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1

Bali, R. "Exchange anisotropy in magnetic thin films." Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.596311.

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I have studied Exchange Bias in epitaxial α-Fe2O3 and polycrystalline FeMn and CoMn antiferromagnets coupled to the ferromagnet Permalloy (Ni81Fe19). Despite the nominal magnetocrystalline anisotropy of Permalloy, surface features such as vicinal steps and roughness induced strong uniaxial anisotropy. Exchange coupling with epitaxial α-Fe2O3 led to a biaxial anisotropy component in the ferromagnet. Anisotropy axes of the biaxial component remained fixed despite applying magnetic field at elevated temperatures. The magnitude of biaxial anisotropy varied with every temperature cycle, providing implicit evidence of domains in the antiferromagnet. In polycrystalline systems, uniaxial anisotropy of the ferromagnet set-up during growth competes with exchange anisotropy. By setting up an AF/F/AF trilayer, magnetic field cooling allowed control of the net anisotropy. These findings demonstrate that the two crucial factors that impact exchange biased thin films are (1) uniaxial anisotropies in the ferromagnet from surface and growth conditions and (2) exchange coupling with domains in the antiferromagnet. Competing effect of these two factors is the key to understanding any exchange coupled system.
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2

Lu, Zhihong. "Magnetic anisotropy graded media and Fe-Pt alloy thin films." Thesis, [Tuscaloosa, Ala. : University of Alabama Libraries], 2009. http://purl.lib.ua.edu/99.

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3

Gueye, Mouhamadou. "Magnetic thin films on flexible substrates : magnetomechanical study by ferromagnetic resonance." Thesis, Sorbonne Paris Cité, 2017. http://www.theses.fr/2017USPCD007/document.

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Les films minces déposés sur des substrats flexibles ont été intensivement étudiés ces dernières années en raison de leur nombreuses applications en électronique flexible. Depuis peu, l'électronique flexible est étendu aux matériaux magnétiques conduisant ainsi au domaine émergeant de la magnéto-électronique flexible actuellement à l'avant garde des sujets de recherche de la spintronique. Ce travail de thèse est dédié à l'étude des propriétés magnéto-mécaniques de films minces magnétiques (Ni, NiFe, Co2FeAl, CoFeB, FeCuNbSi) sur des substrats flexibles. Les analyses structurales ont montré que les films de Ni et de CFA sont polycristallins non-texturés ; le CFB est amorphe. Par conséquent, les propriétés élastiques et magnéto-élastiques de ces films sont considérées comme étant isotropes. Une technique basée sur une utilisation conjointe d'essai mécanique, la résonance ferromagnétique (FMR) et la corrélation d'images numériques (CIN) a été développée pour étudier les propriétés magnéto-mécaniques de films minces sur substrats flexibles. A l'aide de cette méthode, il est possible de suivre l'évolution de l'anisotropie résiduelle omniprésente dans les films magnétiques sur substrats flexibles. Cette anisotropie est liée aux propriétés mécaniques contrastées lorsqu'on dépose un film mince rigide (grand module d'Young) sur un substrat flexible (petit module d'Young). L'effet du recuit sur les propriétés élastiques et magnéto-élastiques a été soigneusement étudié dans le film CFB validant ainsi l'intérêt porté à ses alliages pour des applications en spintronique. Enfin, la résonance ferromagnétique est employé en balayage en fréquence pour suivre la variation de la direction de l'aimantation en fonction des déformations induites par l'application de tension électrique sur l'actionneur piézoélectrique. Un retournement de 90° de la direction de l'aimantation dans le film Co2FeAl sur substrat flexible de Kapton® est observé
Thin films deposited on flexible substrates have been widely studied in the last decades due to the numerous applications in flexible electronics. Recently, flexible electronics have been extended to magnetic materials leading to the so-called emerging feld of flexible magnetoelectronics which is actually at the cutting-edge of spintronics research topics.This thesis is devoted to the study magnetomechanical properties of magnetic thin films (Ni, NiFe, Co2FeAl, CoFeB, FeCuNbSi) on flexible substrates. Structural analysis have 130 Abstracts hown that the Ni and CFA films are found to be polycrystalline with no strong preferred orientations ; the CFB film is amorphous. Consequently, the elastic and magnetoelastic properties are isotropic. For the study of the magnetomechanical properties, a set-up based on a jointly use of deformation test (bending or piezoactuation), ferromagnetic resonance (FMR) and digital image correlation (DIC) have been developped. Thanks to this method, it is possible to follow the evolution of the inescapable residual anisotropy encountered in magnetic thin films on flexible substrates under deformation and to determine the effective coefficient of magnetostriction of the films (sometimes unknown).This residual anisotropy is ascribed to contrasted mechanical strength when a sti thin film is deposited on a compliant substrate. The effect of the annealing temperature on the elastic and magnetoelastic have been studied carefully in CFB validating then theinterest on such alloys for spintronics applications. Finally, we have employed FMR inits sweep frequency mode to study the effective evolution of magnetization direction as function of the voltage-induced strains. A 90-degree magnetization rotation in Co2FeAl thin film on Kapton® polyimide substrate is observed
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4

Yasseen, Kalim Mahmood. "The magnetic and microstructural properties of TbFeCo films." Thesis, University of Salford, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308380.

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5

Stiller, Markus, Jose Barzola-Quiquia, Pablo Esquinazi, Daniel Spemann, Jan Meijer, Michael Lorenz, and Marius Grundmann. "Strong out-of-plane magnetic anisotropy in ion irradiated anatase TiO2 thin films." Universitätsbibliothek Leipzig, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-216180.

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The temperature and field dependence of the magnetization of epitaxial, undoped anatase TiO2 thin films on SrTiO3 substrates was investigated. Low-energy ion irradiation was used to modify the surface of the films within a few nanometers, yet with high enough energy to produce oxygen and titanium vacancies. The as-prepared thin film shows ferromagnetism which increases after irradiation with low-energy ions. An optimal and clear magnetic anisotropy was observed after the first irradiation, opposite to the expected form anisotropy. Taking into account the experimental parameters, titanium vacancies as di-Frenkel pairs appear to be responsible for the enhanced ferromagnetism and the strong anisotropy observed in our films. The magnetic impurities concentrations was measured by particle-induced X-ray emission with ppm resolution. They are ruled out as a source of the observed ferromagnetism before and after irradiation.
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6

Niesen, Alessia [Verfasser]. "Heusler materials with perpendicular magnetic anisotropy. Thin films for spintronics / Alessia Niesen." Bielefeld : Universitätsbibliothek Bielefeld, 2019. http://d-nb.info/1183256590/34.

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7

Inglefield, Heather Elizabeth. "Misfit accomodation in thin films of Ni/Cu as measured by magnetic anisotropy." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/32659.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1995.
Includes bibliographical references (leaves 134-137).
by Heather Elizabeth Inglefield.
Ph.D.
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8

Huang, Efrem Yuan-Fu. "L10-Ordered Thin Films with High Perpendicular Magnetic Anisotropy for STT-MRAM Applications." Research Showcase @ CMU, 2016. http://repository.cmu.edu/dissertations/880.

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The objective of the research conducted herein was to develop L10-ordered materials and thin film stack structures with high perpendicular magnetic anisotropy (PMA) for spin-transfertorque magnetoresistive random access memory (STT-MRAM) applications. A systematic approach was taken in this dissertation, culminating in exchange coupled L10-FePt and L10- MnAl heterogeneous structures showing great promise for developing perpendicular magnetic tunnel junctions (pMTJs) with both high thermal stability and low critical switching current. First, using MgO underlayers on Si substrates, sputtered MnAl films were systematically optimized, ultimately producing a Si substrate/MgO (20 nm)/MnAl (30)/Ta (5) film stack with a high degree of ordering and large PMA. Next, noting the incompatibility of insulating MgO underlayers with industrial-scale CMOS processes, attention was turned to using conductive underlayers. TiN was found to excel at promoting growth of L10-MnAl, with optimized films showing improved magnetic properties over those fabricated on MgO underlayers. Although the MnAl films grown on TiN underlayers on Si substrates demonstrated good magnetic properties, it was found that the high deposition and ordering temperatures contributed to high film roughness. In an effort to reduce ordering temperature and surface roughness of L10- MnAl films, adding other materials (Ni, C, and SiOx) to the MnAl film in conjunction with various underlayers was studied. MnAl:Ni films with a fixed 3 volume% Ni content deposited on TiN underlayers revealed that PMA was reduced compared to MnAl films, and surface roughness increased dramatically below the ordering temperature. MnAl:C films with 1volume% C showed an increase in PMA, while C in excess of the solubility limit (1.7 atomic %) diffused to the grain edges, degrading PMA. MnAl:SiOx films demonstrated poor PMA. The use of different post-annealing processes was then studied as an alternative to in situ annealing. Rapid thermal annealing (RTA) was found to produce PMA in films at lower annealing temperatures than tube furnace annealing, but tube furnace annealing produced films with higher maximum PMA than RTA. While annealed samples had lower surface roughness than those ordered by high in situ deposition temperatures, relying solely on annealing to achieve L10-ordering resulted drastically reduced PMA. Since the material additions, underlayer systems, and annealing techniques studied either did not reduce film roughness or resulted in reduced PMA of thin films, attention was turned to MTJ stack structures employing heterogeneous material systems for top and bottom electrodes, which might produce film stacks with both high PMA and low surface roughness. As a way to potentially mitigate roughness issues with using MnAl-based thin films as both free and reference layers in an MTJ, exchange coupled heterogeneous structures were studied. Given the high PMA of L10-FePt and low damping of L10-MnAl, L10-FePt/MnAl heterogeneous structures were studied as a way to take advantage of STT potentially being a surface process. Unfortunately, depositing the MnAl at elevated temperatures resulted in interdiffusion between FePt and MnAl, and caused a degradation in PMA. High- and low-anisotropy thin films separated by a thin barrier were then examined in the form of in-plane hard-FePt/barrier layer/inplane soft-FePt film stacks. It was found that significant exchange coupling energy was still observed at barrier thicknesses of around 1 nm. Since scaled MTJs have tunnel barriers below 1 nm, interlayer exchange coupling between the electrodes might thus be used for partially pinning the free layer, thereby increasing effective PMA. It is suggested that pinning a low-damping free layer by a high-PMA reference layer may therefore result in an MTJ with both high effective PMA and low effective damping. Finally, heterogeneous L10-ordered FePt/MgO/MnAl film stacks were explored for pMTJs. Film stacks with MgO barrier layers thinner than 2 nm showed significant interdiffusion between the FePt and MnAl, while film stacks with thicker MgO barrier layers exhibited good ordering and high PMA in both the FePt and MnAl films. It is believed that this limitation is caused by the roughness of the underlying FePt, which was thicker than 2 nm. Unfortunately, MgO barrier layers thinner than 2 nm are needed to make good MTJs. With further study, thin, continuous barriers may be achievable for high-PMA, L10- ordered materials with more materials exploration, deposition optimization, and more advanced thin film processing techniques and fabrication equipment. Use of appropriate underlayers, capping layers, dopant elements, and improved fabrication techniques may help reduce surface roughness while preserving PMA. If smooth electrodes can be developed, the heterogeneous structures discussed have great potential in taking advantage of exchange coupling for developing pMTJs with both high thermal stability and low critical switching current.
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9

Steinke, Nina-Juliane. "Structure and magnetic properties of anisotropic ferromagnetic thin-film heterostructures." Thesis, University of Cambridge, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609919.

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10

Lee, Aidan Jarreau. "Engineering Magnetism in Rare Earth Garnet and Metallic Thin Film Heterostructures." The Ohio State University, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1589886138733333.

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11

Warnicke, Peter. "Tailored Properties of Ferromagnetic Thin Films." Doctoral thesis, Uppsala universitet, Institutionen för teknikvetenskaper, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-9403.

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Magnetic thin films and patterned nanostructures have been studied with respect to their magnetic properties using SQUID-magnetometry, magnetic force microscopy, electrical measurements, and micromagnetic calculations. Properties of vortex domain walls, trapped in Permalloy nanowires with artificial constrictions, were investigated experimentally and by numerical calculations. In particular, the geometrical extent and strength of the pinning potential were evaluated. In these wires, long-range vortex domain wall displacement induced by spin polarized alternating currents was obtained numerically at reduced threshold current densities as compared with the direct current case. Due to the asymmetry of the energy potential, the long-range displacement direction is determined by the vortex chirality. Strained FeCo/Pt superlattices with strong perpendicular anisotropy were investigated experimentally. The strain was controlled by varying the thickness of each alternating layer with monolayer precision and was found to have a dominating effect on the total anisotropy. Epitaxial films of the diluted magnetic semiconductor (Ga,Mn)As were studied with focus on how the ferromagnetic transition temperature could be controlled by post-growth annealing. The ferromagnetic transition temperature was enhanced by approximately 85% for a Mn-doping concentration of 6% under certain conditions. A method to manipulate micrometer sized magnetic particles on patterned arrays of elliptical Permalloy microstructures was studied. Controlled motion and separation of the magnetic particles were obtained using applied rotating magnetic fields. The domain structure of the elliptical elements was studied numerically.
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12

Jaiswal, Samridh [Verfasser]. "Investigation of the Dzyaloshinskii-Moriya interaction and perpendicular magnetic anisotropy in magnetic thin films and nanowires / Samridh Jaiswal." Mainz : Universitätsbibliothek Mainz, 2018. http://d-nb.info/116285913X/34.

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13

Yi, Jae-Young. "Microstructure and magnetic properties of Co-(CoO, CoNiO2̳, NiO) and Cox̳Ni1̳-̳x̳-CoO nanocomposite thin films /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2000. http://wwwlib.umi.com/cr/ucsd/fullcit?p3000403.

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14

Mohanan, Senthilnathan. "Tailoring the magnetic anisotropy of thin films utilizing large persistent stress and pulsed laser irradiation." [S.l. : s.n.], 2009. http://nbn-resolving.de/urn:nbn:de:bsz:289-vts-66577.

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15

Bochi, Gabriel 1969. "Magnetic anisotropy in epitaxial Ni/Cu (001) thin films and Cu/Ni/Cu (001) sandwiches." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/11514.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1995.
Vita.
Includes bibliographical references (leaves 156-161).
by Gabriel Bochi.
Ph.D.
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16

Chaluvadi, Sandeep kumar. "Influence of the epitaxial strain on magnetic anisotropy in LSMO thin films for spintronics applications." Thesis, Normandie, 2017. http://www.theses.fr/2017NORMC248/document.

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Nous présentons une étude des effets de contrainte induits par l’épitaxie dans des couches minces La1-xSrxMnO3 (LSMO) (001) (x = 0.33) pour 3 épaisseurs de films (50, 25 et 12 nm) déposés par Ablation Laser Pulsée (PLD) sur différents substrats tels que SrTiO3 (STO) (001), STO buffered MgO (001), NdGaO3 (NGO) (110) et (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) (001). L’étude est complétée par l’effet de la composition sur les propriétés magnétiques de couches minces de La1-xSrxMnO3 avec x=0,33 et 0,38 déposées par Epitaxie à Jets Moléculaires (MBE). Des caractérisations par diffraction de rayons X (XRD), et microscopie à force atomique (AFM), des mesures de résistivité électrique en quatre points en fonction de la température, d’aimantation par magnetometrie à SQUID (Superconducting Quantum Interference Device) et d’anisotropie magnétique par magnétométrie magnéto-optique Kerr vectorielle (MOKE) sont présentées. Les évolutions angulaires de l’anisotropie magnétique, de l’aimantation à rémanence, du champ coercitif et du champ de renversement d’aimantation ont ainsi pu être analysées pour des films épitaxiés LSMO de différentes épaisseurs. Des études en fonction de la température complètent les données. L’origine de l’anisotropie (magnétique, magnétocristalline, magnétostrictive ou liée aux effets de marches et d’angle de désorientation du substrat) est finalement discutée
We report a quantitative analysis of thickness dependent epitaxial strain-induced effects in La1-xSrxMnO3 (LSMO) (001) (x = 0.33) thin films of thicknesses (50, 25 and 12 nm) grown on various single crystal substrates such as SrTiO3 (STO) (001), STO buffered MgO (001), NdGaO3 (NGO) (110) and (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) (001) by Pulsed Laser Deposition (PLD) technique. We also report the composition dependent magnetic properties of LSMO thin films with x = 0.33 and 0.38 in particular grown onto LSAT (001) substrate by Molecular Beam Epitaxy (MBE). The study mainly includes measurements such as X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), temperature dependent four-probe resistivity, magnetization properties by Superconducting Quantum Interference Device (SQUID), magnetic anisotropy by Magneto-Optical Kerr Magnetometry (MOKE). Our results highlight the detailed study of angular evolution and thickness dependent magnetic anisotropy, remanence, coercivity and switching field in epitaxial LSMO thin films. Temperature-dependent studies are also performed on few selected films. We will also discuss the cause of magnetic anisotropy in LSMO films i.e., magneto-crystalline and magnetostriction anisotropy and the effects of steps or substrate mis-cut induced anisotropy
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17

China, Chaitali. "MAGNETIC PROPERTIES OF SPUTTER DEPOSITED FE-BASED AMORPHOUS THIN FILMS FOR RESONATOR APPLICATION." Master's thesis, University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3377.

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In this study we investigate the magnetic properties of Fe-based amorphous thin films. Fe1-x-y-zBxSiyCz, Fe80-xNixB20, Fe80-xMnxB20, and Fe73-xMnxB27 films were deposited on silicon and glass substrates in a DC and RF magnetron sputtering system. Inductive magnetic measurements were performed to investigate the magnetic properties, including induced anisotropy and magnetostriction, of the as-deposited and annealed films using an M-H Looper. The chemical composition of the films was characterized using secondary ion mass spectroscopy (SIMS). The physical thickness of the films was determined by use of a stylus profilometer. The M-H Looper studies indicated that the induced anisotropy (Hk) depends strongly on the nickel concentration as well as on the annealing conditions, specifically the time and temperature of the annealing process. For the same metalloid concentration, the induced anisotropy has a maximum as a function of Ni. For the same nickel concentration and annealing time, it was found that the value of Hk decreases with the increase in annealing temperature. For each composition studied, low temperature long time annealing showed a higher value of Hk compared to high temperature short time annealing. From the magnetostriction values of Fe80-xNixB20 alloys, it was found that the sputter deposited films show similar trend but differ in magnitude when compared with ribbon samples. The magnetostriction of annealed thin films is found to be representative of ribbon samples. A potential composition modification to improve the strength of the field induced anisotropy is the addition of low levels of Mn.
M.S.M.S.E.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Materials Science and Engineering
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18

King, Christopher Stuart. "Magnetotransport and magnetocrystalline anisotropy studies of gallium manganese arsenide thin films." Thesis, University of Nottingham, 2008. http://eprints.nottingham.ac.uk/10646/.

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The ferromagnetic semiconductor gallium manganese arsenide is an important test-bed material for spintronics applications. Whilst a Curie temperature anywhere close to room temperature has yet to be demonstrated, the excellent micromagnetic properties, simple band structure and unusual combination of having both low moment densities and high spin-orbit coupling make this an interesting material to study from both theoretical and experimental perspectives. This thesis reports some experimental studies into the magnetic and magnetoresistive anisotropies in gallium manganese arsenide. In the first main chapter a study of the Anisotropic Magnetoresistance in thin (Ga,Mn)As films is reported, based on transport measurements of micro-scale devices, contributing to the first systematic study in this material. The Anisotropic Magnetoresistance comprises crystalline and non-crystalline components; this study shows that a uniaxial crystalline component can dominate over the whole range of temperatures from 2K up to the Curie temperature, the first time this has been seen in any material system to our knowledge. The following chapter shows that the magnetic anisotropy of gallium manganese arsenide thin films can be engineered by lithographically patterning the material into structures on length scales of a micron or less. Using electron beam lithography to define the structures and SQUID magnetometery to study the resulting magnetic configuration, it is shown that the magnetic anisotropy can be greatly modified, even resulting in a switching of the easy- and hard-axis directions. Finally a new technique based on Anisotropic Magnetoresistance measurements is presented to locate the crossover of competing magnetic anisotropy coefficients in the temperature domain. Conventionally performed by SQUID magnetometry, this new technique is cheaper and simpler whilst qualitatively reproducing the main features of the SQUID measurements.
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19

Eickmann, James Thomas 1970. "Influence of ultra-thin Au interface layers on the structure and magnetic anisotropy of Co films." Diss., The University of Arizona, 1998. http://hdl.handle.net/10150/282634.

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I have investigated the influence of an ultra-thin Au interface layer on the magnetic anisotropy of Co-Pd and Co-Cu structures. Sandwich structures of the form X/Co/Y/Cu/Si(111), with (X, Y) = (Pd, Pd), (Au, Pd), (Pd, Au), (Cu, Cu), (Au, Cu), and (Cu, Au) were studied. For each structure, a Au layer of systematically varied thickness (t(Au)) was inserted at one Co interface. I also investigated Co/Pd and Co/Cu multilayer systems. For each Co-Pd sandwich structures a maximum is observed in the magnetic anisotropy for t(Au) = 1 to 1.5 atomic monolayer (ML). For the Co/Pd multilayer system, a maximum in coercivity occurs with tAu = 0.5 ML. For each Co-Cu sandwich structure except (X, Y) = (Cu, Au), a minimum in magnetic anisotropy is observed at t(Au) = 1 ML. For the Co/Cu multilayer system, a decrease in magnetoresistance was seen with increased tAu except in multilayers with a relatively thin Co layer thickness (∼3 ML) which display a peak in magnetoresistance is seen at tAu = 1 ML. I have also investigated the strain, surface alloying, and surface (interface) roughness of these systems using RHEED, XPS, and LAXD. Analysis of these measurements reveals some correlation between magnetic anisotropy and both strain and surface roughness. Based on my investigations, I conclude that the most likely cause for the non-monotonic changes seen in anisotropy is changes in the surface magnetocrystalline anisotropy. While strain and surface roughness may also play a role, I believe that the influence of the ultra-thin Au interlayer on the orbital hybridization and electronic environment at the interface is dominant.
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20

Lu, Lili. "Thin films based on Prussian blue analogues: growth mechanism and physical properties." Palaiseau, Ecole polytechnique, 2014. http://tel.archives-ouvertes.fr/index.php?halsid=piqk83ruqrrii2rr26l5du9r32&view_this_doc=pastel-01058915&version=1.

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Dans ce travail, nous avons étudié la nucléation, les mécanismes de croissance et les propriétés physico-chimiques de films minces de composés analogues du bleu de Prusse (PBA), de formule générale AxM[M'(CN)6]y. ZH2O, où A est un cation alcalin, et M et M' sont des cations divalents et trivalents de métaux de transition. La croissance de films RbNiCr et RbCoFe a été réalisée à partir de solutions contenant tous les précurseurs, sur des surfaces de silicium Si(111) fonctionnalisées par une monocouche dense de groupements pyridyles. Des études en fonction de l'épaisseur des films ont été réalisées à partir de mesures de réflectivité de RX et de caractérisations par AFM. Ces études démontrent que la nucléation est instantanée et que les îlots initialement formés croissent latéralement jusqu'à coalescence. Au-delà d'une épaisseur de 15 nm, les films sont quasi continus et la croissance se poursuit couche par couche. Des mesures de diffraction des rayons X montrent que les grains sont colonnaires et cristallins sur toute l'épaisseur des films avec une texture (002), et sans orientation particulière dans le plan. Pour les films RbNiCr, une composition uniforme Rb0. 1Ni[Cr(CN)6]0. 7. ZH2O, similaire à celle de nanoparticules colloïdales, a été déterminées à partir de mesures par rétrodiffusion Rutherford. Dans le cas des films RbCoFe, les mesures RBS ont montré l'existence d'un excès de Rb par rapport à la composition des nanoparticules. Les mesures des propriétés magnétiques des couches RbNiCr par magnétométrie SQUID donne un moment magnétique de 3,9 μB, en accord avec la valeur théorique, et indiquent une augmentation de la température de Curie de 30 K à 65 K lorsque l'épaisseur des films augmente de 2. 7 nm à 46. 4nm. Une anisotropie d'aimantation inclinée est observée qui resulte de la texture du film et de la structure colonnaire des grains dont le rapport d'aspect hauteur / diamètre est supérieur à l'unité. Les couches RbCoFe présentent des propriétés de photocommutation (mesures XAS au seuil K du Co) qui indiquent la présence d'une fraction importante (66%) de paires Co(II) / Fe(III). Une étude préliminaire d'hétérostructures RbNiCr / RbCoFe est également présentée
In this work, we have investigated the nucleation and growth mechanisms and also the physicochemical properties of Prussian blue analogues (PBA) thin films of general formula of AxM[M'(CN)6]y. ZH2O, where A is an alkali metal ion, and M and M' are divalent and trivalent transition cations. RbNiCr and RbCoFe films are grown from a solution containing all precursors on a well-defined functionalized Si(111) surface terminated by a densely packed monolayer terminated with pyridyl groups. A thickness dependent study, using X-ray reflectivity and AFM characterizations, demonstrates that the nucleation is instantaneous and that initial islands expand laterally until coalescence. Above a thickness of ca. 15 nm, the films are quasi continuous and grains grow in a layer by layer fashion. X-ray diffraction demonstrates that the columnar grains are crystalline from bottom to top and adopt the (002) orientation, with, however no in plane orientation. In the case of RbNiCr, a uniform composition Rb0. 1Ni[Cr(CN)6]0. 7. ZH2O (measured by Rutherford Backscattering) is determined, which is consistent with that of corresponding colloidal nanoparticles. In the case of RbCoFe, an excess of Rb is found with respect to the particles of the same material. The magnetic characterization of RbNiCr layers (SQUID measurements) give a magnetic moment of 3. 9 μB, in agreement with expectation. The Curie temperature increases from 30 K to 65 K with increasing film thickness. Tilted magnetization anisotropy is observed induced by the film texture and also by the columnar structure of grains which aspect ratio height / diameter is greater than unity. RbCoFe layers exhibit photo switching properties (XAS measurements at Co K edge) indicating the presence of a significant fraction of Co(III)-Fe(II) pairs (66 %). A preliminary study of heterostructures RbNiCr/RbCoFe is also presented
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Pires, Manoel Jose Mendes. "Ressonância magnética eletrônica em materiais heterogêneos : Gd5(SixGe1-x)4, Co-SiO2 e Co-Cu." [s.n.], 2006. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277668.

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Orientador: Edson Correa da Silva
Tese (doutorado) - Universidade Estadual de Campinas. Instituto de Fisica Gleb Wataghin
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Resumo: Estudamos materiais magnéticos heterogêneos por meio de várias técnicas experimentais mas tendo como técnica principal a ressonância magnética eletrônica (RME), tanto no regime ferromagnético quanto no paramagnético. Dois grupos de materiais foram investigados: compostos de Gd5(SixGe1-x)4 e filmes finos granulares de cobalto embebido em matrizes metálicas (cobre) e semicondutoras (dióxido de silício). Ambos são materiais de grande interesse tecnológico, sobretudo para aplicações em refrigeração magnética no primeiro caso e em dispositivos para gravação e leitura magnética no último. Medidas de RME em função da temperatura foram utilizadas para a caracterização de fases coexistentes em compostos de Gd5(S ixGe1-x)4 permitindo uma discriminação de seus comportamentos magnéticos individuais mais clara do que pode ser obtido por técnicas de magnetometria. É apresentado um estudo detalhado do fator de separação espectroscópica no regime paramagnético que permite a determinação do parâmetro de troca entre os spins localizados e os elétrons de condução. E todos esses resultados são empregados para a análise do complexo comportamento magnético de toda essa família de compostos. Medidas de ressonância ferromagnética em função da orientação do campo magnético aplicado e em função da temperatura foram empregadas para a determinação das anisotropias magnéticas efetivas de filmes finos de Co10C u90 e de Co-SiO2de várias composições. Para estes últimos empregamos um modelo que considera explicitamente a anisotropia de forma dos aglomerados de Co e que prevê, a partir disto, um termo de anisotropia perpendicular adicional ao que advém da forma da amostra. A análise das linhas de ressonância permitiu ainda uma discussão a respeito das interações magnéticas entre os aglomerados e de como distintos conjuntos de partículas magnéticas contribuem para o comportamento magnético global das amostras
Abstract: We have studied heterogeneous materials by means of several experimental techniques but adopting electron spin resonance (ESR) as the main one, both in the paramagnetic and ferromagnetic regimes. Two sets of materials were investigated: Gd5(SixGe1-x)4 compounds and granular thin films of Co embedded into metallic (Cu) and semiconductor (SiO2) matrixes. There is a great interest on the technological applications of these materials, especially for magnetic refrigeration concerning the former and for magnetic recording and reading devices concerning the last set. ESR measurements as a function of temperature were used for a characterisation of the coexisting phases on Gd5(S ixGe1-x)4 compounds, which allowed a more clear discrimination of their individual behaviours than what can be obtained by magnetometry techniques. It is presented a detailed study of the spectroscopic splitting factor in the paramagnetic regime that allows a determination of the localised spin¿conduction electron exchange parameter. All these results are employed for a analysis of the complex magnetic behaviour of this family of compounds. Ferromagnetic resonance measurements as a function of the orientation of the applied magnetic field and also as a function of temperature have been employed for the determination of the effective magnetic anisotropies of Co10Cu90 and Co-SiO2 thin films of several compositions. For these last films we employed a model considering explicitly the shape anisotropy of the Co clusters, which leads to a perpendicular anisotropy term additional to the one coming from the sample shape. Furthermore, the analysis of the resonance lines allowed a discussion about the magnetic interactions between the clusters and also about the manner as different sets of magnetic particles contribute to the whole magnetic behaviour of the samples
Doutorado
Física da Matéria Condensada
Doutor em Ciências
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22

Wang, Kangkang. "Atomic Imaging and Spin Mapping of Magnetic Nitride Surfaces." Ohio University / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1313500678.

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23

McClure, Adam Marc. "Epitaxial thin film deposition of magnetostrictive materials and its effect on magnetic anisotropy." Diss., Montana State University, 2012. http://etd.lib.montana.edu/etd/2012/mcclure/McClureA0512.pdf.

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Magnetostriction means that the dimensions of a material depend on its magnetization. The primary goal of this dissertation was to understand the effect of magnetostriction on the magnetic anisotropy of single crystal magnetostrictive thin films, where the epitaxial pinning of the material to a substrate could inhibit its conversion to new dimensions. In order to address this goal, several Fe-based binary alloys were deposited onto various substrates by molecular beam epitaxy. The samples were characterized by an array of techniques including electron diffraction, Rutherford backscattering, vibrating sample magnetometry, ferromagnetic resonance, and x-ray absorption spectroscopies. The attempted growths of crystalline magnetostrictive thin films resulted in successful depositions of Fe 1-xGa x and Fe 1-xZn x. Depositions onto MgO(001) substrates result in an in-plane cubic magnetic anisotropy, as expected from the cubic symmetry of the Fe-based thin films, and a strong out-of-plane uniaxial anisotropy that forces the magnetization to lie in the plane of the films. Depositions onto ZnSe/GaAs(001) substrates feature an additional in-plane uniaxial anisotropy. The magnitudes and signs of the in-plane anisotropies depend on the Ga content. Furthermore, the cubic anisotropy constant of Fe 1-xGa x samples deposited onto MgO substrates switches sign at a lower Ga concentration than is seen in bulk Fe 1-xGa x. The effect on the magnetic anisotropy of depositing a magnetostrictive material as an epitaxial thin film is influenced by the material's magnetostrictive properties and the substrate upon which it is deposited. In particular, pinning a magnetoelastic material to a substrate will modify its cubic anisotropy, and depositions on substrates compliant to an anisotropic strain relaxation may result in a strong in-plane uniaxial anisotropy. 'Co authored by Steven Albert, Tino Jaeger, Hongyan Li, Paul Rugheimer, Juergen A. Schaefer, Yves U. Idzerda, Elke Arenholz, Hongyan Li, Gerrit van der Laan, Damon A. Resnick, Christopher M. Kuster.'
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24

Skuza, Jonathan Ronald. "Thin Film and Chemical Ordering Effects on the Magnetic Anisotropy in Binary Alloys." W&M ScholarWorks, 2011. https://scholarworks.wm.edu/etd/1539623583.

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This dissertation presents various investigations into the structure-property correlations in highly anisotropic FePt and FePd thin films and nanostructures. These binary alloy thin films may exhibit long-range chemical ordering (e.g. L10), which induces a strong uniaxial magnetic anisotropy whose orientation is dependent on the ordering direction in the thin film. The chemical ordering, and hence the magnetic anisotropy, in these thin films can be controlled and tailored through sputter deposition and ion implantation conditions followed by subsequent processing. Two novel fabrication methods, x-ray rapid thermal annealing (XRTA) and heavy ion implantation, successfully demonstrate the ability to obtain highly anisotropic nanometer-sized L10 ordered regions in thin films. XRTA has the advantage of using high brilliance x-ray undulator radiation to simultaneously induce and probe microstructural changes in real time and is shown to favorably modify the chemical order in partially-ordered FePt thin films without affecting the average ordered grain size. Heavy ion implantation has the advantage of fabricating nonequilibrium nanocomposite thin films, which in the case of Fe+ implanted Pt thin films requires lower activation energies to nucleate and grow the L10 phase thus implying lower processing temperatures. The magnetic anisotropy in these binary alloy thin films is not only tailored through the chemical ordering, but can be further influenced by an adequate choice of the capping layer. Magnetically polarizable capping layers (e.g. Pd) decrease the perpendicular magnetic anisotropy (PMA) of FePd thin films, while non-polarizable capping layers (e.g. MgO) have no effect on the PMA. Different magnetization profiles of the films obtained from x-ray resonant magnetic scattering measurements explain this change observed in the magnetic anisotropy. The magnetic domain structure in these highly anisotropic thin films is also important and influenced by the magnetic anisotropy. An analytical model shows good quantitative agreement with experiment for FePd thin films above a critical thickness, thus showing the direct correlations between chemical order, magnetic anisotropy, and magnetic domain structure in these films.
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25

Frisk, Andreas. "The Importance of Controlling Composition to Tailor the Properties of Magnetic Thin Films." Doctoral thesis, Uppsala universitet, Materialfysik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-305523.

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Many physical properties, for example structural or magnetic, of a material are directly dependent on elemental composition. Tailoring of properties through highly accurate composition control is possible in thin films. This work exemplifies such tailoring. A short review is given of the current status for research in the area of permanent magnets, focusing on rare earth element free alternatives, where FeNi in the L10 phase is a possible candidate. Epitaxial FeNi L10 thin films were successfully synthesized by magnetron sputtering deposition of monoatomic layers of Fe and Ni on HF-etched Si(001) substrates with Cu or Cu100-xNix/Cu buffers. The in-plane lattice parameter aCuNi of the Cu100-xNix buffer layer was tuned by the Ni content. Through matching of aFeNi to aCuNi, the strain state (c/a)FeNi was controlled, where c is the out-of-plane lattice parameter. The 001 reflection indicative of chemical order, as measured by resonant x-ray diffraction, was in most cases split in two peaks due to a composition modulation of Fe and Ni. This chemical disorder contributed to that the uniaxial magnetocrystalline anisotropy energy, KU≈0.35 MJ/m3, was smaller than predicted. In later experiments the composition modulation could partly be compensated for. Remaining discrepancies with respect to predicted KU values were attributed to additional disorder induced by surface roughness of the buffer layer. The interface sharpness between Fe and Ni was explored by producing epitaxial symmetric multilayers with individual layer thicknesses n = 4-48 monolayers (ML). For n ≤ 8 ML the films had pure fcc structure, with antiferromagnetic Fe layers. For n ≥ 8 ML the Fe layers relaxed to bcc structure. A combinatorial sputter chamber, which has the capability to deposit samples with composition and thickness gradients, was assembled. A model for simulation of composition and thickness across large substrates, for the conditions in this chamber, is presented. The model is verified by comparison to experimental data. Some challenges inherent in combinatorial sputtering are discussed, and two experimental studies employing the technique are presented as examples. These investigated magnetic and structural properties of Tb-Co films, with 7-95 at.% Tb, and of amorphous and crystalline ternary gradient Co-Fe-Zr films, respectively.
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26

Kumar, Deepak. "Thin film growth by combinatorial epitaxy for electronic and energy applications." Thesis, Normandie, 2019. http://www.theses.fr/2019NORMC255.

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Les oxydes de métaux de transition à structure pérovskite ABO3 présentent des degrés de liberté structurels et électroniques fortement enchevêtrés. On s'attend donc à découvrir des phases et des propriétés exotiques en agissant sur le réseau par le biais de divers stimuli externes. L'ingénierie des contraintes épitaxiales dans les couches minces d'oxydes est un moyen important d'adapter la distorsion du réseau cristallin par l'effet coopératif de Jahn Teller. En utilisant les couches minces actives PrVO3 de Jahn Teller comme système modèle, la corrélation structurelle avec le magnétisme est établie. Nous imposons différentes contraintes de contrainte épitaxiale dans les films minces PrVO3 via différents moyens, tels que, en utilisant divers substrats monocristallins disponibles dans le commerce, l'épaisseur du film, des substrats avec des orientations de surface cristallines différentes, etc. En conséquence, des phases nouvelles et cachées, absentes du composé en vrac, commencent à apparaître. Notamment, la contrainte de compression dans les films de PrVO3 améliore l'interaction de super échanges menant à une augmentation de la température de Neel antiferromagnétique, une forte anisotropie magnétique dans les films minces de PrVO3 cultivés sur des substrats SrTiO3 orientés (001), 110 et 111, sont quelques exemples
Transition-metal oxides with an ABO3 perovskite structure exhibit strongly entangled structural and electronic degrees of freedom and thus, one expects to unveil exotic phases and properties by acting on the lattice through various external stimuli. The epitaxial strain engineering in oxide thin films is an important mean to tailor the crystal lattice distortion through cooperative Jahn Teller effect. Using the Jahn Teller active PrVO3 thin films as a model system, the structural correlation with the magnetism is established. We impose different strength of epitaxial strain in PrVO3 thin films via different means, such as, using various commercially available single crystal substrates, film thickness, substrates with different crystal surface orientations, etcetera. As a result, new and hidden phases that are absent in the bulk compound, begin to appear. Namely, the compressive strain in PrVO3 films enhances the super-exchange interaction leading to an increased antiferromagnetic Neel temperature, a strong magnetic anisotropy in PrVO3 thin films grown on (001)-, (110)- and (111)-oriented SrTiO3 substrates, are few examples
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27

Ebels, Ursula. "Scanning Kerr microscopy of magnetic domains in epitaxial Fe/GaAs(001) thin film systems." Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.389827.

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28

Sinko, Michael R. "Strain Induced Double Magnetic Resonance in Thin Film Ni on MgO." Miami University / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=miami1408030230.

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29

Cooke, Michael D. "Magnetostrictive properties of polycrystalline iron cobalt films." Thesis, University of Sheffield, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.340249.

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30

Kato, T., S. Iwata, Y. Yamauchi, S. Tsunashima, K. Matsumoto, T. Morikawa, and K. Ozaki. "Planar patterned media fabricated by ion irradiation into CrPt3 ordered alloy films." American Institite of Physics, 2009. http://hdl.handle.net/2237/12635.

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31

Matthes, Patrick. "Magnetic and Magneto-Transport Properties of Hard Magnetic Thin Film Systems." Doctoral thesis, Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-192683.

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The present thesis is about the investigation of ferromagnetic thin film systems with respect to exchange coupling, magnetization reversal behavior and effects appearing in magnetic heterostructures, namely the exchange bias and the giant magnetoresistance effect. For this purpose, DC magnetron sputtered thin films and multilayers with perpendicular magnetic anisotropy were prepared on single crystalline and rigid as well as flexible amorphous substrates. The first part concentrates on magnetic data storage applications based on the combination of the concept of bit patterned media and three dimensional magnetic memory, consisting of at least two exchange decoupled ferromagnetic storage layers. Here, [Co/Pt] multilayers, revealing different magnetic anisotropies, have been applied as storage layers and as spacer material Pt and Ru was employed. By the characterization of the magnetization reversal behavior the exchange coupling in dependence of the spacer layer thickness was studied. Furthermore, with regard to the concept of bit patterned media, the layers were also grown on self-assembled silica particles, leading to an exchange decoupled single-domain magnetic dot array, which was studied by magnetic force microscope imaging and angular dependent magneto-optic Kerr effect magnetometry to evaluate the reversal mechanism and its dependence on the array dimensions, mainly the diameter of the silica particles and layer thicknesses. To complete the study, micromagnetic simulations were performed to access smaller dimensions and to investigate the dependence of intralayer as well as interlayer coupling on the magnetization reversal of the dot array with multiple storage layers. The second part focuses on the investigation of the giant magnetoresistance effect in systems with perpendicular magnetic anisotropy, where L10 -chemically ordered FePt alloys and [Co/Pt] as well as [Co/Pd] multilayers were utilized. In case of FePt, where high temperatures during the deposition are necessary to induce the chemical ordering, diffusion and alloying of the spacer material often prevent a sufficient exchange decoupling of the ferromagnetic layers. However, with Ru as spacer material a giant magnetoresistance effect could be achieved. Large improvements of the magnetoresistive behavior of such trilayer structures are presented for [Co/Pt] and [Co/Pd] multilayers, which can be deposited at room temperature not limiting the choice of spacer as well as substrate material. Furthermore, in systems consisting of one ferromagnet with perpendicular magnetic anisotropy and one ferromagnet with in-plane magnetic easy axis, a linear and almost hysteresis-free field dependence of the electrical resistance was observed and the behavior for various thickness series has been intensively studied. Finally, the corrosion resistance in dependence of the capping layer material as well as the magnetoresistance of a strained flexible pseudo-spin-valve structure is presented. In addition, in chapter 2.5.2 an experimental study of an improved crystal growth of FePt at comparable low temperatures by molecular beam epitaxy and further promoted by a surfactant mediated growth using Sb is shown. Auger electron spectroscopy as well as Rutherford backscattering spectrometry were carried out to confirm the surface segregation of Sb and magnetic characterization revealed an increase of magnetic anisotropy in comparison to reference layers without Sb
Die vorliegende Dissertation beschäftigt sich mit der Untersuchung ferromagnetischer Dünnschichtsysteme im Hinblick auf die Austauchkopplung, das Ummagnetisierungsverhalten und Effekte wie z.B. den Exchange Bias Effekt oder den Riesenmagnetwiderstandseffekt (GMR), welche in derartigen Heterostrukturen auftreten können. Die Probenpräparation erfolgte mittels DC Magnetronsputtern, wobei auf einkristallinen aber auch flexiblen sowie starren amorphen Substraten abgeschieden wurde. Im ersten Teil der Arbeit werden Untersuchungen mit dem Hintergrund einer Anwendung als magnetischer Datenträger vorgestellt. Konkret werden hier die Konzepte Bit Patterned Media (BPM) und 3D Speicher miteinander kombiniert. Letzteres Konzept basiert auf der Verwendung wenigstens zweier austauschentkoppelter ferromagnetischer Schichten, für welche [Co/Pt] Multilagen mit unterschiedlicher magnetischer Anisotropie verwendet wurden. Als Zwischenschichtmaterial diente Pt und Ru. Durch die Charakterisierung des Ummagnetisierungsverhaltens wurde die Austauschkopplung in Abhängigkeit der Zwischenschichtdicke untersucht. Darüber hinaus wurden jene Schichtstapel zur Realisierung des BPM-Konzeptes auf selbstangeordnete SiO2 Partikel mit unterschiedlichen Durchmessern aufgebracht, durch welche sich lateral austauschentkoppelte, eindomänige magnetische Nanostrukturen erzeugen lassen. Zur Untersuchung des Ummagnetisierungsverhaltens und der jeweiligen Größenabhängigkeiten (maßgeblich Durchmesser und Schichtdicke) wurden diese mittels Magnetkraftmikroskopie sowie winkelabhängiger magnetooptischer Kerr Effekt Magnetometrie untersucht. Zur weiteren Vertiefung des Verständnisses noch kleinerer Strukturgrößen erfolgten mikromagnetische Simulationen, bei denen die magnetischen Wechselwirkungen lateral (benachbarte 3D Elemente) als auch vertikal (Wechselwirkungen ferromagnetischer Schichten innerhalb eines 3D Elementes) im Interesse standen, sowie deren Auswirkungen auf das Ummagnetisierungsverhalten des gesamten Feldes. Der Fokus des zweiten Teils liegt auf der Untersuchung des Riesenmagnetwiderstandseffektes in Systemen mit senkrechter Sensitivität. Dafür sind ferromagnetische Schichten mit senkrechter magnetischer Anisotropie nötig, wobei hier die chemisch geordnete L10-Phase der FePt Legierung und [Co/Pt] sowie [Co/Pd] Multilagen Anwendung fanden. Für eine chemische Ordnung der FePt Legierung sind hohe Temperaturen während der Schichtabscheidung notwendig, welche eine hinreichende Austauschentkopplung beider ferromagnetischer Schichten meist nicht gewährleisten. Grund dafür sind einsetzende Diffusionsprozesse als auch Legierungsbildungen mit dem Zwischenschichtmaterial. In der vorliegenden Arbeit konnte der GMR Effekt daher ausschließlich mit einer Ru Zwischenschicht in FePt basierten Trilagensystemen nachgewiesen und charakterisiert werden. Enorme Verbesserungen der magnetoresistiven Eigenschaften werden im Anschluss für [Co/Pt] und vor allem [Co/Pd] Multilagen vorgestellt. Diese Schichtsysteme mit senkrechter magnetischer Anisotropie können bei Raumtemperatur präpariert werden und stellen daher keine weiteren Anforderungen an das Zwischenschichtmaterial sowie die verwendeten Substrate. Hier wurden neben Systemen mit ausschließlich senkrechter magnetischer Anisotropie auch Systeme mit gekreuzten magnetischen Anisotropien intensiv untersucht, da diese durch einen linearen und weitgehend hysteresefreien R(H) Verlauf imHinblick auf Sensoranwendungen enorme Vorteile bieten. Letztendlich wurde die Korrosionsbeständigkeit in Abhängigkeit des Deckschichtmaterials als auch die mechanische Belastbarkeit von auf flexiblen Substraten abgeschiedenen GMR-Schichtstapeln untersucht. Zusätzlich wird in Kapitel 2.5.2 eine experimentelle Studie zum Surfactant-gesteuerten Wachstum der FePt Legierung mittels Molekularstrahlepitaxie vorgestellt. Als Surfactant dient Sb, wodurch die Kristallinität bei geringer Depositionstemperatur deutlich verbessert werden konnte. Die Oberflächensegregation von Sb wurde mittels Auger Elektronenspektroskopie und Rutherford Rückstreuspektrometrie verifiziert und die Charakterisierung magnetischer Eigenschaften belegt einen Anstieg der magnetischen Anisotropieenergie im Vergleich zu Referenzproben ohne Sb
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32

Andersson, Cecilia. "Exploring the Magnetism of Ultra Thin 3d Transition Metal Films." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Universitetsbiblioteket [distributör], 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-6836.

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33

Kane, Margaret Marie. "Fabrication and characterization of perpendicular magnetic anisotropy thin-film CoCrPt grown on a Ti underlayer." Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/98555.

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Thesis: S.B., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2015.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 57-58).
CoCrPt has potential applications as a memory storage technology because of its perpendicular magnetic anisotropy (PMA) characteristics. An underlayer can be used to ensure the out-of-plane magnetization required for PMA functionalities. Ti, with a lattice constant of a = 2.95 Å can be used to encourage uniaxial c-axis growth in CoCrPt (lattice constant a ~/= 2.55 Å, dependent on exact composition). In this report, varying thicknesses of Ti (t = 0, 20, 40, 60, 70, 80, 90, 100nm) and CoCrPt (t = 50, 75, 90, 100, 125, 150nm) were sputtered onto naturally oxidized silicon substrates. Using various characterization methods, these films were investigated in order to better understand the system. The exact composition of the CoCrPt films was found to be approximately Co₆₀.₂Cr₁₆.₄Pt₂₃.₄, with a Curie temperature of about 600 °C. The addition of a Ti underlayer resulted in an increase in coercivity to approximately 1250 Oe for t > 60nm. However, switching field distribution and saturation magnetization appear to be independent of underlayer thickness. All samples show evidence of out-of-plane growth and the roughness of the films increases until it also plateaus at about t = 60nm. When CoCrPt thickness is varied on a constant Ti underlayer, the PMA properties of the materials decrease with increasing thickness due to increased disorder and potential relaxation of the lattice in thicker films. The switching field distribution shows a significant increase, implying that a thicker film has a more homogenous distribution of grain sizes. XRD peaks confirm out-of-plane growth and suggest a trend of increasing c lattice constant as the thickness of the film increases.
by Margaret Marie Kane.
S.B.
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34

Denysenkov, Vasyl. "Broadband Ferromagnetic Resonance Spectrometer : Instrument and Applications." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3602.

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This thesis compiles results of research in two mutuallydependent parts: 1) development of ferromagnetic resonance(FMR) spectrometer to study microwave properties offerromagnetic materials, and 2) characterization of new irongarnets: pulsed laser deposited Y3Fe5O12and Bi3Fe5O12films and Ce:Y3Fe5O12single crystal.

First part describes a novelBroadbandFMRSpectrometerdesigned to characterize thin ferromagneticfilms. The spectrometer uses two probeheads: one is the X-bandmicrowave reflection cavity for room temperature measurementsand the in-cryostat microstrip line probe to perform FMRexperiments in the frequency range from 50 MHz to 40 GHz. Veryuniform and stable magnetic field up to 2.4 T, temperatures 4 Kto 420 K, and continuous frequency scan performed byHP8722Dvector network analyzer provide various modes ofoperation. Both probeheads are equipped with two-circlegoniometers to ensure accurate study of magneticanisotropy.

The spectrometer was used to make express-analysis ofquality thus to optimize processing parameters of epitaxialiron garnet films grown by pulsed laser deposition (PLD).Comprehensive study of uniaxial and cubic magnetocrystallineanisotropy has been performed for Ce:Y3Fe5O12bulk crystal as well as for Y3Fe5O12and Bi3Fe5O12films grown on different substrates by PLD andreactive ion beam sputtering techniques. BroadbandFMR-spectroscopy revealed difference in spectra of domain wallresonances: instead of“soft”spin modes in filmsgrown by liquid phase epitaxy, PLD-made films show“diffuse”transformation of domains near thesaturation field. This effect indicates non-uniformity ofsaturation magnetization and field of uniaxial anisotropy inPLD-iron garnets. Spin wave resonances in comparison withuniform FMR have been studied to evaluate“localquality”of ferromagnetic films. The resonance field andFMR linewidth behavior were studied at various crystallographicdirections determined by X-ray diffraction.

FMR was used to choose PLD-made YIG films with low losses atmicrowave frequencies and to build magnetostatic surface wavesmicrowave bandpass filter. The filter was designed as a planarfilm structure with a microstrip line for transducers. It is afirst demonstration of feasibility to introduce PLD processingtechnique to magnetostatic wave technology.

Magneto-optical study of Ce:Y3Fe5O12single crystal complements results ofFMR-spectroscopy of new garnets.

Keywords:ferrites, thin films, ferromagnetic resonance,microwaves, FMR spectrometer, magnetic anisotropy,magnetostatic waves.

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35

Brombacher, Christoph. "Rapid thermal annealing of FePt and FePt/Cu thin films." Doctoral thesis, Universitätsbibliothek Chemnitz, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-64907.

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Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO2 particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to induce the phase transformation from the chemically disordered A1 phase into the chemically ordered L10 phase. The influence of the annealing temperature, annealing time and the film thickness on the ordering transformation and (001) texture evolution of FePt films with near equiatomic composition was studied. Whereas flash lamp annealed FePt films exhibit a polycrystalline morphology with high chemical L10 order, rapid thermal annealing can lead to the formation of chemically ordered FePt fifilms with (001) texture on amorphous SiO2/Si substrates. The resultant high perpendicular magnetic anisotropy and large coercivities up to 40 kOe are demonstrated. Simultaneuosly to the ordering transformation, rapid thermal annealing to temperatures exceeding 600 °C leads to a break up of the continuous FePt film into separated islands. This dewetting behavior was utilized to create regular arrays of FePt nanostructures on SiO2 particle templates with periods down to 50 nm. The addition of Cu improves the (001) texture formation and chemcial ordering for annealing temperatures T < 600 °C. In addition, the magnetic anisotropy and the coercivity of the ternary FePtCu alloy can be effectively tailored by adjusting the Cu content. The prospects of FePtCu based exchange spring media, as well as the magnetic properties of FePtCu nanostructures fabricated using e-beam and nanoimprint lithography have been investigated.
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36

Vo, Van Chi. "Epitaxial graphene on metal for new magnetic manometric systems." Phd thesis, Université de Grenoble, 2013. http://tel.archives-ouvertes.fr/tel-00829379.

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Graphene is a candidate for next generation spintronics devices exploiting its long spin transport length and high carrier mobility. Besides, when put in interaction with a ferromagnet, it may become an active building block, as suggested by recent surface science studies revealing few tenth of a Bohr magneton magnetic moments held by carbon atoms in graphene on iron, and a Rashba spin-orbit splitting reaching about 10 meV in graphene on a high atomic number element such as gold. The extent to which graphene may influence the properties, e.g. magnetic ones, of the materials contacted to it was barely addressed thus far. High quality hybrid systems composed of graphene in contact with magnetic thin layers or nanoclusters are playgrounds for exploring both aspects, the manipulation of the properties of graphene by interaction with other species, and vice versa. In graphene contacted to ultra-thin ferromagnetic layers for instance, strong graphene/ferromagnet interface effects could be employed in the view of manipulating the magnetization in the ferromagnet. The recently discovered close-to-perfect self-organization of nanoclusters on graphene, provides a way to probe magnetic interaction between clusters, possibly mediated by graphene. Three high quality hybrid systems relying on graphene prepared by chemical vapor deposition on the (111) surface of iridium have been developed under ultra-high vacuum (UHV): cobalt ultra-thin and flat films deposited on top of graphene, and intercalated at moderate temperature between graphene and its substrate, and self-organized cobalt- and iron-rich nanoclusters on the 2.5 nm-periodicity moiré between graphene and Ir(111). Prior to these systems, 10 nm-thick Ir(111) single-crystal thin films on sapphire were developed: they were latter employed as a substrate replacing bulk Ir(111) single-crystals usually employed. This new substrate opens the route to multi-technique characterizations, especially ex situ ones which were little employed thus far for studying graphene/metal systems prepared under UHV. Using a combination of in situ surface science techniques (scanning tunneling microscopy, x-ray magnetic circular dichroism, spin-polarized low-energy electron microscopy, auger electron spectroscopy, reflection high-energy electron diffraction) and ex situ probes (x-ray diffraction, transmission electron microscopy, Raman spectroscopy, MOKE magnetometry) the structural, vibrational, electronic, and magnetic properties of the three new graphene hybrid systems were characterized and confronted to first-principle calculations. Several striking features were unveiled. The interface between graphene and cobalt involves strong C-Co interactions which are responsible for a large interface magnetic anisotropy, capable of driving the magnetization out-of-the plane of the surface of an ultra-thin film in spite of the strong shape anisotropy in such films. The effect is maximized in the system obtained by intercalation between graphene and iridium, which comes naturally air-protected. Nanoclusters, on the contrary, seem to weakly interact with graphene. Small ones, comprising ca. 30 atoms each, remain super paramagnetic at 10 K, have no magnetic anisotropy, and it turns out difficult, even with 5 T fields to saturate their magnetization. Besides, the magnetic domains size seem to exceed the size of a single cluster, possibly pointing to magnetic interactions between clusters.
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37

Matthes, Patrick. "Magnetic and Magneto-Transport Properties of Hard Magnetic Thin Film Systems." Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2015. https://monarch.qucosa.de/id/qucosa%3A20376.

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The present thesis is about the investigation of ferromagnetic thin film systems with respect to exchange coupling, magnetization reversal behavior and effects appearing in magnetic heterostructures, namely the exchange bias and the giant magnetoresistance effect. For this purpose, DC magnetron sputtered thin films and multilayers with perpendicular magnetic anisotropy were prepared on single crystalline and rigid as well as flexible amorphous substrates. The first part concentrates on magnetic data storage applications based on the combination of the concept of bit patterned media and three dimensional magnetic memory, consisting of at least two exchange decoupled ferromagnetic storage layers. Here, [Co/Pt] multilayers, revealing different magnetic anisotropies, have been applied as storage layers and as spacer material Pt and Ru was employed. By the characterization of the magnetization reversal behavior the exchange coupling in dependence of the spacer layer thickness was studied. Furthermore, with regard to the concept of bit patterned media, the layers were also grown on self-assembled silica particles, leading to an exchange decoupled single-domain magnetic dot array, which was studied by magnetic force microscope imaging and angular dependent magneto-optic Kerr effect magnetometry to evaluate the reversal mechanism and its dependence on the array dimensions, mainly the diameter of the silica particles and layer thicknesses. To complete the study, micromagnetic simulations were performed to access smaller dimensions and to investigate the dependence of intralayer as well as interlayer coupling on the magnetization reversal of the dot array with multiple storage layers. The second part focuses on the investigation of the giant magnetoresistance effect in systems with perpendicular magnetic anisotropy, where L10 -chemically ordered FePt alloys and [Co/Pt] as well as [Co/Pd] multilayers were utilized. In case of FePt, where high temperatures during the deposition are necessary to induce the chemical ordering, diffusion and alloying of the spacer material often prevent a sufficient exchange decoupling of the ferromagnetic layers. However, with Ru as spacer material a giant magnetoresistance effect could be achieved. Large improvements of the magnetoresistive behavior of such trilayer structures are presented for [Co/Pt] and [Co/Pd] multilayers, which can be deposited at room temperature not limiting the choice of spacer as well as substrate material. Furthermore, in systems consisting of one ferromagnet with perpendicular magnetic anisotropy and one ferromagnet with in-plane magnetic easy axis, a linear and almost hysteresis-free field dependence of the electrical resistance was observed and the behavior for various thickness series has been intensively studied. Finally, the corrosion resistance in dependence of the capping layer material as well as the magnetoresistance of a strained flexible pseudo-spin-valve structure is presented. In addition, in chapter 2.5.2 an experimental study of an improved crystal growth of FePt at comparable low temperatures by molecular beam epitaxy and further promoted by a surfactant mediated growth using Sb is shown. Auger electron spectroscopy as well as Rutherford backscattering spectrometry were carried out to confirm the surface segregation of Sb and magnetic characterization revealed an increase of magnetic anisotropy in comparison to reference layers without Sb.
Die vorliegende Dissertation beschäftigt sich mit der Untersuchung ferromagnetischer Dünnschichtsysteme im Hinblick auf die Austauchkopplung, das Ummagnetisierungsverhalten und Effekte wie z.B. den Exchange Bias Effekt oder den Riesenmagnetwiderstandseffekt (GMR), welche in derartigen Heterostrukturen auftreten können. Die Probenpräparation erfolgte mittels DC Magnetronsputtern, wobei auf einkristallinen aber auch flexiblen sowie starren amorphen Substraten abgeschieden wurde. Im ersten Teil der Arbeit werden Untersuchungen mit dem Hintergrund einer Anwendung als magnetischer Datenträger vorgestellt. Konkret werden hier die Konzepte Bit Patterned Media (BPM) und 3D Speicher miteinander kombiniert. Letzteres Konzept basiert auf der Verwendung wenigstens zweier austauschentkoppelter ferromagnetischer Schichten, für welche [Co/Pt] Multilagen mit unterschiedlicher magnetischer Anisotropie verwendet wurden. Als Zwischenschichtmaterial diente Pt und Ru. Durch die Charakterisierung des Ummagnetisierungsverhaltens wurde die Austauschkopplung in Abhängigkeit der Zwischenschichtdicke untersucht. Darüber hinaus wurden jene Schichtstapel zur Realisierung des BPM-Konzeptes auf selbstangeordnete SiO2 Partikel mit unterschiedlichen Durchmessern aufgebracht, durch welche sich lateral austauschentkoppelte, eindomänige magnetische Nanostrukturen erzeugen lassen. Zur Untersuchung des Ummagnetisierungsverhaltens und der jeweiligen Größenabhängigkeiten (maßgeblich Durchmesser und Schichtdicke) wurden diese mittels Magnetkraftmikroskopie sowie winkelabhängiger magnetooptischer Kerr Effekt Magnetometrie untersucht. Zur weiteren Vertiefung des Verständnisses noch kleinerer Strukturgrößen erfolgten mikromagnetische Simulationen, bei denen die magnetischen Wechselwirkungen lateral (benachbarte 3D Elemente) als auch vertikal (Wechselwirkungen ferromagnetischer Schichten innerhalb eines 3D Elementes) im Interesse standen, sowie deren Auswirkungen auf das Ummagnetisierungsverhalten des gesamten Feldes. Der Fokus des zweiten Teils liegt auf der Untersuchung des Riesenmagnetwiderstandseffektes in Systemen mit senkrechter Sensitivität. Dafür sind ferromagnetische Schichten mit senkrechter magnetischer Anisotropie nötig, wobei hier die chemisch geordnete L10-Phase der FePt Legierung und [Co/Pt] sowie [Co/Pd] Multilagen Anwendung fanden. Für eine chemische Ordnung der FePt Legierung sind hohe Temperaturen während der Schichtabscheidung notwendig, welche eine hinreichende Austauschentkopplung beider ferromagnetischer Schichten meist nicht gewährleisten. Grund dafür sind einsetzende Diffusionsprozesse als auch Legierungsbildungen mit dem Zwischenschichtmaterial. In der vorliegenden Arbeit konnte der GMR Effekt daher ausschließlich mit einer Ru Zwischenschicht in FePt basierten Trilagensystemen nachgewiesen und charakterisiert werden. Enorme Verbesserungen der magnetoresistiven Eigenschaften werden im Anschluss für [Co/Pt] und vor allem [Co/Pd] Multilagen vorgestellt. Diese Schichtsysteme mit senkrechter magnetischer Anisotropie können bei Raumtemperatur präpariert werden und stellen daher keine weiteren Anforderungen an das Zwischenschichtmaterial sowie die verwendeten Substrate. Hier wurden neben Systemen mit ausschließlich senkrechter magnetischer Anisotropie auch Systeme mit gekreuzten magnetischen Anisotropien intensiv untersucht, da diese durch einen linearen und weitgehend hysteresefreien R(H) Verlauf imHinblick auf Sensoranwendungen enorme Vorteile bieten. Letztendlich wurde die Korrosionsbeständigkeit in Abhängigkeit des Deckschichtmaterials als auch die mechanische Belastbarkeit von auf flexiblen Substraten abgeschiedenen GMR-Schichtstapeln untersucht. Zusätzlich wird in Kapitel 2.5.2 eine experimentelle Studie zum Surfactant-gesteuerten Wachstum der FePt Legierung mittels Molekularstrahlepitaxie vorgestellt. Als Surfactant dient Sb, wodurch die Kristallinität bei geringer Depositionstemperatur deutlich verbessert werden konnte. Die Oberflächensegregation von Sb wurde mittels Auger Elektronenspektroskopie und Rutherford Rückstreuspektrometrie verifiziert und die Charakterisierung magnetischer Eigenschaften belegt einen Anstieg der magnetischen Anisotropieenergie im Vergleich zu Referenzproben ohne Sb.
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38

Roos, Andreas. "Growth and characterization of advanced layered thin film structures : Amorphous SmCo thin film alloys." Thesis, Uppsala universitet, Institutionen för fysik och astronomi, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-177674.

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This report describes the growth and characterization of thin amorphous samarium-cobalt alloy films. The samarium-cobalt alloy was grown by DC magnetron sputtering in the presence of an external magnetic field parallel to the thin film. The external magnetic field induces a uniaxial in-plane magnetic anisotropy in the samarium-cobalt alloy. The thin films were characterized with x-ray scattering, and the magnetic anisotropy was characterized with the magneto optic Kerr effect. The measurements showed a uniaxial in-plane magnetic anisotropy in the samarium-cobalt alloy films. It is not clear how amorphous the samples really are, but there are indications of crystalline and amorphous areas in the alloys.
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39

Vukadinovic, Nicolas. "Excitations magnétiques hautes fréquences dans des films minces à aimantation non uniforme." Habilitation à diriger des recherches, Université Paris Sud - Paris XI, 2003. http://tel.archives-ouvertes.fr/tel-00003276.

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L'étude des excitations magnétiques de faible amplitude existant dans des films minces à aimantation non uniforme dans la gamme des hautes fréquences, typiquement entre quelques dizaines de MHz et quelques dizaines de GHz, constitue le sujet de ce mémoire. Le cas idéal de films magnétiques possédant une anisotropie perpendiculaire et présentant une configuration d'équilibre de l'aimantation sous forme de rubans parallèles et périodiques est étudié en détail. Dans le cas de films à forte anisotropie perpendiculaire, les spectres théoriques de susceptibilité dynamique calculés à l'aide de modèles analytiques puis, à partir de simulations numériques 2D de micromagnétisme dynamique, font apparaître des excitations localisées soit à l'intérieur des domaines magnétiques soit à l'intérieur des parois magnétiques. Ces résultats ont été comparés de façon satisfaisante avec des résultats expérimentaux issus de mesures de résonance ferromagnétique réalisées sur des films monocristallins de grenats ferrimagnétiques. Toutefois, les largeurs de raie expérimentales associées aux excitations de parois excèdent celles calculées en utilisant le terme dissipatif de Gilbert. Dans le cas de films à faible anisotropie perpendiculaire, les spectres théoriques de susceptibilité dynamique présentent de multiples excitations magnétiques liées à la forte hétérogénéité des configurations d'équilibre de l'aimantation de type rubans faibles. Les analyses modales effectuées à partir des simulations micromagnétiques dynamiques indiquent l'existence de modes de surface et de volume localisés dans différentes régions de spins à l'intérieur du film. L'influence de différents paramètres (anisotropie perpendiculaire, épaisseur du film, champ magnétique statique) sur les principales caractéristiques des spectres (nombre de résonances, fréquences de résonance, intensités et largeurs de raie) est ensuite étudiée. Ces simulations micromagnétiques dynamiques permettent d'interpréter des spectres expérimentaux complexes de perméabilité dynamique mesurés sur des films ferromagnétiques amorphes. Quelques perspectives concernant la dynamique de l'aimantation de faible amplitude dans différents objets magnétiques sont ensuite présentées.
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40

Mukherjee, Devajyoti. "Growth and Characterization of Epitaxial Thin Films and Multiferroic Heterostructures of Ferromagnetic and Ferroelectric Materials." Scholar Commons, 2010. http://scholarcommons.usf.edu/etd/3622.

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Multiferroic materials exhibit unique properties such as simultaneous existence of two or more of coupled ferroic order parameters (ferromagnetism, ferroelectricity, ferroelasticity or their anti-ferroic counterparts) in a single material. Recent years have seen a huge research interest in multiferroic materials for their potential application as high density non-volatile memory devices. However, the scarcity of these materials in single phase and the weak coupling of their ferroic components have directed the research towards multiferroic heterostructures. These systems operate by coupling the magnetic and electric properties of two materials, generally a ferromagnetic material and a ferroelectric material via strain. In this work, horizontal heterostructures of composite multiferroic materials were grown and characterized using pulsed laser ablation technique. Alternate magnetic and ferroelectric layers of cobalt ferrite and lead zirconium titanate, respectively, were fabricated and the coupling effect was studied by X-ray stress analysis. It was observed that the interfacial stress played an important role in the coupling effect between the phases. Doped zinc oxide (ZnO) heterostructures were also studied where the ferromagnetic phase was a layer of manganese doped ZnO and the ferroelectric phase was a layer of vanadium doped ZnO. For the first time, a clear evidence of possible room temperature magneto-elastic coupling was observed in these heterostructures. This work provides new insight into the stress mediated coupling mechanisms in composite multiferroics.
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41

Filho, Mario da Silva Araújo. "Estrutura e anisotropia magnética de filmes finos Fe-Ni preparados por pulverização catódica." CNEN - Centro de Desenvolvimento da Tecnologia Nuclear, Belo Horizonte, 2011. http://www.bdtd.cdtn.br//tde_busca/arquivo.php?codArquivo=160.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico
Neste trabalho, foram investigadas as correlações entre a estrutura e as propriedades magnéticas principalmente à existência de anisotropia magnética perpendicular - de filmes policristalinos de Fe-Ni depositados sobre substrato de Si por pulverização catódica DC, em uma ampla faixa de concentração (de Fe15Ni85 até Fe80Ni20). Estudamos a influência de diferentes condições de preparação (espessura, distância alvo-substrato e temperatura do substrato) na estrutura e na textura magnética dos filmes. A composição dos filmes foi determinada por espectroscopia de fluorescência de raios x (EDS). Utilizando a difração de raios x em ângulo rasante (GIXRD), determinamos a estrutura cristalina das amostras. A espectroscopia Mössbauer de 57Fe foi empregada para a determinação das propriedades estruturais e magnéticas, e o efeito Kerr magneto-óptico (MOKE) foi utilizado como técnica adicional na obtenção de informações magnéticas sobre os filmes preparados. Nossos resultados demonstraram que, nas condições de crescimento dos filmes aqui empregadas, foi possível se obter filmes com uma forte anisotropia magnética perpendicular (inclinação média dos spins Fe de 25 em relação à normal) para toda a faixa de concentração e de espessura exploradas. Significante redução na textura magnética perpendicular só foi observada em filmes crescidos a altas temperaturas do substrato (~ 500 C).
A study of the correlation between magnetic and structural properties of FeNi thin films has been made focused on the perpendicular magnetic anisotropy exhibited by these films. The influence that different growth conditions, such as film thickness, target-substrate distance, and substrate temperature have on the structure and on the magnetic texture of FeNi films has been investigated. Polycrystalline FexNi1-x thin films were grown on Si substrates by DC sputtering within a wide range of concentration (15 x 80). The stoichiometric composition was determined by X ray fluorescence spectroscopy (EDS), and the crystalline structure was studied by grazing incidence X ray diffraction (GIXRD). 57Fe Conversion Electron Mossbauer spectroscopy (CEMS) was used to determine both structural and magnetic properties, and magneto-optic Kerr effect magnetometry (MOKE) was used for magnetic characterization of the investigated thin films. The obtained results show that it has been possible to obtain FexNi1-x thin films with a strong perpendicular magnetic anisotropy, with an average deviation of 25 from the normal to the sample surface, for all the concentration range and thicknesses studied. Only films grown at high substrate temperatures (~500 C) exhibited a significant reduction on the perpendicular magnetic anisotropy.
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42

Bilal, Janjua M. Verfasser], Gernot [Akademischer Betreuer] [Güntherodt, Markus [Akademischer Betreuer] Morgenstern, and Wolfgang [Akademischer Betreuer] Kuch. "Exchange bias in magnetic thin films and nanoparticles : study of spin glass, spin dynamics and anisotropy / M. Bilal Janjua ; Gernot Güntherodt, Markus Morgenstern, Wolfgang Kuch." Aachen : Universitätsbibliothek der RWTH Aachen, 2016. http://d-nb.info/1158599528/34.

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43

Hahlin, Anders. "Magnetism and Structure of Thin 3d Transition Metal Films : XMCD and EXAFS using Polarized Soft X-Rays." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-3407.

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44

Rigue, Josué Neroti. "Anisotropias magnéticas em filmes finos de Co: Uma análise por magnetometria de torque." Universidade Federal de Santa Maria, 2010. http://repositorio.ufsm.br/handle/1/9212.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico
By studying the magnetic behavior of materials a very important parameter to be analyzed are the constants of anisotropy. They can be associated with an effective anisotropy energy or to a more specific one as, for example, the magnetocrystalline. During the thin films deposition by magnetron sputtering, an uniaxial effective anisotropy can be induced due to the presence of a magnetic field over the sputtering guns and the relative motion of the substrate. However, several additional factors may control the anisotropy, including the film thickness, composition and substrate. In this work, two set of Co samples were grown by magnetron sputtering, with thickness ranging from 50 Å to 500 Å. The difference between the set of samples is the substrate, glass or Si(111). In order to study the magnetic anisotropy in these samples a torque magnetometer was developed. The study has shown that for both set of samples the uniaxial anisotropy, induced in the growth procedure, is the main one for the thicker samples. Above some thickness the samples present just uniaxial anisotropy, 230 Å and 400 Å for samples grown over glass and Si, respectively. Below these thicknesses, for both set of samples, the interaction with the substrate promotes the appearing of a biaxial and, less intense, triaxial anisotropies. The origin of these anisotropy terms are, probably, from magnetoelastic interaction with substrate and magnetocrystalline. Also, it was made an investigation of the surface s morphology and crystalline structures of the studied samples.
Ao se estudar o comportamento magnético dos materiais um parâmetro de grande importância a ser analisado são as constantes de anisotropia. Elas podem ser associadas à energia de anisotropia efetiva ou a anisotropias mais específicas como, por exemplo, a magnetocristalina. Na deposição de filmes finos pela técnica de "magnetron sputtering" pode-se induzir nas amostras uma anisotropia efetiva uniaxial durante a deposição, em virtude da existência do campo magnético nos canhões e do movimento do substrato sobre esses. Contudo, existem diversos outros fatores que influenciam a anisotropia, entre eles a espessura do filme, sua composição, bem como o tipo de substrato utilizado. Nesse trabalho dois conjuntos de filmes finos de Co, com espessuras de 50 à 500 Å, foram crescidos por essa técnica. Cada conjunto se diferencia pelo tipo de substrato utilizado [vidro ou Si(111)]. Para analisar a anisotropia das amostras foi construido e automatizado um magnetômetro de torque. O estudo mostrou que para os dois conjuntos a anisotropia uniaxial, induzida durante a confecção dos filmes, é predominante nas amostras de maior espessuras. Para o caso do vidro observa-se anisotropia unicamente uniaxial a partir de aproximadamente 230 Å e para o Silício em torno de 400 Å. Abaixo dessas espessuras, em ambos os casos, a interação com o substrato provocou o surgimento de um termo anisotrópico biaxial e, de forma menos intensa, de um termo triaxial. As anisotropias associadas a esses termos, e que se manifestam de forma diferente em cada caso em virtude da forma como cada substrato interage com o Co, provavelmente são de origem magnetoelástica ou magnetocristalina. Nesse estudo também foi feita uma investigação a respeito da estrutura morfológica da superfície e da estrutura cristalográfica dos filmes.
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45

Muduli, Pranaba Kishor. "Ferromagnetic thin films of Fe and Fe 3 Si on low-symmetric GaAs(113)A substrates." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2006. http://dx.doi.org/10.18452/15473.

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In dieser Arbeit werden das Wachstum mittels Molekularstrahlepitaxie und die Eigenschaften der Ferromagneten Fe und Fe_3Si auf niedrig-symmetirschen GaAs(113)A-Substraten studiert. Drei wichtige Aspekte werden untersucht: (i) Wachstum und strukturelle Charakterisierung, (ii) magnetische Eigenschaften und (iii) Magnetotransporteigenschaften der Fe und Fe_3Si Schichten auf GaAs(113)A-Substraten. Das Wachstum der Fe- und Fe_3Si-Schichten wurde bei einer Wachstumstemperatur von = bzw. 250 °C optimiert. Bei diesen Wachstumstemperaturen zeigen die Schichten eine hohe Kristallperfektion und glatte Grenz- und Oberflächen analog zu [001]-orientierten Schichten. Weiterhin wurde die Stabilität der Fe_(3+x)Si_(1-x) Phase über einen weiten Kompositionsbereich innerhalb der Fe_3Si-Stoichiometry demonstriert. Die Abhängigkeit der magnetischen Anisotropie innerhalb der Schichtebene von der Schichtdicke weist zwei Bereiche auf: einen Beresich mit dominanter uniaxialer Anisotropie für Fe-Schichten = 70 MLs. Weiterhin wird eine magnetische Anisotropie senkrecht zur Schichtebene in sehr dünnen Schichten gefunden. Der Grenzflächenbeitrag sowohl der uniaxialen als auch der senkrechten Anisotropiekonstanten, die aus der Dickenabhängigkeit bestimmt wurden, sind unabhängig von der [113]-Orientierung und eine inhärente Eigenschaft der Fe/GaAs-Grenzfläche. Die anisotrope Bindungskonfiguration zwischen den Fe und den As- oder Ga-Atomen an der Grenzfläche wird als Ursache für die uniaxiale magnetische Anisotropie betrachtet. Die magnetische Anisotropie der Fe_3Si-Schichten auf GaAs(113)A-Substraten zeigt ein komplexe Abhängigkeit von der Wachstumsbedingungen und der Komposition der Schichten. In den Magnetotransportuntersuchungen tritt sowohl in Fe(113)- als auch in Fe_3Si(113)-Schichten eine antisymmetrische Komponente (ASC) im planaren Hall-Effekt (PHE) auf. Ein phänomenologisches Modell, dass auf der Kristallsymmetrie basiert, liefert ein gute Beschreibung sowohl der ASC im PHE als auch des symmetrischen, anisotropen Magnetowiderstandes. Das Modell zeigt, dass die beobachtete ASC als Hall-Effekt zweiter Ordnung beschreiben werden kann.
In this work, the molecular-beam epitaxial growth and properties of ferromagnets, namely Fe and Fe_3Si are studied on low-symmetric GaAs(113)A substrates. Three important aspects are investigated: (i) growth and structural characterization, (ii) magnetic properties, and (iii) magnetotransport properties of Fe and Fe_3Si films on GaAs(113)A substrates. The growth of Fe and Fe_3Si films is optimized at growth temperatures of 0 and 250 degree Celsius, respectively, where the layers exhibit high crystal quality and a smooth interface/surface similar to the [001]-oriented films. The stability of Fe_(3+x)Si_(1-x) phase over a range of composition around the Fe_3Si stoichiometry is also demonstrated. The evolution of the in-plane magnetic anisotropy with film thickness exhibits two regions: a uniaxial magnetic anisotropy (UMA) for Fe film thicknesses = 70 MLs. The existence of an out-of-plane perpendicular magnetic anisotropy is also detected in ultrathin Fe films. The interfacial contribution of both the uniaxial and the perpendicular anisotropy constants, derived from the thickness-dependent study, are found to be independent of the [113] orientation and are hence an inherent property of the Fe/GaAs interface. The origin of the UMA is attributed to anisotropic bonding between Fe and As or Ga at the interface, similarly to Fe/GaAs(001). The magnetic anisotropy in Fe_3Si on GaAs(113)A exhibits a complex dependence on the growth conditions and composition. Magnetotransport measurements of both Fe(113) and Fe_3Si(113) films shows the striking appearance of an antisymmetric component (ASC) in the planar Hall effect (PHE). A phenomenological model based on the symmetry of the crystal provides a good explanation to both the ASC in the PHE as well as the symmetric anisotropic magnetoresistance. The model shows that the observed ASC component can be ascribed to a second-order Hall effect.
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46

Teggart, Brian Joseph. "Fabrication, characterisation and magneto-optical enhancement of thin film BiGa : Dy iron garnet." Thesis, Queen's University Belfast, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.287432.

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47

Vojáček, Libor. "Teoretická studie magnetické anizotropie v magnetických tunelových spojích na bázi MgO." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2021. http://www.nusl.cz/ntk/nusl-443253.

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Magnetický tunelový spoj (MTJ) je spintronická součástka komerčně používaná ve vysoce citlivých čtecích hlavách pevných disků. Počínaje rokem 2007 přispěla k udržení exponenciálního nárůstu hustoty magnetického zápisu. Kromě toho se také stala stavebním kamenem rychlé, odolné, úsporné a nevolatilní magnetické paměti s přímým přístupem (MRAM). Tento nový typ polovodičové paměti, stejně jako je tomu u čtecích hlav disků, využívá tunelové spoje založené na krystalickém oxidu hořečnatém (MgO) spolu s 3d kovovými magnetickými prvky (Fe a Co). Pro zmenšení MTJ a současné udržení dlouhodobé stability paměti proti tepelným fluktuacím je zapotřebí silná magnetická anizotropie ve směru kolmém na rozhraní kov|MgO. V této práci proto nejdříve provedeme analýzu magnetokrystalické anizotropie (MCA) kubického prostorově centrovaného Fe, Co a Ni na MgO pomocí ab initio simulací. Dále bude vyvinut program pro výpočet tvarové anizotropie, která je kromě MCA velmi podstatná, neboť v součtu dávají efektivní anizotropii. Na závěr implementujeme program pro výpočet MCA na základě poruchové teorie druhého řádu. To nám umožní dát pozorované anizotropní vlastnosti do souvislosti přímo s elektronickou strukturou systému (pásovou strukturou a hustotou stavů).
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48

Seo, Dongmin. "Alignment of micro-crystals of Mn12-acetate and direct observation of single molecules thereof." [College Station, Tex. : Texas A&M University, 2007. http://hdl.handle.net/1969.1/ETD-TAMU-2574.

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49

Drobitch, Justine L. "Fabrication and Simulation of Nanomagnetic Devices for Information Processing." VCU Scholars Compass, 2019. https://scholarscompass.vcu.edu/etd/6102.

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Abstract:
Nanomagnetic devices are highly energy efficient and non-volatile. Because of these two attributes, they are potential replacements to many currently used information processing technologies, and they have already been implemented in many different applications. This dissertation covers a study of nanomagnetic devices and their applications in various technologies for information processing – from simulating and analyzing the mechanisms behind the operation of the devices, to experimental investigations encompassing magnetic film growth for device components to nanomagnetic device fabrication and measurement of their performance. Theoretical sections of this dissertation include simulation-based modeling of perpendicular magnetic anisotropy magnetic tunnel junctions (p-MTJ) and low energy barrier nanomagnets (LBM) – both important devices for magnetic device-based information processing. First, we propose and analyze a precessionally switched p-MTJ based memory cell where data is written without any on-chip magnetic field that dissipates energy as low as 7.1 fJ. Next, probabilistic (p-) bits implemented with low energy barrier nanomagnets (LBMs) are also analyzed through simulations, and plots show that the probability curves are not affected much by reasonable variations in either thickness or lateral dimensions of the magnetic layers. Experimental sections of this dissertation comprise device fabrication aspects from the basics of material deposition to the application-based demonstration of an extreme sub-wavelength electromagnetic antenna. Magnetic tunnel junctions for memory cells and low barrier nanomagnets for probabilistic computing, in particular, require ultrathin ferromagnetic layers of uniform thickness, and non-uniform growth or variations in layer thickness can cause failures or other problems. Considerable attention was focused on developing methodologies for uniform thin film growth. Lastly, micro- and nano-fabrication methods are used to build an extreme sub-wavelength electromagnetic antenna implemented with an array of magnetostrictive nanomagnets elastically coupled to a piezoelectric substrate. The 50 pW signal measured from the approximately 250,000-nanomagnet antenna sample was 10 dB above the noise floor.
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50

Mc, Grath Oran F. K. "Structural and magnetic properties of epitaxial W/Fe/W and Gd/Fe films grown by pulsed laser deposition." Université Joseph Fourier (Grenoble), 1994. http://www.theses.fr/1994GRE10209.

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Le but de cette these est d'etudier les proprietes structurales et magnetiques des couches epitaxiees de w/fe/w et gd/fe elaborees par depot laser pulse. La technique de depot laser pulse est presentee dans le premier chapitre. La croissance des couches minces est discutee dans le deuxieme chapitre puis l'analyse des proprietes structurales des couches elaborees est presentee dans le troisieme chapitre. Une revue des proprietes magnetiques des couches ultra-minces, telle que le moment magnetique, l'anisotropie et les excitations thermiques est presentee dans le quatrieme chapitre. La determination experimentale de ces proprietes magnetiques dans les couches de w/fe/w est discutee dans le cinquieme chapitre. Le couplage interfacial dans les couches de gd/fe est analyse dans le dernier chapitre
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