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Journal articles on the topic 'Low workfunction metal'

Author: Grafiati

Published: 3 June 2025

Last updated: 31 July 2025

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1

Labed, Madani, Nouredine Sengouga та You Seung Rim. "Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer". Nanomaterials 12, № 5 (2022): 827. http://dx.doi.org/10.3390/nano12050827.

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Controlling the Schottky barrier height (ϕB) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β-Ga2O3 semiconductor was investigated using numerical simulation. We confirmed that the simulation-based on Ni workfunction, interfacial trap concentration, and surface electron affinity was well-matched with the actual device characterization. Insertion of the graphene layer achieved a remarkable decrease in the barrier height (ϕB), from 1.32 to 0.43 eV, an

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2

Soni, Deepak, Amit Kumar Behera, Dheeraj Sharma, Dip Prakash Samajdar, and Dharmendra Singh Yadav. "Structural Modification of Doped Tunnel Field Effect Transistor for Enhanced Conduction Current and Lower Subthreshold Swing." Journal of Nanoelectronics and Optoelectronics 14, no. 11 (2019): 1539–47. http://dx.doi.org/10.1166/jno.2019.2665.

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The material solubility in the source region and abrupt source/channel junction profile are the major concern which is responsible for the improvement of the electrical characteristics of conventional physical doped tunnel field effect transistor (PD-TFET). For this, an additional negatively polarised electrode is mounted in P+ (source) – N (channel) – N+ (drain) structure over the source region to overcome material solubility. This improves the electrical characteristics of the device. Along with this, we have implanted a low workfunction metal layer (ML) in the oxide layer under the gate ele

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3

Kumar, Pushpendra, Florian Domengie, Charles Leroux, Patrice Gergaud, and G. Ghibaudo. "Impact of CMOS TiN metal gate process on microstructure and its correlation with electrical properties." MRS Advances 4, no. 27 (2019): 1565–71. http://dx.doi.org/10.1557/adv.2019.77.

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ABSTRACTIn this paper, the effect of TiN metal gate deposition conditions on the crystal orientation and size of TiN grains has been investigated. We have focused on process conditions that reduce the grain size or provide a unique orientation, which might impact CMOS threshold voltage variability. We have shown that the grain size can be significantly modulated by the RF power and pressure, with grain size as low as 5.2 nm. Further it has been shown that for a few optimized conditions, a unique grain orientation can be obtained. Then, the impact of these process conditions on TiN gate mechani

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4

Oh, Yong-Ho, and Young-Min Kim. "Gate Workfunction Optimization of a 32 nm Metal Gate MOSFET for Low Power Applications." Journal of Electrical Engineering and Technology 1, no. 2 (2006): 237–40. http://dx.doi.org/10.5370/jeet.2006.1.2.237.

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5

Pan, James, Shamima Afroz, Scott Suko, James D. Oliver, and Thomas Knight. "High Workfunction, Compound Gate Metal Engineering for Low DIBL, High Gain, High Density Advanced RF Power Static Induction Transistor (SIT) and HV Schottky Diode in 4H Silicon Carbide." Materials Science Forum 924 (June 2018): 641–44. http://dx.doi.org/10.4028/www.scientific.net/msf.924.641.

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Wide bandgap semiconductors, such as 4H SiC, are suitable for power regulating devices, due to compatibility with conventional process integration, high breakdown voltage and thermal conductivity [1]. For RF applications, in order to achieve better switching speed, high cut off frequency, and low series resistance (Rdson), it is essential to choose the right gate metals [2]. Engineering of the gate metals not only improves the critical device parameters by adjustment of the metal workfunction, but also affects how the high aspect ratio trenches are filled for a next generation SIT device confi

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6

Kim, Mansu, Geun-Chae Yu, and Young Chul Kim. "Effects of Low Workfunction Metal Acetate Layers on the Electroluminescent Characteristics of Organic Light-Emitting Diodes." Korean Chemical Engineering Research 51, no. 5 (2013): 634–39. http://dx.doi.org/10.9713/kcer.2013.51.5.634.

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7

Yoon, Young Jun, Hye Rim Eun, Jae Hwa Seo, et al. "Short-Channel Tunneling Field-Effect Transistor with Drain-Overlap and Dual-Metal Gate Structure for Low-Power and High-Speed Operations." Journal of Nanoscience and Nanotechnology 15, no. 10 (2015): 7430–35. http://dx.doi.org/10.1166/jnn.2015.11146.

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We have investigated and proposed a highly scaled tunneling field-effect transistor (TFET) based on Ge/GaAs heterojunction with a drain overlap to suppress drain-induced barrier thinning (DIBT) and improve low-power (LP) performance. The highly scaled TFET with a drain overlap achieves lower leakage tunneling current because of the decrease in tunneling events between the source and drain, whereas a typical short-channel TFET suffers from a great deal of tunneling leakage current due to the DIBT at the off-state. However, the drain overlap inevitably increases the gate-to-drain capacitance (Cg

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8

Pan, J., A. Gaibrois, M. Marripelly, et al. "Effects of Very High Workfunction Metals or Metal Alloys (NiCr) on High Switching Speed, HV Schottky Diodes for Mixed Signal or RF ASIC." MRS Advances 5, no. 37-38 (2020): 1937–46. http://dx.doi.org/10.1557/adv.2020.336.

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AbstractFor high switching speed HV Schottky diodes, with very high work function metal and extremely lightly doped epi, the built-in potential may be too high for thermionic emission to occur, when the applied external voltage is quite low (near VF = 0.07V). If the epi is lightly doped p type, the built-in potential (VBuilt-in: potential difference between the metal and silicon Fermi levels) is 1.0V (measured with CV). If the external bias is 0.1V, near the measured VF, it is not enough to overcome the built-in potential for thermionic emission as illustrated. It is likely that in addition to

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9

Park, Seung-Kyu, Jonghyuk Lee, Ran Hee Kim, et al. "Effects on Addition of Metal Oxides with Low Workfunctions on the Ca-Sr-Ba Oxide Cathodes for VUV Ionizers." Korean Journal of Materials Research 29, no. 4 (2019): 241–51. http://dx.doi.org/10.3740/mrsk.2019.29.4.241.

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10

Tao, Meng. "Valence-Mending Passivation of Si(100) Surface: Principle, Practice and Application." Solid State Phenomena 242 (October 2015): 51–60. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.51.

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Surface states have hindered and degraded many semiconductor devices since the Bardeen era. Surface states originate from dangling bonds on the surface. This paper discusses a generic solution to surface states, i.e. valence-mending passivation. For the Si (100) surface, a single atomic layer of valence-mending sulfur, selenium or tellurium can terminate ~99% of the dangling bonds, while group VII fluorine or chlorine can terminate the remaining 1%. Valence-mending passivation of Si (100) has been demonstrated using CVD, MBE and solution passivation. The keys to valence-mending passivation inc

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11

Koch, Norbert, Egbert Zojer, Aparna Rajagopal, et al. "A New Alternative for the Low-Workfunction Electrode in Organic Devices." MRS Proceedings 598 (1999). http://dx.doi.org/10.1557/proc-598-bb11.12.

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ABSTRACTThe application of ele ctroactive organic materials in devices (light emitting diodes, photovoltaic cells) often requires electrodes with a low workfunction. Commonly, aluminum or alkaline earth metals are used, which usually exhibit strong interaction with the organic material, such as the formation of new covalent bonds or doping. This results in a strong modification of the electronic structure of the organic/metal interface, and in most cases does not yield the energy level alignment expected for the unreacted interface. As a n alternative to the above-mentioned metals we propose t

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12

Scharber, M. C., C. J. Brabec, F. Padinger, and N. S. Sariciftci. "Quenching of the Magnetic Field Effect on the Photocurrent and Photocurrent Detected Magnetic Resonance in Conjugated Polymer-Fullerene Diodes." MRS Proceedings 598 (1999). http://dx.doi.org/10.1557/proc-598-bb3.29.

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ABSTRACTWe have studied the effect of a magnetic field on the photocurrent of MDMO-PPV (poly(2-methoxy,5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene) and MDMOPPV/fullerene diodes (plastic solar cells) and performed photocurrent detected magnetic resonance (PCDMR) experiments on these devices consisting of an active layer sandwiched between a low and a high workfunction metal electrode. Results clearly show that the magnetic field effect (MFE) on the photocuttent as well as PCDMR signals are quenched in conjugated polymer/fullerene composite devices in contrast to large signals observed in t

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13

Koch, N., J. Ghijsen, R. Ruiz, et al. "Interaction and Energy Level Alignment at Interfaces between Pentacene and Low Work Function Metals." MRS Proceedings 708 (2001). http://dx.doi.org/10.1557/proc-708-bb2.4.

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ABSTRACTA number of low workfunction metals (samarium, alkali metals) were deposited onto vacuum sublimed thin films of pentacene. The change in the valence electronic structure of the organic material was studied by in situ ultraviolet photoemission spectroscopy (UPS). Alkali metal intercalation leads to the appearance of a new photoemission feature within the pentacene energy gap, due to a charge transfer from the alkali atoms to the lowest unoccupied molecular orbital (LUMO) of the organic material. The energy spacing between this emission feature and the relaxed highest occupied molecular

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14

Cho, Jinyoun, Maarten Debucquoy, Payo Maria Recaman, et al. "Contact resistivity reduction on lowly-doped n-type Si using a low workfunction metal and a thin TiOx interfacial layer for doping-free Si solar cells." September 21, 2017. https://doi.org/10.1016/j.egypro.2017.09.356.

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Eliminating a doping process could be an effective way to reduce the production cost of c-Si cells. However, in absence of highly doped Si, the formation of a high quality contact is not straightforward. The lack of field-effect passivation from a lowly doped region can lead to a high recombination current density at the contacts (J<sub>0,metal</sub>) and moreover, contact resistivity (ρ<sub>C</sub>) typically increases when doping level is decreasing. In this work we focus on reducing the contact resistivity of an electron-selective contact for doping-free cells. Although the effect of low wo

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15

Datas, Alejandro, and Rodolphe Vaillon. "Thermionic-enhanced near-field thermophotovoltaics for medium-grade heat sources." April 2, 2019. https://doi.org/10.1063/1.5078602.

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Conversion of medium-grade heat (temperature from 500 to 1000 K) into electricity is important in applications such as waste heat recovery or power generation in solar thermal and co-generation systems. At such temperatures, current solid-state devices lack either high conversion efficiency (thermoelectrics) or high-power density capacity (thermophotovoltaics and thermionics). Near-field thermophotovoltaics (nTPV) theoretically enables high-power density and conversion efficiency by exploiting the enhancement of thermal radiation between a hot emitter and a photovoltaic cell separated b

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