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Journal articles on the topic 'Mesfet gaas'

Author: Grafiati

Published: 4 June 2021

Last updated: 11 February 2022

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1

Franklin, A. J., E. A. Amerasekera, and D. S. Campbell. "A Comparison Between GaAs Mesfet and Si NMOS ESD Behaviour." Active and Passive Electronic Components 12, no. 3 (1987): 201–11. http://dx.doi.org/10.1155/1987/96107.

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Work is in hand at Loughborough University to investigate and compare the ESD sensitivity of GaAs D-MESFETs and unprotected enhancement mode NMOS structures.The work to date has shown that GaAs MESFET structures can be severely degraded with ESD pulses above 600V as compared with 200V for Si NMOS. It has also been shown that both GaAs and NMOS structures are polarity sensitive.The behaviour of the Schottky barrier is used to explain the polarity behaviour in GaAs MESFETs. The breakdown of the oxide in the NMOS devices can be explained by impact ionisation.

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2

OTSUJI, TAIICHI, KOICHI MURATA, KOICHI NARAHARA, KIMIKAZU SANO, EIICHI SANO, and KIMIYOSHI YAMASAKI. "20-40-Gbit/s-CLASS GaAs MESFET DIGITAL ICs FOR FUTURE OPTICAL FIBER COMMUNICATIONS SYSTEMS." International Journal of High Speed Electronics and Systems 09, no. 02 (June 1998): 399–435. http://dx.doi.org/10.1142/s0129156498000191.

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This paper describes recent advances in high-speed digital IC design technologies based on GaAs MESFETs for future high-speed optical communications systems. We devised new types of a data selector and flip-flops, which are key elements in performing high-speed digital functions (signal multiplexing, decision, demultiplexing, and frequency conversion) in front-end transmitter/receiver systems. Incorporating these circuit design technologies with state-of-the-art 0.12 μm gate-length GaAs MESFET process, we developed a DC-to-44-Gbit/s 2:1 data multiplexer IC, a DC-to 22-Gbit/s static decision IC, and a 20-to-40-Gbit/s dynamic decision IC. The fabricated ICs demonstrated record speed performances for GaAs MESFETs. Although further operating speed margin is still required, the GaAs MESFET is a potential candidate for 20- to 40-Gbit/s class applications.

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3

SHUR, M. S., T. A. FJELDLY, T. YTTERDAL, and K. LEE. "UNIFIED GaAs MESFET MODEL FOR CIRCUIT SIMULATIONS." International Journal of High Speed Electronics and Systems 03, no. 02 (June 1992): 201–33. http://dx.doi.org/10.1142/s0129156492000084.

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We describe a new, unified model for MEtal Semiconductor Field Effect Transistors (MESFETs) which covers all ranges of operation, including the subthreshold regime. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics are described by continuous, analytical expressions with relatively few, physically based parameters. The model includes effects such as velocity saturation, parasitic series resistances, the dependence of the threshold voltage on drain bias, finite output conductance in saturation, and temperature dependence of the device parameters. We also describe a parameter extraction routine which allows the model parameters to be derived in a straightforward fashion from experimental data. The model has been incorporated into our new circuit simulator AIM-Spice. The new device characterization is applied with good results to a typical ion-implanted GaAs MESFET and a delta-doped MESFET.

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4

Wager, J. F., and A. J. McCamant. "GaAs MESFET interface considerations." IEEE Transactions on Electron Devices 34, no. 5 (May 1987): 1001–7. http://dx.doi.org/10.1109/t-ed.1987.23036.

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5

Zheng, Chun-Yi, Wen-Jung Chiang, Yeong-Lin Lai, Edward Y. Chang, Shen-Li Chen, and K. B. Wang. "Characteristics of GaAs Power MESFETs with Double Silicon Ion Implantations for Wireless Communication Applications." Open Materials Science Journal 10, no. 1 (June 15, 2016): 29–36. http://dx.doi.org/10.2174/1874088x01610010029.

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GaAs power metal-semiconductor field-effect transistors (MESFETs) were fabricated using direct double silicon (Si) ion implantation technology for wireless communication applications. A 150-µm MESFET had a saturation drain current of 238 mA/mm after Si3N4passivation. A 15-mm MESFET, when measured under a class-AB condition with a biased drain voltage of 3.4 V and a quiescent drain current of 600 mA, delivered a maximum output power (Pout) of 31.1 dBm and a maximum power-added efficiency (PAE) of 58.0% at a frequency of 1.88 GHz. The MESFET exhibited aPoutof 29.2 dBm with a PAE of 45.0% at the 1-dB gain compression point. The MESFET, when measured under a deep class-B condition with a biased drain voltage of 4.7 V and a quiescent drain current of 50 mA, achieved a maximumPoutof 33.1 dBm and a maximum PAE of 55.9% at 1.88 GHz. The MESFET operating at 4.7 V and 1.88 GHz exhibited aP1dBof 31.8 dBm and an associated PAE of 47.1% at the 1-dB gain compression point. When tested by IS-95 code-division multiple access (CDMA) standard signals and biased at 4.7 V under the deep class-B condition, the MESFET with aPoutof 28 dBm demonstrated an adjacent channel power rejection (ACPR) of –31.2 dBc at +1.25 MHz apart from the 1.88 GHz center frequency and –45.7 dBc at +2.25 MHz.

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6

Ramam, A., R. Gulati, and B. L. Sharma. "Variable Pinch-Off GaAs MESFET." physica status solidi (a) 91, no. 2 (October 16, 1985): K169—K172. http://dx.doi.org/10.1002/pssa.2210910264.

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7

Baier, S. M., Gi-Young Lee, H. K. Chung, B. J. Fure, and R. Mactaggart. "Complementary GaAs MESFET logic gates." IEEE Electron Device Letters 8, no. 6 (June 1987): 260–62. http://dx.doi.org/10.1109/edl.1987.26623.

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8

Conger, J., M. S. Shur, and A. Peczalski. "Power law GaAs MESFET model." IEEE Transactions on Electron Devices 39, no. 10 (1992): 2415–17. http://dx.doi.org/10.1109/16.158819.

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9

Daga, O. P., J. K. Singh, B. R. Singh, H. S. Kothari, and W. S. Khokle. "GaAs MESFET and related processes." Bulletin of Materials Science 13, no. 1-2 (March 1990): 99–112. http://dx.doi.org/10.1007/bf02744864.

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10

Yamasaki, Kimiyoshi. "VI. Millimeter-Wave GaAs MESFET Technology." IEEJ Transactions on Electronics, Information and Systems 116, no. 5 (1996): 509–11. http://dx.doi.org/10.1541/ieejeiss1987.116.5_509.

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11

Djouder, Mohamed, Arezki Benfdila, and Ahcene Lakhlef. "Temperature dependent analytical model for submicron GaAs-MESFET." Bulletin of Electrical Engineering and Informatics 10, no. 3 (June 1, 2021): 1271–82. http://dx.doi.org/10.11591/eei.v10i3.2944.

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MESFET are used in circuitsof gigahertz frequencies as they are based on gallium arsenide (GaAs) having electron mobility six times higher than that of silicon. An analytical model simulating different device current-voltage characteristics, i.e., output conductance and output transconductance of a 0.3μm gate MESFET with temperature dependence is proposed. The model is validated by comparing the results of the proposed model and those of the numerical simulation. The parameter values are computed using an intrinsic MESFET of two-dimensional geometry. In this work, the distribution of different output loads for varied applied voltages is considered. Simulation results obtainedunder temperature variation effectsfor load distribution and applied driven voltage variation are considered. The RMS and average errors between the different models and GaAs MESFET simulations are calculated to evidence the proposed model accuracy. This was demonstrated by a good agreement between the proposed model and the simulation results, which are found in good agreement. The simulation results obtained under temperature variations were discussed and found to complement those obtained in the literature. This clarifies the relevance of the suggested model analytical.

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12

Curtice, W. R. "GaAs MESFET modeling and nonlinear CAD." IEEE Transactions on Microwave Theory and Techniques 36, no. 2 (1988): 220–30. http://dx.doi.org/10.1109/22.3509.

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13

Kenzai, C., M. Zaabat, Y. Saidi, and A. Khiter. "Modélisation des Caractéristiques du GaAs MESFET." Acta Physica Polonica A 98, no. 6 (December 2000): 747–62. http://dx.doi.org/10.12693/aphyspola.98.747.

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14

Tang, Wade C., Kerry S. Lowe, I. Abdel‐Motaleb, and Lawrence Young. "Backgating in Ion‐Implanted GaAs MESFET." Journal of The Electrochemical Society 132, no. 11 (November 1, 1985): 2794–95. http://dx.doi.org/10.1149/1.2113666.

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15

GEORGE, PETER, PING-K. KO, and CHENMING HU. "GaAs MESFET model for circuit simulation." International Journal of Electronics 66, no. 3 (March 1989): 379–97. http://dx.doi.org/10.1080/00207218908925396.

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16

Shih, C. C., B. J. Sheu, and H. M. Le. "Characterization of GaAs MESFET gate capacitances." IEEE Journal of Solid-State Circuits 23, no. 3 (June 1988): 878–80. http://dx.doi.org/10.1109/4.335.

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17

Pasternak, J. H., and C. A. T. Salama. "GaAs MESFET differential pass-transistor logic." IEEE Journal of Solid-State Circuits 26, no. 9 (1991): 1309–16. http://dx.doi.org/10.1109/4.84949.

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18

Shiralagi, K., R. Tsui, and H. Goronkin. "GaAs MESFET fabrication without using photoresist." IEEE Electron Device Letters 19, no. 2 (February 1998): 57–59. http://dx.doi.org/10.1109/55.658604.

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19

Madjar, Asher, Peter R. Herczfeld, and Arthur Paollela. "Photoavalanche effects in a GaAs MESFET." Microwave and Optical Technology Letters 3, no. 2 (February 1990): 60–62. http://dx.doi.org/10.1002/mop.4650030206.

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20

Umeda, Tokuo, and Yoshio Cho. "High-speed photodetectors using GaAs MESFET." Electronics and Communications in Japan (Part II: Electronics) 69, no. 1 (1986): 83–90. http://dx.doi.org/10.1002/ecjb.4420690110.

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21

Papaioannou, G. J., J. A. Kaliakatsos, P. C. Euthymiou, and J. R. Forrest. "Photovoltaic effects of GaAs MESFET layers." IEE Proceedings I Solid State and Electron Devices 132, no. 3 (1985): 167. http://dx.doi.org/10.1049/ip-i-1.1985.0034.

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22

Kreischer, L. "Noise tuning of GaAs-MESFET oscillators." Electronics Letters 26, no. 5 (1990): 315. http://dx.doi.org/10.1049/el:19900207.

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23

Pasternak, J. H., and C. A. T. Salama. "GaAs MESFET differential pass-transistor logic." Electronics Letters 26, no. 19 (1990): 1597. http://dx.doi.org/10.1049/el:19901023.

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24

Goronkin, H., and V. Nair. "Comparison of GaAs MESFET noise figures." IEEE Electron Device Letters 6, no. 1 (January 1985): 47–49. http://dx.doi.org/10.1109/edl.1985.26037.

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25

Adibi, A., and K. Eshraghian. "Generalised model for GaAs MESFET photodetectors." IEE Proceedings G Circuits, Devices and Systems 136, no. 6 (1989): 337. http://dx.doi.org/10.1049/ip-g-2.1989.0056.

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26

Utsumi, K., A. Tezuka, K. Nishii, K. Bando, K. Inoue, and T. Onuma. "Gigabit optical transmitter GaAs MESFET IC." Electronics Letters 23, no. 8 (1987): 374. http://dx.doi.org/10.1049/el:19870274.

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27

Lalinský, T., Š. Haščík, Ž. Mozolová, L. Grno, J. Kuzmík, and M. Porges. "Monolithic GaAs MESFET power sensor microsystem." Electronics Letters 31, no. 22 (October 26, 1995): 1914–15. http://dx.doi.org/10.1049/el:19951295.

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28

Xiao, Shuo, C. Andre, and T. Salama. "High-gain gaas mesfet op amp." Analog Integrated Circuits and Signal Processing 5, no. 2 (March 1994): 169–73. http://dx.doi.org/10.1007/bf01272650.

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29

Novosyadliy, S. P., V. M. Lukovkin, R. Melnyk, and A. V. Pavlyshyn. "Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI." Physics and Chemistry of Solid State 21, no. 2 (June 15, 2020): 361–64. http://dx.doi.org/10.15330/pcss.21.2.361-364.

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In this paper described researched essentials and physical mechanisms of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer. Conducted computer modeling of MESFET with p-channel: distributions of potential, volumetric charge, current in channel and its characteristics. Based on conducted modeling discovered new effect in MESFET, shielding of volumetric charge, which sufficiently influences on current distribution in channel.

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30

Novosjadly, S. P., A. I. Terletsky, and O. B. Fryk. "Formation CMOS Schemes on GaAs with Self-Aligned Nitride and Silicide Gates." Фізика і хімія твердого тіла 16, no. 2 (June 15, 2015): 420–24. http://dx.doi.org/10.15330/pcss.16.2.420-424.

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Advanced integrated logic circuits on GaAs are mainly based on the using of n-channel field-effect transistors with gate Schottky (MESFET). To create the complementary MESFET integrated circuits the main problem is quite small Schottky barrier height (< 0,5 eV) on p-type gallium arsenide. One way to solve this problem is to use a nitride or silicide tungsten compounds to form gates given the thickness and composition. This paper highlights the features of the formation of complementary high-speed logic circuits on the p-GaAs with self-aligned gate based on nitride or silicide of tungsten obtained by reduced pressure horizontal reactor "Izotron 4" and of RF magnetron sputtering equipment "Oratorio-5." This technology can also be used to form a Schottky contact to n- channel MESFET. Since the manufacturing process of MESFET self-aligned gate provides using refractory gate material as a mask for the multiply ion implantation, the Schottky contact must withstand subsequent high-temperature heat treatment required to activate implanted impurities. In this connection, the action of high-temperature photonic and resistive heating on the barrier height of Schottky contact formed by nitride (silicide) tungsten (WNx, WSix) GaAs was also studied.

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31

Lau, W. M., Ji Lijiu, K. Lowe, W. Tang, and L. Young. "Hysteresis in GaAs metal-semiconductor field-effect transistors I–V characteristics." Canadian Journal of Physics 63, no. 6 (June 1, 1985): 748–52. http://dx.doi.org/10.1139/p85-119.

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The hysteresis loops observed in the drain current vs. voltage characteristics of metal-semiconductor field-effect transistors (MESFET's) fabricated on semi-insulating GaAs by ion implantation were investigated as a function of the sweep frequency and of the temperature. A model was developed to correlate the extent of the looping to the characteristics of the deep-level traps in the channel. Experimental results were compared with the channel deep-level transient spectroscopic results on the same MESFET.

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32

Songyan, Chen, Liu Baolin, Wang Benzhong, Huang Meichun, Chen Longhai, and Chen Chao. "GaAsInP heteroepitaxy and GaAsInP MESFET fabrication by MOVPE." Journal of Crystal Growth 170, no. 1-4 (January 1997): 433–37. http://dx.doi.org/10.1016/s0022-0248(96)00626-4.

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33

Gromov, Dmitry, and Vadim Elesin. "Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation." ITM Web of Conferences 30 (2019): 10005. http://dx.doi.org/10.1051/itmconf/20193010005.

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The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling diodes implemented in GaAs technology processes. It has been demonstrated that GaAs MESFET, pHEMT and RTDs may show the long-term parameter recovery undo pulsed ionizing exposure.

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34

De Geronimo, G., and A. Castoldi. "A low-power GaAs MESFET charge preamplifier." Nuclear Physics B - Proceedings Supplements 54, no. 3 (March 1997): 113–18. http://dx.doi.org/10.1016/s0920-5632(97)00100-x.

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35

McCamant, A. J., G. D. McCormack, and D. H. Smith. "An improved GaAs MESFET model for SPICE." IEEE Transactions on Microwave Theory and Techniques 38, no. 6 (June 1990): 822–24. http://dx.doi.org/10.1109/22.130988.

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36

Choi, J. R., and D. Polla. "Integration of microsensors in GaAs MESFET process." Journal of Micromechanics and Microengineering 3, no. 2 (June 1, 1993): 60–64. http://dx.doi.org/10.1088/0960-1317/3/2/005.

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37

Scheinberg, N., R. Bayruns, and R. Goyal. "A low-frequency GaAs MESFET circuit model." IEEE Journal of Solid-State Circuits 23, no. 2 (April 1988): 605–8. http://dx.doi.org/10.1109/4.1029.

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38

Conger, J., A. Peczalski, and M. S. Shur. "Modeling frequency dependence of GaAs MESFET characteristics." IEEE Journal of Solid-State Circuits 29, no. 1 (1994): 71–76. http://dx.doi.org/10.1109/4.272098.

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39

Larson, L. E., C. S. Chou, and M. J. Delaney. "An ultrahigh-speed GaAs MESFET operational amplifier." IEEE Journal of Solid-State Circuits 24, no. 6 (1989): 1523–28. http://dx.doi.org/10.1109/4.44988.

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40

Claspy, P. C., M. Richard, K. B. Bhasin, M. Bendett, G. Gustafson, and W. Walters. "A high-speed GaAs MESFET optical controller." IEEE Photonics Technology Letters 1, no. 11 (November 1989): 389–91. http://dx.doi.org/10.1109/68.43389.

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41

Benbouza, M. S. "Active inductances controlled in GaAs MESFET technology." Semiconductor physics, quantum electronics and optoelectronics 9, no. 3 (October 31, 2006): 44–48. http://dx.doi.org/10.15407/spqeo9.03.044.

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42

Rollman, J. A., and P. F. Wahid. "Ka-band monolithic GaAs mesfet amplifier design." Microwave and Optical Technology Letters 3, no. 8 (August 1990): 273–76. http://dx.doi.org/10.1002/mop.4650030802.

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43

Riesz, Ferenc, B. Szentpáli, P. Gottwald, and M. Németh-Sallay. "A novel mesfet-compatible gaas optoelectronic switch." Microwave and Optical Technology Letters 5, no. 3 (March 1992): 112–14. http://dx.doi.org/10.1002/mop.4650050305.

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44

Gulati, R., S. B. Kaushik, P. L. Trivedi, H. S. Sharma, I. Chandra, and B. L. Sharma. "Optical effect in normally-off GaAs MESFET." physica status solidi (a) 88, no. 1 (March 16, 1985): K99—K103. http://dx.doi.org/10.1002/pssa.2210880169.

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45

Bland, S. W., D. Wood, and J. Mun. "Self-alignment techniques for GaAs MESFET i.c.s." Journal of the Institution of Electronic and Radio Engineers 57, no. 1S (1987): S84. http://dx.doi.org/10.1049/jiere.1987.0002.

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46

Kanamori, M., H. Ono, T. Furutsuka, and J. Matsui. "External stress effect on GaAs MESFET Characteristics." IEEE Electron Device Letters 8, no. 5 (May 1987): 228–30. http://dx.doi.org/10.1109/edl.1987.26612.

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47

Jeong, Jichai, G. P. Vella-coleiro, and C. M. L. Yee. "GaAs MESFET amplifiers fabricated on InP substrates." Electronics Letters 26, no. 2 (1990): 135. http://dx.doi.org/10.1049/el:19900092.

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48

Chan, W. K., D. M. Shah, T. J. Gmitter, and C. Caneau. "Inverted gate GaAs MESFET by epitaxial liftoff." Electronics Letters 28, no. 8 (1992): 708. http://dx.doi.org/10.1049/el:19920448.

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49

Ishida, T., T. Nonaka, C. Yamagishi, Y. Kawarada, Y. Sano, M. Akiyama, and K. Kaminishi. "GaAs MESFET ring oscillator on Si substrate." IEEE Transactions on Electron Devices 32, no. 6 (June 1985): 1037–41. http://dx.doi.org/10.1109/t-ed.1985.22070.

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50

Ojala, P. K., and K. K. Kaski. "Analytically extracted ZTC point for GaAs MESFET." IEE Proceedings G Circuits, Devices and Systems 140, no. 6 (1993): 424. http://dx.doi.org/10.1049/ip-g-2.1993.0068.

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