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Academic literature on the topic 'Matériaux électroluminescents'
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Journal articles on the topic "Matériaux électroluminescents"
Antony, R., A. Moliton, and B. Ratier. "Diodes électroluminescentes obtenues par IBAD (dépôt assisté par faisceau d'ions) d'un matériau organique (Alq3)." Journal de Chimie Physique et de Physico-Chimie Biologique 95, no. 3 (March 1998): 586–94. http://dx.doi.org/10.1051/jcp:1998170.
Full textAntony, R., A. Moliton, and B. Ratier. "Effet de l'énergie du faisceau d'ions servant à l'assistance du dépôt de matériaux organiques utilisés pour réaliser des diodes électroluminescentes." Journal de Chimie Physique et de Physico-Chimie Biologique 95, no. 6 (June 1998): 1359–62. http://dx.doi.org/10.1051/jcp:1998283.
Full textDissertations / Theses on the topic "Matériaux électroluminescents"
Habrard, Florian. "Élaboration de dispositifs et matériaux mixtes à base de polymères conjugués électroluminescents." Phd thesis, Université Joseph Fourier (Grenoble), 2006. http://tel.archives-ouvertes.fr/tel-00130247.
Full textSeghier, Djelloul. "Etude des propriétés optiques et électriques des matériaux semiconducteurs III-V dopés aux ions Terres Rares en vue de la réalisation de dispositifs électroluminescents." Lyon, INSA, 1992. http://www.theses.fr/1992ISAL0040.
Full textIn this work we resent the results obtained from opt ical and electrical spectroscopy studies realized on III-V semiconductors (InP, GaAs, GaAlAs) doped with Rare Earth ions (Yb, Er, Eu. . . ) The aim is to study the feasibility of new electroluminescent devices based on the se waterials In the case of Yb doped InP, we have shown that Yb ion acts as an isovalent impurity which can trap simultaneously electrons and holes. This electrical dehaviour is used to explain the optical proerties of the ion. Accordingly, we propose a general model for the excitation and the desexcitation of the Rare Earth on ion luminescence. This model is also used to explain the results obtained from Er doped GaAs and GaAlAs materials. We have shown in the case of GaAlAs:Er that the stimulated emission cross section we have measured (10-19 cm²) is too low for laser application. Concerning Light electroluminescence Diode (DEL) the Auger non radiative lasses that we have observed by methods reduce considerably by the quantum efficiency of such devices. According these results, we discuss the potentialities of these materials
Antony, Rémi. "Réalisation et caractérisations optoélectroniques de diodes électroluminescentes à base de polymères électroactifs et de matériaux moléculaires déposés avec l'assistance d'un faisceau d'ions." Limoges, 1998. http://www.theses.fr/1998LIMO0014.
Full textCueff, Sébastien. "Transfert d’énergie entre nanoclusters de Silicum et Erbium dans des matrices oxydes et nitrures de Si : applications à des diodes électroluminescentes." Caen, 2011. http://www.theses.fr/2011CAEN2039.
Full textThis work is based on the analysis and optimization of an alternative material to replace metallic interconnections of integrated circuits. This material is an SiO2 matrix containing Silicon-nanoclusters (Si-nc) and Erbium ions (Er3+). Thanks to an energy transfer between Si-nc and Er3+, the strong absorption of Si-nc in the visible range results in the indirect excitation of Er3+ ions that thus emit at 1. 5 µm. The goal is to optimize the emission properties of Er3+ at 1. 5 µm, and for that, to maximize the energy transfer between Si-nc and Er3+. First, the work is directed on thermal treatments during and after the deposition. Then, we analyze the influence of the film thickness on the material’s optical properties and we show that thinnest films (< 150 nm) contain a low number of that reduces the number of excited erbium. We demonstrate that this problem can be overcome by increasing the silicon concentration, hence raising the number of sensitizers for Er3+. It is also shown that Er3+ ions benefit from a multilevel excitation by Si-nc sensitizers. A second part of the work consists in the realization of light-emitting diodes (LEDs) and to optimize their emission at 1. 5 µm. We show that thickness and silicon excess must be chosen concomitantly to optimize optical and electrical properties of LEDs. In a last part we show that LEDs’ properties can be enhanced using nitrogen-based matrices like oxynitrides or nitrides as hosts for Er3+
Bejbouji, Habiba. "Optimisation des matériaux d'électrodes dans les diodes électroluminescentes et les cellules solaires organiques." Phd thesis, Université Sciences et Technologies - Bordeaux I, 2009. http://tel.archives-ouvertes.fr/tel-01005217.
Full textBarbet, Adrien. "Pompage par LED de matériaux laser émettant dans le visible ou l'infrarouge proche." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLO020/document.
Full textSince the early 2000s, the lighting market is constantly growing up, pulling the Light-Emitting Diodes (LED) performance forward and pushing their cost down. LED is becoming an interesting source of light for laser pumping, between flashlamp and laser diodes. Thus, 40 years after the first demonstration, we suggest to revisit laser LED pumping. In this work, we demonstrated for the first time a Nd:YVO4 laser directly LED-pumped. LED radiance being limited, we took interest in LED-pumped luminescent concentrators. By developing Ce:YAG concentrator, we were able to overcome the LEDs irradiance by a factor of 20, leading to output irradiances similar to the laser diode ones (of the order of multi-kW/cm²). We validated the concept by pumping for the first time a Nd:YVO4 crystal and a Nd:YAG crystal with luminescent concentrators. Output energies of several mJ were obtained. In addition, we succeeded to get a passively Q-switched regime for the Nd:YAG laser by using saturable absorbers leading to unpreceded performance for a LED-pumped laser. Finally, LED-pumped concentrators pave the way for new possibilities for high-radiance source pumped media. Our first tests on titanium doped sapphire show that a laser gain with a LED pumping is achievable
Sergent, Alessandra. "Métallopolymères des éléments f : nouveaux matériaux hybrides semi-conducteurs phosphorescents pour les diodes électroluminescentes organiques." Phd thesis, Université Paris Sud - Paris XI, 2013. http://tel.archives-ouvertes.fr/tel-00840219.
Full textBejbouji, Habiba. "Optimisation des matériaux des électrodes dans les diodes électroluminescentes organiques et les cellules solaires organiques." Thesis, Bordeaux 1, 2009. http://www.theses.fr/2009BOR13897/document.
Full textThe optimization of hole injection materials in organic light emitting diodes (OLEDs) and organic photovoltaic cells (OPVCs) is reported. Water and organic solvent-based PANIs were used. We have studied the influence of the thickness, the morphology and the conductivity of PANI films in (OPVCs) performances. The results show that the conductivity and the thickness of the PANI film greatly affect (OLED) and (OPVCs) effectiveness. The dopant and the solvent used in the synthesis of PANI dispersion also play an important role. PANI and PEDOT dispersions as well as carbon nanotube were also used as electrodes without ITO. The effect of pH, conductivity, the work function, the nature of the dopant and the solvent in the injection property were analyzed
Romain, Maxime. "Nouveaux matériaux hôtes pour les dopants phosphorescents bleus : vers de nouvelles diodes électrophosphorescentes bleues hautes performances." Thesis, Rennes 1, 2014. http://www.theses.fr/2014REN1S116/document.
Full textOrganic light emitting diodes (OLEDs) represent an evolution of the light emitting diode (LED) technology in which light is emitted from an organic molecule. This work is focused on the synthesis and the study of new molecules, which will be used (i) as emissive layer in fluorescent OLEDs, or (ii) as host material in phosphorescent OLED (PhOLED). First of all an introduction of the important field of organic electronics is presented, followed by the presentation of the synthesis of new organic semi-conductors (3π-2spiro or 2π-1spiro hydrocarbons). A detailed analysis of their properties was performed and after incorporation in the devices, the performances of blue OLEDs and PhOLEDs are compared. The performances recorded attests that this molecular design is of great interest
Lee, Chih-Wen. "Étude des propriétés optiques et électriques des nanocomposites polymères pour les diodes électroluminescentes organiques." Nantes, 2008. http://www.theses.fr/2008NANT2019.
Full textHybrid nanocomposites have been investigated in this research work in order to examine the possibility to enhance the performance of organic devices in stability and in efficiency and to understand the physical processes induced by the inorganic part in the polymer matrix. The first realization was carried out with composites made of phenylenevinylene (PPV) derivatives and CdSe(ZnS) core/ shell nanocrystals. It was demonstrated that the brightness and yield of devices using the nanocomposites were strongly increased as compared to those obtained in devices using the polymer alone. Next, the role of the nanocrystals was studied by performing the measurements of trap states introduced in composite films. To easily compare the results with those reported in the literature, the polymer used here was poly[2-methoxy-5(2’-ethylhexyloxy)-1,4-phenylene vinylene](MEH-PPV) and the studied composite was (MEH-PPV+ CdSe(ZnS)). It was found that the enhancement of the performance of devices using the composites is in part, associated to the decrease in the trap density of the polymer. Finally, investigations of trap formation in composites were extended to polymer systems composed of 2-(4-biphenylyl)-5-(4-tert-butyl-phenyl)-(1,3,4-oxadiazole) (PBD) and poly (9-vinylcarbazole) (PVK) and containing phosphorescent-metal complex. It was demonstrated that incorporation of complex caused the suppression of existing defects in the polymer blend and introduced new traps. In all systems investigated, the devices using nanocomposites showed significant improvement of their electroluminescent performance. The doping seems to affect the transport process by reducing the trap density of the polymer