Log in

Relevant bibliographies by topics / MESFET device / Dissertations / Theses

To see the other types of publications on this topic, follow the link: MESFET device.

Dissertations / Theses on the topic 'MESFET device'

Author: Grafiati

Published: 3 June 2025

Last updated: 31 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 26 dissertations / theses for your research on the topic 'MESFET device.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse dissertations / theses on a wide variety of disciplines and organise your bibliography correctly.

1

Lau, Mark C. "Small Signal Equivalent Circuit Extraction From A Gallium Arsenide MESFET Device." Thesis, Virginia Tech, 1997. http://hdl.handle.net/10919/36952.

Full text

Abstract:

The development of microwave Gallium Arsenide Metal Semiconductor Field Effect Transistor (MESFET) devices has enabled the miniaturization of pagers, cellular phones, and other electronic devices. With these MESFET devices comes the need to model them. This thesis extracts a small signal equivalent circuit model from a Gallium Arsenide MESFET device. The approach taken in this thesis is to use measured S- parameters to extract a small signal equivalent circuit model by optimization. Small signal models and S-parameters are explained. The Simplex Method is used to optimize the smal

APA, Harvard, Vancouver, ISO, and other styles

2

Sekar, Saalini Valli. "Nonlinear device characterization and second harmonic impedance tuning to achieve peak performance for a SiC power MESFET device at 2GHz." [Ames, Iowa : Iowa State University], 2008.

Find full text

APA, Harvard, Vancouver, ISO, and other styles

3

Bertilsson, Kent. "Simulation and Optimization of SiC Field Effect Transistors." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-81.

Full text

Abstract:

<p>Silicon Carbide (SiC) is a wide band-gap semiconductor material with excel-lent material properties for high frequency, high power and high temperature elec-tronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. The rapid miniaturization of commercial devices demands better physical models than the drift-diffusion and hydrodynamic models most commonly used at present.</p><p>The Monte Carlo method is the most accurate physical methods available and has been used in this work to study t

APA, Harvard, Vancouver, ISO, and other styles

4

Ward, Allan III. "Residual Stress Effects on Power Slump and Wafer Breakage in GaAs MESFETs." Diss., Virginia Tech, 1996. http://hdl.handle.net/10919/30503.

Full text

Abstract:

The objectives of this investigation are to develop a precise, non-destructive single crystal stress measurement technique, develop a model to explain the phenomenon known as 3power slump2, and investigate the role of device processing on wafer breakage. All three objectives were successfully met. The single crystal stress technique uses a least squares analysis of X-ray diffraction data to calculate the full stress tensor. In this way, precise non-destructive stress measurements can be made with known error bars. Rocking curve analysis, stress gradient corrections, and a data reliability tech

APA, Harvard, Vancouver, ISO, and other styles

5

Xia, Zhanbo. "Materials and Device Engineering for High Performance β-Ga2O3-based Electronics". The Ohio State University, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1587688595358557.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Driche, Khaled. "Diamond unipolar devices : towards impact ionization coefficients extraction." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT115/document.

Full text

Abstract:

97% des articles publiés sur les études climatiques racontent que le réchauffement climatique est entièrement causé par les activités humaines. Les gaz émis lors de la production d'énergie électrique ainsi que d'autres gaz rejetés par les voitures ont un réel impact sur l'atmosphère. Une solution consiste à mettre au point des composants présentant des pertes de conduction plus faibles et des caractéristiques de claquage plus élevées qui pourraient être utilisés dans des centrales nucléaires, des cellules de commutation à haute puissance, des voitures hybrides (électriques), etc.De nos jours,

APA, Harvard, Vancouver, ISO, and other styles

7

Wong, J. N. H. "Novel techniques for improving the performance of MESFET power amplifiers." Thesis, University of Surrey, 2003. http://epubs.surrey.ac.uk/843448/.

Full text

Abstract:

This thesis describes the research activities that have been investigated for improving the 3rd order intermodulation distortion products (IM3) and power added efficiency (PAE) and bandwidth performance of microwave GaAs MESFET power amplifiers. Two novel circuit techniques, one for improving the 3dB bandwidth performance and the other for improving the IM3 and PAE performance, were proposed and verified through simulation and practical measurements. The technique of including lumped elements matching networks within the package encapsulation (Close-to-Chip lumped element matching) of a 2GHz M

APA, Harvard, Vancouver, ISO, and other styles

8

McDowall, David Stewart. "Concurrent mixed mode modelling of active strip antennas." Thesis, Queen's University Belfast, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.239014.

Full text

APA, Harvard, Vancouver, ISO, and other styles

9

Barton, T. M. "Characterisation of the physical behaviour of GaAs MESFETs." Thesis, University of Leeds, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.383294.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Davies, Antony. "Characterisation and parameter extraction techniques for GaAs MESFET devices." Thesis, University of Kent, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.241552.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Weber, Michael Thomas. "Analysis of Zincblende-Phase GaN, Cubic-Phase SiC, and GaAs MESFETs Including a Full-Band Monte Carlo Simulator." Diss., Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7500.

Full text

Abstract:

The objective of this research has been the study of device properties for emerging wide-bandgap cubic-phase semiconductors. Though the wide-bandgap semiconductors have great potential as high-power microwave devices, many gaps remain in the knowledge about their properties. The simulations in this work are designed to give insight into the performance of microwave high-power devices constructed from the materials in question. The simulation are performed using a Monte Carlo simulator which was designed from the ground up to include accurate, numerical band structures derived from an empirical

APA, Harvard, Vancouver, ISO, and other styles

12

Chun, Carl S. P. (Shun Ping). "Investigation of GaAs MESFET amplifier topologies for optoelectronic receiver applications." Thesis, Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/14813.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Darling, Robert Bruce. "A theory for optically-gated gallium-arsenide MESFETS." Diss., Georgia Institute of Technology, 1985. http://hdl.handle.net/1853/15668.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Blight, S. R. "Surface and bulk traps in materials and devices for GaAs integrated circuits." Thesis, Cardiff University, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.383250.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Chalapathi, K. M. "A study of the effects of radiation damage in GaAs MESFETs on device performance." Thesis, University of Leeds, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.355937.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Elzwawi, Salim Ahmed Ali. "Cathodic Arc Zinc Oxide for Active Electronic Devices." Thesis, University of Canterbury. Electrical and Computer Engineering, 2015. http://hdl.handle.net/10092/10852.

Full text

Abstract:

The filtered cathodic vacuum arc (FCVA) technique is a well established deposition method for wear resistant mechanical coatings. More recently, this method has attracted attention for growing ZnO based transparent conducting films. However, the potential of FCVA deposition to prepare ZnO layers for electronic devices is largely unexplored. This thesis addresses the use of FCVA deposition for the fabrication of active ZnO based electronic devices. The structural, electrical and optical characteristics of unintentionally doped ZnO films grown on different sapphire substrates were systematically

APA, Harvard, Vancouver, ISO, and other styles

17

Lai, Hong Cheng. "Coupling finite element meshes for modelling movement in electromagnetic devices." Thesis, University of Bath, 1994. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359722.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Mogniotte, Jean-François. "Conception d'un circuit intégré en SiC appliqué aux convertisseur de moyenne puissance." Thesis, Lyon, INSA, 2014. http://www.theses.fr/2014ISAL0004/document.

Full text

Abstract:

L’émergence d’interrupteurs de puissance en SiC permet d’envisager des convertisseurs de puissance capables de fonctionner au sein des environnements sévères tels que la haute tension (> 10 kV ) et la haute température (> 300 °C). Aucune solution de commande spécifique à ces environnements n’existe pour le moment. Le développement de fonctions élémentaires en SiC (comparateur, oscillateur) est une étape préliminaire à la réalisation d’un premier démonstrateur. Plusieurs laboratoires ont développé des fonctions basées sur des transistors bipolaires, MOSFETs ou JFETs. Cependant les recherc

APA, Harvard, Vancouver, ISO, and other styles

19

Lu, Jiaqing. "Numerical Modeling and Computation of Radio Frequency Devices." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1543457620064355.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

"MESFET Optimization and Innovative Design for High Current Device Applications." Master's thesis, 2011. http://hdl.handle.net/2286/R.I.9233.

Full text

Abstract:

abstract: There will always be a need for high current/voltage transistors. A transistor that has the ability to be both or either of these things is the silicon metal-silicon field effect transistor (MESFET). An additional perk that silicon MESFET transistors have is the ability to be integrated into the standard silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) process flow. This makes a silicon MESFET transistor a very valuable device for use in any standard CMOS circuit that may usually need a separate integrated circuit (IC) in order to switch power on or from a hi

APA, Harvard, Vancouver, ISO, and other styles

21

Hong, Chia Nan, and 洪嘉男. "A Study on Physical Models for GaAs MESFET Device Simulation." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/96436440129461783084.

Full text

Abstract:

碩士<br>國立中山大學<br>電機工程研究所<br>84<br>The GaAs material has two valley property. In our studying, we use the two-valley drift diffusion model instead of conventional single-valley model. Considering calculative time, we build another model, equivalent singal-valley model, that is based on the two-valley model. Besides, we will get an accurate model that mobility is dependent of ▽Φ. Comparing our model with conventional model and experimental value, our new models are helpful the device simulatio

APA, Harvard, Vancouver, ISO, and other styles

22

FANG, ZHONG-XIN, and 方中信. "Two-dimensional analysis of microwave and millimeter-wave active device: GaAs MESFET." Thesis, 1988. http://ndltd.ncl.edu.tw/handle/06804157429015910205.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Qin, Shan-Ping, and 秦善平. "A new methodology for 2-D semiconductor device simulation and its application in analyzing deep submicrometer MESFET''s." Thesis, 1992. http://ndltd.ncl.edu.tw/handle/81030783598953325291.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

江德光. "The modeling of the short channel devices in deep-submicrometer range:including GaAs MESFET''s, Si-SOI MESFET''s, SOI MOSFET''s and double-gate SOI MOSFET''s." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/83073047844185964096.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Fang, Xiang, and 方向. "Fabrication of Nano Metal Meshes by Nanoimprint Lithography for Organic Electronics Device Applications." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/99660941989280619904.

Full text

Abstract:

碩士<br>國立臺灣大學<br>光電工程學研究所<br>103<br>Owing to the rapid development of flexible electronic devices in recent years, the solution-processed organic transistors have shown their great potential in many applications by employing low-cost, roll-to-roll, and large-area mass production. This thesis mainly focuses on the performance improvement on space-charge-limited organic transistor (SCLT), jointly developed by Prof. Zan’s, Prof. Meng’s and our groups. Though SCLT usually has high output current, high ON/OFF current ratio and relatively low operational voltage, its performance is still unstable due

APA, Harvard, Vancouver, ISO, and other styles

26

Huang, Sih-Hao, and 黃思皓. "Analysis and Simulation of Semiconductor Devices by Triangular and Trapezoidal Meshes in Cylindrical Coordinate." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/20276999478700542139.

Full text

Abstract:

碩士<br>國立中央大學<br>電機工程學系<br>101<br>The goal of the thesis is to develop the triangular mesh in polar coordinate system, verifying it has the similar characteristic as trapezoidal mesh. There are two equivalent circuit models of triangular mesh, one is acute, and the other is obtuse. According to the result of diode simulation, the property of triangular mesh is close to trapezoidal one, making sure that the mesh is accurate enough to simulate the diode. In the end, we develop a new mesh consists of trapezoidal and triangular meshes, improving the problem that the device can’t be simulated from o

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!