Relevant bibliographies by topics / Low-voltage scanning electron microscopy

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Low-voltage scanning electron microscopy'

Author: Grafiati
Published: 4 June 2021
Last updated: 8 February 2022

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Journal articles on the topic "Low-voltage scanning electron microscopy"

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Joy, David C., and Dale E. Newbury. "Low Voltage Scanning Electron Microscopy." Microscopy and Microanalysis 7, S2 (August 2001): 762–63. http://dx.doi.org/10.1017/s1431927600029883.

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Low Voltage Scanning Electron Microscopy (LVSEM), defined as operation in the energy range below 5keV, has become perhaps the most important single operational mode of the SEM. This is because the LVSEM offers advantages in the imaging of surfaces, in the observation of poorly conducting and insulating materials, and for high spatial resolution X-ray microanalysis. These benefits all occur because a reduction in the energy E0 of the incident beam leads to a rapid fall in the range R of the electrons since R ∼ k.E01.66. The reduction in the penetration of the beam has important consequences. Firstly, volume of the specimen that is sampled by the beam shrinks dramatically (varying as about E05 ) and so the information generated by the beam is confined to the surface of the sample. Secondly, the yield 8 of secondary electrons is increased from a typical value of 0.1 at 20keV to a value that may be in excess of 1.0 at 1keV.
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Joy, David C., and Dale E. Newbury. "Low Voltage Scanning Electron Microscopy." Microscopy Today 10, no. 2 (March 2002): 22–23. http://dx.doi.org/10.1017/s1551929500057813.

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Low Voltage Scanning Electron Microscopy (LVSEM), defined as operation in the energy range below 5 keV, has become perhaps the most important single operational mode of the SEM. This is because the LVSEM offers advantages in the imaging of surfaces, in the observation of poorly conducting and insulating materials, and for high spatial resolution X-ray microanalysis. These benefits all occur because a reduction in the energy Eo of the incident beam leads to a rapid fall in the range R of the electrons since R ∼k.E01.66. The reduction in the penetration of the beam has important consequences.
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Joy, David C., and Carolyn S. Joy. "Low voltage scanning electron microscopy." Micron 27, no. 3-4 (June 1996): 247–63. http://dx.doi.org/10.1016/0968-4328(96)00023-6.

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Schatten, G., J. Pawley, and H. Ris. "Integrated microscopy resource for biomedical research at the university of wisconsin at madison." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 594–97. http://dx.doi.org/10.1017/s0424820100127451.

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The High Voltage Electron Microscopy Laboratory [HVEM] at the University of Wisconsin-Madison, a National Institutes of Health Biomedical Research Technology Resource, has recently been renamed the Integrated Microscopy Resource for Biomedical Research [IMR]. This change is designed to highlight both our increasing abilities to provide sophisticated microscopes for biomedical investigators, and the expansion of our mission beyond furnishing access to a million-volt transmission electron microscope. This abstract will describe the current status of the IMR, some preliminary results, our upcoming plans, and the current procedures for applying for microscope time.The IMR has five principal facilities: 1.High Voltage Electron Microscopy2.Computer-Based Motion Analysis3.Low Voltage High-Resolution Scanning Electron Microscopy4.Tandem Scanning Reflected Light Microscopy5.Computer-Enhanced Video MicroscopyThe IMR houses an AEI-EM7 one million-volt transmission electron microscope.
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Joy, David C., and Carolyn S. Joy. "Ultra-low voltage scanning electron microscopy." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 144–45. http://dx.doi.org/10.1017/s0424820100163186.

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Although the benefits of operating the scanning electron microscope at low beam energies have been evident since the earliest days of the instrument, the successful utilization of the SEM under these conditions has required the development of high brightness field emission electron source, advanced lenses, and clean vacuums. As these technologies became available the level at which imaging became regarded as “low energy” has fallen from 10keV, first to 5keV, and more recently to 1keV. At this energy state of the art instruments can now provide an excellent balance between resolution – which becomes worse with decreasing energy – and desirable goals such as the minimization of sample charging and the reduction of macroscopic radiation damage – which tend to become more challenging as the energy is increased.An interesting new opportunity is to perform imaging in the ultra-low energy region between leV and 500eV. Over this energy range significant changes in the details of electron-solid interactions take place offering the chance of novel contrast modes, and the rapid fall in the electron beam range leads to the condition where the penetration of the incident beam into the sample is effectively limited to 1 or 2 nanometers. The practical problem is that of achieving useful levels of resolution and acceptable signal to noise ratios in the image. At energies below IkeV chromatic aberration dominates the probe formation in conventional instruments even when using an FEG source. However, the use of optimized retarding field optics essentially maintains chromatic aberration independent of landing energy down to very low values. Figure (1) shows an example of the performance that can be achieved on a commercial instrument – an Hitachi S-4500 – modified to operate in this mode, in this case at 50eV landing energy. The resolution of the image is judged from edge sharpness and detail to be significantly better than 0.1µm and, from experimental observation, this performance is apparently limited by residual astigmatism caused by uncorrected sample charging rather than by fundamental aberrations in the probe forming optics. Comparable, if somewhat lower resolution, images have been achieved on this, and other FEG SEMs, at energies as low as leV.
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Joy, David C., and Carolyn S. Joy. "Ultra-Low Voltage Scanning Electron Microscopy." Microscopy Today 4, no. 7 (September 1996): 12–13. http://dx.doi.org/10.1017/s1551929500060958.

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Although the benefits of operating the scanning electron microscope at low beam energies have been evident since the earliest days of the instrument, the successful utilization of the SEM under these conditions has required the development of high brightness field emission electron source, advanced lenses, and clean vacuums. As these technologies became available the level at which imaging became regarded as “low energy” has fallen from 10 keV, first to 5 keV, and more recently to 1 keV. At this energy state of the art, instruments can now provide an excellent balance between resolution - which becomes worse with decreasing energy - and desirable goals such as the minimization of sample charging and the reduction of macroscopic radiation damage - which tend to become more challenging as the energy is increased.
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Möller, Lars, Gudrun Holland, and Michael Laue. "Diagnostic Electron Microscopy of Viruses With Low-voltage Electron Microscopes." Journal of Histochemistry & Cytochemistry 68, no. 6 (May 21, 2020): 389–402. http://dx.doi.org/10.1369/0022155420929438.

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Diagnostic electron microscopy is a useful technique for the identification of viruses associated with human, animal, or plant diseases. The size of virus structures requires a high optical resolution (i.e., about 1 nm), which, for a long time, was only provided by transmission electron microscopes operated at 60 kV and above. During the last decade, low-voltage electron microscopy has been improved and potentially provides an alternative to the use of high-voltage electron microscopy for diagnostic electron microscopy of viruses. Therefore, we have compared the imaging capabilities of three low-voltage electron microscopes, a scanning electron microscope equipped with a scanning transmission detector and two low-voltage transmission electron microscopes, operated at 25 kV, with the imaging capabilities of a high-voltage transmission electron microscope using different viruses in samples prepared by negative staining and ultrathin sectioning. All of the microscopes provided sufficient optical resolution for a recognition of the viruses tested. In ultrathin sections, ultrastructural details of virus genesis could be revealed. Speed of imaging was fast enough to allow rapid screening of diagnostic samples at a reasonable throughput. In summary, the results suggest that low-voltage microscopes are a suitable alternative to high-voltage transmission electron microscopes for diagnostic electron microscopy of viruses.
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Jones, Arthur V. "Novel Approaches to Low-Voltage Scanning Electron Microscopy." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 1 (August 12, 1990): 366–67. http://dx.doi.org/10.1017/s0424820100180586.

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In comparison with the developers of other forms of instrumentation, scanning electron microscope manufacturers are among the most conservative of people. New concepts usually must wait many years before being exploited commercially. The field emission gun, developed by Albert Crewe and his coworkers in 1968 is only now becoming widely available in commercial instruments, while the innovative lens designs of Mulvey are still waiting to be commercially exploited. The associated electronics is still in general based on operating procedures which have changed little since the original microscopes of Oatley and his co-workers.The current interest in low-voltage scanning electron microscopy will, if sub-nanometer resolution is to be obtained in a useable instrument, lead to fundamental changes in the design of the electron optics. Perhaps this is an opportune time to consider other fundamental changes in scanning electron microscopy instrumentation.
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Vaz, O. W., and S. J. Krause. "Low-voltage Scanning Electron Microscopy of polymers." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 676–77. http://dx.doi.org/10.1017/s0424820100144772.

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Scanning electron microscopy (SEM) of polymers at routine operating voltages of 15 to 25 keV can lead to beam damage and sample image distortion due to charging. These problems may be avoided by imaging polymer samples at a “crossover point”, which is located at low accelerating voltages (0.1 to 2.0 keV), where the number of electrons impinging on the sample are equal to the number of outgoing electrons emerging from the sample. This condition permits the polymer surface to remain electrically neutral and prevents image distortion due to “charging” effects. In this research we have examined Teflon (polytetrafluorethylene) samples and studied the effects of accelerating voltage and sample tilting on charging phenomena. We have also determined the approximate position of the “crossover point”.
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Berry, V. K. "Low-Voltage Scanning Electron Microscopy in polymer characterization." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 468–69. http://dx.doi.org/10.1017/s0424820100127049.

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The application of low voltage scanning electron microscopy (LVSEM) to the characterization of polymers and non-conducting materials, other than semiconductors, has not been well explored yet. Some of the theoretical considerations and practical limitations which prevented the development of commercial instruments have mostly been addressed with the result that machines are now available which are optimized for low voltage (≥ 0.5 kV) operation. The advantages of working at low voltages are beginning to be recognized outside the semi-conductor industry. When we image uncoated polymer surfaces at low beam energies (0.5-1.5 kV), no beam damage or charging artifacts are experienced, because in this region the emitted electrons are equal to or more than the incident electrons and there is no deposition of charge underneath the surface due to the lower penetration of the incident electrons.
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Dissertations / Theses on the topic "Low-voltage scanning electron microscopy"

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Kawano, Kayoko. "Application of the ultra high resolution, low voltage scanning electron microscopy in the materials science." Thesis, University of Manchester, 2012. https://www.research.manchester.ac.uk/portal/en/theses/application-of-the-ultra-high-resolution-low-voltage-scanning-electron-microscopy-in-the-materials-science(341c7955-1da7-49be-9dd3-a3f3248bae05).html.

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The efficiency of low voltage scanning electron microscopy, which presents near-surface information, has been well known for a long time. However, it is not widely known that the high resolution capability can only be achieved when the surface reveals the original characteristics of the materials without any deterioration due contamination. Therefore, initial attention in this study is directed at clarifying the efficient use of the ultra high resolution, low voltage SEM (UHRLV SEM), (Ultra55, Zeiss). The SEM images and the selected electrons for detection, and damage that occurs through UHRVL SEM observation are also researched. Subsequently, the most efficient specimen preparation technique, which is appropriate for the characteristics of the individual materials, is investigated for galvanized steel, ultrasonically welded alloys of Al6111 and AZ31 alloy, Ti6Al4V alloy honeycomb structure and a ceramic sensor. The outcomes of appropriate specimen preparation technique and use of the extremely Low-Voltage below 2.0 kV, are presented in the results section. The study also presented the challenge of improving the low compositional contrast for the dissimilar materials of aluminium and magnesium, and to reduce charging effects in an insulating material comprising a ceramic sensor. As an application of the surface prepared by the process in this study, 3D tomography is also introduced.
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Zaggout, Fatima Nouh. "Quantification of SE dopant contrast in low voltage scanning electron microscope." Thesis, University of York, 2007. http://etheses.whiterose.ac.uk/11013/.

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Mieth, Oliver. "Low Voltage Electron Emission from Ferroelectric Materials." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-62190.

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Electron emission from ferroelectric materials is initiated by a variation of the spontaneous polarization. It is the main focus of this work to develop ferroelectric cathodes, which are characterized by a significantly decreased excitation voltage required to initiate the electron emission process. Particular attention is paid to the impact of the polarization on the emission process. Two materials are investigated. Firstly, relaxor ferroelectric lead magnesium niobate - lead titanate (PMN-PT) single crystals are chosen because of their low intrinsic coercive field. Electron emission current densities up to 5 · 10^(−5) A/cm² are achieved for excitation voltages of 160 V. A strong enhancement of the emission current is revealed for the onset of a complete polarization reversal. Secondly, lead zirconate titanate (PZT) thin films are investigated. A new method to prepare top electrodes with sub-micrometer sized, regularly patterned apertures is introduced and a stable electron emission signal is measured from these structures for switching voltages < 20 V. Furthermore, a detailed analysis of the polarization switching process in the PMN-PT samples is given, revealing a spatial rotation of the polarization vector into crystallographic easy axes, as well as the nucleation of reversed nano-domains. Both processes are initiated at field strengths well below the coercive field. The dynamics of the polarization reversal are correlated to the electron emission measurements, thus making it possible to optimize the efficiency of the investigated cathodes
Die Ursache für Elektronenemission aus ferroelektrischen Materialien ist eine Veränderung des Zustandes der spontanen Polarisation. Gegenstand der vorliegenden Arbeit ist eine Verringerung der dafür nötigen Anregungsspannung, wobei besonderes Augenmerk auf die Rolle der ferroelektrischen Polarisation innerhalb des Emissionsprozesses gelegt wird. Es werden zwei verschiedene Materialien untersucht. Das Relaxor-Ferroelektrikum Bleimagnesiumniobat - Bleititanat (PMN-PT) wurde aufgrund seines geringen Koerzitivfeldes ausgewählt. Es konnten Emissionsstromdichten von bis zu 5·10^(−5) A/cm² bei einer Anregungsspannung von 160 V erreicht werden. Bei Einsetzen eines vollständigen Umschaltens der Polarisation wurde eine deutliche Verstärkung des Emissionsstromes festgestellt. Desweiteren werden Untersuchungen an Bleizirkoniumtitanat (PZT) Dünnfilmen gezeigt. Eine neue Methode, eine Elektrode mit periodisch angeordneten Aperturen im Submikrometerbereich zu präparieren, wird vorgestellt. Diese Strukturen liefern ein stabiles Emissionssignal für Anregungsspannungen < 20 V. Eine detailierte Analyse des Schaltverhaltens der Polarisation der PMN-PT Proben zeigt sowohl eine Rotation des Polarisationsvektors als auch eine Nukleation umgeschaltener Nanodomänen. Beide Prozesse starten bei Feldstärken unterhalb des Koerzitivfeldes. Die ermittelte Zeitabhängigkeit des Schaltprozesses erlaubt Rückschlüsse auf den Emissionsprozess und erlaubt es, die Effizienz der untersuchten Kathoden weiter zu optimieren
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Heller, Eric. "Ultra low signals in ballistic electron emission microscopy." Columbus, Ohio : Ohio State University, 2003. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1060979803.

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Thesis (Ph. D.)--Ohio State University, 2003.
Title from first page of PDF file. Document formatted into pages; contains xvii, 237 p.; also includes graphics. Includes abstract and vita. Advisor: Jonathan P. Pelz, Dept. of Physics. Includes bibliographical references (p. 232-237).
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MacDonald, Kinsey Elizabeth. "Analysis of Frozen Desserts Using Low-Temperature Scanning Electron Microscopy (LT-SEM)." Thesis, Clemson University, 2019. http://pqdtopen.proquest.com/#viewpdf?dispub=10982077.

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Commercial vanilla ice cream and other frozen desserts from the United States were analyzed for ice crystal length using low-temperature scanning electron microscopy (LT-SEM). Average ice crystal length was determined using multiple micrographs of each sample/product. Out of the products tested, 11 out of 15 samples had an average ice crystal length above the consumer sensory threshold limit of 55 µm. Products containing stabilizers tended to have smaller average ice crystal lengths than products without stabilizers. With a few exceptions, lower fat products tended to have larger ice crystals because there was less fat to stabilize the ice crystals. Four brands of frozen dessert were studied in detail: a super-premium ice cream (Brand P), a regular ice cream (Brand R), a dietary high protein ice cream (Brand D), and a non-dairy coconut-based frozen dessert (Brand ND). All brands were purchased from two separate supermarket supply chains (Store I and Store P) and analyzed for ice crystal size, weight loss/shrinkage, melting rate, texture, and sensory characteristics before and after being heat-shocked (HS). Brand P, R, and ND all had mean ice crystal sizes that were not significantly different when purchased from either Store I and Store P. The mean ice crystal size increased after HS for all brands except Brand ND. Brand D and Brand P had the highest melting rates, while Brand ND had a much lower melting rate than the other brands tested. Brand ND had a slight decrease in the average ice crystal size and had a decrease in peak force/hardness after HS, while all other brands had an increase in average ice crystal size and an increase in peak force/hardness after HS. Significance was determined using α = 0.05 for all sensory data. The iciness attribute was found to be significantly affected by both brand and HS and an increase in ice crystal size corresponded with an increase in iciness for most samples. The use of stabilizers and emulsifiers in the brands affected various melting characteristics. Additional research is needed on non-dairy frozen desserts and how their physical and sensorial properties are affected by heat-shock.

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Long, Renhai. "In-situ Scanning Electron Microscopy for Electron-beam Lithography and In-situ One Dimensional Nano Materials Characterization." ScholarWorks@UNO, 2009. http://scholarworks.uno.edu/td/966.

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In this thesis, we demonstrate in-situ scanning electron microscopy techniques for both electron beam lithography (EBL) and in-situ one dimensional nano materials electrical characterization. A precise voltage contrast image positioning for in-situ EBL to integrate nanowires into suspended structures for nanoswitch fabrication has been developed. The in-situ EBL eliminates the stage movement error and field stitching error by preventing any movements of the stage during the nanolithography process; hence, a high precision laser stage and alignment marks on the substrate are not needed, which simplifies the traditional EBL process. The ZnO piezoelectronics is also studied using nano-manipulators in scanning electron microscope. Methods to improve the contact have been demonstrated and the contacts between probe tips and the nanowires are found to have significant impact on the measurement results.
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Hopkins, Diane Marie. "Low temperature scanning electron microscopy and X-ray microanalysis of human urothelial neoplasms." Thesis, Lancaster University, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.306296.

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Jones, Darrell E. "Spontaneous step creation on (001) silicon surfaces studied with scanning tunneling microscopy and low-energy electron microscopy /." The Ohio State University, 1997. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487946776020229.

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Karlsson, Linda. "Transmission Electron Microscopy of 2D Materials : Structure and Surface Properties." Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-127526.

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During recent years, new types of materials have been discovered with unique properties. One family of such materials are two-dimensional materials, which include graphene and MXene. These materials are stronger, more flexible, and have higher conductivity than other materials. As such they are highly interesting for new applications, e.g. specialized in vivo drug delivery systems, hydrogen storage, or as replacements of common materials in e.g. batteries, bulletproof clothing, and sensors. The list of potential applications is long for these new materials. As these materials are almost entirely made up of surfaces, their properties are strongly influenced by interaction between their surfaces, as well as with molecules or adatoms attached to the surfaces (surface groups). This interaction can change the materials and their properties, and it is therefore imperative to understand the underlying mechanisms. Surface groups on two-dimensional materials can be studied by Transmission Electron Microscopy (TEM), where high energy electrons are transmitted through a sample and the resulting image is recorded. However, the high energy needed to get enough resolution to observe single atoms damages the sample and limits the type of materials which can be analyzed. Lowering the electron energy decreases the damage, but the image resolution at such conditions is severely limited by inherent imperfections (aberrations) in the TEM. During the last years, new TEM models have been developed which employ a low acceleration voltage together with aberration correction, enabling imaging at the atomic scale without damaging the samples. These aberration-corrected TEMs are important tools in understanding the structure and chemistry of two-dimensional materials. In this thesis the two-dimensional materials graphene and Ti3C2Tx MXene have been investigated by low-voltage, aberration-corrected (scanning) TEM. High temperature annealing of graphene covered by residues from the synthesis is studied, as well as the structure and surface groups on single and double Ti3C2Tx MXene. These results are important contributions to the understanding of this class of materials and how their properties can be controlled.
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Skoupý, Radim. "Quantitative Imaging in Scanning Electron Microscope." Doctoral thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2020. http://www.nusl.cz/ntk/nusl-432610.

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Tato práce se zabývá možnostmi kvantitativního zobrazování ve skenovacím (transmisním) elektronovém mikroskopu (S|T|EM) společně s jejich korelativní aplikací. Práce začíná popisem metody kvantitativního STEM (qSTEM), kde lze stanovenou lokální tloušťku vzorku dát do spojitosti s ozářenou dávkou, a vytvořit tak studii úbytku hmoty. Tato metoda byla použita při studiu ultratenkých řezů zalévací epoxidové pryskyřice za různých podmínek (stáří, teplota, kontrastování, čištění pomocí plazmy, pokrytí uhlíkem, proud ve svazku). V rámci této části jsou diskutovány a demonstrovány možnosti kalibračního procesu detektoru, nezbytné pozadí Monte Carlo simulací elektronového rozptylu a dosažitelná přesnost metody. Metoda je pak rozšířena pro použití detektoru zpětně odražených elektronů (BSE), kde byla postulována, vyvinuta a testována nová kalibrační technika založená na odrazu primárního svazku na elektronovém zrcadle. Testovací vzorky byly různě tenké vrstvy v tloušťkách mezi 1 až 25 nm. Použití detektoru BSE přináší možnost měřit tloušťku nejen elektronově průhledných vzorků jako v případě qSTEM, ale také tenkých vrstev na substrátech - qBSE. Obě výše uvedené metody (qSTEM a qBSE) jsou založeny na intenzitě zaznamenaného obrazu, a to přináší komplikaci, protože vyžadují správnou kalibraci detektoru, kde jen malý posun úrovně základního signálu způsobí významnou změnu výsledků. Tato nedostatečnost byla překonána v případě qSTEM použitím nejpravděpodobnějšího úhlu rozptylu (zachyceného pixelovaným STEM detektorem), namísto integrální intenzity obrazu zachycené prstencovým segmentem detektoru STEM. Výhodou této metody je její použitelnost i na data, která nebyla předem zamýšlena pro využití qSTEM, protože pro aplikaci metody nejsou potřeba žádné zvláštní předchozí kroky. Nevýhodou je omezený rozsah detekovatelných tlouštěk vzorku způsobený absencí píku v závislosti signálu na úhlu rozptylu. Obecně platí, že oblast s malou tloušťkou je neměřitelná stejně tak jako tloušťka příliš silná (použitelný rozsah je pro latex 185 - 1 000 nm; rozsah je daný geometrií detekce a velikostí pixelů). Navíc jsou v práci prezentovány korelativní aplikace konvenčních a komerčně dostupných kvantitativních technik katodoluminiscence (CL) a rentgenové energiově disperzní spektroskopie (EDX) spolu s vysokorozlišovacími obrazy vytvořenými pomocí sekundárních a prošlých elektronů.
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Books on the topic "Low-voltage scanning electron microscopy"

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Schatten, Heide, and James B. Pawley, eds. Biological Low-Voltage Scanning Electron Microscopy. New York, NY: Springer New York, 2008. http://dx.doi.org/10.1007/978-0-387-72972-5.

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Image formation in low-voltage scanning electron microscopy. Bellingham, Wash: SPIE Optical Engineering Press, 1993.

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Bell, David C., and Natasha Erdman, eds. Low Voltage Electron Microscopy. Chichester, UK: John Wiley & Sons, Ltd, 2012. http://dx.doi.org/10.1002/9781118498514.

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(Editor), Heide Schatten, and James B. Pawley (Editor), eds. Biological Low-Voltage Scanning Electron Microscopy. Springer, 2007.

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Schatten, Heide, and James Pawley. Biological Low-Voltage Scanning Electron Microscopy. Springer, 2014.

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Reimer, Ludwig. Image Formation in Low-Voltage Scanning Electron Microscopy. SPIE, 1993. http://dx.doi.org/10.1117/3.2265074.

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Amerom, H. W. J. van. and Lagaaij Robert 1924-, eds. Sem atlas of type and figured material from Robert Lagaaij's "The pliocene bryozoa of the Low Countries", (1952). [s.l: s.n.], 1989.

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Erdman, Natasha. Low Voltage Electron Microscopy. Wiley, 2013.

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United States. National Aeronautics and Space Administration., ed. Fine collimator grids using silicon metering structure: Summary of research "final report" : grant no., NAGW-4144 ... period of performance, 3/1/95-3/1/98. Redondo Beach, CA: TRW Space & Electronics Group, 1998.

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Bell, David C., and Natasha Erdman. Low Voltage Electron Microscopy: Principles and Applications. Wiley & Sons, Incorporated, John, 2012.

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Book chapters on the topic "Low-voltage scanning electron microscopy"

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Brodusch, Nicolas, Hendrix Demers, and Raynald Gauvin. "Low Voltage SEM." In Field Emission Scanning Electron Microscopy, 37–46. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4433-5_4.

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Lyman, Charles E., Joseph I. Goldstein, Alton D. Romig, Patrick Echlin, David C. Joy, Dale E. Newbury, David B. Williams, et al. "Low-Voltage SEM." In Scanning Electron Microscopy, X-Ray Microanalysis, and Analytical Electron Microscopy, 57–60. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4613-0635-1_10.

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Lyman, Charles E., Joseph I. Goldstein, Alton D. Romig, Patrick Echlin, David C. Joy, Dale E. Newbury, David B. Williams, et al. "Low-Voltage SEM." In Scanning Electron Microscopy, X-Ray Microanalysis, and Analytical Electron Microscopy, 234–41. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4613-0635-1_39.

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Klie, Robert. "Low Voltage Scanning Transmission Electron Microscopy of Oxide Interfaces." In Low Voltage Electron Microscopy, 163–84. Chichester, UK: John Wiley & Sons, Ltd, 2012. http://dx.doi.org/10.1002/9781118498514.ch7.

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Brodusch, Nicolas, Hendrix Demers, and Raynald Gauvin. "Low Voltage STEM in the SEM." In Field Emission Scanning Electron Microscopy, 47–53. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4433-5_5.

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Osumi, Masako. "Low-Voltage Scanning Electron Microscopy in Yeast Cells." In Biological Field Emission Scanning Electron Microscopy, 363–84. Chichester, UK: John Wiley & Sons, Ltd, 2019. http://dx.doi.org/10.1002/9781118663233.ch16.

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Frey, M. David. "Low kV Scanning Electron Microscopy." In Scanning Microscopy for Nanotechnology, 101–19. New York, NY: Springer New York, 2006. http://dx.doi.org/10.1007/978-0-387-39620-0_4.

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Browning, Nigel D., Ilke Arslan, Rolf Erni, and Bryan W. Reed. "Low-Loss EELS in the STEM." In Scanning Transmission Electron Microscopy, 659–88. New York, NY: Springer New York, 2010. http://dx.doi.org/10.1007/978-1-4419-7200-2_16.

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Lyman, Charles E., Joseph I. Goldstein, Alton D. Romig, Patrick Echlin, David C. Joy, Dale E. Newbury, David B. Williams, et al. "Voltage Contrast and EBIC." In Scanning Electron Microscopy, X-Ray Microanalysis, and Analytical Electron Microscopy, 81–85. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4613-0635-1_15.

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Lyman, Charles E., Joseph I. Goldstein, Alton D. Romig, Patrick Echlin, David C. Joy, Dale E. Newbury, David B. Williams, et al. "Voltage Contrast and EBIC." In Scanning Electron Microscopy, X-Ray Microanalysis, and Analytical Electron Microscopy, 279–86. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4613-0635-1_44.

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Conference papers on the topic "Low-voltage scanning electron microscopy"

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Eastham, D. A., P. Edmondson, S. Donnelly, E. Olsson, K. Svensson, and A. Bleloch. "Construction of a new type of low-energy scanning electron microscope with atomic resolution." In SPIE Scanning Microscopy, edited by Michael T. Postek, Dale E. Newbury, S. Frank Platek, and David C. Joy. SPIE, 2009. http://dx.doi.org/10.1117/12.824180.

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Yedur, Sanjay K., and Bhanwar Singh. "Evaluation of atomic force microscopy: comparison with electrical CD metrology and low-voltage scanning electron microscopy." In Microlithography '99, edited by Bhanwar Singh. SPIE, 1999. http://dx.doi.org/10.1117/12.350853.

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Mikhailovskii, V., Yu Petrov, and O. Vyvenko. "Plasmon-enhanced electron scattering in nanostructured thin metal films revealed by low-voltage scanning electron microscopy." In MEDICAL PHYSICS: Fourteenth Mexican Symposium on Medical Physics. Author(s), 2016. http://dx.doi.org/10.1063/1.4954339.

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Zhou, Jianhua, and Li Shi. "Scanning Probe Microscopy of Carbon Nanotube Electronic Devices." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-62318.

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Electron transport and dissipation mechanisms in single-walled carbon nanotube electronic devices are intriguing. In the past, electrostatic force microscopy and scanning thermal microscopy methods have been employed to obtain respectively the voltage and temperature profiles in carbon nanotube electronic devices. The measurement results have suggested weak electron-acoustic phonon scattering at low bias and intense optical phonon emission at high bias. However, because the thermal probe was in direct contact with the nanotubes during thermal imaging, the probe could disturb charge transport. Further, it was difficult to quantify the thermal contact between the probe and the nanotube, making it difficult to quantify the actual temperature rise in the device. We have recently overcome these problems by coating the nanotube device with a 5–10 nm thick polystyrene film. The ultra-thin uniform coating can effectively protect the nanotube device during thermal imaging without reducing the signal level. It can potentially allow us to quantify the temperature rise of the nanotube devices by calibrating the thermal probe using a nanometer scale resistance thermometer covered by the same coating. Our recent results reveal diffusive and dissipative charge transport in a possibly double wall carbon nanotube with a semiconducting outer wall. We have also observed uniform heat dissipation in a metallic single-walled carbon nanotube at an applied bias above 0.2 V. Measurements on metallic and semiconducting single wall carbon nanotubes of different lengths are currently underway in order to improve our understanding of the transport and dissipation mechanisms in carbon nanotube electronics at low biases.
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Koniuch, Natalia. "Low Dose Scanning Transmission Electron Microscopy methods for the study of crystalline defects in pharmaceutical compounds." In European Microscopy Congress 2020. Royal Microscopical Society, 2021. http://dx.doi.org/10.22443/rms.emc2020.318.

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S'ari, Mark. "Low-dose Scanning Transmission Electron Microscopy Methods to Obtain High-Resolution Information of Pharmaceutical Organic Crystals." In European Microscopy Congress 2020. Royal Microscopical Society, 2021. http://dx.doi.org/10.22443/rms.emc2020.902.

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Lazar, A., and P. S. Fodor. "Sparsity based noise removal from low dose scanning electron microscopy images." In IS&T/SPIE Electronic Imaging, edited by Charles A. Bouman and Ken D. Sauer. SPIE, 2015. http://dx.doi.org/10.1117/12.2078438.

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Postek, Michael T., András E. Vladár, Dianne L. Poster, Atsushi Muto, and Takeshi Sunaoshi. "Ultra-low landing energy scanning electron microscopy for nanoengineering applications and metrology." In Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII, edited by Wounjhang Park, André-Jean Attias, and Balaji Panchapakesan. SPIE, 2020. http://dx.doi.org/10.1117/12.2567051.

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Maekawa, Takeshi, Hiroyuki Tanaka, and Masatoshi Kotera. "Collection field dependence of charging-up of insulators in low voltage scanning electron microscope." In 2007 Digest of papers Microprocesses and Nanotechnology. IEEE, 2007. http://dx.doi.org/10.1109/imnc.2007.4456111.

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Zhang, Chuan, Jochonia Nxumalo, and Esther P. Y. Chen. "Conductive-AFM for Inline Voltage Contrast Defect Characterization at Advanced Technology Nodes." In ISTFA 2018. ASM International, 2018. http://dx.doi.org/10.31399/asm.cp.istfa2018p0555.

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Abstract Voltage contrast (VC) mode inline E-beam inspection (EBI) at post contact layer provides electrical readout of critical yield signals at an early stage, which could be months before a wafer reaches functional test. Similar to the passive voltage contrast (PVC) technique that is widely used in failure analysis labs, inline VC scanning is based on scanning electron microscopy, where a low keV electron beam scans across the wafer. Conductive atomic force microscopy (CAFM) was successfully implemented as a characterization method for inline VC defects. In this paper, three challenging VC defect analysis case studies are considered: bright voltage contrast (BVC) gate to active short, BVC Junction leakage, and Dark Voltage Contrast gate contact open. Defects exhibiting a hard electrical short, junctional leakage, and open gate contact are used to illustrate how CAFM provides a powerful and comprehensive solution for in-depth characterization of the inline VC defects.
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Reports on the topic "Low-voltage scanning electron microscopy"

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Yoon, Hyungsuk Alexander. The structures and dynamics of atomic and molecular adsorbates on metal surfaces by scanning tunneling microscopy and low energy electron diffraction. Office of Scientific and Technical Information (OSTI), December 1996. http://dx.doi.org/10.2172/451213.

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Kim, Yong Joo. The growth of epitaxial iron oxides on platinum (111) as studied by X-ray photoelectron diffraction, scanning tunneling microscopy, and low energy electron diffraction. Office of Scientific and Technical Information (OSTI), May 1995. http://dx.doi.org/10.2172/109505.

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Wu, Judy, and Siyuan Han. Low Temperature Scanning Electron Microscope for Fabrication and Characterization of High-Tc Josephson Junctions and Circuits. Fort Belvoir, VA: Defense Technical Information Center, September 2000. http://dx.doi.org/10.21236/ada383240.

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