Relevant bibliographies by topics / MESFET device

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'MESFET device'

Author: Grafiati
Published: 3 June 2025
Last updated: 31 July 2025

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Journal articles on the topic "MESFET device"

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Kang, In Ho, Wook Bahng, Sang Cheol Kim, Sung Jae Joo, and Nam Kyun Kim. "Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations." Materials Science Forum 556-557 (September 2007): 823–26. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.823.

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A double delta-doped channel 4H-SiC MESFET is proposed to kick out degradation of the DC and RF performances caused by the surface traps, by forming a quantum-well-like potential well and separating an effective channel from the surface. To obtain an optimum device structure, the DC and RF performances of double delta-doped channel MESFETs having various delta-doping concentrations but the same pinch-off voltage with that of conventional MESFET were also investigated. The SilvacoTM simulation results show that the double delta-doped channel MESFET achieved more improvement of the drain current
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Banu, Viorel, Josep Montserrat, Mihaela Alexandru, Xavier Jordá, José Millan, and Philippe Godignon. "Monolithic Integration of Power MESFET for High Temperature SiC Integrated Circuits." Materials Science Forum 778-780 (February 2014): 891–94. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.891.

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This work provides experimental result on fabricated 4H-SiC lateral power MESFET intended to be used in further development of high temperature integrated circuits for power application. The power SiC MESFET device was developed using a planar technology on silicon carbide and P implant isolation technique. Its destination to monolithic integration demands a lateral layout connection topology. The use of quite high doped N type epitaxial layer (1017cm-3) typical for the integrated circuits raises difficulties to keep the leakage current of the Schottky gate in a decent range. Therefore, a hexa
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Tournier, Dominique, Miquel Vellvehi, Phillippe Godignon, Xavier Jordá, and José Millan. "Double Gate 180V-128mA/mm SiC-MESFET for Power Switch Applications." Materials Science Forum 527-529 (October 2006): 1243–46. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1243.

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The potential of SiC MESFETs has been demonstrated for high frequency applications on several circuits in the 1-5 GHz frequency range. Although MESFET structures are conventionally used for RF applications, in this paper we report a low voltage (180V) power switch and its current limiting application based on a double gate MESFET structure, showing enhanced forward and blocking capabilities. The reported devices utilize a thin highly doped p-type layer implanted at high energy as buffer layer. Various layouts have been fabricated, varying the gate length; with either a single gate (p-buried la
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SHUR, M. S., T. A. FJELDLY, T. YTTERDAL, and K. LEE. "UNIFIED GaAs MESFET MODEL FOR CIRCUIT SIMULATIONS." International Journal of High Speed Electronics and Systems 03, no. 02 (1992): 201–33. http://dx.doi.org/10.1142/s0129156492000084.

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We describe a new, unified model for MEtal Semiconductor Field Effect Transistors (MESFETs) which covers all ranges of operation, including the subthreshold regime. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics are described by continuous, analytical expressions with relatively few, physically based parameters. The model includes effects such as velocity saturation, parasitic series resistances, the dependence of the threshold voltage on drain bias, finite output conductance in saturation, and temperature dependence of the device parameters. We also describe a paramet
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Alexandru, Mihaela, Viorel Banu, Matthieu Florentin, Xavier Jordá, Miguel Vellvehi, and Dominique Tournier. "High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates." Materials Science Forum 778-780 (February 2014): 1130–34. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1130.

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Due to our demonstrated stable Tungsten-Schottky barrier at elevated temperatures, and also thanks to our technological process maturity regarding SiC-Schottky contact fabrication, we have implemented the digital logic gates library adopting a normally-on MESFET topology. In this paper we present new experimental results showing the thermal behavior up to 300oC of 4H-SiC logic gates library, monolithically integrating normally-on MESFETs and epitaxial resistors. The implemented SiC devices are based on important CMOS features and are specially designed for large ICs device integration density.
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Jaya, T., and V. Kannan. "ON/OFF Light Effect on the Buried Gate MESFET." Advanced Materials Research 268-270 (July 2011): 143–47. http://dx.doi.org/10.4028/www.scientific.net/amr.268-270.143.

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An analytical model for the time dependent characteristic of ion implanted buried gate MESFET have been obtained by solving continuity equation with variation of light , turning ON and OFF in the active layer of buried gate through the optical fiber. This paper provides new insight into the cause of channel conductance variation in an ion implanted buried gate MESFET with front side illumination. At time‘t’ is equal to zero, the light through the optical fiber is turning ‘ON’ and ‘OFF’ has been considered. The channel conductance of the buried gate MESFET evaluated with front side illumination
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Jia, Hujun, Yibo Tong, Tao Li, et al. "An Improved 4H-SiC MESFET with a Partially Low Doped Channel." Micromachines 10, no. 9 (2019): 555. http://dx.doi.org/10.3390/mi10090555.

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An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of ADS and ISE-TCAD software. This structure has a partially low doped channel (PLDC) under the gate, which increases the PAE of the device by decreasing the absolute value of the threshold voltage (Vt), gate-source capacitance (Cgs) and saturation current (Id). The simulated results show that with the increase of H, the PAE of the device increases and
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Jia, Hujun, Yuan Liang, Tao Li, et al. "Improved DRUS 4H-SiC MESFET with High Power Added Efficiency." Micromachines 11, no. 1 (2019): 35. http://dx.doi.org/10.3390/mi11010035.

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A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper. The structure (LDUS-MESFET) introduced layered doping under the lower gate of the channel, while optimizing the thickness of the undoped region. Compared with the double-recessed 4H-SiC MESFET with partly undoped space region (DRUS-MESFET), the power added efficiency of the LDUS-MESFET is increased by 85.8%, and the saturation current is increased by 27.4%. Although the breakdown voltage of the device has
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Zhu, Shunwei, Hujun Jia, Xingyu Wang, et al. "Improved MRD 4H-SiC MESFET with High Power Added Efficiency." Micromachines 10, no. 7 (2019): 479. http://dx.doi.org/10.3390/mi10070479.

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An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology computer aided design (TCAD) Sentaurus software in this paper. Based on multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (MRD 4H-SiC MESFET), the recessed area of MRD MESFET on both sides of the gate is optimized, the direct current (DC), radio frequency (RF) parameters and efficiency of the device i
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Nilsson, Per Åke, Niklas Rorsman, Mattias Südow, Kristoffer Andersson, Hans Hjelmgren, and Herbert Zirath. "SiC MESFET with a Double Gate Recess." Materials Science Forum 527-529 (October 2006): 1227–30. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1227.

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In order to increase the output power and drain efficiency, MESFETs in SiC have been made with a double gate recess technique. Typical device characteristics of the MESFETs are drain currents of 380mA/mm, breakdown voltages of 80V and ft/fmax of 10/25 GHz respectively. These transistors exhibit power densities of 3W/mm@3GHz in class AB operation and drain efficiencies of 60%. Packaged devices with 3 mm gate periphery of this type, with via-hole grounding, gave power densities of 1.2 W/mm@6GHz at 50 V drain bias.
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Dissertations / Theses on the topic "MESFET device"

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Lau, Mark C. "Small Signal Equivalent Circuit Extraction From A Gallium Arsenide MESFET Device." Thesis, Virginia Tech, 1997. http://hdl.handle.net/10919/36952.

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The development of microwave Gallium Arsenide Metal Semiconductor Field Effect Transistor (MESFET) devices has enabled the miniaturization of pagers, cellular phones, and other electronic devices. With these MESFET devices comes the need to model them. This thesis extracts a small signal equivalent circuit model from a Gallium Arsenide MESFET device. The approach taken in this thesis is to use measured S- parameters to extract a small signal equivalent circuit model by optimization. Small signal models and S-parameters are explained. The Simplex Method is used to optimize the smal
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Sekar, Saalini Valli. "Nonlinear device characterization and second harmonic impedance tuning to achieve peak performance for a SiC power MESFET device at 2GHz." [Ames, Iowa : Iowa State University], 2008.

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Bertilsson, Kent. "Simulation and Optimization of SiC Field Effect Transistors." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-81.

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<p>Silicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. The rapid miniaturization of commercial devices demands better physical models than the drift-diffusion and hydrodynamic models most commonly used at present.</p><p>The Monte Carlo method is the most accurate physical methods available and has been used in this work to study t
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Ward, Allan III. "Residual Stress Effects on Power Slump and Wafer Breakage in GaAs MESFETs." Diss., Virginia Tech, 1996. http://hdl.handle.net/10919/30503.

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The objectives of this investigation are to develop a precise, non-destructive single crystal stress measurement technique, develop a model to explain the phenomenon known as 3power slump2, and investigate the role of device processing on wafer breakage. All three objectives were successfully met. The single crystal stress technique uses a least squares analysis of X-ray diffraction data to calculate the full stress tensor. In this way, precise non-destructive stress measurements can be made with known error bars. Rocking curve analysis, stress gradient corrections, and a data reliability tech
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Xia, Zhanbo. "Materials and Device Engineering for High Performance β-Ga2O3-based Electronics". The Ohio State University, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1587688595358557.

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Driche, Khaled. "Diamond unipolar devices : towards impact ionization coefficients extraction." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT115/document.

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97% des articles publiés sur les études climatiques racontent que le réchauffement climatique est entièrement causé par les activités humaines. Les gaz émis lors de la production d'énergie électrique ainsi que d'autres gaz rejetés par les voitures ont un réel impact sur l'atmosphère. Une solution consiste à mettre au point des composants présentant des pertes de conduction plus faibles et des caractéristiques de claquage plus élevées qui pourraient être utilisés dans des centrales nucléaires, des cellules de commutation à haute puissance, des voitures hybrides (électriques), etc.De nos jours,
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Wong, J. N. H. "Novel techniques for improving the performance of MESFET power amplifiers." Thesis, University of Surrey, 2003. http://epubs.surrey.ac.uk/843448/.

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This thesis describes the research activities that have been investigated for improving the 3rd order intermodulation distortion products (IM3) and power added efficiency (PAE) and bandwidth performance of microwave GaAs MESFET power amplifiers. Two novel circuit techniques, one for improving the 3dB bandwidth performance and the other for improving the IM3 and PAE performance, were proposed and verified through simulation and practical measurements. The technique of including lumped elements matching networks within the package encapsulation (Close-to-Chip lumped element matching) of a 2GHz M
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McDowall, David Stewart. "Concurrent mixed mode modelling of active strip antennas." Thesis, Queen's University Belfast, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239014.

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Barton, T. M. "Characterisation of the physical behaviour of GaAs MESFETs." Thesis, University of Leeds, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.383294.

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Davies, Antony. "Characterisation and parameter extraction techniques for GaAs MESFET devices." Thesis, University of Kent, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.241552.

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Books on the topic "MESFET device"

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Amiri, Iraj Sadegh, Hossein Mohammadi, and Mahdiar Hosseinghadiry. Device Physics, Modeling, Technology, and Analysis for Silicon MESFET. Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-04513-5.

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Simons, Rainee. Optically controlled GaAs dual-gate MESFET and permeable base transistors. National Aeronautics and Space Administration, 1986.

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Simons, Rainee. Optoelectric gain control of a microwave single stage GaAs MESFET amplifier. National Aeronautics and Space Administration, 1988.

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Innocenti, Barbara, ed. La fortuna del 'Secolo d'Oro'. Firenze University Press, 2018. http://dx.doi.org/10.36253/978-88-6453-743-6.

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Il Seicento è stato per l’Europa il “secolo del teatro”, per la quantità e qualità delle opere drammatiche e per la ricchezza delle invenzioni sceniche. Studiarlo, in particolare in area francese e spagnola alla luce della compenetrazione tra Classicismo, Manierismo e Barocco, significa discutere e approfondire alcuni nodi tematici essenziali non solo alla conoscenza di un’epoca storico-letteraria ma alla stessa modernità. Questo volume, curato da Barbara Innocenti (cui si deve anche la trascrizione di un originale documento sulla morte di Luigi XIV rinvenuto negli archivi pistoiesi), grazie a
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Amiri, Iraj Sadegh, Hossein Mohammadi, and Mahdiar Hosseinghadiry. Device Physics, Modeling, Technology, and Analysis for Silicon MESFET. Springer, 2018.

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Gupta, R. S., Subhasis Haldar, Mridula Gupta, and Manoj Saxena. MOSFET/MESFET/HEMT Device Physics and Modeling for VLSI Engineering. John Wiley & Sons Inc, 2007.

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Fundamentals of III-V devices: HBTs, MESFETs, and HFETs/HEMTs. Wiley, 1999.

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Liu, William. Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs. Wiley & Sons, Incorporated, John, 2008.

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Liu, William. Fundamentals of III-V Devices, Solutions Manual: HBTs, MESFETs, and HFETs/HEMTs. Wiley & Sons, Incorporated, John, 1999.

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Agarwal, Anil, Neil Borley, and Greg McLatchie, eds. Oxford Handbook of Operative Surgery. Oxford University Press, 2017. http://dx.doi.org/10.1093/med/9780199608911.001.0001.

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The Oxford Handbook of Operative Surgery (OHOS) is for surgical trainees in their early years of training. Medical students and nurses will also find it useful. It follows the Intercollegiate Surgical Curriculum Programme syllabus. The format is indications, anatomy, procedure, post-operative complications, tips and tricks. Numerous illustrations are used throughout the book. The general surgery chapter covers preoperative assessment, consent, antibiotics prophylaxis, and venous thromboembolism, WHO checklist, energy devices used in operations, duty of candour, sutures, meshes, hernia repair.
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Book chapters on the topic "MESFET device"

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Snowden, Christopher M. "MESFET Modelling." In Compound Semiconductor Device Modelling. Springer London, 1993. http://dx.doi.org/10.1007/978-1-4471-2048-3_2.

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Delagebeaudeuf, D., and P. Briere. "MESFET operation principles and device modelling." In The Microwave Engineering Handbook. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-4552-5_14.

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Morgan, D. V., and J. Wood. "Gate Metallisation Systems for High Reliability GaAs MESFET Transistors." In Semiconductor Device Reliability. Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-2482-6_11.

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Amiri, Iraj Sadegh, Hossein Mohammadi, and Mahdiar Hosseinghadiry. "Modeling of Classical SOI MESFET." In Device Physics, Modeling, Technology, and Analysis for Silicon MESFET. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-04513-5_3.

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Turner, James, and Rodney Conlon. "An Historical Perspective of GaAs Mesfet Reliability Work at Plessey." In Semiconductor Device Reliability. Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-2482-6_2.

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Amiri, Iraj Sadegh, Hossein Mohammadi, and Mahdiar Hosseinghadiry. "Design and Modeling of Triple-Material Gate SOI MESFET." In Device Physics, Modeling, Technology, and Analysis for Silicon MESFET. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-04513-5_4.

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Amiri, Iraj Sadegh, Hossein Mohammadi, and Mahdiar Hosseinghadiry. "Analytical Investigation of Subthreshold Performance of SOI MESFET Devices." In Device Physics, Modeling, Technology, and Analysis for Silicon MESFET. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-04513-5_6.

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Amiri, Iraj Sadegh, Hossein Mohammadi, and Mahdiar Hosseinghadiry. "Invention and Evaluation of Transistors and Integrated Circuits." In Device Physics, Modeling, Technology, and Analysis for Silicon MESFET. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-04513-5_1.

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Amiri, Iraj Sadegh, Hossein Mohammadi, and Mahdiar Hosseinghadiry. "General Overview of the Basic Structure and Operation of a Typical Silicon on Insulator Metal–Semiconductor Field Effect Transistor (SOI-MESFET)." In Device Physics, Modeling, Technology, and Analysis for Silicon MESFET. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-04513-5_2.

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Amiri, Iraj Sadegh, Hossein Mohammadi, and Mahdiar Hosseinghadiry. "Three-Dimensional Analytical Model of the Non-Classical Three-Gate SOI MESFET." In Device Physics, Modeling, Technology, and Analysis for Silicon MESFET. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-04513-5_5.

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Conference papers on the topic "MESFET device"

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Chang, Shoou-Jinn, Chieh-Chih Huang, Jia-Ching Lin, Sheng-Po Chang, Yi-Cheng Cheng, and Wen-Jen Lin. "GaN MESFET growth on vicinal sapphire by MOVPE." In International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422370.

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Asai, Kazuyoshi, and Tadao Ishibashi. "GaAs MESFET and HBT Technology in Picosecond Electronics." In Picosecond Electronics and Optoelectronics. Optica Publishing Group, 1989. http://dx.doi.org/10.1364/peo.1989.tt139.

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Ultra-high-speed signal processing with a bit rate of over 10 Gbit/s will soon be available in GaAs MES-FET and HBT integrated circuits. Such remarkable progress in the device performances is based on the scaling down for MESFET and near ballistic transportation for HBT. Propagation delay times of inverters have been reduced to 6.7 ps/gate and 1.9 ps/gate, and maximum toggle frequencies of flip-flop circuits have reached 31.4 GHz and 22.15 GHz, respectively. Wide-band amplifiers with a band width of about 10 GHz have also been obtained. This paper reviews recent progress in the speed performan
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Senthil Kumar, K., S. Sarkar, S. K. Singh, and N. Sharma. "Extraction of small signal model of MESFET as control device." In IET-UK International Conference on Information and Communication Technology in Electrical Sciences (ICTES 2007). IEE, 2007. http://dx.doi.org/10.1049/ic:20070738.

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Zhou, J., A. M. Kriman, and D. K. Ferry. "Transient Simulation of Ultra-Small GaAs MESFET Using Quantum Moment Equations." In Picosecond Electronics and Optoelectronics. Optica Publishing Group, 1991. http://dx.doi.org/10.1364/peo.1991.we1.

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Since the advent of the integrated circuits in the late 1950’s, the number of devices contained on a single chip has approximately doubled every three years and this process has caused semiconductor devices to be made smaller and smaller. However, little is understood about the physical limitations that will determine whether or not these devices are practical. These questions have opened a new field for semiconductor research and technology in which a great opportunity is provided to study many new physical phenomena, some of which have been described in [1-4], and exploring a new generation
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Rossi, M. C., P. Calvani, G. Conte, et al. "RF power performance of submicron MESFET on hydrogen terminated polycrystalline diamond." In 2009 International Semiconductor Device Research Symposium (ISDRS 2009). IEEE, 2009. http://dx.doi.org/10.1109/isdrs.2009.5378251.

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Zhang, Chen, Ryan Dowdy, and Xiuling Li. "High voltage gain MESFET amplifier using self-aligned MOCVD grown planar GaAs nanowires." In 2013 71st Annual Device Research Conference (DRC). IEEE, 2013. http://dx.doi.org/10.1109/drc.2013.6633794.

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Alexandru, M., V. Banu, P. Godignon, M. Vellvehi, and J. Millan. "4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits." In ESSDERC 2013 - 43rd European Solid State Device Research Conference. IEEE, 2013. http://dx.doi.org/10.1109/essderc.2013.6818829.

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Shimbori, Atsushi, and Alex Q. Huang. "Design and fabrication of low pinch-off voltage 700V lateral 4H-SiC MESFET with thin RESURF layer." In 2021 Device Research Conference (DRC). IEEE, 2021. http://dx.doi.org/10.1109/drc52342.2021.9467247.

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Kim, Q., and S. Kayali. "Infrared Emission Spectroscopy as a Reliability Tool." In ISTFA 1999. ASM International, 1999. http://dx.doi.org/10.31399/asm.cp.istfa1999p0077.

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Abstract In this paper, we report on a non-destructive technique, based on IR emission spectroscopy, for measuring the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). A submicron-size He-Ne laser provides the local excitation of the gate channel and the emitted photons are collected by a spectrophotometer. Given the state of our experimental test system, we estimate a spectral resolution of approximately 0.1 Angstroms and a spatial resolution of approximately 0.9 μm, which is up to 100 times finer spatial resolution than can be obta
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Ko-Ming Shih, D. P. Klemer, and J. J. Liou. "Prediction of GaAs MESFET process-induced variations using a device-physics-based analytical model." In Proceedings of SOUTHCON '94. IEEE, 1994. http://dx.doi.org/10.1109/southc.1994.498109.

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Reports on the topic "MESFET device"

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Figueiredo, Ana Beatriz, Arturo Daniel Alarcon Rodriguez, Bruno César Araújo, et al. Retomada nos municípios: Por onde começar. Inter-American Development Bank, 2021. http://dx.doi.org/10.18235/0003234.

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Ao assumirem as prefeituras em 2021, os novos gestores e os gestores reeleitos se depararam com uma complexa realidade socioeconômica em virtude da pandemia, com desemprego e urgências sanitárias que vão emergindo a partir de uma segunda curva pandêmica. Podemos resumir que, neste quadro apreensivo, os desafios destes gestores, especialmente aqueles de cidades pequenas e médias são priorizar e optar por ações concretas que possam ser implementadas. Todas as necessidades são importantes, no há dúvidas. Entretanto, o estabelecimento de foco em alguns elementos da gestão pública pode resultar em
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Agrela, Fabiano de Abreu. TEA: O cérebro e a infância de uma pessoa com autismo. CPAH REDAÇÃO, 2023. http://dx.doi.org/10.56238/cpahciencia-011.

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O TEA - Transtornos do Espectro Autista - ainda é um campo onde há muito a ser descoberto, apesar dos grandes e significativos avanços da ciência na compreensão da condição, existem detalhes que não são totalmente entendidos, um dos principais é a sua evolução durante a vida adulta. Não há apenas uma causa para o desenvolvimento de autismo, ele é multifatorial e pode sofrer influência de inúmeras variáveis, como fatores genéticos, condições neurológicas e mentais pré-existentes, fatores ambientais, entre vários outros, no entanto, entende-se que essa vasta gama de influências converge para pre
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Palhares Neto, Luiz, Leilane Gomes, José Marangon, Genilton Santos, and Cecílio Caldeira Júnior. Protocolo de micropropagação de Cattleya milleri, espécie endêmica do quadrilátero ferrífero criticamente ameaçada de extinção. ITV, 2022. http://dx.doi.org/10.29223/prod.tec.itv.ds.2022.12.palharesneto.

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A espécie Cattleya milleri é uma orquídea endêmica dos Campos Rupestres Ferruginosos do Quadrilátero Ferrífero em Minas Gerais. Esta espécie é atualmente classificada como criticamente ameaçada de extinção sobretudo devido a restrição geográfica de sua ocorrência, degradação de seu habitat natural e reduzidas populações naturais. O estabelecimento de métodos de propagação e cultivo que possibilitem a rápida multiplicação desta espécie é etapa crucial para a conservação ex situ e também para o enriquecimento em áreas naturais e a manutenção da espécie em seu habitat. A micropropagação ou a prop
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