Relevant bibliographies by topics / Measurements on RF Power Amplifiers

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Measurements on RF Power Amplifiers'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Measurements on RF Power Amplifiers.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Measurements on RF Power Amplifiers"

1

Stauth, J. T., and S. R. Sanders. "Power Supply Rejection for RF Amplifiers: Theory and Measurements." IEEE Transactions on Microwave Theory and Techniques 55, no. 10 (October 2007): 2043–52. http://dx.doi.org/10.1109/tmtt.2007.905486.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Memioglu, O., O. Kazan, A. Karakuzulu, I. Turan, A. Gundel, F. Kocer, and O. A. Civi. "Development of X-Band Transceiver MMIC’s Using GaN Technology." Advanced Electromagnetics 8, no. 2 (February 24, 2019): 1–9. http://dx.doi.org/10.7716/aem.v8i2.1012.

Full text
Abstract:
This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of power. Low noise amplifier has more than 20 dB small signal gain with less than 2 dB noise figure. RF switch has 50 dB of isolation with less than 1 dB insertion loss.
APA, Harvard, Vancouver, ISO, and other styles
3

Karsli, Ozlem, Avni Aksoy, Caglar Kaya, Burak Koc, Mustafa Dogan, O. Faruk Elcim, and Mehmet Bozdogan. "High power RF operations studies at TARLA facility." Canadian Journal of Physics 97, no. 11 (November 2019): 1171–76. http://dx.doi.org/10.1139/cjp-2018-0778.

Full text
Abstract:
Turkish Accelerator and Radiation Laboratory (TARLA) is a facility capable of accelerating an electron beam up to 40 MeV. Two beamlines were proposed to generate free-electron laser radiation and bremsstrahlung. The accelerator employs two normal conducting cavities, so-called buncher cavities: subharmonic buncher (SHB) and fundamental buncher (FB), and two cryomodules that house two TESLA cavities each. SHB operates in 260 MHz and FB in 1.3 GHz, and is powered by 1.5 kW and 500 W radio frequency (RF) amplifiers, respectively. Each TESLA cavity is driven by 18 kW saturated high-power solid-state amplifiers (SSA). In addition, a L band pulse compressor system is designed and implemented at the facility to actively promote high-power RF research. Currently, setup of a resonant ring test bench is approved to test the RF components under high power RF conditions. This paper describes the TARLA high power RF, RF controller, and network structures. High power tests and measurements of the RF components of the TARLA beamline are given. Outcomes from the operation of the L band pulse compressor are explained, and the resonant ring test stand is stated as a summary.
APA, Harvard, Vancouver, ISO, and other styles
4

Ali, Firas M., Mahmuod H. Al-Muifraje, and Thamir R. Saeed. "An Analytic Design Approach to Inverse Class-F RF Power Amplifiers." Engineering and Technology Journal 38, no. 2A (February 25, 2020): 211–25. http://dx.doi.org/10.30684/etj.v38i2a.301.

Full text
Abstract:
The design of high efficiency inverse class-F (class-F-1) radio frequency (RF) power amplifiers includes extensive measurements to characterize the RF power device by means of the empirical load-pull test setup. This paper presents an alternative characterization approach based on evaluating the load impedances analytically at the desired harmonic frequencies for a high electron mobility transistor (HEMT) in terms of the internal and package elements of the active device. It additionally provides a method for extracting the parasitic elements of the power device as well as determining the optimum load-line resistance using the transistor manufacturer’s large signal model. A new topology for the output matching circuit is also proposed with its synthetic procedure to present the appropriate harmonic load impedances. To verify this methodology, a 900 MHz inverse class-F power amplifier circuit was designed and its performance was tested with the aid of the Keysight ADS software. The simulation results showed an output power of 38 dBm, a power gain of about 13 dB, DC-to-RF efficiency greater than 87%, and an acceptable level of linearity for both GSM and CDMA modulated signals.
APA, Harvard, Vancouver, ISO, and other styles
5

Jardel, Olivier, Jean-Claude Jacquet, Lény Baczkowski, Dominique Carisetti, Didier Lancereau, Maxime Olivier, Raphaël Aubry, et al. "InAlN/GaN HEMTs based L-band high-power packaged amplifiers." International Journal of Microwave and Wireless Technologies 6, no. 6 (February 25, 2014): 565–72. http://dx.doi.org/10.1017/s175907871400004x.

Full text
Abstract:
This paper presents power results of L-band packaged hybrid amplifiers using InAlN/GaN/SiC HEMT power dies. The high-power densities achieved both in pulsed and continuous wave (cw) modes confirm the interest of such technology for high-frequency, high-power, and high-temperature operation. We present here record RF power measurements for different versions of amplifiers. Up to 260 W, i.e. 3.6 W/mm, in pulsed (10 µs/10%) conditions, and 105 W, i.e. 2.9 W/mm, in cw conditions were achieved. Such results are made possible thanks to the impressive performances of InAlN/GaN transistors, even when operating at high temperatures. Unit cell transistors deliver output powers of 4.3 W/mm at Vds = 40 V in the cw mode of operation at the frequency of 2 GHz. The transistor process is described here, as well as the amplifiers design and measurements, with a particular focus to the thermal management aspects.
APA, Harvard, Vancouver, ISO, and other styles
6

François, Brecht, Peter Singerl, Andreas Wiesbauer, and Patrick Reynaert. "Efficiency and linearity analysis of a burst mode RF PA with direct filter connection." International Journal of Microwave and Wireless Technologies 3, no. 3 (April 4, 2011): 329–38. http://dx.doi.org/10.1017/s1759078711000328.

Full text
Abstract:
Burst mode operation is proposed as an efficiency improving technique for power amplifiers. The core idea is to modulate the amplitude of the envelope signal into a series of square-wave pulses such that the width of the signal burst or the total amount of pulses are varied according to the envelope. The phase information is still contained by the timing of the pulses. This work presents the efficiency and linearity analysis of burst mode radio frequency (RF)/power amplifier (PA). In addition, the efficiency performance is compared when the burst mode RF power amplifiers (PA) is connected to a wideband load or a narrowband filter. It is shown that burst mode PAs are more efficient than the conventional Class B PAs. To achieve an even more favorable efficiency, a transmission line is inserted between the output of the switching RF PA and the filter to improve the filter's impedance characteristic. Additionally, the efficiency and linearity of the burst mode PA with and without transmission line has been studied and simulated thoroughly. To demonstrate the validity of the efficiency formulas and linearity considerations, a printed circuit board (PCB)-mounted burst mode PA using a laterally diffused metal oxide semiconductor (LDMOS) transistor was fabricated. Measurements show a peak efficiency of 78% and 28.8 dBm of output power.
APA, Harvard, Vancouver, ISO, and other styles
7

Li, Mingyu, Songbai He, and Xiaodong Li. "Measurement-based memory polynomial behavioral modeling of RF power amplifiers." JOURNAL OF ELECTRONIC MEASUREMENT AND INSTRUMENT 2009, no. 8 (December 16, 2009): 49–55. http://dx.doi.org/10.3724/sp.j.1187.2009.08049.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Vuolevi, J. H. K., T. Rahkonen, and J. P. A. Manninen. "Measurement technique for characterizing memory effects in RF power amplifiers." IEEE Transactions on Microwave Theory and Techniques 49, no. 8 (2001): 1383–89. http://dx.doi.org/10.1109/22.939917.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Liu, Taijun, Slim Boumaiza, Abu B. Sesay, and Fadhel M. Ghannouchi. "Quantitative Measurements of Memory Effects in Wideband RF Power Amplifiers Driven by Modulated Signals." IEEE Microwave and Wireless Components Letters 17, no. 1 (January 2007): 79–81. http://dx.doi.org/10.1109/lmwc.2006.887286.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Liu, Leisong, Yuantian Lu, Xin Zhuang, Qunying Zhang, and Guangyou Fang. "Noise Analysis in Pre-Amplifier Circuits Associated to Highly Sensitive Optically-Pumped Magnetometers for Geomagnetic Applications." Applied Sciences 10, no. 20 (October 15, 2020): 7172. http://dx.doi.org/10.3390/app10207172.

Full text
Abstract:
This paper analyzes the noise sources in photoelectric detection circuits with several low-noise operational amplifiers cores. The fabricated circuits are low-noise pre-amplifiers that are used for optically pumped magnetometers. In the proposed circuits, the noise levels of equivalent output voltage are calculated, and the results are in accordance with measurements. With a cooperation of several operational amplifiers, we select LT1028 from linear technologies as the core for our detection circuit, which has an output signal-to-noise ratio of more than 2 × 105 up to the frequency of 100 kHz. By analyzing the individual noise sources in the detection circuit, the dominant noise source is confirmed as the photocurrent shot noise below 200 kHz. Beyond this frequency, the voltage noise source in the operational amplifier dominates. Besides, the lamp power, the radio frequency (RF) power, the temperature variations, and their influences on the sensitivity are studied and optimized. Finally, an optically pumped magnetometer with cesium head is established, showing an intrinsic sensitivity of 85 fT/√Hz. This sensitivity is realized under a geomagnetic magnetic field strength of 53 μT.
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Measurements on RF Power Amplifiers"

1

Al-Tahir, Hibah. "Multidimensional Measurements : on RF Power Amplifiers." Thesis, University of Gävle, Department of Technology and Built Environment, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-729.

Full text
Abstract:

Abstract

In this thesis, a measurement system was set to perform comprehensive measurements on RF power amplifiers. Data obtained from the measurements is then processed mathematically to obtain three dimensional graphs of the basic parameters affected or generated by nonlinearities of the amplifier i.e. gain, efficiency and distortion. Using a class AB amplifier as the DUT, two sets of signals – both swept in power level and frequency - were generated to validate the method, a two-tone signal and a WCDMA signal. The three dimensional plot gives a thorough representation of the behavior of the amplifier in any arbitrary range of spectrum and input level. Sweet spots are consequently easy to detect and analyze. The measurement setup can also yield other three dimensional plots of variations of gain, efficiency or distortion versus frequencies and input levels. Moreover, the measurement tool can be used to plot traditional two dimensional plots such as, input versus gain, frequency versus efficiency etc, making the setup a practical tool for RF amplifiers designers.

The test signals were generated by computer then sent to a vector signal generator that generates the actual signals fed to the amplifier. The output of the amplifier is fed to a vector signal analyzer then collected by computer to be handled. MATLAB® was used throughout the entire process.

The distortion considered in the case of the two-tone signals is the third order intermodulation distortion (IM3) whereas Adjacent Channel Power Ratio (ACPR) was considered in the case of WCDMA.

APA, Harvard, Vancouver, ISO, and other styles
2

Condo, Neira Edith Graciela. "Multidimensional Measurements on RF Power Amplifiers." Thesis, University of Gävle, Department of Technology and Built Environment, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-804.

Full text
Abstract:

Measurements are important to specify and verify properties for components, modules and systems. The specifications for a certain figure of merit are usually given in a numerical value or a two dimensional plot. However, there are some devices, like power amplifiers with certain figure of merits that depends on two or more working conditions, requiring a three dimensional plot.

This thesis presents a measurement method including graphical user interface of three parameters gain, efficiency and distortion when two-tone or WCDMA signals are used as an input to the PA.

APA, Harvard, Vancouver, ISO, and other styles
3

Haapala, Linus, and Aleksander Eriksson. "RF High Power Amplifiers for FREIA – ESS : design, fabrication and measurements." Thesis, Uppsala universitet, Institutionen för fysik och astronomi, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-263549.

Full text
Abstract:
The FREIA laboratory is a Facility for REsearch Instrumentation and Acceleratior development at Uppsala University, Sweden, constructed recently to test and develop superconducting accelerating cavities and their high power RF sources. FREIA's activity target initially the European Spallation Source (ESS) requirements for testing spoke cavities and RF power stations, typically 400 kW per cavity. Different power stations will be installed at the FREIA laboratory. The first one is based on vacuum tubes and the second on a combination of solid state modules. In this context, we investigate different related aspects, such as power generation and power combination. For the characterization of solid state amplifier modules in pulsed mode, at ESS specifications, we implement a Hot Sparameter measurement set-up, allowing in addition the measurement of different parameters such as gain and efficiency. Two new solid state amplifier modules are designed, constructed and measured at 352 MHz, using commercially available LDMOS transistors. Preliminary results show a drain efficiency of 71 % at 1300 W pulsed output power. The effects of changing quiescent current (IDq) and drain voltage are investigated, aswell as the possibilities to combine several modules together.
APA, Harvard, Vancouver, ISO, and other styles
4

Acimovic, Igor. "Contributions to the Design of RF Power Amplifiers." Thesis, Université d'Ottawa / University of Ottawa, 2013. http://hdl.handle.net/10393/24406.

Full text
Abstract:
In this thesis we introduce a two-way Doherty amplifier architecture with multiple feedbacks for digital predistortion based on impedance-inverting directional coupler (transcoupler). The tunable two-way Doherty amplifier with a tuned circulator-based impedance inverter is presented. Compact N-way Doherty architectures that subsume impedance inverter and offset line functionality into output matching networks are derived. Comprehensive N-way Doherty amplifier design and analysis techniques based on load-pull characterization of active devices and impedance modulation effects are developed. These techniques were then applied to the design of a two-way Doherty amplifier and a three-way Doherty amplifier which were manufactured and their performance measured and compared to the amplifier performance specifications and simulated results.
APA, Harvard, Vancouver, ISO, and other styles
5

Sriramagiri, Harsha. "B Spline Modelling of Non Linear Power Amplifiers based on LSNA measurememts." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1243536474.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Vuolevi, J. (Joel). "Analysis, measurement and cancellation of the bandwidth and amplitude dependence of intermodulation distortion in RF power amplifiers." Doctoral thesis, University of Oulu, 2001. http://urn.fi/urn:isbn:9514265149.

Full text
Abstract:
Abstract The main emphasis in modern RF power amplifier (PA) research is on improving linearity while at the same time maintaining reasonably good efficiency, for which purpose external linearization in the form of feedforward or predistortion is often used. Linearity and linearization can be considered from both a fundamental signal (amplitude and phase conversions, AM-AM & AM-PM) and an intermodulation distortion (IMD) regeneration point of view, and since a study of intermodulation gives more information on the behaviour of an amplifier, linearity is studied in this thesis by analysing the amplitude and phase of IM components under varying signal conditions, i.e. as functions of temperature, modulation bandwidth and amplitude. To study the behaviour of IM components analytically, a Volterra model including electro-thermal distortion mechanisms is developed and a simulation technique is introduced to determine how easily the amplifier can be linearized. An S-parameter characterization method for extracting the Volterra model and the simulation model is developed, and the amplitude and phase dependences of the IM components are shown by means of measurements performed by a novel technique developed here. The results show that the behaviour of IM components is more complicated than had commonly been expected. Three techniques are developed for eliminating the frequency dependence of IM components, impedance optimization, envelope filtering and envelope injection. In the envelope injection technique, a low frequency envelope signal is added to the input of the amplifier in order to improve both the bandwidth and amplitude range of the memoryless predistortion. The functionality of envelope injection is demonstrated by Volterra calculations, simulations and measurements, and the technique is applied to 1W, 1.8 GHz common-emitter BJT and common-source MESFET amplifiers. IM cancellation better than 20 dB is achieved over a wide range of bandwidths and amplitudes. It is concluded that an inherently linear amplifier is not necessarily easy to linearize any further using external techniques, but that the part of the distortion that varies with bandwidth and amplitude can be cancelled out using envelope injection and the remaining memoryless distortion by means of a simple polynomial RF predistorter. This results in good cancellation of distortion, and since both envelope injection and RF predistortion consume little power, both good efficiency and linearity can be achieved.
APA, Harvard, Vancouver, ISO, and other styles
7

Ku, Hyunchul. "Behavioral modeling of nonlinear RF power amplifiers for digital wireless communication systems with implications for predistortion linearization systems." Diss., Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-04052004-180035/unrestricted/ku%5Fhyunchul%5F200312%5Fphd.pdf.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Subramani, Nandha kumar. "Physics-based TCAD device simulations and measurements of GaN HEMT technology for RF power amplifier applications." Thesis, Limoges, 2017. http://www.theses.fr/2017LIMO0084/document.

Full text
Abstract:
Depuis plusieurs années, la technologie de transistors à effet de champ à haute mobilité (HEMT) sur Nitrure de Gallium (GaN) a démontré un potentiel très important pour la montée en puissance et en fréquence des dispositifs. Malheureusement, la présence des effets parasites dégrade les performances dynamiques des composants ainsi que leur fiabilité à long-terme. En outre, l'origine de ces pièges et leur emplacement physique restent incertains jusqu'à aujourd'hui. Une partie du travail de recherche menée dans cette thèse est axée sur la caractérisation des pièges existant dans les dispositifs HEMTs GaN à partir de mesures de paramètre S basse fréquence (BF), les mesures du bruit BF et les mesures I(V) impulsionnelles. Parallèlement, nous avons effectué des simulations physiques basées sur TCAD afin d'identifier la localisation des pièges dans le transistor. De plus, notre étude expérimentale de caractérisation et de simulation montre que les mesures BF pourraient constituer un outil efficace pour caractériser les pièges existant dans le buffer GaN, alors que la caractérisation de Gate-lag pourrait être plus utile pour identifier les pièges de barrière des dispositifs GaN HEMT. La deuxième partie de ce travail de recherche est axée sur la caractérisation des dispositifs AlN/GaN HEMT sur substrat Si et SiC. Une méthode d’extraction simple et efficace de la résistance canal et de la résistance de contact a été mise au point en utilisant conjointement la simulation physique et les techniques de caractérisation. Le principe de l’extraction de la résistance canal est basée sur la mesure de la résistance RON. Celle-ci est calculée à partir des mesures de courant de drain IDS et de la tension VDS pour différentes valeurs de températures En outre, nous avons procédé à une évaluation complète du comportement thermique de ces composants en utilisant conjointement les mesures et les simulations thermiques tridimensionnelles (3D) sur TCAD. La résistance thermique (RTH) a été extraite pour les transistors de différentes géométries à l'aide des mesures et ensuite validée par les simulations thermiques sur TCAD
GaN High Electron Mobility Transistors (HEMTs) have demonstrated their capabilities to be an excellent candidate for high power microwave and mm-wave applications. However, the presence of traps in the device structure significantly degrades the device performance and also detriments the device reliability. Moreover, the origin of these traps and their physical location remains unclear till today. A part of the research work carried out in this thesis is focused on characterizing the traps existing in the GaN/AlGaN/GaN HEMT devices using LF S-parameter measurements, LF noise measurements and drain-lag characterization. Furthermore, we have used TCAD-based physical device simulations in order to identify the physically confirm the location of traps in the device. Moreover, our experimental characterization and simulation study suggest that LF measurements could be an effective tool for characterizing the traps existing in the GaN buffer whereas gate-lag characterization could be more useful to characterize the AlGaN barrier traps of GaN HEMT devices. The second aspect of this research work is focused on characterizing the AlN/GaN/AlGaN HEMT devices grown on Si and SiC substrate. We attempt to characterize the temperature-dependent on-resistance (RON) extraction of these devices using on-wafer measurements and TCAD-based physical simulations. Furthermore, we have proposed a simplified methodology to extract the temperature and bias-dependent channel sheet resistance (Rsh) and parasitic series contact resistance (Rse) of AlN/GaN HEMT devices. Further, we have made a comprehensive evaluation of thermal behavior of these devices using on-wafer measurements and TCAD-based three-dimensional (3D) thermal simulations. The thermal resistance (RTH) has been extracted for various geometries of the device using measurements and validated using TCAD-thermal simulations
APA, Harvard, Vancouver, ISO, and other styles
9

Mahdavi, Sareh. "RF power amplifiers and MEMS varactors." Thesis, McGill University, 2007. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=112576.

Full text
Abstract:
This thesis is concerned with the design and implementation of radio frequency (RF) power amplifiers and micro-electromechanical systems---namely MEMS varactors. This is driven by the many wireless communication systems which are constantly moving towards increased integration, better signal quality, and longer battery life.
The power amplifier consumes most of the power in a receiver/transmitter system (transceiver), and its output signal is directly transmitted by the antenna without further modification. Thus, optimizing the PA for low power consumption, increased linearity, and compact integration is highly desirable.
Micro-electromechanical systems enable new levels of performance in radio-frequency integrated circuits, which are not readily available via conventional IC technologies. They are good candidates to replace lossy, low Q-factor off-chip components, which have traditionally been used to implement matching networks or output resonator tanks in class AB, class F, or class E power amplifiers. The MEMS technologies also make possible the use of new architectures, with the possibility of flexible re-configurability and tunability for multi-band and/or multi-standard applications.
The major effort of this thesis is focused on the design and fabrication of an RF frequency class AB power amplifier in the SiGe BiCMOS 5HP technology, with the capability of being tuned with external MEMS varactors. The latter necessitated the exploration of wide-tuning range MEMS variable capacitors, with prototypes designed and fabricated in the Metal-MUMPS process.
An attempt is made to integrate the power amplifier chip and the MEMS die in the same package to provide active tuning of the power amplifier matching network, in order to keep the efficiency of the PA constant for different input power levels and load conditions.
Detailed simulation and measurement results for all circuits and MEMS devices are reported and discussed.
APA, Harvard, Vancouver, ISO, and other styles
10

McRory, John Godfrey. "Stacked GaAs FET RF power amplifiers." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape17/PQDD_0002/NQ31049.pdf.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Books on the topic "Measurements on RF Power Amplifiers"

1

RF power amplifiers. Chichester, West Sussex, U.K: Wiley, 2008.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
2

Kazimierczuk, Marian K. RF Power Amplifiers. Chichester, UK: John Wiley & Sons, Ltd, 2014. http://dx.doi.org/10.1002/9781118844373.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

O, Sokal Nathan, ed. Switchmode RF power amplifiers. Amsterdam: Elsevier/Newnes, 2007.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

Solar Ruiz, Hector, and Roc Berenguer Pérez. Linear CMOS RF Power Amplifiers. Boston, MA: Springer US, 2014. http://dx.doi.org/10.1007/978-1-4614-8657-2.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Schreurs, Dominique. RF power amplifier behavioral modeling. Cambridge: Cambridge University Press, 2008.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
6

Schreurs, Dominique. RF power amplifier behavioral modeling. Cambridge: Cambridge University Press, 2008.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
7

RF power amplifiers for wireless communications. Boston: Artech House, 1999.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
8

RF power amplifers for wireless communications. 2nd ed. Boston, MA: Artech House, 2006.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
9

H, Lee Thomas, ed. Feedback linearization of RF power amplifiers. Boston: Kluwer, 2004.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
10

author, Grebennikov Andrei 1956, ed. Distributed power amplifiers for RF and microwave communications. Boston: Artech House, 2015.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Book chapters on the topic "Measurements on RF Power Amplifiers"

1

Kratochvil, Tomas, Jiri Petrzela, Roman Sotner, Jiri Drinovsky, Tomas Gotthans, Aarnout Wieers, Renaud Gillon, Pascal Reynier, and Yannick Poupin. "Measurements for RF Amplifiers, Bond Wire Fusing and MOS Power Cells." In Mathematics in Industry, 487–515. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-30726-4_21.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Dal Fabbro, Paulo Augusto, and Maher Kayal. "Appendix A: Measurement Setups and Additional Screenshots." In Linear CMOS RF Power Amplifiers for Wireless Applications, 127–36. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-9361-5_9.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Dal Fabbro, Paulo Augusto, and Maher Kayal. "Measurement Results for the Dynamic Supply CMOS RF Power Amplifier." In Linear CMOS RF Power Amplifiers for Wireless Applications, 39–60. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-9361-5_4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Dal Fabbro, Paulo Augusto, and Maher Kayal. "Measurement Results for the Frequency-Tunable CMOS RF Power Amplifier." In Linear CMOS RF Power Amplifiers for Wireless Applications, 101–21. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-9361-5_7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Yip, Peter C. L. "Power Amplifiers." In High-Frequency Circuit Design and Measurements, 119–38. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-011-6950-9_7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Sjöland, Henrik. "Inductorless RF CMOS Power Amplifiers." In Highly Linear Integrated Wideband Amplifiers, 129–43. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4615-4056-4_9.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Solar Ruiz, Hector, and Roc Berenguer Pérez. "Power Amplifier Design." In Linear CMOS RF Power Amplifiers, 101–51. Boston, MA: Springer US, 2013. http://dx.doi.org/10.1007/978-1-4614-8657-2_6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Shirvani, Alireza, and Bruce A. Wooley. "RF Power Amplifier Specifications." In Design and Control of RF Power Amplifiers, 25–46. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4757-3754-7_3.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Shirvani, Alireza, and Bruce A. Wooley. "RF Power Amplifier Classifications." In Design and Control of RF Power Amplifiers, 47–69. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4757-3754-7_4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Solar Ruiz, Hector, and Roc Berenguer Pérez. "Power Amplifier Fundamentals: Metrics." In Linear CMOS RF Power Amplifiers, 11–28. Boston, MA: Springer US, 2013. http://dx.doi.org/10.1007/978-1-4614-8657-2_2.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Measurements on RF Power Amplifiers"

1

Altet, Josep, Diego Mateo, Didac Gomez, Xavier Perpina, Miquel Vellvehi, and Xavier Jorda. "DC temperature measurements for power gain monitoring in RF power amplifiers." In 2012 IEEE International Test Conference (ITC). IEEE, 2012. http://dx.doi.org/10.1109/test.2012.6401589.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Welker, Richard, Sule Ozev, and Jennifer Kitchen. "Incorporating RF test measurements for efficient design flow of GaN-based power amplifiers." In 2018 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR). IEEE, 2018. http://dx.doi.org/10.1109/pawr.2018.8310070.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Vandermot, Koen, Yves Rolain, Gerd Vandersteen, Rik Pintelon, Francesco Ferranti, and Tom Dhaene. "A power-scalable linearized model for RF power amplifiers starting from S-parameter measurements." In 2009 IEEE MTT-S International Microwave Symposium Digest (MTT). IEEE, 2009. http://dx.doi.org/10.1109/mwsym.2009.5165804.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Fager, Christian, Pedro Miguel Lavrador, Maciej Myslirski, Anding Zhu, Hossein M. Nemati, Jose Carlos Pedro, and Dominique Schreurs. "System level modelling of RF power amplifiers based on large-signal measurements." In 2007 European Microwave Integrated Circuit Conference. IEEE, 2007. http://dx.doi.org/10.1109/emicc.2007.4412665.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Cho, Choongeol, Yus Ko, and William R. Eisenstadt. "IIP3 estimation from gain compression of RF power amplifiers." In 2005 66th ARFTG Conference Measurement Conference Digital Communication System Metrics (ARFTG). IEEE, 2005. http://dx.doi.org/10.1109/arftg.2005.8373121.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Yasser Hussein and Mohamed Megahed. "Measurements and macro-modeling of differential impedance and RF power of differential amplifiers." In 2007 IEEE Antennas and Propagation International Symposium. IEEE, 2007. http://dx.doi.org/10.1109/aps.2007.4395560.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Hussein, Osama, Khair Al Shamaileh, Vijay Devabhaktuni, and Peter Aaen. "Wideband impedance-varying n-way wilkinson power divider/combiner for rf power amplifiers." In 2016 88th ARFTG Microwave Measurement Conference (ARFTG). IEEE, 2016. http://dx.doi.org/10.1109/arftg.2016.7839733.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Rafael-Valdivia, G., and Omar Castellanos-Ballesteros. "Methodology for modelling, design and implementation of RF power amplifiers based on pulsed measurements." In 2019 49th European Microwave Conference (EuMC). IEEE, 2019. http://dx.doi.org/10.23919/eumc.2019.8910743.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Liu, Taijun, Slim Boumaiza, and Fadhel M. Ghannouchi. "An integrated nonlinear behavior modeling system for RF power amplifiers/transmitters." In 2007 70th ARFTG Microwave Measurement Conference (ARFTG). IEEE, 2007. http://dx.doi.org/10.1109/arftg.2007.8376235.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Vanaverbeke, Frederik, Philip Saint-erne, and Kevin Kim. "Evidence for the Self-Enhanced Class J PA Operating Mode From Harmonic Load-Pull Measurements." In 2019 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR). IEEE, 2019. http://dx.doi.org/10.1109/pawr.2019.8708737.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "Measurements on RF Power Amplifiers"

1

Rutledge, David. High-Efficiency, Class-E RF Power Amplifiers. Fort Belvoir, VA: Defense Technical Information Center, April 2001. http://dx.doi.org/10.21236/ada393787.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Rose, M. F., L. C. Chow, and J. H. Johnson. Thermal management of space-based, high-power solid-state RF amplifiers. Final report. Office of Scientific and Technical Information (OSTI), August 1990. http://dx.doi.org/10.2172/376392.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Allen, J. Wayde. Switched-coupler measurements for high-power RF calibrations. Gaithersburg, MD: National Bureau of Standards, 1999. http://dx.doi.org/10.6028/nist.tn.1510.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Measurements on RF Power Amplifiers' for particular source types:
Journal articles Dissertations / Theses Books
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography