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1
Pflug, Andreas. "Simulation des reaktiven Magnetron-Sputterns /." Stuttgart : Fraunhofer-IRB-Verl, 2007. http://deposit.d-nb.de/cgi-bin/dokserv?id=2938746&prov=M&dok_var=1&dok_ext=htm.
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2
Cantelli, Valentina. "Growth, structure and magnetic properties of magnetron sputtered FePt thin films." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-27631.
Full textAbstract:
The L10 FePt phase belongs to the most promising hard ferromagnetic materials for high density recording media. The main challenges for thin FePt films are: (i) to lower the process temperature for the transition from the soft magnetic A1 to the hard magnetic L10 phase, (ii) to realize c-axes preferential oriented layers independently from the substrate nature and (iii) to control layer morphology supporting the formation of FePt - L10 self-organized isolated nanoislands towards an increase of the signal-to-noise ratio.
In this study, dc magnetron sputtered FePt thin films on amorphous substrates were inve-stigated. The work is focalized on the correlation between structural and magnetic properties with respect to the influence of deposition parameters like growth mode (co-sputtering vs. layer – by - layer) and the variation of the deposition gas (Ar, Xe) or pressure (0.3 - 3 Pa). In low-pressure Ar discharges, high energetic particle impacts support vacancies formation during layer growth lowering the phase transition temperature to (320 +/- 20)°C. By reducing the particle kinetic energy in Xe discharges, highly (001) preferential oriented L10 - FePt films were obtained on a-SiO2 after vacuum annealing. L10 - FePt nano-island formation was supported by the introduction of an Ag matrix, or by random ballistic aggregation and atomic self shadowing realized by FePt depositions at very high pressure (3 Pa).
The high coercivity (1.5 T) of granular, magnetic isotropic FePt layers, deposited in Ar discharges, was measured with SQUID magnetometer hysteresis loops. For non-granular films with (001) preferential orientation the coercivity decreased (0.6 T) together with an enhancement of the out-of- plane anisotropy. Nanoislands show a coercive field close to the values obtained for granular layers but exhibit an in-plane easy axis due to shape anisotropy effects.
An extensive study with different synchrotron X-ray scattering techniques, mainly performed at the ESRF, BM-20 (ROBL-Beamline), pointed out the importance of in-situ investigations to clearly understand the kinetic mechanism of the A1 to L10 transition and ordering and to control FePt nanoclusters evolution.
3
Weber, Jörn Christian [Verfasser]. "Reaktive Abscheidung von SiOxNy-Schichten durch Puls-Magnetron-Sputtern / Jörn Christian Weber." München : Verlag Dr. Hut, 2010. http://d-nb.info/1222187760/34.
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4
Güttler, Dominik. "An Investigation of Target Poisoning during Reactive Magnetron Sputtering." Doctoral thesis, Technische Universität Dresden, 2008. https://tud.qucosa.de/id/qucosa%3A23651.
Full textAbstract:
Objective of the present work is a broad investigation of the so called "target poisoning" during magnetron deposition of TiN in an Ar/N2 atmosphere. Investigations include realtime in-situ ion beam analysis of nitrogen incorporation at the Ti sputter target during the deposition process and the analysis of particle uxes towards and from the target by means of energy resolved mass spectrometry. For experiments a planar, circular DC magnetron, equipped with a 2 inch titanium target was installed in an ultrahigh vacuum chamber which was attached to the beam line system of a 5 MV tandem accelerator. A manipulator allows to move the magnetron vertically and thereby the lateral investigation of the target surface. During magnetron operation the inert and reactive gas flow were adjusted using mass flow controllers resulting in an operating pressure of about 0.3 Pa. The argon flow was fixed, whereas the nitrogen flow was varied to realize different states of target poisoning. In a fi?rst step the mass spectrometer was used to verify and measure basic plasma properties e.g. the residual gas composition, the behavior of reactive gas partial pressure, the plasma potential and the dissociation degree of reactive gas molecules. Based on the non-uniform appearance of the magnetron discharge further measurements were performed in order to discuss the role of varying particle fluxes across the target during the poisoning process. Energy and yield of sputtered particles were analyzed laterally resolved, which allows to describe the surface composition of the target. The energy resolving mass spectrometer was placed at substrate position and the target surface was scanned by changing the magnetron position correspondingly. It was found, that the obtained energy distributions (EDF) of sputtered particles are influenced by their origin, showing signi?ficant differences between the center and the erosion zone of the target. These results are interpreted in terms of laterally different states of target poisoning, which results in a variation of the surface binding energy. Consequently the observed energy shift of the EDF indicates the metallic or already poisoned fraction on target surface. Furthermore the EDF's obtained in reactive sputtering mode are broadened. Thus a superposition of two components, which correspond to the metallic and compound fractions of the surface, is assumed. The conclusion of this treatment is an discrete variation of surface binding energy during the transition from metallic to compound target composition. The reactive gas target coverage as derived from the sputtered energy distributions is in reasonable agreement with predictions from model calculations. The target uptake of nitrogen was determined by means of ion beam analysis using the 14N(d, )12C nuclear reaction. Measurements at varying nitrogen gas flow directly demonstrate the poisoning eff?ect. The reactive gas uptake saturates at a maximum nitrogen areal density of about 1.1016 cm-2 which corresponds to the stoichiometric limit of a 3 nm TiN layer. At sufficiently low reactive gas flow a scan across the target surface discloses a pronounced lateral variation of target poisoning, with a lower areal density in the target race track compared to the target center and edge. Again the findings are reproduced by model calculations, which confirm that the balance of reactive gas injection and sputter erosion is shifted towards erosion in the race track. Accomplished computer simulations of the reactive sputtering process are similar to Berg's well known model. Though based on experimental findings the algorithm was extended to an analytical two layer model which includes the adsorption of reactive gas as well as its different kinds of implantation. A distribution of ion current density across the target diameter is introduced, which allows a more detailed characterization of the processes at the surface. Experimental results and computer simulation have shown that at sufficiently low reactive gas flow, metallic and compound fractions may exist together on the target surface, which is in contradiction to previous simulations, where a homogeneous reactive gas coverage is assumed. Based on the results the dominant mechanisms of nitrogen incorporation at different target locations and at varying reactive gas admixture were identified.Gegenstand der Arbeit ist die Untersuchung der Targetvergiftung beim reaktiven Magnetronsputtern von TiN in Argon-Sticksoff Atmosphäre. Die Untersuchungen beinhalten die Echtzeit in-situ Ionenstrahlanalyse des Stickstoffeinbaus in das Titantarget während des Depositionsprozesses sowie die Analyse der Teilchenflüsse vom – und hin zum Sputtertarget mittels energieaufgelöster Massenspektrometrie. Das Magnetron wurde in einer Vakuumkammer installiert, welche an die Beamline des 5 MV Tandembeschleunigers angeschlossen war. Die Position des Magnetrons konnte mittels eines Manipulator verändert werden, was die laterale Untersuchung der Targetoberfläche ermöglichte. Während des Magnetronbetriebes wurde der Argonfluss in die Kammer konstant gehalten, während der Stickstofffluss variiert wurde um verschiedene Ausprägungen der Targetvergiftung zu erreichen. In einem ersten Schritt wurden die Eigenschaften des Plasmas, z.B. die Zusammensetzung des Sputtergases, das Verhalten des Reaktivgaspartialdruckes, das Plasmapotenzial und der Dissoziationsgrad der Reaktivgasmoleküle im Plasma, mit dem Massenspektrometer ermittelt. Aufgrund der ungleichmäßigen Gasentladung vor dem Magnetrontarget, wurden auch lateral variierende Teilchenflüssen und eine ungleichmäßige Targetvergiftung angenommen. Die Energie und die Ausbeute von gesputterten Teilchen wurde deshalb lateral aufgelöst untersucht. Das Massenspektrometer wurde zu diesem Zweck am Ort des Substrates positioniert und die Targetoberfläche konnte gescannt werden indem die Magnetronposition verändert wurde. Die so aufgenommenen Energieverteilungen der gesputterten Teilchen zeigen eine räumliche Abhängigkeit. Teilchen die aus dem Targetzentrum stammen unterscheiden sich hinsichtlich ihrer Energie signifikant von den Teilchen die in der Target-Erosionszone gesputtert werden. Dieses Resultat zeigt die ungleichmäßige Targetvergiftung, wodurch es zu einer Veränderung der Oberflächenbindungsenergie kommt. Über die Verschiebung in der Energieverteilung lässt sich somit der Zustand der Targetoberfläche beschreiben. Diese experimentellen Ergebnisse zeigen Übereinstimmung mit den Ergebnissen der Modellrechnungen. Der Stickstoffgehalt des Targets wurde weiterhin mittels Ionenstrahlanalyse (NRA) bestimmt. Messungen bei verschiedenen Stickstoffflüssen demonstrieren direkt die Vergiftung des Targets. Die maximale Stickstoffkonzentration sättigt bei einem Wert, der dem Stickstoffgehalt in einer ca. 3 nm dicken Titannitridschicht entspricht. Bei ausreichend niedrigem Stickstofffluss zeigt die Messung quer über den Targetdurchmesser eine Variation im Stickstoffgehalt. Die Stickstoffkonzentration in der Erosionszone ist deutlich geringer als im Targetzentrum oder am Targetrand. Die Resultate wurden wiederum durch Modellrechnungen bestätigt. Die durchgeführten Computersimulationen basieren auf Sören Bergs Modell des reaktiven Sputterprozesses. Der Algorithmus wurde jedoch auf der Basis der experimentellen Ergebnisse erweitert. Das Modell beinhaltet nun Mechanismen des Reaktivgaseinbaus in das Target, wie Adsorption, Implantation und Recoilimplantation. Des Weiteren wurde die Ionenstromverteilung als Funktion des Targetdurchmessers in das Modell aufgenommen, was eine detailliertere Beschreibung des Prozesses ermöglicht. Die experimentellen Ergebnisse und die Resultate der Computersimulation zeigen, dass bei niedrigen Reaktivgasflüssen metallische und vergiftete Bereiche auf der Targetoberfläche gemeinsam existieren. Das ist im Widerspruch zu älteren Simulationen, in denen von einer homogenen Targetbedeckung durch das Reaktivgas ausgegangen wird. Basierend auf den Ergebnissen wurden die dominierenden Mechanismen des Reaktivgaseinbaus in das Sputtertarget, in Abhängigkeit von der Position und von der Sputtergaszusammensetzung, identifiziert.
5
Güttler, Dominik. "An Investigation of Target Poisoning during Reactive Magnetron Sputtering." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2009. http://nbn-resolving.de/urn:nbn:de:bsz:14-ds-1240493527858-26662.
Full textAbstract:
Objective of the present work is a broad investigation of the so called "target poisoning" during magnetron deposition of TiN in an Ar/N2 atmosphere. Investigations include realtime in-situ ion beam analysis of nitrogen incorporation at the Ti sputter target during the deposition process and the analysis of particle uxes towards and from the target by means of energy resolved mass spectrometry. For experiments a planar, circular DC magnetron, equipped with a 2 inch titanium target was installed in an ultrahigh vacuum chamber which was attached to the beam line system of a 5 MV tandem accelerator. A manipulator allows to move the magnetron vertically and thereby the lateral investigation of the target surface. During magnetron operation the inert and reactive gas flow were adjusted using mass flow controllers resulting in an operating pressure of about 0.3 Pa. The argon flow was fixed, whereas the nitrogen flow was varied to realize different states of target poisoning. In a fi?rst step the mass spectrometer was used to verify and measure basic plasma properties e.g. the residual gas composition, the behavior of reactive gas partial pressure, the plasma potential and the dissociation degree of reactive gas molecules. Based on the non-uniform appearance of the magnetron discharge further measurements were performed in order to discuss the role of varying particle fluxes across the target during the poisoning process. Energy and yield of sputtered particles were analyzed laterally resolved, which allows to describe the surface composition of the target. The energy resolving mass spectrometer was placed at substrate position and the target surface was scanned by changing the magnetron position correspondingly. It was found, that the obtained energy distributions (EDF) of sputtered particles are influenced by their origin, showing signi?ficant differences between the center and the erosion zone of the target. These results are interpreted in terms of laterally different states of target poisoning, which results in a variation of the surface binding energy. Consequently the observed energy shift of the EDF indicates the metallic or already poisoned fraction on target surface. Furthermore the EDF's obtained in reactive sputtering mode are broadened. Thus a superposition of two components, which correspond to the metallic and compound fractions of the surface, is assumed. The conclusion of this treatment is an discrete variation of surface binding energy during the transition from metallic to compound target composition. The reactive gas target coverage as derived from the sputtered energy distributions is in reasonable agreement with predictions from model calculations. The target uptake of nitrogen was determined by means of ion beam analysis using the 14N(d, )12C nuclear reaction. Measurements at varying nitrogen gas flow directly demonstrate the poisoning eff?ect. The reactive gas uptake saturates at a maximum nitrogen areal density of about 1.1016 cm-2 which corresponds to the stoichiometric limit of a 3 nm TiN layer. At sufficiently low reactive gas flow a scan across the target surface discloses a pronounced lateral variation of target poisoning, with a lower areal density in the target race track compared to the target center and edge. Again the findings are reproduced by model calculations, which confirm that the balance of reactive gas injection and sputter erosion is shifted towards erosion in the race track. Accomplished computer simulations of the reactive sputtering process are similar to Berg's well known model. Though based on experimental findings the algorithm was extended to an analytical two layer model which includes the adsorption of reactive gas as well as its different kinds of implantation. A distribution of ion current density across the target diameter is introduced, which allows a more detailed characterization of the processes at the surface. Experimental results and computer simulation have shown that at sufficiently low reactive gas flow, metallic and compound fractions may exist together on the target surface, which is in contradiction to previous simulations, where a homogeneous reactive gas coverage is assumed. Based on the results the dominant mechanisms of nitrogen incorporation at different target locations and at varying reactive gas admixture were identifiedGegenstand der Arbeit ist die Untersuchung der Targetvergiftung beim reaktiven Magnetronsputtern von TiN in Argon-Sticksoff Atmosphäre. Die Untersuchungen beinhalten die Echtzeit in-situ Ionenstrahlanalyse des Stickstoffeinbaus in das Titantarget während des Depositionsprozesses sowie die Analyse der Teilchenflüsse vom – und hin zum Sputtertarget mittels energieaufgelöster Massenspektrometrie. Das Magnetron wurde in einer Vakuumkammer installiert, welche an die Beamline des 5 MV Tandembeschleunigers angeschlossen war. Die Position des Magnetrons konnte mittels eines Manipulator verändert werden, was die laterale Untersuchung der Targetoberfläche ermöglichte. Während des Magnetronbetriebes wurde der Argonfluss in die Kammer konstant gehalten, während der Stickstofffluss variiert wurde um verschiedene Ausprägungen der Targetvergiftung zu erreichen. In einem ersten Schritt wurden die Eigenschaften des Plasmas, z.B. die Zusammensetzung des Sputtergases, das Verhalten des Reaktivgaspartialdruckes, das Plasmapotenzial und der Dissoziationsgrad der Reaktivgasmoleküle im Plasma, mit dem Massenspektrometer ermittelt. Aufgrund der ungleichmäßigen Gasentladung vor dem Magnetrontarget, wurden auch lateral variierende Teilchenflüssen und eine ungleichmäßige Targetvergiftung angenommen. Die Energie und die Ausbeute von gesputterten Teilchen wurde deshalb lateral aufgelöst untersucht. Das Massenspektrometer wurde zu diesem Zweck am Ort des Substrates positioniert und die Targetoberfläche konnte gescannt werden indem die Magnetronposition verändert wurde. Die so aufgenommenen Energieverteilungen der gesputterten Teilchen zeigen eine räumliche Abhängigkeit. Teilchen die aus dem Targetzentrum stammen unterscheiden sich hinsichtlich ihrer Energie signifikant von den Teilchen die in der Target-Erosionszone gesputtert werden. Dieses Resultat zeigt die ungleichmäßige Targetvergiftung, wodurch es zu einer Veränderung der Oberflächenbindungsenergie kommt. Über die Verschiebung in der Energieverteilung lässt sich somit der Zustand der Targetoberfläche beschreiben. Diese experimentellen Ergebnisse zeigen Übereinstimmung mit den Ergebnissen der Modellrechnungen. Der Stickstoffgehalt des Targets wurde weiterhin mittels Ionenstrahlanalyse (NRA) bestimmt. Messungen bei verschiedenen Stickstoffflüssen demonstrieren direkt die Vergiftung des Targets. Die maximale Stickstoffkonzentration sättigt bei einem Wert, der dem Stickstoffgehalt in einer ca. 3 nm dicken Titannitridschicht entspricht. Bei ausreichend niedrigem Stickstofffluss zeigt die Messung quer über den Targetdurchmesser eine Variation im Stickstoffgehalt. Die Stickstoffkonzentration in der Erosionszone ist deutlich geringer als im Targetzentrum oder am Targetrand. Die Resultate wurden wiederum durch Modellrechnungen bestätigt. Die durchgeführten Computersimulationen basieren auf Sören Bergs Modell des reaktiven Sputterprozesses. Der Algorithmus wurde jedoch auf der Basis der experimentellen Ergebnisse erweitert. Das Modell beinhaltet nun Mechanismen des Reaktivgaseinbaus in das Target, wie Adsorption, Implantation und Recoilimplantation. Des Weiteren wurde die Ionenstromverteilung als Funktion des Targetdurchmessers in das Modell aufgenommen, was eine detailliertere Beschreibung des Prozesses ermöglicht. Die experimentellen Ergebnisse und die Resultate der Computersimulation zeigen, dass bei niedrigen Reaktivgasflüssen metallische und vergiftete Bereiche auf der Targetoberfläche gemeinsam existieren. Das ist im Widerspruch zu älteren Simulationen, in denen von einer homogenen Targetbedeckung durch das Reaktivgas ausgegangen wird. Basierend auf den Ergebnissen wurden die dominierenden Mechanismen des Reaktivgaseinbaus in das Sputtertarget, in Abhängigkeit von der Position und von der Sputtergaszusammensetzung, identifiziert
6
Dietzel, Yvette. "Beschichtung von textilen Flächen mit den PVD-Technologien reaktives Vakuumbogen-Verdampfen und reaktives Magnetron-Sputtern : PVD-Beschichtung von textilen Flächen." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2004. http://nbn-resolving.de/urn:nbn:de:swb:14-1103790814484-00373.
Full textAbstract:
Gegenstand der wissenschaftlichen Arbeit ist der technologische Nachweis für die Erzeugbarkeit haftfester metallischer und keramischer Schichten auf textilen Flächengebilden mit den PVD-Technologien reaktives Magnetron-Sputtern und reaktives Vakuumbogen-Verdampfen. Basis für die Realisierung der experimentellen Untersuchungen sind sowohl vorhandene industrielle PVD-Beschichtungsanlagen, die im Batchbetrieb arbeiten, als auch Rollcoater als Bindeglied zwischen einer Labor- und einer Industrieanlage. Kern des Vorhabens sind umfangreiche Batchbeschichtungen auf Basis einer breit angelegten Experimentalmatrix bezüglich Substrat- und Schichtauswahl. Gängige Targetmaterialien sind Kupfer, Aluminium und Silber. Um zu zeigen, dass über das thermische Bedampfen hinaus neue Schichten und Schichtsysteme auf textilen Faserstoffen abgeschieden werden können, wurden zusätzlich die Targetmaterialien Titan und Zirkonium in die Untersuchungen einbezogen. Zur Herstellung sowohl metallischer als auch keramischer Schichten wird neben den technologischen Parametern Beschichtungszeit und Schichtmaterial der Reaktivgasfluss variiert. Als Substrate kamen zwei leichtgewichtige PA 6.6-Gewebe mit unterschiedlicher Bindung, ein kalanderverfestigter Vliesstoff aus PES und ein Spinnvliesstoff aus Kern-Mantel-Fasern mit einem PA 6 Mantel zum Einsatz. Zur Verbesserung der Schichthaftungen wurden Versuche zur Vorbehandlung mittels Plasmabehandlung in Argon und Sauerstoff, mit Gasphasenfluorierung sowie HMDSO-Behandlung mit einem PA 6.6-Gewebe durchgeführt. Im Anschluss an die Vorbehandlung wurden die Proben mit Titan und Titannitrid metallisiert. Die Charakterisierung der Substrat-Schicht-Verbunde erfolgt hinsichtlich - der chemischen Zusammensetzungen der Schichten mittels ESCA (Electron Spectroscopy for Chemical Analysis), - der Schichtstrukturen und Fasermorphologien mittels Rasterelektronenmikroskopie, - der E-Moduln an Referenzprobekörpern aus Edelstahl mittels Härtemessung, - der Schichthaftungen durch Waschversuche, Martindale-Scheuertest, Peel-Test und - der funktionellen Schichteigenschaften wie Oberflächenwiderstände, elektromagnetische Schirmdämpfung, Wärmedämmeigenschaften Im Ergebnis der experimentellen Untersuchungen werden grundlegende Erkenntnisse zum Einfluss der PVD-Technologien und der Prozessparameter auf genannte Schicht- und Fasereigenschaften aufgezeigt. Des Weiteren werden die Zusammenhänge zwischen Schichtstruktur, Fasermorphologie und Schichthaftung dargelegt. Aus den Ergebnissen werden Schlussfolgerungen für eine gezielte industrielle Anwendung und Vorschläge für weiterführende wissenschaftliche Arbeiten abgeleitet. Die PVD-Verfahren werden bezüglich ihrer Eignung für die Textilbeschichtung bewertetSubject of the scientific study is the technological proof for the possibility to generate well adherent metallic and ceramic layers on textile fabrics with the PVD technologies reactive magnetron sputtering and reactive arc evaporation. Basis for the experimental investigations were both an industrial PVD coating device of the batch-type and a roll-coater which is a connective link between a laboratory and an industrial coating device. Extensive batch coatings on basis of a broadly applied experimental matrix in terms of the choice of the substrate and layer material are basis of the project. Usual target materials were copper, aluminium and silver. Additionally, the target materials titanium and zirconium were included in the investigations in order to show that new layers and layer systems can be deposited on textile fabrics by means of the investigated PVD technologies in comparison with thermal evaporation. Apart from the technological parameters coating time and layer material, the reactive gas flow were varied to deposit both metallic and ceramic layers. Substrates used in this study were lightweight Pa 6.6 fabrics with different weaves of the fabric, a calender bonded nonwoven of PES and a spunbonded nonwoven consisting of sheath-core fibers of PES (sheath) and Pa 6 (core). In order to improve the adhesion of layers, different pretreatments of the PA 66 fabric were carried out by means of plasma treatment with argon and oxygen, gas phase fluorination and treatment with HMDSO respectively. Subsequently, the pretreated samples were metallized with titanium and titanium nitride. The characterisation of the substrate layer combinations were carried out regarding - the chemical compositions of the layers by means of ESCA (Electron Spectroscopy for Chemical Analysis), - the layer structures and fiber morphologies by means of raster electron microscopy, - the modulus of elasticity on reference specimens consisting of stainless steel by means of hardness measurement, - the layer adhesion by wash tests, Martindale abrasion test, peel tests and - the functional layer characteristics such as surface resistances, electromagnetic shielding, heat insulating characteristics In the result of the experimental investigations, extensive knowledge to the influence of the PVD technologies and process parameters on layer and fiber characteristics are presented. Furthermore, the correlation of layer structure, fiber morphology and layer adhesion are explained. Conclusions for a selective industrial application and suggestions for further scientific investigations are derived from the results. The PVD procedures are evaluated concerning their suitability for the coating of textiles
7
Dießelberg, Marc [Verfasser]. "Herstellung von reibungsarmen amorphen Kohlenstoffschichten mittels reaktivem Magnetron-Sputtern und Analyse deren tribologischer Eigenschaften / Marc Dießelberg." Aachen : Shaker, 2007. http://d-nb.info/1166511634/34.
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8
Vogel, Michael [Verfasser]. "Herstellung von Aluminiumnitrid Dünnschichten mittels Magnetron Sputtern auf Diamant für potentielle Pseudo-Surface-Acoustic-Wave-Anwendungen / Michael Vogel." Siegen : Universitätsbibliothek der Universität Siegen, 2016. http://d-nb.info/1119808421/34.
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9
Kaune, Gunar. "Röntgenografische Charakterisierung von Indium-Zinn-Oxid-Dünnschichten." Master's thesis, Universitätsbibliothek Chemnitz, 2006. http://nbn-resolving.de/urn:nbn:de:swb:ch1-200600032.
Full textAbstract:
Mittels reaktivem Magnetron-Sputtern hergestellte Indium-Zinn-Oxid-Dünnschichten
wurden mit den Methoden der Röntgendiffraktometrie und Röntgenreflektometrie charakterisiert.
Es konnte gezeigt werden, dass die Wahl des Arbeitspunktes bei der Schichtabscheidung
erheblichen Einfluss auf Kristallitorientierung, Gitterkonstante und Größe der Schichtspannung hat.
Zusätzlich wurden mittels des Langford-Verfahrens Korngröße und Mikrospannungen bestimmt.
Im Rahmen der röntgenografischen Spannungsmessung zeigten sich nichtlineare Verläufe der
Dehnung über sin²Ψ, die mit dem Kornwechselwirkungsmodell nach Vook und Witt
erklärt werden.
10
Neubert, Marcel. "Die Rolle des Sauerstoffanteils in Titandioxid bei Tantal-Dotierung zur Verwendung als transparentes leitfähiges Oxid." Doctoral thesis, Universitätsbibliothek Chemnitz, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-197922.
Full textAbstract:
Im Fokus der vorliegenden Arbeit lag die Untersuchung polykristalliner TiO2:Ta-Schichten, hergestellt mittels Gleichstrom-Magnetron-Sputtern durch Verwendung reduzierter keramischer Targets und anschließender thermischer Nachbehandlung im Vakuum der zunächst nichtleitfähigen amorphen Precursorschichten. Es wurden die physikalischen Zusammenhänge, welche die strukturellen, elektrischen und optischen Eigenschaften der kristallinen TiO2:Ta-Schichten beeinflussen analysiert und dabei eine empfindliche Abhängigkeit vom Sauerstofffluss während der Abscheidung festgestellt. Es zeigte sich, dass die Verringerung der kinetischen Energie der Plasmateilchen beim Magnetron-Sputtern durch die Erhöhung des Gesamtdruckes vorteilhaft ist, um das Wachstum des gegenüber Rutil besser leitfähigen Anatas in Verbindung mit dem für niedrige Widerstände notwendigen Sauerstoffdefizit zu realisieren. Bei einem Gesamtdruck von 2 Pa abgeschiedene polykristalline TiO2:Ta-Schichten haben einen spezifischen Widerstand von 1,5·10-3 Ωcm, eine hohe Ladungsträgermobilität (≈8 cm2V-1s-1) und einen geringen Extinktionskoeffizienten von 0,006. Die Abhängigkeit des elektrischen Widerstandes vom Sauerstoffdefizit in der TiO2:Ta-Schicht wurde unter dem Gesichtspunkt der Ladungsträgeraktivierung sowie der Bildung von Ti-Fehlstellen diskutiert, welche vermutlich zur Kompensation und Lokalisierung von freien Elektronen beitragen. Darüber hinaus wurde zur effizienteren Gestaltung der thermischen Nachbehandlung die konventionelle Vakuumtemperung erstmalig erfolgreich durch die Blitzlampentemperung ersetztThe work is focused on understanding the physical processes responsible for the modification of the structural, electrical and optical properties of polycrystalline TiO2:Ta films formed by vacuum annealing of initially not conductive amorphous films deposited by direct current magnetron sputtering. It is shown that the oxygen deficiency of amorphous and annealed TiO2:Ta films, respectively, is critical to achieve low resistivity and high optical transmittance of the crystalline films. Increasing the total pressure during magnetron sputter deposition is shown to be beneficial to achieve the desired oxygen deficient anatase growth, which is discussed in terms of energetic particle bombardment. Polycrystalline anatase TiO2:Ta films of low electrical resistivity (1,5·10-3 Ωcm), high free electron mobility (≈8 cm2V-1s-1), and low extinction (0,006) are obtained in this way at a total pressure of 2 Pa. The dependence of the polycrystalline film electrical properties on the oxygen content is discussed in terms of Ta dopant electrical activation as well as transport limiting processes taking into account the formation of Ti-vacancies. In addition, the conventional vacuum annealing has been successfully substituted by the flash lamp annealing in the millisecond range
11
Fahlteich, John. "Transparente Hochbarriereschichten auf flexiblen Substraten." Doctoral thesis, Universitätsbibliothek Chemnitz, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-64512.
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Die vorliegende Dissertation befasst sich mit der Bewertung eines Mehrfachschichtmodells für Permeationsbarrieren auf Basis einer detaillierten Charakterisierung der zugrunde liegenden Einzelschichten. Diese sind reaktiv gesputterte Oxidschichten als Barriereschicht und mittels Magnetron-PECVD abgeschiedene siliziumhaltige Plasmapolymerschichten zur Verwendung als Zwischenschicht. Zunächst werden die verschiedenen gesputterten Oxidschichten charakterisiert und verglichen. Die untersuchten Materialien sind Zinkoxid, Siliziumoxid, Zink-Zinn-Oxid, Aluminiumoxid und Titanoxid. Die wirkenden Permeationsmechanismen und die Ursachen für teils deutliche Unterschiede zwischen verschiedenen Materialien werden diskutiert. Während die Sauerstoffpermeation immer durch Punktdefekte in den Schichten bestimmt wird, muss bei der Wasserdampfpermeation von weiteren Permeationsmechanismen ausgegangen werden. Am Beispiel des Zink-Zinn-Oxids und des Aluminiumoxids wird anschließend die Abhängigkeit der Permeationseigenschaften von wesentlichen Prozessparametern wie Sputterleistung, Prozessdruck oder reaktiver Arbeitspunkt untersucht. Im zweiten Teil der Arbeit werden die Plasmapolymerschichten hinsichtlich ihrer Struktur- und Permeationseigenschaften charakterisiert und mit gesputtertem Siliziumoxid verglichen. Die Abhängigkeit der Permeationseigenschaften vom Kohlenstoffgehalt in den Schichten wird untersucht. Anhand der gewonnenen Ergebnisse werden abschließend sowohl die Sputterschichten als auch die mittels Magnetron-PECVD abgeschiedenen Schichten hinsichtlich ihrer Eignung für ein Barrieremehrfachschichtsystem bewertetThe aim of this PhD-thesis is to evaluate a concept for a multilayer permeation barrier by a detailed characterization of the different constituent of the layer stack. The multilayer concept is based on reactively sputtered permeation barrier layers and an interlayer that is deposited by using a magnetron based plasma enhanced chemical vapor deposition (Magnetron-PECVD) process. In the first part of this thesis, different sputtered oxide layers are characterized and compared regarding their structural and surface properties as well as their water vapor and oxygen permeability. These oxide layers include the materials zinc oxide, silicon oxide, zinc-tin oxide, aluminum oxide and titanium oxide. The permeation mechanisms and reasons for significant differences in the water vapor and oxygen transmission rates in the different materials are evaluated and discussed. Oxygen permeation thereby is always dominated by defects in the layers. In contrast to that, additional permeation mechanisms can be assumed for water vapor permeation. The dependence of the gas permeation on sputter process parameters like plasma power, process pressure and reactive sputtering mode is evaluated for zinc-tin oxide and aluminum oxide layers. In the second part of this thesis, plasma polymer layers that are deposited using the Magnetron-PECVD process are characterized regarding their structure and surface roughness. Their water vapor and oxygen permeability is compared to the permeation through reactively sputtered silicon oxide layers. The dependence of the gas permeation on the atomic composition, in particular on the carbon concentration, is evaluated. Finally, both the sputtered oxide layers and the Magnetron-PECVD plasma polymer layers are evaluated regarding their usability in a multilayer stack for high permeation barrier applications
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Glöß, Daniel. "Einfluss von Beschichtungsparametern auf den Teilchen- und Energiestrom zum Substrat und Auswirkungen auf ausgewählte Eigenschaften von Titanoxidschichten beim reaktiven Puls-Magnetron-Sputtern." Doctoral thesis, Universitätsbibliothek Chemnitz, 2007. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200701192.
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Diese Dissertation befasst sich mit den Plasmaeigenschaften und dem Schichtbildungsprozess bei der Titanoxidbeschichtung mit dem reaktiven Puls-Magnetron-Sputterverfahren. Insbesondere werden die Vorgänge, die zu einer vermehrt oder vermindert starken Kristallinität und photokatalytischen Aktivität der Schichten führen, untersucht und die Verflechtungen mit den Beschichtungsbedingungen analysiert. Es werden Untersuchungen zur Messung der sich während der Beschichtung einstellenden Substrattemperatur, zur Messung des auf das Substrat einfallenden integralen Ionenstroms sowie zur Energieverteilung positiver und negativer Ionen vorgestellt. Zu den wichtigsten Erkenntnissen dieser Untersuchungen zählt, dass bei Nutzung des Pulspaket- bzw. des Bipolar-Pulsmodus bei Rechteck-Magnetrons eine um etwa Faktor zwei stärkere Substraterwärmung auftritt als bei Nutzung des Unipolar-Pulsmodus. Das ist auf einen höheren Ionenstrom auf das Substrat bei gleichzeitig höherer Selbstbiasspannung zurückzuführen, was insgesamt zu einem deutlich intensiveren Bombardement des Substrats mit Ionen führt. Durch Vergleich mit den Eigenschaften von DC-Plasmen konnte gezeigt werden, dass die unterschiedliche Lage der Anode relativ zum Magnetron-Magnetfeld die primäre Ursache für die gefundenen Unterschiede ist. Der Titanoxid-Beschichtungsprozess wurde umfassend untersucht und dabei die Abhängigkeiten der Kristallinität und der Schichteigenschaften von Substrattemperatur, Beschichtungsrate und von dem während der Beschichtung auftretenden Ionenbombardement aufgezeigt. Eine wichtiges Resultat ist, dass durch Anwendung eines intensiven Ionenbombardements des Beschichtungsplasmas die für kristallines Schichtwachstum erforderliche Substrattemperatur sinkt. Das wird durch Nutzung des Pulspaket- bzw. des Bipolar-Pulsmodus anstatt des Unipolar-Pulsmodus sowie durch Wahl eines reaktiveren Arbeitspunkts erreicht. Insgesamt konnte anhand der Untersuchungen der Parameterbereich, in dem die Abscheidung polykristalliner Titanoxidschichten möglich ist, in Richtung niedriger Substrattemperaturen und dünner Schichten ermittelt werdenIn this dissertation, the plasma characteristics and the layer forming process during the titanium oxide deposition with the reactive pulse magnetron sputtering method are investigated. In particular, the procedures which lead to a higher or lower crystallinity and photocatalytic activity are examined and the connections with the coating conditions are analyzed. Investigations are presented concerning the maximum substrate temperature during deposition, the integral ion current onto the substrate as well as the ion energy distribution function of positive and negative ions. One of the most important findings is that when using rectangular magnetrons in the pulse packet mode or in the bipolar pulse about to factor two stronger substrate heating arises in comparison to the unipolar pulse mode. That is due to a higher ion current onto the substrate and a higher self bias potential which leads altogether to a significantly higher ion bombardment of the substrate. It could be shown by comparison with the characteristics of DC plasmas that the different configuration of the anode relative to the magnetic field of the magnetrons is the primary cause for the differences. The titanium oxide coating process was comprehensively examined. Layer crystallinity and layer properties could be related to substrate temperature, deposition rate and ion bombardment during deposition. An important result is that by application of an intensive ion bombardment the substrate temperature necessary for crystalline layer growth decreases. This can be achieved by using the pulse packet or the bipolar pulse mode instead of the unipolar pulse mode as well as by choice of a more reactive working point. All in all, the parameter range in which is it possible to deposit polycrystalline titanium oxide layers could be determined toward low substrate temperatures and small layer thickness
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Neubert, Marcel. "Die Rolle des Sauerstoffanteils in Titandioxid bei Tantal-Dotierung zur Verwendung als transparentes leitfähiges Oxid." Doctoral thesis, Helmholtz-Zentrum Dresden-Rossendorf, 2014. https://monarch.qucosa.de/id/qucosa%3A20408.
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Im Fokus der vorliegenden Arbeit lag die Untersuchung polykristalliner TiO2:Ta-Schichten, hergestellt mittels Gleichstrom-Magnetron-Sputtern durch Verwendung reduzierter keramischer Targets und anschließender thermischer Nachbehandlung im Vakuum der zunächst nichtleitfähigen amorphen Precursorschichten. Es wurden die physikalischen Zusammenhänge, welche die strukturellen, elektrischen und optischen Eigenschaften der kristallinen TiO2:Ta-Schichten beeinflussen analysiert und dabei eine empfindliche Abhängigkeit vom Sauerstofffluss während der Abscheidung festgestellt. Es zeigte sich, dass die Verringerung der kinetischen Energie der Plasmateilchen beim Magnetron-Sputtern durch die Erhöhung des Gesamtdruckes vorteilhaft ist, um das Wachstum des gegenüber Rutil besser leitfähigen Anatas in Verbindung mit dem für niedrige Widerstände notwendigen Sauerstoffdefizit zu realisieren.
Bei einem Gesamtdruck von 2 Pa abgeschiedene polykristalline TiO2:Ta-Schichten haben einen spezifischen Widerstand von 1,5·10-3 Ωcm, eine hohe Ladungsträgermobilität (≈8 cm2V-1s-1) und einen geringen Extinktionskoeffizienten von 0,006.
Die Abhängigkeit des elektrischen Widerstandes vom Sauerstoffdefizit in der TiO2:Ta-Schicht wurde unter dem Gesichtspunkt der Ladungsträgeraktivierung sowie der Bildung von Ti-Fehlstellen diskutiert, welche vermutlich zur Kompensation und Lokalisierung von freien Elektronen beitragen.
Darüber hinaus wurde zur effizienteren Gestaltung der thermischen Nachbehandlung die konventionelle Vakuumtemperung erstmalig erfolgreich durch die Blitzlampentemperung ersetzt.:1 Einleitung
2 Grundlagen
2.1 Elektrische Leitfähigkeit
2.2 Dielektrische Funktion und optische Eigenschaften
2.3 Transparente leitfähige Oxide
2.3.1 Elektrische Eigenschaften
2.3.2 Optische Eigenschaften
2.4 Titandioxid
2.4.1 Eigenschaften und Herstellung
2.4.2 Transparentes leitfähiges Anatas
3 Experimentelle Methoden
3.1 Grundlagen der Schichtabscheidung mittels Magnetron-Sputtern
3.1.1 Wechselwirkungsprozesse im Magnetronplasma
3.1.2 Kinetik der Teilchen im Plasma
3.1.3 Schichtbildung
3.1.4 Teilreaktive Abscheidung von TiO2
3.2 Versuchsaufbau und Durchführung
3.2.1 Magnetronsputteranlage
3.2.2 Durchführung der Beschichtung
3.3 Thermische Nachbehandlung
3.3.1 Ultra-Kurzzeittemperung kleiner 20 ms mittels Blitzlampen
4 Charakterisierungsmethoden
4.1 Schichtzusammensetzung und -struktur
4.1.1 Rutherford-Rückstreu-Spektrometrie
4.1.2 Röntgenbeugung
4.1.3 Transmissionselektronenmikroskopie
4.1.4 Röntgen-Nahkanten-Absorptions-Spektroskopie
4.1.5 Positronen-Annihilations-Spektroskopie
4.2 Elektrische Eigenschaften
4.2.1 Hall-Messung
4.2.2 4-Spitzen-Methode
4.3 Optische Eigenschaften
4.3.1 Spektrale Photometrie
4.3.2 Spektrale Ellipsometrie
4.3.3 Modellanalyse
5 Ergebnisse/Diskussion
5.1 Synthese von Sauerstoff-verarmtem Anatas
5.1.1 Abscheidung des amorphen Precursormaterials
5.1.2 Thermisch induzierte Kristallisation mittels Ofentemperung
5.1.3 Diskussion
5.1.4 Schlussfolgerungen
5.2 Elektrische Eigenschaften TiO2-basierter TCO
5.2.1 Ladungsträgeraktivierung und elektrischer Transport
5.2.2 Einschub zur Morphologie der Anatasschichten
5.2.3 Diskussion
5.2.4 Schlussfolgerungen
5.3 Optische Eigenschaften TiO2-basierter TCO
5.3.1 Einfluss des Temperprozesses
5.3.2 Bestimmung der dielektrischen Funktion und optischer Materialeigenschaften mittels Modellanalyse
5.3.3 Abhängigkeit der optischen Eigenschaften von der Ladungsträgerdichte
5.3.4 Diskussion
5.3.5 Schlussfolgerungen
5.4 Ultra-Kurzzeit-Kristallisation mittels Blitzlampen
5.4.1 Korrelation zwischen Abscheidungs - und FLA-Prozess
5.4.2 Einschub zur Kristallisationskinetik
5.4.3 Morphologie
5.4.4 Optoelektronische Eigenschaften
5.4.5 Diskussion
5.4.6 Schlussfolgerungen
6 Zusammenfassung & AusblickThe work is focused on understanding the physical processes responsible for the modification of the structural, electrical and optical properties of polycrystalline TiO2:Ta films formed by vacuum annealing of initially not conductive amorphous films deposited by direct current magnetron sputtering. It is shown that the oxygen deficiency of amorphous and annealed TiO2:Ta films, respectively, is critical to achieve low resistivity and high optical transmittance of the crystalline films. Increasing the total pressure during magnetron sputter deposition is shown to be beneficial to achieve the desired oxygen deficient anatase growth, which is discussed in terms of energetic particle bombardment. Polycrystalline anatase TiO2:Ta films of low electrical resistivity (1,5·10-3 Ωcm), high free electron mobility (≈8 cm2V-1s-1), and low extinction (0,006) are obtained in this way at a total pressure of 2 Pa. The dependence of the polycrystalline film electrical properties on the oxygen content is discussed in terms of Ta dopant electrical activation as well as transport limiting processes taking into account the formation of Ti-vacancies. In addition, the conventional vacuum annealing has been successfully substituted by the flash lamp annealing in the millisecond range.:1 Einleitung 2 Grundlagen 2.1 Elektrische Leitfähigkeit 2.2 Dielektrische Funktion und optische Eigenschaften 2.3 Transparente leitfähige Oxide 2.3.1 Elektrische Eigenschaften 2.3.2 Optische Eigenschaften 2.4 Titandioxid 2.4.1 Eigenschaften und Herstellung 2.4.2 Transparentes leitfähiges Anatas 3 Experimentelle Methoden 3.1 Grundlagen der Schichtabscheidung mittels Magnetron-Sputtern 3.1.1 Wechselwirkungsprozesse im Magnetronplasma 3.1.2 Kinetik der Teilchen im Plasma 3.1.3 Schichtbildung 3.1.4 Teilreaktive Abscheidung von TiO2 3.2 Versuchsaufbau und Durchführung 3.2.1 Magnetronsputteranlage 3.2.2 Durchführung der Beschichtung 3.3 Thermische Nachbehandlung 3.3.1 Ultra-Kurzzeittemperung kleiner 20 ms mittels Blitzlampen 4 Charakterisierungsmethoden 4.1 Schichtzusammensetzung und -struktur 4.1.1 Rutherford-Rückstreu-Spektrometrie 4.1.2 Röntgenbeugung 4.1.3 Transmissionselektronenmikroskopie 4.1.4 Röntgen-Nahkanten-Absorptions-Spektroskopie 4.1.5 Positronen-Annihilations-Spektroskopie 4.2 Elektrische Eigenschaften 4.2.1 Hall-Messung 4.2.2 4-Spitzen-Methode 4.3 Optische Eigenschaften 4.3.1 Spektrale Photometrie 4.3.2 Spektrale Ellipsometrie 4.3.3 Modellanalyse 5 Ergebnisse/Diskussion 5.1 Synthese von Sauerstoff-verarmtem Anatas 5.1.1 Abscheidung des amorphen Precursormaterials 5.1.2 Thermisch induzierte Kristallisation mittels Ofentemperung 5.1.3 Diskussion 5.1.4 Schlussfolgerungen 5.2 Elektrische Eigenschaften TiO2-basierter TCO 5.2.1 Ladungsträgeraktivierung und elektrischer Transport 5.2.2 Einschub zur Morphologie der Anatasschichten 5.2.3 Diskussion 5.2.4 Schlussfolgerungen 5.3 Optische Eigenschaften TiO2-basierter TCO 5.3.1 Einfluss des Temperprozesses 5.3.2 Bestimmung der dielektrischen Funktion und optischer Materialeigenschaften mittels Modellanalyse 5.3.3 Abhängigkeit der optischen Eigenschaften von der Ladungsträgerdichte 5.3.4 Diskussion 5.3.5 Schlussfolgerungen 5.4 Ultra-Kurzzeit-Kristallisation mittels Blitzlampen 5.4.1 Korrelation zwischen Abscheidungs - und FLA-Prozess 5.4.2 Einschub zur Kristallisationskinetik 5.4.3 Morphologie 5.4.4 Optoelektronische Eigenschaften 5.4.5 Diskussion 5.4.6 Schlussfolgerungen 6 Zusammenfassung & Ausblick
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Junghähnel, Manuela [Verfasser], Edda [Akademischer Betreuer] Rädlein, Peter [Akademischer Betreuer] Schaaf, and Johannes [Akademischer Betreuer] Strümpfel. "Herstellung und Charakterisierung von transparenten elektrisch leitfähigen TiO2:Nb- Dünnschichten durch Gleichstrom- und Puls-Magnetron-Sputtern / Manuela Junghähnel. Gutachter: Peter Schaaf ; Johannes Strümpfel. Betreuer: Edda Rädlein." Ilmenau : Universitätsbibliothek Ilmenau, 2012. http://d-nb.info/1019969792/34.
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Chiu, K. F. "Ionised magnetron sputter deposition." Thesis, University of Cambridge, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597619.
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The goal of this research work was to establish the Ionised Magnetron Sputter Deposition (IMSD) system and apply it to thin film fabrication. Using magnetron sputter deposition, with an additional built-in rf coil generating a rf coupled plasma to ionise sputtered atoms, the process provides a high level of control over the energy input to a growing film. The controllable parameters include ion flux, ion incident energy and the ratio of ions to neutrals of the depositing species. The possibility of depositing films and coatings with up to 85% of the depositing species as ions with energies controllable up to 150 eV offers a remarkable opportunity to engineer film growth and modify film properties by precisely controlled ion bombardment. The work presented here is concerned with the investigation and understanding of the basic properties of the IMSD process. It is composed of (1) a background introduction; (2) IMSD system characterisation; (3) characterisation of IMSD deposited metal thin films. Firstly, an introduction to magnetron sputtering and the effects of energetic bombardment on film properties, and a brief survey of ion assisted techniques are presented. The recently developed IMSD process is then introduced. The rf inductively coupled (RFI) plasma generated in the IMSD process was characterised using a single electrical probe. The RFI plasma is confined close to the substrate, and the bombarding ions are drawn directly from it, so that the plasma parameters are crucial to the ion bombardment on the substrate surface, in terms of ion flux and ion energy. It is found that the ion flux can be controlled by the power applied to the rf coil, which controls the ion density. The ion incident energy can be determined by the difference between plasma and substrate potentials. The ionisation fraction of the depositing flux (ratio of ions to total depositing atoms) has been measured by a parallel-plates method, which was developed here. The probe method was also employed later to confirm the measurement. Directionality of depositing flux was examined by depositing films into sub-micron vias and trenches.
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Marriott, Timothy. "Magnetron sputtering of bioceramics." Thesis, University of Nottingham, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.539210.
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Brookes, Marc. "Novel components by magnetron sputtering." Thesis, University of Salford, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.491045.
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The advent of the closed field unbalanced magnetron sputtering (CFUBMS) technique has provided a novel method for the production of ultra thick multilayer coatings, which form free standing foils when removed from the substrate. Applications for this method range from the production of complex metal/ceramic probe tips, to an alternative route for the production of axisymmetric high precision-machined components, such as a bellows component used in the production of uranium enrichment by the sponsors of this project, Urenco (Capenhurst) Ltd. In this study the CFUBMS system was developed to grow metallic and reactive compound multilayer foils. These foils were tested for compatibility with uranium hexafluoride, UF6 , a corrosive gas used in the production of enriched uranium that is also in contact with the bellows component.
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Spencer, Alaric Graham. "High rate reactive magnetron sputtering." Thesis, Loughborough University, 1988. https://dspace.lboro.ac.uk/2134/10464.
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Glow discharge sputtering has been used for many years to produce thin films but its commercial applications are severely limited by low deposit ion rates. The DC planar magnetron, developed a decade ago, allows much higher deposition rates and its commercial use has expanded rapidly. Non-reactive magnetron sputtering of metallic thin films is well understood and utilized. However when a reactive gas is introduced the process becomes harder to control and can switch between two stable modes. Often films are produced simply by using one of these stable modes even though this does not lead to optimum film properties or high deposition rates. This work gives a model of reactive magnetron sputtering and verifies experimentally its predictions. A 0.5 m long magnetron was designed and built specifically to allow reactive sputtering onto A4 rigid substrates. This magnetron has a variable magnetic field distribution which allows plasma bombardment of the substrate during film growth. This was shown to activate reactions at the substrate. The target lifetime was extended in our design by broadening the erosion zone and increasing the target thickness. The reactive sputtering process was shown to be inherently unstable and a control system was designed to maintain the magnetron in an unstable state. Light emission by the plasma at metal line emission wavelengths changes across the instability and so with this control signal a feedback system was built. The accuracy of control was shown experimentally and theoretically to depend on the delay time between measurement, action and effect. In practice this delay was limited by the time constant of the gas distribution manifold. The time constant of such manifolds was measured and calculated. Using our controller high quality films were produced at high rates in normally unstable deposition systems. Conducting indium oxide was produced at 6 nm/s with a resistivity of 6 x 10-6 ohm. metres onto A4 glass sheets. Tin oxide was produced at increased rates onto 2.5 m by 3 m substrates.
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Bräuer, Jörg. "Erarbeitung eines Raumtemperatur-Waferbondverfahrens basierend auf integrierten und reaktiven nanoskaligen Multilagensystemen." Doctoral thesis, Universitätsbibliothek Chemnitz, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-132820.
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Die vorliegende Arbeit beschreibt einen neuartigen Fügeprozess, das sogenannte reaktive Fügen bzw. Bonden. Hierbei werden sich selbsterhaltene exotherme Reaktionen in nanoskaligen Schichtsystemen als lokale Wärmequelle für das Fügen unterschiedlichster Substrate der Mikrosystemtechnik verwendet. Das Bonden mit den reaktiven Systemen unterscheidet sich von herkömmlichen Verfahren der Aufbau- und Verbindungstechnik primär dadurch, dass durch die rasche Reaktionsausbreitung bei gleichzeitig kleinem Reaktionsvolumen die Fügetemperaturen unmittelbar auf die Fügefläche beschränkt bleiben. Entgegen den herkömmlichen Fügeverfahren mit Wärmeeintrag im Volumen, schont das neue Verfahren empfindliche Bauteile und Materialien mit unterschiedlichsten thermischen Ausdehnungskoeffizienten lassen sich besser verbinden.
In der vorliegenden Arbeit werden die Grundlagen zur Dimensionierung, Prozessierung und Integration der gesputterten reaktiven Materialsysteme beschrieben. Diese Systeme werden verwendet, um heterogene Materialien mit unterschiedlichen Durchmessern innerhalb kürzester Zeit auf Wafer-Ebene und bei Raumtemperatur zu bonden. Die so erzeugten Verbindungen werden hinsichtlich der Mikrostruktur, der Zuverlässigkeit sowie der Dichtheit untersucht und bewertet. Zusätzlich wird die Temperaturverteilung in der Fügezone während des Fügeprozesses mit numerischen Methoden vorhergesagt.
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Eleuterio, Filho Sebastião. "Magnetron Sputtering planar construção e aplicação." [s.n.], 1991. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277105.
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Orientador: Sergio Artur Bianchini BilacDissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin
Made available in DSpace on 2018-07-14T00:34:53Z (GMT). No. of bitstreams: 1 EleuterioFilho_Sebastiao_M.pdf: 3937274 bytes, checksum: 3a5a8e1cc4df74ca5071ce507ea876fa (MD5) Previous issue date: 1991
Resumo: A técnica de deposição de filmes magnetron sputtering apresenta muitas vantagens em relação à outros métodos, como por exemplo, a simplicidade do equipamento, o baixo custo de manutenção, fácil manuseio e, a possibilidade de obtenção de altas taxas de deposição. Sua utilização é hoje muito difundida em áreas como; microeletrônica, metalurgia e óptica. Foram projetados, desenvolvidos e caracterizados cátodos magnetron de corrente continua do tipo planar, circulares e retangulares. Foram também depositados e caracterizados filmes metálicos e liga metálica para comprovar o funcionamento do magnetron sistema de disposição. Os resultados foram excelentes comparados ao resultados presentes na literatura
Abstract: Magnetron sputtering, as a thin film deposition technique, shows advantage regarding other deposition methods, for example, the equipment can be relatively simple, easy handling, low maintenance cost and, make possible high rate deposition. The utilization of the technique in microelectronics, metallurgy and optics are unquestionable. Planar magnetron sources (circular and rectangular) were designed, developed and characterized. Metals and metal alloy films were deposited to confirm operation as a film deposition system. The results were excellent when compared to literature
Mestrado
Física
Mestre em Física
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Santos, Ikaro Arthur Dantas. "Influência do teor de Hf em filmes finos de Zr e ZrN depositados por magnetron sputtering." Pós-Graduação em Ciência e Engenharia de Materiais, 2018. http://ri.ufs.br/jspui/handle/riufs/10595.
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Conselho Nacional de Pesquisa e Desenvolvimento Científico e Tecnológico - CNPqZr-Hf-N and Zr-Hf thin films were deposited by reactive magnetron sputtering in order to verify the influence of small hafnium contents that are present as contaminants on zirconium deposition targets. For this purpose different hafnium contents in the films were intentionally added by varying the deposition power. The samples were characterized by X-ray diffraction (XRD), dispersive energy X-ray spectroscopy (EDS), Rutherford backscattering spectroscopy (RBS) and nanohardness analyzes. The ZrHfN thin films were deposited and had a concentration of at% Hf of 0.49; 0.56; 0.80; 1.87 and 2.70. The deposited Zr-Hf alloys exhibited hafnium contents at up to 1.21%; 1.24; 4.35; 7.94 and 11.49. The crystalline phase obtained for the nitride films had a cubic face centered structure (FCC) and was not modified by the increase in hafnium content. The alloys presented amorphous with some crystalline regions of hexagonal structure. The hardness values ranged from 21.4 to 25.1 GPa for nitrides and from 6.1 to 8.4 GPa for zirconium alloys.
Filmes finos de Zr-Hf-N e Zr-Hf foram depositados por magnetron sputtering reativo com o intuito de verificar a influência de pequenos teores de háfnio que estão presentes como contaminantes nos alvos de deposição de zircônio. Para isto foram adicionados intencionalmente diferentes teores de háfnio nos filmes através da variação da potência de deposição. As amostras foram caracterizadas por difração de raios-X (DRX), espectroscopia de raios-Xpor energia dispersiva (EDS), espectroscopia por retroespalhamento Rutherford (RBS) e análises de nanodureza. Os filmes finos de ZrHfN foram depositados e apresentaram concentração em at.% de Hf de 0,49; 0,56; 0,80; 1,87 e 2,70. As ligas Zr-Hf depositadas apresentaram teores de háfnio em at.% de 1,21; 1,24; 4,35; 7,94 e 11,49. A fase cristalina obtida para os filmes os nitretos tinha estrutura cúbica de face centrada (CFC) e não foi modificada pelo aumento do teor de háfnio. As ligas se apresentaram amorfas com algumas regiões cristalinas de estrutura hexagonal. Os valores de dureza variaram de 21,4 a 25,1 GPa para os nitretos e de 6,1 a 8,4 GPa para as ligas de zircônio.
São Cristóvão, SE
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Junaid, Muhammad. "Magnetron Sputter Epitaxy of GaN Epilayers and Nanorods." Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-84655.
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In this research, electronic-grade GaN(0001) epilayers and nanorods have been grown onto Al2O3(0001) and Si(111) substrates, respectively, by reactive magnetron sputter epitaxy (MSE) using liquid Ga as a sputtering target. MSE, employing ultra high vacuum conditions, high-purity source materials, and lowenergy ion assisted deposition from substrate biasing, is a scalable method, lending itself to large area GaN synthesis. For the growth of epitaxial GaN films two types of sputtering techniques, direct current (DC) magnetron sputtering and high power impulse magnetron sputtering (HiPIMS) were studied. The GaN epitaxial films grown by DC-MSE directly on to Al2O3(0001) in a mixture of Ar and N2, feature low threading dislocation densities on the order of ≤ 1010 cm-2, as determined by transmission electron microscopy (TEM) and modified Williamson-Hall plots. X-ray rocking curves reveal a narrow full-width at half maximum (FWHM) of 1054 arcsec of the 0002 reflection. A sharp 4 K photoluminescence (PL) peak at 3.474 eV with a FWHM of 6.3 meV is attributed to intrinsic GaN band edge emission. GaN(0001) epitaxial films grown on Al2O3 substrates by HiPIMS deposition in a mixed N2/Ar discharge contain both strained domains and almost relaxed domains in the same epilayers, which was determined by a combination of x-ray diffraction (XRD), TEM, atomic force microscopy (AFM), μ-Raman microscopy, μ-PL, and Cathodoluminescence (CL). The almost fully relaxed domains show superior structural and optical properties evidenced by a rocking curves with full width at half maximum of 885 arc sec and a low temperature band edge luminescence at 3.47 eV with the FWHM of 10 meV. The other domain exhibits a 14 times higher isotropic strain component, which is due to higher densities of point and extended defects, resulting from bombardment of energetic species during growth. Single-crystal GaN(0001) nanorods have been grown directly on Si(111) substrates by DC-MSE in a pure N2environment. The as-grown GaN nanorods exhibit very high crystal quality from bottom to the top without any stacking faults, as determined by TEM. The crystal quality is found to increase with increasing working pressure. XRD results show that all the rods are highly 0001 oriented. All nanorods exhibit an N-polarity, as determined by convergent beam electron diffraction methods. Sharp and well-resolved 4 K μ-PL peaks at ~3.474 eV with a FWHM ranging from 1.7 meV to 22 meV are attributed to the intrinsic GaN band edge emission and corroborate the exceptional crystal quality of the material. Texture measurements reveal that the rods have random in-plane orientation when grown on Si(111) with its native oxide while they have an inplane epitaxial relationship of GaN[11̅20] // Si[1̅10] when grown on Si(111) without the surface oxide. The best structural and optical properties of the rods were achieved at N2 partial pressures of 15 to 20 mTorr. By diluting the reactive N2 working gas in DC-MSE with Ar, it is possible to achieve favorable growth conditions for high quality GaN nanorods onto Si(111) at a low total pressure of 5 mTorr. With an addition of small amount of Ar (0.5 mTorr), we observe an increase in nanorod aspect ratio from 8 to ~35, a decrease in average diameter from 74 nm to 35 nm, and a 2-fold increase in nanorod density compared to pure N2 conditions. By further dilution, the aspect ratio continuously decreases to 14 while the diameter increases to 60 nm and the nanorod density increases to a maximum of 2.4×109 cm-1. The changes in nanorod morphology upon Ar-dilution of the N2 working gas are explained by a transition from N-rich growth conditions, promoting the diffusion induced nanorods growth mode, to Ga-rich growth conditions, in qualitative agreement with GaN nanorods growth by MBE. At N2 partial pressure of 2.5 mTorr, the Ga-target is close to a non-poisoned state which gives the most perfect crystal quality which is reflected in an exceptionally narrow band edge emission at 3.479 eV with a FWHM of only 1.7 meV. Such structural and optical properties are comparable to rods previously grown at 3 to 4 time higher total working pressures of pure N2.
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Schoff, Michael Elliott. "Sputter target erosion and its effects on long duration DC magnetron sputter coating." Diss., [La Jolla] : University of California, San Diego, 2009. http://wwwlib.umi.com/cr/ucsd/fullcit?p1464930.
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Thesis (M.S.)--University of California, San Diego, 2009.Title from first page of PDF file (viewed July 14, 2009). Available via ProQuest Digital Dissertations. Includes bibliographical references (p. 54-55).
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Ja'fer, Hussein Abidjwad. "Plasma-assisted deposition using an unbalanced magnetron." Thesis, Loughborough University, 1993. https://dspace.lboro.ac.uk/2134/27734.
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It is well known that ion bombardment of growing films can strongly influence their microstructure and consequently their physical properties. The available technology for ion assisted deposition, particularly where separate sources are used for the deposition flux and the ion flux, is difficult to implement in many production situations. The planar magnetron provides a controllable ion flux while retaining the many other desirable features of simplicity, high deposition rate, geometric versatility and tolerance of reactive gases. This assists in the implementation of ion beam assisted deposition in both research and production.
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Huo, Chunqing. "Modeling High Power Impulse Magnetron Sputtering Discharges." Licentiate thesis, KTH, Rymd- och plasmafysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-94002.
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HiPIMS, high power impulse magnetron sputtering, is a promising technology that has attracted a lot of attention ever since its appearance. A time-dependent plasma discharge model has been developed for the ionization region in HiPIMS discharges. As a flexible modeling tool, it can be used to explore the temporal variations of the ionized fractions of the working gas and the sputtered vapor, the electron density and temperature, and the gas rarefaction and refill processes. The model development has proceeded in steps. A basic version IRM I is fitted to the experimental data from a HiPIMS discharge with 100 μs long pulses and an aluminum target. A close fit to the experimental current waveform, and values of density, temperature, gas rarefaction, as well as the degree of ionization shows the validity of the model. Then an improved version is first used for an investigation of reasons for deposition rate loss, and then fitted for another HiPIMS discharge with 400 μs long pulses and an aluminum target to investigate gas rarefaction, degree of ionization, degree of self sputtering, and the loss in deposition rate, respectively. Through these results from the model, we could analyse further the potential distribution and its evolution as well as the possibility of a high deposition rate window to optimize the HiPIMS discharge. Besides this modeling, measurements of HiPIMS discharges with 100 μs long pulses and a copper target are made and analyzed. A description, based on three different types of current systems during the ignition, transition and steady phase, is used to describe the evolution of the current density distribution in the pulsed plasma. The internal current density ratio is a key transport parameter. It is reported how it varies with space and time, governing the cross-B resistivity and the energy of the charged particles. From the current ratio the electron cross-B transport can be obtained and used as essential input when modeling the axial electric field, governing the back-attraction of ions.QC 20120504
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Böhlmark, Johan. "Fundamentals of High Power Impulse Magnetron Sputtering." Doctoral thesis, Linköpings universitet, Plasma och beläggningsfysik, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-7359.
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In plasma assisted thin film growth, control over the energy and direction of the incoming species is desired. If the growth species are ionized this can be achieved by the use of a substrate bias or a magnetic field. Ions may be accelerated by an applied potential, whereas neutral particles may not. Thin films grown by ionized physical vapor deposition (I-PVD) have lately shown promising results regarding film structure and adhesion. High power impulse magnetron sputtering (HIPIMS) is a relatively newly developed technique, which relies on the creation of a dense plasma in front of the sputtering target to produce a large fraction of ions of the sputtered material. In HIPIMS, high power pulses with a length of ~100 μs are applied to a conventional planar magnetron. The highly energetic nature of the discharge, which involves power densities of several kW/cm2, creates a dense plasma in front of the target, which allows for a large fraction of the sputtered material to be ionized. The work presented in this thesis involves plasma analysis using electrostatic probes, optical emission spectroscopy (OES), magnetic probes, energy resolved mass spectrometry, and other fundamental observation techniques. These techniques used together are powerful plasma analysis tools, and used together give a good overview of the plasma properties is achieved. from the erosion zone of the magnetron. The peak plasma density during the active cycle of the discharge exceeds 1019 electrons/m3. The expanding plasma is reflected by the chamber wall back into the center part of the chamber, resulting in a second density peak several hundreds of μs after the pulse is turned off. Optical emission spectroscopy (OES) measurements of the plasma indicate that the degree of ionization of sputtered Ti is very high, over 90 % in the peak of the pulse. Even at relatively low applied target power (~200 W/cm2 peak power) the recorded spectrum is totally dominated by radiation from ions. The recorded HIPIMS spectra were compared to a spectrum taken from a DC magnetron discharge, showing a completely different appearance. Magnetic field measurements performed with a coil type probe show significant deformation in the magnetic field of the magnetrons during the pulse. Spatially resolved measurements show evidence of a dense azimuthally E×B drifting current. Circulating currents mainly flow within 2 away cm from the target surface in an early part of the pulse, to later diffuse axially into the chamber and decrease in intensity. We record peak current densities of the E×B drift to be of the order of 105 A/m2. A mass spectrometry (MS) study of the plasma reveals that the HIPIMS discharge contains a larger fraction of highly energetic ions as compared to the continuous DC discharge. Especially ions of the target material are more energetic. Time resolved studies show broad distributions of ion energies in the early stage of the discharge, which quickly narrows down after pulse switch-off. Ti ions with energies up to 100 eV are detected. The time average plasma contains mainly low energy Ar ions, but during the active phase of the discharge, the plasma is highly metallic. Shortly after pulse switch-on, the peak value of the Ti1+/Ar1+ ratio is over 2. The HIPIMS discharge also contains a significant amount of doubly charged ions.
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Böhlmark, Johan. "Fundamentals of high power impulse magnetron sputtering /." Linköping : Linköping University, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-7359.
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Hales, P. W. "Resistive and superconducting magnets for magnetron sputtering." Thesis, University of Oxford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.442462.
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Yahia, Maymon. "Development of an enhanced magnetron sputtering system." Thesis, University of Salford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.490427.
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The magnetron sputtering process has become established as the process of choice for the deposition of a wide range of industrially important coatings. However, despite its successes, there are inherent limitations in the current process. The ion-to-atom ratio incident at the substrate, which has a profound effect on coating properties, cannot readily be varied using present technology. Consequently, film properties may not be optimal. The relation between the incident charge and the energy delivered to the surface is another parameter that cannot be controlled in classical magnetron sputtering systems. This in turn can lead to difficulties in controlling the reaction between reactive gases and deposited materials, controlling the surface status prior, during and after deposition, monitoring the natural growth of native oxides and their combined effect on the adhesion of the thin film and the optical and electrical properties of the coated surface.
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Serban, Alexandra. "Magnetron Sputter Epitaxy of Group III-Nitride Semiconductor Nanorods." Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-141595.
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The III-nitride semiconductors family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and related ternary and quaternary alloys. The research interest on this group of materials is sparked by the direct bandgaps, and excellent physical and chemical properties. Moreover, the ternary alloys (InGaN, InAlN and AlGaN) present the advantage of bandgap tuning, giving access to the whole visible spectrum, from near infrared into deep ultraviolet wavelengths. The intrinsic properties of III-nitride materials can be combined with characteristical features of nanodimension and geometry in nanorod structures. Moreover, nanorods offer the advantage of avoiding problems arising from the lack of native substrates, like lattice and thermal expansion, film – substrate mismatch. The growth and characterization of group III-nitride semiconductos nanorods, namely InAlN and GaN nanorods, is presented in this thesis. All the nanostructures were grown by employing direct-current reactive magnetron sputter epitaxy. InxAl1−xN self-assembled, core-shell nanorods on Si(111) substrates were demonstrated. A comprehensive study of temperature effect upon the morphology and composition of the nanorods was realized. The radial nanorod heterostructure consists of In-rich cores surrounded by Al-rich shells with different thicknesses. The spontaneous formation of core-shell nanorods is suggested to originate from phase separation due to spinodal decomposition. As the growth temperature increase, In desorption is favored, resulting in thicker Al-rich shells and larger nanorod diameters. Both self-assembled and selective-area grown GaN nanorods are presented. Self-assembled growth of GaN nanorods on cost-effective substrates offers a cheaper alternative and simplifies device processing. Successful growth of high- quality GaN (exhibiting strong bandedge emission and high crystalline quality) on conductive templates/substrates such as Si, SiC, TiN/Si, ZrB2/Si, ZrB2/SiC, Mo, and Ti is supported by the possibility to be used as electrodes when integrated in optoelectronic devices. The self-assembled growth leads to mainly random nucleation, resulting in nanorods with large varieties of diameters, heights and densities within a single growth run. This translates into non-uniform properties and complicates device processing. These problems can be circumvented by employing selective-area growth. Pre-patterned substrates by nano-sphere lithography resulted in GaN nanorods with controlled length, diameter, shape, and density. Well-faceted c-axis oriented GaN nanorods were grown directly onto the native SiOx layer inside nano-opening areas, exhibiting strong bandedge emission at room- temperature and single-mode lasing. Our studies on the growth mechanism revealed a different growth behavior when compared with selective-area grown GaN nanorods by MBE and MOCVD. The time-dependent growth series helped define a comprehensive growth mechanism from the initial thin wetting layer formed inside the openings, to the well-defined, uniform, hexagonal NRs resulted from the coalescence of multiple initial nuclei.
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Sveinsson, Ólafur Björgvin. "Measurement setup for High Power Impulse Magnetron Sputtering." Thesis, Uppsala universitet, Signaler och System, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-162988.
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Recently material physics group at Science Institute of University of Iceland has been using reactive sputtering to grow thin films used in various research projects at the institute. These films have been grown using dc sputtering which has been proven a very successful method. High power impulse magnetron sputtering or HiPIMS is an new pulsed power sputtering method where shorter but high power pulses are used to sputter over lower steady power. The project resulted in a functional system capable of growing thin films using HiPIMS. Thin films grown with high power pulses have a higher film density and other more preferable properties compared to films grown using direct current magnetron sputtering.
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Lundin, Daniel. "Plasma properties in high power impulse magnetron sputtering." Licentiate thesis, Linköping : Department of Physics, Chemistry, and Biology, Linköping University, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11621.
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Ulucan, Savaş Özyüzer Lütfi. "Growth of magnetron sputtered superconductor MgB2 thin films/." [s.l.]: [s.n.], 2006. http://library.iyte.edu.tr/tezlerengelli/master/fizik/T000550.pdf.
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Petty, Thomas. "Tungsten nanostructure formation in a magnetron sputtering device." Thesis, University of Liverpool, 2015. http://livrepository.liverpool.ac.uk/2036140/.
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Fuzzy tungsten is a phenomena that could potentially occur in future fusion reactors. There are three conditions for fuzz to form, the existence of He ions impinging on a tungsten sample for a sufficient amount of time, that these ions be of sufficient energy, and that the surface temperature of the tungsten is hot enough. These conditions will likely be fulfilled in ITER, the future flagship fusion reactor. Therefore efforts to understand and characterise the fuzz formation are of importance. A thorough literature review has been provided, bringing together for the first time works from over 100 papers on the area. The history of its discovery is explained and the characteristics of the structure are detailed. The potential for fuzz to occur in ITER is shown, and positive and negative aspects of fuzz for fusion operation are discussed. The current accepted growth mechanisms are explained and a brief summary of the current work on simulating the phenomena is given. Fuzz appearing on other metals is introduced, and evidence of creating fuzz in a tokamak is shown. Methods for removing fuzz are presented should it be deemed necessary to do so in ITER. Results are compiled from many fuzz samples created in the literature spanning four orders of magnitude of fluence. This provided the foundation for a collaboration with the UC San Diego, and lab time at their facilities. Several samples were created to complement the dataset. The compilation provides new insights into the growth equation surrounding fuzz formation. A new addition to the equation is introduced in the form of an incubation fluence, a minimum fluence required before fuzz can develop. The growth model is expanded to fuzz grown in erosive regimes, and a new equation is proposed that encompasses the competition between growth and erosion, giving good predictions for the resulting equilibrium thickness. A new method for creating fuzz has been developed in a cheap and simple way. Conventional methods involve using large scale expensive devices, only available in a select few places worldwide. Magnetrons are apparent in many laboratories around the world and a technique for making fuzz in them has been developed. The three parameters controlling fuzz formation have been studied in the magnetron by making samples at many different conditions. The results provide new insight into early fuzz formation, providing results in a fluence range often over-looked. A cross-over fluence is noted from pre-fuzz to fully formed fuzz, overlapping with the predicted incubation fluence. The results differ slightly from fuzz created in other devices at similar fluence. The most probable cause is due to the unique existence of deposition of metallic particles in a magnetron incident on the samples during the growth of fuzz.
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Guimarães, Monica Costa Rodrigues. "Deposição e caracterização de filmes finos de CrN depositados por diferentes processos de magnetron sputtering." Universidade de São Paulo, 2017. http://www.teses.usp.br/teses/disponiveis/18/18158/tde-17112017-104317/.
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O PVD (Physical Vapor Deposition- Deposição física na fase de vapor) é um meio utilizado para a produção de recobrimentos e empregado em grande escala industrial. É um processo de deposição atômica no qual o material é vaporizado de alvo sólido por sputtering e posteriormente condensado sobre a peça a ser revestida na forma de filme. O processo ocorre em uma câmara de vácuo, na presença de plasma, e por diferença de potencial os íons, na forma pura ou combinados com átomos de hidrogênio ou carbono, são movidos para a superfície do substrato. Uma técnica relativamente nova de sputtering é o HiPIMS (High Power Impulse Magnetron Sputtering) que utiliza impulsos de energia extremamente altas com densidade de potência possibilitando filmes com melhores performances e mais densos. No presente trabalho filmes de nitreto de cromo (CrN) foram depositados por duas técnicas de magnetron sputtering, HiPIMS e DCMS (Direct Current Magnetron Sputtering), variando frequência de pulso em 400 Hz, 450 Hz e 500 Hz para o HiPIMS e a tensão de polarização em 0 V, -20 V, -40V, -60V, - 100 V e -140 V para os dois processos. Foram obtidos filmes com maior dureza, menor rugosidade para HiPIMS, no entanto DCMS apresentou maior taxa de deposição. O aumento da frequência nos filmes HiPIMS, assim como o aumento da tensão de polarização negativa possibilitaram filmes com morfologia mais densa e homogênea. Este fato também foi observado com o aumento do valor de bias nos filmes depositados por DCMS. Os valores de dureza obtidos (17 ± 2 para DCMS e 26 ± 1 para HiPIMS) são superiores aos reportados na literatura e podem estar relacionados ao efeito de \"multicamadas\" obtido pela oscilação do substrato.PVD (Physical Vapor Deposition) is a process used for coatings deposition and it is used on a large industrial scale. It is an atomic deposition process in which the material is vaporized from solid target by sputtering and then condensed onto the part to be coated in film form. The process occurs in a vacuum chamber in the presence of plasma, and by potential difference the ions in pure form or combined with hydrogen or carbon atoms are moved to the surface of the substrate. A relatively new sputtering technique is the HiPIMS (High Power Impulse Magnetron Sputtering) which uses extremely high energy pulses with power density to enable higher performance and denser films. In the present work, chromium nitride (CrN) films were deposited by two magnetron sputtering techniques, HiPIMS and DCMS (Direct Current Magnetron Sputtering), varying the pulse frequency at 400 Hz, 450 Hz and 500 Hz for the HiPIMS and the bias at 0 V, -20 V, -40 V, -60 V, -100 V and -140 V for both processes. It was obtained films with high hardness, less roughness for HiPIMS, however DCMS presented a higher rate of deposition. The increase of the frequency in the HiPIMS films, as well as the increase of the negative polarization voltage, allowed films with denser and homogeneous morphology. This fact was also observed with the increase of the value in the films deposited by DCMS. The hardness values obtained (17 ± 2 for DCMS and 26 ± 1 for HiPIMS) were higher than those reported in the literature and may be related to the \"multilayer\" effect obtained by substrate oscillation.
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Silva, Danilo Lopes Costa e. "Filmes finos de carbono depositados por meio da técnica de magnetron sputtering usando cobalto, cobre e níquel como buffer-layers." Universidade de São Paulo, 2015. http://www.teses.usp.br/teses/disponiveis/85/85134/tde-27082015-090945/.
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Neste trabalho, foram produzidos filmes finos de carbono pela técnica de magnetron sputtering usando substratos monocristalinos de alumina com plano-c orientado em (0001) e substratos de Si (111) e Si (100), empregando Co, Ni e Cu como filmes intermediários (buffer-layers). As deposições foram conduzidas em três etapas, sendo primeiramente realizadas com buffer-layers de cobalto em substratos de alumina, onde somente após a produção de grande número de amostras, foram então realizadas as deposições usando buffer-layer de cobre em substratos de Si. Em seguida foram realizadas as deposições com buffer-layers de níquel em substratos de alumina. A cristalinidade dos filmes de carbono foi avaliada por meio da técnica de espectroscopia Raman e complementarmente por difração de raios X (DRX). A caracterização morfológica dos filmes foi feita por meio da microscopia eletrônica de varredura (MEV E FEG-SEM) e microscopia eletrônica de transmissão de alta resolução (HRTEM). Picos de DRX referentes aos filmes de carbono foram observados apenas nos resultados das amostras com buffer-layers de cobalto e de níquel. A espectroscopia Raman mostrou que os filmes de carbono com maior grau de cristalinidade foram os produzidos com substratos de Si (111) e buffers de Cu, e com substratos de alumina com buffer-layers de Ni e Co, tendo este último uma amostra com o maior grau de cristalinidade de todas as produzidas no trabalho. Foi observado que o cobalto possui menor recobrimento sobre os substratos de alumina quando comparado ao níquel. Foram realizados testes de absorção de íons de Ce pelos filmes de carbono em duas amostras e foi observado que a absorção não ocorreu devido, provavelmente, ao baixo grau de cristalinidade dos filmes de carbono em ambas amostras.In this work, carbon thin films were produced by the magnetron sputtering technique using single crystal substrates of alumina c-plane (0001) and Si (111) and Si (100) substrates, employing Co, Ni and Cu as intermediate films (buffer-layers). The depositions were conducted in three stages, first with cobalt buffer-layers where only after the production of a large number of samples, the depositions using cooper buffer-layers were carried out on Si substrates. Then, depositions were performed with nickel buffer-layers using single-crystal alumina substrates. The crystallinity of the carbon films was evaluated by using the technique of Raman spectroscopy and, complementarily, by X-ray diffraction (XRD). The morphological characterization of the films was performed by scanning electron microscopy (SEM and FEG-SEM) and high-resolution transmission electron microscopy (HRTEM). The XRD peaks related to the carbon films were observed only in the results of the samples with cobalt and nickel buffer-layers. The Raman spectroscopy showed that the carbon films with the best degree of crystallinity were the ones produced with Si (111) substrates, for the Cu buffers, and sapphire substrates for the Ni and Co buffers, where the latter resulted in a sample with the best crystallinity of all the ones produced in this work. It was observed that the cobalt has low recovering over the alumina substrates when compared to the nickel. Sorption tests of Ce ions by the carbon films were conducted in two samples and it was observed that the sorption did not occur probably because of the low crystallinity of the carbon films in both samples.
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Güttler, Dominik. "An Investigation of Target Poisoning during Reactive Magnetron Sputtering." Forschungszentrum Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-27841.
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Objective of the present work is a broad investigation of the so called target poisoning during magnetron deposition of TiN in an Ar/N2 atmosphere. Investigations include realtime in-situ ion beam analysis of nitrogen incorporation at the Ti sputter target during the deposition process and the analysis of particle uxes towards and from the target by means of energy resolved mass spectrometry. For experiments a planar, circular DC magnetron, equipped with a 2 inch titanium target was installed in an ultrahigh vacuum chamber which was attached to the beam line system of a 5 MV tandem accelerator. A manipulator allows to move the magnetron vertically and thereby the lateral investigation of the target surface. During magnetron operation the inert and reactive gas flow were adjusted using mass flow controllers resulting in an operating pressure of about 0.3 Pa. The argon flow was fixed, whereas the nitrogen flow was varied to realize different states of target poisoning. In a fi?rst step the mass spectrometer was used to verify and measure basic plasma properties e.g. the residual gas composition, the behavior of reactive gas partial pressure, the plasma potential and the dissociation degree of reactive gas molecules. Based on the non-uniform appearance of the magnetron discharge further measurements were performed in order to discuss the role of varying particle fluxes across the target during the poisoning process. Energy and yield of sputtered particles were analyzed laterally resolved, which allows to describe the surface composition of the target. The energy resolving mass spectrometer was placed at substrate position and the target surface was scanned by changing the magnetron position correspondingly. It was found, that the obtained energy distributions (EDF) of sputtered particles are influenced by their origin, showing signi?ficant differences between the center and the erosion zone of the target. These results are interpreted in terms of laterally different states of target poisoning, which results in a variation of the surface binding energy. Consequently the observed energy shift of the EDF indicates the metallic or already poisoned fraction on target surface. Furthermore the EDF's obtained in reactive sputtering mode are broadened. Thus a superposition of two components, which correspond to the metallic and compound fractions of the surface, is assumed. The conclusion of this treatment is an discrete variation of surface binding energy during the transition from metallic to compound target composition. The reactive gas target coverage as derived from the sputtered energy distributions is in reasonable agreement with predictions from model calculations. The target uptake of nitrogen was determined by means of ion beam analysis using the 14N(d, )12C nuclear reaction. Measurements at varying nitrogen gas flow directly demonstrate the poisoning eff?ect. The reactive gas uptake saturates at a maximum nitrogen areal density of about 1.1016 cm-2 which corresponds to the stoichiometric limit of a 3 nm TiN layer. At sufficiently low reactive gas flow a scan across the target surface discloses a pronounced lateral variation of target poisoning, with a lower areal density in the target race track compared to the target center and edge. Again the findings are reproduced by model calculations, which confirm that the balance of reactive gas injection and sputter erosion is shifted towards erosion in the race track. Accomplished computer simulations of the reactive sputtering process are similar to Berg's well known model. Though based on experimental findings the algorithm was extended to an analytical two layer model which includes the adsorption of reactive gas as well as its different kinds of implantation. A distribution of ion current density across the target diameter is introduced, which allows a more detailed characterization of the processes at the surface. Experimental results and computer simulation have shown that at sufficiently low reactive gas flow, metallic and compound fractions may exist together on the target surface, which is in contradiction to previous simulations, where a homogeneous reactive gas coverage is assumed. Based on the results the dominant mechanisms of nitrogen incorporation at different target locations and at varying reactive gas admixture were identified.
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Rasch, Joel. "Probe measurements in a pulsed high power sputtering magnetron." Thesis, KTH, Rymd- och plasmafysik, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-91546.
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Aiempanakit, Montri. "Reactive High Power Impulse Magnetron Sputtering of Metal Oxides." Doctoral thesis, Linköpings universitet, Plasma och beläggningsfysik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-91259.
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The work presented in this thesis deals with reactive magnetron sputtering processes of metal oxides with a prime focus on high power impulse magnetron sputtering (HiPIMS). The aim of the research is to contribute towards understanding of the fundamental mechanisms governing a reactive HiPIMS process and to investigate their implications on the film growth. The stabilization of the HiPIMS process at the transition zone between the metal and compound modes of Al-O and Ce-O was investigated for realizing the film deposition with improved properties and higher depositionrate and the results are compared with direct current magnetron sputtering (DCMS) processes. The investigations were made for different sputtering conditions obtained by varying pulse frequency, peak power and pumping speed. For the experimental conditions employed, it was found that reactive HiPIMS can eliminate/suppress the hysteresis effect for a range of frequency, leading to a stable deposition process with a high deposition rate. The hysteresis was found to be eliminated for Al-O while for Ce-O, it was not eliminated but suppressed as compared to the DCMS. The behavior of elimination/suppression of the hysteresis may be influenced by high erosion rate during the pulse, limited target oxidation between the pulses and gas rarefaction effects in front of the target. Similar investigations were made for Ti-O employing a larger target and the hysteresis was found to be suppressed as compared to the respective DCMS, but not eliminated. It was shown that the effect of gas rarefaction is a powerful mechanism for preventing oxide formation upon the target surface. The impact of this effect depends on the off-time between the pulses. Longer off-times reduce the influence of gas rarefaction. To gain a better understanding of the discharge current-voltage behavior in a reactive HiPIMS process of metal oxides, the ion compositions and ion energy distributions were measured for Al-O and Ti-O using time averaged and time-resolved mass spectrometry. It was shown that the different discharge current behavior between non-reactive and reactive modes couldn’t be explained solely by the change in the secondary electron emission yield from the sputtering target. The high fluxes of O1+ ions contribute substantially to the discharge current giving rise to an increase in the discharge current in the oxide mode as compared to the metal mode. The results also show that the source of oxygen in the discharge is both, the target surface (via sputtering) as well as the gas phase. The investigations on the properties of HiPIMS grown films were made by synthesizing metal oxide thin films using Al-O, Ti-O and Ag-Cu-O. It was shown that Al2O3 films grown under optimum condition using reactive HiPIMS exhibit superior properties as compared to DCMS. The HiPIMS grown films exhibit higher refractive index as well as the deposition rate of the film growth was higher under the same operating conditions. The effect of HiPIMS peak power on TiO2 film properties was investigated and the results are compared with the DCMS. The properties of TiO2 films such as refractive index, film density and phase structure were experimentally determined. The ion composition during film growth was investigated and an explanation on the correlation of the film properties and ion energy was made. It was found that energetic and ionized sputtered flux in reactive HiPIMS can be used to tailor the phase formation of the TiO2 films with high peak powers facilitating the rutile phase while the anatase phase can be obtained using low peak powers. These phases can be obtained at room temperature without external substrate heating or post-deposition annealing which is in contrast to the reactive DCMS where both, anatase and rutile phases of TiO2 are obtained at either elevated growth temperatures or by employing post deposition annealing. The effect of HiPIMS peak power on the crystal structure of the grown films was also investigated for ternary compound, Ag-Cu-O, for which films were synthesized using reactive HiPIMS as well as reactive DCMS. It was found that the stoichiometric Ag2Cu2O3 can be synthesized by all examined pulsing peak powers. The oxygen gas flow rate required to form stoichiometric films is proportional to the pulsing peak power in HiPIMS. DCMS required low oxygen gas flow to synthesis the stoichiometric films. The HiPIMS grown films exhibit more pronounced crystalline structure as compared to the films grown using DCMS. This is likely an effect of highly ionized depositing flux which facilitates an intense ion bombardment during the film growth using HiPIMS. Our results indicate that Ag2Cu2O3film formation is very sensitive to the ion bombardment on the substrate as well as to the backattraction of metal and oxygen ions to the target.
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Maniate, Janet. "Fabrication and characterization of DC magnetron sputtered ZnO films." Thesis, McGill University, 2003. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=19737.
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In order to examine and improve conditions for the fabrication of ZnO thin films by dc magnetron sputtering for solar cell applications, film deposition time, Ar-02 gas inflow and concentration of O? in the Ar-02 gas admitted into the evacuated chamber, line flushing time, voltage at the cathode and the quantity of dopant added to the target were adjusted. Effectiveness of treatment was assessed by characterization of the films produced. When O2 gas incoming to the chamber was 0.1%, the optimum conditions for deposition of thin film ZnO were two hours of line flushing prior to sputtering, deposition duration of eight hours, applied voltage of 32 V ac and Ar-02 gas inflow rate of 131.5 mm/min. Sputtered from Zn with dopant unincorporated, sheet resistance of the best ZnO film obtained was 3.09 x 10 Q/D. Sputtering with dopant incorporated within the target, sheet resistance of the best ZnO film obtained was 2.57 x 102 Q/D. O2 gas admission of 1% produced, over the 400-1600 nm wavelength range studied, the highest optical transmission, in excess on the average of 80% through the films. Films that transmitted the most light, tended to have the largest sheet resistances, 10 Q/D or above. For constant O2 admission concentration, it was found that optical transmission tended to increase as ac applied voltage was lowered during deposition. During Hall effect measurement, carrier concentration of the films was found to increase with increase of the dopant concentration, with mean carrier concentration for the most highly doped ZnO film sample being 2.22 x 10 cm" . Carrier mobility obtained with a combination of film treatments was approximately nine times greater than by doping alone, suggesting that carrier mobility can be altered by combining treatments. After a combination of treatments, highest sample mean carrier mobility was 21.79 cm2V" V1. After doping alone, with other conditions not optimized, the most highly doped sample had mean carrier mobility of 2.41 cm V" s" . A decrease in sheet resistance of the order of magnitude of 104 Q/D was obtained after 320 minutes of sample annealing at 200° C. Following heat treatment, the highest carrier concentration obtained was 7.70 x 10 cm" . The highest mean mobility was 5.89 c m W .
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Forsén, Rikard. "Dynamic pressure measurements in high power impulse magnetron sputtering." Thesis, Linköping University, Department of Physics, Chemistry and Biology, 2009. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-52551.
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A microphone has been used to measure the dynamic pressure inside a vacuum chamber during high power impulse magnetron sputtering with high enough time-resolution (~µs) to track the pressure change during the discharge pulse. An experimental measurement of the dynamic pressure is of interest since it would give information about gas depletion, which is believed to dramatically alter the plasma discharge characteristics. This investigation has shown that the magnitude of the pressure wave, which arises due to the gas depletion, corresponds to a 0.4 - 0.7Pa (3 - 5.5mTorr) pressure difference at a distance of 15cm from the target, with base pressures of 2 - 6mTorr for a peak current of 110A. It has also been shown that another pressure wave, about 250µs later, can be detected. Its explanation is suggested to be that the initial pressure wave is bouncing against the chamber walls and thereby causing another peak.
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Trinh, David Huy. "Nanocrystalline Alumina-Zirconia Thin Films Grown by Magnetron Sputtering." Doctoral thesis, Linköping : Department of Physics, Chemistry and Biology, Linköpings universitet, 2008. http://www.bibl.liu.se/liupubl/disp/disp2008/tek1153s.pdf.
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Nygren, Kristian. "Magnetron Sputtering of Nanocomposite Carbide Coatings for Electrical Contacts." Doctoral thesis, Uppsala universitet, Oorganisk kemi, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-302063.
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Today’s electronic society relies on the functionality of electrical contacts. To achieve good contact properties, surface coatings are normally applied. Such coatings should ideally fulfill a combination of different properties, like high electrical conductivity, high corrosion resistance, high wear resistance and low cost. A common coating strategy is to use noble metals since these do not form insulating surface oxides. However, such coatings are expensive, have poor wear resistance and they are often applied by electroplating, which poses environmental and human health hazards. In this thesis, nanocomposite carbide-based coatings were studied and the aim was to evaluate if they could exhibit properties that were suitable for electrical contacts. Coatings in the Cr-C, Cr-C-Ag and Nb-C systems were deposited by magnetron sputtering using research-based equipment as well as industrial-based equipment designed for high-volume production. To achieve the aim, the microstructure and composition of the coatings were characterized, whereas mechanical, tribological, electrical, electrochemical and optical properties were evaluated. A method to optically measure the amount of carbon was developed. In the Cr-C system, a variety of deposition conditions were explored and amorphous carbide/amorphous carbon (a-C) nanocomposite coatings could be obtained at substrate temperatures up to 500 °C. The amount of a-C was highly dependent on the total carbon content. By co-sputtering with Ag, coatings comprising an amorphous carbide/carbon matrix, with embedded Ag nanoclusters, were obtained. Large numbers of Ag nanoparticles were also found on the surfaces. In the Nb-C system, nanocrystalline carbide/a-C coatings could be deposited. It was found that the nanocomposite coatings formed very thin passive films, consisting of both oxide and a-C. The Cr-C coatings exhibited low hardness and low-friction properties. In electrochemical experiments, the Cr-C coatings exhibited high oxidation resistance. For the Cr-C-Ag coatings, the Ag nanoparticles oxidized at much lower potentials than bulk Ag. Overall, electrical contact resistances for optimized samples were close to noble metal references at low contact load. Thus, the studied coatings were found to have properties that make them suitable for electrical contact applications.
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Santos, Claudiosir Roque dos. "Deposição de nano-camadas de VO2 por Magnetron Sputtering." Universidade Federal de Santa Maria, 2007. http://repositorio.ufsm.br/handle/1/9264.
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The vanadium dioxide (VO2) shows a metal-insulator transition (MIT) near the room temperature with huge changes in its electrical and optical behavior. Both the
electrical and optic properties, and even the transition temperature, depend on the morphologic characteristics of the metal. In this work, vanadium oxide nanolayers were deposited onto glass substrate by reactive magnetron sputtering. The aim was to obtain the best deposition parameters, like substrate temperature (Ts) and oxygen
partial pressure (PO2), for the VO2M1 phase synthesis. Samples deposited with oxygen partial pressures ranging from 10 to 20% of the total pressure, and Ts=400°C, have shown metal insulator transition when submitted to a 550°C ex-situ
thermal treatment. The analysis of the x-ray diffraction spectra has shown that all the samples were formed simultaneously by more than one phase of vanadium oxides.
Moreover, we identify a reciprocal correspondence between the 2q = 27,8° peak, corresponding to (011) plan in VO2M1, and the MIT transition. The measured resistance in samples with VO2M1, in the temperature range of 25 to 100°C, showed
variations of almost three orders of magnitude. The transition critical temperature took place between 59 and 82°C and the hysteresis loops width ranged between 9 and 13°CO dióxido de Vanádio (VO2) apresenta uma transição metal isolante (MIT) próxima da temperatura ambiente com uma grande variação em suas propriedades elétricas e ópticas. Tanto as propriedades elétricas e ópticas quanto a própria temperatura de transição dependem das características morfológicas do material. Neste trabalho, nano-camadas de óxido de Vanádio foram produzidas sobre substratos de vidro pela técnica de magnetron sputtering reativo, visando determinar os parâmetros de deposição, em especial a temperatura do substrato (Ts) e pressão parcial de Oxigênio (PO2), adequadas para a obtenção da fase VO2M1. Amostras depositadas com pressões parciais de Oxigênio entre 10 e 20% da pressão total e Ts=400°C apresentaram MIT quando submetidas a tratamentos térmicos ex-situ a 550°C. A análise dos espectros de difração de raios-x mostrou que houve formação de mais de uma fase simultaneamente em todas as amostras, no entanto há uma correspondência recíproca entre o pico de difração de raios-x em 2q = 27,8° , correspondente ao plano (011) do VO2M1, e a transição MIT na resistividade. As medidas de resistência em função da temperatura, realizadas entre 25 e 100°C, mostraram, nas amostras com VO2M1, transição com variação na resistência em até três ordens de grandeza com temperaturas críticas entre 59 e 82°C e curvas de histerese com larguras entre 9 e 13°C
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Zhou, Wei. "Oblique Angle Deposition Effects on Magnetron-Sputtered Metal Films." Miami University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=miami1501067883261477.
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Long, Yi. "Hardness of nitride thin films made by ionised magnetron sputter deposition." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.614990.
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Danson, Nigel. "Novel techniques for the control of the properties of reactively-sputtered thin films." Thesis, Loughborough University, 1996. https://dspace.lboro.ac.uk/2134/32871.
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Precise control techniques are of fundamental importance in the accurate deposition of optical, mechanical, electrical and magnetic thin films. The objective of this work was twofold: to devise and evaluate novel control systems for reactive sputtering primarily oxide films, and investigate the effects of these processes on resultant film properties.
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ROLIM, Ana Luiza de Souza. "Propriedades supercondutoras de filmes finos de Nb depositados por magnetron sputtering." Universidade Federal de Pernambuco, 1996. https://repositorio.ufpe.br/handle/123456789/6538.
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Previous issue date: 1996Conselho Nacional de Desenvolvimento Científico e Tecnológico
Neste trabalho é estudado a deposição de filmes finos metálicos e refratários por magnetron sputtering utilizando-se tanto de uma fonte de como rf. Os pontos ótimos de trabalho foram determinados em função da pressão na câmara de deposição e da potência das fontes para os seguintes materiais: Nb, Ti, Mo, W e Si, obtendo assim um treinamento na utilização da máquina de deposição ao mesmo tempo que preparando-a para futuros usuários. Especial atenção é dada à deposição e caracterização de filmes finos de Nb com espessura entre 300 Å e 10000 Å. As características supercondutoras destes filmes são analisadas através de medidas de susceptibilidade ac, magnetização dc e da razão de resistência. O diagrama de fase campo magnético temperatura (H-T), obtido de seqüências de esfriamento a campo nulo (ZFC) e em campo (FC), revela uma forte dependência da linha de irreversibilidade com a espessura do filme. Em filmes mais finos a região de irreversibilidade diminui. Este efeito é atribuído a danos superficiais causados por tensões ou por defeitos
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Johansson, Viktor. "Off-normal Film Growth by High Power Impulse Magnetron Sputtering." Thesis, Linköpings universitet, Plasma och beläggningsfysik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-71315.
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In this study we contribute towards establishing the process-microstructure relationships in thin films grown off-normally by ionized physical vapor deposition. High power impulse magnetron sputtering (HiPIMS) is used at various peak target powers and deposition rates to grow copper (Cu) and chromium (Cr) films from a cathode placed at an angle 90 degrees with respect to the substrate normal. Films are also deposited by direct current magnetron sputtering (DCMS), for reference. Scanning electron microscopy is employed to investigate column tilting and deposition rate while X-ray diffraction techniques are utilized to study crystal structure and grain tilting. It is demonstrated that the columnar structure of Cu tilts less with respect to the substrate normal as the peak target power increases, which has been shown to correspond to a higher ionization degree of the sputtered material [1]. One explanation for this is that the trajectories of the ions are deflected towards the substrate and therefore deposited closer to the normal, as has been suggested in the literature (see e.g. [2]). Energetic bombardment by ions might also increase surface mobility, which further raises the columns. It is also concluded that the change in tilting is not caused by a lower deposition rate obtained when employing HiPIMS. The same is not seen for Cr, where all deposited films exhibit the same tilting angle. When the column tilting of Cu and Cr is compared a large difference is observed, where the columns of Cr are closer to the substrate normal. The reasons for this difference are discussed in light of nucleation and growth characteristics in the two materials. X-ray diffraction analysis reveals that Cu films exhibit an (111) fiber texture. Comparison of films grown by DCMS and HiPIMS shows that in the HiPIMS cases the grains are closer to the surface normal and better oriented with each other. In the case of Cr both DCMS and HiPIMS grown films are (110) biaxially aligned.
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Trinh, David Huy. "Synthesis and Characterisation of Magnetron Sputtered Alumina-Zirconia Thin Films." Licentiate thesis, Linköping : Linköping University, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-7513.
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