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Dissertations / Theses on the topic 'Magnesium doped zinc oxide'

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Published: 4 June 2021
Last updated: 1 February 2022

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1

Bittau, Francesco. "Analysis and optimisation of window layers for thin film CDTE solar cells." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/32642.

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The work presented in this thesis focuses on the investigation and improvement of the window stack of layers for thin film CdTe solar cells fabricated in the Center for Renewable Energy Systems Technology (CREST) laboratories. In particular the aim was to change the standard structure including TCO, high resistive transparent (HRT)layer and CdS which is limited by the low transparency of the CdS layer, to a better performing one. The first result chapter of the thesis describes the study of ZnO HRT layers. ZnO thin films were deposited by radio frequency (RF) magnetron sputtering with differen
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2

Li, Sonny X. "Nitrogen doped zinc oxide thin film." Berkeley, Calif. : Oak Ridge, Tenn. : Lawrence Berkeley National Laboratory ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2003. http://www.osti.gov/servlets/purl/821916-VLVAK9/native/.

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Thesis (M.S.); Submitted to the University of California, Berkeley, 210 Hearst Mining Memorial Bldg., Berkeley, CA 94720 (US); 15 Dec 2003.<br>Published through the Information Bridge: DOE Scientific and Technical Information. "LBNL--54116" Li, Sonny X. USDOE Director. Office of Science. Basic Energy Sciences (US) 12/15/2003. Report is also available in paper and microfiche from NTIS.
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3

Hlaing, Oo Win Maw. "Infrared spectroscopy of zinc oxide and magnesium nanostructures." Online access for everyone, 2007. http://www.dissertations.wsu.edu/Dissertations/Fall2007/w_hlaingoo_121107.pdf.

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4

Williams, Charles D. H. "Some magnetic effects of clustering in iron doped magnesium oxide." Thesis, Durham University, 1987. http://etheses.dur.ac.uk/6606/.

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The growth of a magnesioferrite precipitate in iron doped (˜lOOOOppm wt.) magnesium oxide crystals, heat treated at 973K in oxygen, is studied with torque, magnetisation and magnetic resonance measurements. The torque and magnetisation results are in agreement with a model which assumes that the precipitate grows by diffusion limited Ostwald ripening.The effects of the particle size distribution and cubic magnetocrystalline anisotropy of the orientated octahedral precipitate particles on the magnetisation and torque curves are calculated. A magnetometrie demagnetisation tensor is defined for a
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5

Thapa, Sunil. "Defects and Ferromagnetism in Transition Metal Doped Zinc Oxide." Bowling Green State University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1467319340.

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6

Patel, Bhavnesh. "Photoluminescence and kinetics of zinc oxide doped with rare earths." Ohio : Ohio University, 1998. http://www.ohiolink.edu/etd/view.cgi?ohiou1176402695.

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7

Xu, Amei. "Luminescence properties of Zinc oxide doped with rare earth ions." Ohio University / OhioLINK, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1174408190.

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8

Pradel, Ken Charles. "Antimony doped p-type zinc oxide for piezotronics and optoelectronics." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/54386.

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Zinc oxide is a semiconducting material that has received lot of attention due to its numerous proeprties such as wide direct band gap, piezoelectricity, and numerous low cost and robust methods of synthesizing nanomaterials. Its piezoelectric properties have been harnessed for use in energy production through nanogenerators, and to tune carrier transport, birthing a field known as piezotronics. However, one weakness of ZnO is that it is notoriously difficult to dope p-type. Antimony was investigated as a p-type dopant for ZnO, and found to have a stability of up to 3 years, which is completel
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9

Bernard, Sheldon Ainsworth. "Influence of silicon dioxide, magnesium oxide and zinc oxide on resorbable tricalcium phosphate based bioceramics." Online access for everyone, 2005. http://www.dissertations.wsu.edu/Thesis/Fall2005/s%5Fbernard%5F083005.pdf.

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10

Shantheyanda, Bojanna P. "Characterization of aluminum doped zinc oxide thin films for photovoltaic applications." Master's thesis, University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4538.

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Growing demand for clean source of energy in the recent years has increased the manufacture of solar cells for converting sun energy directly into electricity. Research has been carried out around the world to make a cheaper and more efficient solar cell technology by employing new architectural designs and developing new materials to serve as light absorbers and charge carriers. Aluminum doped Zinc Oxide thin film, a Transparent conductive Oxides (TCO) is used as a window material in the solar cell these days. Its increased stability in the reduced ambient, less expensive and more abundance m
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11

Herodotou, Stephania. "Zirconium doped zinc oxide thin films deposited by atomic layer deposition." Thesis, University of Liverpool, 2015. http://livrepository.liverpool.ac.uk/2013045/.

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Doped zinc oxide is of interest as a transparent conductive oxide (TCO), due to the abundance of its major constituents, its low resistivity, high transparency and wide bandgap. The current work focuses on the properties required for TCO applications including resistivity of ≤10-3 Ω•cm, carrier density of ≥1020 cm-3, and transparency >80% in the visible light. Zirconium (Zr4+) was chosen as the dopant in the current work due to its abundance, comparable ionic size to Zn and because it can act as a double donor providing up to two extra free electrons per ion when substituted for Zn2+. The dopi
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12

Dangbegnon, Julien Kouadio. "Photoluminescence study of ZnO doped with nitrogen and arsenic." Thesis, Nelson Mandela Metropolitan University, 2010. http://hdl.handle.net/10948/1216.

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In this work, the optical properties of ZnO doped with arsenic and nitrogen were studied. The ZnO samples were grown by Metalorganic Chemical Vapor Deposition (MOCVD). The solubility of nitrogen in the ZnO films, as well as its activation upon annealing, was also investigated. Hydrogen is known as a major source for passivation of the acceptors in ZnO:N. Therefore, it is crucial to dissociate the complex(es) formed by nitrogen and hydrogen and diffuse out the hydrogen in order to prevent the reformation of such complexes. High temperatures (≥ 600 C) are required for these purposes. In order to
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13

Ross, Ian Mark. "Structural development and physical characterisation of undoped and doped zinc oxide powders." Thesis, University of Liverpool, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.366428.

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14

Allard, Garvin Richard Johan. "Synthesis and characterization of zinc-doped magnetic nanoparticles for diagnostic studies." University of the Western Cape, 2015. http://hdl.handle.net/11394/4815.

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Magister Scientiae - MSc<br>In the present study we report the synthesis and characterization of iron oxide magnetic nanoparticles doped with zinc in an attempt to enhance the magnetic properties. The nanoparticles were prepared via the co-precipitation route and capped with 3-phosphonopropionic acid (3-PPA). The amount of zinc dopant was varied to yield nanoparticles with the general formula ZnxFe3-xO4 (x=0, 0.1, 0.2, 0.3, 0.4). Characterization was carried out using high resolution transmission electron microscopy (HRTEM), X-ray diffraction spectroscopy (XRD), energy-dispersive X-ray spectro
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15

Tuan, Allan C. "Epitaxial growth and characterization of cobalt-doped zinc oxide and cobalt-doped titanium dioxide for spintronic applications /." Thesis, Connect to this title online; UW restricted, 2003. http://hdl.handle.net/1773/9878.

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16

Deng, Yuanyuan, and 邓远源. "Magnetic circular dichroism and Hall measurement of cobalt-doped zinc oxide thin films." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2012. http://hub.hku.hk/bib/B50434494.

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The observation of ferromagnetism of (Ga,Mn)As by Ohno in 1998 has inspired great interest in diluted magnetic semiconductors (DMS). DMS’s features combining ferromagnetism and semiconducting make them of great potential for conceptual spintronic devices, which is a promising field of research for the emerging electronics. The practical application of DMS requires a Curie temperature well above room temperature and an intrinsic ferromagnetism. There are several types of DMS materials. The typical ones are transition-metal (TM) doped GaAs, GaN and ZnO. The TM-doped ZnO has drawn particular att
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17

Lo, Yu Hsin, and 羅煜欣. "Preparation and Applications of RF-Sputtered Transparent Conductive Thin Films of Aluminum-doped Magnesium Zinc Oxide." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/95050505582488352997.

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碩士<br>長庚大學<br>化工與材料工程學系<br>99<br>The objectives of this research are to preare the ceramic targets of aluminum-doped magnesium zinc oxid (AMZO) by solid-state reactions and the thin films of AMZO by RF magnetron sputtering. In addition, the effects of the amount of alumina and magnesium dopant in the AMZO targets as well as other sputtering parameters on the electrical, optical, and structural properties of AMZO thin films was also investigated. Finally, AMZO thin film would be applied for CIGS solar cell. In the result, the Zn0.94Mg0.06O with 1 wt% Al2O3 at different sintering temperature
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18

Jou, Jia Chiuan, and 周家全. "Preparation and Applications of RF-Sputtered Transparent Conductive Thin Films of Gallium-doped Magnesium Zinc Oxide." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/63310618514172458451.

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碩士<br>長庚大學<br>化工與材料工程學系<br>100<br>The preparation of transparent conductive gallium-doped magnesium zinc oxide (GMZO) thin films with good near infrared transmission by radio frequency (RF) magnetron sputtering using a single GMZO ceramic target was explored In addition, the different of GMZO target conditions on the structural, electrical and optical properties on the RF-sputtered GMZO thin films was also investigated and sputtering processes prepared optimization GMZO transparent conductive film application in the CIGS solar cells. Then, the window on the component layer (buffer layer / intr
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19

Arndt, Sebastian [Verfasser]. "Stability of lithium doped magnesium oxide and zinc oxide catalysts for the conversion of natural gas / vorgelegt von Sebastian Arndt." 2010. http://d-nb.info/1011021870/34.

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20

Cheng, Hung-Che, and 鄭宏哲. "Properties Exhibited by One-Dimensional Nanostructured Zinc Oxide and Indium Doped Zinc Oxide." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/73327493492902520194.

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碩士<br>逢甲大學<br>電子工程所<br>100<br>This thesis is to study nano thin film as a seed layer by using the sol-gel method to have the properties exhibited of one dimensional nanostructured zinc oxide by hydrothermal process. The temperature, concentration and time for the nanostructured materials are very important parameter for the properties of optical, electrical, surface structure, and the lattice growth. In this study, one dimensional nanostructured zinc oxide can be investigated for the systematic comparison by different concentrations, and temperatures, and do the experimental comparison for the
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21

Liu, Ta-Min, and 劉大閔. "Lithium Doped Zinc Oxide Nanorod-BasedOptoelectronic Devices." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/mdt69y.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>103<br>In this study，Zinc oxide nanorods homogeneous production Optoelectronic Devices To research topics，the lithium doped zinc oxide nanorods arrays were synthesized on glass substrate by using the hydrothermal method. Production of P-type zinc oxide nanorods array films before stacking N-type zinc oxide nanorods，Forming a P-N junction Optoelectronics, reducing the lattice mismatch. The main research can be divided into two parts: First , Using RF magnetron sputtering machine on glass substrate by sputtering a layer of aluminum zinc oxide thin film as a seed l
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22

Xie, Yi-tun, and 謝宜暾. "Physical Properties of the Cu-doped and Ni-doped zinc oxide." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/41237046883903494809.

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碩士<br>國立臺南大學<br>材料科學系自然科學教育碩士班<br>94<br>Because the require for the optics component with short-wavelength and the electronic devices with high-energy and high frequency increases, it make the wide band gap semiconductor material have been widely studied in recent years. Zinc oxide belogning to wide band gap (3.4eV) semicondutor has not been paid attention to its application in the wide bad gap properties in stead of application in polycrystal. Recently zinc oxide become more important application in its wide band gap due to its good transparent properties. Pure zinc oxide has no phase transit
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23

Weng, Huan-chung, and 翁煥忠. "Phase transition of the Mn-doped and Co-doped zinc oxide." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/52587841640794165762.

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碩士<br>國立臺南大學<br>自然科學教育學系碩士班<br>92<br>ABSTRACT Because the optics component with short-wavelength and the electronic element demands of high-energy , high frequency increase in recent years, which make wide band gap semiconductor extensive study and application . Zinc oxide belong to wide band gap (3.4 eV ) too, because its wide band gap, transparent and fabrication improve, Zinc oxide is also cause the agitation of studying gradually. Zinc oxide the most interesting place of pure zinc oxide has no phase transition , but it has phase transition (mostly in the adjacent place of the room tempera
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24

lo, Chih-neng, and 羅智能. "Fabrication and Characterization of Electrochemical Deposition Zinc Oxide and Indium Doped Zinc Oxide Thin Films." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/68323977972125371801.

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碩士<br>逢甲大學<br>資訊電機工程碩士在職專班<br>99<br>In this thesis, the zinc oxide (ZnO) thin films was fabricated form zinc films deposited on ITO/glass substrates by electrodeposition technique. The zinc thin film is electrodepositioned by using an aqueous solution of 0.1 M Zn(NO3)2 and 0.1 M H3BO3 with a pH value approximately 4.1. The ZnO thin films were annealed in air for the temperatures form 300 to 500 ℃.The effect of annealing on the structure and morphology of thin film are studied. X-ray diffraction patterns showed that the annealing at 500 ℃ can convert these films to ZnO. Zinc oxide (ZnO) thin fi
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25

Luo, Wei-Hsiang, and 駱煒翔. "Preparation and Properties of the Zinc Oxide andManganese-Doped Zinc Oxide by Chemical Bath Deposition." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/us6528.

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碩士<br>國立虎尾科技大學<br>材料科學與綠色能源工程研究所<br>97<br>The first part of this study is to discuss the properties of CBD-prepared zinc oxide films. The second part is to elucidate the properties of manganese-doped zinc oxide prepared by an optimum deposition parameter. Zinc oxide thin films with low resistivity and high transparency were prepared on cleaned Corning Eagle2000 glass substrates by chemical bath deposition (CBD); and the effects of deposition parameters on the structural, electrical and optical properties of the films were investigated. The changes in structure, resistivity, and transmittance
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26

Hsiao, Wei-Chih, and 蕭偉志. "Ti-doped Zinc Tin Oxide Thin Film Transistor." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/06620977321865715282.

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碩士<br>國立中正大學<br>光機電整合工程所<br>98<br>In this thesis, we use titanium doped zinc tin oxide (Ti-doped ZTO) transparent thin film as a semiconductor layer to fabricated thin film transistors. To preparing Ti-doped ZTO target to controlled TiO2 content, and used pulsed laser deposition (PLD) system to growth Ti-doped ZTO thin films on silica/silicon (SiO2/Si) substrate by controlling laser pulse energy, laser repetition rate, and O2 gas flow. We fabricated bottom gate thin film transistors for Ti-doped ZTO thin film as channel material and measured the I-V characteristics. To compared different TiO2
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27

Chang, Huang-ming, and 張晃銘. "Photocatalytic Study of Annealed Bismuth Doped Zinc Oxide." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/6h652h.

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28

TING, YU-HSUAN, and 丁昱瑄. "Photocatalytic Study of Bismuth Doped Zinc Oxide Films." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/3pu3yz.

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29

Su, Guan-Ze, and 蘇冠澤. "Ag-doped Zinc Oxide Nanorod-based Optoelectronic Devices." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/wtbr75.

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碩士<br>國立虎尾科技大學<br>光電工程系光電與材料科技碩士班<br>104<br>The study is aim to investigate the production of zinc oxide nanorods device, using inexpensive and simple hydrothermal method, zinc oxide doped with different concentrations of Ag, we discuss how to make stable and good characteristics of P-type oxide zinc successfully, and grown on the AZO seed layer, and make it a PN junction, complete a device to reduce lattice mismatch and so distortion caused. The main research can be divided into two parts: The first part: Using RF-magnetron sputtering machine on a ITO glass substrate by sputtering a layer of
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30

JHONG, SHIH-YAO, and 鐘仕堯. "Preparation and Characterization of Aluminum-doped Zinc Oxide." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/47812009878767669695.

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碩士<br>國立新竹教育大學<br>應用科學系碩士班<br>100<br>Aluminum-doped zinc oxide (AZO) powders were synthesized using a chemical precipitation method. We use both reactants of zinc nitrate and aluminum nitrate as well as urea or ammonia as the precipitant to get precursor. Then the precursor with a doping rate varying from 1 to 11 mol.% of Al were calcined at 400℃-800℃ for three hours. The effects of the various synthesizing parameters, including reaction temperature, the doping amount of aluminum, and the pH value during chemical precipitation reaction, and the calcination temperature of the precursor were inv
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31

Lin, Charng Jiang, and 林長江. "The Effect of Glasses-Doped Zinc Oxide Varistors." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/20407500986819133532.

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32

Wang, Yu-Min, and 王佑民. "Study of zinc oxide doped indium oxide materials for reflective electrode." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/23v62e.

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碩士<br>國立臺北科技大學<br>光電與平面顯示器產業研發碩士專班<br>95<br>This dissertation investigates the growth and characteristics of double Ag/ZIO layers on glass for reflective ohmic contact by RF reactive magnetron sputtering. By changing the deposition condition, we analyzed how the different parameters affect the characteristics of ZIO and Ag on Flip-Chip LEDs application. We found that the light-transmission of ZIO film is about 80~90% at 470 nm blue light. The light-reflection of Ag/ZIO flim is about 85% at 460 nm blue light. The light-reflection of ZIO/Ag flim is about 68% at 460 nm blue light.So Ag/ZIO f
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33

Shie, Chnigyi, and 謝青嶧. "Zinc Oxide On Yttium-doped Cerium Oxide Of Aintering And Ionic Conductivity." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/15229832973184942120.

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碩士<br>義守大學<br>材料科學與工程學系<br>100<br>This study attempts to transition metal oxides (Zn, Cu, Co) as sintering additives, doped to the Ce0.85Y0.15O2-δ (CYO), due to the electrolyte of solid oxide fuel cells require high density, it is expectedadded to the transition metal oxides can increase the sintering. First, we use the Pechini method, the ammonia co-precipitation method with ammonium bicarbonate coprecipitation method to prepare the CYO powder. The results show that using the Pechini method with ammonia precipitation method CYO bulk, 94% in 1350 sintered relative density of 6 hours. Ammonia c
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34

Wei, Fanjie. "Aluminum Doped Zinc Oxide Thin Film for Organic Photovoltaics." Thesis, 2010. http://hdl.handle.net/1807/24651.

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Aluminum Doped Zinc Oxide (AZO) produced by radio frequency (RF) magnetron sputtering is thought to be the prospective replacement of the de facto standard indium tin oxide (ITO) anode in organic solar cells. In order to achieve a proper resistivity and transmittance of AZO thin film compared to ITO, a systematic study was done to optimize the sputtering conditions. In this work, two primary parameters: target-substrate distance and sputtering power, were optimized, and a optimized film thickness was determined. A poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PC
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Yung, Weijung, and 勇威戎. "Preparation And Characterization Of Aluminum-Doped Zinc Oxide Films." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/33653870349987702016.

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碩士<br>東海大學<br>化學工程與材料工程學系<br>101<br>In this study, we reported on the micro-structural, transparent and heat shielding, and dielectric properties of aluminum-doped ZnO thin films prepared by sol-gel method. The doping amounts of Al, the number of coating layers, and the concentrations of ZnO have strong influence on the properties of the AZO thin films. 　　The undoped ZnO thin films were dried at a constant temperature of 250 ℃ for 10 minutes and then sintered at a constant temperature of 600 ℃ for 1 hours. As the concentration of undoped ZnO thin films increases, the surface average roughness
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CHEN, XIN-JIA, and 陳信嘉. "UV Sensing Properties of Ni Doped Zinc Oxide Nanostructure." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/8pfx7k.

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碩士<br>國立虎尾科技大學<br>光電工程系光電與材料科技碩士班<br>107<br>In this study, nickel (Ni) doped zinc oxide (ZnO) nanostructures were synthesized by a simple and inexpensive hydrothermal method at 90°C, and used to UV sensor.In order to change the concentration of Ni doping and to explore its structural changes and characteristics of stability, the main research can be divided into the following two parts: Part I: First, 100 nm ZnO film was deposited on glass substrates by radio frequency magnetron sputtering (RF) machine as seed layer. The nanostructures of Ni-doped ZnO were grown by hydrothermal method with zi
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Tsai, Ju-Hsuan, and 蔡儒璇. "Aluminum-doped zinc oxide nanostructures applied in piezoelectric nanogenerators." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/u4u9t2.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>97<br>Using low temperature wet chemical growth of one-dimensional aluminum-doped zinc oxide nanostructure on indium-tin oxide (ITO) substrates and flexible plastic substrates. Discuss effects of growth temperatures, concentrations, and reaction time on the morphology and characteristics of the ZnO nanorods. Photoluminescence (PL) and UV/Vis spectrometer were also employed to understand the luminescent and transmittance characteristics of the nanorods. This was due to the combination of Zn+ ions and OH- ions which affected by doping concentration. The results sh
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38

Peng, Yeh-Chun, and 彭彥鈞. "Electrochemical behavior of transparent conductive Al-doped zinc oxide(AZO) and tin-doped indium oxide(ITO) films." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/40131951394867959955.

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碩士<br>國立中央大學<br>機械工程研究所<br>95<br>The electrochemical behavior of Al-doped zinc oxide(AZO)、Tin-doped indium oxide(ITO)、Sc-doped AZO and AZO annealed at 300℃ for 1hr were immersed in 3.5%NaCl and in different buffer solutions varying with pH were investigated in this work. Electrochemical techniques such as measurement of open circuit potential, linear polarization, cyclic voltammograms, electrochemical impedance spectroscopy were employed. Reaction products on the surface of oxides under different potentials were examined for those produced on a variety of potentials in different duration. The
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Chen, Xin-Zhang, and 陳信樟. "The Field-Emission Characteristics of Aluminum-Doped and Silver Doped Zinc Oxide Nanorods." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/93404939218906313100.

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碩士<br>大葉大學<br>電機工程學系<br>101<br>In this study, aluminum-doped zinc oxide (ZnO) and silver-doped zinc oxide nanorods were grown by a hydrothermal method and the effect of varying the doping concentration on the field emission characteristics of the synthesized ZnO nanorods were studied. The growth procedure of ZnO nanorods is first spin-coating a seeding layer on silicon substrates, followed by the growth in the mixed solution of zinc nitrate hexahydrate (Zn(NO3)2•6H2O), hexamethylenetetramine (C6H12N4), and aluminum nitrate (Al(NO3)3•9H2O) or silver nitrate (AgNO3) at 90oC for 2 hours. The rati
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Chen, Chih-Ming, and 陳志明. "Study of zinc oxide doped indium oxide ohmic contacts to p-type GaN." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/m28z37.

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碩士<br>國立臺北科技大學<br>光電工程系所<br>94<br>This dissertation investigates the growth and characteristics of Zinc oxide doped Indium oxide alloys on glass and p-GaN by RF reactive magnetron sputtering.By changing deposition condition to analysis the characteristics of ZIO.Next，we found that the thermal stability of ZIO is well by changing anneal temperature in air. P-type ohmic contact between zinc oxide doped indium oxide (ZIO) and p-GaN during heat treatment is reported. Optimum conditions are selected to minimize the lowest specific contact resistance obtained is 1.4×10-4 Ω-cm2, as examined by trans
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Wu, Wenyu, and 吳文語. "Epitaxial Growth Of Doped Zinc Oxide Films By Hydrothermal Method." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/51066671994108483371.

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碩士<br>義守大學<br>材料科學與工程學系<br>100<br>In this research, doped ZnO exitaxial films were grown on Al2O3 substates by hydrothermal process. The work can be divided into two parts. In the first parts, hydrothermal epitaxial growth of undoped ZnO films was performed in HMT or NH4OH based aqueous solution systems, respectively. The effect of hydrothermal solution on the growth of ZnO films was investigated. In the second part, in order to obtain K-doped ZnO films, the different types of potassium salt (KNO3 or CH3COOK) were added into solution, respectively. The effect of the various potassium salt addi
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Ma, Zhong-Min, and 馬忠民. "Study on Nitrogen Doped Zinc Oxide (ZnO:N) Thin Film Transistors." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/6hj2hr.

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Cheng-YuChi and 紀承佑. "Fabrication of Aluminum-Doped Zinc Oxide (AZO) Based Gas Sensors." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/wzt5uy.

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碩士<br>國立成功大學<br>微電子工程研究所<br>105<br>With the development of industry, people's daily life is full of more and more industrial products, which can release volatile organic compounds (VOCs) in indoor air. Most of the VOCs, which are exposed to people for some time, pose a threat to human health when the concentration reaches a certain degree. Therefore, people also gradually focused on gas sensors. Nowadays, gas sensors based on metal oxide semiconductor materials have attracted increasing interests, due to their simple implementation, low cost, high compatibility with semiconductor processing an
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HUANG, BO-WEI, and 黃柏崴. "Piezoelectric Nanogenerators Based on Sulfur-Doped Zinc Oxide Nanorod Arrays." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/zcajmj.

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碩士<br>國立虎尾科技大學<br>光電工程系光電與材料科技碩士班<br>106<br>Zinc oxide is II-VI compound semiconductor with a direct bandgap energy band structure (energy gap of 3.37 eV) and it also has large exction binding energy 60 meV. In addition, ZnO has the characteristic of low resistivity and high transparency, therefore, it is considered as a promising material for the application of the optoelectronics. In this study, ZnO film is deposited by sputter on ITO glass substrate, and Sulfur-doped ZnO nanorod Arrays structure are grown by hydrothermal method. Then, the shape of Sulfur-doped ZnO nanorod Arrays was analyze
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JIANG, ZONG-LIN, and 江宗霖. "Growth of gallium-doped zinc oxide (GZO) and its application." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/p6bxm6.

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碩士<br>國立虎尾科技大學<br>光電工程系光電與材料科技碩士班<br>106<br>In this thesis, gallium-doped zinc oxide (GZO) thin films are deposited on sapphire and silicon substrates by dual-plasma-enhanced metal-organic chemical vapor deposition (DPEMOCVD) method, the optical and electrical characteristics of GZO thin films depend on the radio frequency (RF) plasma power, growth temperature and gallium content in GZO thin film. Under the optimal deposition conditions with 350W RF power, growth temperature of 240 oC and gallium content of 6.67%, the GZO thin film shows thickness of 250 nm, transmittance of the film is 88% ov
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Cheng, Yu-Chih, and 鄭宇智. "Fabrication of Homojunction Photodetectors withPhosphorus-Doped Zinc Oxide Nanorod Arrays." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/w3k7t6.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>103<br>In this study, the production of zinc oxide nanorods homogeneous light sensor to study the theme, the use of inexpensive and simple hydrothermal method, zinc oxide is doped with different concentrations of phosphorus and how to successfully make stable and good characteristics of P-type oxide zinc, and then stacking undoped zinc oxide, and make it a PN junction, complete a homogeneous light sensors to reduce lattice mismatch and so distortion caused. The main research can be divided into two parts: The first part: using RF-magnetron sputtering machine on
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Wei, Chu-yu, and 魏竹瑜. "Study of Al-doped zinc oxide nanorods by hydrothermal process." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/np6bsc.

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碩士<br>國立虎尾科技大學<br>光電與材料科技研究所<br>98<br>In this study, the major purpose was that using low-cost and low- temperature hydrothermal process to grow Al-doped zinc oxide nanorods. The thickness of zinc oxide film was 150nm, using RF-sputter to deposite on n-type Si substrate. Zn(NO3)2•6H2O and C6H12N4 were used to grown zinc oxide nanorods. In order to reach the doping purpose, we added Al(NO3)2 solution to provide aluminum ion to react. We utilized the characteristic of aluminum active which is better than zinc to replace some zinc atoms. The nanorods electric conductivity was changed by means of
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Hou, Chun-Yue, and 侯君岳. "Investigation of Growing Density for Al-doped Zinc Oxide Nanorods." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/76859548145171578438.

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碩士<br>國立中興大學<br>光電工程研究所<br>104<br>In this study, various techniques are utilized to controll the growing density of Al-doped ZnO nanorods. The p-i-n hydrogenated amorphous silicon thin film are deposited by PECVD system and applied to the Al-doped ZnO nanorods to form the amorphous silicon thin film solar cells. The coaxial structure are implemented by controlling the density of nanorods to increase the absorption of light and further enhance the conversion efficiency of thin film solar cell. A seed layer on the glass is prepared by the spin coating method and the furnace annealing,In order t
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Hsieh, Hsiu-ming, and 謝修銘. "High-Humidity Study on Aluminum Doped Zinc Oxide Thin Films." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/57792940194528423114.

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碩士<br>國立中央大學<br>化學工程與材料工程研究所<br>98<br>This study focuses on the electrical and optical stability of AZO (ZnO: Al2O3= 98 wt.% : 2 wt.%) transparent conductive thin film in high humidity environment, and discusses their behavior in different annealing ambient (vacuum and oxygen). In this experiment, we use the RF-magnetron sputter system to deposit the thin films on the quartz substrate. After deposition, there are two different annealing ambient is applied, which are vacuum and oxygen. Finally, these samples were put in a high humidity environmental test system. Using Hall Measurement and
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Yang, Chia-hao, and 楊家豪. "Mechanical Properties of Aluminum-doped Zinc Oxide Transparent Conducting Films." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/51126990025967626671.

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碩士<br>大同大學<br>機械工程學系(所)<br>97<br>Flexible displays will play an important role in future electronic products ranging from cell phones and PDAs to computers, toys, and electronic books due to their attractive properties including reductions in weight and thickness, improved ruggedness, and flexible form. To bear repeated tensions, bends, and folds, it is important to investigate the mechanical properties of components in flexible displays. This paper aims to measure the mechanical properties of aluminum-doped zinc oxide (AZO) transparent conductive thin film. The AZO films were deposited on
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