle, and Julie A. Holloway. "Low temperature sintering of fluorapatite glass-ceramics." Dental Materials 30, no. 2 (February 2014): 112–21. http://dx.doi.org/10.1016/j.dental.2013.10.009.

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36

Ma, Siyuan, Vadim Bromberg, Liang Liu, Frank D. Egitto, Paul R. Chiarot, and Timothy J. Singler. "Low temperature plasma sintering of silver nanoparticles." Applied Surface Science 293 (February 2014): 207–15. http://dx.doi.org/10.1016/j.apsusc.2013.12.135.

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37

Zhao, Liyou, Dechang Jia, Xiaoming Duan, Zhihua Yang, and Yu Zhou. "Low temperature sintering of ZrC–SiC composite." Journal of Alloys and Compounds 509, no. 41 (October 2011): 9816–20. http://dx.doi.org/10.1016/j.jallcom.2011.08.041.

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38

Smirnov, V. V., and I. V. Sinitsa. "Corundum ceramics with a low sintering temperature." Refractories 35, no. 10 (October 1994): 322–24. http://dx.doi.org/10.1007/bf02226443.

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39

He, Ying, He Ping Zhou, and Han Feng Wang. "Synthesis of Cordierite Powders by Low Temperature Combustion Method." Key Engineering Materials 368-372 (February 2008): 192–94. http://dx.doi.org/10.4028/www.scientific.net/kem.368-372.192.

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The cordierite powders have been synthesized by low temperature combustion technique using urea as fuel, nitrates as oxidizer and silicic acid as silica source. The sintering behavior and crystallization process were investigated. The results showed that the powders could be sintered at a temperature lower than 1000 °C. The μ-cordierite crystallized from glass at first, and then transformed into α-cordierite at higher temperature. The obtained cordierite based glass ceramics at different temperatures have low dielectric constant (4.16 ~ 5.02 at 1 MHz) and low dielectric dissipation factor (≈ 0.003 at 1 MHz) as well as low temperature sintering behavior, which is compatible for electronic packaging.
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40

YAMAOKA, Yoshinori, Tetsuya SEIKE, Sohei SUKENAGA, Noritaka SAITO, and Kunihiko NAKASHIMA. "Low-Temperature Sintering of Silicon Nitride Ceramics Using Oxynitride Sintering Aid." Journal of MMIJ 128, no. 7 (2012): 487–91. http://dx.doi.org/10.2473/journalofmmij.128.487.

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41

Goswami, Sudipta, and A. Sen. "Low temperature sintering of CCTO using P2O5 as a sintering aid." Ceramics International 36, no. 5 (July 2010): 1629–31. http://dx.doi.org/10.1016/j.ceramint.2010.02.036.

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42

Vu, Hung, Dieu Nguyen, John G. Fisher, Won-Ha Moon, Seok Bae, Hee-Gyum Park, and Byong-Guk Park. "CuO-based sintering aids for low temperature sintering of BaFe12O19 ceramics." Journal of Asian Ceramic Societies 1, no. 2 (June 2013): 170–77. http://dx.doi.org/10.1016/j.jascer.2013.05.002.

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43

KALEMTAS, AYSE. "Low - Temperature Sintering of Porous Ceramics via Sodium Borate Addition." Material Science Research India 16, no. 1 (January 25, 2019): 48–55. http://dx.doi.org/10.13005/msri/160107.

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In the current study, sodium borate-bonded highly open porous ceramics successfully produced by starch consolidation technique. Open porous ceramic production was carried out by using an economical grade a-Si3N4, corn starch, CC31 commercial-grade kaolin, and borax decahydrate (Na2B4O7.10H2O). Borax decahydrate was used as a sintering aid in the system and total ceramic (a-Si3N4 + CC31): borax decahydrate ratio was kept constant at 5:1. Sintering studies of the shaped samples carried out in an air atmosphere at a relatively low sintering temperature, 1100°C, for one hour. Scanning electron microscopy investigations of the porous ceramic samples revealed that due to the high amount of borax based sintering additive a significant amount of liquid phase formed during the sintering process of the designed ceramics. Highly open porous(~66-74%) and lightweight(~0.64-0.83 g/cm3) ceramics were produced via starch consolidation technique and low-temperature sintering at atmospheric conditions.
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44

Puli, Venkata Sreenivas, Shiva Adireddy, Manish Kothakonda, Ravinder Elupula, and Douglas B. Chrisey. "Low temperature sintered giant dielectric permittivity CaCu3Ti4O12 sol-gel synthesized nanoparticle capacitors." Journal of Advanced Dielectrics 07, no. 03 (June 2017): 1750017. http://dx.doi.org/10.1142/s2010135x17500175.

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This paper reports on synthesis of polycrystalline complex perovskite CaCu3Ti4O[Formula: see text] (as CCTO) ceramic powders prepared by a sol–gel auto combustion method at different sintering temperatures and sintering times, respectively. The effect of sintering time on the structure, morphology, dielectric and electrical properties of CCTO ceramics is investigated. Tuning the electrical properties via different sintering times is demonstrated for ceramic samples. X-ray diffraction (XRD) studies confirm perovskite-like structure at room temperature. Abnormal grain growth is observed for ceramic samples. Giant dielectric permittivity was realized for CCTO ceramics. High dielectric permittivity was attributed to the internal barrier layer capacitance (IBLC) model associated with the Maxwell–Wagner (MW) polarization mechanism.
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45

Anjali, M. C., P. Biswas, D. Chakravarty, U. S. Hareesh, Y. S. Rao, and R. Johnson. "Low temperature in-situ reaction sintering of zircon: Alumina composites trough spark plasma sintering." Science of Sintering 44, no. 3 (2012): 323–30. http://dx.doi.org/10.2298/sos1203323a.

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Pure Zircon and Zircon: Alumina (ZrSiO4: ?-Al2O3) composite powders were subjected to densification studies employing spark plasma sintering (SPS). Physico chemical and microstructural properties of the samples were evaluated and compared with that of conventionally sintered (CRH-Constant Ramp and Hold) compacts. Density measurements and microstructural evaluation revealed a low temperature densification of Zircon: Alumina at temperatures as low as 1300?C by SPS. Increase of temperature to 1350?C had shown negligible changes in density and on further heating the sample melts at 1400?C as a result of excessive formation of liquid phase. However, pure zircon could not be densified in the absence of alumina under SPS conditions. It is evident that addition of alumina enhances partial low temperature decomposition of zircon under the influence of plasma generated during SPS. Mullite formed as a result of this insitu reaction between alumina and silica acts as a bonding phase as revealed by the X-ray diffraction (XRD), Scanning electron microscopy (SEM) and Electron disperse scanning (EDS) analysis.
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46

Yoo, Ju-Hyun, Hyun-Seok Lee, and Sang-Ho Lee. "Microstructure and Ferroelectric Properties of Low Temperature Sintering PMN-PNN-PZT Ceramics with Sintering Temperature." Journal of the Korean Institute of Electrical and Electronic Material Engineers 19, no. 12 (December 1, 2006): 1118–22. http://dx.doi.org/10.4313/jkem.2006.19.12.1118.

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47

Lee, Sea-Hoon, Byung-Nam Kim, and Hidehiko Tanaka. "Low temperature sintering of nano-SiC using a novel Al8B4C7 additive." Journal of Materials Research 25, no. 3 (March 2010): 471–75. http://dx.doi.org/10.1557/jmr.2010.0057.

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Al8B4C7 was used as a sintering additive for the densification of nano-SiC powder. The average grain size was approximately 70 nm after sintering SiC-12.5wt% Al8B4C7 at 1550 °C. The densification rate strongly depended on the sintering temperature and the applied pressure. The rearrangement of SiC particles occurred at the initial shrinkage, while viscous flow and liquid phase sintering became important at the middle and final stage of densification.
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48

Greve, Hannes, and F. Patrick McCluskey. "LT-TLPS Die Attach for High Temperature Electronic Packaging." Journal of Microelectronics and Electronic Packaging 11, no. 1 (January 1, 2014): 7–15. http://dx.doi.org/10.4071/imaps.394.

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Low temperature transient liquid phase sintering (LT-TLPS) can be used to form high-temperature joints between metallic interfaces at low process temperatures. In this paper, process analyses and shear strength studies of paste-based approaches to LT-TLPS are presented. The process progression studies include DSC analyses and observations of intermetallic compound (IMC) formation by cross-sectioning. It was found that the sintering process reaches completion after sintering times of 15 min for process temperatures approximately 50°C above the melting point of the low temperature constituent. For the shear studies, test samples consisting of copper dice and copper substrates joined by sintering with a variety of sinter pastes with different ratios of copper and tin have been assessed. A fixture was designed for high temperature enabled shear tests at 25°C, 125°C, 250°C, 400°C, and 600°C. The influence of the ratio of the amount of high melting-point constituent to the amount of low melting-point constituent on the maximum application temperature of the sinter paste was analyzed. Ag20Sn and Cu50Sn pastes showed no reduction in shear strength up to 400°C, and Cu40Sn pastes showed high shear strengths up to 600°C. It was shown that LT-TLPS can be used to form high temperature stable joints at low temperatures without the need to apply pressure during processing.
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49

Lu, Pengxian, Mankang Zhu, Dehe Xu, Wenjun Zou, Zhengxin Li, and Chunhua Wang. "Low-temperature sintering of PNW–PMN–PZT piezoelectric ceramics." Journal of Materials Research 22, no. 9 (September 2007): 2410–15. http://dx.doi.org/10.1557/jmr.2007.0322.

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For low-temperature firing of Pb0.94Sr0.06(Ni1/2W1/2)0.02(Mn1/3Nb2/3)0.07(Zr0.51Ti0.49)0.91O3 (PNW–PMN–PZT) system, BiFeO3 is selected as the sintering agent. In this study, the effects of BiFeO3 addition and sintering temperature on the microstructures and piezoelectric properties of the ceramics were investigated in detail. The ceramic with 10 mol% BiFeO3 sintered at 950 °C possesses optimal microstructure and piezoelectric properties. However, with the increase of sintering temperature the lower relative density, abnormal grain growth, and secondary phase accumulated at grain boundaries are observed, which deteriorates the piezoelectric properties. For the ceramics with different BiFeO3 addition sintered at 950 °C, the densification process and the grain growth are improved by suitable BiFeO3, while the morphotropic phase boundary (MPB) moving to the Ti-rich direction and the shrinkage of crystal cell occur. However, extra BiFeO3 inhabits the grain growth and introduces more cavities into the materials. Because of the microstructural changes that accompany the addition of BiFeO3 and the resulting decrease in sintering temperature, the maximum values of the piezoelectric properties are attained. By doping with 10 mol% BiFeO3, the sintering temperature of the PNW–PMN–PZT system can be lowered successfully from 1200 to 950 °C, while the excellent electric properties are kept.
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Lee, Hang-Won, Jeong-Hyun Park, Sahn Nahm, Dong-Wan Kim, and Jae-Gwan Park. "Low-temperature sintering of temperature-stable LaNbO4 microwave dielectric ceramics." Materials Research Bulletin 45, no. 1 (January 2010): 21–24. http://dx.doi.org/10.1016/j.materresbull.2009.09.008.

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