Dissertations / Theses: 'Low-voltage scanning electron microscopy'

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Kawano, Kayoko. "Application of the ultra high resolution, low voltage scanning electron microscopy in the materials science." Thesis, University of Manchester, 2012. https://www.research.manchester.ac.uk/portal/en/theses/application-of-the-ultra-high-resolution-low-voltage-scanning-electron-microscopy-in-the-materials-science(341c7955-1da7-49be-9dd3-a3f3248bae05).html.

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The efficiency of low voltage scanning electron microscopy, which presents near-surface information, has been well known for a long time. However, it is not widely known that the high resolution capability can only be achieved when the surface reveals the original characteristics of the materials without any deterioration due contamination. Therefore, initial attention in this study is directed at clarifying the efficient use of the ultra high resolution, low voltage SEM (UHRLV SEM), (Ultra55, Zeiss). The SEM images and the selected electrons for detection, and damage that occurs through UHRVL SEM observation are also researched. Subsequently, the most efficient specimen preparation technique, which is appropriate for the characteristics of the individual materials, is investigated for galvanized steel, ultrasonically welded alloys of Al6111 and AZ31 alloy, Ti6Al4V alloy honeycomb structure and a ceramic sensor. The outcomes of appropriate specimen preparation technique and use of the extremely Low-Voltage below 2.0 kV, are presented in the results section. The study also presented the challenge of improving the low compositional contrast for the dissimilar materials of aluminium and magnesium, and to reduce charging effects in an insulating material comprising a ceramic sensor. As an application of the surface prepared by the process in this study, 3D tomography is also introduced.

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Zaggout, Fatima Nouh. "Quantification of SE dopant contrast in low voltage scanning electron microscope." Thesis, University of York, 2007. http://etheses.whiterose.ac.uk/11013/.

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Mieth, Oliver. "Low Voltage Electron Emission from Ferroelectric Materials." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-62190.

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Electron emission from ferroelectric materials is initiated by a variation of the spontaneous polarization. It is the main focus of this work to develop ferroelectric cathodes, which are characterized by a signiﬁcantly decreased excitation voltage required to initiate the electron emission process. Particular attention is paid to the impact of the polarization on the emission process. Two materials are investigated. Firstly, relaxor ferroelectric lead magnesium niobate - lead titanate (PMN-PT) single crystals are chosen because of their low intrinsic coercive ﬁeld. Electron emission current densities up to 5 · 10^(−5) A/cm² are achieved for excitation voltages of 160 V. A strong enhancement of the emission current is revealed for the onset of a complete polarization reversal. Secondly, lead zirconate titanate (PZT) thin ﬁlms are investigated. A new method to prepare top electrodes with sub-micrometer sized, regularly patterned apertures is introduced and a stable electron emission signal is measured from these structures for switching voltages < 20 V. Furthermore, a detailed analysis of the polarization switching process in the PMN-PT samples is given, revealing a spatial rotation of the polarization vector into crystallographic easy axes, as well as the nucleation of reversed nano-domains. Both processes are initiated at ﬁeld strengths well below the coercive ﬁeld. The dynamics of the polarization reversal are correlated to the electron emission measurements, thus making it possible to optimize the eﬃciency of the investigated cathodes
Die Ursache für Elektronenemission aus ferroelektrischen Materialien ist eine Veränderung des Zustandes der spontanen Polarisation. Gegenstand der vorliegenden Arbeit ist eine Verringerung der dafür nötigen Anregungsspannung, wobei besonderes Augenmerk auf die Rolle der ferroelektrischen Polarisation innerhalb des Emissionsprozesses gelegt wird. Es werden zwei verschiedene Materialien untersucht. Das Relaxor-Ferroelektrikum Bleimagnesiumniobat - Bleititanat (PMN-PT) wurde aufgrund seines geringen Koerzitivfeldes ausgewählt. Es konnten Emissionsstromdichten von bis zu 5·10^(−5) A/cm² bei einer Anregungsspannung von 160 V erreicht werden. Bei Einsetzen eines vollständigen Umschaltens der Polarisation wurde eine deutliche Verstärkung des Emissionsstromes festgestellt. Desweiteren werden Untersuchungen an Bleizirkoniumtitanat (PZT) Dünnﬁlmen gezeigt. Eine neue Methode, eine Elektrode mit periodisch angeordneten Aperturen im Submikrometerbereich zu präparieren, wird vorgestellt. Diese Strukturen liefern ein stabiles Emissionssignal für Anregungsspannungen < 20 V. Eine detailierte Analyse des Schaltverhaltens der Polarisation der PMN-PT Proben zeigt sowohl eine Rotation des Polarisationsvektors als auch eine Nukleation umgeschaltener Nanodomänen. Beide Prozesse starten bei Feldstärken unterhalb des Koerzitivfeldes. Die ermittelte Zeitabhängigkeit des Schaltprozesses erlaubt Rückschlüsse auf den Emissionsprozess und erlaubt es, die Eﬃzienz der untersuchten Kathoden weiter zu optimieren

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Heller, Eric. "Ultra low signals in ballistic electron emission microscopy." Columbus, Ohio : Ohio State University, 2003. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1060979803.

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Thesis (Ph. D.)--Ohio State University, 2003.
Title from first page of PDF file. Document formatted into pages; contains xvii, 237 p.; also includes graphics. Includes abstract and vita. Advisor: Jonathan P. Pelz, Dept. of Physics. Includes bibliographical references (p. 232-237).

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MacDonald, Kinsey Elizabeth. "Analysis of Frozen Desserts Using Low-Temperature Scanning Electron Microscopy (LT-SEM)." Thesis, Clemson University, 2019. http://pqdtopen.proquest.com/#viewpdf?dispub=10982077.

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Commercial vanilla ice cream and other frozen desserts from the United States were analyzed for ice crystal length using low-temperature scanning electron microscopy (LT-SEM). Average ice crystal length was determined using multiple micrographs of each sample/product. Out of the products tested, 11 out of 15 samples had an average ice crystal length above the consumer sensory threshold limit of 55 µm. Products containing stabilizers tended to have smaller average ice crystal lengths than products without stabilizers. With a few exceptions, lower fat products tended to have larger ice crystals because there was less fat to stabilize the ice crystals. Four brands of frozen dessert were studied in detail: a super-premium ice cream (Brand P), a regular ice cream (Brand R), a dietary high protein ice cream (Brand D), and a non-dairy coconut-based frozen dessert (Brand ND). All brands were purchased from two separate supermarket supply chains (Store I and Store P) and analyzed for ice crystal size, weight loss/shrinkage, melting rate, texture, and sensory characteristics before and after being heat-shocked (HS). Brand P, R, and ND all had mean ice crystal sizes that were not significantly different when purchased from either Store I and Store P. The mean ice crystal size increased after HS for all brands except Brand ND. Brand D and Brand P had the highest melting rates, while Brand ND had a much lower melting rate than the other brands tested. Brand ND had a slight decrease in the average ice crystal size and had a decrease in peak force/hardness after HS, while all other brands had an increase in average ice crystal size and an increase in peak force/hardness after HS. Significance was determined using α = 0.05 for all sensory data. The iciness attribute was found to be significantly affected by both brand and HS and an increase in ice crystal size corresponded with an increase in iciness for most samples. The use of stabilizers and emulsifiers in the brands affected various melting characteristics. Additional research is needed on non-dairy frozen desserts and how their physical and sensorial properties are affected by heat-shock.

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Long, Renhai. "In-situ Scanning Electron Microscopy for Electron-beam Lithography and In-situ One Dimensional Nano Materials Characterization." ScholarWorks@UNO, 2009. http://scholarworks.uno.edu/td/966.

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In this thesis, we demonstrate in-situ scanning electron microscopy techniques for both electron beam lithography (EBL) and in-situ one dimensional nano materials electrical characterization. A precise voltage contrast image positioning for in-situ EBL to integrate nanowires into suspended structures for nanoswitch fabrication has been developed. The in-situ EBL eliminates the stage movement error and field stitching error by preventing any movements of the stage during the nanolithography process; hence, a high precision laser stage and alignment marks on the substrate are not needed, which simplifies the traditional EBL process. The ZnO piezoelectronics is also studied using nano-manipulators in scanning electron microscope. Methods to improve the contact have been demonstrated and the contacts between probe tips and the nanowires are found to have significant impact on the measurement results.

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Hopkins, Diane Marie. "Low temperature scanning electron microscopy and X-ray microanalysis of human urothelial neoplasms." Thesis, Lancaster University, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.306296.

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Jones, Darrell E. "Spontaneous step creation on (001) silicon surfaces studied with scanning tunneling microscopy and low-energy electron microscopy /." The Ohio State University, 1997. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487946776020229.

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Karlsson, Linda. "Transmission Electron Microscopy of 2D Materials : Structure and Surface Properties." Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-127526.

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During recent years, new types of materials have been discovered with unique properties. One family of such materials are two-dimensional materials, which include graphene and MXene. These materials are stronger, more flexible, and have higher conductivity than other materials. As such they are highly interesting for new applications, e.g. specialized in vivo drug delivery systems, hydrogen storage, or as replacements of common materials in e.g. batteries, bulletproof clothing, and sensors. The list of potential applications is long for these new materials. As these materials are almost entirely made up of surfaces, their properties are strongly influenced by interaction between their surfaces, as well as with molecules or adatoms attached to the surfaces (surface groups). This interaction can change the materials and their properties, and it is therefore imperative to understand the underlying mechanisms. Surface groups on two-dimensional materials can be studied by Transmission Electron Microscopy (TEM), where high energy electrons are transmitted through a sample and the resulting image is recorded. However, the high energy needed to get enough resolution to observe single atoms damages the sample and limits the type of materials which can be analyzed. Lowering the electron energy decreases the damage, but the image resolution at such conditions is severely limited by inherent imperfections (aberrations) in the TEM. During the last years, new TEM models have been developed which employ a low acceleration voltage together with aberration correction, enabling imaging at the atomic scale without damaging the samples. These aberration-corrected TEMs are important tools in understanding the structure and chemistry of two-dimensional materials. In this thesis the two-dimensional materials graphene and Ti3C2Tx MXene have been investigated by low-voltage, aberration-corrected (scanning) TEM. High temperature annealing of graphene covered by residues from the synthesis is studied, as well as the structure and surface groups on single and double Ti3C2Tx MXene. These results are important contributions to the understanding of this class of materials and how their properties can be controlled.

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Skoupý, Radim. "Quantitative Imaging in Scanning Electron Microscope." Doctoral thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2020. http://www.nusl.cz/ntk/nusl-432610.

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Tato práce se zabývá možnostmi kvantitativního zobrazování ve skenovacím (transmisním) elektronovém mikroskopu (S|T|EM) společně s jejich korelativní aplikací. Práce začíná popisem metody kvantitativního STEM (qSTEM), kde lze stanovenou lokální tloušťku vzorku dát do spojitosti s ozářenou dávkou, a vytvořit tak studii úbytku hmoty. Tato metoda byla použita při studiu ultratenkých řezů zalévací epoxidové pryskyřice za různých podmínek (stáří, teplota, kontrastování, čištění pomocí plazmy, pokrytí uhlíkem, proud ve svazku). V rámci této části jsou diskutovány a demonstrovány možnosti kalibračního procesu detektoru, nezbytné pozadí Monte Carlo simulací elektronového rozptylu a dosažitelná přesnost metody. Metoda je pak rozšířena pro použití detektoru zpětně odražených elektronů (BSE), kde byla postulována, vyvinuta a testována nová kalibrační technika založená na odrazu primárního svazku na elektronovém zrcadle. Testovací vzorky byly různě tenké vrstvy v tloušťkách mezi 1 až 25 nm. Použití detektoru BSE přináší možnost měřit tloušťku nejen elektronově průhledných vzorků jako v případě qSTEM, ale také tenkých vrstev na substrátech - qBSE. Obě výše uvedené metody (qSTEM a qBSE) jsou založeny na intenzitě zaznamenaného obrazu, a to přináší komplikaci, protože vyžadují správnou kalibraci detektoru, kde jen malý posun úrovně základního signálu způsobí významnou změnu výsledků. Tato nedostatečnost byla překonána v případě qSTEM použitím nejpravděpodobnějšího úhlu rozptylu (zachyceného pixelovaným STEM detektorem), namísto integrální intenzity obrazu zachycené prstencovým segmentem detektoru STEM. Výhodou této metody je její použitelnost i na data, která nebyla předem zamýšlena pro využití qSTEM, protože pro aplikaci metody nejsou potřeba žádné zvláštní předchozí kroky. Nevýhodou je omezený rozsah detekovatelných tlouštěk vzorku způsobený absencí píku v závislosti signálu na úhlu rozptylu. Obecně platí, že oblast s malou tloušťkou je neměřitelná stejně tak jako tloušťka příliš silná (použitelný rozsah je pro latex 185 - 1 000 nm; rozsah je daný geometrií detekce a velikostí pixelů). Navíc jsou v práci prezentovány korelativní aplikace konvenčních a komerčně dostupných kvantitativních technik katodoluminiscence (CL) a rentgenové energiově disperzní spektroskopie (EDX) spolu s vysokorozlišovacími obrazy vytvořenými pomocí sekundárních a prošlých elektronů.

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Gladh, Jörgen. "Scanning Tunneling Microscopy and Low-Energy Electron Diffraction Studies of Quantum Wires on Si(332)." Thesis, Karlstad University, Faculty of Technology and Science, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:kau:diva-378.

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In this master thesis I have investigated one-dimensional nanostructures, so called quantum wires. The goal was to grow them in situ on a stepped silicon surface and thereafter do several kinds of measurements, like Scanning Tunneling Microscopy, Low-Energy Electron Diffraction and Photoemission. The surface that was used was a Si(332) surface and the metals used in the growth of the quantum wires were gold and silver.

After the preparation and measurement of the stepped surface, evaporation of silver and gold was performed. The Scanning Tunneling Spectroscopy measurments were done on both Ag/Si(332) and Au/Si(332) surfaces. This gave information about the local density of stats on the surfaces and possible bandgaps.

All experiments were performed in ultra high vacuum, except the sample cutting and the first cleaning of the surface, which was done after the Shiraki method.

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Ligas, Aleš. "Studium beta fáze v Al-Mg-Si slitinách pomocí nekonvenčních metod elektronové mikroskopie." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2014. http://www.nusl.cz/ntk/nusl-231721.

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Aluminium Al-Mg-Si alloys are the most commonly used in automotive and construction industry. Hexagonal ’-phase is one of the metastable phases occured in this type of alloys. Unlike classic square -phase, this ’-phase is characterized by different crystalographic orientation to the matrix and shape. Standard method used for identification of aluminium alloys is scanning electron microscopy (SEM), because of its quickness and efficiency, but in case of very thin or damaged structures (as a result of metallographic process) it’s insufficient. Scanning low energy electron microscopy (SLEEM) can be appropriate for identification of mentioned precipitates due to its physical principles resulting in many advantages compared to SEM. So the most important benefits are interaction volume reduction (which leads to improvement of surface sensitivity), increase of material contrast (ability to change matrix / precipitates contrast) as well as crystalographic contrast.

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Kersell, Heath R. "Alternative Excitation Methods in Scanning Tunneling Microscopy." Ohio University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1449074449.

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Jones, Adrian Howard. "The acquisition, analysis and correlation of low energy electron diffraction and scanning tunnelling microscopy data from silicon surfaces." Thesis, University of York, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283430.

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Bolton, Samuel John. "The Nematalycidae (Acariformes): An exploration of large-scale morphological variation and evolution using low-temperature scanning electron microscopy." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1461084499.

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Bieber, Jay A. "Synthesis of Nanoscale Structures in Single Crystal Silicon Carbide by Electron Beam Lithography." Scholar Commons, 2004. https://scholarcommons.usf.edu/etd/960.

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Nanostructures were formed on diced specimens of several silicon carbide polytypes and silicon using electron beam lithography. A general introduction to nanostructure synthesis and electron beam lithography,are presented. A scanning electron microscope was retrofitted with a commercially available electron beam lithography package and an electrostatic beam blanker to permit nanoscale lithography to be performed. A process was first developed and optimized on silicon substrates to expose, poly-methyl-methacrylate (PMMA) resist with an electron beam to make nanoscale nickel masks for reactive ion etching. The masks consist of an array of nickel dots that range in size from 20 to 100 nm in diameter. Several nanoscale structures were then fabricated in silicon carbide using electron beam lithography. The structures produced are characterized by field emission Scanning Electron Microscopy.

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Whitfield, Thomas Britain. "An analysis of copper transport in the insulation of high voltage transformers." Thesis, University of Surrey, 2001. http://epubs.surrey.ac.uk/843581/.

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Examination of the paper insulation and copper stress braiding during stripdown of a number of Current Transformers (FMK type 400kV) has revealed the presence of dark deposits. Copper foils are often interspersed within layers of paper insulation and mineral oil found in transformer windings. The dark deposits were often found in association with these foils, affecting several layers of paper in addition to the layer in contact with the copper foil. This thesis describes the research undertaken to identify these deposits and establish a mechanism for the transportation through the paper layers. Preliminary investigation using scanning electron microscopy (SEM) in conjunction with energy dispersive X-ray analysis (EDX) has shown these dark deposits to be copper based. X-ray photoelectron spectroscopy was used to show that the transport of the copper deposit through the paper insulation was working under the influence of a diffusion controlled process, related to Fick's law. Laboratory studies in support of work designed to eliminate the problem have shown that corrosion of copper occurs in mineral oils containing a trace of oxygen. This corrosion is non protective in character and leads to migration of copper into adjacent layers of paper. It has been shown that the transport of copper through several layers of paper can be measured by XPS and that the concentration from one paper winding to the next declines in accord with Fick's law for non-steady state diffusion. Measurements of surface concentrations by XPS correlate well with measurements made with atomic absorption spectroscopy on solutions of extracts of the contaminated paper. The laboratory measurements have allowed determination of the diffusion coefficients and activation energy for the transport process and thus give a basis for interpretation of the diffusion profiles found in the transformer in terms of time and temperature of operation. The diffusion process is temperature dependant. The results have been used to produce long term prediction curves.

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Stein, Tobias, Marcel Wicke, Angelika Brueckner-Foit, Tina Kirsten, Martina Zimmermann, Fatih Buelbuel, and Hans-Jürgen Christ. "Crack growth behavior in an aluminum alloy under very low stress amplitudes." Cambridge University Press, 2017. https://tud.qucosa.de/id/qucosa%3A70663.

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The near-threshold behavior of long cracks is studied in this paper using precracked flat dogbone specimens of a commercial aluminum alloy in peak-aged and overaged conditions. After introducing the initial crack in compression precracking, the crack was propagated approximately with the constant range of the stress intensity factor at values just above or below the corresponding threshold values. It was found that there were two major mechanisms which kept the crack from continuous extension. First, the crack front was pinned by primary precipitates. This effect was rather pronounced and lead to significant kinking in the crack front and ductile ridges on the fracture surface. The second mechanism was shear-controlled crack extension of very long cracks with plastic zones ahead of the crack tip, very similar to stage-I small cracks. Interaction with primary precipitates deflected the shear-controlled cracks but did not change the crack extension mode.

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Gomes, Fernando Vacilotto. "Reparo ósseo perimplantar após LLTC em coelhos : esteriologia e MEV." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2013. http://hdl.handle.net/10183/85097.

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Estudos prévios sugerem que a laserterapia de baixa potência (LLLT) favorece o reparo ósseo perimplantar. Este estudo avaliou a influência da LLLT sobre o reparo ósseo perimplantar in vivo em 32 coelhos Nova Zelândia submetidos à exodontia do incisivo inferior esquerdo imediatamente seguida pela inserção de um implante osseointegrável. Os animais foram distribuídos aleatoriamente em quatro grupos: um grupo controle C (animais não irradiados) e três experimentais. Estes receberam 7 sessões de terapia laser (AsGaAl, infravermelho, 830 ηm, 50mW, CW), com intervalos de 48 horas. A dose de laser por sessão variou entre os grupos EI (10 J/cm²), EII (5 J/cm²) e EIII (20J/cm²). Os animais foram mortos e os espécimes preparados histologicamente para análise da superfície de contato entre osso e implante (BIC) e da área de neoformação óssea entre as espiras (BA), em esteriologia e Microscopia Eletrônica de Varredura (MEV). A concentração de cálcio na interface do tecido ósseo com o implante foi analisada por espectrometria de raios-X por dispersão de energia (EDS). Os resultados foram analisados estatisticamente. Para MEV, as médias de BIC foram significativamente maiores para os grupos EI (977,9 μm) e EIII (1021,1 μm), comparados a EII (761,5 μm) e C (807,8 μm). Em BA, EIII (122573,7 μm²) superou os valores de neoformação dos demais grupos. O EDS para concentração de cálcio não apresentou diferença entre os grupos. A análise de BIC por meio de esteriologia mostrou valores significativamente maiores para EIII (1045,3 μm) em relação aos demais grupos. Para a BA, os grupos EI (100068,3 μm²) e EIII (103934,5 μm²) mostraram grandezas significativamente maiores. O uso da LLLT, no protocolo descrito, influenciou positivamente o reparo ósseo perimplantar com aumento do contato do tecido ósseo com o implante principalmente na dose de 20 J/cm² por sessão, bem como maior volume ósseo neoformado entre as espiras.
Previous studies suggest that the low level laser therapy (LLLT) has a favorable effect on perimplant bone healing. This study evaluates the LLLT influence over perimplant bone healing pattern in 32 New Zealand male rabbits which were subimitted to a lower incisor extraction followed by an osseointegrated implant immediated insertion. The animals were randomly divided into four groups of eight animals each: a control group C (non-irradiated animal) and three experimental groups. They received seven laser therapy sessions (GaAlAs, infrared, 830 nm, 50 mW, CW), every 48 hours. The LLLT per session dose ranged between the groups EI (dose – 10 J/cm²), EII (dose – 5 J/cm²) and EIII (dose – 20 J/cm²). The animals were killed and the specimens received histological preparation for bone implant contact analysis (BIC) and Bone Area evaluation (BA) among the implant threads, both steriology and Scanning Electron Microscopy (SEM). The calcium concentration in bone implant interface were analysed by Energy-Disperse X-Ray Spectroscopy (EDS). The results were statistically analyzed. For SEM results, the BIC’s mean were significantly higher for the irradiated groups EI (977,9 μm) and EIII (1021,1 μm) compared to EII (761,5 μm) and C (807,8 μm). For BA, EIII (122573,7 μm²) showed better values for bone neoformation compared to other groups. For EDS calcium concentration there was no significantly difference between groups. The steriology analysis showed significantly higher values for BIC in EIII (1045,3 μm) compared to the other groups. For BA, EI (100068,3 μm²) and EIII (103934,5 μm²) were significantly higher. In this laser protocol, the use of LLLT induced positively perimplantar bone repair specially due to the bone implant contact improvement (20 J/cm² per session dose), as well as, better bone area neoformation within treads.

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Uhlář, Vít. "Víceelektrodový systém ionizačního detektoru pro environmentální rastrovací elektronový mikroskop." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-221175.

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Thesis deals with environmental scanning electron microscopy and with detection of signal electrons by using ionization detector. First part talks about the principle of environmental scanning electron microscope. Second part describes signals generated by interaction of primary electron beam with sample. Third section explains the principle of impact ionization and ionization detector. Experimental part deals with usage of segmental ionization detector and with measuring of signal amplification from copper and platinum. Thesis also examines arrangement of electrodes of ionisation detector on material contrast and examines also on influence of voltage contrast on base - emitter junction of an NPN bipolar transistor. All experiments were carried out in dependency on saturated water vapour pressure in sample chamber.

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Mikmeková, Šárka. "Kvantitativní mapování dopantu v polovodiči pomocí kontrastu injektovanéhonáboje v rastrovacím mikroskopu s velmi pomalými elektrony." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2009. http://www.nusl.cz/ntk/nusl-228856.

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This master's thesis deals with study of the injected charge contrast mechanism of doped semiconductors by using the ultra – high vacuum scanning low electron energy microscope (UHV SLEEM). The aims of this work were to explain the injected charge contrast mechanism, to ability of this contrast mechanism to map the dopant density quantitatively and to identify the influencing factors.

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Cheong, Lin Lee. "Low-voltage spatial-phase-locked scanning-electron-beam lithography." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/60159.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.
Includes bibliographical references (p. 63-64).
Spatial-phase-locked electron-beam lithography (SPLEBL) is a method that tracks and corrects the position of an electron-beam in real-time by using a reference grid placed above the electron-beam resist. In this thesis, the feasibility of spatial-phase-locked lowvoltage electron-beam lithography is investigated. First, the feasibility of low-voltage electron-beam lithography (LVEBL) is experimentally verified using the resists hydrogen silsesquioxane (HSQ) and polymethyl methacrylate (PMMA). Unlike electronbeam lithography at higher voltages, LVEBL has minimal proximity effects and is not resolution-limited by these effects. The fabrication of ultra-thin photoresist grids is investigated and the secondary electron signal levels of these grids are measured.
by Lin Lee Cheong.
S.M.

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Mutta, Geeta Rani. "Propriétés structurales, optiques et électroniques des couches d’InN et hétérostructures riches en indium pour applications optoélectroniques." Caen, 2012. http://www.theses.fr/2012CAEN2013.

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Les semi-conducteurs nitrures (AlN, GaN, InN) focalisent une activité de recherche intense en raison de nombreuses applications comme les diodes électroluminescentes, les composants de puissance ou hyperfréquence. Dans cette recherche, nous avons abordé le travail sous deux angles: a) la conduction électrique dans les couches d'InN produites par croissance épitaxiale aux jets moléculaires assistée par plasma (PAMBE) et une recherche sur l'origine de la forte émission bleue dans les puits de quantiques d'InGaN/GaN. L'accumulation d'électron en surface dans les couches d'InN constitue une limitation importante pour la fabrication de composants. Au cours de ce travail, nous avons exploré l'utilisation des mesures de bruit de basse fréquence sur les couches d'InN et pu accéder à leur conductivité électrique en volume. L'étude des puits quantiques d'InGaN/GaN, obtenue par croissance épitaxiale aux jets moléculaires (MBE) ou épitaxie en phase vapeurs aux organométalliques (MOVPE) , a été effectuée par analyses de la microstructure par microscopie électronique en transmission (MET, HRTEM et STEM) en corrélation avec les propriétés optiques d'un grand nombre d'échantillons provenant de conditions de croissance différentes. Ce travail nous a permis d'acquérir une vision plus critique du rôle des conditions de fabrication et des paramètres comme la morphologie, les fluctuations de composition et la présence des défauts en V sur les explications actuellement avancées pour la forte efficacité d'émission dans les puits quantiques d' InGaN/GaN
The nitride semiconductors (AlN, GaN, InN) are subject to a large research effort due to their numerous applications, such as light emitting diodes, high power and high frequency components. Following the trend, the aim of this dissertation has been twofold: first, we have probed the bulk electrical conduction in InN layers, second, we investigated the origin of the high emission efficiency in InGaN/GaN Quantum Wells (QWs). The surface electron accumulation in InN layers is still an important limitation to device applications. W have explored this point using low frequency noise measurements on Plasma Assisted Molecular Beam Epitaxy (PAMBE) InN layers and we demonstrated that the bulk electrical conductivity of InN can be accessed. The investigation of quantum wells produced by molecular beam epitaxy (MBE) or matalorganic vapour phase epitaxy (MOVPE), has been carried out through microstructural analyses by transmission electron microscopy techniques(TEM, HRTEM, STEM) in correlation with optica properties on a large number of samples grown in different growth conditions. This experimental work has allowed us to obtain a critical view on the role of the growth conditions and such parameters as the well morphology, composition fluctuations, as well as the V shaped defects on the current explanations of high emission efficiency in InGaN/GaN QWs

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24

Nye, Philip. "Computer instrumentation for voltage contrast measurement in the scanning electron microscope." Thesis, University of Edinburgh, 1990. http://hdl.handle.net/1842/15545.

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The scanning electron microscope is widely used in industry as a tool in both development and production stages of integrated circuit manufacture, firstly for very high magnification topographical inspection of circuits and secondly for various diagnostic techniques in which the electron beam interacts in some way with the circuit. The most used of these techniques is voltage contrast, in which the scanning electron microscope is used to measure voltages and waveforms within the operating circuit. There are an increasing number of systems available for making voltage contrast measurements. This thesis describes the designing, building, interconnecting and operating of instrumentation to improve the speed and accuracy and above all the usability of a computer based voltage contrast scanning electron microscope. A fast and efficient technique was developed for making accurate quantitative measurements on ICs which avoids the problems of drift due to contamination and charging which usually hamper voltage contrast instruments in real situations. Studies of the mechanisms of oxide charging and its effects on readings are made. Finally a scheme for integration of these methods into a fully computerised scanning electron microscope is proposed.

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25

Taylor, Mackenzie C. "GOLD FROM THE TYPE 4 ORE OF ROUND MOUNTAIN, NEVADA: A TEXTURAL AND MINERALOGICAL STUDY OF MACROCRYSTALLINE GOLD VS. DISSEMINATED GOLD." Miami University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=miami1512407677037903.

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26

Gass, Mhairi Hope. "Low-loss electron energy loss spectroscopy in a scanning transmission electron microscope of GaInNAs." Thesis, University of Liverpool, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.415656.

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27

Mannsfeld, Stefan. "Ordering in weakly bound molecular layers: organic-inorganic and organic-organic heteroepitaxy." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2004. http://nbn-resolving.de/urn:nbn:de:swb:14-1098888571984-95956.

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It is an aim of this work to provide insight into the energetic influence on the ordering of molecular thin films on crystalline substrates. Here, the term substrate either refers to inorganic crystal surfaces or highly ordered layers of another organic molecular species. In order to calculate the total interface potential of extended molecular domains, a new calculation technique (GRID technique) is developed in the first part of this work. Compared to the standard approach, this method accelerates the potential calculation drastically (times 10000). The other parts of the thesis are dedicated to the comparison of experimental results (obtained by scanning tunneling microscopy and electron diffraction) to the optimal layer structure as predicted by optimization calculations. Potential calculations which are performed for the system perylenetetracarboxylicdianhydride (PTCDA) on graphite demonstrate that point-on-line coincident structures correspond to energetically favorable alignments of the molecular lattice with respect to the substrate lattice. The capability of the GRID technique to predict the optimal layer structure is demonstrated for the system peri-hexabenzocoronene (HBC) on graphite. The organic-organic heteroepitaxy system PTCDA on HBC on graphite is investigated in order to clarify to which extent the ordering mechanism there differs from that of the organic-inorganic heteroepitaxy system PTCDA on graphite. As a result of this investigation, a new type of epitaxy, i.e., substrate induced ordering is found. This new epitaxy type is governed by the inner structure of the substrate lattice unit cell. Here, the substrate surface is a layer of organic molecules itself, hence the substrate surface unit cell does indeed exhibit a complex inner structure. A generalized classification scheme for epitaxial growth incorporating this new type of epitaxy is proposed. In the last chapter, the structure of the first layers of titanylphthalocyanine (TiOPc) on Au(111) is investigated and compared to potential optimization calculations. The correspondence of experimental and theoretical results provides evidence that the GRID technique can, in principle, also be applied to molecular layers on metal surfaces
Das Ziel der vorliegenden Arbeit ist es, Einblicke in die energetischen Einflüsse, die zur Ausbildung der Schichtstruktur organischer Moleküle auf kristallinen Substraten führen, zu geben. Diese Substrate sind entweder Oberflächen anorganische Kristalle oder selbst hochgeordnete Molekülschichten. Um das totale Grenzflächenpotential ausgedehnter Moleküldomänen berechnen zu können, wird im ersten Teil der Arbeit eine neue Berechnungsmethode (GRID Technik) vorgestellt. Im Vergleich mit herkömmlichen Berechnungsmethoden auf der Basis molekülmechanischer Kraftfelder ist diese neue Methode daher um ein Vielfaches schneller (Faktor 100000). Die folgenden Teile der Arbeit sind dem Vergleich experimenteller Ergebnisse (Rastertunnelmikroskopie und Elektronenbeugung) mit, durch Potentialoptimierungsrechnungen als energetisch günstig vorhergesagten, Schichtstrukturen gewidmet. So kann für das System Perylentetracarbonsäuredianhydrid (PTCDA) auf Graphit mittels Potentialberechnungen nachgewiesen werden, daß die experimentell gefundenen ?Point-on-line koinzidenten? Strukturen energetisch günstige Anordnungen des Molekülgitters bezüglich des Substratgitters darstellen. Die Eignung der neuen Berechnungsmethode zur Vorhersage der günstigsten Adsorbatgitterstruktur für ein gegebenes System aus Molekül und Substrat, wird anhand des Systems peri-Hexabenzocoronen (HBC) auf Graphit demonstriert. Das organisch-organische Heteroepitaxiesystem PTCDA auf HBC auf Graphit wird untersucht, um zu klären, inwieweit sich die dafür gültigen Ordnungsmechanismen von denen unterscheiden, die für das Wachstum des organisch-anorganischen Heteroepitaxiesystems PTCDA auf Graphit verantwortlich sind. Dabei gelingt es, eine bisher nicht klassifizierte Art von Epitaxie, d.h. substratinduzierter Ordnung, nachzuweisen. Dieser neue Epitaxietyp ist bedingt durch die innere Struktur einer Substrateinheitszelle - das Substrat ist ja hier selbst eine Schicht geordneter Moleküle, die natürlich eine innere Struktur aufweisen. Im folgenden wird ein verallgemeinertes Klassifizierungssystem für Epitaxietypen abgeleitet, welches den neuen Epitaxietyp beinhaltet. Im letzten Kapitel wird die Struktur von der ersten Lagen von Titanylphthalocyanin (TiOPc) auf Au(111) experimentell untersucht und mit entsprechenden Potentialoptimierungsrechnungen verglichen. Die Übereinstimmung von experimentellen und theoretischen Ergebnissen zeigt, daß die GRID Technik, zumindest prinzipiell, auch für Molekülschichten auf Metallsubstraten anwendbar ist

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Nag, Pranab Kumar. "Unusual electronic properties in LiFeAs probed by low temperature scanning tunneling microscopy and spectroscopy." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-231628.

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In this thesis, the electronic properties in superconducting LiFeAs single crystal are investigated using low temperature scanning tunneling microscopy and spectroscopy (STM/S) at various temperatures. For this purpose, the differential conductance (dI/dV) measured by STS which is directly proportional to the local density of states (LDOS) of the sample to the sub-atomic precision, is used together with the topography information. The dI/dV spectra within the ±1 V energy range reveal a characteristic feature at around -350 mV to -400 mV in stoichiometric LiFeAs. This feature seems to be a universal property among all the Fe-based high temperature superconductors, because it is also found in Fe0.965Se1.035 and NaFe0.975Co0.025As single crystals at the energy of -210 mV and -200 mV, respectively. The temperature dependent spectroscopy data averaged over a spatially fixed clean area of 2 nm × 2 nm are successfully executed between 5 K and 20 K. The two distinct superconducting phases with critical temperatures Tc = 16 K and 18 K are observed. In addition, the distance between the dip position outside the superconducting gap and the superconducting coherence peak in the spectra remains temperature independent which confirms that it is not connected to an antiferromagnetic (AFM) spin resonance. The temperature dependent spectra have been measured between 5 K and 61 K within the energy range of ±100 mV as well. The hump structure at 42 mV tends to disappear around 60 K from unknown origin. The temperature dependent quasiparticle interference (QPI) has been studied within the temperature range between 6.7 K and 25 K and analyzed by the Fourier transformation of the measured spectroscopic maps. The dispersion plots in momentum space as a function of temperature show an enhancement of QPI intensity (±5.5 mV) within the superconducting gap at the Fermi level at 6.7 K near q ~ 0. This is interpreted on the basis of Andreev bound state. In both polarities outside of this, a depletion of QPI intensity is noticed between 5.5 mV and around 9 mV. At positive energies, the QPI intensity becomes very rich above 9 mV. The size of the enhanced QPI intensity near the Fermi level, and the edge of the rich QPI intensity beyond 9 mV are found to behave like superconducting order parameter with rising of temperature. Furthermore, an energy mode peaked at around 14 mV appears in the integrated QPI intensity below superconducting Tc (6.7 K). This is consistent with the observed peak at 1st derivative of the dI/dV spectra. In both of these cases, such 14 mV peak is suppressed at normal state (25 K). This mode is therefore directly related to superconductivity in LiFeAs. The off-stoichiometric LiFeAs single crystal with superconducting Tc of 6.5 K has a 10 mV rigid band shift of the Fermi level towards electron doping. The absence of the rich QPI intensity between 9 mV and 17 mV is found compared to the stoichiometric LiFeAs, and hence the 14 mV mode is absent here. This brings us to conclude once more time that such 14 mV energy mode is relevant for superconductivity in LiFeAs.

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Babonis, Gregory S. "Low Temperature Scanning Tunneling Microscope for Single Atom Manipulation." Ohio University / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1058475483.

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30

Forker, Roman. "Electronic Coupling Effects and Charge Transfer between Organic Molecules and Metal Surfaces." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-26163.

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We employ a variant of optical absorption spectroscopy, namely in situ differential reflectance spectroscopy (DRS), for an analysis of the structure-properties relations of thin epitaxial organic films. Clear correlations between the spectra and the differently intense coupling to the respective substrates are found. While rather broad and almost structureless spectra are obtained for a quaterrylene (QT) monolayer on Au(111), the spectral shape resembles that of isolated molecules when QT is grown on graphite. We even achieve an efficient electronic decoupling from the subjacent Au(111) by inserting an atomically thin organic spacer layer consisting of hexa-peri-hexabenzocoronene (HBC) with a noticeably dissimilar electronic behavior. These observations are further consolidated by a systematic variation of the metal substrate (Au, Ag, and Al), ranging from inert to rather reactive. For this purpose, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) is chosen to ensure comparability of the molecular film structures on the different metals, and also because its electronic alignment on various metal surfaces has previously been studied with great intensity. We present evidence for ionized PTCDA at several interfaces and propose the charge transfer to be related to the electronic level alignment governed by interface dipole formation on the respective metals
Zur Analyse der Struktur-Eigenschafts-Beziehungen dünner, epitaktischer Molekülfilme wird in situ differentielle Reflexionsspektroskopie (DRS) als Variante der optischen Absorptionsspektroskopie verwendet. Klare Zusammenhänge zwischen den Spektren und der unterschiedlich starken Kopplung zum jeweiligen Substrat werden gefunden. Während man breite und beinahe unstrukturierte Spektren für eine Quaterrylen (QT) Monolage auf Au(111) erhält, ist die spektrale Form von auf Graphit abgeschiedenem QT ähnlich der isolierter Moleküle. Durch Einfügen einer atomar dünnen organischen Zwischenschicht bestehend aus Hexa-peri-hexabenzocoronen (HBC) mit einem deutlich unterschiedlichen elektronischen Verhalten gelingt sogar eine effiziente elektronische Entkopplung vom darunter liegenden Au(111). Diese Ergebnisse werden durch systematische Variation der Metallsubstrate (Au, Ag und Al), welche von inert bis sehr reaktiv reichen, untermauert. Zu diesem Zweck wird 3,4,9,10-Perylentetracarbonsäuredianhydrid (PTCDA) gewählt, um Vergleichbarkeit der molekularen Filmstrukturen zu gewährleisten, und weil dessen elektronische Anordnung auf verschiedenen Metalloberflächen bereits eingehend untersucht worden ist. Wir weisen ionisiertes PTCDA an einigen dieser Grenzflächen nach und schlagen vor, dass der Ladungsübergang mit der elektronischen Niveauanpassung zusammenhängt, welche mit der Ausbildung von Grenzflächendipolen auf den entsprechenden Metallen einhergeht

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31

Dolle, Christian [Verfasser], Erdmann [Akademischer Betreuer] Spiecker, and Erdmann [Gutachter] Spiecker. "Low-voltage and in situ Electron Microscopy of Graphene and its Defects / Christian Dolle ; Gutachter: Erdmann Spiecker ; Betreuer: Erdmann Spiecker." Erlangen : Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), 2019. http://d-nb.info/1180724089/34.

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32

Dou, Ziwei. "Investigation on high-mobility graphene hexagon boron nitride heterostructure nano-devices using low temperature scanning probe microscopy." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/283618.

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This thesis presents several experiments, generally aiming at visualising the ballistic and topological transport on the high-mobility graphene/boron nitride heterostructure using the scanning gate microscope. For the first experiment, we use the scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and in a weak perpendicular magnetic field. We employ a magnetic focusing transport configuration to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collector probe. The local potential generated by the scanning tip in the vicinity of the carriers deflects their trajectories, modifying the proportion of carriers focused into the collector. By measuring the voltage at the collector while scanning the tip, we are able to obtain images with arcs that are consistent with the expected cyclotron motion. We also demonstrate that the tip can be used to redirect misaligned carriers back to the collector. For the second experiment, we investigate the graphene van der Waals structures formed by aligning monolayer graphene with insulating layers of hexagonal boron nitride which exhibit a moiré superlattice that is expected to break sublattice symmetry. However, despite an energy gap of several tens of millielectronvolts opening in the Dirac spectrum, electrical resistivity remains lower than expected at low temperature and varies between devices. While subgap states are likely to play a role in this behaviour, their precise nature is still unclear in the community. We therefore perform a scanning gate microscopy study of graphene moiré superlattice devices with comparable activation energy but with different charge disorder levels. In the device with higher charge impurity ($\sim$ 10$^-$ cm$^{-2}$) and lower resistivity ($\sim$ 10 k$\Omega$) at the Dirac point we observe scanning gate response along the graphene edges. Combined with simulations, our measurements suggest that enhanced edge doping is responsible for this effect. In addition, a device with low charge impurity ($\sim$ 10$^{9}$ cm$^{-2}$) and higher resistivity ($\sim$ 100 k$\Omega$) shows subgap states in the bulk. Our measurements provide alternative model to the prevailing theory in the literature in which the topological bandstructures of the graphene moiré superlattices entail an edge currents shunting the insulating bulk. In the third experiment, we continue our study in the graphene moir$\acute e$ superlattices with the newly reported non-local Hall signals at the main Dirac point. It has been associated with the non-zero valley Berry curvature due to the gap opening and the nonlocal signal has been interpreted as the signature of the topological valley Hall effects. However, the nature of such signal is still disputed in the community, due to the vanishing density of states near the Dirac point and the possible topological edge transport in the system. Various artificial contribution without a topological origin of the measurement scheme has also been suggested. In connection to the second experiment, we use the scanning gate microscope to image the non-local Hall resistance as well as the local resistance in the current path. By analysing the features in the two sets of images, we find evidence for topological Hall current in the bulk despite a large artificial components which cannot be distinguished in global transport measurement. In the last experiment, we show the development of a radio-frequency scanning impedance microscopy compatible with the existing scanning gate microscopy and the dilution refrigerator. We detailed the design and the implementation of the radio-frequency reflectometry and the specialised tip holder for the integration of the tip and the transmission lines. We demonstrate the capability of imaging local impedance of the sample by detecting the mechanical oscillation of the tip, the device topography, and the Landau levels in the quantum Hall regime at liquid helium temperature and milli-Kelvin temperature.

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33

Temirov, Ruslan [Verfasser]. "Studying complex metal-molecule interface with low temperature scanning tunneling microscope : from electronic structure to charge transport / Ruslan Temirov." Bremen : IRC-Library, Information Resource Center der Jacobs University Bremen, 2008. http://d-nb.info/1034984187/34.

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34

Trevisiol, Céline. "Effet de la microstructure et de la rugosité sur le comportement au frottement et à l’usure d’aciers faiblement alliés." Thesis, Compiègne, 2018. http://www.theses.fr/2018COMP2430.

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Cette thèse est un travail expérimental mettant en évidence les effets de la microstructure et de la rugosité sur le comportement au frottement et à l'usure d'aciers faiblement alliés. Une méthodologie est mise en place pour sélectionner des aciers faiblement alliés et générer des microstructures permettant de répondre à cet objectif. Différents échantillons caractérisés par une composition chimique, une microstructure et une macro-dureté sont générés et caractérisés tribologiquement par des essais de frottement. Une réflexion originale a été menée pour étudier le comportement tribologique d'un même acier avec différentes microstructures pour le même niveau de macro-dureté. Ces essais de frottement permettent également d'étudier l'effet du chargement normal sur la contribution de la microstructure et de la rugosité sur le comportement tribologique. Cette caractérisation est réalisée par des mesures de coefficient de frottement, du taux d'usure, des paramètres de rugosité, d'essais de micro-duretés et de nano-indentation, d'analyses dispersives en énergie, d'observations par microscopie électronique à balayage et d'analyses des mécanismes d'usure. Cette approche a permis d'étudier 273 configurations et de dégager différentes tendances sur cette thématique. Parallèlement, une confrontation entre les résultats issus de l'approche expérimentale et d'une approche de modélisation du comportement tribologique de microstructures dual-phase a été réalisée. Cela a permis de mettre en place une réflexion sur les modes de distribution de la pression appliquée entre les phases lors des essais expérimentaux réalisés en fonction de la rugosité et du chargement normal
This thesis is an experimental work highlighting the effects of microstructure and roughness on friction and wear behavior of low alloy steels. That's why, low alloyed steels are carrefully selected in order to generate precise microstructures. Thus, different samples characterized by a chemical composition, a microstructure and a macro-hardness are generated and characterized tribojogically by performing friction tests. An original reflection was conducted to study the tribological behavior of the same steel with different microstructures for the same level of macrohardness. In addition, the effect of normal load on the contribution of microstructure and roughness on tribological behavior is investigated. This characterization is carried out by measurements of friction coefficient, wear rate, roughness parameters, micro-hardness and nanoindentation tests, energy dispersive analyzes, observatibns by using scanning electron microscopy and analysis of wear mechanisms. Finally, 273 configurations are studied and different trends are identified, Moreover, a comparison between the results from an experimental approach and a modeling approach of the tribological behavior of dual-phase microstructures was carried out. From this study, reflections are performed as regards the modes of the applied pressure pressure between the phases as function of roughness and normal load during the experimental friction tests

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35

Ruess, Frank Joachim Physics Faculty of Science UNSW. "Atomically controlled device fabrication using STM." Awarded by:University of New South Wales. Physics, 2006. http://handle.unsw.edu.au/1959.4/24855.

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We present the development of a novel, UHV-compatible device fabrication strategy for the realisation of nano- and atomic-scale devices in silicon by harnessing the atomic-resolution capability of a scanning tunnelling microscope (STM). We develop etched registration markers in the silicon substrate in combination with a custom-designed STM/ molecular beam epitaxy system (MBE) to solve one of the key problems in STM device fabrication ??? connecting devices, fabricated in UHV, to the outside world. Using hydrogen-based STM lithography in combination with phosphine, as a dopant source, and silicon MBE, we then go on to fabricate several planar Si:P devices on one chip, including control devices that demonstrate the efficiency of each stage of the fabrication process. We demonstrate that we can perform four terminal magnetoconductance measurements at cryogenic temperatures after ex-situ alignment of metal contacts to the buried device. Using this process, we demonstrate the lateral confinement of P dopants in a delta-doped plane to a line of width 90nm; and observe the cross-over from 2D to 1D magnetotransport. These measurements enable us to extract the wire width which is in excellent agreement with STM images of the patterned wire. We then create STM-patterned Si:P wires with widths from 90nm to 8nm that show ohmic conduction and low resistivities of 1 to 20 micro Ohm-cm respectively ??? some of the highest conductivity wires reported in silicon. We study the dominant scattering mechanisms in the wires and find that temperature-dependent magnetoconductance can be described by a combination of both 1D weak localisation and 1D electron-electron interaction theories with a potential crossover to strong localisation at lower temperatures. We present results from STM-patterned tunnel junctions with gap sizes of 50nm and 17nm exhibiting clean, non-linear characteristics. We also present preliminary conductance results from a 70nm long and 90nm wide dot between source-drain leads which show evidence of Coulomb blockade behaviour. The thesis demonstrates the viability of using STM lithography to make devices in silicon down to atomic-scale dimensions. In particular, we show the enormous potential of this technology to directly correlate images of the doped regions with ex-situ electrical device characteristics.

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36

Nag, Pranab Kumar [Verfasser], Bernd [Akademischer Betreuer] Büchner, and Rüdiger [Gutachter] Klingeler. "Unusual electronic properties in LiFeAs probed by low temperature scanning tunneling microscopy and spectroscopy / Pranab Kumar Nag ; Gutachter: Rüdiger Klingeler ; Betreuer: Bernd Büchner." Dresden : Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://d-nb.info/1150310332/34.

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37

Nag, Pranab Kumar [Verfasser], Bernd Akademischer Betreuer] Büchner, and Rüdiger [Gutachter] [Klingeler. "Unusual electronic properties in LiFeAs probed by low temperature scanning tunneling microscopy and spectroscopy / Pranab Kumar Nag ; Gutachter: Rüdiger Klingeler ; Betreuer: Bernd Büchner." Dresden : Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-231628.

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38

Odehnal, Adam. "Scintilační detektor sekundárních elektronů pro environmentální rastrovací elektronový mikroskop." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2016. http://www.nusl.cz/ntk/nusl-242063.

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Thesis deals with theoretical knowledge about scanning electron microscopy and environmental scanning electron microscopy. It describes principle of operation, signals generated by interaction between primary electron beam and specimen and means of detection of secondary electron signal in environmental conditions using scintillation detector. Furthermore, thesis focuses on optimization of detection od secondary electrons by adjusting electrode system of scintillation detector. Computer program Simion is used for modelling signal electron trajectories for proper adjustments. Simulation were starting-point for adjusting the design of the detector. Detection efficiency of adjusted detector was determined by evaluating signal magnitude from captured images, secondary electron detection capability from voltage contrast and quality of the captured images from signal/noise ratio.

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39

Berger, Claire. "Propriétés électroniques des alliages quasicristallins AlMn." Grenoble 1, 1987. http://www.theses.fr/1987GRE10067.

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40

Meier, Matthias. "Influence de la liaison chimique sur la structure des surfaces d'alliages métalliques complexes." Thesis, Université de Lorraine, 2015. http://www.theses.fr/2015LORR0257/document.

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Un alliage métallique complexe est un intermétallique dont la maille est constituée d'un nombre important d'atomes et dont la structure peut être souvent décrite comme un empilement de motifs d'atomes reliés par des liaisons de type covalent. Al5Co2 est l'un de ces composés et est un catalyseur potentiel pour la semi-hydrogénation d'acétylène. L'influence de la structure tridimensionnelle sur les surfaces bidimensionnelles et donc la réactivité est étudiée. Pour se faire, le système massif est analysé en utilisant la DFT afin d'éclaircir ses propriétés thermodynamiques, électroniques et vibrationnelles. Les valeurs calculées, expérimentales et celles de la littérature sont en bon accord. La structure des surfaces de bas indice, (001), (100) et (2-10) est étudiée. Une combinaison de techniques d'analyse de surface sous ultra-vide - LEED, STM - et de DFT est utilisée pour les déterminations structurales. Les résultats indiquent que: (i) la structure des surfaces dépend des conditions de préparation, comme la température de recuit, (ii) la structure des surfaces peut être interprétée comme étant constituée de motifs tronqués où certaines liaisons de type covalent sont brisées. Les sites et les énergies d'adsorption des molécules impliquées dans la réaction de semi-hydrogénation sont calculés pour les trois surfaces. Pour les sites favorables, des distances spécifiques entre atomes d'hydrogène adsorbés et atomes de Co de surface et de sous-surface peuvent être observées. Les atomes de Co de sous-surface ont un caractère donneur d'électrons, stabilisant les atomes adsorbés en surface. En se basant sur des calculs NEB, de possibles chemins réactionnels sur la surface (2-10) sont proposés. L'activité calculée est similaire à celle obtenue pour la surface d'Al13Co4, qui est considérée comme un bon catalyseur. La sélectivité - la compétition entre la désorption d'éthylène et son hydrogénation en éthyle - est discutée
A complex metallic alloy is an intermetallic with a large unit cell and whose structure can often be seen as a stacking of motifs of strongly covalent-like bonded atoms. Al5Co2 is such a compound and is a potential catalyst for the semi-hydrogenation of acetylene. The influence of the 3-dimensional structure on 2-dimensional surfaces is investigated. Therefore, the bulk system is analysed using DFT to gain insight in the thermodynamic, electronic and vibrational properties. Good agreements between calculated results, experimental ones and results found in the literature are obtained. The low index (001), (100) and (2-10) surfaces are investigated. A combination of surface analysis techniques under ultra high vacuum - LEED, STM - and DFT calculations is used for the structural investigations. The results show that: (i) the surface structure depends on the preparation conditions, such as the annealing temperature, (ii) the surface structure can be interpreted as truncated motif parts, where the covalent-like bonds are broken. Adsorption sites and energies of molecules involved in the semi-hydrogenation reaction are calculated for all three surfaces. For favourable adsorption sites, specific distances of adsorbed H atoms with Co surface and subsurface atoms are observed. These Co subsurface atoms have an electron donor character, stabilising the adsorbed atoms at the surface. Based on NEB calculations, possible reaction paths on the (2-10) surface are proposed. The calculated activity is similar to the one obtained for the Al13Co4 surface, which is considered a good catalyst. The selectivity - the competition between desorption of ethylene and its further hydrogenation - is discussed

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41

Konijn, Mark. "Multilevel Nanoengineering for Imprint Lithography." Thesis, University of Canterbury. Electrical and Computer Engineering, 2005. http://hdl.handle.net/10092/1071.

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The current trend in pushing photo lithography to smaller and smaller resolutions is becoming increasingly difficult and expensive. Extreme ultra-violet lithography is an alternate method that has the potential to provide feature sizes down to 30 nm, however, it will come at an even greater cost. Nanoimprint lithography (NIL) is another lithographic technique which is promising to provide very high resolutions at a relatively low cost. Imprinting works by using a mold with a surface patterned with the required nano structures and pressing it into a substrate coated with a deformable polymer. Due to its direct pattern replication technique, it is very capable of reproducing three-dimensional structures, however limited research has been performed on this to date. In this study, investigations have been performed into developing a reliable process for creating SiN molds with sub-100 nm structures with variable height control. The process relies on a negative tone electron beam resist which can be patterned to various thicknesses by varying the exposure dosage. This allows for the creation of complex multi-layer structures in a single electron beam lithography step. These patterns then have been transferred into the SiN substrate by a single reactive ion etch. From here the mold is ready for use in imprinting. Study has also been performed into imprinting process as well. This includes the development of an imprint press, the manner in which NIL works. Investigations have been performed into the imprinting performance of 3D molds. Thermal expansion issues have been found and addressed, as have adhesion problems. Some other aspects of 3D NIL which have not been addressed in this study have been outlined in future work for further investigation.

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Rudolfová, Zdena. "Návrh a testování vhodné metodiky pro čištění povrchů preparátů in situ pro elektronovou mikroskopii pomalými elektrony." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2012. http://www.nusl.cz/ntk/nusl-230351.

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This thesis concentrates on the methodology of semiconductor samples preparation for low voltage scanning electron microscopy. In the first part a detailed theory of sample imaging using electron beam and difference between classical scanning electron microscopy (SEM) and low voltage scanning electron microscopy (LVSEM) is described. It is given a description of a contrast formation in SEM and LVSEM and theories describing a contrast formation of differently doped semiconductors. The second part contains experimental data. The advantages and disadvantages of cleavage and focused ion beam (FIB) milling as sample preparation techniques are discussed. FIB was found as the best method for sample preparation for the analysis of precisely defined location on the sample. It is necessary to use the lowest possible FIB accelerating voltage for final polishing, ideally 1 kV.

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Vasseur, Guillaume. "Étude par ARPES et STS des propriétés éléctroniques de réseaux métalliques et organiques nanostructurés." Thesis, Université de Lorraine, 2014. http://www.theses.fr/2014LORR0151/document.

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Dans ce travail nous démontrons, au travers de deux études, l'intérêt fondamental du couplage des techniques de photoémission résolue en angle (ARPES) et de spectroscopie tunnel (STS) dans l'analyse des propriétés électroniques d'interfaces nanostructurées. Dans la première partie, nous présentons une méthodologie permettant de déduire le potentiel de surface induit par la reconstruction triangulaire d'une monocouche d'Ag/Cu(111). Cette méthode est basée sur la mesure des gaps caractérisant la structure de bande de l'état de Shockley du système aux points de haute symétrie de la zone de Brillouin. L'évaporation d'adatomes de potassium permet d'augmenter le nombre de gaps accessibles en photoémission en décalant les bandes vers les états occupés. Dans un modèle d'électrons presque libres, leur amplitude nous donne accès aux premières composantes de Fourier du potentiel. La reconstruction de ce dernier dans l'espace direct nous permet ensuite de calculer la densité d'états locale que nous comparons aux mesures de conductance STS. La seconde partie est consacrée à l'étude de la croissance et des propriétés électroniques des molécules de 1,4-dibromobenzène (DBB) et 1,4-diiodobenzène (DIB) évaporées sur Cu(110). Leur dépôt à température ambiante sur la surface entraîne la déshalogénation des molécules et la formation de phases organométalliques. A 200°C, le système polymérise pour former des chaînes unidimensionnelles de poly(p-phénylène) parfaitement alignées. Les mesures ARPES révèlent l'existence d'une bande pi unidimensionnelle d'états HOMOs dispersant sous le niveau de Fermi. En STS, nous observons également, pour des petites chaînes, le confinement des états LUMOs dans la partie inoccupée du spectre. Le déconfinement de ces états pour les grandes chaînes conduit à la formation d'une bande continue croisant le niveau de Fermi, conférant au polymère un caractère métallique 1D. Le gap HOMO-LUMO est alors mesuré à 1.15 eV
In this work, through two different studies, we demonstrate the fundamental interest in the coupling of angle resolved photoemission (ARPES) and scanning tunneling spectroscopy (STS) to investigate the electronic properties of nanostructured interfaces. In the first part we present a methodology to determine the surface potential of the triangular reconstructed one monolayer of Ag/Cu(111) interface from ARPES. This method is based on the measurement of the Shockley state band structure’s gaps at the high symmetry points of the Brillouin zone. Deposition of potassium adatoms allows us to shift the surface state towards higher binding energies in order to increase the number of accessible gaps in photoemission. From the magnitude of these gaps we deduce the two first Fourier components of the potential felt by electrons using the nearly free electron model. Then we reconstruct it and calculate the local density of states in order to compare it with the conductance maps probed by STS. In the second part we report the study of the growth and the electronic properties of the two molecules 1,4-dibromobenzene (DBB) and 1,4-diiodobenzene (DIB) evaporated on Cu(110). For room temperature deposition, we first observe their deshalogenation and the formation of an intermediate organometallic phase. Then, above 200°C, the system polymerizes into a long-range ordered array of one dimensional poly(p-phenylene) polymer. ARPES intensity maps allowed us to identify a one dimensional graphene-like strongly dispersive pi-band below the Fermi energy. By STS we also observed LUMOs confined states for small chains over the Fermi level. The loss of confinement for long chains induces the formation of a continuous dispersive band which crosses the Fermi energy, conferring a 1D metallic character to the polymer. The HOMO-LUMO gap is found to be 1.15 eV

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Jabůrek, Ladislav. "Metoda napěťového kontrastu při detekci sekundárních elektronů scintilačním detektorem ve VP SEM." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2011. http://www.nusl.cz/ntk/nusl-219045.

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This thesis deals with scanning electron microscope working at higher pressure in the specimen chamber. The main goal was to study the voltage contrast on the PN junction of the transistor under suitable working conditions for using environmental scanning microscope. The observation of sample was enabled by a scintillation detector designed for observation of high pressure.

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Iancu, Violeta. "Single Molecule Switches and Molecular Self-Assembly: Low Temperature STM Investigations and Manipulations." Ohio : Ohio University, 2006. http://www.ohiolink.edu/etd/view.cgi?ohiou1159980375.

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Alam, Khan. "Growth, Structural, Electronic, and Magnetic Characterization of GaN, CrN, Fe Islands on CrN, and Fe/CrN Bilayer Thin Films." Ohio University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1478024656083129.

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47

Liu, Shuhao. "Electronic Transport in Functional Materials and Two-Dimensional Hole System." Case Western Reserve University School of Graduate Studies / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=case1522893320666086.

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48

Vykydal, Václav. "Radiační poškození vzorků v nízkovoltové transmisní elektronové mikroskopii." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2019. http://www.nusl.cz/ntk/nusl-400992.

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This thesis is focused on Radiation damage of samples in low-voltage transmission electron microscopy. In thesis is general description of transmission electron microscopy and their important parts. There is described how samples are damaged by primary electron beam and how samples for transmission electron microscopy are prepared and which degradation occurs from the point of view materials of sample and time dose of electrons from primary electron beam.

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Benia, Hadj Mohamed. "Spatially resolved optical measurements on supported metal particles and oxide surfaces with the STM." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2008. http://dx.doi.org/10.18452/15862.

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In der vorliegenden Arbeit wurde mit Hilfe eines Photon-STM die Korrelation zwischen optischen Eigenschaften und der lokalen Morphologie an zwei unterschiedlichen Systemen untersucht. Hierfür wurden zum einem oxidgetragene Ensemble von Silber-Partikeln präpariert, wobei sowohl die Partikelform (Kuppel- und Scheibenform) als auch die deponierte Partikeldichte variiert werden konnte. Neben der Präparation solcher Partikel auf Al10O13/NiAl, konnten sphärische Silber-Kolloide geordnet, als auch ungeordnet auf HOPG aufgebracht und untersucht werden. Dabei zeigte sich, dass das Verhältnis von Höhen zu Breiten nicht nur einen signifikanten Einfluss auf die Mie-Resonanz des einzelnen Partikels hat, sondern auch die elektromagnetische Kopplung der Partikel in einem Ensemble stark kontrolliert. Die energetische Lage der Mie-Resonanz zeigt im Fall der kuppelförmigen Ag-Partikel eine starke Abhängigkeit vom Intepartikel-Abstand, was sich in einer Verschiebung zu höheren Energien für eine steigende Partikeldichte äußert. Eine solche Abhängigkeit konnte bei den Ensembles der scheibenförmigen Partikel nicht beobachtet werden. Des weiteren zeigte sich, dass, verglichen mit den ungeordneten Ensembles, die selbstorganisierte langreichweitige Ordnung der Silber-Kolloide auf HOPG nur einen schwachen Einfluss auf die energetische Position der Mie Resonanz hat.Das zweite hier untersuchte System sind dünne MgO Filme unterschiedlicher Dicken auf einem Mo(001) Substrat. Diese zeigen ein reichhaltiges Wachstumsverhalten, welches durch eine Differenz in den Gitterkonstanten von 5.3% begründet ist und erst ab etwa 25 ML zu einem flachen und defektarmen Film führt. Die so induzierte Spannung relaxiert bis zu einer Dicke von etwa 7 ML in einer periodischen Überstruktur die aus abwechselnd flachen und verkippten Ebenen an der MgO-Mo Grenzschicht hervorgeht. Für MgO Filme mit einer Dicke von etwa 12 ML werden dann Schraubenversetzungen, ausgedehnte verkippte Ebenen und Stufenkanten mit einer Orientierung entlang der Richtung beobachtet. Die optische Charakterisierung durch Feldemission von Elektronen aus der STM-Spitze in den MgO-Film wird dominiert von zwei Emissionsmaxima bei Energien von 3.1 eV und 4.4 eV. Die kontrollierte Nukleation von Gold Partikeln und die Erzeugung von Farbzentren im MgO Film erlaubten eine Zuordnung dieser Emissionen zu strahlenden Zerfällen von Exitonen an Ecken, Kinken bzw. Stufen des Magnesiumoxids. Solche Emissionsprozesse konnten allerdings nur unter Einstellungen beobachtet werden, bei denen ein gleichzeitiges Rastern der Oberfläche unmöglich ist. Bei moderaten Einstellungen war auch eine ortsaufgelösten Spektroskopie möglich, wobei dann neue Emissionsmechanismen beobachtet wurden. Dabei sind zwei Prozesse wesentlich; zum einen die Ausbildung von sog. Spitzen-induzierten Plasmonen im Bereich zwischen Spitze und dem Mo-Substrat, zum anderen strahlende Elektronenübergänge zwischen sog. Feldemissionsresonanzen, die sich im Spitze/MgO-Film System ausbilden.
In this thesis, the correlation between the optical properties and the local morphology of supported silver nanoparticle ensembles and MgO thin films deposited on Mo(001) systems is explored by means of Photon-STM. In the first section, dome and disk shaped Ag nanoparticle ensembles with increasing density on an alumina film on NiAl(110) were analyzed as well as ordered and disordered ensembles of Ag nanocolloids on HOPG. The aspect ratio of the Ag nanoparticles was found to have a significant influence not only on the Mie plasmon resonance of a single particle, but also on the electromagnetic coupling within the nanoparticle ensembles. The Mie resonance in the ensemble of dome shaped Ag nanoparticles shows a strong dependence on the interparticle distance, where it shifts to higher energies with increasing particle density, due to destructive interference effects. In the disk-like Ag ensembles, however, the plasmon energy is independent of particle-particle separation. The long-range lateral ordering of size-selected Ag nanocolloids is found to induce a high dipole-dipole coupling within the ensemble. This is mainly reflected by the enhancement of the spectral intensity of the in-plane Mie mode, due to constructive coupling. However, ensembles with either well-ordered or disordered arrangements reveal no important difference in their optical properties, reflecting the weak influence of the long-range order in the particle ensemble. Thin MgO films with different thicknesses were grown on a Mo(001) surface. The stress resulting from the 5.3% lattice mismatch between the MgO(001) and the Mo(001) lattice parameters is found to control the surface morphology of the MgO film until thicknesses of around 25ML at which flat and defect-poor films are obtained. The relaxation of the stress induces a periodic network in the first 7ML of the MgO film, consisting of alternated flat and tilted mosaics. The presence of screw dislocations, steps oriented along the MgO directions, and tilted planes is observed when the MgO films are approximately 12ML thick. In addition, an increase of the MgO work function around these new surface features is revealed from STM spectroscopy. The photon emission induced by field-emitted electron injection from the STM tip into the MgO films is dominated by two emission bands located at 3.1eV and 4.4eV. To check the origin of these bands, further experiments, namely, nucleation of Au particles and creation of F-centers on the MgO surface, have been performed. The nucleation of Au particles at the low coordinated sites is found to quench the MgO optical signal, while the creation or annihilation of F-centers does not alter the MgO emission bands. The 3.1eV and the 4.4eV bands are therefore assigned to the radiative decay of MgO excitons at corner and kink sites, and step sites, respectively. Besides, spatially resolved optical measurements in the tunneling mode of the STM revealed different light emission mechanisms. These radiative processes are mainly related to tip-induced plasmons that form between the tip and the Mo support and to electron transitions between field-emission-resonance states in the STM tip-MgO film junction. The signal from exciton decays at corners and kinks of the MgO surface is however only observed at excitation conditions where the spatial resolution is already strongly reduced.

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Petráš, Roman. "Únavová odolnost a mechanizmy únavového poškození v materiálech pro vysoké teploty." Doctoral thesis, Vysoké učení technické v Brně. CEITEC VUT, 2021. http://www.nusl.cz/ntk/nusl-433631.

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Superaustenitická korozivzdorná ocel typu 22Cr25NiWCoCu určená pro vysokoteplotní aplikace v energetickém průmyslu byla studována za podmínek nízkocyklové únavy při pokojové a zvýšené teplotě. Jednotlivé vzorky byly podrobeny různým zátěžným procedurám, což umožnilo studium materiálové odezvy spolu s mechanismem poškození. Křivky cyklického zpevnění/změkčení, cyklického napětí a Coffin-Mansonovy křivky byly vyhodnoceny. Únavová životnost materiálu byla diskutována s ohledem na uplatňované mechanismy poškození, které se vyvinuly za specifických zátěžných podmínek. Standardní izotermální únavové experimenty byly provedeny při pokojové a zvýšené teplotě. Hysterezní smyčky zaznamenané během cyklického zatěžování byly analyzovány pomocí zobecněné statistické teorie hysterezní smyčky. Pro různé amplitudy napětí byla určena jak distribuce hustoty pravděpodobnosti interních kritických napětí (dále PDF), tak rovněž zjištěn její vývoj během cyklického namáhání. Zjištěné průběhy PDF byly korelovány s vývojem povrchového reliéfu a vnitřního dislokačního uspořádání zdokumentované pro obě teploty pomocí rastrovací elektronové mikroskopie (SEM) vybavené technikou fokusovaného iontového svazku (FIB), která umožnila rovněž efektivní studium nukleace povrchových únavových trhlin. Při cyklickém zatížení při pokojové teplotě byla pozorována lokalizace cyklické plastické deformace do perzistentních skluzových pásů (PSP). V místech, kde tyto PSP vystupují na povrch materiálu byly pozorovány perzistentní skluzové stopy (PSS) tvořené extruzemi a intruzemi. Postupné prohlubování intruzí, zejména na čele nejhlubší intruze, vede k iniciaci únavové trhliny. Odlišný mechanismus tvorby trhlin byl zjištěn při únavové zkoušce při zvýšené teplotě, kde zásadní roli hrál vliv prostředí. Rychlá oxidace hranic zrn a jejich následné popraskání představuje dominantní mechanismus v I. stádiu nukleace trhlin. Aplikace desetiminutové prodlevy v tahové části zátěžného cyklu vedlo k vývoji vnitřního (kavitačního) poškozování. Mechanismy vnitřního poškozování byly studovány na podélných řezech rovnoběžných s napěťovou osou zkušebních vzorků. Trhliny a jejich vztah k hranicím zrn a dvojčat byly studovány pomocí difrakce zpětně odražených elektronů (EBSD). Vliv prodlevy na únavovou životnost byl korelován s vývojem povrchového reliéfu a vnitřního poškození. Vzorky z uvedené oceli byly rovněž podrobeny zkouškám termomechanické únavy (TMF), při nichž se v čase mění jak zátěžná síla tak i teplota. Termomechanické únavové zkoušky v režimu soufázném (in-phase) a protifázném (out-of-phase) byly provedeny jak s prodlevou, tak i bez ní. Ve všech případech bylo pozorováno rychlé cyklické zpevnění bez ohledu na použitou amplitudu deformace, u vzorků testovaných v out-of-phase režimu byla zjištěna tendence k saturaci. Zkoumáním povrchového reliéfu za pomocí technik SEM a FIB byla odhalena přednostní oxidace hranic zrn a následné praskání těchto hranic kolmo k ose zatížení. Prodlevy v cyklech při maximálním napětí vedly ke zvýšení amplitudy plastické deformace a následně ke creepovému poškození ve formě vnitřních kavit a trhlin. Interkrystalické šíření trhlin bylo pozorováno na vzorcích testovaných v režimu in-phase. Vývoj poškození v režimu out-of-phase nebyl principiálně ovlivněn zařazením prodlevy do zátěžného cyklu. Charakteristickým znakem namáhání v režimu out-of-phase je nukleace několika trhlin v homogenní oxidické vrstvě jdoucích napříč zrny kolmo k ose zatěžování.

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Dissertations / Theses on the topic 'Low-voltage scanning electron microscopy'

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