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Relevant bibliographies by topics / Mesfet gaas

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Academic literature on the topic 'Mesfet gaas'

Author: Grafiati

Published: 4 June 2021

Last updated: 11 February 2022

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Journal articles on the topic "Mesfet gaas"

1

Franklin, A. J., E. A. Amerasekera, and D. S. Campbell. "A Comparison Between GaAs Mesfet and Si NMOS ESD Behaviour." Active and Passive Electronic Components 12, no. 3 (1987): 201–11. http://dx.doi.org/10.1155/1987/96107.

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Work is in hand at Loughborough University to investigate and compare the ESD sensitivity of GaAs D-MESFETs and unprotected enhancement mode NMOS structures.The work to date has shown that GaAs MESFET structures can be severely degraded with ESD pulses above 600V as compared with 200V for Si NMOS. It has also been shown that both GaAs and NMOS structures are polarity sensitive.The behaviour of the Schottky barrier is used to explain the polarity behaviour in GaAs MESFETs. The breakdown of the oxide in the NMOS devices can be explained by impact ionisation.

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OTSUJI, TAIICHI, KOICHI MURATA, KOICHI NARAHARA, KIMIKAZU SANO, EIICHI SANO, and KIMIYOSHI YAMASAKI. "20-40-Gbit/s-CLASS GaAs MESFET DIGITAL ICs FOR FUTURE OPTICAL FIBER COMMUNICATIONS SYSTEMS." International Journal of High Speed Electronics and Systems 09, no. 02 (June 1998): 399–435. http://dx.doi.org/10.1142/s0129156498000191.

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This paper describes recent advances in high-speed digital IC design technologies based on GaAs MESFETs for future high-speed optical communications systems. We devised new types of a data selector and flip-flops, which are key elements in performing high-speed digital functions (signal multiplexing, decision, demultiplexing, and frequency conversion) in front-end transmitter/receiver systems. Incorporating these circuit design technologies with state-of-the-art 0.12 μm gate-length GaAs MESFET process, we developed a DC-to-44-Gbit/s 2:1 data multiplexer IC, a DC-to 22-Gbit/s static decision IC, and a 20-to-40-Gbit/s dynamic decision IC. The fabricated ICs demonstrated record speed performances for GaAs MESFETs. Although further operating speed margin is still required, the GaAs MESFET is a potential candidate for 20- to 40-Gbit/s class applications.

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SHUR, M. S., T. A. FJELDLY, T. YTTERDAL, and K. LEE. "UNIFIED GaAs MESFET MODEL FOR CIRCUIT SIMULATIONS." International Journal of High Speed Electronics and Systems 03, no. 02 (June 1992): 201–33. http://dx.doi.org/10.1142/s0129156492000084.

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We describe a new, unified model for MEtal Semiconductor Field Effect Transistors (MESFETs) which covers all ranges of operation, including the subthreshold regime. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics are described by continuous, analytical expressions with relatively few, physically based parameters. The model includes effects such as velocity saturation, parasitic series resistances, the dependence of the threshold voltage on drain bias, finite output conductance in saturation, and temperature dependence of the device parameters. We also describe a parameter extraction routine which allows the model parameters to be derived in a straightforward fashion from experimental data. The model has been incorporated into our new circuit simulator AIM-Spice. The new device characterization is applied with good results to a typical ion-implanted GaAs MESFET and a delta-doped MESFET.

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Wager, J. F., and A. J. McCamant. "GaAs MESFET interface considerations." IEEE Transactions on Electron Devices 34, no. 5 (May 1987): 1001–7. http://dx.doi.org/10.1109/t-ed.1987.23036.

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5

Zheng, Chun-Yi, Wen-Jung Chiang, Yeong-Lin Lai, Edward Y. Chang, Shen-Li Chen, and K. B. Wang. "Characteristics of GaAs Power MESFETs with Double Silicon Ion Implantations for Wireless Communication Applications." Open Materials Science Journal 10, no. 1 (June 15, 2016): 29–36. http://dx.doi.org/10.2174/1874088x01610010029.

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GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated using direct double silicon (Si) ion implantation technology for wireless communication applications. A 150-µm MESFET had a saturation drain current of 238 mA/mm after Si3N4passivation. A 15-mm MESFET, when measured under a class-AB condition with a biased drain voltage of 3.4 V and a quiescent drain current of 600 mA, delivered a maximum output power (Pout) of 31.1 dBm and a maximum power-added efficiency (PAE) of 58.0% at a frequency of 1.88 GHz. The MESFET exhibited aPoutof 29.2 dBm with a PAE of 45.0% at the 1-dB gain compression point. The MESFET, when measured under a deep class-B condition with a biased drain voltage of 4.7 V and a quiescent drain current of 50 mA, achieved a maximumPoutof 33.1 dBm and a maximum PAE of 55.9% at 1.88 GHz. The MESFET operating at 4.7 V and 1.88 GHz exhibited aP1dBof 31.8 dBm and an associated PAE of 47.1% at the 1-dB gain compression point. When tested by IS-95 code-division multiple access (CDMA) standard signals and biased at 4.7 V under the deep class-B condition, the MESFET with aPoutof 28 dBm demonstrated an adjacent channel power rejection (ACPR) of –31.2 dBc at +1.25 MHz apart from the 1.88 GHz center frequency and –45.7 dBc at +2.25 MHz.

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Ramam, A., R. Gulati, and B. L. Sharma. "Variable Pinch-Off GaAs MESFET." physica status solidi (a) 91, no. 2 (October 16, 1985): K169—K172. http://dx.doi.org/10.1002/pssa.2210910264.

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7

Baier, S. M., Gi-Young Lee, H. K. Chung, B. J. Fure, and R. Mactaggart. "Complementary GaAs MESFET logic gates." IEEE Electron Device Letters 8, no. 6 (June 1987): 260–62. http://dx.doi.org/10.1109/edl.1987.26623.

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8

Conger, J., M. S. Shur, and A. Peczalski. "Power law GaAs MESFET model." IEEE Transactions on Electron Devices 39, no. 10 (1992): 2415–17. http://dx.doi.org/10.1109/16.158819.

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9

Daga, O. P., J. K. Singh, B. R. Singh, H. S. Kothari, and W. S. Khokle. "GaAs MESFET and related processes." Bulletin of Materials Science 13, no. 1-2 (March 1990): 99–112. http://dx.doi.org/10.1007/bf02744864.

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Yamasaki, Kimiyoshi. "VI. Millimeter-Wave GaAs MESFET Technology." IEEJ Transactions on Electronics, Information and Systems 116, no. 5 (1996): 509–11. http://dx.doi.org/10.1541/ieejeiss1987.116.5_509.

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Dissertations / Theses on the topic "Mesfet gaas"

1

Ho, Wai. "GaAs MESFET modeling and its applications." Ohio : Ohio University, 1993. http://www.ohiolink.edu/etd/view.cgi?ohiou1175707072.

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2

Abbott, Derek. "GaAs MESFET Photodetectors for imaging arrays /." Title page, contents and abstract only, 1995. http://web4.library.adelaide.edu.au/theses/09PH/09pha1312.pdf.

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Weissfloch, Phillip. "Iron-GaAs schottky contact for mesfet applications." Thesis, McGill University, 1988. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=61798.

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Elgaid, Khaled Ibrahim. "A Ka-Band GaAs MESFET monolithic downconverter." Thesis, University of Glasgow, 1998. http://theses.gla.ac.uk/1730/.

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The objective of the work of this thesis is to design, fabricate, and characterise a GaAs MESFET based monolithic microwave integrated circuit (MMIC) downconverter which operates at Ka-band frequency (35GHz). In the course of the project active and passive elements required for the MMIC were designed, fabricated, characterised and their equivalent circuit models extracted. Fabrication processes for passives, actives and MMIC were realised using mainly electron beam lithography (EBL) techniques. The main findings of this thesis were: Devices - Influence of gate recess offset on MESFETs The MESFETs were patterned by EBL and gate recessing was accomplished by selective dry etching. The influence of the gate recess offset on the small signal AC equivalent circuit, DC device characteristics, overall high frequency device performance, and low frequency noise behaviour of 0.2 m gate length GaAs MESFETs implemented in the low noise amplifier (LNA) circuit design in this thesis was investigated. Numerical simulations of the AC small signal equivalent circuit dependence were carried out in order to help understand the effects observed. Good qualitative agreement between measured and simulated response was obtained. - Schottky diodes The performance of Schottky-contact diodes used in the MMIC mixer were studied as a function of their geometry and processing conditions. Passives - CPW losses Losses in coplanar interconnect topologies (coplanar waveguide and slotline) using different metallisation processes were investigated. - CPW to slotline transitions A range of coplanar waveguide to slotline transitions required for the MMIC mixer were studied. Broadband performance with insertion loss of < 0.5dB per transition was observed. Transmission line models of the structures have been implemented to enable circuit performance to be predicted and designed to suit the application frequency. The effect of parasitic modes on transitions performance was also investigated.

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Franklin, Andrew John. "Electrical overstress failure in GaAs MESFET structures." Thesis, Loughborough University, 1990. https://dspace.lboro.ac.uk/2134/11006.

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An experimental and theoretical analysis has been carried out into the effects of electrostatic discharge and constant power electrical overstress in GaAs MES structures. An experimental system has been set up to measure the electrical and physical characteristics of such devices when subject to electrical overstress. This system includes computer controlled equipment to analyse the electrical failure waveforms. The results from the experimental study have been analysed to establish any patterns which characterise ESD breakdown. Using a new thermal breakdown model, analytical predictions of the power required to degrade these devices, for both constant power, and electrostatic discharge breakdown, have been carried out.

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Radice, Richard A. "Single-event analysis of LT GaAs MESFET integrated circuits." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 1997. http://handle.dtic.mil/100.2/ADA336778.

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Choo, Boy Lee. "Microwave GaAs MESFET circuit design using time-domain simulation." Thesis, Queen's University Belfast, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.356890.

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Davies, Antony. "Characterisation and parameter extraction techniques for GaAs MESFET devices." Thesis, University of Kent, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.241552.

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9

Chun, Carl S. P. (Shun Ping). "Investigation of GaAs MESFET amplifier topologies for optoelectronic receiver applications." Thesis, Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/14813.

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10

Chueiri, Ivan Jorge. "Uma contribuição ao projeto de CI's com MESFET em GaAs." [s.n.], 1993. http://repositorio.unicamp.br/jspui/handle/REPOSIP/261441.

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Orientador : Jacobus Wilibrordus Swart
Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica
Made available in DSpace on 2018-07-18T10:05:20Z (GMT). No. of bitstreams: 1 Chueiri_IvanJorge_M.pdf: 14720870 bytes, checksum: 618b71ab7ca41e4aae5585876627dec7 (MD5) Previous issue date: 1993
Resumo: Este trabalho visa criar um elo entre processos e projetos de Circuitos Integrados e Dispositivos no Laboratório de Pesquisa e Dispositivos. Na área referente a processos, o Laboratório de Pesquisa e Dispositivos vem desenvolvendo a técnica de "Difusão de Enxofre em Arseneto de Gálio por Processamento Térmico Rápido" e obtendo dispositivos básicos. Dessa forma a partir deste trabalho foram extraidos os parâmetros Spice dos dispositivos em Arseneto de Gálio que vem sendo processados tanto desenvolvemos no Laboratório 39 do LPD. Para um programa de extração (Statz de parâmetros para o modelo de Raytheon et aI.) , utilizado em SPICE3D2 (UCBerkeley). Obtivemos ajustes das curvas caracteristicas experimentais e de modelo com erro menor que 4%. Juntamente com estes parâmetros foram escritos arquivos de tecnologia, que são regras de projetos para o desenho de novos circuitos. Foi desenvolvido um "chipteste" contendo dispositivos e circuitos, com finalidade de se extrair parâmetros e testar a performance de cada um dos circuitos
Abstract: The intent of the thesis. "A Contribution to Integrated Circuit Projects With GaAs MESFET", is to obtain a relationship between the Research on Devices laboratory (lPD) GaAs process and the integrated circuits develop using this process. The LPD develops integrated circuits using the "Rapid Thermal Diffusion of Sulphur in GaAs". The SPICE parameters of the GaAs devices (depletion transistors), made using this process, was extracted. A computer program was developed, that takes as input the carachteristics' curves of a device and gives as output the SPICE parameters according to the Raytheon Model (Statz et aI.). This model is used in the SPICE3-D2 (and upgraded version) developed by UC-Berkeley. We have obtained the experimental characteristics' curves fit with that of the medel with an errer les5 than 4%. We have, also written the technology file/design rules for MAGIC-6.3, for the LPD diffusion process. Using MAGIC we have developed a test chip ("chipteste") with devices and circuits. These devices will be used to extract parameters that will contribute to the fine tuning of the model and the LPD process
Mestrado
Mestre em Engenharia Elétrica

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Books on the topic "Mesfet gaas"

1

Radice, Richard A. Single-event analysis of LT GaAs MESFET integrated circuits. Monterey, Calif: Naval Postgraduate School, 1997.

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2

Zhang, Weihong. GaAS MESFET large-signal model for switching power amplifiers. Ottawa: National Library of Canada, 1994.

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3

Simons, Rainee. Optically controlled GaAs dual-gate MESFET and permeable base transistors. [Washington, DC]: National Aeronautics and Space Administration, 1986.

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Simons, Rainee. Optoelectric gain control of a microwave single stage GaAs MESFET amplifier. [Washington, D.C.]: National Aeronautics and Space Administration, 1988.

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Adojutelegan, Adewole O. Cointegration of GaAs/AIGaAs HBTs and GaAs MESFETs on MBE grown layers. Manchester: UMIST, 1997.

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Prapas, S. A hybrid microwave distributed amplifier using GaAs MESFETs. Manchester: UMIST, 1997.

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Husby, Haldor T. Modelling of the gate capacitance in GaAs MESFETs. Ottawa: National Library of Canada, 1996.

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8

u-mediniyut, Israel Miśrad ha-energyah ṿeha-tashtit Agaf tikhnun. ha-Proyeḳṭ le-ḳidum ha-beṭiḥut shel mesheḳ ha-gaz be-Yiśraʼel: Duaḥ mesakem, shalav 2. Yerushalayim: ha-Agaf, 1990.

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u-mediniyut, Israel Miśrad ha-energyah ṿeha-tashtit Agaf tikhnun. ha-Proyeḳṭ le-ḳidum ha-beṭiḥut shel mesheḳ ha-gaz be-Yiśraʼel: Duaḥ mesakem li-shenat ha-ʻavodah 90/91. Yerushalayim: ha-Agaf, 1991.

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GaAs MESFET circuit design. Boston: Artech House, 1988.

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Book chapters on the topic "Mesfet gaas"

1

Kellner, Walter, and Hermann Kniepkamp. "GaAs-MESFET." In GaAs-Feldeffekttransistoren, 107–76. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83576-6_4.

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Kellner, Walter, and Hermann Kniepkamp. "GaAs-MESFET." In GaAs-Feldeffekttransistoren, 107–74. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-662-07363-6_4.

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Kellner, Walter, and Hermann Kniepkamp. "Stabilität und Zuverlässigkeit von GaAs-MESFET." In GaAs-Feldeffekttransistoren, 196–213. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83576-6_6.

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Kellner, Walter, and Hermann Kniepkamp. "Stabilität und Zuverlässigkeit von GaAs-MESFET." In GaAs-Feldeffekttransistoren, 194–211. Berlin, Heidelberg: Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-662-07363-6_6.

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Taylor, Stewart S. "Design Considerations for GaAs MESFET RF Power Amplifiers." In Analog Circuit Design, 395–413. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4757-2983-2_18.

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6

Morgan, D. V., and J. Wood. "Gate Metallisation Systems for High Reliability GaAs MESFET Transistors." In Semiconductor Device Reliability, 177–96. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-2482-6_11.

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Turner, James, and Rodney Conlon. "An Historical Perspective of GaAs Mesfet Reliability Work at Plessey." In Semiconductor Device Reliability, 29–42. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-2482-6_2.

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Pain, Puspak, Dipayan Purakait, Nilanjan Chatterjee, and Maitreyi Ray Kanjilal. "Electrical Characteristics of MESFET Using GaAs, InP and GaN as Substrates." In Computational Advancement in Communication Circuits and Systems, 415–23. New Delhi: Springer India, 2015. http://dx.doi.org/10.1007/978-81-322-2274-3_46.

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Campbell, David S., and Vincent M. Dwyer. "Electrostatic and Electrical Overstress Damage in Silicon Mosfet Devices and Gaas Mesfet Structures." In Electronics Packaging Forum, 297–333. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-009-0439-2_10.

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10

Marco, Walter, Wilhelmus Noije, and Jacobus W. Swart. "A 3.3 Gb/s Sample Circuit with GaAs MESFET Technology and SCFL Gates." In VLSI: Integrated Systems on Silicon, 201–12. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-0-387-35311-1_17.

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Conference papers on the topic "Mesfet gaas"

1

Barov, A. A., and M. G. Ignatjev. "MMIC GaAs MESFET switch." In 2004 14th International Crimean Conference "Microwave and Telecommunication Technology". IEEE, 2004. http://dx.doi.org/10.1109/crmico.2004.183134.

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ROGERS, D. L., and A. CHAU. "GaAs MESFET compatible photodetectors." In Optical Fiber Communication Conference. Washington, D.C.: OSA, 1986. http://dx.doi.org/10.1364/ofc.1986.tul17.

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Szreter, Miroslaw, Boguslaw Boratynski, Bogdan Paszkiewicz, and Iwona Zborowska-Lindert. "X-band GaAs MESFET." In International Conference on Microelectronics, edited by Andrzej Sowinski, Jan Grzybowski, Witold T. Kucharski, and Ryszard S. Romaniuk. SPIE, 1992. http://dx.doi.org/10.1117/12.131010.

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El-Ghazaly, Samir, and Tatsuo Itoh. "Inverted-Gate GaAs Mesfet Characteristics." In 17th European Microwave Conference, 1987. IEEE, 1987. http://dx.doi.org/10.1109/euma.1987.333703.

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Barov, A. A., V. J. Gunter, M. G. Ignatjev, and T. S. Petrova. "Control MMIC of GaAs MESFET." In 2005 15th International Crimean Conference Microwave and Telecommunication Technology. IEEE, 2005. http://dx.doi.org/10.1109/crmico.2005.1564858.

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Shestakov, A., A. Myasnikov, and K. Zhuravlev. "Modeling of powerful GaAs MESFET." In SPIE Proceedings, edited by Kamil A. Valiev and Alexander A. Orlikovsky. SPIE, 2008. http://dx.doi.org/10.1117/12.802535.

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Vashchenko, V. A., N. A. Kozlov, V. F. Sinkevitch, J. B. Martynov, and A. S. Tager. "Simulation of the GaAs mesfet burnout." In 1995 25th European Microwave Conference. IEEE, 1995. http://dx.doi.org/10.1109/euma.1995.336951.

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Canfield, P., and D. Allstot. "A p-well GaAs MESFET technology." In 1990 37th IEEE International Conference on Solid-State Circuits. IEEE, 1990. http://dx.doi.org/10.1109/isscc.1990.110215.

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Ragle, D., K. Decker, and M. Loy. "ESD effects on GaAs MESFET lifetime." In Proceedings of IEEE International Reliability Physics Symposium. IEEE, 1993. http://dx.doi.org/10.1109/relphy.1993.283276.

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Dumas, J. M., D. Lecrosnier, and J. F. Bresse. "Investigation Into GaAs Power MESFET Surface Degradation." In 23rd International Reliability Physics Symposium. IEEE, 1985. http://dx.doi.org/10.1109/irps.1985.362072.

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Reports on the topic "Mesfet gaas"

1

Maas, Stephen A. A GaAs MESFET Mixer with Very Low Intermodulation,. Fort Belvoir, VA: Defense Technical Information Center, September 1986. http://dx.doi.org/10.21236/ada179993.

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Maas, Stephen A. A GaAs MESFET Balanced Mixer with Very Low Intermodulation,. Fort Belvoir, VA: Defense Technical Information Center, August 1987. http://dx.doi.org/10.21236/ada184848.

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Hwang, Vincent D., and Tatsuo Itoh. Large Signal Modeling and Analysis of the GaAs MESFET. Fort Belvoir, VA: Defense Technical Information Center, July 1986. http://dx.doi.org/10.21236/ada170304.

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