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Journal articles on the topic 'Measurements on RF Power Amplifiers'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Stauth, J. T., and S. R. Sanders. "Power Supply Rejection for RF Amplifiers: Theory and Measurements." IEEE Transactions on Microwave Theory and Techniques 55, no. 10 (October 2007): 2043–52. http://dx.doi.org/10.1109/tmtt.2007.905486.

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2

Memioglu, O., O. Kazan, A. Karakuzulu, I. Turan, A. Gundel, F. Kocer, and O. A. Civi. "Development of X-Band Transceiver MMIC’s Using GaN Technology." Advanced Electromagnetics 8, no. 2 (February 24, 2019): 1–9. http://dx.doi.org/10.7716/aem.v8i2.1012.

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This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of power. Low noise amplifier has more than 20 dB small signal gain with less than 2 dB noise figure. RF switch has 50 dB of isolation with less than 1 dB insertion loss.

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3

Karsli, Ozlem, Avni Aksoy, Caglar Kaya, Burak Koc, Mustafa Dogan, O. Faruk Elcim, and Mehmet Bozdogan. "High power RF operations studies at TARLA facility." Canadian Journal of Physics 97, no. 11 (November 2019): 1171–76. http://dx.doi.org/10.1139/cjp-2018-0778.

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Turkish Accelerator and Radiation Laboratory (TARLA) is a facility capable of accelerating an electron beam up to 40 MeV. Two beamlines were proposed to generate free-electron laser radiation and bremsstrahlung. The accelerator employs two normal conducting cavities, so-called buncher cavities: subharmonic buncher (SHB) and fundamental buncher (FB), and two cryomodules that house two TESLA cavities each. SHB operates in 260 MHz and FB in 1.3 GHz, and is powered by 1.5 kW and 500 W radio frequency (RF) amplifiers, respectively. Each TESLA cavity is driven by 18 kW saturated high-power solid-state amplifiers (SSA). In addition, a L band pulse compressor system is designed and implemented at the facility to actively promote high-power RF research. Currently, setup of a resonant ring test bench is approved to test the RF components under high power RF conditions. This paper describes the TARLA high power RF, RF controller, and network structures. High power tests and measurements of the RF components of the TARLA beamline are given. Outcomes from the operation of the L band pulse compressor are explained, and the resonant ring test stand is stated as a summary.

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4

Ali, Firas M., Mahmuod H. Al-Muifraje, and Thamir R. Saeed. "An Analytic Design Approach to Inverse Class-F RF Power Amplifiers." Engineering and Technology Journal 38, no. 2A (February 25, 2020): 211–25. http://dx.doi.org/10.30684/etj.v38i2a.301.

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The design of high efficiency inverse class-F (class-F-1) radio frequency (RF) power amplifiers includes extensive measurements to characterize the RF power device by means of the empirical load-pull test setup. This paper presents an alternative characterization approach based on evaluating the load impedances analytically at the desired harmonic frequencies for a high electron mobility transistor (HEMT) in terms of the internal and package elements of the active device. It additionally provides a method for extracting the parasitic elements of the power device as well as determining the optimum load-line resistance using the transistor manufacturer’s large signal model. A new topology for the output matching circuit is also proposed with its synthetic procedure to present the appropriate harmonic load impedances. To verify this methodology, a 900 MHz inverse class-F power amplifier circuit was designed and its performance was tested with the aid of the Keysight ADS software. The simulation results showed an output power of 38 dBm, a power gain of about 13 dB, DC-to-RF efficiency greater than 87%, and an acceptable level of linearity for both GSM and CDMA modulated signals.

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5

Jardel, Olivier, Jean-Claude Jacquet, Lény Baczkowski, Dominique Carisetti, Didier Lancereau, Maxime Olivier, Raphaël Aubry, et al. "InAlN/GaN HEMTs based L-band high-power packaged amplifiers." International Journal of Microwave and Wireless Technologies 6, no. 6 (February 25, 2014): 565–72. http://dx.doi.org/10.1017/s175907871400004x.

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This paper presents power results of L-band packaged hybrid amplifiers using InAlN/GaN/SiC HEMT power dies. The high-power densities achieved both in pulsed and continuous wave (cw) modes confirm the interest of such technology for high-frequency, high-power, and high-temperature operation. We present here record RF power measurements for different versions of amplifiers. Up to 260 W, i.e. 3.6 W/mm, in pulsed (10 µs/10%) conditions, and 105 W, i.e. 2.9 W/mm, in cw conditions were achieved. Such results are made possible thanks to the impressive performances of InAlN/GaN transistors, even when operating at high temperatures. Unit cell transistors deliver output powers of 4.3 W/mm at Vds = 40 V in the cw mode of operation at the frequency of 2 GHz. The transistor process is described here, as well as the amplifiers design and measurements, with a particular focus to the thermal management aspects.

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6

François, Brecht, Peter Singerl, Andreas Wiesbauer, and Patrick Reynaert. "Efficiency and linearity analysis of a burst mode RF PA with direct filter connection." International Journal of Microwave and Wireless Technologies 3, no. 3 (April 4, 2011): 329–38. http://dx.doi.org/10.1017/s1759078711000328.

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Burst mode operation is proposed as an efficiency improving technique for power amplifiers. The core idea is to modulate the amplitude of the envelope signal into a series of square-wave pulses such that the width of the signal burst or the total amount of pulses are varied according to the envelope. The phase information is still contained by the timing of the pulses. This work presents the efficiency and linearity analysis of burst mode radio frequency (RF)/power amplifier (PA). In addition, the efficiency performance is compared when the burst mode RF power amplifiers (PA) is connected to a wideband load or a narrowband filter. It is shown that burst mode PAs are more efficient than the conventional Class B PAs. To achieve an even more favorable efficiency, a transmission line is inserted between the output of the switching RF PA and the filter to improve the filter's impedance characteristic. Additionally, the efficiency and linearity of the burst mode PA with and without transmission line has been studied and simulated thoroughly. To demonstrate the validity of the efficiency formulas and linearity considerations, a printed circuit board (PCB)-mounted burst mode PA using a laterally diffused metal oxide semiconductor (LDMOS) transistor was fabricated. Measurements show a peak efficiency of 78% and 28.8 dBm of output power.

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7

Li, Mingyu, Songbai He, and Xiaodong Li. "Measurement-based memory polynomial behavioral modeling of RF power amplifiers." JOURNAL OF ELECTRONIC MEASUREMENT AND INSTRUMENT 2009, no. 8 (December 16, 2009): 49–55. http://dx.doi.org/10.3724/sp.j.1187.2009.08049.

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8

Vuolevi, J. H. K., T. Rahkonen, and J. P. A. Manninen. "Measurement technique for characterizing memory effects in RF power amplifiers." IEEE Transactions on Microwave Theory and Techniques 49, no. 8 (2001): 1383–89. http://dx.doi.org/10.1109/22.939917.

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9

Liu, Taijun, Slim Boumaiza, Abu B. Sesay, and Fadhel M. Ghannouchi. "Quantitative Measurements of Memory Effects in Wideband RF Power Amplifiers Driven by Modulated Signals." IEEE Microwave and Wireless Components Letters 17, no. 1 (January 2007): 79–81. http://dx.doi.org/10.1109/lmwc.2006.887286.

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10

Liu, Leisong, Yuantian Lu, Xin Zhuang, Qunying Zhang, and Guangyou Fang. "Noise Analysis in Pre-Amplifier Circuits Associated to Highly Sensitive Optically-Pumped Magnetometers for Geomagnetic Applications." Applied Sciences 10, no. 20 (October 15, 2020): 7172. http://dx.doi.org/10.3390/app10207172.

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This paper analyzes the noise sources in photoelectric detection circuits with several low-noise operational amplifiers cores. The fabricated circuits are low-noise pre-amplifiers that are used for optically pumped magnetometers. In the proposed circuits, the noise levels of equivalent output voltage are calculated, and the results are in accordance with measurements. With a cooperation of several operational amplifiers, we select LT1028 from linear technologies as the core for our detection circuit, which has an output signal-to-noise ratio of more than 2 × 105 up to the frequency of 100 kHz. By analyzing the individual noise sources in the detection circuit, the dominant noise source is confirmed as the photocurrent shot noise below 200 kHz. Beyond this frequency, the voltage noise source in the operational amplifier dominates. Besides, the lamp power, the radio frequency (RF) power, the temperature variations, and their influences on the sensitivity are studied and optimized. Finally, an optically pumped magnetometer with cesium head is established, showing an intrinsic sensitivity of 85 fT/√Hz. This sensitivity is realized under a geomagnetic magnetic field strength of 53 μT.

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11

Ahmed, Sajjad, Mohammad Saad El Dine, Guillaume Neveux, Tibault Reveyrand, Denis Barataud, and Jean-Michel Nebus. "4-Channel, time-domain measurement system using track and hold amplifier for the characterization and linearization of high-power amplifiers." International Journal of Microwave and Wireless Technologies 4, no. 1 (November 17, 2011): 71–79. http://dx.doi.org/10.1017/s1759078711000973.

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We propose in this paper a 4-channel time-domain test bench for the characterization and linearity enhancement of microwave power amplifiers (PAs). The proposed time-domain measurement system utilizes four track and hold amplifiers (THAs) for direct subsampling of radiofrequency (RF) signals. The use of wideband THAs to replace samplers or mixers enables reducing analog IF circuit complexity. It permits direct digitization of RF signals like CW, two-tone and pulsed modulated signals, bringing more flexibility in the receiver's performance by enhancing the dynamic range and bandwidth. This test bench is capable of completely extracting the phase, amplitude, and transfer characteristics of non-linear devices excited with CW or modulated RF signals. In this work, two-tone transfer characteristics of a 50 W GaN HEMT Nitronex PA were extracted and processed for applying digital pre-distortion linearization to enhance linearity performance. Time-domain envelope and carrier waveforms (voltage and current) along with third-order inter-modulation distortion (IMD) products with and without digital pre-distortion scheme are also presented.

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12

Nam, Hyosung, Taejoo Sim, and Junghyun Kim. "A 2.4 GHz 20 W 8-channel RF Source Module with Solid-State Power Amplifiers for Plasma Generators." Electronics 9, no. 9 (August 26, 2020): 1378. http://dx.doi.org/10.3390/electronics9091378.

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This paper presents a novel multi-channel type RF source module with solid-state power amplifiers for plasma generators. The proposed module is consisted of a DC control part, RF source generation part, and power amplification part. A 2-stage power amplifier (PA) is combined with a gallium arsenide hetero bipolar transistor (GaAs HBT) as a drive PA and a gallium nitride high electron mobility transistor (GaN HEMT) as a main PA, respectively. By employing 8 channels, the proposed module secures better area coverage on the wafer during semiconductor processes such as chemical vapor deposition (CVD), etching and so on. Additionally, each channel can be maintained at a constant output power because they have a gain factor tunable by a variable gain amplifier (VGA). For that reason, it is possible to have uniform plasma density on the wafer. The operating sequence is controllable by an external DC control port. Moreover, copper–tungsten (CuW) heat spreaders were applied to prevent RF performance degradation from heat generated by the high power amplifier (HPA), and a water jacket was implemented at the bottom of the power amplification part for liquid cooling. Drawing upon the measurement results, the output power at each channel was over 43 dBm (20 W) and the drain efficiency was more than 50% at 2.4 GHz.

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13

BACHIR, SMAIL, NICUSOR CALINOIU, and CLAUDE DUVANAUD. "LINEARIZATION OF RF POWER AMPLIFIERS USING ADAPTIVE KALMAN FILTERING ALGORITHM." Journal of Circuits, Systems and Computers 20, no. 06 (October 2011): 1001–18. http://dx.doi.org/10.1142/s0218126611007724.

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In this paper, a new linearization algorithm of power amplifier (PA), based on Kalman filtering theory is proposed for obtaining fast convergence of the adaptive digital predistortion. The proposed method uses the real-time digital processing of baseband signals to compensate the nonlinearities and memory effects in radio-frequency power amplifier. To reduce the complexity of computing in classical Kalman filtering, a sliding time-window has been inserted which combines offline measurement and online parameter estimation with high sampling time to track the changes in the PA characteristics. The performance of the proposed linearization scheme is evaluated through simulation and experiments. Using digital signal processing, experimental results with commercial power amplifier are presented for multicarrier signals to demonstrate the effectiveness of this new approach.

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14

Oppermann, M., K. Widmer, R. Reber, H. Sledzik, P. Schuh, U. Schmid, B. Bunz, S. Chartier, K. Drüeke, and M. Bedenbecker. "GaN based RF Modules - Demands & Needs for Packaging." International Symposium on Microelectronics 2011, no. 1 (January 1, 2011): 000896–99. http://dx.doi.org/10.4071/isom-2011-tha1-paper4.

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GaN/SiC based powerbars and MMICs are the youngest semiconductor devices which have arrived in the field of Radio Frequency modules and applications, e.g. radar, communication links and high power transmitters and amplifiers. Nearly 5 years ago, the first GaN devices were used in the fields of telecommunication equipment, mainly in base-station amplifiers and today GaN devices are more and more part of modern radar applications, like T/R (Transmit/Receive) modules in AESA (Active Electronically Scanned Array) antennas. The main advantages of GaN/SiC semiconductor devices in comparison to GaAs-devices are the higher bandwidth, higher robustness level and the higher operation voltage. Another big issue of GaN is the higher power density, with in minimum 4 times higher values compared to GaAs. Therefore the assembly of GaN MMICs and powerbars on heatsinks and module-baseplates is a big challenge for soldering technology. An absolute minimum of voids between backside of the GaN/SiC devices and the heatsink is necessary to guarantee an optimised heat transfer during operation. Different package materials and technologies are on the market and big international package suppliers deal with new material combinations, like sandwich structures of Cu and Mo. Materials like Al-diamond are used for heatsink materials and with special tests and measurements the results of heat transfer studies will be shown. In this paper examples of power amplifiers, operating in the frequency range of 2–6 GHz and 6–18GHz, and a typical X-Band Frontend will be shown and the RF results will be discussed.

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15

Seung-Yup Lee, Yong-Sub Lee, and Yoon-Ha Jeong. "A novel phase measurement technique for IM3 components in RF power amplifiers." IEEE Transactions on Microwave Theory and Techniques 54, no. 1 (January 2006): 451–57. http://dx.doi.org/10.1109/tmtt.2005.860498.

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16

Pascual Campo, Pablo, Vesa Lampu, Alexandre Meirhaeghe, Jani Boutellier, Lauri Anttila, and Mikko Valkama. "Digital Predistortion for 5G Small Cell: GPU Implementation and RF Measurements." Journal of Signal Processing Systems 92, no. 5 (December 21, 2019): 475–86. http://dx.doi.org/10.1007/s11265-019-01502-4.

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AbstractIn this paper, we present a high data rate implementation of a digital predistortion (DPD) algorithm on a modern mobile multicore CPU containing an on-chip GPU. The proposed implementation is capable of running in real-time, thanks to the execution of the predistortion stage inside the GPU, and the execution of the learning stage on a separate CPU core. This configuration, combined with the low complexity DPD design, allows for more than 400 Msamples/s sample rates. This is sufficient for satisfying 5G new radio (NR) base station radio transmission specifications in the sub-6 GHz bands, where signal bandwidths up to 100 MHz are specified. The linearization performance is validated with RF measurements on two base station power amplifiers at 3.7 GHz, showing that the 5G NR downlink emission requirements are satisfied.

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17

NASEH, SASAN, and M. JAMAL DEEN. "RF CMOS RELIABILITY." International Journal of High Speed Electronics and Systems 11, no. 04 (December 2001): 1249–95. http://dx.doi.org/10.1142/s0129156401001088.

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In this chapter the effects of hot carrier on the reliability of NMOS transistors are investigated. First, it is explained why the hot carrier issue can be important in RF CMOS circuits. Important mechanisms of hot carrier generation are reviewed and some of the techniques used in the measurement of hot carrier damages are explained. Next, results of measurement of DC hot carrier stress on the NMOS transistors are presented. The main focus here is the RF performance of the NMOS devices and circuits mode of them, but DC parameters of the device such as its I-V characteristics and threshold voltage are presented, as they directly affect the RF performance. Finally, using the measurements of hot carrier effects on single NMOS transistors, the effects of hot carriers on three parameters of a low noise amplifier, matching, power gain and stability, are predicted using circuit simulation.

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18

Al-Kanan, Haider, and Fu Li. "A Simplified Accuracy Enhancement to the Saleh AM/AM Modeling and Linearization of Solid-State RF Power Amplifiers." Electronics 9, no. 11 (October 31, 2020): 1806. http://dx.doi.org/10.3390/electronics9111806.

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The Saleh behavioral model exhibits high prediction accuracy for nonlinearity of traveling-wave tube power amplifiers (TWT-PAs). However, the accuracy of the Saleh model degrades when modeling solid-state power amplifiers (SSPAs) technology. In addition, the polynomial expansion of the Saleh model consists of only odd-order terms as analyzed in this work. This paper proposes a novel model accuracy enhancement for the Saleh amplitude-to-amplitude (AM/AM) model when applied to radio frequency (RF) SSPAs. The proposed model enhancement accounts for the second-order intermodulation distortion, which is an important nonlinearity challenge in wideband wireless communications. The proposed static AM/AM model is a three-parameter rational function, which exhibits low complexity compared to the state-of-the-art behavioral models. A transpose architecture of finite-impulse digital filter is used to quantify the memory effect in SSPAs. A least-squares method is used for extracting all the model parameters. A linearization technique using a three-parameter digital predistortion model is also calculated to compensate for the AM/AM nonlinear distortion in SSPAs. Finally, the identification and evaluation of the enhanced Saleh model is presented based on measurements of RF SSPAs.

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19

Zakka El Nashef, Georges, François Torrès, Sébastien Mons, Tibault Reveyrand, Edouard Ngoya, Thierry Monédière, Marc Thévenot, and Raymond Quéré. "An accurate modeling technique for antennas and nonlinear RF power amplifier mixed simulation." International Journal of Microwave and Wireless Technologies 3, no. 6 (September 27, 2011): 647–55. http://dx.doi.org/10.1017/s175907871100081x.

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The design of agile active antennas requires an efficient modeling methodology in order to quantify the impact of other components on the array radiation pattern, and especially the influence of power amplifiers (PA). Therefore, the performance prediction of PA on TX chains is of prime importance. This article describes two different approaches for active antenna applications. The first one concentrates on PA macro-modeling, which takes into account a large output load impedance mismatch with a voltage standing wave ratio up to 4:1. A PA behavioral model based on nonlinear scattering functions was developed and extracted from CW measurements. The model validity was checked by comparison with the measured data. The second one describes a novel technique for synthesizing a given radiation pattern, whereas taking into account the mutual coupling and calculated matching impedances (ZL ≠ 50 Ω) of each antenna in the array according to frequency and pointing angle.

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20

Hühn, Florian, Andreas Wentzel, and Wolfgang Heinrich. "A new modulator for digital RF power amplifiers utilizing a wavetable approach." International Journal of Microwave and Wireless Technologies 9, no. 6 (July 2017): 1251–60. http://dx.doi.org/10.1017/s1759078717000770.

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This paper presents for the first time a wavetable-based coding scheme to generate a high-speed binary input signal for digital RF power amplifiers. The approach maximizes the utilization of the time domain handling capabilities of the pulse forming circuit. Key features are a greatly improved output spectrum purity in comparison with common digital modulators, the ability to adjust the modulator to any given pulse forming hardware and a built-in signal correction option that comes without additional computational cost. To give a first impression on the modulators behavior and its possibilities to adapt to different hardware constraints, simulations are carried out for different parameter variations and for different baseband bandwidths. Furthermore, the proposed concept is emulated with an arbitrary waveform generator to gather additional measurement data. For a 5 MHz wideband code division multiple access (WCDMA) signal (6.5 dB peak-to-average power ratio) at 900 MHz, an error vector magnitude (EVM) of 0.26% and better than >58 dB adjacent channel leakage ratio (ACLR) were recorded. To the authors’ knowledge, these are the best values achieved so far for a single-bit coding scheme without digital predistortion that still maintains maximum power coding efficiency.

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21

Fang, Wen-Rao, Wen-Hua Huang, Wen-Hui Huang, Chao Fu, Lu-Lu Wang, Tian-Wei He, and Jian-Guo Ma. "A Simple and Universal Measurement Method for the Efficiency of Pulsed RF Power Amplifiers." IEEE Access 8 (2020): 59200–59210. http://dx.doi.org/10.1109/access.2020.2976651.

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22

Chéron, Jérôme, Michel Campovecchio, Denis Barataud, Tibault Reveyrand, Michel Stanislawiak, Philippe Eudeline, and Didier Floriot. "Electrical modeling of packaged GaN HEMT dedicated to internal power matching in S-band." International Journal of Microwave and Wireless Technologies 4, no. 5 (July 16, 2012): 495–503. http://dx.doi.org/10.1017/s1759078712000530.

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The electrical modeling of power packages is a major issue for designers of high-efficiency hybrid power amplifiers. This paper reports the synthesis and the modeling of a packaged Gallium nitride (GaN) High electron mobility transistor (HEMT) associating a nonlinear model of the GaN HEMT die with an equivalent circuit model of the package. The extraction procedure is based on multi-bias S-parameter measurements of both packaged and unpackaged (on-wafer) configurations. Two different designs of 20 W packaged GaN HEMTs illustrate the modeling approach that is validated by time-domain load-pull measurements in S-band. The advantage of the electrical modeling dedicated to packaged GaN HEMTs is to enable a die-package co-design for power matching. Internal matching elements such as Metal oxide semiconductor (MOS) capacitors, Monolithic microwave integrated circuits (MMICs), and bond wires can be separately modeled to ensure an efficient optimization of the package for high power Radio frequency (RF) applications.

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23

Chao, P. C., Kanin Chu, Jose Diaz, Carlton Creamer, Scott Sweetland, Ray Kallaher, Craig McGray, Glen D. Via, and John Blevins. "GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz." MRS Advances 1, no. 2 (2016): 147–55. http://dx.doi.org/10.1557/adv.2016.176.

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ABSTRACTA new device-first low-temperature bonded gallium nitride (GaN)-on-diamond high-electronic mobility transistor (HEMT) technology with state-of-the-art, radio frequency (RF) power performance is described. In this process, the devices were first fabricated on a GaN-on-silicon carbide (SiC) epitaxial wafer and were subsequently separated from the SiC and bonded onto a high-thermal-conductivity diamond substrate. Thermal measurements showed that the GaN-on-diamond devices maintained equivalent or lower junction temperatures than their GaN-on-SiC counterparts while delivering more than three-times higher RF power within the same active area. Such results demonstrate that the GaN device transfer process is capable of preserving intrinsic transistor electrical performance while taking advantage of the excellent thermal properties of diamond substrates. Preliminary step-stress and room-temperature, steady-state life testing shows that the low-temperature bonded GaN-on-diamond device has no inherently reliability limiting factor. GaN-on-diamond is ideally suited to wideband electronic warfare (EW) power amplifiers as they are the most thermally challenging due to continuous wave (CW) operation and the reduced power-added efficiency obtained with ultra-wide bandwidth circuit implementations.

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24

Seok Joo Doo, P. Roblin, V. Balasubramanian, R. Taylor, K. Dandu, J. Strahler, G. H. Jessen, and J. P. Teyssier. "Pulsed Active Load–Pull Measurements for the Design of High-Efficiency Class-B RF Power Amplifiers With GaN HEMTs." IEEE Transactions on Microwave Theory and Techniques 57, no. 4 (April 2009): 881–89. http://dx.doi.org/10.1109/tmtt.2009.2015111.

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Lin, Yen-Pin, Yi Nan Zhong, and Yue-ming Hsin. "Current Transient Study of RF GaN HEMTs Biased at Quiescent Point of VDS = 28 V and ID = 100 mA/mm under Different Temperatures." MRS Advances 4, no. 09 (2019): 575–80. http://dx.doi.org/10.1557/adv.2019.151.

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ABSTRACTThe current transient was studied on AlGaN/GaN HEMTs for RF power amplifiers under different temperatures. The current transient measurements include two different approaches. One is to measure the current transient from off-state (without bias) to a quiescent point (Q-point). Different transient behaviors were observed while switching to different Q-points. Another one is to measure the current transient from different currents to the Q-point of VDS = 28 V and ID = 100 mA/mm. The different currents before switching to Q-point of VDS = 28 V and ID = 100 mA/mm show the different transient characteristics. Most of the current transient demonstrates temperature independence in this study.

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Sekharbabu, B., K. Narsimha Reddy, and S. Sreenu. "Design and Development of a 3dB Quadrature Patch Hybrid Coupler." International Journal of Engineering & Technology 7, no. 2.6 (March 11, 2018): 217. http://dx.doi.org/10.14419/ijet.v7i2.6.10570.

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In this paper a -3 dB, 90-degreephase shift RF quadrature patch hybrid coupler is designed to operate at 2.4GHz. Hybrid coupler is a four-port device, that’s accustomed split a signaling with a resultant 90degrees’ section shift between output signals whereas maintaining high isolation between the output ports. The RF quadrature patch hybrid coupler is used in various radio frequency applications including mixers, power combiners, dividers, modulators and amplifiers. The desired hybrid coupler is designed using FR-4 substrate with 1.6mm height in High Frequency Structure Simulation (HFSS) and the same is fabricated and tested. The designed Hybrid coupler is examined in terms of parameters like insertion Loss, coupling factor and return Loss. The simulation and measurement results are compared. Major advantages of the RF quadrature patch hybrid couplers are that they are compatible with integrated circuit technology.

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27

Roblin, Patrick, David E. Root, Jan Verspecht, Youngseo Ko, and Jean Pierre Teyssier. "New Trends for the Nonlinear Measurement and Modeling of High-Power RF Transistors and Amplifiers With Memory Effects." IEEE Transactions on Microwave Theory and Techniques 60, no. 6 (June 2012): 1964–78. http://dx.doi.org/10.1109/tmtt.2012.2193140.

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28

Cheng-Yung Chiang and Huey-Ru Chuang. "A simple and effective load-pull system for RF power transistor large-signal measurements for wireless communication power amplifier design." IEEE Transactions on Instrumentation and Measurement 46, no. 5 (1997): 1150–55. http://dx.doi.org/10.1109/19.676729.

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29

Sen, S., S. Devarakond, and A. Chatterjee. "Phase Distortion to Amplitude Conversion-Based Low-Cost Measurement of AM-AM and AM-PM Effects in RF Power Amplifiers." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 20, no. 9 (September 2012): 1602–14. http://dx.doi.org/10.1109/tvlsi.2011.2160376.

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30

Sankin, Igor, Volodymyr Bondarenko, David C. Sheridan, Michael S. Mazzola, Jeff B. Casady, John Fraley, and Marcelo Schupbach. "SiC Lateral Trench JFET for Harsh-Environment Wireless Systems." Materials Science Forum 600-603 (September 2008): 1087–90. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1087.

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SiC Lateral Trench JFET (LTJFET) technology is demonstrated as a promising candidate for use in high-temperature wireless telemetry systems. 4H-SiC LTJFETs were designed, fabricated and characterized for DC, and small-signal AC and RF performance at different case temperatures. Four-fold drain current reduction was observed at 460°C as compared to RT measurements. The measured threshold voltage shift was less than 2.3 mV/°C from 21°C to 460°C. A simple common source amplifier built using a fabricated device demonstrated stable small-signal AC performance after 100 hrs of operation at 450°C. Small-signal RF measurements were carried out on the packaged devices at different temperatures. GMax above 8 dB was measured over the L-band frequency range at RT. The average degradation of small-signal power gain measured at f=250 MHz did not exceed 0.0125 dB/ °C over the temperature ranging from 21°C to 365°C.

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31

Mohammady, Somayeh, Ronan Farrell, David Malone, and John Dooley. "Performance Investigation of Peak Shrinking and Interpolating the PAPR Reduction Technique for LTE-Advance and 5G Signals." Information 11, no. 1 (December 28, 2019): 20. http://dx.doi.org/10.3390/info11010020.

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Orthogonal frequency division multiplexing (OFDM) has become an indispensable part of waveform generation in wideband digital communication since its first appearance in digital audio broadcasting (DAB) in Europe in 1980s, and it is indeed in use. As has been seen, the OFDM based waveforms work well with time division duplex operation in new radio (NR) systems in 5G systems, supporting delay-sensitive applications, high spectral efficiency, massive multiple input multiple output (MIMO) compatibility, and ever-larger bandwidth signals, which has demonstrated successful commercial implementation for 5G downlinks and uplinks up to 256-QAM modulation schemes. However, the OFDM waveforms suffer from high peak to average power ratio (PAPR), which is not desired by system designers as they want RF power amplifiers (PAs) to operate with high efficiency. Although NR offers some options for maintaining the efficiency and spectral demand, such as cyclic prefix based (CP-OFDM), and discrete Fourier transform spread based (DFT-S-OFDM) schemes, which have limiting effects on PAPR, the PAPR is still as high as 13 dB. This value increases when the bandwidth is increased. Moreover, in LTE-Advance and 5G systems, in order to increase the bandwidth, and data-rate, carrier aggregation technology is used which increases the PAPR the same way that bandwidth increment does; therefore, it is essential to employ PAPR reduction in signal processing stage before passing the signal to PA. In this paper, we investigate the performance of an innovative peak shrinking and interpolation (PSI) technique for reducing peak to average power ratio (PAPR) in orthogonal frequency division multiplexing (OFDM) based signals at waveform generation stage. The main idea behind the PSI technique is to extract high peaks, scale them down, and interpolate them back into the signal. It is shown that PSI technique is a possible candidate for reducing PAPR without compromising on computational complexity, compatible for existing and future telecommunication systems such as 4G, 5G, and beyond. In this paper, the PSI technique is tested with variety of signals in terms of inverse fast Fourier transform (IFFT) length, type of the signal modulation, and applications. Additional work has been carried out to compare the proposed technique with other promising PAPR reduction techniques. This paper further validates the PSI technique through experimental measurement with a power amplifier (PA) test bench and achieves an adjacent channel power ratio (ACPR) of less than –55 dBc. Results showed improvement in output power of PA versus given input power, and furthermore, the error vector magnitude (EVM) of less than 1 % was achieved when comparing of the signal after and before modification by the PSI technique.

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32

Barataud, D., C. Arnaud, B. Thibaud, M. Campovecchio, J. M. Nebus, and J. P. Villotte. "Measurements of time-domain voltage/current waveforms at RF and microwave frequencies based on the use of a vector network analyzer for the characterization of nonlinear devices-application to high-efficiency power amplifiers and frequency-multipliers optimization." IEEE Transactions on Instrumentation and Measurement 47, no. 5 (1998): 1259–64. http://dx.doi.org/10.1109/19.746594.

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33

Jonsson, Rolf, and Staffan Rudner. "Broadband RF SiC MESFET Power Amplifiers." Materials Science Forum 483-485 (May 2005): 857–60. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.857.

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We have designed and characterized preliminary versions of two wideband SiC-based RF power amplifiers using SiC MESFETs from Chalmers University and Lateral Epitaxy SiC MESFETs fabricated at AMDS AB. When optimized transistors are available they will be used in the design of amplifiers for a 100 – 500 MHz multifunction EW system.

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34

Cripps, S. C. "RF power amplifiers for wireless communications." IEEE Microwave Magazine 1, no. 1 (March 2000): 64. http://dx.doi.org/10.1109/mmw.2000.823830.

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Theeuwen, S. J. C. H., and J. H. Qureshi. "LDMOS Technology for RF Power Amplifiers." IEEE Transactions on Microwave Theory and Techniques 60, no. 6 (June 2012): 1755–63. http://dx.doi.org/10.1109/tmtt.2012.2193141.

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36

McCune, Earl. "Fundamentals of Switching RF Power Amplifiers." IEEE Microwave and Wireless Components Letters 25, no. 12 (December 2015): 838–40. http://dx.doi.org/10.1109/lmwc.2015.2496798.

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37

Hajimiri, Ali. "Next-Generation CMOS RF Power Amplifiers." IEEE Microwave Magazine 12, no. 1 (February 2011): 38–45. http://dx.doi.org/10.1109/mmm.2010.939321.

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38

KANG, H. "RF Reconfigurable Predistorter for Power Amplifiers." IEICE Transactions on Electronics E90-C, no. 9 (September 1, 2007): 1664–69. http://dx.doi.org/10.1093/ietele/e90-c.9.1664.

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39

LUCYSZYN, STEPAN. "Power-added efficiency errors with RF power amplifiers." International Journal of Electronics 82, no. 3 (March 1997): 303–12. http://dx.doi.org/10.1080/002072197136110.

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40

Shen, Yilong. "Computation-Based Phase Measurement of RF Power-Amplifier Intermodulation Products." IEEE Transactions on Instrumentation and Measurement 60, no. 8 (August 2011): 2934–41. http://dx.doi.org/10.1109/tim.2011.2121310.

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41

Son, Ki-Yong, Bon-Hoon Koo, Yu-Mi Lee, Hong-Tak Lee, and Song-Cheol Hong. "RF CMOS Power Amplifiers for Mobile Terminals." JSTS:Journal of Semiconductor Technology and Science 9, no. 4 (December 30, 2009): 257–65. http://dx.doi.org/10.5573/jsts.2009.9.4.257.

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42

Saad, Paul, Zahra Asghari, Christian Fager, and Hossein Mashad Nemati. "Driver Topologies for RF Doherty Power Amplifiers." IEEE Microwave and Wireless Components Letters 27, no. 1 (January 2017): 67–69. http://dx.doi.org/10.1109/lmwc.2016.2629977.

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43

Lohtia, Anit, Paul A. Goud, and Colin G. Englefield. "Adaptive digital linearization of RF power amplifiers." Canadian Journal of Electrical and Computer Engineering 20, no. 2 (April 1995): 65–71. http://dx.doi.org/10.1109/cjece.1995.7102026.

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44

Mishra, U. K., Shen Likun, T. E. Kazior, and Yi-Feng Wu. "GaN-Based RF Power Devices and Amplifiers." Proceedings of the IEEE 96, no. 2 (February 2008): 287–305. http://dx.doi.org/10.1109/jproc.2007.911060.

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Ku, H., M. D. McKinley, and J. S. Kenney. "Quantifying memory effects in RF power amplifiers." IEEE Transactions on Microwave Theory and Techniques 50, no. 12 (December 2002): 2843–49. http://dx.doi.org/10.1109/tmtt.2002.805196.

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46

Faulkner, M., M. Johansson, and D. Contos. "Linearisation of power amplifiers using RF feedback." Electronics Letters 31, no. 23 (November 9, 1995): 2023–24. http://dx.doi.org/10.1049/el:19951402.

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47

Cappello, Tommaso, Zoya Popovic, Kevin Morris, and Angelo Cappello. "Gaussian Pulse Characterization of RF Power Amplifiers." IEEE Microwave and Wireless Components Letters 31, no. 4 (April 2021): 417–20. http://dx.doi.org/10.1109/lmwc.2021.3054049.

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Landin, P. N., W. Van Moer, M. Isaksson, and P. Handel. "Peak-Power Controlled Digital Predistorters for RF Power Amplifiers." IEEE Transactions on Microwave Theory and Techniques 60, no. 11 (November 2012): 3582–90. http://dx.doi.org/10.1109/tmtt.2012.2213830.

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49

Lixin, Zhao, Jin Zhi, and Liu Xinyu. "Large signal RF power transmission characterization of InGaP HBT for RF power amplifiers." Journal of Semiconductors 31, no. 1 (January 2010): 014001. http://dx.doi.org/10.1088/1674-4926/31/1/014001.

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50

Shi, B., and L. Sundström. "Chip for linearisation of RF power amplifiers using power feedback." Electronics Letters 34, no. 22 (1998): 2117. http://dx.doi.org/10.1049/el:19981460.

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